Готові списки джерел за темами / Single-crystal layers

Зміст

  1. Статті в журналах
  2. Дисертації
  3. Частини книг
  4. Тези доповідей конференцій
  5. Звіти організацій

Добірка наукової літератури з теми "Single-crystal layers"

Автор: Grafiati
Опубліковано: 3 червня 2025
Оновлено: 31 липня 2025

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Статті в журналах з теми "Single-crystal layers"

1

HIBINO, H., and T. OGINO. "Si TWINNING SUPERLATTICE: GROWTH OF NEW SINGLE CRYSTAL Si." Surface Review and Letters 07, no. 05n06 (2000): 631–35. http://dx.doi.org/10.1142/s0218625x00000609.

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Si twinning superlattices are grown on [Formula: see text] by the repeated growth of Si layers with a unit thickness and postgrowth annealing. In order to determine the growth conditions of the Si twinning superlattice, it is essential to measure the crystallographic orientations in the surface regions during growth. Reflection high-energy electron diffraction (RHEED) is very sensitive to the surface orientation. Using the technique to estimate the fraction of the twinned layers in the grown layers by RHEED, we investigate the growth process and thermal stability of the twinned epitaxial layer
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2

Yamada, Yoshimitsu. "The SiC Single Crystal Growth from Nanomaterial Precursor." MRS Advances 4, no. 50 (2019): 2709–15. http://dx.doi.org/10.1557/adv.2019.250.

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ABSTRACTUnlike the conventional layer by layer growth ,three dimensional growth experiments of SiC single crystal by the Chemical Particle Deposition (CPD)method were carried out both on the polar and nonpolar plane of the SiC seed crystal. The comparison of the morphology of the grown crystals on both samples indicated that the electric field formed by the seed crystal strongly effected the diffusion of the supplied Si and C atoms and their compounds to grow the epitaxial crystal. In spite of the low ionicity of Si-C bonds, this remarkable effect of the electric field on the three dimensional
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3

Reinhard, D. K., D. T. Tran, T. Schuelke, M. F. Becker, T. A. Grotjohn, and J. Asmussen. "SiO2 antireflection layers for single-crystal diamond." Diamond and Related Materials 25 (May 2012): 84–86. http://dx.doi.org/10.1016/j.diamond.2012.02.011.

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4

S., D. Jadhav, and S. Jadhav M. "GRAPHENE SYNTHESIS AND ITS APPLICATIONS: A REVIEW." International Journal of Applied and Advanced Scientific Research (IJAASR) 5, no. 2 (2020): 32–37. https://doi.org/10.5281/zenodo.4293304.

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Graphene is nothing but, a single layer of graphite crystal.  Graphite crystal has stacks of carbon layers which are weekly bonded to each other. Due to this situation, these layers can easily slip over each other. Each layer has hexagonally arranged carbon atoms. These layers when appear as single, self standing material is graphene.  It is the fundamental unit for other graphitic materials; hence we can say that, graphene is the basic building block for other graphitic materials. In this review paper, the emphasis was given on various methods employed for synthesis of graphene, its
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5

Zhang, Min Gang, Yuan Kun Lu, and Wen Feng Liu. "The Study of the First Principle for Layer of Si/Ge." Advanced Materials Research 211-212 (February 2011): 1142–46. http://dx.doi.org/10.4028/www.scientific.net/amr.211-212.1142.

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Using the plane-wave ultrasoft pseudopotential method and generalized gradient approximation which based on the first-principles density functional theory, the bond length, energy band structure and density of states of the layer of Si/Ge were calculated. The results show that, compared with the single-crystal Si layers, Si-Ge bond length get longer and the population decrease in the layer of Si/Ge . It can be seen from the energy band structure that the band structure width of the layer of Si/Ge decreases. The optical properties calculations show that, compared with the single-crystal Si laye
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6

Liu, Wenjun, and Mehdi Asheghi. "Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Layers." Journal of Heat Transfer 128, no. 1 (2005): 75–83. http://dx.doi.org/10.1115/1.2130403.

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Self-heating in deep submicron transistors (e.g., silicon-on-insulator and strained-Si) and thermal engineering of many nanoscale devices such as nanocalorimeters and high-density thermomechanical data storage are strongly influenced by thermal conduction in ultra-thin silicon layers. The lateral thermal conductivity of single-crystal silicon layers of thicknesses 20 and 100nm at temperatures between 30 and 450K are measured using joule heating and electrical-resistance thermometry in suspended microfabricated structures. In general, a large reduction in thermal conductivity resulting from pho
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7

Muravsky, Alexander A., Anatoli A. Murauski, and Alina S. Yakovleva. "47.1: Green Technology of Photoalignment Layer Coating from H2O solution for Achromatic Polymerizable Liquid Crystal Retarder." SID Symposium Digest of Technical Papers 54, S1 (2023): 333–35. http://dx.doi.org/10.1002/sdtp.16297.

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Combination of several films from polymerizable liquid crystal (PLC) into single device system with complex properties faces a fabrication issue due to chemical compatibility and mutual alignment effect of the neighbouring layers. Eco-friendly green technology of high anchoring azo-dye photoalignment layer coating from water solvent provides efficient solution to hinder interlayer interaction of bottom PLC layer avoiding its chemical damage and providing unique photoalignment pattern for top PLC retarder. The advanced possibilities of green technology of photoalignment layers coated from H2O s
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Marizy, Adrien, Pascal Roussel, Armelle Ringuedé, and Michel Cassir. "Atomic layer deposition of epitaxial CeO2 thin layers for faster surface hydrogen oxidation and faster bulk ceria reduction/reoxidation." Journal of Materials Chemistry A 3, no. 19 (2015): 10498–503. http://dx.doi.org/10.1039/c5ta00861a.

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Khrykin, O. I., Yu N. Drozdov, M. N. Drozdov, et al. "Single-crystal GaN/AlN layers on CVD diamond." Technical Physics Letters 41, no. 10 (2015): 954–56. http://dx.doi.org/10.1134/s1063785015100065.

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10

Shin, C. S., D. Gall, N. Hellgren, J. Patscheider, I. Petrov, and J. E. Greene. "Vacancy hardening in single-crystal TiNx(001) layers." Journal of Applied Physics 93, no. 10 (2003): 6025–28. http://dx.doi.org/10.1063/1.1568521.

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Дисертації з теми "Single-crystal layers"

1

Yao, Yao. "Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/921.

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Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to traditional wide bandgap semiconductors. It exists as five polymorphs (α-, β-, γ-, δ-, and ε-Ga2O3), of which β-Ga2O3 is the thermodynamically stable form, and the most extensively studied phase. β-Ga2O3 has a wide bandgap of ~4.8 eV and exhibits a superior figure-of-merit for power devices compared to other wide bandgap materials, such as SiC and GaN. These make β-Ga2O3 a promising candidate in a host of electronic and optoelectronic applications. Recent advances in β-Ga2O3 single crystals growth have
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2

Schönauer, Kathrin [Verfasser], Frank Stefan [Akademischer Betreuer] Tautz, and Peter [Akademischer Betreuer] Jakob. "Structural and electronic investigations on homo- and hetero-organic layers involving CuPc on silver single crystal surfaces / Kathrin Schönauer ; Frank Stefan Tautz, Peter Jakob." Aachen : Universitätsbibliothek der RWTH Aachen, 2015. http://d-nb.info/112591064X/34.

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3

Schönauer, Kathrin Maria [Verfasser], Frank Stefan [Akademischer Betreuer] Tautz, and Peter [Akademischer Betreuer] Jakob. "Structural and electronic investigations on homo- and hetero-organic layers involving CuPc on silver single crystal surfaces / Kathrin Schönauer ; Frank Stefan Tautz, Peter Jakob." Aachen : Universitätsbibliothek der RWTH Aachen, 2015. http://d-nb.info/112591064X/34.

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4

Kraft, Lars P. [Verfasser], and Heinz J. [Akademischer Betreuer] Jänsch. "Xe-129 NMR Study on Xenon Monolayers and Thin Films Adsorbed on Single Crystal Metals and Carbonaceous Ad-Layers / Lars P. Kraft ; Betreuer: Heinz J. Jänsch." Marburg : Philipps-Universität Marburg, 2018. http://d-nb.info/1173322523/34.

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Zhou, Zhijian. "Layer transferred single-crystal silicon piezoresistive aero-acoustic microphone /." View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20ZHOUZ.

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6

Zeis, Roswitha. "Single crystal field-effect transistors based on layered semiconductors." [S.l.] : [s.n.], 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=975775405.

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7

Kim, You Jin. "Preparation and magnetic properties of layered rare-earth ferrites." Kyoto University, 2020. http://hdl.handle.net/2433/259048.

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Piecha, Julita. "Segregation of ions in surface layer of the LiNbO3 single crystal induced by proton exchange reaction and by thermal treatment." Doctoral thesis, Katowice : Uniwersytet Śląski, 2016. http://hdl.handle.net/20.500.12128/713.

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Анотація:
Niobian litu to ferroelektryczny kryształ otrzymywany metodą Czochralskiego, wykazuje on strukturę romboedryczną z grupą przestrzenną R3c. Charakteryzuje się wysokimi wartościami temperatury Curie (TC≈1120 °C) oraz temperatury topnienia (Tm≈1230 °C). Celem moich badań było określenie wpływu reakcji protonizacji oraz redukcji na segregację jonów litu w warstwie powierzchniowej kongruentnego LiNbO3. Wysoką mobilność jonów litu w warstwie powierzchniowej oraz ich migrację z wnętrza kryształu ku jego powierzchni wykorzystano w procesie wymiany jonowej Li+/H+. Reakcję wymiany protonowej prowadzono
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9

Engelmayer, Johannes [Verfasser], Thomas [Gutachter] Lorenz, and Markus [Gutachter] Braden. "Crystal growth and characterization of doped perovskite titanates ATiO3 and single-layered manganites R1-xA1+xMnO4 / Johannes Engelmayer ; Gutachter: Thomas Lorenz, Markus Braden." Köln : Universitäts- und Stadtbibliothek Köln, 2020. http://d-nb.info/1225478472/34.

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Rutzinger, Dieter. "Layered Lanthanide Coinage-Metal Diarsenides: Syntheses, Commensurately and Incommensurately Modulated Structures, Electric and Magnetic Properties." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-26728.

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The crystal structures of the LnAgAs2 and LnAuAs2 compounds were reinvestigated by single-crystal diffraction experiments. Contrary to the respective copper compounds, no stuffed variant of the HfCuSi2 type was found. For CeAuAs2, GdAuAs2 and TbAuAs2, a slight under-occupation of the gold position was determined, the other compounds crystallize in a 1:1:2 ratio. Additionally, LaCuAs2 was synthesized for the first time in a 1:1:2 ratio. Due to the fact that imaging plate diffraction systems were used instead of four-circle diffractometers, satellite reflections could be observed for most of the
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Частини книг з теми "Single-crystal layers"

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Bauer, E. "Phase Transitions on Single-Crystal Surfaces and in Chemisorbed Layers." In Structure and Dynamics of Surfaces II. Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-46591-8_4.

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2

Fedyushkin, Alexey. "The Influence of Controlled Vibration Effects on Fluid Flow in Technological and Engineering Processes." In Lecture Notes in Civil Engineering. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-4355-1_64.

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AbstractThis article presents the results of studies demonstrating the influence of nonlinear effects of laminar flow under vibrational harmonic effects on fluid flow and heat transfer. The paper summarizes the results of research on the influence of vibrations in various fluid flow problems. The effect of periodic oscillations on the symmetrization of an asymmetric flow in a diffuser, on Rayleigh-Bernard convection and on the wide of boundary layers in various single crystal growth processes are shown.
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3

Stocker, W., S. N. Magonov, H. I. Cantow, H. Böttner, S. Schelb, and M. Tacke. "Scanning Tunneling Microscopy Analysis of Single Crystal PbSe-Surfaces and Epitaxial Layers on BaF2." In Monitoring of Gaseous Pollutants by Tunable Diode Lasers. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2763-9_28.

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4

Zhang, Ying Xiao, Hong Li Suo, Yue Zhao, et al. "Epitaxial Growth of CeO2 Buffer Layers on Both YSZ Single Crystal and Textured Ni5W Substrates by MOD Method." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-432-4.2011.

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5

Buttrey, D. J., R. R. Schartman, J. M. Honig, Bruce F. Collier, and J. E. Greedan. "Congruent Growth of Single-Crystal La2NiO4and Other Layered Nickelates by Radiofrequency Skull Melting." In Inorganic Syntheses. John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470132616.ch28.

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6

Seo, Jung Doo, Joon Ho An, Jung Gon Kim, et al. "An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.9.

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7

Liu, Ziyuan, Seiya Ogota, Massoud Badaye, G. A. Alvarez, and Tadataka Morishita. "Determination of Surface Atomic Layer of SrTiO3 Single Crystal and RBa2Cu3Oy Thin Films by Glancing Incident-Exiting X-Ray." In Advances in Superconductivity VIII. Springer Japan, 1996. http://dx.doi.org/10.1007/978-4-431-66871-8_234.

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Khedhiri, Lamia. "Crystal Structure of [C17H22N2]3[P6O18][H2O]8." In Crystal Growth - Technologies and Applications [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.108160.

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[C17H22N2]3[P6O18][H2O]8., a new organic cyclohexaphosphate, was synthesized as single crystals and grown by solution growth method. The crystal structure of the grown product was determined by single crystal X-ray diffraction analysis. The title material crystallized in the monoclinic system of the C2/c space group. The P6O186− ring anions and some water molecules form layers spreading around (b, c) planes via O-H…O hydrogen bonds. Between these inorganic layers are anchored organic cations, which establish H-bonds to interconnect the different adjacent layers and so contribute to the cohesio
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BILIĆ, ANTE, JEFFREY R. REIMERS, and NOEL S. HUSH. "FUNCTIONALIZATION OF SEMICONDUCTOR SURFACES BY ORGANIC LAYERS: CONCERTED CYCLOADDITION VERSUS STEPWISE FREE-RADICAL REACTION MECHANISMS." In Properties of Single Organic Molecules on Crystal Surfaces. PUBLISHED BY IMPERIAL COLLEGE PRESS AND DISTRIBUTED BY WORLD SCIENTIFIC PUBLISHING CO., 2006. http://dx.doi.org/10.1142/9781860948053_0012.

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Kawamata, Daisuke, and Masahiro Seo. "Mechanical Properties of Single-Crystal Tantalum (100) Surface Covered with Anodic Oxide Film." In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. Elsevier, 2006. http://dx.doi.org/10.1016/b978-044452224-5/50071-8.

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Тези доповідей конференцій з теми "Single-crystal layers"

1

Pfennig, A., and A. Kranzmann. "Oxidation of a Single Crystal Nickel-Base Superalloy at 950 °C – a Kinetic and Microstructure Study." In CORROSION 2008. NACE International, 2008. https://doi.org/10.5006/c2008-08463.

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Abstract The nickel-base single crystal alloy investigated is a widely used material for first and second row blades in stationary gas turbines. Nickel-base superalloys are especially designed to resist high temperature oxidation by process gases. To determine this high temperature behaviour oxidation testing was carried out using samples cut perpendicular to (001)-direction. Microstructures were characterized by X-ray diffraction XRD, Light Microscopy LM, Scanning Electron Microscopy SEM, and X-ray energy dispersive spectroscopy (EDS), after a series of heat treatments (950 °C, 0 h -1000 h).
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2

Yao, Shipeng, Hao Sun, Lin Gan, Jinhua Wu, Zhangyu Hou, and Cun-Zheng Ning. "Room-temperature continuous-wave lasing based on a two-dimensional erbium compound." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jth2a.209.

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We successfully grow 2D layered ErOCl single crystals on silicon substrates. Combined with photonic crystal microcavity, continuous-wave lasing with an ultra-low threshold at room-temperature was achieved at 1.5 μm.
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3

Sekar, Deepak C., and Zvi Or-Bach. "Monolithic 3D-ICs with single crystal silicon layers." In 2011 IEEE International 3D Systems Integration Conference (3DIC). IEEE, 2012. http://dx.doi.org/10.1109/3dic.2012.6262978.

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4

Brown, Alan, Garry O'Neill, and Scott C. Blackstone. "Single-crystal micromachining using multiple fusion-bonded layers." In Micromachining and Microfabrication, edited by Jean Michel Karam and John A. Yasaitis. SPIE, 2000. http://dx.doi.org/10.1117/12.396460.

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5

Li, Shuti, Jianxing Cao, Guanghan Fan, et al. "GaP single crystal layers grown on GaN by MOCVD." In Photonics and Optoelectronics Meetings 2009, edited by Michael Grätzel, Hiroshi Amano, Chin Hsin Chen, Changqing Chen, and Peng Wang. SPIE, 2009. http://dx.doi.org/10.1117/12.840796.

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6

Osugi, Yukihisa, Takashi Yoshino, Kenji Suzuki, and Takami Hirai. "Single crystal FBAR with LiNbO3 and LiTaO3 piezoelectric substance layers." In 2007 IEEE/MTT-S International Microwave Symposium. IEEE, 2007. http://dx.doi.org/10.1109/mwsym.2007.380118.

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7

Asheghi, M., M. N. Touzelbaev, K. E. Goodson, Y. K. Leung, and S. S. Wong. "Temperature-Dependent Thermal Conductivity of Single-Crystal Silicon Layers in SOI Substrates." In ASME 1996 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1996. http://dx.doi.org/10.1115/imece1996-1340.

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Abstract Self heating diminishes the reliability of SOI transistors, particularly those that must withstand electrostatic discharge (ESD) pulses. This problem is alleviated in part by lateral thermal conduction in the silicon device layer, whose thermal conductivity is not known. The present work develops a technique for measuring this property and provides data for layers in wafers fabricated using bond-and-etch-back (BESOI) technology. The room-temperature thermal conductivity data decrease with decreasing layer thickness, ds, to a value nearly 40 percent less than that of bulk silicon for d
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8

Kuo, Chien-Chen, and Fang-Chung Chen. "Modified hole transport layers for high-performance single-crystal perovskite solar cells." In Organic, Hybrid, and Perovskite Photovoltaics XXII, edited by Zakya H. Kafafi, Paul A. Lane, Gang Li, Ana Flávia Nogueira, and Ellen Moons. SPIE, 2021. http://dx.doi.org/10.1117/12.2593355.

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9

Gachon, D., E. Courjon, J. Masson, B. Guichardaz, and S. Ballandras. "High Overtone Bulk Acoustic Resonators Based on Thinning Single-crystal Piezoelectric Layers." In 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum. IEEE, 2007. http://dx.doi.org/10.1109/freq.2007.4319257.

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Zhang, Jianhua, Xiaojun Zhang, Tien-Chien Jen, Jiafu Liu, and Yi-Hsin Yen. "FEM Analysis on Damage Layer in Wire Saw Cutting Single Crystal Silicon." In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-37328.

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With the rapid development of large scale integrated circuit (IC), there are strong demands for silicon wafers developing towards large diameter and thin wafer direction. The fixed-abrasive diamond wire saw (FAWS) technology is often used to cut the large diameter silicon. Currently, the detection of damage layers mainly depends on experiments, which are not only costly and time-consuming, but also would cause the new damage during the detection process, in the FAWS technology. In this paper, the damage layer of the material is studied by using the multi-grain finite element method. The intera
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Звіти організацій з теми "Single-crystal layers"

1

Lu, Di, David J. Baek, Seung Sae Hong, Lena F. Kourkoutis, Yasuyuki Hikita, and Harold Y. Hwang. Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers. Office of Scientific and Technical Information (OSTI), 2016. http://dx.doi.org/10.2172/1310026.

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