Добірка наукової літератури з теми "Scanning electron microscopy (MEB)"

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Статті в журналах з теми "Scanning electron microscopy (MEB)"

1

Rong, Yun Long, Shao Fei Wang, Dan Dan Jia, et al. "Preparation of Porous Carbon Material by Carbonizing Polyacrylonitrile Microspheres." Applied Mechanics and Materials 253-255 (December 2012): 884–87. http://dx.doi.org/10.4028/www.scientific.net/amm.253-255.884.

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Анотація:
PAN microspheres were crosslinked with divinyl benzene (DVB) and styrene (St), and then pre-oxidized under atmospheric pressure, porous carbon microspheres were produced by carbonizing the pretreated microspheres under nitrogen protection. Morphology and structure characterizations of the materials were performed by employing scanning electron microscopy (SEM), transmission electron microscopy (TEM), nitrogen adsorption test, etc. The results show that the primitive PAN microspheres display flower-like structures, while the carbonized pretreated PAN microspheres exhibit a high porosity as well
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2

Naggar, Ahmed H., Ahmed Kotb, Ahmed A. Gahlan, Mahmoud H. Mahross, Abd El-Aziz Y. El-Sayed, and Adel A. Abdelwahab. "Graphite Studded with Facile-Synthesized Cu2O Nanoparticle-Based Cubes as a Novel Electrochemical Sensor for Highly Sensitive Voltametric Determination of Mebeverine Hydrochloride." Chemosensors 9, no. 2 (2021): 35. http://dx.doi.org/10.3390/chemosensors9020035.

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Herein, a feasible chemical reduction method followed by intensive mixing was applied for the preparation of an attractive material based on graphite studded with cuprous oxide nanoparticle-based cubes (Cu2ONPs–C@G). Transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray diffraction (XRD) and cyclic voltammetry (CV) were utilized for characterization. Cuprous oxide nanoparticles (Cu2ONPs), with a diameter range mainly distributed from 4 to 20 nm, aggregate to form microcubes (Cu2ONPs–C) with an average diameter of about 367 nm. Paste electrode was prepared using Cu2O
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3

Vanfleet, R. R., D. Muller, H. J. Gossmann, and J. Silcox. "Antimony Delta Doping by Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy." Microscopy and Microanalysis 5, S2 (1999): 614–15. http://dx.doi.org/10.1017/s1431927600016391.

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Анотація:
MBE techniques allow the fabrication of exceptionally sharp compositional changes such as delta doped layers in semiconductors. Producing these spatially confined doped layers is critical to many innovative device designs. The spatial confinement of these delta doped structures can be less than the measurement resolution of the currently standard SIMS and RBS techniques. This allows only the upper limits on the layer width to be measured. These SIMS and RBS methods are also inadequate for the two dimensional information desired for future device design and development. More recently developed
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4

Guerrero, Gabriela Peñuelas, Ingrid Jiménez Cosme, Pilar Tapia López, et al. "Technical Study of a set of Metallic Artifacts from the Maya Site of Lagartero, Chiapas, Mexico." MRS Proceedings 1374 (2012): 125–35. http://dx.doi.org/10.1557/opl.2012.1383.

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ABSTRACTDuring the excavations made at a burial of the post-Classic Mayan period (1220-1521 A.D.) in the pyramid number 2 of the pre-Hispanic site of Lagartero, Chiapas, Mexico, a set of four small metallic artifacts depicting reptile’s heads, were recovered. The objects were in poor conservation conditions and were taken to the Metal Conservation Laboratory of the National School of Conservation (ENCRyM- INAH) for suitable cleaning and conservation treatments.Analyses allowed identifying important technological features such as gilding remains. The analytical techniques included optical micro
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5

TANAHASHI, Katsuto, Yuichi KAWAMURA, Naohisa INOUE, and Yoshikazu HOMMA. "Three Dimensional Growth in GaAs MBE Studied by in-situ Scanning Electron Microscopy." Hyomen Kagaku 19, no. 11 (1998): 747–51. http://dx.doi.org/10.1380/jsssj.19.747.

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6

Tanahashi, K., Y. Kawamura, N. Inoue, Y. Homma, and J. Osaka. "Surface-roughening processes in GaAs MBE studied by in situ scanning electron microscopy." Journal of Crystal Growth 188, no. 1-4 (1998): 205–10. http://dx.doi.org/10.1016/s0022-0248(98)00066-9.

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7

Lloret, Fernando, D. Araujo, M. P. Villar, L. Liu, and Konstantinos Zekentes. "Si NWs Conversion to Si-SiC Core-Shell NWs by MBE." Materials Science Forum 821-823 (June 2015): 965–69. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.965.

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Анотація:
Si nanowires (NWs) samples have been converted to silicon carbide (SiC) NWs at different conditions of substrate temperature in an ultra-high vacuum using a molecular beam epitaxy (MBE) set-up. Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED) have been in-situ carried out to control the growth process. Scanning electron microscopy (SEM) and conventional transmission electron microscopy (CTEM) have been used to characterize the resulting nanostructures. In addition, the samples have been prepared by focused ion beam (FIB) in order to have electron-transp
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8

Aguilera Mandujano, A., and J. Serrato Rodriguez. "Synthesis and characterization of titania/graphene nanocomposite for application in photocatalysis." Revista Mexicana de Física 66, no. 5 Sept-Oct (2020): 610. http://dx.doi.org/10.31349/revmexfis.66.610.

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Анотація:
Titanium dioxide has been extensively investigated as a photocatalyst for water purification, presenting limitations such as recombination of electron-hole pairs generated by photons. The titania / graphene nanocomposites are promising materials to overcome these limitations due to the high specific area of graphene and unique electronic properties. In this work, an anatase-graphene nanocomposite was synthesized by a simple mixture assisted by ultrasound. Graphene was obtained by electrochemical exfoliation of graphite using the electrolysis technique. On the other hand, anatase was synthesize
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9

Zsebök, Otto, Jan V. Thordson, Qingxiang Zhao, Ulf Södervall, Lars Ilver, and Thorvald G. Andersson. "The Effect of Al in Plasma-assisted MBE-grown GaN." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 209–15. http://dx.doi.org/10.1557/s1092578300004294.

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Анотація:
We have grown GaN, with addition of a 0.10 to 0.33 % Al, on sapphire(0001) substrates by solid-source RF-plasma assisted MBE. The Al-concentration was determined by secondary ion-mass spectrometry and Auger-electron spectroscopy, while the layer quality was assessed by photoluminescence and high-resolution scanning electron microscopy. Microscopy revealed a meandering pattern and a surface roughness varying with Al-content. The smallest surface roughness was obtained at 0.10 % Al. Photoluminescence revealed two main peaks attributed to the neutral donor-bound exciton. Its energy increased slig
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10

Fan, Yunan, and Fugang Qi. "Effect of rapid cold stamping on the precipitation and mechanical properties of Al–Cu–Mg alloy." Materials Express 12, no. 2 (2022): 355–61. http://dx.doi.org/10.1166/mex.2022.2142.

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Анотація:
High-angle annular dark-field scanning transmission electron microscopy, scanning electron microscopy, and tensile tests were used to investigate the effects of rapid cold stamping deformation on the precipitation and mechanical properties of spray-formed fine-grained Al–Cu–Mg alloy during aging. The number of longplate S′ phases in peak-aged samples evidently increases with increasing number of rapid cold stamping passes. After two passes of rapid cold stamping, the distribution of long-plate S′ phases in the samples is evidently uneven, with high density in some areas and low density in some
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