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Journal articles on the topic '22~nm'

Author: Grafiati
Published: 25 May 2024
Last updated: 31 July 2025

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1

Bloomstein, T. M., Michael F. Marchant, Sandra Deneault, Dennis E. Hardy, and Mordechai Rothschild. "22-nm immersion interference lithography." Optics Express 14, no. 14 (2006): 6434. http://dx.doi.org/10.1364/oe.14.006434.

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2

Sadana, Devendra, Stephen W. Bedell, J. P. De Souza, et al. "CMOS Scaling Beyond 22 nm Node." ECS Transactions 19, no. 5 (2019): 267–74. http://dx.doi.org/10.1149/1.3119551.

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3

Buengener, Ralf, Carol Boye, Bryan N. Rhoads, et al. "Process Window Centering for 22 nm Lithography." IEEE Transactions on Semiconductor Manufacturing 24, no. 2 (2011): 165–72. http://dx.doi.org/10.1109/tsm.2011.2106807.

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4

Parker, Matthew. "A sub-terahertz transceiver in 22 nm FinFET." Nature Electronics 5, no. 3 (2022): 126. http://dx.doi.org/10.1038/s41928-022-00741-x.

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5

Kurd, Nasser, Muntaquim Chowdhury, Edward Burton, et al. "Haswell: A Family of IA 22 nm Processors." IEEE Journal of Solid-State Circuits 50, no. 1 (2015): 49–58. http://dx.doi.org/10.1109/jssc.2014.2368126.

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6

Huang, Ru, HanMing Wu, JinFeng Kang, et al. "Challenges of 22 nm and beyond CMOS technology." Science in China Series F: Information Sciences 52, no. 9 (2009): 1491–533. http://dx.doi.org/10.1007/s11432-009-0167-9.

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7

Shiotani, Hideaki, Shota Suzuki, Dong Gun Lee, et al. "Dual Grating Interferometric Lithography for 22-nm Node." Japanese Journal of Applied Physics 47, no. 6 (2008): 4881–85. http://dx.doi.org/10.1143/jjap.47.4881.

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8

Li, Zongru, Christopher Jarrett Elash, Chen Jin, et al. "Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies." Electronics 11, no. 11 (2022): 1757. http://dx.doi.org/10.3390/electronics11111757.

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Total ionizing dose (TID) effects from Co-60 gamma ray and heavy ion irradiation were studied at the 22-nm FD SOI technology node and compared with the testing results from the 28-nm FD SOI technology. Ring oscillators (RO) designed with inverters, NAND2, and NOR2 gates were used to observe the output frequency drift and current draw. Experimental results show a noticeable increased device current draw and decreases in RO frequencies where NOR2 ROs have the most degradation. As well, the functionality of a 256 kb SRAM block and shift-register chains were evaluated during C0-60 irradiation. SRA
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9

Seifert, N., B. Gill, S. Jahinuzzaman, et al. "Soft Error Susceptibilities of 22 nm Tri-Gate Devices." IEEE Transactions on Nuclear Science 59, no. 6 (2012): 2666–73. http://dx.doi.org/10.1109/tns.2012.2218128.

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10

Zhang, Bo, Min Zhang, and Tianhong Cui. "Low-cost shrink lithography with sub-22 nm resolution." Applied Physics Letters 100, no. 13 (2012): 133113. http://dx.doi.org/10.1063/1.3697836.

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11

Seaberg, Matthew D., Daniel E. Adams, Ethan L. Townsend, et al. "Ultrahigh 22 nm resolution coherent diffractive imaging using a desktop 13 nm high harmonic source." Optics Express 19, no. 23 (2011): 22470. http://dx.doi.org/10.1364/oe.19.022470.

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12

Jeong-Dong Choe, Chang-Sub Lee, Sung-Ho Kim, et al. "A 22-nm damascene-gate MOSFET fabrication with 0.9-nm EOT and local channel implantation." IEEE Electron Device Letters 24, no. 3 (2003): 195–97. http://dx.doi.org/10.1109/led.2003.811401.

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13

Brewer, Rachel M., En Xia Zhang, Mariia Gorchichko, et al. "Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors." IEEE Transactions on Nuclear Science 68, no. 5 (2021): 677–86. http://dx.doi.org/10.1109/tns.2021.3059594.

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14

Gao, Ping, Na Yao, Changtao Wang, et al. "Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens." Applied Physics Letters 106, no. 9 (2015): 093110. http://dx.doi.org/10.1063/1.4914000.

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15

Cao Zhen, 曹振, 李艳秋 Li Yanqiu, and 刘菲 Liu Fei. "Manufacturable Design of 16~22 nm Extreme Ultraviolet Lithographic Objective." Acta Optica Sinica 33, no. 9 (2013): 0922005. http://dx.doi.org/10.3788/aos201333.0922005.

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16

Chakraborty, Wriddhi, Khandker Akif Aabrar, Jorge Gomez, et al. "Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7, no. 2 (2021): 184–92. http://dx.doi.org/10.1109/jxcdc.2021.3131144.

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17

Chung, Shine C., Wen-Kuang Fang, and Fang-Hua Chen. "A 4Kx8 Innovative Fuse OTP on 22-nm FD-SOI." IEEE Journal of the Electron Devices Society 7 (2019): 837–45. http://dx.doi.org/10.1109/jeds.2019.2922711.

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18

Xiaobin Wang, Yiran Chen, Hai Li, D. Dimitrov, and H. Liu. "Spin Torque Random Access Memory Down to 22 nm Technology." IEEE Transactions on Magnetics 44, no. 11 (2008): 2479–82. http://dx.doi.org/10.1109/tmag.2008.2002386.

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19

Rusu, Stefan, Harry Muljono, David Ayers, et al. "A 22 nm 15-Core Enterprise Xeon® Processor Family." IEEE Journal of Solid-State Circuits 50, no. 1 (2015): 35–48. http://dx.doi.org/10.1109/jssc.2014.2368933.

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20

Fukushima, Yasuyuki, Yuya Yamaguchi, Takafumi Iguchi, et al. "Development of interference lithography for 22 nm node and below." Microelectronic Engineering 88, no. 8 (2011): 1944–47. http://dx.doi.org/10.1016/j.mee.2011.02.076.

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21

Xie, Peng, and Bruce W. Smith. "Scanning interference evanescent wave lithography for sub-22-nm generations." Journal of Micro/Nanolithography, MEMS, and MOEMS 12, no. 1 (2013): 013011. http://dx.doi.org/10.1117/1.jmm.12.1.013011.

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22

Naulleau, Patrick P., Christopher N. Anderson, Lorie-Mae Baclea-an, et al. "Pushing extreme ultraviolet lithography development beyond 22 nm half pitch." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 6 (2009): 2911. http://dx.doi.org/10.1116/1.3237092.

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23

Mohsen, Ali, Adnan Harb, Nathalie Deltimple, and Abraham Serhane. "28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I." Circuits and Systems 08, no. 04 (2017): 93–110. http://dx.doi.org/10.4236/cs.2017.84006.

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24

Mohsen, Ali, Adnan Harb, Nathalie Deltimple, and Abraham Serhane. "28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II." Circuits and Systems 08, no. 05 (2017): 111–21. http://dx.doi.org/10.4236/cs.2017.85007.

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25

Brown, J., and Z. Zuo. "Renal receptors for atrial and C-type natriuretic peptides in the rat." American Journal of Physiology-Renal Physiology 263, no. 1 (1992): F89—F96. http://dx.doi.org/10.1152/ajprenal.1992.263.1.f89.

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Receptors for alpha-atrial natriuretic peptide (alpha-ANP) and C-type natriuretic peptide [CNP-(1-22)] were quantified in kidneys from adult Wistar rats by in vitro autoradiography. 125I-labeled alpha-ANP (100 pM) bound reversibly to glomeruli, outer medullary vasa recta, and inner medulla with an apparent dissociation constant (Kd) of 3–6 nM. The presence of 10 microM des-[Gln18,Ser19,Gly20,Leu21,Gly22]ANP-(4– 23) (C-ANP), a specific ligand of the ANPR-C subtype of alpha-ANP receptor, inhibited approximately 50% of the glomerular binding of 125I-alpha-ANP, and this moiety of glomerular bindin
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26

Jeevan, B., and K. Sivani. "Design of 0.8V, 22 nm DG-FinFET based efficient VLSI multiplexers." Microelectronics Journal 113 (July 2021): 105059. http://dx.doi.org/10.1016/j.mejo.2021.105059.

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27

Freeman, G., P. Chang, E. R. Engbrecht, et al. "Performance-optimized gate-first 22-nm SOI technology with embedded DRAM." IBM Journal of Research and Development 59, no. 1 (2015): 5:1–5:14. http://dx.doi.org/10.1147/jrd.2014.2380252.

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28

Xu, Peng, Yinghua Piao, Liang Ge, et al. "Investigation of Novel Junctionless MOSFETs for Technology Node Beyond 22 nm." ECS Transactions 44, no. 1 (2019): 33–39. http://dx.doi.org/10.1149/1.3694293.

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29

Schmidt, Matthias, Martin J. Suess, Angelica D. Barros, et al. "A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs." IEEE Electron Device Letters 35, no. 3 (2014): 300–302. http://dx.doi.org/10.1109/led.2014.2300865.

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30

Sze-Ann Wu, Yi-Lung Cheng, Chia-Yang Wu, and Wen-Hsi Lee. "A Study of Cu/CuMn Barrier for 22-nm Semiconductor Manufacturing." IEEE Transactions on Device and Materials Reliability 14, no. 1 (2014): 286–90. http://dx.doi.org/10.1109/tdmr.2013.2262525.

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31

Holmes, Steven. "22-nm-node technology active-layer patterning for planar transistor devices." Journal of Micro/Nanolithography, MEMS, and MOEMS 9, no. 1 (2010): 013001. http://dx.doi.org/10.1117/1.3302125.

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32

Park, Joon-Min, Dai-Gyoung Kim, Joo-Yoo Hong, Ilsin An, and Hye-Keun Oh. "Anisotropic Resist Reflow Process Simulation for 22 nm Elongated Contact Holes." Japanese Journal of Applied Physics 47, no. 6 (2008): 4940–43. http://dx.doi.org/10.1143/jjap.47.4940.

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33

Kozawa, Takahiro, Seiichi Tagawa, Julius Joseph Santillan, and Toshiro Itani. "Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists." Japanese Journal of Applied Physics 47, no. 7 (2008): 5404–8. http://dx.doi.org/10.1143/jjap.47.5404.

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34

Mayeda, Jill, Donald Y. C. Lie, and Jerry Lopez. "Broadband Millimeter-Wave 5G Power Amplifier Design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT." Electronics 11, no. 5 (2022): 683. http://dx.doi.org/10.3390/electronics11050683.

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Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of 24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are presented in this work. First, a single-ended broadband PA that employs a third-order input matching network is designed in a 40 nm GaN/SiC HEMT (High Electron Mobility Transistor) technology. Good agreement between the measurement and post-layout parasitic extracted (PEX) electromagnetic (EM) simulation data is observed, and it achieves a measured 3-dB BW (bandwidth) of 18.0–40.3 GHz and >20% maximum PAE (power
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35

Wurm, Stefan. "EUV Lithography Development and Research Challenges for the 22 nm Half-pitch." Journal of Photopolymer Science and Technology 22, no. 1 (2009): 31–42. http://dx.doi.org/10.2494/photopolymer.22.31.

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36

Das, S., R. Yu, K. Cherkaoui, P. Razavi, and S. Barraud. "Performance of 22 nm Tri-Gate Junctionless Nanowire Transistors at Elevated Temperatures." ECS Solid State Letters 2, no. 8 (2013): Q62—Q65. http://dx.doi.org/10.1149/2.004308ssl.

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37

Benk, Markus P., Kenneth A. Goldberg, Antoine Wojdyla, et al. "Demonstration of 22-nm half pitch resolution on the SHARP EUV microscope." Journal of Vacuum Science & Technology B 33, no. 6 (2015): 06FE01. http://dx.doi.org/10.1116/1.4929509.

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38

Baklanov, Mikhail R., Evgeny A. Smirnov, and Larry Zhao. "Ultra Low Dielectric Constant Materials for 22 nm Technology Node and Beyond." ECS Transactions 35, no. 4 (2019): 717–28. http://dx.doi.org/10.1149/1.3572315.

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39

Seo, Soon-Cheon, Chih-Chao Yang, Miaomiao Wang, et al. "Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation." IEEE Electron Device Letters 31, no. 12 (2010): 1452–54. http://dx.doi.org/10.1109/led.2010.2078483.

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40

Yan, H., A. J. Bergren, R. McCreery, et al. "Activationless charge transport across 4.5 to 22 nm in molecular electronic junctions." Proceedings of the National Academy of Sciences 110, no. 14 (2013): 5326–30. http://dx.doi.org/10.1073/pnas.1221643110.

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41

Younkin, Todd R. "Extreme-ultraviolet secondary electron blur at the 22-nm half pitch node." Journal of Micro/Nanolithography, MEMS, and MOEMS 10, no. 3 (2011): 033004. http://dx.doi.org/10.1117/1.3607429.

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42

Wu, Banqiu. "Next-generation lithography for 22 and 16 nm technology nodes and beyond." Science China Information Sciences 54, no. 5 (2011): 959–79. http://dx.doi.org/10.1007/s11432-011-4227-6.

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43

Kozawa, Takahiro, Seiichi Tagawa, Julius Joseph Santillan, Minoru Toriumi, and Toshiro Itani. "Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication." Japanese Journal of Applied Physics 47, no. 6 (2008): 4465–68. http://dx.doi.org/10.1143/jjap.47.4465.

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44

Kim, Eugene, Andrea Steinbrück, Maria Teresa Buscaglia, Vincenzo Buscaglia, Thomas Pertsch, and Rachel Grange. "Second-Harmonic Generation of Single BaTiO3 Nanoparticles down to 22 nm Diameter." ACS Nano 7, no. 6 (2013): 5343–49. http://dx.doi.org/10.1021/nn401198g.

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45

Tawarayama, Kazuo, Hajime Aoyama, Kentaro Matsunaga, Shunko Magoshi, Yukiyasu Arisawa, and Taiga Uno. "Resolution Enhancement for Beyond-22-nm Node Using Extreme Ultraviolet Exposure Tool." Japanese Journal of Applied Physics 49, no. 6 (2010): 06GD01. http://dx.doi.org/10.1143/jjap.49.06gd01.

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46

Acri, G., F. Podevin, E. Pistono, et al. "A Millimeter-Wave Miniature Branch-Line Coupler in 22-nm CMOS Technology." IEEE Solid-State Circuits Letters 2, no. 6 (2019): 45–48. http://dx.doi.org/10.1109/lssc.2019.2930197.

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47

Huang, Mingjing, and Xiaoyong He. "A Reconfigurable Analog Baseband for Multistandard Wireless Receivers in 22-nm CMOS." Journal of Physics: Conference Series 2613, no. 1 (2023): 012024. http://dx.doi.org/10.1088/1742-6596/2613/1/012024.

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Abstract This paper presents a low noise, and high linearity reconfigurable receiver (RX) analog baseband (ABB) with tunable bandwidth (BW) and gain for multi-standard applications. The designed ABB consists of a programmable gain amplifier (PGA) and a second-order active RC low-pass filter (LPF) with cutoff frequency range from 0.7 MHz–10 MHz, whereas the gain could be tuned between 0 dB and 49 dB. The proposed ABB is implemented in 22 nm CMOS process. The post-simulation results show that the current consumption is 3.36 mA from 1 V supply and the area occupies 571×328 μm 2. The ABB achieves
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48

Haarig, Moritz, Albert Ansmann, Holger Baars, et al. "Depolarization and lidar ratios at 355, 532, and 1064 nm and microphysical properties of aged tropospheric and stratospheric Canadian wildfire smoke." Atmospheric Chemistry and Physics 18, no. 16 (2018): 11847–61. http://dx.doi.org/10.5194/acp-18-11847-2018.

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Abstract. We present spectrally resolved optical and microphysical properties of western Canadian wildfire smoke observed in a tropospheric layer from 5–6.5 km height and in a stratospheric layer from 15–16 km height during a record-breaking smoke event on 22 August 2017. Three polarization/Raman lidars were run at the European Aerosol Research Lidar Network (EARLINET) station of Leipzig, Germany, after sunset on 22 August. For the first time, the linear depolarization ratio and extinction-to-backscatter ratio (lidar ratio) of aged smoke particles were measured at all three important lidar wav
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49

Chiu, Ming-Jui, and Li-Kang Chu. "Quantifying the photothermal efficiency of gold nanoparticles using tryptophan as an in situ fluorescent thermometer." Physical Chemistry Chemical Physics 17, no. 26 (2015): 17090–100. http://dx.doi.org/10.1039/c5cp02620b.

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50

McCants, Carl E. "The IARPA Circuit Analysis Tools Program." EDFA Technical Articles 15, no. 4 (2013): 52–54. http://dx.doi.org/10.31399/asm.edfa.2013-4.p052.

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Abstract The semiconductor industry continues to scale microelectronics in accordance with Moore’s Law, as the minimum feature size on integrated circuits has decreased from 800 nm in 1993 to 90 nm in 2003 to 22 nm today. In addition, manufacturing advances include 3-D packaging, with multiple dice stacked in various configurations, and 3-D integrated circuits that use through-silicon vias or through-oxide vias to connect the various dice layers. The Intelligence Advanced Research Projects Activity (IARPA) Circuit Analysis Tools (CAT) program is developing tools and techniques to ensure that t
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