Academic literature on the topic '1/f noise spectroscopy'

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Dissertations / Theses on the topic "1/f noise spectroscopy"

1

Hassis, Wala. "Etude de structures avancées pour la détection IR quantique à haute température." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY013/document.

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La détection IR quantique met classiquement en jeu l'absorption de photons dans le matériau semi-conducteur II-VI CdHgTe. Cet alliage présente la particularité de permettre un ajustage du gap du semi-conducteur aux longueurs d'onde couvrant toute la gamme IR en jouant simplement sur la composition de l'alliage, ce qui en fait un matériau de choix. Cependant,les petits gaps en jeu ici imposent un refroidissement des plans focaux à des températures généralement cryogéniques (typiquement la centaine de Kelvins). Ce refroidissement représente naturellement une limite importante dans l'exploitation
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Andreev, Alexey. "Šumová spektroskopie detektorů záření." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233425.

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Kadmium telurid je velmi důležitý materiál jak základního, tak i aplikovaného výzkumu. Je to dáno zejména jeho výhodnými elektronickými, optickými a strukturními vlastnostmi, které ho předurčují pro náročné technické aplikace. Dnes se hlavně používá pro jeho vysoké rozlišení k detekci a X-záření. Hlavní výhodou detektorů na bázi CdTe je, že nepotřebují chlazení a mohou spolehlivě fungovat i při pokojové teplotě. To způsobuje efektivnější interakce fotonů než je tomu u Si nebo jiných polovodičových materiálů. Obsahem této práce byla analýza a interpretace výsledků získaných studiem šumových a
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3

Toro, Clemente. "Improved 1/f noise measurements for microwave transistors." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000371.

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4

Toro, Clemente Jr. "Improved 1/f Noise Measurements for Microwave Transistors." Scholar Commons, 2004. https://scholarcommons.usf.edu/etd/1271.

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Minimizing electrical noise is an increasingly important topic. New systems and modulation techniques require a lower noise threshold. Therefore, the design of RF and microwave systems using low noise devices is a consideration that the circuit design engineer must take into account. Properly measuring noise for a given device is also vital for proper characterization and modeling of device noise. In the case of an oscillator, a vital part of a wireless receiver, the phase noise that it produces affects the overall noise of the system. Factors such as biasing, selectivity of the input and outp
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Gesley, Mark Alan. "Spectral analysis of field emission flicker (1/f) noise." Full text open access at:, 1985. http://content.ohsu.edu/u?/etd,85.

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Haigh, Mary K. "1/f noise in mercury cadmium telluride semiconductor diodes." Thesis, Heriot-Watt University, 2005. http://hdl.handle.net/10399/200.

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7

Gross, Blaine Jeffrey. "1/f noise in MOSFETs with ultrathin gate dielectrics." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/13192.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.<br>Includes bibliographical references (p. 176-184).<br>by Blaine Jeffrey Gross.<br>Ph.D.
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8

Jong, Yeung-dong. "Fiber-optic interferometer for high 1/f noise environments /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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9

Tobias, David Andrew. "1/f noise and Luttinger liquid phenomena in carbon nanotubes." College Park, Md. : University of Maryland, 2007. http://hdl.handle.net/1903/7334.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2007.<br>Thesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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10

Siabi-Shahrivar, Nasser. "A study of 1/f noise in polysilicon emitter transistors." Thesis, University of Southampton, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314728.

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