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Готові списки джерел за темами / Single-crystal layers / Статті в журналах

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Статті в журналах з теми "Single-crystal layers"

Автор: Grafiati

Опубліковано: 3 червня 2025

Оновлено: 31 липня 2025

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1

HIBINO, H., and T. OGINO. "Si TWINNING SUPERLATTICE: GROWTH OF NEW SINGLE CRYSTAL Si." Surface Review and Letters 07, no. 05n06 (2000): 631–35. http://dx.doi.org/10.1142/s0218625x00000609.

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Si twinning superlattices are grown on [Formula: see text] by the repeated growth of Si layers with a unit thickness and postgrowth annealing. In order to determine the growth conditions of the Si twinning superlattice, it is essential to measure the crystallographic orientations in the surface regions during growth. Reflection high-energy electron diffraction (RHEED) is very sensitive to the surface orientation. Using the technique to estimate the fraction of the twinned layers in the grown layers by RHEED, we investigate the growth process and thermal stability of the twinned epitaxial layer

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2

Yamada, Yoshimitsu. "The SiC Single Crystal Growth from Nanomaterial Precursor." MRS Advances 4, no. 50 (2019): 2709–15. http://dx.doi.org/10.1557/adv.2019.250.

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ABSTRACTUnlike the conventional layer by layer growth ,three dimensional growth experiments of SiC single crystal by the Chemical Particle Deposition (CPD)method were carried out both on the polar and nonpolar plane of the SiC seed crystal. The comparison of the morphology of the grown crystals on both samples indicated that the electric field formed by the seed crystal strongly effected the diffusion of the supplied Si and C atoms and their compounds to grow the epitaxial crystal. In spite of the low ionicity of Si-C bonds, this remarkable effect of the electric field on the three dimensional

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3

Reinhard, D. K., D. T. Tran, T. Schuelke, M. F. Becker, T. A. Grotjohn, and J. Asmussen. "SiO2 antireflection layers for single-crystal diamond." Diamond and Related Materials 25 (May 2012): 84–86. http://dx.doi.org/10.1016/j.diamond.2012.02.011.

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4

S., D. Jadhav, and S. Jadhav M. "GRAPHENE SYNTHESIS AND ITS APPLICATIONS: A REVIEW." International Journal of Applied and Advanced Scientific Research (IJAASR) 5, no. 2 (2020): 32–37. https://doi.org/10.5281/zenodo.4293304.

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Graphene is nothing but, a single layer of graphite crystal.  Graphite crystal has stacks of carbon layers which are weekly bonded to each other. Due to this situation, these layers can easily slip over each other. Each layer has hexagonally arranged carbon atoms. These layers when appear as single, self standing material is graphene.  It is the fundamental unit for other graphitic materials; hence we can say that, graphene is the basic building block for other graphitic materials. In this review paper, the emphasis was given on various methods employed for synthesis of graphene, its

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5

Zhang, Min Gang, Yuan Kun Lu, and Wen Feng Liu. "The Study of the First Principle for Layer of Si/Ge." Advanced Materials Research 211-212 (February 2011): 1142–46. http://dx.doi.org/10.4028/www.scientific.net/amr.211-212.1142.

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Using the plane-wave ultrasoft pseudopotential method and generalized gradient approximation which based on the first-principles density functional theory, the bond length, energy band structure and density of states of the layer of Si/Ge were calculated. The results show that, compared with the single-crystal Si layers, Si-Ge bond length get longer and the population decrease in the layer of Si/Ge . It can be seen from the energy band structure that the band structure width of the layer of Si/Ge decreases. The optical properties calculations show that, compared with the single-crystal Si laye

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6

Liu, Wenjun, and Mehdi Asheghi. "Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Layers." Journal of Heat Transfer 128, no. 1 (2005): 75–83. http://dx.doi.org/10.1115/1.2130403.

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Self-heating in deep submicron transistors (e.g., silicon-on-insulator and strained-Si) and thermal engineering of many nanoscale devices such as nanocalorimeters and high-density thermomechanical data storage are strongly influenced by thermal conduction in ultra-thin silicon layers. The lateral thermal conductivity of single-crystal silicon layers of thicknesses 20 and 100nm at temperatures between 30 and 450K are measured using joule heating and electrical-resistance thermometry in suspended microfabricated structures. In general, a large reduction in thermal conductivity resulting from pho

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7

Muravsky, Alexander A., Anatoli A. Murauski, and Alina S. Yakovleva. "47.1: Green Technology of Photoalignment Layer Coating from H₂O solution for Achromatic Polymerizable Liquid Crystal Retarder." SID Symposium Digest of Technical Papers 54, S1 (2023): 333–35. http://dx.doi.org/10.1002/sdtp.16297.

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Combination of several films from polymerizable liquid crystal (PLC) into single device system with complex properties faces a fabrication issue due to chemical compatibility and mutual alignment effect of the neighbouring layers. Eco-friendly green technology of high anchoring azo-dye photoalignment layer coating from water solvent provides efficient solution to hinder interlayer interaction of bottom PLC layer avoiding its chemical damage and providing unique photoalignment pattern for top PLC retarder. The advanced possibilities of green technology of photoalignment layers coated from H2O s

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8

Marizy, Adrien, Pascal Roussel, Armelle Ringuedé, and Michel Cassir. "Atomic layer deposition of epitaxial CeO2 thin layers for faster surface hydrogen oxidation and faster bulk ceria reduction/reoxidation." Journal of Materials Chemistry A 3, no. 19 (2015): 10498–503. http://dx.doi.org/10.1039/c5ta00861a.

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9

Khrykin, O. I., Yu N. Drozdov, M. N. Drozdov, et al. "Single-crystal GaN/AlN layers on CVD diamond." Technical Physics Letters 41, no. 10 (2015): 954–56. http://dx.doi.org/10.1134/s1063785015100065.

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10

Shin, C. S., D. Gall, N. Hellgren, J. Patscheider, I. Petrov, and J. E. Greene. "Vacancy hardening in single-crystal TiNx(001) layers." Journal of Applied Physics 93, no. 10 (2003): 6025–28. http://dx.doi.org/10.1063/1.1568521.

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11

Chen, Mingce, Qi Shao, Wenda He, et al. "Electrically Controlled Liquid Crystal Microlens Array Based on Single-Crystal Graphene Coupling Alignment for Plenoptic Imaging." Micromachines 11, no. 12 (2020): 1039. http://dx.doi.org/10.3390/mi11121039.

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As a unique electric-optics material, liquid crystals (LCs) have been used in various light-control applications. In LC-based light-control devices, the structural alignment of LC molecules is of great significance. Generally, additional alignment layers are required for LC lens and microlens, such as rubbed polyimide (PI) layers or photoalignment layers. In this paper, an electrically controlled liquid crystal microlens array (EC-LCMLA) based on single-crystal graphene (SCG) coupling alignment is proposed. A monolayer SCG with high conductivity and initial anchoring of LC molecules was used a

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12

Shi, Zhen Xue, Shi Zhong Liu, Xiao Guang Wang, and Jia Rong Li. "Hot-Gas Corrosion Resistance of DD9 Single Crystal Superalloy." Materials Science Forum 849 (March 2016): 463–67. http://dx.doi.org/10.4028/www.scientific.net/msf.849.463.

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The hot-gas corrosion resistance of DD9 single crystal superalloy at 900°Cwas investigated in the present study. The composition and the morphology of corrosion layer were characterized by energy dispersive X-ray analysis spectroscope (EDS) and scanning electron microscopy (SEM). The results show that DD9 single crystal superalloy has excellent hot-gas corrosion resistance and basically obeys parabolic rate law during corrosion test for 100 h at 900 °C. The irregular and prismatic morphology of NiO tightly piles each other on the surface after 100 h corrosion test. The corrosion products posse

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13

Gentsar, P. O., A. V. Stronski, L. A. Karachevtseva, and V. F. Onyshchenko. "Optical Properties of Monocrystalline Silicon Nanowires." Physics and Chemistry of Solid State 22, no. 3 (2021): 453–59. http://dx.doi.org/10.15330/pcss.22.3.453-459.

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The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.

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14

Nakajima, Tomohiko, Takako Nakamura, and Tetsuo Tsuchiya. "Crystal-Plane Dependence of Nb-Doped Rutile TiO2 Single Crystals on Photoelectrochemical Water Splitting." Catalysts 9, no. 9 (2019): 725. http://dx.doi.org/10.3390/catal9090725.

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The crystal-plane dependence of the photoelectrochemical (PEC) water-splitting property of rutile-structured Nb-doped TiO2 (TiO2:Nb) single-crystal substrates was investigated. Among the crystal planes, the (001) plane was a very promising surface for attaining good photocurrent. Under 1 sun illumination at 1.5 V vs. a reversible hydrogen electrode, the TiO2:Nb(001) single-crystal substrate showed the highest photocurrent (0.47 mA/cm2) among the investigated substrates. The doped Nb ions were segregated inward from the top surface, and the TiO2 ultrathin layer was formed at the surface of the

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15

Guo, Linhai, Li Tian, Hui Wang, Lingxue Meng, and Chujun Feng. "(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition." ECS Transactions 113, no. 7 (2024): 23–36. http://dx.doi.org/10.1149/11307.0023ecst.

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In this study, n-type doped single-crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single-crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was d

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16

Li, Huan Yong, Wan Qi Jie, Xiao Qin Wang, and Ke Wei Xu. "Microstructural and Micromorphological Studies on ZnSe Single Crystals Using AFM/FE-SEM/RO-XRD." Key Engineering Materials 336-338 (April 2007): 633–36. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.633.

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The microstructure and surface micromorphology of ZnSe single crystals grown directly from zinc and selenium have been investigated using rotation orientation x-ray diffraction (RO-XRD), atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM). The ZnSe samples exhibit only the surface leaning to (111) singular face by the angle of 3.13°, which is the buildup of two-dimensional dendritic crystal layers. Numerous nuclei and cavities distribute unevenly across the crystal surface, governing the formation of growth layer, while the dendritic crystal layers develop ra

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17

Ross, Jennifer, Mike Rubin, and T. K. Gustafson. "Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition." Journal of Materials Research 8, no. 10 (1993): 2613–16. http://dx.doi.org/10.1557/jmr.1993.2613.

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We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is t

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18

Nowicka, Beata, Mateusz Reczyński, Michał Rams, Wojciech Nitek, Marcin Kozieł, and Barbara Sieklucka. "Larger pores and higher Tc: {[Ni(cyclam)]3[W(CN)8]2·solv}n – a new member of the largest family of pseudo-polymorphic isomers among octacyanometallate-based assemblies." CrystEngComm 17, no. 18 (2015): 3526–32. http://dx.doi.org/10.1039/c5ce00287g.

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19

Gong, Yu, Wang-Kang Han, Hui-Shu Lu, et al. "Single crystal to single crystal transformation of spin-crossover coordination polymers from 3D frameworks to 2D layers." Journal of Materials Chemistry C 9, no. 15 (2021): 5082–87. http://dx.doi.org/10.1039/d1tc00470k.

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New Hofmann-type metal–organic frameworks display rare and complete ligand exchange induced single crystal to single crystal transformations from 3D frameworks to 2D layers, accompanied by magnetic properties transition from two-step SCO behavior to hysteretic SCO behavior.

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20

Pu, Ming Hua, Guo Li, Xiao Hua Du, et al. "A New Series of Potential Buffer Layers for REBCO Coated Conductor." Materials Science Forum 546-549 (May 2007): 1881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.1881.

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A new series of ReBiO3 (RBO, Re=Y, Sm or other lanthanide) layers have been prepared on single crystal LaAlO3 or SrTiO3 respectively by a low-cost chemical solution deposition (CSD) method, and their structures have been investigated. With deferent Re element, the ReBiO3 phase has a similar cubic lattice with the pseudo-cubic lattice parameter a’ of about 3.81~3.94Å, which is closely matched to that of the ReBa2Cu3Ox (RBCO). In addition, these ReBiO3 phase are stable when they are sintered on 750~1050°C. After annealed below 850°C in air, highly c-axis oriented ReBiO3 layers can be formed on t

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21

Kim, Kyoung-Ho, Minh-Tan Ha, Heesoo Lee, et al. "Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition." Materials 15, no. 3 (2022): 1050. http://dx.doi.org/10.3390/ma15031050.

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This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga2O3 layer grown using a conventional single-step growth, the double Ga2O3 layers grown using a two-step growth process exhibited excellent thickness uniformity, surface roughness, and crystal quality. In addition, the spatial gradient of carrier concentration in the upper layer of the double layers was significantly affected by the mist flow veloc

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22

Liu, Cheng-Kai, Ming-Hsien Li, Chi-Lun Ting, Andy Ying-Guey Fuh, and Ko-Ting Cheng. "Multiple-Color Reflectors Using Bichiral Liquid Crystal Polymer Films and Their Applications in Liquid Crystal Displays." Polymers 12, no. 12 (2020): 3031. http://dx.doi.org/10.3390/polym12123031.

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Multiple-color reflectors using bichiral liquid crystal polymer films (BLCPFs) are investigated. The BLCPFs consist of alternate layers of two different single-pitch cholesteric liquid crystal (CLC) layers, named CLC#A and CLC#B. The thickness of each CLC layer equals its single pitch length. The optical properties in terms of reflections, reflection-wavelength ranges, and distributions of reflection spectra of the BLCPFs that result from the fixed pitch length of CLC#A along with the decrease of the pitch length of CLC#B are qualitatively simulated and investigated. The results indicate that

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23

Burazer, Sanja, Tereza Košutová, Lukáš Horák, Milan Dopita, Ana Šantić та Anna Fučíková. "Structural and morphological investigation of (R)-α-phenylethylammonium-oxalate in bulk vs. nanowires on a modified substrate surface". RSC Advances 14, № 12 (2024): 8434–44. http://dx.doi.org/10.1039/d4ra00558a.

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Different forms of a chiral organic insulator, (R)-α-phenylethylammonium-oxalate (RAPEAO), was prepared: single crystal, powder and spin-coated layers on silicon substrate surfaces modified by plasma treatment or a polymer layer.

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24

Кукушкин, С. А., та Ш. Ш. Шарофидинов. "Новый метод получения объемных кристаллов AlN, GaN и AlGaN с использованием гибридных подложек SiC/Si". Физика твердого тела 61, № 12 (2019): 2338. http://dx.doi.org/10.21883/ftt.2019.12.48549.51ks.

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The paper presents the main provisions of the new method of growing bulk, with a thickness of 100 μm or more, single-crystal AlN, AlGaN and GaN films on silicon poles with a silicon carbide buffer layer with their subsequent separation from the Si substrate. The main essence of this method is the combination of the method of chloride-hydride epitaxy, which ensures high growth rates of III-nitride layers using as substrate for growth, Si substrate with a buffer layer of a nanoscale atomic SiC film. The Si substrate with a SiC layer grown by the substitution method has a number of structural, ph

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25

Kwei, G. H., A. C. Lawson, A. C. Larson, B. Morosin, E. M. Larson, and P. C. Canfield. "Structure of Ce2Pt6Ga15: interplanar disorder from the Ce2Ga3 layers." Acta Crystallographica Section B Structural Science 52, no. 4 (1996): 580–85. http://dx.doi.org/10.1107/s0108768196000481.

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The structure of the heavy fermion compound Ce2Pt6Ga15 has been determined from neutron powder and X-ray/neutron single-crystal diffraction. Examination of symmetry equivalence among the single-crystal data, as well as the good fit of the powder data to the final structural arrangement, with all the atoms on symmetry sites, suggests that the correct space group is P63/mmc. The structure is unusual in that Ce layers have 1/3 of the Ce atoms replaced by groups of three Ga atoms; distances between atoms in these planes suggest this substitution must occur in a concerted fashion. The refined occup

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26

Liu, Ming, and Fuqian Yang. "Effect of Crystal Orientation on Piezoelectric Response of Single-Crystal Piezoelectric Layers." Journal of Computational and Theoretical Nanoscience 9, no. 12 (2012): 2062–67. http://dx.doi.org/10.1166/jctn.2012.2616.

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27

Ivashevskaya, Svetlana N., Jacco van de Streek, Juste E. Djanhan, et al. "Structure determination of seven phases and solvates of Pigment Yellow 183 and Pigment Yellow 191 from X-ray powder and single-crystal data." Acta Crystallographica Section B Structural Science 65, no. 2 (2009): 212–22. http://dx.doi.org/10.1107/s0108768109001827.

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The crystal structures of two industrially produced laked yellow pigments, Pigment Yellow 183 [P.Y. 183, Ca(C16H10Cl2N4O7S2), α phase] and Pigment Yellow 191 [P.Y. 191, Ca(C17H13ClN4O7S2), α and β phases], were determined from laboratory X-ray powder diffraction data. The coordinates of the molecular fragments of the crystal structures were found by means of real-space methods (simulated annealing) with the program DASH. The coordinates of the calcium ions and the water molecules were determined by combining real-space methods (DASH and MRIA) and repeated Rietveld refinements (TOPAS) of the pa

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28

Eni, S., Y. Wang, N. Hashimoto, Somei Ohnuki, and Toshio Narita. "Cross-Sectional TEM Characterization of Re-Based Diffusion Barrier on Nb Substrate." Materials Science Forum 696 (September 2011): 318–23. http://dx.doi.org/10.4028/www.scientific.net/msf.696.318.

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Cross-sectional structures of a Re-based diffusion barrier coating on Nb as ultra high temperature material were investigated in order to verify the crystalline structure and composition of the coated layer. Three types coating specimens were prepared by electroplating Re from an aqueous solution on an Nb substrate, followed by Cr-pack cementation in vacuum. The coating process produced three distinct layers; an outer Cr(Re) layer, an intermediate Re-Cr-Nb layer, and an inner Nb(Re) layer. A crystal structure of Cr(Re) and Nb(Re) layers possess similar single crystal bcc structure. The Re-Cr-N

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29

Matko, Igor, Bernard Chenevier, Jean Marie Bluet, Roland Madar, Fabrice Letertre, and Wahib Saikaly. "Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence." Materials Science Forum 556-557 (September 2007): 255–58. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.255.

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QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. In order to overcome the difficulty of limited thickness, an important improvement has been demonstrated, which consists in obtaining thick SiC structure by growing epitaxial SiC layers on top of transferred layers. The aim of this work is a structural analysis of such layers by Transmission Electron Microscopy and Photoluminescence.

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30

Qiao, Dongyang, Feng Shi, Ye Tian, et al. "Ultra-Smooth Polishing of Single-Crystal Silicon Carbide by Pulsed-Ion-Beam Sputtering of Quantum-Dot Sacrificial Layers." Materials 17, no. 1 (2023): 157. http://dx.doi.org/10.3390/ma17010157.

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Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directl

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31

Kornyakov, Ilya V., and Sergey V. Krivovichev. "Crystal Chemical Relations in the Shchurovskyite Family: Synthesis and Crystal Structures of K2Cu[Cu3O]2(PO4)4 and K2.35Cu0.825[Cu3O]2(PO4)4." Crystals 11, no. 7 (2021): 807. http://dx.doi.org/10.3390/cryst11070807.

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Single crystals of two novel shchurovskyite-related compounds, K2Cu[Cu3O]2(PO4)4 (1) and K2.35Cu0.825[Cu3O]2(PO4)4 (2), were synthesized by crystallization from gaseous phase and structurally characterized using single-crystal X-ray diffraction analysis. The crystal structures of both compounds are based upon similar Cu-based layers, formed by rods of the [O2Cu6] dimers of oxocentered (OCu4) tetrahedra. The topologies of the layers show both similarities and differences from the shchurovskyite-type layers. The layers are connected in different fashions via additional Cu atoms located in the in

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32

Wołczyński, Waldemar, Borys Mikułowski, and Grzegorz Boczkal. "Control of the Single Crystal Reinforcement by the Intermetallic Compound Layers." Materials Science Forum 649 (May 2010): 125–30. http://dx.doi.org/10.4028/www.scientific.net/msf.649.125.

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. An improvement of the Brody & Flemings theory has been proposed to study not only the solute segregation but the solute redistribution during the single crystal growth as well. The redistribution is treated as a phenomenon superposed upon the segregation phenomenon. The crystal growth has been performed by the closed Bridgman system with a constant growth rate and an imposed temperature gradient. A hypo-eutectic Zn-Ti alloy has been subjected to oriented growth and precipitation of the Zn-16Ti intermetallic compound was observed. The precipitates have been placed as some layers distribut

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33

ITAKURA, Akiko, and Ichiro ARAKAWA. "Ellipsometric Study of Physisorbed Layers on Single Crystal Surfaces." Hyomen Kagaku 13, no. 8 (1992): 448–55. http://dx.doi.org/10.1380/jsssj.13.8_448.

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34

Shengurov, V. G., S. A. Denisov, V. Yu Chalkov, et al. "Thin single-crystal Ge layers on 2″ Si substrates." Technical Physics Letters 41, no. 1 (2015): 36–39. http://dx.doi.org/10.1134/s1063785015010113.

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35

Tao, Xin, Elham Mafi, and Yi Gu. "Ultrafast carrier dynamics in single-crystal In2Se3 thin layers." Applied Physics Letters 103, no. 19 (2013): 193115. http://dx.doi.org/10.1063/1.4828558.

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36

Fogarassy, Zsolt, Gergely Dobrik, Lajos Károly Varga, László Péter Biró, and János L. Lábár. "Growth of Ni layers on single crystal sapphire substrates." Thin Solid Films 539 (July 2013): 96–101. http://dx.doi.org/10.1016/j.tsf.2013.05.077.

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37

Sáfrán, G., P. Keusch, J. R. Günter, and P. B. Barna. "Development and properties of single-crystal silver selenide layers." Thin Solid Films 215, no. 2 (1992): 147–51. http://dx.doi.org/10.1016/0040-6090(92)90429-f.

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38

Tung, R. T., and F. Schrey. "Growth of single crystal CoSi2 layers at room temperature." Journal of Crystal Growth 95, no. 1-4 (1989): 455–60. http://dx.doi.org/10.1016/0022-0248(89)90441-7.

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39

Findeling-Dufour, Corinne, and Alix Gicquel. "Study for fabricating large area diamond single-crystal layers." Thin Solid Films 308-309 (October 1997): 178–85. http://dx.doi.org/10.1016/s0040-6090(97)00428-8.

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40

Dellea, Stefano, Giacomo Langfelder, and Antonio Francesco Longoni. "Fatigue in Nanometric Single-Crystal Silicon Layers and Beams." Journal of Microelectromechanical Systems 24, no. 4 (2015): 822–30. http://dx.doi.org/10.1109/jmems.2014.2352792.

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41

Liu, W., and M. Asheghi. "Phonon–boundary scattering in ultrathin single-crystal silicon layers." Applied Physics Letters 84, no. 19 (2004): 3819–21. http://dx.doi.org/10.1063/1.1741039.

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42

Topolov, Vitaly Yu, and Ashura N. Isaeva. "Hydrostatic piezoelectric parameters of lead-free 2–0–2 composites with two single-crystal components: Waterfall-like orientation dependences." Journal of Advanced Dielectrics 10, no. 04 (2020): 2050015. http://dx.doi.org/10.1142/s2010135x20500150.

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Анотація:

A system of hydrostatic parameters is studied in novel 2–0–2 composites that contain two lead-free piezoelectric single-crystal components. The ferroelectric domain-engineered alkali niobate-tantalate-based single-crystal layer promotes large values of the piezoelectric coefficients [Formula: see text] and [Formula: see text], hydrostatic squared figure of merit [Formula: see text], and hydrostatic electromechanical coupling factor [Formula: see text] of the composite wherein the 0–3 Li2B4O7 single crystal/polyethylene layers are adjacent to the aforementioned single-crystal layer. Hereby, the

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43

Nikolaev, K. V., I. A. Makhotkin, S. N. Yakunin, R. W. E. van de Kruijs, M. A. Chuev, and F. Bijkerk. "Specular reflection intensity modulated by grazing-incidence diffraction in a wide angular range." Acta Crystallographica Section A Foundations and Advances 74, no. 5 (2018): 545–52. http://dx.doi.org/10.1107/s2053273318008963.

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Grazing-incidence X-ray diffraction (GID) is a well known technique for the characterization of crystal surfaces. A theoretical study has been performed of the sensitivity of GID to the structure of a crystal surface and distorted nanometre-thin surface layers. To simulate GID from crystals that have a complex subsurface structure, a matrix formalism of the dynamical diffraction theory has been applied. It has been found that the azimuthal rocking curves of a crystal that has a distorted subsurface, measured over a wide angular range, show asymmetric thickness oscillations with two distinguish

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44

Sorge, K. D., J. R. Thompson, T. C. Schulthess, et al. "Oriented, single domain Fe nanoparticle layers in single crystal yttria-stabilized zirconia." IEEE Transactions on Magnetics 37, no. 4 (2001): 2197–99. http://dx.doi.org/10.1109/20.951122.

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45

Weil, Matthias, Owen P. Missen, and Stuart J. Mills. "Dimorphism of [Bi₂O₂(OH)](NO₃) – the ordered Pna2₁ structure at 100 K." Acta Crystallographica Section E Crystallographic Communications 79, no. 12 (2023): 1223–27. http://dx.doi.org/10.1107/s205698902301023x.

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Анотація:

The re-investigation of [Bi2O2(OH)](NO3), dioxidodibismuth(III) hydroxide nitrate, on the basis of single-crystal X-ray diffraction data revealed an apparent structural phase transition of a crystal structure determined previously (space group Cmc21 at 173 K) to a crystal structure with lower symmetry (space group Pna21 at 100 K). The Cmc21 → Pna21 group–subgroup relationship between the two crystal structures is klassengleiche with index 2. In contrast to the crystal structure in Cmc21 with orientational disorder of the nitrate anion, disorder does not occur in the Pna21 structure. Apart from

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46

Goto, Ken, Akane Mori, Hidetoshi Nakahata, Rie Togashi, and Yoshinao Kumagai. "Growth of twin-free cubic In₂O₃(111) thick layers on c-plane sapphire substrates by halide vapor phase epitaxy." Japanese Journal of Applied Physics 60, no. 12 (2021): 125506. http://dx.doi.org/10.35848/1347-4065/ac328f.

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Abstract The growth of twin-free single-crystal cubic-indium oxide (c-In2O3) layers was investigated by halide vapor phase epitaxy on c-plane sapphire substrates with various off-axis angles. The growth rate of the c-In2O3 layer increased and twin formation was suppressed as the off-axis angle of the substrate was increased. A single-crystal c-In2O3(111) layer grown on a sapphire substrate with a 5° off-axis angle showed a room temperature carrier density and mobility of 1.4 × 1016 cm−3 and 232 cm2 V−1 s−1, respectively. Temperature-dependent Hall measurements of the layer revealed that the mo

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47

Krüger, Biljana, Hannes Krüger, Evgeny V. Galuskin, et al. "Aravaite, Ba2Ca18(SiO4)6(PO4)3(CO3)F3O: modular structure and disorder of a new mineral with single and triple antiperovskite layers." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 74, no. 6 (2018): 492–501. http://dx.doi.org/10.1107/s2052520618012271.

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The crystal structure of the new mineral aravaite Ba2Ca18(SiO4)6(PO4)3(CO3)F3O [R{\bar 3}m, a = 7.12550 (11), c = 66.2902 (13) Å, V = 2914.81 (8) Å3, Z = 3] was solved from single-crystal diffraction data, collected using synchrotron radiation at the X06DA beamline of the Swiss Light Source. The unit cell of this modular mineral contains six layers of {Ba(PO4)1.5(CO3)0.5}3.5− (T-layer), three triple antiperovskite layers (tAP) {(F2OCa12)(SiO4)4}4+, and three single antiperovskite layers (sAP) {(FCa6)(SiO4)2}3+. The structure refinement confirms a model with a layer sequence of T–sAP–T–tAP as a

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48

Ryu, Gihun, Zhiwei Hu, Chun-Fu Chang, et al. "Crystal Growth and Physical Properties of Sr4Co3O7.5+xCl2 Single Crystals (x ∼ 0.14)." Crystals 9, no. 12 (2019): 623. http://dx.doi.org/10.3390/cryst9120623.

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We report on the single crystal growth and physical properties of the triple-layer cobalt oxychloride Sr 4 Co 3 O 7 . 5 + x Cl 2 (x∼ 0.14) with 4-3-10 Ruddlesden–Popper type structure that was synthesized by a KCl-SrCl 2 flux method. The crystal structure was determined by means of single crystal X-ray diffraction. In this quasi two dimensional (2D) material two pyramidal CoO 5 layers and a central Co oxide layer with random oxygen deficiencies are forming the layered Co oxide blocks. These blocks are separated by Cl − -ions which are interacting via Van der Waals forces, thus, enhancing the q

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49

Bragin, A. V., D. V. Pyanzin, R. I. Sidorov та D. A. Skvortsov. "Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network". Computer Optics 44, № 4 (2020): 653–59. http://dx.doi.org/10.18287/2412-6179-co-660.

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Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them. A method is proposed for recognizing and analyzing a dislocation structure of single crystal silicon carbide based on the use of optical microscopy and a direct distribution neural network. The method was tested on homoepitaxial lay-ers of 4H-polytype silicon carbide. Software has been developed that allows building maps of the dislocation structure distribution over the surface of single crystal silicon carbide. The software was tested on

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50

Luzanov, V. A. "Preparation of Single-Crystal Zinc Oxide Films on a Metal Sublayer." Радиотехника и электроника 68, no. 5 (2023): 470–71. http://dx.doi.org/10.31857/s0033849423050108.

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To increase the efficiency of devices based on piezoelectric transducers made of zinc oxide, it is proposed to use single-crystal layers of platinum as the bottom electrode. Epitaxial single-crystal films of zinc oxide on metal have been obtained. It is shown that this combination of layers makes it possible to minimizethe mismatch in the lattice parameters of the film and substrate, which significantly improves the quality of the obtained piezoelectric film.

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