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Добірка наукової літератури з теми "Semiconductors"

Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 25 липня 2025

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Статті в журналах з теми "Semiconductors"

1

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat

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2

Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (2022): 245501. http://dx.doi.org/10.1063/5.0096697.

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We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be loc

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3

Aygün, Sultanova Haji gizi, and Gahramanova Khazar gizi Didem. "THIRD GENERATION SEMICONDUCTORS." Deutsche internationale Zeitschrift für zeitgenössische Wissenschaft 97 (February 7, 2025): 42–44. https://doi.org/10.5281/zenodo.14832376.

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With the increasingly serious problems of environmental pollution and global warming, the research and application of renewable energy sources have attracted unprecedented attention. Among them, semiconductor technology, as an important tool for promoting green energy transformation, is attracting more and more attention from scientific research and industry. In particular, third-generation semiconductor materials are revolutionizing the field of renewable energy due to their superior physical properties and application prospects. With the rapid development of technology, third-generation

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4

Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang, and Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys." Materials Science Forum 1107 (December 6, 2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.

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Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These m

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5

Xu, Yuanqing, Weibiao Wang, Zhexue Chen, et al. "A general strategy for semiconductor quantum dot production." Nanoscale 13, no. 17 (2021): 8004–11. http://dx.doi.org/10.1039/d0nr09067k.

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6

Łukasiak, Lidia, and Andrzej Jakubowski. "History of Semiconductors." Journal of Telecommunications and Information Technology, no. 1 (June 26, 2023): 3–9. http://dx.doi.org/10.26636/jtit.2010.1.1015.

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The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices).

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7

WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS." SPIN 03, no. 04 (2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.

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Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temper

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8

B. Prakash Ayyappan, T. Parthiban, M. Barkavi, V. Nithyapoorani, M. Sathya, and G. Gopperumdevi. "Study on enhanced real time applications of compound semiconductor (SiC and GaN) power devices with AI and IoT Technologies." International Journal of Science and Research Archive 12, no. 2 (2024): 947–64. http://dx.doi.org/10.30574/ijsra.2024.12.2.1309.

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Compound semiconductors, composed of two or more elements, differ from single-element semiconductors like silicon. These materials are crucial because they have a direct band gap, unlike elemental semiconductors such as silicon and germanium, making them ideal for optoelectronic applications like LEDs, semiconductor lasers, and photo detectors. Robots rely on sophisticated sensors to collect vital data for their operation, including internal data on temperature, moisture, movement, and position, as well as external data from images, infrared light, and sound, processed through semiconductor un

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9

Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah, and Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices." Materials Science Forum 737 (January 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.

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Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of

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10

Tang, Minghao. "Characteristics, application and development trend of the third-generation semiconductor." Applied and Computational Engineering 7, no. 1 (2023): 41–46. http://dx.doi.org/10.54254/2755-2721/7/20230337.

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Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more ex

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Дисертації з теми "Semiconductors"

1

Hong, Sang Jeen. "Real-time malfunction diagnosis and prognosis of reactive ion etching using neural networks." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180227/unrestricted/hong%5Fsang%5Fj%5F200312%5Fphd.pdf.

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2

Liu, Jia. "Optical spectroscopic study of GaAs with dilute nitrogen doping /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20LIU.

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3

Park, Seung-Han. "Excitonic optical nonlinearities in semiconductors and semiconductor microstructures." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184551.

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This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semiconductor microstructures. The main emphasis is placed on the evolution of optical nonlinearities as one goes from bulk to quantum-confined structures. Included are experimental studies of molecular-beam-epitaxially-grown bulk GaAs and ZnSe, GaAs/AlGaAs multiple-Quantum-Wells (MQW's), and finally, quantum-confined CdSe-doped glasses. The microscopic origins and magnitudes of the optical nonlinearities of bulk GaAs and ZnSe were investigated and the exciton recovery time in ZnSe was measured. A c

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4

Mardikar, Yogesh Mukesh. "Energy analysis, diagnostics, and conservation in semiconductor manufacturing." Morgantown, W. Va. : [West Virginia University Libraries], 2004. https://etd.wvu.edu/etd/controller.jsp?moduleName=documentdata&jsp%5FetdId=3748.

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Thesis (M.S.)--West Virginia University, 2004.<br>Title from document title page. Document formatted into pages; contains viii, 152 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 106-108).

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5

Ramamurthi, Vikram. "Analysis of production control methods for semiconductor research and development fabs using simulation /." Link to online version, 2004. https://ritdml.rit.edu/dspace/handle/1850/938.

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6

Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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7

Newson, D. J. "Electronic transport in III-V semiconductors and semiconductor devices." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382242.

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8

Calhoun, Kenneth Harold. "Thin film compound semiconductor devices for photonic interconnects." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/15478.

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9

Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /." Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.

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10

Peng, Harry W. "The effects of stress on gallium arsenide device characteristics." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/28584.

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Анотація:

For VLSI applications, it is essential to have consistent device characteristics for devices fabricated on different fabrication runs, on different wafers, and especially across a single wafer. MESFETs fabricated on GaAs have been found to have an orientation dependence in their threshold voltage and other characteristics. For MESFETs with gate length less than 2 μm, changing the device orientation can so significantly alter the device characteristics that it must be considered during the transistor design stage. The causes for the orientation dependence in the device characteristics have been

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Книги з теми "Semiconductors"

1

Vavilov, V. S., and N. A. Ukhin. Radiation Effects in Semiconductors and Semiconductor Devices. Springer US, 1995. http://dx.doi.org/10.1007/978-1-4684-9069-5.

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2

Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03770-6.

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3

Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03299-2.

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4

Juha, Kostamovaara, and Vainshtein Sergey, eds. Breakdown phenomena in semiconductors and semiconductor devices. World Scientific, 2005.

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5

Vavilov, V. S. Radiation Effects in Semiconductors and Semiconductor Devices. Springer US, 1995.

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6

Shah, J. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. Springer, 1996.

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7

(Firm), Lucent Technologies, ed. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. 2nd ed. Springer Verlag, 1999.

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8

Madelung, O., ed. Semiconductors. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-662-00464-7.

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9

Pech-Canul, Martin I., and Nuggehalli M. Ravindra, eds. Semiconductors. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-02171-9.

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10

Coughran, William Marvin, Julian Cole, Peter Llyod, and Jacob K. White, eds. Semiconductors. Springer New York, 1994. http://dx.doi.org/10.1007/978-1-4613-8407-6.

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Частини книг з теми "Semiconductors"

1

Messerschmidt, Ulrich. "Semiconductors." In Dislocation Dynamics During Plastic Deformation. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-03177-9_6.

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2

Wesolowski, Robert A., Anthony P. Wesolowski, and Roumiana S. Petrova. "Semiconductors." In The World of Materials. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-17847-5_7.

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3

Hummel, Rolf E. "Semiconductors." In Electronic Properties of Materials. Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-662-02424-9_8.

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4

Ibach, Harald, and Hans Lüth. "Semiconductors." In Advanced Texts in Physics. Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-662-05342-3_12.

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5

Fahlman, Bradley D. "Semiconductors." In Materials Chemistry. Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-0693-4_4.

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6

Garcia, Narciso, Arthur Damask, and Steven Schwarz. "Semiconductors." In Physics for Computer Science Students. Springer New York, 1998. http://dx.doi.org/10.1007/978-1-4612-1616-2_25.

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7

Hummel, Rolf E. "Semiconductors." In Electronic Properties of Materials. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-017-4914-5_8.

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8

Watson, John. "Semiconductors." In Mastering Electronics. Macmillan Education UK, 1986. http://dx.doi.org/10.1007/978-1-349-08533-0_6.

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9

Warnes, Lionel. "Semiconductors." In Electronic and Electrical Engineering. Macmillan Education UK, 1998. http://dx.doi.org/10.1007/978-1-349-15052-6_6.

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10

Hummel, Rolf E. "Semiconductors." In Electronic Properties of Materials. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-86538-1_8.

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Тези доповідей конференцій з теми "Semiconductors"

1

Yin, X., Xinxin Guo, Fred H. Pollak, G. D. Pettit, Jerry M. Woodall, and Eun-He Cirlin. "Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique." In Semiconductors '92, edited by Orest J. Glembocki. SPIE, 1992. http://dx.doi.org/10.1117/12.60452.

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2

Vina, Luis, Miquel Garriga, and Manuel Cardona. "Spectral ellipsometry of semiconductors and semiconductor structures." In Semi - DL tentative, edited by Fred H. Pollak, Manuel Cardona, and David E. Aspnes. SPIE, 1990. http://dx.doi.org/10.1117/12.20842.

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3

Menendez, Jose. "Resonance Raman scattering in semiconductors and semiconductor microstructures." In Semi - DL tentative, edited by Fred H. Pollak, Manuel Cardona, and David E. Aspnes. SPIE, 1990. http://dx.doi.org/10.1117/12.20855.

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4

Mead, Carver. "Semiconductors." In ACM97: The Next 50 Years of Computing. ACM Press, 1997. http://dx.doi.org/10.1145/2723279.2723281.

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5

Kondo, Takashi, Kaoru Morita, and Ryoichi Ito. "Second-Order Nonlinear Optical Properties of Wide-Bandgap Semiconductors." In Nonlinear Optics: Materials, Fundamentals and Applications. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/nlo.1996.nthe.23.

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There have been growing interest in III-V semiconductors as promising nonlinear optical materials for frequency conversion devices. These devices are based on quasi-phase-matching that is achieved by spatially modulating large quadratic optical nonlinearities of semiconductors [1–5]. In order to exploit the large nonlinearities of semiconductor epitaxial films, we have developed two methods to determine the nonlinear optical coefficients of thin films by reflected second-harmonic measurements [6,7], In this paper, we will present nonlinear optical properties of wide-bandgap semiconductors, A1P

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6

Lindberg, Markus, Sunghyuck An, Stephan W. Koch, and Murray Sargent. "Pump field modulation of resonance fluorescence in semiconductors." In OSA Annual Meeting. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.wr2.

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We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electronhole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations1 for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the medium to follow adiabatically the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal asym

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7

Podlesnik, D. V., H. H. Gilgen, C. J. Chen, and R. M. Osgood. "Effects of Optical Properties on Wet Etching of Semiconductors." In Microphysics of Surfaces, Beams, and Adsorbates. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/msba.1985.wd3.

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Many laser microchemical processes, for example, metal photodeposition and semiconductor annealing, are influenced by a surface electromagnetic field which results from the interaction of the incident light with the surface. This effect has not been extensively documented in laser etching of semiconductors. In this talk, we will show that such effects can play an important role in determining the etch profile and surface structure obtained from wet etching of semiconductors. In particular, the formation of surface ripples and the fabrication of high-aspect-ratio via holes will be discussed.

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8

Nees, John A. "Metal-semiconductor-metal photodetectors on low-temperature-grown semiconductors." In OE/LASE '94, edited by Gail J. Brown, Didier J. Decoster, Joanne S. LaCourse, Yoon-Soo Park, Kenneth D. Pedrotti, and Susan R. Sloan. SPIE, 1994. http://dx.doi.org/10.1117/12.175264.

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9

Anfinrud, P. A., T. P. Causgrove, and W. S. Struve. "Optical Pump-Probe Spectroscopy of Dyes on Surfaces: Ground-State Recovery of Rhodamine 640 on ZnO and Fused Quartz." In International Conference on Ultrafast Phenomena. Optica Publishing Group, 1986. http://dx.doi.org/10.1364/up.1986.we4.

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In recent years, time-resolved fluorescence spectroscopy has been investigated for dyes adsorbed onto fused quartz [1] and semiconductors [2,3]. On quartz, the monomer fluorescence dynamics are nonexponential and tend to dominated by excitation trapping by dye aggregates; the phenomenological lifetime measured in the limit of low coverage is often comparable to the fluorescence lifetime observed in solution [1]. On ultraviolet-bandgap semiconductors like TiO2, much more rapid fluorescence decay is typically found [2,3], even at low coverage. The channel responsible for this accelerated decay o

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10

"Semiconductors. Optics." In Proceedings of the Conference “Kadanoff-Baym Equations: Progress and Perspectives for Many-Body Physics”. WORLD SCIENTIFIC, 2000. http://dx.doi.org/10.1142/9789812793812_others04.

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Звіти організацій з теми "Semiconductors"

1

Hunt, Will, Saif Khan, and Dahlia Peterson. China’s Progress in Semiconductor Manufacturing Equipment. Center for Security and Emerging Technology, 2021. http://dx.doi.org/10.51593/20190018.

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To reduce its dependence on the United States and its allies for semiconductors, China is building domestic semiconductor manufacturing facilities by importing U.S., Japanese, and Dutch semiconductor manufacturing equipment. In the longer term, it also hopes to indigenize this equipment to replace imports. U.S. and allied policy responses to China’s efforts will significantly affect its prospects for success in this challenging task.

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2

Khan, Saif M. U.S. Semiconductor Exports to China: Current Policies and Trends. Center for Security and Emerging Technology, 2020. http://dx.doi.org/10.51593/20200039.

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The United States has long used export controls to prevent the proliferation of advanced semiconductors and the inputs necessary to produce them. With Beijing building up its own chipmaking industry, the United States has begun tightening restrictions on exports of semiconductor manufacturing equipment to China. This brief provides an overview of U.S. semiconductor export control policies and analyzes the impacts of those policies on U.S.-China trade.

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3

Pasupuleti, Murali Krishna. 2D Quantum Materials for Next-Gen Semiconductor Innovation. National Education Services, 2025. https://doi.org/10.62311/nesx/rrvi425.

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Abstract The emergence of two-dimensional (2D) quantum materials is revolutionizing next-generation semiconductor technology, offering superior electronic, optical, and quantum properties compared to traditional silicon-based materials. 2D materials, such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (hBN), and black phosphorus, exhibit high carrier mobility, tunable bandgaps, exceptional mechanical flexibility, and strong light-matter interactions, making them ideal candidates for ultra-fast transistors, spintronics, optoelectronic devices, and quantum computin

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4

Khan, Saif M., Alexander Mann, and Dahlia Peterson. The Semiconductor Supply Chain: Assessing National Competitiveness. Center for Security and Emerging Technology, 2021. http://dx.doi.org/10.51593/20190016.

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Semiconductors are a key component in fueling scientific progress, promoting economic advancement, and ensuring national security. This issue brief summarizes each component of the semiconductor supply chain and where the United States and its allies possess the greatest leverage. A related policy brief, “Securing Semiconductor Supply Chains,” recommends policy actions to ensure the United States maintains this leverage and uses it to promote the beneficial use of emerging technologies, such as artificial intelligence.

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Crawford, M. H., W. W. Chow, A. F. Wright, et al. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/5901.

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Lazonick, William, and Matt Hopkins. Why the CHIPS Are Down: Stock Buybacks and Subsidies in the U.S. Semiconductor Industry. Institute for New Economic Thinking Working Paper Series, 2021. http://dx.doi.org/10.36687/inetwp165.

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The Semiconductor Industry Association (SIA) is promoting the Creating Helpful Incentives to Produce Semiconductors (CHIPS) for America Act, introduced in Congress in June 2020. An SIA press release describes the bill as “bipartisan legislation that would invest tens of billions of dollars in semiconductor manufacturing incentives and research initiatives over the next 5-10 years to strengthen and sustain American leadership in chip technology, which is essential to our country’s economy and national security.” On June 8, 2021, the Senate approved $52 billion for the CHIPS for America Act, ded

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Chinthavali, M. S. Wide-Bandgap Semiconductors. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/886008.

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Brown, Gail J. Quantum Confined Semiconductors. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ada614123.

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Pasupuleti, Murali Krishna. Quantum Semiconductors for Scalable and Fault-Tolerant Computing. National Education Services, 2025. https://doi.org/10.62311/nesx/rr825.

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Abstract: Quantum semiconductors are revolutionizing computing by enabling scalable, fault-tolerant quantum processors that overcome the limitations of classical computing. As quantum technologies advance, superconducting qubits, silicon spin qubits, topological qubits, and hybrid quantum-classical architectures are emerging as key solutions for achieving high-fidelity quantum operations and long-term coherence. This research explores the materials, device engineering, and fabrication challenges associated with quantum semiconductors, focusing on quantum error correction, cryogenic control sys

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Jonscher, Andrew K., and Mohammad A. Bari. Dielectric Spectroscopy of Semiconductors. Defense Technical Information Center, 1988. http://dx.doi.org/10.21236/ada203457.

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