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Дисертації з теми "Semiconductors"

Автор: Grafiati

Опубліковано: 4 червня 2021

Оновлено: 25 липня 2025

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1

Hong, Sang Jeen. "Real-time malfunction diagnosis and prognosis of reactive ion etching using neural networks." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180227/unrestricted/hong%5Fsang%5Fj%5F200312%5Fphd.pdf.

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2

Liu, Jia. "Optical spectroscopic study of GaAs with dilute nitrogen doping /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20LIU.

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3

Park, Seung-Han. "Excitonic optical nonlinearities in semiconductors and semiconductor microstructures." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184551.

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This dissertation describes the study of excitonic optical nonlinearities in semiconductors and semiconductor microstructures. The main emphasis is placed on the evolution of optical nonlinearities as one goes from bulk to quantum-confined structures. Included are experimental studies of molecular-beam-epitaxially-grown bulk GaAs and ZnSe, GaAs/AlGaAs multiple-Quantum-Wells (MQW's), and finally, quantum-confined CdSe-doped glasses. The microscopic origins and magnitudes of the optical nonlinearities of bulk GaAs and ZnSe were investigated and the exciton recovery time in ZnSe was measured. A c

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4

Mardikar, Yogesh Mukesh. "Energy analysis, diagnostics, and conservation in semiconductor manufacturing." Morgantown, W. Va. : [West Virginia University Libraries], 2004. https://etd.wvu.edu/etd/controller.jsp?moduleName=documentdata&jsp%5FetdId=3748.

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Анотація:

Thesis (M.S.)--West Virginia University, 2004.<br>Title from document title page. Document formatted into pages; contains viii, 152 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 106-108).

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5

Ramamurthi, Vikram. "Analysis of production control methods for semiconductor research and development fabs using simulation /." Link to online version, 2004. https://ritdml.rit.edu/dspace/handle/1850/938.

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6

Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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7

Newson, D. J. "Electronic transport in III-V semiconductors and semiconductor devices." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382242.

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8

Calhoun, Kenneth Harold. "Thin film compound semiconductor devices for photonic interconnects." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/15478.

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9

Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /." Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.

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10

Peng, Harry W. "The effects of stress on gallium arsenide device characteristics." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/28584.

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Анотація:

For VLSI applications, it is essential to have consistent device characteristics for devices fabricated on different fabrication runs, on different wafers, and especially across a single wafer. MESFETs fabricated on GaAs have been found to have an orientation dependence in their threshold voltage and other characteristics. For MESFETs with gate length less than 2 μm, changing the device orientation can so significantly alter the device characteristics that it must be considered during the transistor design stage. The causes for the orientation dependence in the device characteristics have been

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11

Erwin. "Electron eigenvalues and eigenfunctions for a nanochannel with a finite rectangular barrier." Virtual Press, 1994. http://liblink.bsu.edu/uhtbin/catkey/917032.

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Electron scattering by a single or multiple impurities affects the quantizaton of conductance of a semiconductor nanochannel. The theoretical model of electron transport in a hardwall nanostructure with an impurity requires an analysis of the electronic transverse energy levels, eigenfunctions and hopping integrals resulting from cross channel or transverse confinement. Theoretical equations for the electronic transverse energy levels, wavefunctions and hopping integrals in the case of a repulsive, finite strength rectangular barrier arbitrarily positioned in the nanochannel are presented. The

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12

Mahadavan, Malina. "Analytical aspects of metal semiconductor barriers based on organic semiconductors." Thesis, University of Liverpool, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490804.

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Over recent years, research into organic semiconductors has intensified considerably due to the increasing commercial viability of inexpensive, flexible, large area electronic applications. In particular, the introduction of a new generation of small molecule based organic semiconductors has increased the possibility of achieving high field effect mobilities. So far pentacene seems to be the most promising candidate since it yields field effect mobilities that are comparable to that of hydrogenated amorphous silicon (a-Si:H). Recently, a mobility larger than 1.2 cm2y-fs-l and an on/off ratio g

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13

Halindintwali, Sylvain. "A study of hydrogenated nanocrystalline silicon thin films deposited by hot-wire chemical vapour deposition (HWCVD)." Thesis, University of the Western Cape, 2005. http://etd.uwc.ac.za/index.php?module=etd&amp.

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In this thesis, intrinsic hydrogenated nanocrystalline silicon thin films for solar cells application have been deposited by means of the hot &ndash<br>wire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that&nbsp<br>hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties.<br

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14

Modi, Nihar Triplett Gregory Edward. "Thermal management in GaAs/AlGaAs laser diode structures." Diss., Columbia, Mo. : University of Missouri--Columbia, 2007. http://hdl.handle.net/10355/6262.

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Анотація:

Title from PDF of title page (University of Missouri--Columbia, viewed on Feb. 16, 2010). The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file. Thesis supervisor: Dr. Gregory Triplett. Includes bibliographical references.

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15

Johnson, William A. "What constitutes national security in the semiconductor industry? a look at the competing views surrounding DoD's support of semiconductuors /." Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA241699.

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Thesis (M.S. in Financial Management)--Naval Postgraduate School, December 1990.<br>Thesis Advisor(s): Gates, William. Second Reader: Terasawa, Katsuaki. "December 1990." Description based on title screen as viewed on March 31, 2010. DTIC Identifier(s): Semiconductor Industry, Budgets, Department Of Defense, Theses. Author(s) subject terms: Semiconductors, National Security, Federal Economic Intervention. Includes bibliographical references (p. 69-71). Also available in print.

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16

OLBRIGHT, GREGORY RICHARD. "FEMTOSECOND DYNAMICS AND NONLINEAR EFFECTS OF ELECTRON-HOLE PLASMA IN SEMICONDUCTOR DOPED GLASSES." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184091.

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The following is a comprehensive study of transient and steady-state nonlinear optical properties of semiconductor microcrystals embedded in a glass matrix (semiconductor doped glass). Transient thermal effects which give rise to longitudinal excitation discontinuities (i.e., kinks) that arise from partial sample switching in increasing absorption optical bistability are observed in a doped glass. The transient thermal effects occur on time scales of a few hundred milliseconds. Femtosecond and nanosecond laser pulses are employed to measure time-resolved and steady-state transmission and diffe

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17

Reig, Canyelles Marta. "Carbazole-Based Materials for Organic Thin-Film Transistors and Organic Light-Emitting Diodes." Doctoral thesis, Universitat de Barcelona, 2017. http://hdl.handle.net/10803/404560.

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This thesis deals with the preparation and characterization of novel organic semiconductors based on the carbazole heterocycle for electronic and optoelectronic applications, specifically to be studied as active layers in OTFTs and as emitting layers in OLEDs. Carbazole-based materials are recognised for their high thermal stability, high emission efficiencies and excellent hole-transporting properties associated to its electron-donating ability, which make of them promising candidates for OTFTs and OLEDs applications. OLEDs have been studied extensively due to their promising applications i

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18

Zhao, Shen. "Propriétés optiques de nanorubans et boites quantiques de graphène." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLN032/document.

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Ce manuscrit présente une étude expérimentale sur les propriétés optiques des nanorubans de graphène (acronyme anglais : GNRs) et des boites quantiques de graphène (acronyme anglais : GQDs) synthétisés par la chimie ascendante.Pour la partie sur les GNRs, les spectres d'absorption et de photoluminescence ainsi que les mesures de la durée de vie sur la dispersion impliquent la formation d'états excimères résultant de l'agrégation des GNRs. Au moyen de la microscopie confocale et de la microscopie à force atomique, nous observons l'émission de petits agrégats de GNRs confirmant leur capacité à é

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19

Wu, Kehuey. "Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET /." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.

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20

Archer, Paul I. "Building on the hot-injection architecture : giving worth to alternative nanocrystal syntheses /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8520.

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21

Isaev, Leonid. "Spontaneous polarization effects in nanoscale systems based on narrow-gap semiconductors." Virtual Press, 2005. http://liblink.bsu.edu/uhtbin/catkey/1328116.

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In the framework of the two-band (Dirac) model, we analyze the electronic structure of nanoscale systems, based on narrow-gap semiconductors of Pb,_xSnx (Se, S) type. Themain attention is paid to the influence of properties of the surface, encoded in appropriate boundary conditions, on the size-quantized spectrum. From this point of view we consider two types of systems: spherical (quantum dots) and quasi one-dimensional (films).It is shown that the spectrum of the spherical quantum dot consists not only of usual size-quantized states, located above the gap edge, but also surface modes residin

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22

Tran, Lien. "InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://dx.doi.org/10.18452/16334.

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Im Rahmen dieser Arbeit wurden InSb- und verdünnt-magnetische In_{1-x}Mn_xSb Filme mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und elektronische Eigenschaften untersucht. Die 2 μm InSb-Dünnschichten wurden sowohl auf GaAs(001)-Substrat als auch um 4° in Richtung [110] fehlgeschnittenem Si(001)-Substrat hergestellt. Optimierte InSb-Schichten direkt auf GaAs zeigen eine hohe kristalline Qualität, niedriges Rauschen und eine Elektronenbeweglichkeit von 41100 cm^2/Vs bei 300 K. Die Ladungsträgerkonzentration beträgt etwa 2,9e16 cm^{-3}. Um InSb-Dünnschichten gu

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23

Oliva, Vidal Robert. "High-pressure optical and vibrational properties of InN and InGaN." Doctoral thesis, Universitat de Barcelona, 2016. http://hdl.handle.net/10803/400490.

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This thesis is devoted to the study of the optical and vibrational properties of indium nitride (InN) and indium gallium nitride (InGaN) at room and high-pressure conditions. For this purpose, we have employed spectroscopic tools such as absorption spectroscopy or Raman scattering in order to investigate a series of InN and InGaN thin films grown with different methods and on different substrates. For the high-pressure measurements, we have employed the diamond anvil cell technique. High-pressure optical absorption experiments on InN epilayers have allowed us to observe the direct-to-indire

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24

Cole, Eric D. "On the feasibility and application of optical p to n inversion." Thesis, Virginia Tech, 1985. http://hdl.handle.net/10919/45719.

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The feasibility of achieving carrier inversion of a properly doped crystal via optical excitation is studied. This process involves a host substrate doped with deep donors for n-type light characteristic and compensated by a shallow acceptor for p-type characteristic in the dark. This substrate is analyzed using well-known semiconductor equations. In addition conditions which must exist for carrier inversion are also specified. The solutions found are applied to a realistic set of dopants for illustrative purposes as well as indication of feasibility range. This inversion technique may possibl

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25

Pyke, Daniel James. "Hydrogen evolution and transport in semiconductors." Phd thesis, Canberra, ACT : The Australian National University, 2014. http://hdl.handle.net/1885/125142.

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Silicon-on-insulator structures are used for the fabrication of integrated electronic circuits, photonic devices and structures, and micro-electro-mechanical systems. The most common fabrication method for SOI is a hydrogen-induced cleavage technique in which ion-implanted hydrogen is employed to initiate and propagate cracks in a plane parallel to the silicon surface. Considerable research effort has been devoted to understanding this cleavage technique in (100) silicon but several fundamental issues remain unclear, including the role of stress on hydrogen platelet alignment. In addition, the

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26

Mashigo, Donald. "Raman spectroscopy of ternary III-V semiconducting films." Thesis, Nelson Mandela Metropolitan University, 2009. http://hdl.handle.net/10948/1011.

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The III-V semiconductor compounds (i.e. In Ga As x 1-x , 1 x x InAs Sb - , In Ga Sb x 1-x and Al Ga As x 1-x ) have been studied using room temperature Raman spectroscopy. X-ray diffraction has been used as a complementary characterization technique. In this study all the III-V semiconductor compounds were grown by metal organic chemical vapour deposition (MOCVD) on GaAs and GaSb substrates. The layers were studied with respect to composition, strain variation and critical thickness. Raman spectroscopy has been employed to assess the composition dependence of optical phonons in the layers. The

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27

Krishnamurthy, Nicole Andrea. "Mixed material integration for high speed applications." Diss., Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/14684.

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28

Sun, Yunlong. "Laser processing optimization for semiconductor based devices /." Full text open access at:, 1997. http://content.ohsu.edu/u?/etd,3.

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29

Kelkar, Kapil S. "Semiconductor modeling for multi-layer, high field photo switch using sub-bandgap photons /." free to MU campus, to others for purchase, 2004. http://wwwlib.umi.com/cr/mo/fullcit?p1421147.

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30

Daniels-Hafer, Carrie Lynn. "Electrochemical tuning of charge transport at inorganic semiconductor doped conjugated polymer interfaces through manipulation of electrochemical potential /." view abstract or download file of text, 2004.

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Анотація:

Thesis (Ph. D.)--University of Oregon, 2004.<br>Typescript. Includes vita and abstract. Includes bibliographical references (leaves 185-196). Also available for download via the World Wide Web; free to University of Oregon users.

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31

Li, Bin. "Electrical bistability in organic semiconductors and spin injection using organic magnetic semiconductor." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1334864514.

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32

Los, Andrei. "Influence of carrier freeze-out on SiC Schottky junction admittance." Diss., Mississippi State : Mississippi State University, 2001. http://library.msstate.edu/etd/show.asp?etd=etd-03272001-120540.

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33

Sankin, Igor. "Edge termination and RESURF technology in power silicon carbide devices." Diss., Mississippi State : Mississippi State University, 2006. http://library.msstate.edu/etd/show.asp?etd=etd-12162005-141206.

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34

Nayak, Rekha R. "Dimensionally confined semiconductors." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311992.

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35

Bigger, James R. K. "Dislocations in semiconductors." Thesis, University of Oxford, 1992. http://ora.ox.ac.uk/objects/uuid:2be9288d-caee-4070-b535-b8fc6406b4d1.

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A set of codes with 3D periodic boundary conditions has been developed to model dislocations in semiconductors. Several schemes have been used to investigate the atomic structure of dislocations; classical potentials incorporated in a Molecular Dynamics framework, a tightbinding k-space scheme and ab initio pseudopotential codes developed at Cambridge and Edinburgh. An error has been detected in previous work that modelled dislocations using periodic boundary conditions. It is demonstrated, for the 90° and 30° Shockley partials, that a mismatch at the periodic boundaries leads to erroneous ato

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36

Hodgson, Michael John. "Bonding in semiconductors." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240971.

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37

Baklar, Mohammed Adnan. "Processing organic semiconductors." Thesis, Queen Mary, University of London, 2010. http://qmro.qmul.ac.uk/xmlui/handle/123456789/1311.

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In recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light-emitting diodes (OLEDs) and organic photovoltaics (OPVs). Promisingly, improved electronic performance and device structures have been realized with e.g. OLEDs entering the market and organic field-effect transistors (OFETs) reaching the performance of amorphous silicon devices; however, it would be too early to state that the field of organic semi

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38

Durandurdu, Murat. "Polyamorphism in Semiconductors." Ohio University / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1040060243.

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39

Mahadik, Nadeemullah A. "Non-destructive x-ray characterization of wide-bandgap semiconductor materials and device structures." Fairfax, VA : George Mason University, 2008. http://hdl.handle.net/1920/3404.

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Анотація:

Thesis (Ph.D.)--George Mason University, 2008.<br>Vita: p. 104. Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Title from PDF t.p. (viewed Mar. 17, 2009). Includes bibliographical references (p. 99-103). Also issued in print.

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40

Cornet, i. Calveras Albert. "Estudio por medio de espectroscopia picosegundo de los compuestos II-VI sometidos a fuerte excitación óptica." Doctoral thesis, Universitat de Barcelona, 1987. http://hdl.handle.net/10803/665808.

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En la pasada década, se han observado nuevas bandas de luminescencia en los semiconductores cuando son excitados fuertemente por medio de láseres (fotoexcitacion). La interpretación del origen de estas bandas era variado y ha sido objeto de controversias y discusiones entre los diferentes autores. Finalmente, por medio de experiencias complementarias (efecto Raman, scattering con luz I.R., espectroscopia de excitación, fotoconducción)) se ha probado que en CuCl tiene lugar la formación de moleculas biexcitónicas y que en Ge y en Si, las altas excitaciones producen un plasma electrón-huec

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41

Randell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

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42

Farner, William Robert. "On-chip probe metrology /." Online version of thesis, 2008. http://hdl.handle.net/1850/6207.

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43

Chan, Wan Tim. "CMOS-compatible zero-mask one time programmable (OTP) memory design /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20CHANW.

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44

West, Matthew K. "Diffusion of sulfur into natural diamond : characterization and applications in radiation detection /." free to MU campus, to others for purchase, 1999. http://wwwlib.umi.com/cr/mo/fullcit?p9964011.

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45

Bode, Christopher Allen. "Run-to-run control of overlay and linewidth in semiconductor manufacturing." Digital version:, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3008281.

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46

Radovanovic, Pavle V. "Synthesis, spectroscopy, and magnetism of diluted magnetic semiconductor nanocrystals /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/8494.

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47

Yoo, Jung-Woo. "Multiple photonic response in organic-based magnetic semiconductor." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1167406887.

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48

Luo, Ming. "Transition-metal ions in II-VI semiconductors ZnSe and ZnTe /." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4630.

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Анотація:

Thesis (Ph. D.)--West Virginia University, 2006.<br>Title from document title page. Document formatted into pages; contains xiv, 141 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 135-141).

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49

Stoica, Vladimir A. "Optical characterization of compound semiconductors using photoconductivity and photoreflectance." Morgantown, W. Va. : [West Virginia University Libraries], 2000. http://etd.wvu.edu/templates/showETD.cfm?recnum=1468.

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Анотація:

Thesis (M.S.)--West Virginia University, 2000.<br>Title from document title page. Document formatted into pages; contains iv, 68 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 67-68).

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50

Ward, Martin B. "Squeezed light in semiconductors." Thesis, University of Oxford, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.270175.

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