Увійти

Готові списки джерел за темами / Scandium aluminum nitride (ScAlN) / Статті в журналах

Статті в журналах з теми "Scandium aluminum nitride (ScAlN)"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Scandium aluminum nitride (ScAlN).

Автор: Grafiati

Опубліковано: 13 квітня 2024

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Scandium aluminum nitride (ScAlN)".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

N. I .M. Nor, N. Khalid, H. Aris, M. S. Mispan, and N. Aiman Syahmi. "Analysis of Different Piezoelectric Materials on the Film Bulk Acoustic Wave Resonator." International Journal of Nanoelectronics and Materials (IJNeaM) 16, DECEMBER (December 26, 2023): 121–30. http://dx.doi.org/10.58915/ijneam.v16idecember.398.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 µm × 25 µm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.

2

Hähnlein, Bernd, Tim Hofmann, Katja Tonisch, Jörg Pezoldt, Jaroslav Kovac, and Stefan Krischok. "Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applications." Key Engineering Materials 865 (September 2020): 13–18. http://dx.doi.org/10.4028/www.scientific.net/kem.865.13.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Scandium aluminum nitride (ScxAl1-xN) is a promising material for sensor applications as it exhibits enhanced piezoelectric properties compared to pristine AlN while maintaining other advantageous properties like high thermal stability. Magnetoelectric sensors in particular are used to detect magnetic fields which leads to special requirements regarding the investigated ScAlN in order to achieve high sensor sensitivities. Co-sputtered ScAlN layers are investigated in this work using XRD, XPS, FTIR and Raman spectroscopy for scandium concentrations from 0 to 34 %. The impact of Sc incorporation regarding residual biaxial strain and bond softening is discussed on basis of the experimental results. The activity of the B1 and E2 modes found in the FTIR measurements is of special interest as the presumably oxygen related excitation is expected to influence the piezoelectric properties.

3

Zhang, Qiaozhen, Mingzhu Chen, Huiling Liu, Xiangyong Zhao, Xiaomei Qin, Feifei Wang, Yanxue Tang, Keat Hoe Yeoh, Khian-Hooi Chew, and Xiaojuan Sun. "Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices." Materials 14, no. 21 (October 27, 2021): 6437. http://dx.doi.org/10.3390/ma14216437.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device’s relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure–property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d33 was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability.

4

Wei, Min, Yan Liu, Yuanhang Qu, Xiyu Gu, Yilin Wang, Wenjuan Liu, Yao Cai, Shishang Guo, and Chengliang Sun. "Development of Temperature Sensor Based on AlN/ScAlN SAW Resonators." Electronics 12, no. 18 (September 12, 2023): 3863. http://dx.doi.org/10.3390/electronics12183863.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Temperature monitoring in extreme environments presents new challenges for MEMS sensors. Since aluminum nitride (AlN)/scandium aluminum nitride (ScAlN)-based surface acoustic wave (SAW) devices have a high Q-value, good temperature drift characteristics, and the ability to be compatible with CMOS, they have become some of the preferred devices for wireless passive temperature measurement. This paper presents the development of AlN/ScAlN SAW-based temperature sensors. Three methods were used to characterize the temperature characteristics of a thin-film SAW resonator, including direct measurement by GSG probe station, and indirect measurement by oscillation circuit and antenna. The temperature characteristics of the three methods in the range of 30–100 °C were studied. The experimental results show that the sensitivities obtained with the three schemes were −28.9 ppm/K, −33.6 ppm/K, and −29.3 ppm/K. The temperature sensor using the direct measurement method had the best linearity, with a value of 0.0019%, and highest accuracy at ±0.70 °C. Although there were differences in performance, the characteristics of the three SAW temperature sensors make them suitable for sensing in various complex environments.

5

Li, Minghua, Huamao Lin, Kan Hu, and Yao Zhu. "Oxide overlayer formation on sputtered ScAlN film exposed to air." Applied Physics Letters 121, no. 11 (September 12, 2022): 111602. http://dx.doi.org/10.1063/5.0106717.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

There has been much interest in developing scandium doped aluminum nitride (ScAlN) thin films for use in electronic devices, due to their excellent piezoMEMS response, large spontaneous polarization, and the capability for CMOS-compatible integration. As with the undoped AlN film, the formation of an oxide overlayer on the air-exposed ScAlN film can modulate its surface structure and the electrical properties. In this study, we investigate the effects of surface oxidation on a ScAlN film by characterizing the film microstructure and the elemental chemical states. We found that amorphous phase and small crystallites co-exist in the oxide overlayer, which is remarkably different from the columnar (0002) crystalline texture in the bulk ScAlN film. X-ray photoelectron spectroscopy core-level analyses confirm the formation of Al–O and Sc–O bonds. Moreover, the valence band maximum of the oxide overlayer shifts toward a higher binding energy, indicating a high energy barrier at the ScAlN/metal interface. Our results suggest that ScAlN surface oxidation is a chemical reaction-driven and self-limited process.

6

Zhang, Yuchao, Bin Miao, Guanghua Wang, Hongyu Zhou, Shiqin Zhang, Yimin Hu, Junfeng Wu, Xuechao Yu, and Jiadong Li. "ScAlN Film-Based Piezoelectric Micromechanical Ultrasonic Transducers with Dual-Ring Structure for Distance Sensing." Micromachines 14, no. 3 (February 23, 2023): 516. http://dx.doi.org/10.3390/mi14030516.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Piezoelectric micromechanical ultrasonic transducers (pMUTs) are new types of distance sensors with great potential for applications in automotive, unmanned aerial vehicle, robotics, and smart homes. However, previously reported pMUTs are limited by a short sensing distance due to lower output sound pressure. In this work, a pMUT with a special dual-ring structure based on scandium-doped aluminum nitride (ScAlN) is proposed. The combination of a dual-ring structure with pinned boundary conditions and a high piezoelectric performance ScAlN film allows the pMUT to achieve a large dynamic displacement of 2.87 μm/V and a high electromechanical coupling coefficient (kt2) of 8.92%. The results of ranging experiments show that a single pMUT achieves a distance sensing of 6 m at a resonant frequency of 91 kHz, the farthest distance sensing registered to date. This pMUT provides surprisingly fertile ground for various distance sensing applications.

7

Tominaga, Takumi, Shinji Takayanagi, and Takahiko Yanagitani. "Negative-ion bombardment increases during low-pressure sputtering deposition and their effects on the crystallinities and piezoelectric properties of scandium aluminum nitride films." Journal of Physics D: Applied Physics 55, no. 10 (December 9, 2021): 105306. http://dx.doi.org/10.1088/1361-6463/ac3d5c.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Abstract Scandium aluminum nitride (ScAlN) films are being actively researched to explore their potential for use in bulk acoustic wave and surface acoustic wave resonators because of their good piezoelectric properties. Sputtering is commonly used in ScAlN film deposition. Unfortunately, it has been reported that film quality metrics such as the crystallinity and piezoelectric properties can deteriorate before the Sc concentration reaches 43% without an isostructural phase transition. One reason for this is bombardment with negative ions generated from carbon and oxygen impurities in the Sc ingots. Because the number of negative ions increases during low-pressure sputtering deposition, their effect on film quality may be considerable. In this study, we investigated negative-ion bombardment of the substrate during sputtering deposition and its effects on ScAlN crystallinity and piezoelectric properties. Negative-ion energy distribution measurements indicated that many more negative ions collide with the substrate during ScAlN film deposition than during AlN deposition. In addition, decreasing the sputtering pressure further increased the number of negative ions and their energies. It is well known that film quality improves at low pressures because increasing the mean free path reduces thermalization and scattering of sputtered particles. Although, AlN crystallinity and piezoelectric properties improved at low pressures, the properties of ScAlN films deteriorated dramatically. Therefore, the results indicated that ion bombardment increase at low pressure adversely effects ScAlN crystal growth, deteriorating crystallinity and piezoelectric properties. ScAlN films may be improved further by suppressing negative-ion bombardment of the substrate.

8

Liu, Xiaonan, Qiaozhen Zhang, Mingzhu Chen, Yaqi Liu, Jianqiu Zhu, Jiye Yang, Feifei Wang, Yanxue Tang, and Xiangyong Zhao. "Multiphysics Modeling and Analysis of Sc-Doped AlN Thin Film Based Piezoelectric Micromachined Ultrasonic Transducer by Finite Element Method." Micromachines 14, no. 10 (October 18, 2023): 1942. http://dx.doi.org/10.3390/mi14101942.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

This paper presents a Piezoelectric micromechanical ultrasonic transducer (PMUT) based on a Pt/ScAlN/Mo/SiO2/Si/SiO2/Si multilayer structure with a circular suspension film of scandium doped aluminum nitride (ScAlN). Multiphysics modeling using the finite element method and analysis of the effect of different Sc doping concentrations on the resonant frequency, the effective electromechanical coupling coefficient (keff2) and the station sensitivity of the PMUT cell are performed. The calculation results show that the resonant frequency of the ScAlN-based PMUT can be above 20 MHz and its keff2 monotonically rise with the increasing doping concentrations in ScAlN. In comparison to the pure AlN thin film-based PMUT, the static receiving sensitivity of the PMUT based on ScAlN thin film with 35% Sc doping concentration is up to 1.61 mV/kPa. Meanwhile, the static transmitting sensitivity of the PMUT is improved by 152.95 pm/V. Furthermore, the relative pulse-echo sensitivity level of the 2 × 2 PMUT array based on the Sc doping concentration of 35% AlN film is improved by 16 dB compared with that of the cell with the same Sc concentration. The investigation results demonstrate that the performance of PMUT on the proposed structure can be tunable and enhanced by a reasonable choice of the Sc doping concentration in ScAlN films and structure optimization, which provides important guidelines for the design of PMUT for practical applications.

9

Ji, Meilin, Haolin Yang, Yongxin Zhou, Xueying Xiu, Haochen Lv, and Songsong Zhang. "Bimorph Dual-Electrode ScAlN PMUT with Two Terminal Connections." Micromachines 13, no. 12 (December 19, 2022): 2260. http://dx.doi.org/10.3390/mi13122260.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

This paper presents a novel bimorph Piezoelectric Micromachined Ultrasonic Transducer (PMUT) fabricated with 8-inch standard CMOS-compatible processes. The bimorph structure consists of two layers of 20% scandium-doped aluminum nitride (Sc0.2Al0.8N) thin films, which are sandwiched among three molybdenum (Mo) layers. All three Mo layers are segmented to form the outer ring and inner plate electrodes. Both top and bottom electrodes on the outer ring are electrically linked to the center inner plate electrodes. Likewise, the top and bottom center plate electrodes are electrically connected to the outer ring in the same fashion. This electrical configuration maximizes the effective area of the given PMUT design and improves efficiency during the electromechanical coupling process. In addition, the proposed bimorph structure further simplifies the device’s electrical layout with only two-terminal connections as reported in many conventional unimorph PMUTs. The mechanical and acoustic measurements are conducted to verify the device’s performance improvement. The dynamic mechanical displacement and acoustic output under a low driving voltage (1 Vpp) are more than twice that reported from conventional unimorph devices with a similar resonant frequency. Moreover, the pulse-echo experiments indicate an improved receiving voltage of 10 mV in comparison with the unimorph counterpart (4.8 mV). The validation of device advancement in the electromechanical coupling effect by using highly doped ScAlN thin film, the realization of the proposed bimorph PMUT on an 8-inch wafer paves the path to production of next generation, high-performance piezoelectric MEMS.

10

Stoeckel, Chris, Katja Meinel, Marcel Melzer, Agnė Žukauskaitė, Sven Zimmermann, Roman Forke, Karla Hiller, and Harald Kuhn. "Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrors." Micromachines 13, no. 4 (April 15, 2022): 625. http://dx.doi.org/10.3390/mi13040625.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (Al0.68Sc0.32N) are presented and compared regarding their static deflection. Two chip designs with 2 × 3 mm2 (Design 1) and 4 × 6 mm2 (Design 2) footprint with 600 nm AlN or 2000 nm Al0.68Sc0.32N as piezoelectric transducer material are investigated. The chip with Design 1 and Al0.68Sc0.32N has a resonance frequency of 1.8 kHz and a static scan angle of 38.4° at 400 V DC was measured. Design 2 has its resonance at 2.1 kHz. The maximum static scan angle is 55.6° at 220 V DC, which is the maximum deflection measurable with the experimental setup. The static deflection per electric field is increased by a factor of 10, due to the optimization of the design and the research and development of high-performance piezoelectric transducer materials with large piezoelectric coefficient and high electrical breakthrough voltage.

11

Krey, Maximilian, Bernd Hähnlein, Katja Tonisch, Stefan Krischok, and Hannes Töpfer. "Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory." Sensors 20, no. 4 (February 13, 2020): 1001. http://dx.doi.org/10.3390/s20041001.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Magnetoelectric sensors provide the ability to measure magnetic fields down to the pico tesla range and are currently the subject of intense research. Such sensors usually combine a piezoelectric and a magnetostrictive material, so that magnetically induced stresses can be measured electrically. Scandium aluminium nitride gained a lot of attraction in the last few years due to its enhanced piezoelectric properties. Its usage as resonantly driven microelectromechanical system (MEMS) in such sensors is accompanied by a manifold of influences from crystal growth leading to impacts on the electrical and mechanical parameters. Usual investigations via nanoindentation allow a fast determination of mechanical properties with the disadvantage of lacking the access to the anisotropy of specific properties. Such anisotropy effects are investigated in this work in terms of the Young’s modulus and the strain on basis of a MEMS structures through a newly developed fully automated procedure of eigenfrequency fitting based on a new non-Lorentzian fit function and subsequent analysis using an extended Euler–Bernoulli theory. The introduced procedure is able to increase the resolution of the derived parameters compared to the common nanoindentation technique and hence allows detailed investigations of the behavior of magnetoelectric sensors, especially of the magnetic field dependent Young‘s modulus of the magnetostrictive layer.

12

Zhang, Zhenghu, Linwei Zhang, Zhipeng Wu, Yunfei Gao, and Liang Lou. "A High-Sensitivity MEMS Accelerometer Using a Sc0.8Al0.2N-Based Four Beam Structure." Micromachines 14, no. 5 (May 18, 2023): 1069. http://dx.doi.org/10.3390/mi14051069.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on a Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of this accelerometer is a silicon proof mass fixed by four piezoelectric cantilever beams. In order to enhance the sensitivity of the accelerometer, the Sc0.2Al0.8N piezoelectric film is used in the device. The transverse piezoelectric coefficient d31 of the Sc0.2Al0.8N piezoelectric film is measured by the cantilever beam method and found to be −4.7661 pC/N, which is approximately two to three times greater than that of a pure AlN film. To further enhance the sensitivity of the accelerometer, the top electrodes are divided into inner and outer electrodes; then, the four piezoelectric cantilever beams can achieve a series connection by these inner and outer electrodes. Subsequently, theoretical and finite element models are established to analyze the effectiveness of the above structure. After fabricating the device, the measurement results demonstrate that the resonant frequency of the device is 7.24 kHz and the operating frequency is 56 Hz to 2360 Hz. At a frequency of 480 Hz, the sensitivity, minimum detectable acceleration, and resolution of the device are 2.448 mV/g, 1 mg, and 1 mg, respectively. The linearity of the accelerometer is good for accelerations less than 2 g. The proposed piezoelectric MEMS accelerometer has demonstrated high sensitivity and linearity, making it suitable for accurately detecting low-frequency vibrations.

13

Jang, Youna, and Dal Ahn. "Analyzing Three Types of Design Methods for 5G N41 Band Acoustic Wave Filters." International Journal of RF and Microwave Computer-Aided Engineering 2024 (January 13, 2024): 1–12. http://dx.doi.org/10.1155/2024/4638443.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

This paper presents three design methods for acoustic wave (AW) filters: the direct conversion design method, the slope parameter method, and the band edge fitting method (BEFM). Since the conventional BVD model consists only of lumped elements and has accuracy only near the resonance frequency, an NM-BVD model capable of broadband modeling is proposed in this paper and used to design the filter. In the proposed BEFM, a systematically optimal filter method is used to design the AW filter, and each AW resonator is tuned to the filter prototype value to meet the desired specifications. Thus, the filter design time and the number of resonators can be efficiently improved, and the filter design time can be reduced compared with the direct conversion and slope parameter methods commonly used in filter design. To demonstrate the effectiveness of these design methods, the proposed methods were used to design and fabricate an N41 filter using scandium-doped aluminum nitride (ScAlN) resonators. The broadband capabilities of the filter were verified using BEFM. The design, fabrication, and measurement of a broadband filter that meets the requirements of the 5G N41 frequency band centered at 2.593 GHz with a bandwidth of 196 MHz have verified the filter fabricated using the proposed design method. The insertion loss is less than -3 dB in the target band and more than 30 dB out of band. In summary, the proposed BEFM provides an efficient and accurate method for designing AW filters.

14

Shao, Shuai, Zhifang Luo, Kangfu Liu, and Tao Wu. "Lorentz-force gyrator based on AlScN piezoelectric thin film." Applied Physics Letters 121, no. 21 (November 21, 2022): 213505. http://dx.doi.org/10.1063/5.0122325.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

This paper reports a chip-scale radio frequency Lorentz-force gyrator based on an aluminum scandium nitride (Al0.7Sc0.3N) thin film. The two-port gyrator, which is essentially a lateral overtone bulk acoustic resonator, consists of a planar coil for Lorentz-force transduction and two top-bottom electrode pairs for piezoelectric transduction. The non-reciprocity is generated by the phase transition in the Lorentz-force coupling when an external vertical magnetic field is applied. The Lorentz-force gyrators based on both AlN and Al0.7Sc0.3N thin films demonstrate good non-reciprocity, i.e., the 180° phase difference, at approximately 517 and 388 MHz, respectively. Thanks to larger piezoelectric constants, the Al0.7Sc0.3N gyrator demonstrates easier impedance matching and a wider fractional bandwidth of 6.3% at a magnetic field of 1.65 T compared to 1.3% for an AlN device. Finally, an isolator consisting of the Lorentz-force gyrator and a shunt resistor is demonstrated over 35 dB of isolation and flat unidirectional transmission.

15

Zhou, Yongxin, Yuandong Gu, and Songsong Zhang. "Nondestructive Wafer Level MEMS Piezoelectric Device Thickness Detection." Micromachines 13, no. 11 (November 5, 2022): 1916. http://dx.doi.org/10.3390/mi13111916.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

This paper introduces a novel nondestructive wafer scale thin film thickness measurement method by detecting the reflected picosecond ultrasonic wave transmitting between different interfacial layers. Unlike other traditional approaches used for thickness inspection, this method is highly efficient in wafer scale, and even works for opaque material. As a demonstration, we took scandium doped aluminum nitride (AlScN) thin film and related piezoelectric stacking layers (e.g. Molybedenum/AlScN/Molybdenum) as the case study to explain the advantages of this approach. In our experiments, a laser with a wavelength of 515 nm was used to first measure the thickness of (1) a single Molybdenum (Mo) electrode layer in the range of 100–300 nm, and (2) a single AlScN piezoelectric layer in the range of 600–1000 nm. Then, (3) the combined stacking layers were measured. Finally, (4) the thickness of a standard piezoelectric composite structure (Mo/AlScN/Mo) was characterized based on the conclusions and derivation extracted from the aforementioned sets of experiments. This type of standard piezoelectric composite has been widely adopted in a variety of Micro-electromechanical systems (MEMS) devices such as the Piezoelectric Micromachined Ultrasonic Transducer (PMUT), the Film Bulk Acoustic Resonator (FBAR), the Surface Acoustic Wave (SAW) and more. A comparison between measurement data from both in-line and off-line (using Scanning Electron Microscope) methods was conducted. The result from such in situ 8-inch wafer scale measurements was in a good agreement with the SEM data.

16

Mi, Zetian. "(Invited) Ferroelectric Nitride Semiconductors: Epitaxy, Properties, and Emerging Device Applications." ECS Meeting Abstracts MA2023-02, no. 32 (December 22, 2023): 1579. http://dx.doi.org/10.1149/ma2023-02321579mtgabs.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

The incorporation of rare-earth elements such as scandium (Sc) can transform conventional III-nitride semiconductors to be ferroelectric. In this talk I will present recent advances of ferroelectric Sc-III-nitride heterostructures and nanostructures, including epitaxy, properties and emerging device applications. Molecular beam epitaxy and properties of ScAlN and ScGaN with a wide range of Sc compositions will be discussed. Special attention will be paid to the unique ferroelectric properties of these ultrawide bandgap semiconductors. The realization of ultrathin ferroelectric nitride heterostructures and the underlying physics and properties will be discussed, together with their applications in quantum photonics and electronics.

17

Nian, Laixia, Yuanhang Qu, Xiyu Gu, Tiancheng Luo, Ying Xie, Min Wei, Yao Cai, Yan Liu, and Chengliang Sun. "Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films." Micromachines 14, no. 3 (February 27, 2023): 557. http://dx.doi.org/10.3390/mi14030557.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Piezoelectric aluminum nitride (AlN) thin film, as a commonly used material for high-frequency acoustic resonators, has been a research hotspot in the RF field. Doping Sc elements in AlN is one of most effective methods to improve the piezoelectricity of the material. In this work, the first principal calculation and Mori–Tanaka model are used to obtain the piezoelectric constants of AlN, ScAlN, and AlN/ScAlN composites. Then, five types of AlN/ScAlN thin films are prepared on 8 inch silicon substrates. The crystal quality, roughness, and stress distribution are measured to characterize the film quality. The results show that composite film can effectively solve the problem of abnormal grains and reduce the roughness. Finally, a lamb wave resonator with an AlN/Sc0.2Al0.8N composite working at 2.33 GHz is fabricated. The effective electromechanical coupling coefficient Keff2 is calculated to be 6.19%, which has the potential to design high-frequency broadband filters.

18

Zhukov, Vladlen V., Denis A. Shcherbakov, Pavel B. Sorokin, and Boris P. Sorokin. "DEPENDENCE OF PHYSICAL PROPERTIES OF PIEZOELECTRIC ALUMINUM-SCANDIUM NITRIDE ON SCANDIUM CONCENTRATION." IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA 64, no. 6 (May 16, 2021): 95–103. http://dx.doi.org/10.6060/ivkkt.20216406.6384.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

In this work the physical properties of the piezoelectric aluminum-scandium nitride (ASN) solid solution as a function of scandium concentration were studied using the density functional theory and experimental methods. The phase transition from the wurtzite phase to the rock salt phase at a Sc concentration of 43% was shown. The barriers of transformation from the wurtzite phase to the rock salt phase for various Sc concentrations were obtained. The behavior of the ASN piezoelectric constant d33 calculated by the piezoelectric constants e33, e31, and e15 shows a sharp increase with increasing Sc concentration compared to aluminum nitride AlN. The relationship between the increase in the piezoelectric response of ASN and the softening of the lattice, accompanied by a decrease in the main elastic constants C11, C33, C44 and C66, as well as a decrease in the c/a ratio with increasing Sc concentration, is shown. ASN films with a predominance of the crystal orientation (00·2) were obtained experimentally by magnetron sputtering. The structural properties of the films were studied by X-ray diffraction analysis. A comparison of the experimentally obtained dependence of the c/a ratio on the Sc concentration with the theoretical values showed a good correspondence. Studies of the physical properties of ASN thin films were performed using microwave multi-overtone composite resonators on diamond substrates with a longitudinal bulk acoustic wave (BAW) as the operating mode in the range of 0.5 – 20 GHz. The frequency dependences of the Q-factor of BAW-resonators with different ASN films were obtained, and the frequency dependences of the square of the modulus of the form factor as |m|2 were calculated. The dependences of the elastic constant С33 and the piezoelectric constant e33 for the ASN films with different Sc concentrations were calculated. The calculated and measured values of these constants are agreed within the experimental error.

19

Park, Mingyo, Zhijian Hao, Rytis Dargis, Andrew Clark, and Azadeh Ansari. "Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators." Journal of Microelectromechanical Systems 29, no. 4 (August 2020): 490–98. http://dx.doi.org/10.1109/jmems.2020.3001233.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Leone, Stefano, Jana Ligl, Christian Manz, Lutz Kirste, Theodor Fuchs, Hanspeter Menner, Mario Prescher, et al. "Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride." physica status solidi (RRL) – Rapid Research Letters 14, no. 1 (November 7, 2019): 1900535. http://dx.doi.org/10.1002/pssr.201900535.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Žukauskaitė, Agnė. "Editorial for Special Issue “Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices”." Micromachines 14, no. 5 (May 18, 2023): 1067. http://dx.doi.org/10.3390/mi14051067.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Kozlov, A. G., and T. N. Torgash. "Influence of scandium concentration on parameters of piezoelectric transducer based on aluminum scandium nitride." Journal of Physics: Conference Series 1546 (May 2020): 012118. http://dx.doi.org/10.1088/1742-6596/1546/1/012118.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

23

AKIYAMA, Morito, Tatsuo TABARU, Keiko NISHIKUBO, Akihiko TESHIGAHARA, and Kazuhiko KANO. "Preparation of scandium aluminum nitride thin films by using scandium aluminum alloy sputtering target and design of experiments." Journal of the Ceramic Society of Japan 118, no. 1384 (2010): 1166–69. http://dx.doi.org/10.2109/jcersj2.118.1166.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Kim, Young-Wook, Sung-Hee Lee, Toshiyuki Nishimura, and Mamoru Mitomo. "Heat-resistant silicon carbide with aluminum nitride and scandium oxide." Acta Materialia 53, no. 17 (October 2005): 4701–8. http://dx.doi.org/10.1016/j.actamat.2005.07.002.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Rassay, Sushant, Dicheng Mo, and Roozbeh Tabrizian. "Dual-Mode Scandium-Aluminum Nitride Lamb-Wave Resonators Using Reconfigurable Periodic Poling." Micromachines 13, no. 7 (June 26, 2022): 1003. http://dx.doi.org/10.3390/mi13071003.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

This paper presents the use of ferroelectric behavior in scandium–aluminum nitride (ScxAl1−xN) to create dual-mode Lamb-wave resonators for the realization of intrinsically configurable radio-frequency front-end systems. An integrated array of intrinsically switchable dual-mode Lamb-wave resonators with frequencies covering the 0.45–3 GHz spectrum. The resonators are created in ferroelectric scandium–aluminum nitride (Sc0.28Al0.72N) film and rely on period poling for intrinsic configuration between Lamb modes with highly different wavelengths and frequencies. A comprehensive analytical model is presented, formulating intrinsically switchable dual-mode operation and providing closed-form derivation of electromechanical coupling (kt2) in the two resonance modes as a function of electrode dimensions and scandium content. Fabricated resonator prototypes show kt2s as high as 4.95%, when operating in the first modes over 0.45–1.6 GHz, 2.23% when operating in the second mode of operation over 0.8–3 GHz, and series quality factors (Qs) over 300–800. Benefiting from lithographical frequency tailorability and intrinsic switchability that alleviate the need for external multiplexers, and large kt2 and Q, dual-mode Sc0.28Al0.72N Lamb-wave resonators are promising candidates to realize single-chip multi-band reconfigurable spectral processors for radio-frequency front-ends of modern wireless systems.

26

Shifat, A. S. M. Zadid, Isaac Stricklin, Ravi Kiran Chityala, Arjun Aryal, Giovanni Esteves, Aleem Siddiqui, and Tito Busani. "Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution." Nanomaterials 13, no. 2 (January 9, 2023): 274. http://dx.doi.org/10.3390/nano13020274.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ScxAl1−xN a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating ScxAl1−xN devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of ScxAl1−xN (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall verticality of 85°~90° (±0.2°) was maintained for all Sc compositions. Based on these experimental outcomes, it is anticipated that this etching procedure will be advantageous in the fabrication of acoustic, photonic, and piezoelectric devices.

27

Wang, Dixiong, Jeffrey Zheng, Pariasadat Musavigharavi, Wanlin Zhu, Alexandre C. Foucher, Susan E. Trolier-McKinstry, Eric A. Stach, and Roy H. Olsson. "Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films." IEEE Electron Device Letters 41, no. 12 (December 2020): 1774–77. http://dx.doi.org/10.1109/led.2020.3034576.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Akiyama, Morito, Keiichi Umeda, Atsushi Honda, and Toshimi Nagase. "Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films." Applied Physics Letters 102, no. 2 (January 14, 2013): 021915. http://dx.doi.org/10.1063/1.4788728.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Akiyama, Morito, Kazuhiko Kano, and Akihiko Teshigahara. "Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films." Applied Physics Letters 95, no. 16 (October 19, 2009): 162107. http://dx.doi.org/10.1063/1.3251072.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Song, Yiwen, Carlos Perez, Giovanni Esteves, James Spencer Lundh, Christopher B. Saltonstall, Thomas E. Beechem, Jung In Yang, et al. "Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond." ACS Applied Materials & Interfaces 13, no. 16 (April 14, 2021): 19031–41. http://dx.doi.org/10.1021/acsami.1c02912.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Musavigharavi, Pariasadat, Andrew C. Meng, Dixiong Wang, Jeffery Zheng, Alexandre C. Foucher, Roy H. Olsson, and Eric A. Stach. "Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films." Journal of Physical Chemistry C 125, no. 26 (June 24, 2021): 14394–400. http://dx.doi.org/10.1021/acs.jpcc.1c01523.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Moreira, Milena, Johan Bjurström, Ilia Katardjev, and Ventsislav Yantchev. "Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications." Vacuum 86, no. 1 (July 2011): 23–26. http://dx.doi.org/10.1016/j.vacuum.2011.03.026.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Wang, Jialin, Mingyo Park, Stefan Mertin, Tuomas Pensala, Farrokh Ayazi, and Azadeh Ansari. "A Film Bulk Acoustic Resonator Based on Ferroelectric Aluminum Scandium Nitride Films." Journal of Microelectromechanical Systems 29, no. 5 (October 2020): 741–47. http://dx.doi.org/10.1109/jmems.2020.3014584.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Alvarez, Gustavo A., Joseph Casamento, Len van Deurzen, Md Irfan Khan, Kamruzzaman Khan, Eugene Jeong, Elaheh Ahmadi, Huili Grace Xing, Debdeep Jena, and Zhiting Tian. "Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy." Materials Research Letters 11, no. 12 (November 14, 2023): 1048–54. http://dx.doi.org/10.1080/21663831.2023.2279667.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Liu, Xiwen, Dixiong Wang, Kwan-Ho Kim, Keshava Katti, Jeffrey Zheng, Pariasadat Musavigharavi, Jinshui Miao, Eric A. Stach, Roy H. Olsson, and Deep Jariwala. "Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory." Nano Letters 21, no. 9 (April 21, 2021): 3753–61. http://dx.doi.org/10.1021/acs.nanolett.0c05051.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Huang, Chukun, Haotian Shi, Linfeng Yu, Kang Wang, Ming Cheng, Qiang Huang, Wenting Jiao, and Junqiang Sun. "Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film." Advanced Optical Materials 10, no. 6 (January 21, 2022): 2102334. http://dx.doi.org/10.1002/adom.202102334.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Ng, D. K. T., T. Zhang, L. Y. Siow, L. Xu, C. P. Ho, H. Cai, L. Y. T. Lee, Q. Zhang, and N. Singh. "A functional CMOS compatible MEMS pyroelectric detector using 12%-doped scandium aluminum nitride." Applied Physics Letters 117, no. 18 (November 2, 2020): 183506. http://dx.doi.org/10.1063/5.0024192.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Wang, Qi, Yipeng Lu, Sergey Mishin, Yury Oshmyansky, and David A. Horsley. "Design, Fabrication, and Characterization of Scandium Aluminum Nitride-Based Piezoelectric Micromachined Ultrasonic Transducers." Journal of Microelectromechanical Systems 26, no. 5 (October 2017): 1132–39. http://dx.doi.org/10.1109/jmems.2017.2712101.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Wang, Jialin, Yue Zheng, and Azadeh Ansari. "Ferroelectric Aluminum Scandium Nitride Thin Film Bulk Acoustic Resonators with Polarization‐Dependent Operating States." physica status solidi (RRL) – Rapid Research Letters 15, no. 5 (April 23, 2021): 2100034. http://dx.doi.org/10.1002/pssr.202100034.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Jia, Licheng, Lei Shi, Zhaoyang Lu, Chengliang Sun, and Guoqiang Wu. "A High-Performance 9.5% Scandium-Doped Aluminum Nitride Piezoelectric MEMS Hydrophone With Honeycomb Structure." IEEE Electron Device Letters 42, no. 12 (December 2021): 1845–48. http://dx.doi.org/10.1109/led.2021.3120806.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Dou, Wentong, Congquan Zhou, Ruidong Qin, Yumeng Yang, Huihui Guo, Zhiqiang Mu, and Wenjie Yu. "Super-High-Frequency Bulk Acoustic Resonators Based on Aluminum Scandium Nitride for Wideband Applications." Nanomaterials 13, no. 20 (October 10, 2023): 2737. http://dx.doi.org/10.3390/nano13202737.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Despite the dominance of bulk acoustic wave (BAW) filters in the high-frequency market due to their superior performance and compatible integration process, the advent of the 5G era brings up new challenges to meet the ever-growing demands on high-frequency and large bandwidth. Al1-xScxN piezoelectric films with high Sc concentration are particularly desirable to achieve an increased electromechanical coupling (Kt2) for BAW resonators and also a larger bandwidth for filters. In this paper, we designed and fabricated the Al1-xScxN-based BAW resonators with Sc concentrations as high as 30%. The symmetry of the resonance region, border frame structure and thickness ratio of the piezoelectric stack are thoroughly examined for lateral modes suppression and resonant performance optimization. Benefiting from the 30% Sc doping, the fabricated BAW resonators demonstrate a large effective electromechanical coupling (Keff2) of 17.8% at 4.75 GHz parallel resonant frequency. Moreover, the temperature coefficient of frequency (TCF) of the device is obtained as −22.9 ppm/°C, indicating reasonable temperature stability. Our results show that BAW resonators based on highly doped Al1-xScxN piezoelectric film have great potential for high-frequency and large bandwidth applications.

42

Liu, Xiwen, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric A. Stach, Roy Olsson, and Deep Jariwala. "Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios." Applied Physics Letters 118, no. 20 (May 17, 2021): 202901. http://dx.doi.org/10.1063/5.0051940.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Zheng, Jeffrey X., Dixiong Wang, Pariasadat Musavigharavi, Merrilyn Mercy Adzo Fiagbenu, Deep Jariwala, Eric A. Stach, and Roy H. Olsson. "Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure." Journal of Applied Physics 130, no. 14 (October 14, 2021): 144101. http://dx.doi.org/10.1063/5.0064041.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Tang, Zichen, Giovanni Esteves, Jeffrey Zheng, and Roy H. Olsson. "Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1−xScxN in Aqueous KOH Solutions." Micromachines 13, no. 7 (July 2, 2022): 1066. http://dx.doi.org/10.3390/mi13071066.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al1−xScxN) thin films have achieved widespread application in radio frequency (RF) acoustic devices. The resistance to etching at high scandium alloying, however, has inhibited the realization of devices able to exploit the highest electromechanical coupling coefficients. In this work, we investigated the vertical and lateral etch rates of sputtered AlN and Al1−xScxN with Sc concentration x ranging from 0 to 0.42 in aqueous potassium hydroxide (KOH). Etch rates and the sidewall angles were reported at different temperatures and KOH concentrations. We found that the trends of the etch rate were unanimous: while the vertical etch rate decreases with increasing Sc alloying, the lateral etch rate exhibits a V-shaped transition with a minimum etch rate at x = 0.125. By performing an etch on an 800 nm thick Al0.875Sc0.125N film with 10 wt% KOH at 65 °C for 20 min, a vertical sidewall was formed by exploiting the ratio of the 1011¯ planes and 11¯00 planes etch rates. This method does not require preliminary processing and is potentially beneficial for the fabrication of lamb wave resonators (LWRs) or other microelectromechanical systems (MEMS) structures, laser mirrors and Ultraviolet Light-Emitting Diodes (UV-LEDs). It was demonstrated that the sidewall angle tracks the trajectory that follows the 1¯212¯ of the hexagonal crystal structure when different c/a ratios were considered for elevated Sc alloying levels, which may be used as a convenient tool for structure/composition analysis.

45

Ko, Shin-Il, Sang-Jin Lee, Myong-Hoon Roh, Wonjoong Kim, and Young-Wook Kim. "Effect of annealing on mechanical properties of silicon carbide sintered with aluminum nitride and scandium oxide." Metals and Materials International 15, no. 1 (February 2009): 149–53. http://dx.doi.org/10.1007/s12540-009-0149-x.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Akiyama, Morito, Toshihiro Kamohara, Kazuhiko Kano, Akihiko Teshigahara, Yukihiro Takeuchi, and Nobuaki Kawahara. "Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering." Advanced Materials 21, no. 5 (December 2, 2008): 593–96. http://dx.doi.org/10.1002/adma.200802611.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Bohnen, Tim, Gerbe W. G. van Dreumel, Paul R. Hageman, Rienk E. Algra, Willem J. P. van Enckevort, Elias Vlieg, Marcel A. Verheijen, and James H. Edgar. "Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H-SiC substrates by HVPE." physica status solidi (a) 206, no. 12 (August 14, 2009): 2809–15. http://dx.doi.org/10.1002/pssa.200925060.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Wang, Yaxin, Yang Zou, Chao Gao, Xiyu Gu, Ye Ma, Yan Liu, Wenjuan Liu, Jeffrey Bo Woon Soon, Yao Cai, and Chengliang Sun. "Effects of Electric Bias on Different Sc-Doped AlN-Based Film Bulk Acoustic Resonators." Electronics 11, no. 14 (July 11, 2022): 2167. http://dx.doi.org/10.3390/electronics11142167.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Film bulk acoustic resonators (FBARs) based on aluminum nitride (AlN) and scandium-doped aluminum nitride (AlScN) exhibit tremendous application aspects in the radio frequency front-end due to achievable high-frequency characteristics, superior thermal performances and compatibility with harsh environments. Delicately controlling the resonant frequency (fs) of FBAR is essential for integrating filters or modules. In this work, we provide a practical feasibility in adjusting fs of AlN and AlScN FBAR using external direct current electric bias (EDC). When applying a negative EDC (the direction along the reversed c-axis), fs shifts to a lower frequency, whereas a positive EDC brings a higher fs. In order to extract the equivalent values of the stiffness coefficient (c33), piezoelectric coefficient (e33) and dielectric constant (εzz) of AlN and AlScN piezoelectric materials, we adopted the electromechanical equivalent Mason model. The results show that the equivalent values of c33 increase with the change of EDC from negative to positive, and, on the other hand, those of e33 and εzz decrease. Our work provides a systematic investigation on the electric field-influenced stiffening effect of AlN and AlScN piezoelectric films and opens a feasibility for frequency-tunable resonators.

49

Gillinger, Manuel, Theresia Knobloch, Michael Schneider, and Ulrich Schmid. "Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium doped Aluminum Nitride on Sapphire." Proceedings 1, no. 4 (August 17, 2017): 341. http://dx.doi.org/10.3390/proceedings1040341.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Bartoli, Florian, Jérémy Streque, Jaafar Ghanbaja, Philippe Pigeat, Pascal Boulet, Sami Hage-Ali, Natalya Naumenko, A. Redjaïmia, Thierry Aubert, and Omar Elmazria. "Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications." Sensors 20, no. 16 (August 17, 2020): 4630. http://dx.doi.org/10.3390/s20164630.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Анотація:

Scandium aluminum nitride (ScxAl1-xN) films are currently intensively studied for surface acoustic waves (SAW) filters and sensors applications, because of the excellent tradeoff they present between high SAW velocity, large piezoelectric properties and wide bandgap for the intermediate compositions with an Sc content between 10 and 20%. In this paper, the growth of Sc0.09Al0.91N and Sc0.18Al0.82N films on sapphire substrates by sputtering method is investigated. The plasma parameters were optimized, according to the film composition, in order to obtain highly-oriented films. X-ray diffraction rocking-curve measurements show a full width at half maximum below 1.5°. Moreover, high-resolution transmission electron microscopy investigations reveal the epitaxial nature of the growth. Electrical characterizations of the Sc0.09Al0.91N/sapphire-based SAW devices show three identified modes. Numerical investigations demonstrate that the intermediate compositions between 10 and 20% of scandium allow for the achievement of SAW devices with an electromechanical coupling coefficient up to 2%, provided the film is combined with electrodes constituted by a metal with a high density.