Relevant bibliographies by topics / 1D Poisson-Schrödinger

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  1. Journal articles
  2. Dissertations / Theses

Academic literature on the topic '1D Poisson-Schrödinger'

Author: Grafiati
Published: 4 June 2021
Last updated: 11 February 2022

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Journal articles on the topic "1D Poisson-Schrödinger"

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Hebal, H., Z. Koziol, S. B. Lisesivdin, and R. Steed. "General-purpose open-source 1D self-consistent Schrödinger-Poisson Solver: Aestimo 1D." Computational Materials Science 186 (January 2021): 110015. http://dx.doi.org/10.1016/j.commatsci.2020.110015.

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BONNAILLIE-NOËL, Virginie, Francis NIER, and Yassine PATEL. "Far from equilibrium steady states of 1D-Schrödinger-Poisson systems with quantum wells II." Journal of the Mathematical Society of Japan 61, no. 1 (2009): 65–106. http://dx.doi.org/10.2969/jmsj/06110065.

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Bonnaillie-Noël, V., F. Nier, and Y. Patel. "Far from equilibrium steady states of 1D-Schrödinger–Poisson systems with quantum wells I." Annales de l'Institut Henri Poincare (C) Non Linear Analysis 25, no. 5 (2008): 937–68. http://dx.doi.org/10.1016/j.anihpc.2007.05.007.

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Vishvakarma, S. K., A. K. Saxena, and S. Dasgupta. "Analytical Modeling of Symmetric Double Gate (SDG) MOSFET Using 1D Schrödinger-Poisson Equation Solution." Journal of Nanoelectronics and Optoelectronics 4, no. 3 (2010): 353–61. http://dx.doi.org/10.1166/jno.2009.1051.

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FOSSUM, JERRY G. "A SIMULATION-BASED PREVIEW OF EXTREMELY SCALED DOUBLE-GATE CMOS DEVICES AND CIRCUITS." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 563–72. http://dx.doi.org/10.1142/s0129156402001460.

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This paper gives a simulation-based preview of device-design issues and performance of extremely scaled DG CMOS. A suite of simulation tools, including a 2D numerical device simulator, a 1D numerical Poisson-Schrödinger solver, and a generic, physics/process-based DG MOSFET compact model in Spice, is applied to both asymmetrical-and symmetrical-gate DG CMOS devices and circuits to provide physical insight at the device and circuit levels. The results give added motivation as well as preliminary guidance for the development of DG CMOS.
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Bouneb, I., and F. Kerrour. "Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Software." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 4 (2018): 2014. http://dx.doi.org/10.11591/ijece.v8i4.pp2014-2020.

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In structures with GaAs, which are the structures most used, because of their physical and electronic proprieties, nevertheless seems a compromise between the increase of doping and reduced mobility. The use of quantum hetero structures can overcome this limitation by creating a 2D carrier gas. Using the COMSOL software this work present three models: the first model computes the electronic states for the heterojunction AlGaAs/GaAs in 1D dimension, the second model computes the electronic states for the heterojunction AlGaAs/GaAs but in 2D dimension (nanowire) and the third model we permitted the study of this hetero junction (steep) wich inevitably involves the resolution of the system of equations Schrödinger-Poisson due to quantum effects that occur at the interface. The validity of this model can be effectuated with a comparison of our results with the result of different models developed in the literature of the related work, from this point of view the validity of our model is confirmed.
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Kotani, Shinichi, and Fumihiko Nakano. "Poisson statistics for 1d Schrödinger operators with random decaying potentials." Electronic Journal of Probability 22 (2017). http://dx.doi.org/10.1214/17-ejp91.

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Kim, Young Mo, T. Markurt, Youjung Kim, et al. "Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface." Scientific Reports 9, no. 1 (2019). http://dx.doi.org/10.1038/s41598-019-52772-8.

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Abstract In order to explain the experimental sheet carrier density n2D at the interface of BaSnO3/LaInO3, we consider a model that is based on the presence of interface polarization in LaInO3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrödinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO3/LaInO3 heterinterfaces on the thickness of the LaInO3 layer and the La doping of the BaSnO3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO3 over 2–3 pseudocubic unit cells at the coherently strained interface.
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As, D. J., R. Kemper, C. Mietze, et al. "Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures." MRS Proceedings 1736 (2014). http://dx.doi.org/10.1557/opl.2014.944.

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ABSTRACTIn this contribution we report on the optical properties of cubic AlN/GaN asymmetric multi quantum wells (MQW) structures on 3C-SiC/Si (001) substrates grown by radio-frequency plasma-assisted molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) and spatially resolved cathodoluminescence (CL) at room temperature and at low temperature are used to characterize the optical properties of the cubic AlN/GaN MQW structures. An increasing CL emission intensity with increasing film thickness due to the improved crystal quality was observed. This correlation can be directly connected to the reduction of the linewidth of x-ray rocking curves with increasing film thickness of the c-GaN films. Defects like stacking faults (SFs) on the {111} planes, which also can be considered as hexagonal inclusions in the cubic crystal matrix, lead to a decrease of the CL emission intensity. With low temperature CL line scans also monolayer fluctuations of the QWs have been detected and the observed transition energies agree well with solutions calculated using a one-dimensional (1D) Schrödinger-Poisson simulator.
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10

Dawoodbhoy, Taha, Paul R. Shapiro, and Tanja Rindler-Daller. "Core-envelope haloes in scalar field dark matter with repulsive self-interaction: fluid dynamics beyond the de Broglie wavelength." Monthly Notices of the Royal Astronomical Society, July 2, 2021. http://dx.doi.org/10.1093/mnras/stab1859.

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Abstract Scalar Field Dark Matter (SFDM) comprised of ultralight bosons has attracted great interest as an alternative to standard, collisionless Cold Dark Matter (CDM) because of its novel structure-formation dynamics, described by the coupled Schrödinger-Poisson equations. In the free-field (“fuzzy”) limit of SFDM (FDM), structure is inhibited below the de Broglie wavelength, but resembles CDM on larger scales. Virialized haloes have “solitonic” cores of radius ∼λdeB, surrounded by CDM-like envelopes. When a strong enough repulsive self-interaction (SI) is also present, structure can be inhibited below a second length scale, λSI, with λSI > λdeB called the Thomas-Fermi (TF) regime. FDM dynamics differs from CDM because of quantum pressure, and SFDM-TF differs further by adding SI pressure. In the small-λdeB limit, however, we can model all three by fluid conservation equations for a compressible, γ = 5/3 ideal gas, with ideal gas pressure sourced by internal velocity dispersion and, for the TF regime, an added SI pressure, PSI∝ρ2. We use these fluid equations to simulate halo formation from gravitational collapse in 1D, spherical symmetry, demonstrating for the first time that SFDM-TF haloes form with cores the size of RTF, the radius of an SI-pressure-supported (n = 1)-polytrope, surrounded by CDM-like envelopes. In comparison with rotation curves of dwarf galaxies in the local Universe, SFDM-TF haloes pass the [“too-big-to-fail” + “core-cusp”]-test if RTF ≳ 1 kpc.
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Dissertations / Theses on the topic "1D Poisson-Schrödinger"

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Lundskog, Anders. "Characterization of AlGaN HEMT structures." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-9729.

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<p>During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. This work is an exploration of the electrical and structural properties of advanced HEMT structure containing AlN exclusionlayer and double heterojunctions. These small modifications had great impact on the electrical properties.</p><p>In this work, AlGaN HEMT structures grown on SiC substrates by a hot-wall MOCVD have been characterized for their properties using optical microscopy, scanning electron microscopy, transmission electron microscopy, capacitance/voltage, eddy-current resistivity, and by homebuilt epi-thickness mapping equipment.</p><p>A high electron mobility of 1700 [cm2/Vs] was achieved in an AlN exclusion-layer HEMT. A similar electron mobility of 1650 [cm2/Vs] was achieved in a combination of a double heterojunction and exclusion-layer structure. The samples had approximately the same electron mobility but with a great difference: the exclusion-layer version gave a sheet carrier density of 1.58*1013 [electrons/cm2] while the combination of double heterojunction and exclusion-layer gave 1.07*1013 [electrons/cm2]. A second 2DEG was observed in most structures, but not all, but was not stable with time.</p><p>The structures we grew during this work were also simulated using a one-dimensional Poisson-Schrödinger solver and the simulated electron densities were in fairly good agreement with the experimentally obtained. III-nitride materials, the CVD concept, and the onedimensional solver are shortly explained.</p>
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"Efficient Schrödinger-Poisson Solvers for Quasi 1D Systems That Utilize PETSc and SLEPc." Master's thesis, 2020. http://hdl.handle.net/2286/R.I.63056.

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abstract: The quest to find efficient algorithms to numerically solve differential equations isubiquitous in all branches of computational science. A natural approach to address this problem is to try all possible algorithms to solve the differential equation and choose the one that is satisfactory to one's needs. However, the vast variety of algorithms in place makes this an extremely time consuming task. Additionally, even after choosing the algorithm to be used, the style of programming is not guaranteed to result in the most efficient algorithm. This thesis attempts to address the same problem but pertinent to the field of computational nanoelectronics, by using PETSc linear solver and SLEPc eigenvalue solver packages to efficiently solve Schrödinger and Poisson equations self-consistently. In this work, quasi 1D nanowire fabricated in the GaN material system is considered as a prototypical example. Special attention is placed on the proper description of the heterostructure device, the polarization charges and accurate treatment of the free surfaces. Simulation results are presented for the conduction band profiles, the electron density and the energy eigenvalues/eigenvectors of the occupied sub-bands for this quasi 1D nanowire. The simulation results suggest that the solver is very efficient and can be successfully used for the analysis of any device with two dimensional confinement. The tool is ported on www.nanoHUB.org and as such is freely available.<br>Dissertation/Thesis<br>Masters Thesis Electrical Engineering 2020
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