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Journal articles on the topic '2D FTMS'

Author: Grafiati
Published: 8 June 2024
Last updated: 31 July 2025

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1

Dowell, James A., William Vander Heyden, and Lingjun Li. "Rat Neuropeptidomics by LC−MS/MS and MALDI−FTMS: Enhanced Dissection and Extraction Techniques Coupled with 2D RP-RP HPLC." Journal of Proteome Research 5, no. 12 (2006): 3368–75. http://dx.doi.org/10.1021/pr0603452.

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2

Kim, Junghyun, Jihyun Park, Wonyoung Yoo, and Jinsoo Seo. "Chroma Feature Abstraction using Multiscale 2D-FTM and N-gram for Cover Song Search." KIISE Transactions on Computing Practices 24, no. 6 (2018): 318–23. http://dx.doi.org/10.5626/ktcp.2018.24.6.318.

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3

Hafiyyan, Qalbi, Azwa Nirmala, Murad MS, Sumiyattinah Sumiyattinah, Vivi Bachtiar, and Muhammad Yusuf Yusuf. "Application of Finite Difference Method in Simulating 2D Partial Dam-break Flow with an Obstacle." Indonesian Journal of Multidisciplinary Science 2, no. 12 (2023): 4181–90. http://dx.doi.org/10.55324/ijoms.v2i12.609.

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A numerical model capable of simulating the dam-break flow is required to reduce the detrimental impact on the downstream area of the dam. This study aims to see how the characteristics and patterns of flow due to partial dam failure and the presence of an obstacle in the floodplain. In real life, the obstacle can be considered as a building. In this research, a model based on the FTCS method was developed with the addition of a Hansen numerical filter. This model is known as the FTCS-Hansen model. The Hansen filter in this study is used to enhance the numerical of the model and reduce oscilla
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4

Mellivera, Avis, Khilmi Zain, Mohammad Bagus Adityawan, Dhemi Harlan, Mohammad Farid, and Bagus Pramono Yakti. "Development of FTCS Artificial Dissipation for Dam Break 2D Modelling." Jurnal Teknik Sipil 27, no. 1 (2020): 1. http://dx.doi.org/10.5614/jts.2020.27.1.1.

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5

Wang, Tao, Yinzhou Yan, Liye Zhu, et al. "High-Performance Flexible Transparent Electrodes Fabricated via Laser Nano-Welding of Silver Nanowires." Crystals 11, no. 8 (2021): 996. http://dx.doi.org/10.3390/cryst11080996.

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Silver nanowires (Ag-NWs), which possess a high aspect ratio with superior electrical conductivity and transmittance, show great promise as flexible transparent electrodes (FTEs) for future electronics. Unfortunately, the fabrication of Ag-NW conductive networks with low conductivity and high transmittance is a major challenge due to the ohmic contact resistance between Ag-NWs. Here we report a facile method of fabricating high-performance Ag-NW electrodes on flexible substrates. A 532 nm nanosecond pulsed laser is employed to nano-weld the Ag-NW junctions through the energy confinement caused
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6

Putri, Putu Indah Dianti, Rifqi Fauzan Iskandar, Mohammad Bagus Adityawan, Hadi Kardhana, and Dian Indrawati. "2D Shallow Water Model for Dam Break and Column Interactions." Journal of the Civil Engineering Forum 6, no. 3 (2020): 237. http://dx.doi.org/10.22146/jcef.54307.

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Dam break causes disastrous effects on the surrounding area, especially at the downstream, therefore, there is a need for accurate and timely predictions of dam break propagation to prevent both property damage and loss of life. This study aimed to determine the movement of dam-break flow in the downstream area by solving the Shallow Water Equations (SWE) or Saint Venant Equations which are based on the conservation of mass and momentum derived from Navier Stokes equation. The model was generated using a finite difference scheme which is the most common and simplest method for dam-break modeli
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7

Panuntun, Ilham Adi, Rida SN Mahmudah, Restu Widiatmono, and Denny Darmawan. "Simulasi Dinamika Fluida Dam Break 2D Menggunakan Metoda Beda Hingga Skema Forward Time Backward Scheme (FTBS)." Wahana Fisika 7, no. 1 (2022): 68–81. http://dx.doi.org/10.17509/wafi.v7i1.46974.

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8

Henry, Jerome, Nicolas Montavont, Yann Busnel, Romaric Ludinard, and Ivan Hrasko. "A Geometric Approach to Noisy EDM Resolution in FTM Measurements." Computers 10, no. 3 (2021): 33. http://dx.doi.org/10.3390/computers10030033.

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Metric Multidimensional Scaling is commonly used to solve multi-sensor location problems in 2D or 3D spaces. In this paper, we show that such technique provides poor results in the case of indoor location problems based on 802.11 Fine Timing Measurements, because the number of anchors is small and the ranging error asymmetrically distributed. We then propose a two-step iterative approach based on geometric resolution of angle inaccuracies. The first step reduces the effect of poor ranging exchanges. The second step reconstructs the anchor positions, starting from the distances of highest likel
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9

Yu, Kilho, Byoungwook Park, Geunjin Kim, et al. "Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics." Proceedings of the National Academy of Sciences 113, no. 50 (2016): 14261–66. http://dx.doi.org/10.1073/pnas.1606947113.

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Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like,
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10

Laussac, J. P., P. Demange, and M. T. Cung. "Zinc in immune function: The case of thymulin (FTS-Zn) and bestatin. A 2D-NMR approach." Journal of Inorganic Biochemistry 36, no. 3-4 (1989): 257. http://dx.doi.org/10.1016/0162-0134(89)84325-9.

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11

Fang, Fang, and Klee Irwin. "From the Fibonacci Icosagrid to E8 (Part I): The Fibonacci Icosagrid, an H3 Quasicrystal." Crystals 14, no. 2 (2024): 152. http://dx.doi.org/10.3390/cryst14020152.

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This paper introduces a new kind of quasicrystal by Fibonacci-spacing a multigrid of a certain symmetry, like H2, H3, T3, etc. Multigrids of a certain symmetry can be used to generate quasicrystals, but multigrid vertices are not a quasicrystal due to arbitrary closeness. By Fibonacci-spacing the grids, the structure transit into an aperiodic order becomes a quasicrystal itself. Unlike the quasicrystal generated by the dual-grid method, this kind of quasicrystal does not live in the dual space of the grid space. It is the grid space itself and possesses quasicrystal properties, except that its
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12

Kaesti, Edgie Yuda, Suwardi Suwardi, Ratna Widyaningsih, Muhammad Zakiy Yusrizal, and Wijaya Ananditya Rifqi. "Evaluation of the Hydraulic Fracturing Implementation at Well WEA-01 Layer A3." Journal of Petroleum and Geothermal Technology 4, no. 2 (2023): 1. http://dx.doi.org/10.31315/jpgt.v4i2.9834.

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The WEA-01 well produces in the A3 productive layer, talangakar formation with a layer thickness of 32.80 ft with a perforation interval of 4340.55 – 4360.24 ftMD where from petrophysical data this formation is dominated by sandstone with a permeability of 3 mD which is classified as low and a tight formation (Koesoemadinata, 1980) with 10% porosity. This is the basis for the stimulation of Hydraulic Fracturing. Hydraulic fracturing that has been implemented needs to be evaluated to find out whether the implementation has been carried out optimally or not.The method to be used in the evaluatio
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13

Bai, Xueyan, Daifeng Zou, Chihou Lei, Zhijian He, and Yunya Liu. "Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions." Applied Physics Letters 126, no. 16 (2025). https://doi.org/10.1063/5.0258003.

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The regulation of tunneling electroresistance (TER) in two-dimensional (2D) ferroelectric tunnel junctions (FTJs) is crucial for their practical applications. In this Letter, we introduce an innovative approach to manipulate TER by altering the interfacial contact barrier through polarization-induced modifications in interface transport properties. A comprehensive analysis of the electronic structures within heterostructures, consisting of a metallic TaSe2 monolayer and a ferroelectric Sc2CO2 layer, uncovers a dual modulation effect of ferroelectricity on both the Schottky barrier height and t
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14

Yang, Shuli, Lili Kang, Xiaohong Zheng, Peng Jiang, and Gaofeng Zhao. "Realizing tunneling electroresistance effect in the Au/h-BN/In2Se3/Au vertical ferroelectric tunnel junction." Journal of Chemical Physics 159, no. 13 (2023). http://dx.doi.org/10.1063/5.0166849.

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Two-dimensional (2D) ferroelectric tunnel junctions (FTJs) have great potential in the design of non-volatile memory devices due to the tunneling electroresistance (TER) effect and the fact that it is not constrained by critical thickness. Incorporation of 2D ferroelectric materials in realistic FTJs inevitably involves the contacts to the traditional three-dimensional (3D) metals. However, how to design the FTJs by combining the 2D ferroelectric materials with the 3D metals still needs to be studied. In this work, we design a vertical 3D FTJ by adopting the 3D metal Au as the left and right e
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15

Lee, Fang-Yi, Eh Tan, and Emmy T. Chang. "Stress evolution of fault-and-thrust belts in 2D numerical mechanical models." Frontiers in Earth Science 12 (June 11, 2024). http://dx.doi.org/10.3389/feart.2024.1415139.

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We employed numerical models to examine the dynamics of fold-and-thrust belts (FTBs), particularly focusing on the spatial and temporal interplay between stress variations and fault development. Our study explores the effects of variables such as layer thickness, basal friction, and surface diffusivity on the FTBs’ structural development, emphasizing the conditions under which frontal thrusts form. We found that fault activities within FTBs exhibit a cyclic behavior characterized by phases of initiation, quiescence, and reactivation. For over 95% of the total cycle duration, the frontal thrust
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16

Han, Ziqi, Chun-sheng Liu, Xiaohong Zheng, and Lei Zhang. "Giant tunneling electroresistance in 2D bilayer-In2Se3-based out-of-plane ferroelectric tunnel junction." Physical Chemistry Chemical Physics, 2023. http://dx.doi.org/10.1039/d3cp01942j.

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Ferroelectric tunnel junctions (FTJs) have great potential in nonvolatile memory devices and have been extensively studied in recent years. Compared with conventional FTJs based on perovskite-type oxide materials as the...
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17

Zhao, Xuanting, Yuqiang Zhang, Xingchao Chen, et al. "1D Silver Nanowires/2D Graphene Composite Flexible Transparent Electrodes Induced by Superwetting Transfer." Advanced Electronic Materials, August 2, 2024. http://dx.doi.org/10.1002/aelm.202400510.

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AbstractSilver nanowires (AgNWs) are promising materials for the fabrication of high‐performance flexible transparent electrodes (FTEs) due to their excellent optoelectronic properties, mechanical flexibility, and low‐cost solution processability. However, one serious obstacle that hinders the application of AgNWs‐based electrodes is the high contact resistance between AgNWs. Established methods for reducing contact resistance such as light‐induced welding, heat‐induced welding, and chemical welding require complex post‐treatment of the prepared AgNWs electrodes. Herein, a fully solution‐proce
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18

Wei, Dong, Gaofu Guo, Heng Yu, et al. "Giant tunneling resistance and robust switching behavior in ferroelectric tunnel junctions of WS2/Ga2O3 heterostructures: The influence of metal–semiconductor contacts." Journal of Applied Physics 136, no. 7 (2024). http://dx.doi.org/10.1063/5.0220243.

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The ferroelectric tunneling junctions (FTJs) are widely recognized as one of the non-volatile memories with significant potential. Ferroelectricity usually fades away as materials are thinned down below a critical value, and this problem is particularly acute in the case of shrinking device sizes, thus attracting attention to two-dimensional ferroelectric materials (2DFEMs). In this work, we designed 2D ferroelectric Ga2O3-based FTJs with out-of-plane polarization, and the influence of metal–semiconductor contact in the electrode region on the system is considered. Here, using density function
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19

Chen, Weipeng, Ruijia Zhang, Xia Yang, et al. "1D:2D Structured AgNW:MXene Composite Transparent Electrode with High Mechanical Robustness for Flexible Photovoltaics." Journal of Materials Chemistry C, 2022. http://dx.doi.org/10.1039/d2tc01178f.

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Flexible transparent electrodes (FTEs) are essential sections for wearable and other flexible optoelectronic devices. The application of traditional indium tin oxide (ITO) electrodes in flexible devices is limited by its...
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20

He, Shiying, Daifeng Zou, Chihou Lei, Zhijian He, and Yunya Liu. "Enhancement of tunneling electroresistance in metal/two-dimensional ferroelectric tunnel junctions: Route for polarization-modulated interface transport." Journal of Physics: Condensed Matter, September 13, 2024. http://dx.doi.org/10.1088/1361-648x/ad7acc.

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Abstract In fabricating ferroelectric tunnel junction (FTJ) devices, it is essential to employ low-resistance metals as electrodes interfacing with two-dimensional (2D) ferroelectric materials. For FTJs with a top contact configuration, two interfaces for charge transport are present, namely the vertical interface between the metal electrode and the 2D ferroelectric material, and the lateral interface between the
electrode and the central scattering region. These interfaces significantly influence the tunneling electroresistance (TER) of FTJs. However, there exists a notable deficiency
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21

Luo, Yingjie, Jiwei Chen, Aumber Abbas та ін. "Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In2Se3 Ferroelectric Tunnel Junctions". Advanced Functional Materials, 27 червня 2024. http://dx.doi.org/10.1002/adfm.202407253.

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AbstractFerroelectric tunnel junctions (FTJs) have gained substantial attention as emerging electronic devices such as nonvolatile memory and artificial synapse, owing to their low power consumption and nonvolatile properties. In this work, a 2D semiconductor (2DS)/α‐In2Se3/metal FTJ structure is proposed that combines a semiconductor ferroelectric material and a semiconducting electrode. The incorporation of 2DS not only enhances the barrier height modulation but also provides an effective approach to mitigate the thermionic current leakage. Notably, the proposed MoS2/α‐In2Se3/Ti FTJs exhibit
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22

Pena, Adrian, Bogdan Ostahie, and Cristian Radu. "Floquet topological phase transitions in 2D Su-Schrieffer-Heeger model: Interplay between time reversal symmetry breaking and dimerization." New Journal of Physics, January 21, 2025. https://doi.org/10.1088/1367-2630/adac84.

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Abstract In this paper, we present a theoretical analysis of 2D Su-Schrieffer-Heeger (SSH) model within the context
of Floquet topological insulators (FTIs). Generally speaking, FTIs are endowed with time reversal symmetry
(TRS) and its breaking by means of a time periodical process triggers a topological phase transition governed by
a Chern number. In our proposed model, the condition of TRS breaking is achieved by circularly polarized light
irradiation. The 2D SSH system represents actually a square lattice, where the first order neighbors hopping is
r
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23

Liu, Zifang, Pengfei Hou, Lizhong Sun, Evgeny Y. Tsymbal, Jie Jiang та Qiong Yang. "In-plane ferroelectric tunnel junctions based on 2D α-In2Se3/semiconductor heterostructures". npj Computational Materials 9, № 1 (2023). http://dx.doi.org/10.1038/s41524-022-00953-x.

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AbstractFerroelectric tunnel junctions (FTJs) have great potential for application in high-density non-volatile memories. Recently, α-In2Se3 was found to exhibit robust in-plane and out-of-plane ferroelectric polarizations at a monolayer thickness, which is ideal to serve as a ferroelectric component in miniaturized electronic devices. In this work, we design two-dimensional van der Waals heterostructures composed of an α-In2Se3 ferroelectric and a hexagonal IV–VI semiconductor and propose an in-plane FTJ based on these heterostructures. Our first-principles calculations show that the electron
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24

"Development of A 2D Numerical Model for Pollutant Transport using FTCS Scheme and Numerical Filter." Makara Journal of Technology 25, no. 3 (2021). http://dx.doi.org/10.7454/mst.v25i3.3966.

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25

Nag, Tanay, and Bitan Roy. "Anomalous and normal dislocation modes in Floquet topological insulators." Communications Physics 4, no. 1 (2021). http://dx.doi.org/10.1038/s42005-021-00659-4.

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AbstractElectronic bands featuring nontrivial bulk topological invariant manifest through robust gapless modes at the boundaries, e.g., edges and surfaces. As such this bulk-boundary correspondence is also operative in driven quantum materials. For example, a suitable periodic drive can convert a trivial insulator into a Floquet topological insulator (FTI) that accommodates nondissipative dynamic gapless modes at the interfaces with vacuum. Here we theoretically demonstrate that dislocations, ubiquitous lattice defects in crystals, can probe FTIs as well as unconventional π-trivial insulator i
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26

M.Dragoman, Aldrigo M., D.Dragoman, Iordanescu Sergiu, A.Dinescu, and M.Modreanu. "The Rise of Ferroelectricity at Nanoscale: Nanoelectronics is rediscovering the ferroelectricity." October 28, 2021. https://doi.org/10.1109/MNANO.2021.3098217.

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We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel nanoelectronics devices. First, we outline specific physical and electronic properties of ferroelectric materials, then we focus on two main classes of ferroelectrics based on hafnium oxide (HfO<sub>2</sub>) and 2D materials. The former exhibits unique characteristics, making it the target of subsequent discussions. Their remanent polarization, coercive field, permittivity, nanometric scale thickness (up to 10 nm), and CMOS compatibility distinguish HfO<sub>2</sub>&nbsp;compounds from any other ex
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