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Добірка наукової літератури з теми "Surface Activated Bonding"

Автор: Grafiati

Опубліковано: 19 жовтня 2024

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Статті в журналах з теми "Surface Activated Bonding"

1

Takeuchi, Kai, Junsha Wang, Beomjoon Kim, Tadatomo Suga, and Eiji Higurashi. "Room temperature bonding of Au assisted by self-assembled monolayer." Applied Physics Letters 122, no. 5 (2023): 051603. http://dx.doi.org/10.1063/5.0128187.

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The surface activated bonding (SAB) technique enables room temperature bonding of metals, such as Au, by forming metal bonds between clean and reactive surfaces. However, the re-adsorption on the activated surface deteriorates the bonding quality, which limits the applicability of SAB for actual packaging processes of electronics. In this study, we propose and demonstrate the prolongation of the surface activation effect for room temperature bonding of Au by utilizing a self-assembled monolayer (SAM) protection. While the bonding without SAM fails after exposure of the activated Au surface to

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2

Lomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, et al. "Soft Surface Activated Bonding of Hydrophobic Silicon Substrates." ECS Meeting Abstracts MA2023-02, no. 33 (2023): 1601. http://dx.doi.org/10.1149/ma2023-02331601mtgabs.

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Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards (1). Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon bonding with SAB is quantified to better understand bonding mechanisms. With very low dose and acceleration activation parameters, the surface preparation prior to bondi

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3

ODA, Tomohiro, Tomoyuki ABE, and Isao KUSUNOKI. "Wafer Bonding by Surface Activated Method." Shinku 49, no. 5 (2006): 310–12. http://dx.doi.org/10.3131/jvsj.49.310.

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4

Lomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, et al. "Soft Surface Activated Bonding of Hydrophobic Silicon Substrates." ECS Transactions 112, no. 3 (2023): 139–45. http://dx.doi.org/10.1149/11203.0139ecst.

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Анотація:

Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards. This technique has been recognized by the scientific community for more than two decades now and was used for numerous reviewed applications. Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon after SAB bonding is quantified

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5

Yang, Song, Ningkang Deng, Yongfeng Qu, et al. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its

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6

Yang, Song, Ningkang Deng, Yongfeng Qu, et al. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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Анотація:

In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its

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7

Yang, Song, Ningkang Deng, Yongfeng Qu, et al. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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Анотація:

In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its

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8

Suga, Tadatomo, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, and Kenichi Iguchi. "Silicon carbide wafer bonding by modified surface activated bonding method." Japanese Journal of Applied Physics 54, no. 3 (2015): 030214. http://dx.doi.org/10.7567/jjap.54.030214.

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9

He, Ran, Masahisa Fujino, Akira Yamauchi, and Tadatomo Suga. "Novel hydrophilic SiO2wafer bonding using combined surface-activated bonding technique." Japanese Journal of Applied Physics 54, no. 3 (2015): 030218. http://dx.doi.org/10.7567/jjap.54.030218.

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10

SUGA, Tadatomo. "Low Temperature Bonding for 3D Integration-Surface Activated Bonding (SAB)." Hyomen Kagaku 35, no. 5 (2014): 262–66. http://dx.doi.org/10.1380/jsssj.35.262.

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