Relevant bibliographies by topics / 157 nm photolithography

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic '157 nm photolithography'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "157 nm photolithography"

1

Sarantopoulou, E., A. C. Cefalas, P. Argitis, and E. Gogolides. "Photoresist materials for 157-nm photolithography." Materials Science and Engineering: C 15, no. 1-2 (2001): 159–61. http://dx.doi.org/10.1016/s0928-4931(01)00307-1.

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Waterland, Robert L., Kerwin D. Dobbs, Amy M. Rinehart, Andrew E. Feiring, Robert C. Wheland, and Bruce E. Smart. "Quantum chemical modeling for 157 nm photolithography." Journal of Fluorine Chemistry 122, no. 1 (2003): 37–46. http://dx.doi.org/10.1016/s0022-1139(03)00078-2.

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Sarantopoulou, E., Z. Kollia, and A. C. Cefalas. "LiCaAlF6:Nd3+ crystal as optical material for 157 nm photolithography." Optics Communications 177, no. 1-6 (2000): 377–82. http://dx.doi.org/10.1016/s0030-4018(00)00588-5.

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Whitfield, Michael D., Stuart P. Lansley, Olivier Gaudin, Robert D. McKeag, Nadeem Rizvi, and Richard B. Jackman. "Diamond photodetectors for next generation 157-nm deep-UV photolithography tools." Diamond and Related Materials 10, no. 3-7 (2001): 693–97. http://dx.doi.org/10.1016/s0925-9635(00)00518-5.

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Cefalas, A. C., E. Sarantopoulou, P. Argitis, and E. Gogolides. "Mass spectroscopic and degassing characteristics of polymeric materials for 157 nm photolithography." Applied Physics A: Materials Science & Processing 69, no. 7 (1999): S929—S933. http://dx.doi.org/10.1007/s003390051561.

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Cheng, W. C., and L. A. Wang. "Phase masks working in 157 nm wavelength fabricated by immersion interference photolithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 6 (2003): 3078. http://dx.doi.org/10.1116/1.1625958.

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Markley, T. J., J. A. Marsella, E. A. Robertson, et al. "Wetting and dissolution studies of fluoropolymers used in 157 nm photolithography applications." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, no. 1 (2004): 140. http://dx.doi.org/10.1116/1.1637914.

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Sarantopoulou, E., Z. Kollia, and A. C. Cefalas. "YF3:Nd3+, Pr3+, Gd3+ wide band gap crystals as optical materials for 157-nm photolithography." Optical Materials 18, no. 1 (2001): 23–26. http://dx.doi.org/10.1016/s0925-3467(01)00124-0.

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French, Roger H., Robert C. Wheland, Weiming Qiu, et al. "Novel hydrofluorocarbon polymers for use as pellicles in 157 nm semiconductor photolithography: fundamentals of transparency." Journal of Fluorine Chemistry 122, no. 1 (2003): 63–80. http://dx.doi.org/10.1016/s0022-1139(03)00081-2.

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Feiring, Andrew E., Michael K. Crawford, William B. Farnham, et al. "Bis(fluoroalcohol) Monomers and Polymers: Improved Transparency Fluoropolymer Photoresists for Semiconductor Photolithography at 157 nm." Macromolecules 39, no. 4 (2006): 1443–48. http://dx.doi.org/10.1021/ma051984l.

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Dissertations / Theses on the topic "157 nm photolithography"

1

Pinnow, Matthew James. "Design and synthesis of materials for 157 nm photoresists applications." Thesis, 2005. http://repositories.lib.utexas.edu/bitstream/handle/2152/1689/pinnowm70635.pdf.

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Trinque, Brian C. "Synthesis, copolymerization studies and 157 nm photolithography applications of 2-trifluoromethylacrylates." Thesis, 2003. http://wwwlib.umi.com/cr/utexas/fullcit?p3116210.

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Chambers, Charles Ray. "Design, synthesis and testing of materials for 157 nm photolithography." Thesis, 2005. http://hdl.handle.net/2152/1522.

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Chambers, Charles Ray Willson C. G. "Design, synthesis and testing of materials for 157 nm photolithography." 2005. http://repositories.lib.utexas.edu/bitstream/handle/2152/1522/chambersjrc51708.pdf.

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Adams, Jacob Robert. "Organic materials development for advanced lithographic applications." Thesis, 2009. http://hdl.handle.net/2152/ETD-UT-2009-08-209.

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The microelectronics industry strives for continued reduction in feature sizes to allow increased computing speed and power. This calls for continuous development of new materials. During the shift to 157 nm photolithography, it was discovered that fluorinated materials were necessary to provide sufficient transparency. Material design and synthesis to incorporate fluorine bearing norbornane based materials through an alternate means of polymerization to those used in traditional lithographic materials will be presented. Step and Flash Imprint Lithography represents a low cost alternative t
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Conference papers on the topic "157 nm photolithography"

1

Chambers, Charles R., Shiro Kusumoto, Guen Su Lee, et al. "Dissolution inhibitors for 157-nm photolithography." In Microlithography 2003, edited by Theodore H. Fedynyshyn. SPIE, 2003. http://dx.doi.org/10.1117/12.485191.

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Kiba, Yukio, Shinya Hori, Osamu Miyahara, et al. "Defect analysis in 157-nm photolithography process." In SPIE's 27th Annual International Symposium on Microlithography, edited by Daniel J. C. Herr. SPIE, 2002. http://dx.doi.org/10.1117/12.473505.

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Lauth, Hans. "193/157 nm UV coatings for next generation photolithography – All aspects." In Optical Interference Coatings. OSA, 2001. http://dx.doi.org/10.1364/oic.2001.thb2.

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French, Roger H., Joseph S. Gordon, David J. Jones, et al. "Materials design and development of fluoropolymers for use as pellicles in 157-nm photolithography." In 26th Annual International Symposium on Microlithography, edited by Christopher J. Progler. SPIE, 2001. http://dx.doi.org/10.1117/12.435710.

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Lee, Kwangjoo, Steffen Jockusch, Nicholas J. Turro, et al. "157-nm pellicles for photolithography: mechanistic investigation of the deep-UV photolysis of fluorocarbons." In Microlithography 2004, edited by Bruce W. Smith. SPIE, 2004. http://dx.doi.org/10.1117/12.534381.

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Cefalas, Alkiviadis C., Evangelia Sarantopoulou, Z. Kollia, et al. "VUV spectroscopy of nominally pure and rare-earth ions doped LiCaAIF 6 single crystals as promising materials for 157 nm photolithography." In XI Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, edited by Alexander A. Kaplyanskii, Boris Z. Malkin, and Sergey I. Nikitin. SPIE, 2002. http://dx.doi.org/10.1117/12.475332.

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Morton, Richard G., Todd J. Embree, Zsolt Bor, and Chris K. Van Peski. "Optical damage testing of materials for use in 157-nm photolithographic systems." In 26th Annual International Symposium on Microlithography, edited by Christopher J. Progler. SPIE, 2001. http://dx.doi.org/10.1117/12.435648.

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Ballarotto, Vincent, Karen Siegrist, Ellen Williams, and William Vanderlinde. "A Study of Photoelectron Emission Microscopy Contrast Mechanisms Relevant to Microelectronics." In ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0047.

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Abstract We report on a quantitative investigation of doping-induced contrast and topography-induced contrast in photoelectron emission microscopy (PEEM). Calibration samples were fabricated using standard photolithography and focused ion beam writing to test both types of contrast. Using a near-threshold light source, we find that the doping-induced contrast increases monotonically with B concentration over the measured range of 1017 – 2x1020 cm-3. The variation in doping-induced contrast as incident photon energy is varied was also investigated. Optimal doping-induced contrast and PEEM sensi
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