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Journal articles on the topic '157 nm photolithography'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Sarantopoulou, E., A. C. Cefalas, P. Argitis, and E. Gogolides. "Photoresist materials for 157-nm photolithography." Materials Science and Engineering: C 15, no. 1-2 (2001): 159–61. http://dx.doi.org/10.1016/s0928-4931(01)00307-1.

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2

Waterland, Robert L., Kerwin D. Dobbs, Amy M. Rinehart, Andrew E. Feiring, Robert C. Wheland, and Bruce E. Smart. "Quantum chemical modeling for 157 nm photolithography." Journal of Fluorine Chemistry 122, no. 1 (2003): 37–46. http://dx.doi.org/10.1016/s0022-1139(03)00078-2.

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3

Sarantopoulou, E., Z. Kollia, and A. C. Cefalas. "LiCaAlF6:Nd3+ crystal as optical material for 157 nm photolithography." Optics Communications 177, no. 1-6 (2000): 377–82. http://dx.doi.org/10.1016/s0030-4018(00)00588-5.

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4

Whitfield, Michael D., Stuart P. Lansley, Olivier Gaudin, Robert D. McKeag, Nadeem Rizvi, and Richard B. Jackman. "Diamond photodetectors for next generation 157-nm deep-UV photolithography tools." Diamond and Related Materials 10, no. 3-7 (2001): 693–97. http://dx.doi.org/10.1016/s0925-9635(00)00518-5.

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5

Cefalas, A. C., E. Sarantopoulou, P. Argitis, and E. Gogolides. "Mass spectroscopic and degassing characteristics of polymeric materials for 157 nm photolithography." Applied Physics A: Materials Science & Processing 69, no. 7 (1999): S929—S933. http://dx.doi.org/10.1007/s003390051561.

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6

Cheng, W. C., and L. A. Wang. "Phase masks working in 157 nm wavelength fabricated by immersion interference photolithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 6 (2003): 3078. http://dx.doi.org/10.1116/1.1625958.

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7

Markley, T. J., J. A. Marsella, E. A. Robertson, et al. "Wetting and dissolution studies of fluoropolymers used in 157 nm photolithography applications." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, no. 1 (2004): 140. http://dx.doi.org/10.1116/1.1637914.

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8

Sarantopoulou, E., Z. Kollia, and A. C. Cefalas. "YF3:Nd3+, Pr3+, Gd3+ wide band gap crystals as optical materials for 157-nm photolithography." Optical Materials 18, no. 1 (2001): 23–26. http://dx.doi.org/10.1016/s0925-3467(01)00124-0.

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9

French, Roger H., Robert C. Wheland, Weiming Qiu, et al. "Novel hydrofluorocarbon polymers for use as pellicles in 157 nm semiconductor photolithography: fundamentals of transparency." Journal of Fluorine Chemistry 122, no. 1 (2003): 63–80. http://dx.doi.org/10.1016/s0022-1139(03)00081-2.

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10

Feiring, Andrew E., Michael K. Crawford, William B. Farnham, et al. "Bis(fluoroalcohol) Monomers and Polymers: Improved Transparency Fluoropolymer Photoresists for Semiconductor Photolithography at 157 nm." Macromolecules 39, no. 4 (2006): 1443–48. http://dx.doi.org/10.1021/ma051984l.

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11

Lee, Kwangjoo, Steffen Jockusch, Nicholas J. Turro, et al. "157 nm Pellicles (Thin Films) for Photolithography: Mechanistic Investigation of the VUV and UV-C Photolysis of Fluorocarbons." Journal of the American Chemical Society 127, no. 23 (2005): 8320–27. http://dx.doi.org/10.1021/ja0440654.

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12

Sarantopoulou, E., Z. Kollia, and A. C. Cefalas. "Wide band gap fluoride dielectric crystals doped with trivalent rare earth ions as optical materials for 157 nm photolithography." Microelectronic Engineering 53, no. 1-4 (2000): 105–8. http://dx.doi.org/10.1016/s0167-9317(00)00274-4.

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13

Casalboni, M., L. Dominici, V. Foglietti, et al. "Bragg Grating Optical Filters by UV Nanoimprinting." Journal of Nanomaterials 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/186429.

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Results on an optical waveguide filter operating in the near IR region are reported. The device consists of a hybrid sol-gel -based grating loaded waveguide, obtained through the merging of conventional photolithography and UV-nanoimprinting. Starting from submicrometric gratings, fabricated by electron beam lithography, a soft mould has been produced and the original structures were replicated onto sol-gel photosensitive films. A final photolithographic step allowed the production of grating-loaded channel waveguides. The devices were optically characterized by transmission measurements in th

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14

Blakey, Idriss, Graeme A. George, David J. T. Hill, et al. "XPS and19F NMR Study of the Photodegradation at 157 nm of Photolithographic-Grade Teflon AF Thin Films." Macromolecules 38, no. 10 (2005): 4050–53. http://dx.doi.org/10.1021/ma047436+.

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15

de Assumpção, T. A. A., M. A. Alvarado, M. I. Alayo, and L. R. P. Kassab. "Production and characterization of Tm3+/Yb3+ codoped pedestal-type PbO–GeO2 waveguides." Canadian Journal of Physics 92, no. 7/8 (2014): 597–601. http://dx.doi.org/10.1139/cjp-2013-0591.

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This work explores the production and characterization of pedestal-type active waveguides based on PbO–GeO2 (PGO) thin films codoped with Tm3+/Yb3+ rare earth ions. Silicon wafers containing around 1.7 μm of SiO2 thickness were used as substrate, and the pedestal structure was obtained by conventional photolithography and plasma etching in a reactive ion etching reactor. Plasma etching procedures were made in steps to reduce roughness at the laterals and sidewalls of waveguides. Around 0.5 μm of Tm3+/Yb3+ codoped PGO thin film was obtained by radio frequency magnetron sputtering deposition aft

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16

Biggs, M. J. P., R. G. Richards, S. McFarlane, C. D. W. Wilkinson, R. O. C. Oreffo, and M. J. Dalby. "Adhesion formation of primary human osteoblasts and the functional response of mesenchymal stem cells to 330 nm deep microgrooves." Journal of The Royal Society Interface 5, no. 27 (2008): 1231–42. http://dx.doi.org/10.1098/rsif.2008.0035.

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The surface microtexture of an orthopaedic device can regulate cellular adhesion, a process fundamental in the initiation of osteoinduction and osteogenesis. Advances in fabrication techniques have evolved to include the field of surface modification; in particular, nanotechnology has allowed for the development of experimental nanoscale substrates for investigation into cell nanofeature interactions. Here primary human osteoblasts (HOBs) were cultured on ordered nanoscale groove/ridge arrays fabricated by photolithography. Grooves were 330 nm deep and either 10, 25 or 100 μm in width. Adhesio

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17

Chen, Dazheng, Gang Fan, Hongxiao Zhang, et al. "Efficient Ni/Au Mesh Transparent Electrodes for ITO-Free Planar Perovskite Solar Cells." Nanomaterials 9, no. 7 (2019): 932. http://dx.doi.org/10.3390/nano9070932.

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Indium thin oxide (ITO)-free planar perovskite solar cells (PSCs) were fabricated at a low temperature (150 °C) in this work based on the transparent electrode of photolithography processed nickel/gold (Ni/Au) mesh and the high conductivity polymer, PH1000. Ultrathin Au was introduced to increase the conductivity of metal mesh, and the optimal hexagonal Ni (30 nm)/Au (10 nm) mesh (line width of 5 μm) shows a transmittance close to 80% in the visible light region and a sheet resistance lower than 16.9 Ω/sq. The conductive polymer PH1000 not only smooths the raised surface of the metal mesh but

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18

Niu, Fuzhou, Xifu Chen, Xuemei Niu, et al. "Integrated Immunomagnetic Bead-Based Microfluidic Chip for Exosomes Isolation." Micromachines 11, no. 5 (2020): 503. http://dx.doi.org/10.3390/mi11050503.

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Exosomes are essential early biomarkers for health monitoring and cancer diagnosis. A prerequisite for further investigation of exosomes is the isolation, which is technically challenging due to the complexity of body fluids. This paper presents the development of an integrated microfluidic chip for exosomes isolation, which combines the traditional immunomagnetic bead-based protocol and the recently emerging microfluidic approach, resulting in benefits from both the high-purity of the former and the automated continuous superiority of the latter. The chip was designed based on an S-shaped mic

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19

Reichmanis, Elsa, Omkaram Nalamasu, and Francis M. Houlihan. "Materials Challenges and Alternatives for Advanced Photolithographic Patterning: From 193 to 157 nm and Beyond." MRS Proceedings 636 (2000). http://dx.doi.org/10.1557/proc-636-d5.2.1.

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AbstractIn the last decade, major advances in fabricating electronic devices have placed increasing demands on microlithography, the technology used to generate today's integrated circuits. Within the next few years, a new form of lithography will be required that routinely produces features of less than 0.1 μ. As the exposing wavelength of light decreases to facilitate higher resolution imaging, the opacity of traditional materials precludes their use; and major research efforts to develop alternate materials are underway. Through understanding of materials structure and its relationship to d

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20

Zheng, Lei, Urs Zywietz, Tobias Birr, et al. "UV-LED projection photolithography for high-resolution functional photonic components." Microsystems & Nanoengineering 7, no. 1 (2021). http://dx.doi.org/10.1038/s41378-021-00286-7.

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AbstractThe advancement of micro- and nanostructuring techniques in optics is driven by the demand for continuous miniaturization and the high geometrical accuracy of photonic devices and integrated systems. Here, UV-LED projection photolithography is demonstrated as a simple and low-cost approach for rapid generation of two-dimensional optical micro- and nanostructures with high resolution and accuracy using standard optics only. The developed system enables the projection of structure patterns onto a substrate with 1000-fold demagnification. Photonic devices, e.g., waveguides and microring r

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21

Higashi, G. S., G. E. Blonder, and C. G. Fleming. "Surface Photochemically Activated Chemical Vapor Deposition of Patterned Aluminum Thin Films." MRS Proceedings 75 (1986). http://dx.doi.org/10.1557/proc-75-117.

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AbstractKrF excimer laser (248 nm) images of mask patterns have been Iused to photochemically activate tihe surface catalytic decomposition of triisobutylaluminum (TIBA). The activation step is shown to involve the photolysis of organoaluminum surface adlayers leading to the formation of reactive Al sites. These sites serve to selectively nucleate the thermal decomposition of TIBA which results in the growth of high quality Al filns (resistivities ∼5 μΩ-cm). The growth on the chemically inert surfaces of SiO2 and Al2O3 is extremely selective and results in patterns with resolutions ∼2 μm. To e

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22

Sato, Tetsuo. "High thermally stable hybrid materials for optical interconnects." MRS Proceedings 1359 (2011). http://dx.doi.org/10.1557/opl.2011.762.

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ABSTRACTOptical materials in the optical circuit board are required to overcome soldering process. In detail, the material should not have absorption and shape changes after several tens of seconds heating at around 250 °C. For such application field, we have developed a novel organic-inorganic hybrid material having a high thermal stability and low absorption at telecom wavelength.The hybrid material was designed to solvent less resin, which is free radical curable with heating at 150 °C or UV exposure at room temperature, for the sake of device fabrication activity. We demonstrated the waveg

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23

Matsuda, Hirofumi, Sachiko Ito, and Takashi Iijima. "Piezoelectric property investigation for sol-gel derived Bi4Ti3O12 thick films." MRS Proceedings 748 (2002). http://dx.doi.org/10.1557/proc-748-u14.1.

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ABSTRACTStrongly (117)-oriented Bi4Ti3O12 (BIT) thin (300 nm in thickness) and thick (900 nm in thickness) films were successfully synthesized from chemical solution and the piezoelectric and ferrelectric properties were studied. The chemical solution of Bi-acetate and Ti-iso-propoxide dissolved in 2-methoxyethanol was spin-coated on Pt(111)/Ti/SiO2/Si(001) substrate, pyrolysed at 450–600 °C and annealed at 600 °C. On 300-nm-thick BIT thin film, Pt top electrodes were deposited through a metal mask by RF-sputtering. For longitudinal piezoelectric displacement measurement in partially unconstra

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24

Hong, Hyesook, Wayne A. Anderson, Eunwha Lee, Huicheng Chang, Myunghee Na, and Hong Luo. "Low Temperature Processed Metal-Semiconductor-Metal Phtodetectors on ZnSe/SI-GaAs (100)." MRS Proceedings 487 (1997). http://dx.doi.org/10.1557/proc-487-523.

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AbstractLow temperature (LT) processed ZnSe MSM photodetectors can be used for detecting Gamma rays or X-rays using scintillation crystals in many space and medical applications. Metalsemiconductor-metal (MSM) photodetectors were fabricated on undoped ZnSe grown by molecular beam epitaxy (MBE) on semi-insulating (100) GaAs substrates. The MSM photodetectors consist of interdigitated metal fingers with 2 μm, 3 μm, and 4 μm spacing on one chip. Probimide and SiO2 thin films were deposited to aid the LT lift-off process before the pattern generation. An interdigitated structure was achieved by ph

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25

Sharma, Himani, and Zhigang Xiao. "Fabrication of Carbon Nanotube Field-Effect Transistors with Metal and Semiconductor Electrodes." MRS Proceedings 1057 (2007). http://dx.doi.org/10.1557/proc-1057-ii15-20.

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ABSTRACTCarbon nanotube field-effect transistors (CNTFETs) were fabricated with metal material (gold) and semiconductor material (bismuth telluride) as the source and drain materials. Highly-purified HiPCO-grown single-walled carbon nanotubes (CNTs) from Carbon Nanotechnologies, Inc. (CNI) were used for the fabrication of CNTFETs. The single-walled carbon nanotubes were ultrasonically dispersed in toluene and dimethylformamide (DMF) with trifluoroacetic acid (TFA), as co-solvent. Dielectrophoresis (DEP) method was used to deposit, align, and assemble carbon nanotubes (CNTs) to bridge the gap b

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26

Lee, Jin-Hyung, Hyun-Woo Lim, Jin-Goo Park, Eun-Kyu Lee, and Yangsun Kim. "Effect of Polymer Substrates on Nano Scale Hot Embossing." MRS Proceedings 782 (2003). http://dx.doi.org/10.1557/proc-782-a5.50.

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ABSTRACTHot embossing has been widely accepted as an alternative to photolithography in generating patterns on polymer substrates. The optimization of embossing process should be accomplished based on polymer surface properties. Therefore, in this paper, polymers with different surface characteristic were selected and the surface properties of each polymers such as surface energy and adhesion force were investigated by contact angle and AFM. Based on these results, the imprinted nano patterns were compared. Silicon molds with nano size patterns were fabricated by e-beam direct writing. Molds w

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27

Xu, Yifan, Paul R. Berger, Jai Cho, and Richard B. Timmons. "High-k Polymerized Dichlorotetramethyldisiloxane Films Deposited by Radio Frequency Pulsed Plasma for Gate Dielectrics in Polymer Field Effect Transistors." MRS Proceedings 870 (2005). http://dx.doi.org/10.1557/proc-870-h1.3.

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AbstractPolymerized dichlorotetramethyldisiloxane (DCTMDS) films deposited by radio frequency pulsed plasma polymerization (PPP) demonstrated very high dielectric constants for an organic-based system, in the range of 7 to 10. The high dielectric constants of PPP DCTMDS films are due to the high polarizability of the DCTMDS monomer. The pulsed plasma duty cycle (ON/OFF) resulted in higher dielectric constant DCTMDS films for higher duty cycles. The variation of dielectric constants does not show any trend with varying film thicknesses, indicating that the thickness of the deposited films is no

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