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Готові списки джерел за темами / Optoelectronic devices / Статті в журналах

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Статті в журналах з теми "Optoelectronic devices"

Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 25 липня 2025

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1

Miroshnichenko, Anna S., Vladimir Neplokh, Ivan S. Mukhin, and Regina M. Islamova. "Silicone Materials for Flexible Optoelectronic Devices." Materials 15, no. 24 (2022): 8731. http://dx.doi.org/10.3390/ma15248731.

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Polysiloxanes and materials based on them (silicone materials) are of great interest in optoelectronics due to their high flexibility, good film-forming ability, and optical transparency. According to the literature, polysiloxanes are suggested to be very promising in the field of optoelectronics and could be employed in the composition of liquid crystal devices, computer memory drives organic light emitting diodes (OLED), and organic photovoltaic devices, including dye synthesized solar cells (DSSC). Polysiloxanes are also a promising material for novel optoectronic devices, such as LEDs base

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2

Kausar, Ayesha, Ishaq Ahmad, Malik Maaza, M. H. Eisa, and Patrizia Bocchetta. "Polymer/Fullerene Nanocomposite for Optoelectronics—Moving toward Green Technology." Journal of Composites Science 6, no. 12 (2022): 393. http://dx.doi.org/10.3390/jcs6120393.

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Optoelectronic devices have been developed using the polymer/fullerene nanocomposite, as focused in this review. The polymer/fullerene nanocomposite shows significant structural, electronics, optical, and useful physical properties in optoelectronics. Non-conducting and conducting polymeric nanocomposites have been applied in optoelectronics, such as light-emitting diodes, solar cells, and sensors. Inclusion of fullerene has further broadened the methodological application of the polymer/fullerene nanocomposite. The polymeric matrices and fullerene may have covalent or physical interactions fo

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3

Matei, Andrei Teodor, Anita Ioana Visan, and Irina Negut. "Laser-Fabricated Micro/Nanostructures: Mechanisms, Fabrication Techniques, and Applications." Micromachines 16, no. 5 (2025): 573. https://doi.org/10.3390/mi16050573.

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The rapid evolution of optoelectronic devices necessitates innovative fabrication techniques to improve their performance and functionality. This review explores the advancements in laser processing as a versatile method for creating micro- and nanostructured surfaces, tailored to enhance the efficiency of optoelectronic applications. We begin by elucidating the fundamental mechanisms underlying laser interactions with materials, which facilitate the precise engineering of surface topographies. Following this, we systematically review various micro/nanostructures fabricated by laser techniques

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4

Sang, Xianhe, Yongfu Wang, Qinglin Wang, et al. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (2023): 1334. http://dx.doi.org/10.3390/molecules28031334.

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Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectroni

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5

Vazhdaev, Konstantin, Marat Urakseev, Azamat Allaberdin, and Kostantin Subkhankulov. "OPTOELECTRONIC DEVICES BASED ON DIFFRACTION GRATINGS FROM STANDING ELASTIC WAVES." Electrical and data processing facilities and systems 18, no. 3-4 (2022): 151–58. http://dx.doi.org/10.17122/1999-5458-2022-18-3-4-151-158.

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Relevance Currently, optoelectronic devices based on diffraction gratings from standing elastic waves are widely used. This is due to the fact that such devices are small in size, allow realtime measurements and have high accuracy, speed and reliability. A review of foreign patents and scientific and technical literature shows that in Japan, the USA, Germany and other countries, intensive work has been carried out in recent years to create optoelectronic devices as part of information-measuring systems based on the use of diffraction gratings from standing elastic waves. Such work is also carr

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6

Alles, M. A., S. M. Kovalev, and S. V. Sokolov. "Optoelectronic Defuzzification Devices." Физические основы приборостроения 1, no. 3 (2012): 83–91. http://dx.doi.org/10.25210/jfop-1203-083091.

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7

Bhattacharya, Pallab, and Lily Y. Pang. "Semiconductor Optoelectronic Devices." Physics Today 47, no. 12 (1994): 64. http://dx.doi.org/10.1063/1.2808754.

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8

Osten, W. "Advanced Optoelectronic Devices." Optics & Laser Technology 31, no. 8 (1999): 613–14. http://dx.doi.org/10.1016/s0030-3992(00)00008-6.

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9

Jerrard, H. G. "Picosecond optoelectronic devices." Optics & Laser Technology 18, no. 2 (1986): 105. http://dx.doi.org/10.1016/0030-3992(86)90049-6.

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10

Chapman, David. "Optoelectronic semiconductor devices." Microelectronics Journal 25, no. 8 (1994): 769. http://dx.doi.org/10.1016/0026-2692(94)90143-0.

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11

Djuris˘Ić, A. B., and W. K. Chan. "Organic Optoelectronic Devices." HKIE Transactions 11, no. 2 (2004): 44–52. http://dx.doi.org/10.1080/1023697x.2004.10667955.

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12

Lugli, Paolo, Fabio Compagnone, Aldo Di Carlo, and Andrea Reale. "Simulation of Optoelectronic Devices." VLSI Design 13, no. 1-4 (2001): 23–36. http://dx.doi.org/10.1155/2001/19585.

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In the spirit of reviewing various approaches to the modeling and simulation of optoelectronic devices, we discuss two specific examples, related respectively to Semiconductor Optical Amplifiers and to Quantum Cascade Lasers. In the former case, a tight-binding analysis is performed aimed at the optimization of the polarization independence of the device. Further, a rate-equation model is set up to describe the dynamics of gain recovery after optical pumping. A Monte Carlo simulation of a superlattice quantum cascade laser is then presented which provides an insight into the microscopic proces

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13

MILLER, D. A. B. "QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES." International Journal of High Speed Electronics and Systems 01, no. 01 (1990): 19–46. http://dx.doi.org/10.1142/s0129156490000034.

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Quantum well semiconductor structures allow small, fast, efficient optoelectronic devices such as optical modulators and switches. These are capable of logic themselves and have good potential for integration with electronic integrated circuits for parallel high speed interconnections. Devices can be made both in waveguides and two-dimensional parallel arrays. Working arrays of optical logic and memory devices have been demonstrated, to sizes as large as 2 048 elements, all externally accessible in parallel with free-space optics. This article gives an overview of the physics underlying the op

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14

Wu, Jieyun, Qing Li, Wen Wang, and Kaixin Chen. "Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups." Mini-Reviews in Organic Chemistry 16, no. 3 (2019): 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.

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Organic conjugated materials have shown attractive applications due to their good optoelectronic properties, which enable them solution processing techniques in organic optoelectronic devices. Many conjugated materials have been investigated in polymer solar cells and organic field-effect transistors. Among those conjugated materials, Benzo[1,2-b:4,5-b′]dithiophene (BDT) is one of the most employed fused-ring building groups for the synthesis of conjugated materials. The symmetric and planar conjugated structure, tight and regular stacking of BDT can be expected to exhibit the excellent carrie

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15

Berini, Pierre. "Plasmonic optoelectronic devices and metasurfaces." EPJ Web of Conferences 309 (2024): 01003. http://dx.doi.org/10.1051/epjconf/202430901003.

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We report recent progress on optoelectronic devices and metasurfaces involving surface plasmons, enabled by metal-oxide-semiconductor (MOS) structures on Si and on epsilon-near-zero materials. We discuss electrically tuneable metasurfaces, high-speed electro-absorption modulators, and reflection modulators. Hot carriers created by the absorption of plasmons in metallic nanostructures on MOS structures are also discussed as they lead to novel device physics that open the door to new device concepts.

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16

Nowsherwan, Ghazi Aman, Qasim Ali, Umar Farooq Ali, Muhammad Ahmad, Mohsin Khan, and Syed Sajjad Hussain. "Advances in Organic Materials for Next-Generation Optoelectronics: Potential and Challenges." Organics 5, no. 4 (2024): 520–60. http://dx.doi.org/10.3390/org5040028.

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This review provides a comprehensive overview of recent advancements in the synthesis, properties, and applications of organic materials in the optoelectronics sector. The study emphasizes the critical role of organic materials in the development of state-of-the-art optoelectronic devices such as organic solar cells, organic thin-film transistors, and OLEDs. The review further examines the structure, operational principles, and performance metrics of organic optoelectronic devices. Organic materials have emerged as promising candidates due to their low-cost production and potential for large-a

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17

Ma, Qijie, Guanghui Ren, Arnan Mitchell, and Jian Zhen Ou. "Recent advances on hybrid integration of 2D materials on integrated optics platforms." Nanophotonics 9, no. 8 (2020): 2191–214. http://dx.doi.org/10.1515/nanoph-2019-0565.

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AbstractThe burgeoning research into two-dimensional (2D) materials opens a door to novel photonic and optoelectronic devices utilizing their fascinating electronic and photonic properties in thin-layered architectures. The hybrid integration of 2D materials onto integrated optics platforms thus becomes a potential solution to tackle the bottlenecks of traditional optoelectronic devices. In this paper, we present the recent advances of hybrid integration of a wide range of 2D materials on integrated optics platforms for developing high-performance photodetectors, modulators, lasers, and nonlin

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18

Basri, Nur Fadzilah, Afishah Alias, Megat Muhammad Ikhsan Megat Hasnan, Mohammad Syahmi Nordin, Fahrettin Sarcan, and Khairul Anuar Mohamad. "Comparison of Non-Linear Impedance AC Response of 10 and 20 Multiple Quantum Wells (MQWs) p-i-n Diode with DBR Towards Low Leakage Current Generation of Optoelectronic Device." Journal of Advanced Research in Applied Sciences and Engineering Technology 62, no. 3 (2024): 178–88. https://doi.org/10.37934/araset.62.3.178188.

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This study explores the leakage current behaviour in multi-quantum well (MQW) devices using dielectric analysis. MQWs integrated with distributed Bragg reflector (DBR) show promise in enhancing optoelectronic device performance. Impedance spectroscopy and dark current-voltage measurements were conducted on 10 MQWs and 20 MQWs. The results indicate that 20 MQWs exhibit lower dielectric loss and leakage current compared to 10 MQWs. Understanding and minimizing resistive and polarization losses can improve the power efficiency and signal quality of optoelectronic devices. These findings demonstra

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19

Li, Ziwei, Boyi Xu, Delang Liang, and Anlian Pan. "Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials." Research 2020 (August 29, 2020): 1–35. http://dx.doi.org/10.34133/2020/5464258.

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The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D material

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20

Wu, Zhiyong, Lu Zhu, and Zhengji Xu. "Editorial for the Special Issue on Micro/Nano-Structure Based Optoelectronics and Photonics Devices." Micromachines 14, no. 10 (2023): 1867. http://dx.doi.org/10.3390/mi14101867.

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In the ever-evolving fields of optoelectronics and photonics, the introduction of carefully designed micro-/nanostructures enables personalized customization of the electrical and optical properties of optoelectronic and photonic devices [...]

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21

Liu, Zhixiong, and Husam N. Alshareef. "MXenes for Optoelectronic Devices." Advanced Electronic Materials 7, no. 9 (2021): 2100295. http://dx.doi.org/10.1002/aelm.202100295.

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22

Chuang, Shun Lien, Nasser Peyghambarian, and Stephan Koch. "Physics of Optoelectronic Devices." Physics Today 49, no. 7 (1996): 62. http://dx.doi.org/10.1063/1.2807693.

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23

Demming, Anna, Mark Brongersma, and Dai Sik Kim. "Plasmonics in optoelectronic devices." Nanotechnology 23, no. 44 (2012): 440201. http://dx.doi.org/10.1088/0957-4484/23/44/440201.

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24

Cai, Yuanjing, Anjun Qin, and Ben Zhong Tang. "Siloles in optoelectronic devices." Journal of Materials Chemistry C 5, no. 30 (2017): 7375–89. http://dx.doi.org/10.1039/c7tc02511d.

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25

Bouscher, Shlomi, Dmitry Panna, and Alex Hayat. "Semiconductor–superconductor optoelectronic devices." Journal of Optics 19, no. 10 (2017): 103003. http://dx.doi.org/10.1088/2040-8986/aa8888.

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26

Bhattacharya, Pallab, and Zetian Mi. "Quantum-Dot Optoelectronic Devices." Proceedings of the IEEE 95, no. 9 (2007): 1723–40. http://dx.doi.org/10.1109/jproc.2007.900897.

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27

Goldstein, L. "Optoelectronic devices by GSMBE." Journal of Crystal Growth 105, no. 1-4 (1990): 93–96. http://dx.doi.org/10.1016/0022-0248(90)90344-k.

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28

Liang, Zhiqiang, Jun Sun, Yueyue Jiang, Lin Jiang, and Xiaodong Chen. "Plasmonic Enhanced Optoelectronic Devices." Plasmonics 9, no. 4 (2014): 859–66. http://dx.doi.org/10.1007/s11468-014-9682-7.

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29

Star, Alexander, Yu Lu, Keith Bradley, and George Grüner. "Nanotube Optoelectronic Memory Devices." Nano Letters 4, no. 9 (2004): 1587–91. http://dx.doi.org/10.1021/nl049337f.

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30

Henini, M. "Physics of optoelectronic devices." Microelectronics Journal 28, no. 1 (1997): 101–2. http://dx.doi.org/10.1016/s0026-2692(97)87853-6.

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31

Henini, Mohamed. "Optoelectronic materials and devices." Microelectronics Journal 25, no. 8 (1994): 607–8. http://dx.doi.org/10.1016/0026-2692(94)90126-0.

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32

Ho, P. K. "All-Polymer Optoelectronic Devices." Science 285, no. 5425 (1999): 233–36. http://dx.doi.org/10.1126/science.285.5425.233.

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33

Tomas, R. "Physics of optoelectronic devices." Optics and Lasers in Engineering 26, no. 1 (1997): 72. http://dx.doi.org/10.1016/0143-8166(96)81156-0.

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34

Hövel, S., N. C. Gerhardt, M. R. Hofmann, et al. "Spin-controlled optoelectronic devices." physica status solidi (c) 6, no. 2 (2009): 436–39. http://dx.doi.org/10.1002/pssc.200880357.

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35

Shan, Xuanyu, Chenyi Zhao, Ya Lin, et al. "Optoelectronic synaptic device based on ZnO/HfO_x heterojunction for high-performance neuromorphic vision system." Applied Physics Letters 121, no. 26 (2022): 263501. http://dx.doi.org/10.1063/5.0129642.

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Optoelectronic synapses are considered to be important cornerstones in the construction of neuromorphic computing systems because of their low power consumption, high operating speeds, and high scalability. In this work, we demonstrate an optoelectronic synaptic device based on a ZnO/HfOx heterojunction in which optical potentiation/electrical depression behaviors and nonvolatile high current state can be implemented. The heterojunction device exhibits conductance evolution with high linearity. The excellent optoelectronic memristive behavior of the device can be attributed to the interface ba

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36

Zhuo, Linqing, Dongquan Li, Weidong Chen, et al. "High performance multifunction-in-one optoelectronic device by integrating graphene/MoS₂ heterostructures on side-polished fiber." Nanophotonics 11, no. 6 (2022): 1137–47. http://dx.doi.org/10.1515/nanoph-2021-0688.

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Abstract Two-dimensional (2D) materials exhibit fascinating and outstanding optoelectronic properties, laying the foundation for the development of novel optoelectronic devices. However, ultra-weak light absorption of 2D materials limits the performance of the optoelectronic devices. Here, a structure of MoS2/graphene/Au integrated onto the side-polished fiber (SPF) is proposed to achieve a high-performance fiber-integrated multifunction-in-one optoelectronic device. It is found that the device can absorb the transverse magnetic (TM) mode guided in the SPF and generate photocurrents as a polar

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37

Gorham, D. "Amorphous and microcrystalline semiconductor devices: Optoelectronic devices." Microelectronics Journal 24, no. 7 (1993): 733. http://dx.doi.org/10.1016/0026-2692(93)90016-8.

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38

Sakurai, Makoto, Ke Wei Liu, Romain Ceolato, and Masakazu Aono. "Optical Properties of ZnO Nanowires Decorated with Au Nanoparticles." Key Engineering Materials 547 (April 2013): 7–10. http://dx.doi.org/10.4028/www.scientific.net/kem.547.7.

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One of the key technologies in future optoelectronics is control of excitons in oxide materials by the coupling with plasmons on noble metal surfaces. Optical properties of ZnO nanowires decorated with Au nanoparticles were studied to understand fundamental mechanism of the coupling and to develop optoelectronic devices with new functionalities. Light intensity at the main peak position in the photoluminescence (PL) spectra of ZnO nanowires was enhanced with the coverage of Au nanoparticles. Lifetime of excitons excited optically decreased by the decoration of Au nanoparticles. Understanding o

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39

Tang, Hongyu, and Giulia Tagliabue. "Tunable photoconductive devices based on graphene/WSe₂ heterostructures." EPJ Web of Conferences 266 (2022): 09010. http://dx.doi.org/10.1051/epjconf/202226609010.

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Optoelectronic tunability in van der Waals heterostructures is essential for their optoelectronic applications. In this work, tunable photoconductive properties were investigated in the heterostructures of WSe2 and monolayer graphene with different stacking orders on SiO2/Si substrates. Here, we demonstrated the effect of the material thickness of WSe2 and graphene on the interfacial charge transport, light absorption, and photoresponses. The results showed that the WSe2/graphene heterostructure exhibited positive photoconductivity after photoexcitation, while negative photoconductivity was ob

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40

Xu, Jiyuan, Zailan Zhang, Wei Zhang, and Zhesheng Chen. "Recent Progress of Self-Powered Optoelectronic Devices Based on 2D Materials." Processes 12, no. 8 (2024): 1728. http://dx.doi.org/10.3390/pr12081728.

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Анотація:

Harvesting energy through light radiation is an attractive solution for powering wireless devices in the future. In particular, self-driven optoelectronic devices are especially attractive for low-energy devices on the Internet of Things. Two-dimensional (2D) materials at atomic scale thicknesses are very attractive for future self-powered optoelectronic devices due to not only their unique electronic and optical properties, but also the feasibility to fabricate desirable heterostructures, which differ from their bulk counterparts and conventional optoelectronic materials. In this review, we m

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41

ابراهيم السنوسي نصر و احمد ابوسيف عبد الرحمن. "Interactive Learning Material for Optoelectronic Devices using MATLAB-based GUI." Journal of Pure & Applied Sciences 19, no. 2 (2020): 141–47. http://dx.doi.org/10.51984/jopas.v19i2.878.

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Optoelectronic devices have been a difficult subject to grasp for many university students who undertake electronic engineering. Many students find it difficult to understand the operation principle of the optoelectronic devices, for instance, how a solar cell device converts solar energy into electric energy or electricity, or the difference between types of semiconductor devices in terms of interaction between photons and electrons. Thus, the purpose of this paper is to design and implement an interactive and animated software package to aid students in understanding the concepts of the foll

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42

Parkhomenko, Hryhorii P., Erik O. Shalenov, Zarina Umatova, Karlygash N. Dzhumagulova, and Askhat N. Jumabekov. "Fabrication of Flexible Quasi-Interdigitated Back-Contact Perovskite Solar Cells." Energies 15, no. 9 (2022): 3056. http://dx.doi.org/10.3390/en15093056.

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Perovskites are a promising class of semiconductor materials, which are being studied intensively for their applications in emerging new flexible optoelectronic devices. In this paper, device manufacturing and characterization of quasi-interdigitated back-contact perovskite solar cells fabricated on flexible substrates are studied. The photovoltaic parameters of the prepared flexible quasi-interdigitated back-contact perovskite solar cells (FQIBC PSCs) are obtained for the front- and rear-side illumination options. The dependences of the device’s open-circuit potential and short-circuit curren

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43

Kumar, Swarup, Usha Akter, and Sree Biddut Kumar. "Compound Materials in Optoelectronics: A Review of Their Prospects and Applications." European Journal of Theoretical and Applied Sciences 3, no. 2 (2025): 371–82. https://doi.org/10.59324/ejtas.2025.3(2).32.

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Анотація:

Recent advances in mechanics and material design have enabled the development of optoelectronic circuits, systems, and devices that are curved, flexible, stretchable, and biocompatible. This progress allows for the seamless integration of optoelectronic devices with biological systems, supporting applications ranging from high-speed communication to energy conversion. This in-depth review study critically explores the groundbreaking potential and cutting-edge applications of compound materials in revolutionizing optoelectronic devices. The research delves into a range of compound materials, su

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44

Swarup, Kumar, Akter Usha, and Biddut Kumar Sree. "Compound Materials in Optoelectronics: A Review of Their Prospects and Applications." European Journal of Theoretical and Applied Sciences 3, no. 2 (2025): 371–82. https://doi.org/10.59324/ejtas.2025.3(2).32.

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Анотація:

Recent advances in mechanics and material design have enabled the development of optoelectronic circuits, systems, and devices that are curved, flexible, stretchable, and biocompatible. This progress allows for the seamless integration of optoelectronic devices with biological systems, supporting applications ranging from high-speed communication to energy conversion. This in-depth review study critically explores the groundbreaking potential and cutting-edge applications of compound materials in revolutionizing optoelectronic devices. The research delves into a range of compound materials, su

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45

Xu, Shaoheng, Jiajun Luo, Haisheng Song, and Jiang Tang. "Recent advances in monolithic-integrated lead-based optoelectronic devices." Frontiers of Optoelectronics 18, no. 1 (2025). https://doi.org/10.1007/s12200-025-00158-2.

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Анотація:

Abstract Optoelectronic devices, including light sensors and light-emitting diodes, are indispensable for our daily lives. Lead-based optoelectronic materials, including colloidal quantum dots and lead-halide perovskites, have emerged as promising candidates for the next-generation optoelectronic devices. This is primarily attributed to their tailorable optoelectronic properties, industrialization-compatible manufacturing techniques, seamless integration with silicon technology and excellent device performance. In this perspective, we review recent advancements in lead-based optoelectronic dev

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Ouyang, Yi, Chaoyi Zhang, Jun Wang, Zheng Guo, Zegao Wang, and Mingdong Dong. "Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse." Advanced Science, March 12, 2025. https://doi.org/10.1002/advs.202416259.

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AbstractIn the advancing field of optoelectronics, multifunctional devices that integrate both detection and processing capabilities are increasingly desirable. Here, a gate‐tunable dual‐mode optoelectronic device based on a MoTe2/MoS2 van der Waals heterostructure, designed to operate as both a self‐powered photodetector and an optoelectronic synapse, is reported. The device leverages the photovoltaic effect in the MoTe2/MoS2 PN junction for self‐powered photodetection and utilizes trapping states at the SiO2/MoS2 interface to emulate synaptic behavior. Gate voltage modulation enables precise

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Ahmad, Waqas, Ye Wang, Jamal Kazmi, et al. "Janus 2D Transition Metal Dichalcogenides: Research Progress, Optical Mechanism and Future Prospects for Optoelectronic Devices." Laser & Photonics Reviews, November 30, 2024. https://doi.org/10.1002/lpor.202400341.

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AbstractExploring the extraordinary optoelectronic properties of two‐dimensional (2D) materials to construct advanced optoelectronic devices is a major goal for academic researchers and industrialists. Emerging 2D Janus materials are the innovative class of 2D materials in which two sides are either asymmetrical functionalized or exposed to different environments. Distinctive features of Janus 2D materials such as tunable bandgaps, electronic structures, the presence of Rashba effects, excitonic effects, piezoelectric effects etc. make its magnificent candidates for optoelectronic devices. The

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Dong, He, Chenxin Ran, Weiyin Gao, Mingjie Li, Yingdong Xia, and Wei Huang. "Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects." eLight 3, no. 1 (2023). http://dx.doi.org/10.1186/s43593-022-00033-z.

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AbstractMetal halide perovskites (MHPs), emerging as innovative and promising semiconductor materials with prominent optoelectronic properties, has been pioneering a new era of light management (ranging from emission, absorption, modulation, to transmission) for next-generation optoelectronic technology. Notably, the exploration of fundamental characteristics of MHPs and their devices is the main research theme during the past decade, while in the next decade, it will be primarily critical to promote their implantation in the next-generation optoelectronics. In this review, we first retrospect

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Lee, SangMyeong, Hee Jung Kim, Young Ju Kim, et al. "Relative Permittivity and Optoelectronic Performances of Halide Perovskites: Study of Combined First‐Principles Simulation and Combinatorial Synthesis." Advanced Photonics Research, September 4, 2024. http://dx.doi.org/10.1002/adpr.202400039.

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Анотація:

Owing to their excellent optoelectronic properties, halide perovskites (HPs) have garnered significant attention in the field of optoelectronics. However, conventional HPs‐based optoelectronic devices primarily are fabricated using solution‐based processes, implying that extremely time‐consuming needs to individually synthesize their composition‐dependent optoelectronic properties. This study demonstrates the feasibility of combining first‐principles simulations with combinatorial synthesis, comparing the effects of HP properties on optoelectronic devices using this combined approach. The firs

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Liu, Jingjing, Junle Qu, Thomas Kirchartz, and Jun Song. "Optoelectronic devices based on the integration of halide perovskites with silicon-based materials." Journal of Materials Chemistry A, 2021. http://dx.doi.org/10.1039/d1ta04527j.

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Controlling the preparation of perovskite materials on the Si optoelectronics platform is a crucial step to realize perovskite-based optoelectronic devices. This review highlights the recent progress and remaining challenges in Si-based perovskite optoelectronic devices.

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