Готові списки джерел за темами / Semiconductors II-VI

Добірка наукової літератури з теми "Semiconductors II-VI"

Автор: Grafiati
Опубліковано: 8 липня 2022

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Зміст

  1. Статті в журналах
  2. Дисертації
  3. Книги
  4. Частини книг
  5. Тези доповідей конференцій
  6. Звіти організацій

Статті в журналах з теми "Semiconductors II-VI":

1

Dietl, Tomasz, and Hideo Ohno. "Ferromagnetic III–V and II–VI Semiconductors." MRS Bulletin 28, no. 10 (October 2003): 714–19. http://dx.doi.org/10.1557/mrs2003.211.

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AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.
2

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (July 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible spectrum.During the past thirty years or so, development of the narrower gap III-V compound semiconductors, such as gallium arsenide and related III-V alloys, has progressed quite rapidly. A striking example of the current maturity reached by the III-V semiconductor materials is the infrared semiconductor laser that provides the optical source for fiber communication links and compact-disk players. Despite the fact that the direct bandgap II-VI semiconductors offered the most promise for realizing diode lasers and efficient light-emitting-diode (LED) displays over the green and blue portions of the visible spectrum, major obstacles soon emerged with these materials, broadly defined in terms of the structural and electronic quality of the material. As a result of these persistent problems, by the late 1970s the II-VI semiconductors were largely relegated to academic research among a small community of workers, primarily in university research laboratories.
3

Miles, R. H., J. O. McCaldin, and T. C. McGill. "Superlattices of II–VI semiconductors." Journal of Crystal Growth 85, no. 1-2 (November 1987): 188–93. http://dx.doi.org/10.1016/0022-0248(87)90221-1.

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4

Akimoto, K., H. Okuyama, M. Ikeda, and Y. Mori. "Isoelectronic oxygen in II‐VI semiconductors." Applied Physics Letters 60, no. 1 (January 6, 1992): 91–93. http://dx.doi.org/10.1063/1.107385.

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5

Twardowski, A. "Cr-Based II-VI Semimagnetic Semiconductors." Acta Physica Polonica A 87, no. 1 (January 1995): 85–93. http://dx.doi.org/10.12693/aphyspola.87.85.

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6

Kalt, H., S. Wachter, D. Lüerssen, and J. Hoffmann. "Ultrafast Phenomena in II-VI Semiconductors." Acta Physica Polonica A 94, no. 2 (August 1998): 139–46. http://dx.doi.org/10.12693/aphyspola.94.139.

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7

Gunshor, Robert L., Masakazu Kobayashi, and Arto V. Nurmikko. "II – VI semiconductors come of age." Physics World 5, no. 3 (March 1992): 46–49. http://dx.doi.org/10.1088/2058-7058/5/3/31.

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8

Mycielski, A., L. Kowalczyk, R. R. Gałązka, Roman Sobolewski, D. Wang, A. Burger, M. Sowińska, et al. "Applications of II–VI semimagnetic semiconductors." Journal of Alloys and Compounds 423, no. 1-2 (October 2006): 163–68. http://dx.doi.org/10.1016/j.jallcom.2005.12.116.

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9

Razbirin, B. S., D. K. Nel'son, J. Erland, K. H. Pantke, V. G. Lyssenko, and J. M. Hvan. "Bound biexcitons in II–VI semiconductors." Solid State Communications 93, no. 1 (January 1995): 65–70. http://dx.doi.org/10.1016/0038-1098(94)00543-5.

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10

Sohn, S. H., D. G. Hyun, M. Noma, S. Hosomi, and Y. Hamakawa. "Effective charges in II–VI semiconductors." Journal of Crystal Growth 117, no. 1-4 (February 1992): 907–12. http://dx.doi.org/10.1016/0022-0248(92)90882-j.

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Статті в журналах Дисертації Книги

Дисертації з теми "Semiconductors II-VI":

1

Claybourn, M. "Transient spectroscopy of II-VI semiconductors." Thesis, Durham University, 1985. http://etheses.dur.ac.uk/9298/.

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DLTS, ODLTS and DLOS have been used to characterise the main deep level trapping centres in some II-VI semiconductors; these were single crystal CdS, (ZnCd)S, CdSe, CdTe and ZnS, and polycrystalline CdS films. Undoped, single crystal CdS contained four electron traps as detected by DLTS, at 0.29eV, 0.41eV, 0.61eV and 0.74eV below the conduction band (CB). The first two were observed in all samples and were due to native defects. The two states of highest energy were found only in material that had been annealed in S or Cd vapours. The 0.61ev level could be photoinduced by illumination at photon energies greater than about 1eV. It decayed in the dark with an activation energy of 0.25eV. The 0.61eV and 0.74eV centres were associated with electrically active extended defects (subgrain boundaries Such samples had dislocation densities of about 10(^10) cm(^-2). Copper was found to be a residual impurity in CdS. It produced two deep hole traps resulting from a crystal field splitting of the Cu d(^9) state. They were detected by ODLTS and DLOS and were found at 0.35eV and 1.lev above the valence band (VB).Introduction of the isoelectronic impurity tellurium into CdS induced a hole repulsive centre at 0.21eV above the VB. This is thought to be an inportant radiative recombination centre. The main electron trap in CdS at 0.41eV was found to shift to higher energy with incorporation of Zn. Replacement of 20% of the Cd with Zn shifted the energy to 0.63eV. The level appeared fixed to the VB and had a similar functional dependence on composition as the band gap. The activation energies of the copper centres observed in CdS remained unchanged with incorporation of Zn up to the composition (^Zn)0.45 (^cd)0.55(^s) showed that the crystal field splitting was constant and that these levels were also pinned to the VB. During the fabrication process of the (ZnCd)S/Cu(_2)S solar cell, a deep level was induced at about 1.2eV below the CB. This is thought to be a recombination centre and one of the contributory factors to the reduction observed in the current collection efficiency of these devices. Polycrystalline CdS films were prepared by silk screen printing (SP) and evaporation. The SP films were annealed at various times and temperatures to improve the crystallinity of the layers. At 640C for 1hr, deep states at 0.16eV and 0.48eV were detected. The levels disappeared when annealed at 670C-700C and a new level was observed at 0.13eV. CdS/Cu(_2)S heterojunctions were prepared on the material sintered at 670C; this induced a further trapping level at 1.1eV and one that was poorly resolved. Copper diffused into the CdS during the fabrication of the device so the states associated with copper were detected at 0.35eV and 1.1eV, The evaporated CdS layers showed that the defect signature was sensitive to the type of substrate. Using Ag instead of the usual SnO(_x), deep states were induced at 0.48eV and 0.98eV below the CB. These Ag-associated impurity centres prevent the indiffusion of Cu during the optimising heat treatment of the CdS/Cu(_2)S heterojunction. This maintains the stoichicmetry of the Cu(_2)S layer, thereby, preventing degradation of the devices. CdSe and copper doped CdSe were found to contain several important defect centres: a native sensitising centre (0.64eV from the VB), a class I recombination centre (0.9eV from the CB), a copper impurity centre (0.2eV from the CB) and two native defects (0.16eVand 0.45eV from the CB). n-type CdTe grown by the Piper-Polich technique contained6 electron traps at 0.15eV, 0.21eV, 0.40eV, 0.47eV, 0.53eV and 0.63eV. Their presence was shown to be dependent upon the method of growth of the crystal by comparing with material grown by other techniques. One or more of these states were thought to be due to extended defects or Te precipitates. Low resistivity ZnS contained two deep electron traps at 0.25eV and O.50eV as detected by DLTS. In addition DLOS showed the presence of four further states at 1.25eV, 1.37eV, 1.89eV and 2.19eV below the CB. The first two are thought to be the strong luminescence centres observed by other workers.
2

Boyce, Paul John. "Raman spectroscopy of II-VI semiconductors." Thesis, University of East Anglia, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357210.

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3

Wasenczuk, Adam. "Defects in epitaxial II-VI semiconductors." Thesis, University of Southampton, 1998. https://eprints.soton.ac.uk/426603/.

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4

Milnes, James. "The piezoelectric effect in II-VI semiconductors." Thesis, Heriot-Watt University, 1999. http://hdl.handle.net/10399/617.

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5

Luo, Ming. "Transition-metal ions in II-VI semiconductors ZnSe and ZnTe /." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4630.

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Thesis (Ph. D.)--West Virginia University, 2006.
Title from document title page. Document formatted into pages; contains xiv, 141 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 135-141).
6

Meredith, Wyn. "II-VI blue emitting lasers and VCSELs." Thesis, Heriot-Watt University, 1997. http://hdl.handle.net/10399/695.

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7

Cairns, John William. "The interfaces of II-VI/III-V semiconductors." Thesis, Cardiff University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296381.

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8

Gabriel, Tim. "The electrodeposition of mesoporous type II-VI semiconductors." Thesis, University of Southampton, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438733.

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9

Stevens, Christopher John. "Time-resolved spectroscopy of excitons in II-VI heterostructures." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308909.

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10

McNamee, Michael Jonathan. "Optical studies of electronic excitations in II-VI semiconductors." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359471.

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Книги з теми "Semiconductors II-VI":

1

Boyce, Paul John. Raman spectroscopy of II-VI semiconductors. Norwich: University of East Anglia, 1992.

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2

Bhargava, Rameshwar. Properties of wide bandgap II-VI semiconductors. London, U.K: IEE, INSPEC, 2006.

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3

Adachi, Sadao. Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Chichester, West Sussex, U.K: Wiley, 2009.

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4

Adachi, Sadao. Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Chichester, West Sussex, U.K: Wiley, 2009.

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5

International Conference on II-VI Compounds (4th 1989 Berlin). II-VI compounds 1989: Proceedings of the Fourth International Conference on II-VI Compounds, Berlin (West), 17-22 September 1989. Amsterdam: North-Holland, 1990.

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6

International Conference on II-VI Compounds (4th 1989 Berlin). II-VI compounds 1989: Proceedings of the Fourth International Conference on II-VI Compounds, Berlin (West), 17-22 September 1989. Amsterdam: North-Holland, 1990.

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7

International, Conference on II-VI Compounds (5th 1991 Okayama Japan). II-VI compounds 1991: Proceedings of the Fifth International Conference on II-VI Compounds, Tamano, Okayama, Japan, 8-13 September 1991. Amsterdam: North-Holland, 1992.

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8

International Conference on II-VI Compounds (5th 1991 Okayama, Japan). II-VI compounds 1991: Proceedings of the Fifth International Conference on II-VI Compounds, Tamano, Okayama, Japan, 8-13 September 1991. Amsterdam: North-Holland, 1992.

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9

International Conference on II-VI Compounds (9th 1999 Kyoto, Japan). II-VI compounds 1999: Proceedings of the Ninth International Conference on II-VI Compounds, Kyoto, Japan, 1-5 November 1999. Amsterdam: Elsevier, 2000.

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10

International Conference on II-VI Compounds (9th 1999 Kyoto, Japan). II-VI compounds 1999: Proceedings of the Ninth International Conference on II-VI Compounds, Kyoto, Japan, 1-5 November 1999. Amsterdam: Elsevier, 2000.

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Частини книг з теми "Semiconductors II-VI":

1

Krishnan, Bindu, Sadasivan Shaji, M. C. Acosta-Enríquez, E. B. Acosta-Enríquez, R. Castillo-Ortega, MA E. Zayas, S. J. Castillo, et al. "Group II–VI Semiconductors." In Semiconductors, 397–464. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-02171-9_7.

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2

Madelung, Otfried. "II-VI compounds." In Semiconductors: Data Handbook, 173–244. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18865-7_4.

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3

Benoit à la Guillaume, C. "II-Fe-VI Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 191–208. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_8.

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4

Kulkarni, S. K., Manisha Kundu, and Pramod Borse. "Nanoparticles of II — VI Semiconductors." In Frontiers in Materials Modelling and Design, 236–43. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-80478-6_24.

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5

Gunshor, Robert L., and Arto V. Nurmikko. "The Wide Bandgap II-VI Semiconductors." In Materials for Optoelectronics, 207–36. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1317-5_8.

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6

Capper, Peter. "Narrow-Bandgap II–VI Semiconductors: Growth." In Springer Handbook of Electronic and Photonic Materials, 303–24. Boston, MA: Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_15.

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7

Capper, Peter. "Narrow Bandgap II-VI Semiconductors: Growth." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_15.

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8

Baker, Ian M. "II-VI Narrow Bandgap Semiconductors: Optoelectronics." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_34.

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9

Heald, Steve M. "Magnetic Ions in Group II–VI Semiconductors." In Springer Series in Optical Sciences, 339–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-662-44362-0_16.

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10

Baker, Ian. "II–VI Narrow-Bandgap Semiconductors for Optoelectronics." In Springer Handbook of Electronic and Photonic Materials, 855–85. Boston, MA: Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_36.

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Тези доповідей конференцій з теми "Semiconductors II-VI":

1

Schaake, Herbert F. "TEM Characterization of II-VI Compound Semiconductors." In 1988 Semiconductor Symposium, edited by Orest J. Glembocki, Fred H. Pollak, and Fernando A. Ponce. SPIE, 1988. http://dx.doi.org/10.1117/12.947430.

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2

Mullin, John B., D. J. Cole-Hamilton, A. E. D. McQueen, and J. E. Hails. "Developments in precursors for II-VI semiconductors." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24354.

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3

Tomashik, V. N., V. I. Grytsiv, Z. F. Tomashik, and O. V. Seritsan. "Interaction of II-VI, III-VI and IV-VI group semiconductors with metals." In Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov and Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280466.

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4

Zogg, Hans, A. N. Tiwari, Stefan Blunier, Clau Maissen, and Jiri Masek. "Heteroepitaxy of II-VI and IV-VI semiconductors on Si substrates." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24409.

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5

de León, J. Mustre. "Photoinduced local lattice distortions in II-VI semiconductors." In Physics in local lattice distortions. AIP, 2001. http://dx.doi.org/10.1063/1.1363094.

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6

Kar, Ajoy K., and A. Tookey. "Ultrafast coherent spectroscopy in II-VI widegap semiconductors." In Selected Papers from the International Conference on Optics and Optoelectronics, edited by Kehar Singh, Om P. Nijhawan, Arun K. Gupta, and A. K. Musla. SPIE, 1999. http://dx.doi.org/10.1117/12.346781.

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7

Glass, A. M., R. D. Feldman, D. W. Kisker, P. M. Bridenbaugh, and P. M. Mankiewich. "Low Temperature Epitaxial Growth of II-VI Semiconductors." In 1986 International Symposium/Innsbruck, edited by Jean Besson. SPIE, 1986. http://dx.doi.org/10.1117/12.938551.

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8

Hvam, Jorn M., Claus Doernfeld, and Colin R. Paton. "Coherent nonlinear optical resonances in II-VI semiconductors." In OE/LASE '90, 14-19 Jan., Los Angeles, CA, edited by Nasser Peyghambarian. SPIE, 1990. http://dx.doi.org/10.1117/12.18121.

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9

Perrier, Gerard. "Close-spaced vapor transport of II-VI semiconductors." In San Diego, '91, San Diego, CA, edited by Carl M. Lampert and Claes G. Granqvist. SPIE, 1991. http://dx.doi.org/10.1117/12.49228.

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10

Nurmikko, Arto V., and Robert L. Gunshor. "Quantum-confined structures and lasers in II-VI semiconductors in the blue-green." In Semiconductors '92, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1992. http://dx.doi.org/10.1117/12.137611.

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Звіти організацій з теми "Semiconductors II-VI":

1

Bhat, Ishwara B. Epitaxial Lateral Overgrowth of II-VI Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, February 2001. http://dx.doi.org/10.21236/ada389229.

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2

Zhang, Yong-Hang. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, August 2015. http://dx.doi.org/10.21236/ada622826.

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3

Kelley, David F. Charge separation sensitized by advanced II-VI semiconductor nanostructures. Office of Scientific and Technical Information (OSTI), April 2017. http://dx.doi.org/10.2172/1350954.

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Girndt, A., F. Jahnke, A. Knorr, S. W. Koch, and W. W. Chow. Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/486170.

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Semendy, Fred, Neal Bambha, Marie C. Tamargo, A. Cavus, and L. Zeng. Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP. Fort Belvoir, VA: Defense Technical Information Center, October 1999. http://dx.doi.org/10.21236/ada372188.

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Metzger, Wyatt K. Photovoltaic Cells Employing Group II-VI Compound Semiconductor Active Layers: Cooperative Research and Development Final Report, CRADA Number CRD-09-325. Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1475129.

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