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Journal articles on the topic '4H-SiC'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Shilpa, A., S. Singh, and N. V. L. Narasimha Murty. "Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors." Journal of Instrumentation 17, no. 11 (2022): P11014. http://dx.doi.org/10.1088/1748-0221/17/11/p11014.

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Abstract Advancement in the growth of 4H-SiC with low micropipe densities (∼ 0.11 cm-2) in achieving high pure epitaxial layers, enabled the development of high-resolution 4H-SiC alpha particle Schottky radiation detectors for harsh environments. In particular, the study considers two types of 4H-SiC radiation detectors having Ni and Ti as Schottky contacts. They are fabricated by depositing Ni and Ti on 25 μm thick n-type 4H-SiC by epitaxially growing on 350 μm thick conducting SiC substrates. Electrical characterization and alpha spectral measurements performed on Ni/4H-SiC and Ti/4H-SiC SBD

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2

Liu, Xiaoshuang, Yazhe Wang, Xi Zhang, et al. "Crack healing behavior of 4H-SiC: Effect of dopants." Journal of Applied Physics 133, no. 14 (2023): 145704. http://dx.doi.org/10.1063/5.0140922.

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We investigate the crack-healing mechanism of 4H silicon carbide (4H-SiC) and reveal the effect of dopants on the crack-healing behavior of 4H-SiC. Vickers indentation tests and thermal annealing are utilized to generate cracks and heal cracks in 4H-SiC, respectively. High-temperature thermal annealing in the air atmosphere is found to be capable of effectively healing indentation-induced cracks and releasing indentation-induced stress in undoped 4H-SiC by the formation and viscous flow of glass phase SiO2. Nitrogen (N) doping is found to assist the atomic diffusion of 4H-SiC. The crack healin

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3

Yoneda, S., Tomoaki Furusho, H. Takagi, S. Ohta, and Shigehiro Nishino. "Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique." Materials Science Forum 483-485 (May 2005): 129–32. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.129.

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For preliminary step toward fabrication of MOSFET using 4H-SiC 8) 3 (03 prepared by sublimation method, epitaxial growth of device quality 4H-SiC on 4H-SiC (0001) 8.0° off substrate was carried out and investigated. Smooth and specular surface of 4H-SiC (0001) plane was obtained by optimum growth condition. And epitaxial growth on 4H-SiC 8) 3 (03 and ) 8 3 (03 substrates were carried out with optimum growth conditions of 4H-SiC (0001). Smooth and specular surface was obtained on 4H-SiC 8) 3 (03 and ) 8 3 (03 plane. Growth rate of epilayers of 4H-SiC (0001), 8) 3 (03 and ) 8 3 (03 face were sam

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4

Yang, Guang, Hao Luo, Jiajun Li, et al. "Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits." Journal of Semiconductors 43, no. 12 (2022): 122801. http://dx.doi.org/10.1088/1674-4926/43/12/122801.

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Abstract Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide (4H-SiC), which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers. In this work, we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations (TSDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) in 4H-SiC. In n-type 4H-SiC, the inclination angles of the etch pits of TSDs, TEDs and BPDs in molten-alkali etched 4H-SiC are in the r

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5

Furusho, Tomoaki, Ryota Kobayashi, Taro Nishiguchi, et al. "Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds." Materials Science Forum 527-529 (October 2006): 35–38. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.35.

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Growth of 4H-SiC bulk crystals on 4H-SiC {03-38} seeds was done. 4H-SiC {03-38} is obtained by inclining the c-plane toward <01-10> at a 54.7 degrees angle. Growth on the 4H-SiC {03-38} seed has the potential to achieve high quality crystals without micropipes and stacking faults. Micropipe-free c-plane 4H-SiC wafers were achieved by growth on the 4H-SiC {03-38} seed. A transmission X-ray topograph image of the micropipe free c-plane wafer revealed that there are no macroscopic defects with displacements.

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6

Alexander, Kazuaki Seki, Shigeta Kozawa, Yuji Yamamoto, Toru Ujihara, and Yoshikazu Takeda. "Polytype Stability of 4H-SiC Seed Crystal on Solution Growth." Materials Science Forum 679-680 (March 2011): 24–27. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.24.

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We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity dependence of the dominant grown polytype was similar to those of the sublimation growth and the CVD growth that 4H-SiC relatively grew stably on the C-face. Moreover, the polytype transition occurred during spiral growth. The 6H-SiC expanded to periphery overgrowing on the 4H-SiC. In contrast, there is no sign that 4H-SiC grew on 6H-SiC.

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7

Kojima, Kazutoshi, Akira Nakajima, Hisashi Yamada, and Shinsuke Harada. "(Invited) Improvement of Surface Morphology of Vicinal Off Angled 4H-SiC Epitaxial Wafer for GaN/SiC Hybrid Devices." ECS Meeting Abstracts MA2024-02, no. 36 (2024): 2525. https://doi.org/10.1149/ma2024-02362525mtgabs.

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Wide gap semiconductor materials like SiC, GaN, and Ga2O3 are well-known as one of key technologies for realizing carbon neutrality. Indeed, SiC devices are used in many applications including electric vehicles, train systems, and consumer products. AlGaN/GaN HEMT devices also used in low voltage power source like AC adopters and 5G telecommunication systems. However, both devices have still improved issues. For SiC devices, the performance of MOS interface at the gate structure is still a big issue. On the other hand, GaN has superior performance of MOS interface and HEMT structure on the gat

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8

Naik, Harsh, and T. Paul Chow. "Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs." Materials Science Forum 679-680 (March 2011): 678–81. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.678.

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The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.

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9

Moon, Jeong Hyun, Da Il Eom, Sang Yong No, et al. "Electrical Properties of the La₂O₃/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)₃ and H₂O." Materials Science Forum 527-529 (October 2006): 1083–86. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1083.

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The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime wa

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10

Yang, Xiao Li, Ya Ni Pan, Chao Gao, et al. "Development of High Quality 8 Inch 4H-SiC Substrates." Solid State Phenomena 344 (June 6, 2023): 41–46. http://dx.doi.org/10.4028/p-x44871.

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8 inch 4H-silicon carbide (SiC) development faces challenges first from obtaining high-quality 8 inch SiC seed substrate, then reducing grown-in crystal residual stress and defects in the following crystal growth process. Here we report the diameter expansion process from 6 inch 4H-SiC seed substrate to 8 inch 4H-SiC crystal. Based on simulation and experimental results, it is deduced that an optimized radial temperature gradient (RTG) zone in the range of 0.10-0.12 °C/mm is essential for high-quality and efficient SiC crystal diameter expansion. According to the RTG calculation, diameter expa

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11

Kinoshita, Akimasa, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, and Kazuo Arai. "Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height." Materials Science Forum 645-648 (April 2010): 893–96. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.893.

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It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC SBD. Furthermore, b of metal/4H-SiC SBD varies with annealing temperature. We fabricate 0.231mm2 SBD with Ti/SiC interface using Si-face and C-face 4H-SiC. These SBDs are annealed at several temperatures after a formation of the Ti/SiC interface. As a result, b of Ti/C-face 4H-SiC interface annealed at 400 oC is nearly equal to b of Ti/Si-face 4H-SiC interface annealed at 500 oC and the n-values of these SBDs are nearly equal to the ideal value (unity).

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12

Shao, Shi Qian, Wei Cheng Lien, Ayden Maralani, Jim C. Cheng, Kristen L. Dorsey, and Albert P. Pisano. "4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications." Materials Science Forum 821-823 (June 2015): 636–39. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.636.

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In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree

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13

Wang, Congcong, Siyu Wu, Zhenyu Jiang, and Yingjie Huang. "Study on schottky barrier of Cu/Graphene/4H-SiC interface based on first principles." Journal of Physics: Conference Series 2720, no. 1 (2024): 012001. http://dx.doi.org/10.1088/1742-6596/2720/1/012001.

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Abstract High stability 4H-SiC ohmic contact is currently a key technical challenge that silicon carbide devices urgently need to overcome. In the paper, the interfacial structures, atomic interactions and Schottky barrier height (SBH) of Cu/Graphene/4H-SiC were studied using the first-principles method. According to research, the SBH for Cu/G/4H-SiC is lower than the SBH for Cu/4H-SiC. The reasons for this phenomenon mainly include the following: 1. The graphene C atoms saturate the dangling bonds on the 4H-SiC surface and the influence of the metal-induced-gap-states (MIGS) at the interface

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14

Xu, Bei, Changjun Zhu, Xiaomin He, et al. "First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction." Advances in Condensed Matter Physics 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/8010351.

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First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics. The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction inte

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15

Sinelnik, A. V., and A. V. Semenov. "Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes." Condensed Matter Physics 24, no. 2 (2021): 23706. http://dx.doi.org/10.5488/cmp.24.23706.

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We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first Brillouin zone both in the generalized gradient approximation and taking into account quasiparticle effects according to the GW scheme. The calculated bandgaps obtained using the GW approximation Eg2H-SiC = 3.17 eV and Eg4H-SiC = 3.26 eV agree well with experimental values. The shape and values of total DOS are within agreement with calculations performed by

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16

Sun, Guo Sheng, Yong Mei Zhao, Liang Wang, et al. "In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD." Materials Science Forum 600-603 (September 2008): 147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.147.

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The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagra

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17

Yang, Guang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, and Rong Wang. "Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights." Journal of Semiconductors 45, no. 1 (2024): 012502. http://dx.doi.org/10.1088/1674-4926/45/1/012502.

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Abstract Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide (4H-SiC), which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals. However, the etching mechanism of 4H-SiC is limited misunderstood. In this letter, we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching, X-ray photoelectron spectroscopy (XPS) and first-principles investigations. The activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and

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18

Tupitsyn, Eugene Y., Arul Arjunan, Robert T. Bondokov, Robert M. Kennedy, and Tangali S. Sudarshan. "A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT." Materials Science Forum 483-485 (May 2005): 21–24. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.21.

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4H-SiC crystals were grown using the seeded sublimation technique (modified Lely technique) in the temperature range of 1950-2200°C. The nucleation of 4H-SiC on 6HSiC has been optimized and 4H-SiC crystals of 1cm thickness were grown using 6H-SiC seeds. a-face and c-face wafers obtained from the grown boules were characterized by KOH etching, X-ray diffraction, and Raman scattering studies. Complete polytypic homogeneity of 4H SiC was obtained during growth and it was found that the 6H to 4H transition occurs in three ways: 1) without a transition layer, 2) with thick 6H-SiC layer growth, and

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19

Tu, Rong, Chengyin Liu, Qingfang Xu, et al. "Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition." Coatings 12, no. 3 (2022): 329. http://dx.doi.org/10.3390/coatings12030329.

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SiC epitaxial wafers offer enormous potential for a wide range of telecom technologies due to their excellent properties. The experimental process was simulated by software, and the contour of gas flow velocity and raw material mass fraction inside the chamber were obtained. SiC films were epitaxially grown on 4H-SiC single crystalline substrates at different temperatures for one batch, using SiCl4, CH4, and H2 as precursors. With increasing temperature, the crystal phase changed from 4H-SiC at 1773 K to a mixture of 4H- and 3C-SiC, and then a mixture of 3C-SiC and graphite at higher than 1923

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20

Zhang, Mengyu, Jingtao Huang, Xiao Liu, Long Lin, and Hualong Tao. "Electronic Structure and High Magnetic Properties of (Cr, Co)-codoped 4H–SiC Studied by First-Principle Calculations." Crystals 10, no. 8 (2020): 634. http://dx.doi.org/10.3390/cryst10080634.

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The electronic structure and magnetic properties of 3d transition metal (Cr, Co)-codoped 4H–SiC were studied by density functional theory within GGA methods. The results show that all doped magnetic atoms have high magnetic properties in both Cr-doped and Co-doped 4H–SiC, resulting in the net magnetic moments of 3.03, 3.02 μ B for Si 35 CrC 36 and Si 35 CoC 36 . The electronic density of states reaches the peak at Fermi level, which is beneficial to the electronic transitions, indicating that Cr-doped 4H–SiC is a semi-metallic material. In addition, the magnetic properties of (Cr, Co)-codoped

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21

Громова, П. С., та Г. Г. Давыдов. "ОСОБЕННОСТИ РАДИАЦИОННОГО ПОВЕДЕНИЯ ВЫСОКОВОЛЬТНЫХ ПОЛУПРОВОДНИКОВЫХ ПРИБОРОВ НА 4H-SIC ПО ЭФФЕКТАМ НАКОПЛЕННОЙ ДОЗЫ И ОДИНОЧНЫМ ЭФФЕКТАМ ОТКАЗОВ". NANOINDUSTRY Russia 96, № 3s (2020): 609–11. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.609.611.

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Экспериментально определена область безопасной работы высоковольтных диодов Шоттки на структурах 4H-SiC иностранного производства. Исследована деградация 4H-SiC изделий при воздействии накопленной дозы ионизирующего излучения. Проведено сравнение с аналогичными данными для высоковольтных приборов кремния. The paper highlights safe operating area for several types of high-voltage 4H-SiC Schottky diodes. Degradation of electrical parameters has been studied experimentally for several types of 4H-SiC power devices. Comparison with Si power devices has been carried out.

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22

Naik, Harsh, and T. Paul Chow. "Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs." Materials Science Forum 679-680 (March 2011): 595–98. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.595.

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To study the mobility limiting mechanisms in (0001) 4H-SiC and 6H-SiC MOSFETs, physics based modeling of the inversion mobility of has been done. Two very different limiting mechanisms have been found for 4H-SiC and 6H-SiC MOSFETs. The mobility in 6H-SiC MOSFETs is limited by phonon scattering while the 4H-SiC MOSFET mobility is limited by Coulombic at low electric fields and surface roughness scattering at high electric fields.

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23

Eto, Kazuma, Hiromasa Suo, Tomohisa Kato, and Hajime Okumura. "Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping." Materials Science Forum 858 (May 2016): 77–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.77.

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Low resistivity p-type SiC bulk crystals were grown by the sublimation method with using aluminum and nitrogen co-doping. In the sublimation growth of 4H-SiC, to obtain low-resistive p-type crystals are not easy because of the instability of 4H-SiC polytype with highly Al-doping. We have grown < 90 mΩcm p-type 4H-SiC bulk crystals with the co-doping condition. The results of SIMS and Raman spectroscopy show that high concentration of nitrogen co-doping could be effective to the stabilization of 4H polytype with p-type SiC growth.

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24

Glembocki, Orest J., Marek Skowronski, S. M. Prokes, D. Kurt Gaskill, and Joshua D. Caldwell. "Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC." Materials Science Forum 527-529 (October 2006): 347–50. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.347.

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Bulk n+-4H-SiC wafers (n=1-2×1019 cm-3) containing annealing-induced stacking faults were examined by Raman scattering. The coupled plasmon-LO mode was observed to shift in a manner consistent with 1018 cm-3 doping in the 4H-SiC. Numerical simulations were performed using a self-consistent Poisson-Schrödinger solver and agree well with the experimental observations of carrier transfer from the 4H-SiC into the 3C-SiC stacking faults. The Raman data also shows that the 3C stacking faults induce a tensile strain on the surrounding 4H-SiC regions.

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Bai, Yun, Cheng Zhan Li, Hua Jun Shen, Yi Dan Tang, and Xin Yu Liu. "Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain." Materials Science Forum 858 (May 2016): 1036–39. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1036.

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The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural parameters of 4H-SiC phototransistor on the performance of the detectors is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC phototransistors detect UV light with a response wavelength below 380 nm. It is suggested that the base parameters are important to the responsivity of the 4H-SiC BJT. With optimized parameters the 4H-SiC UV phototransistor exhibits peak responsivity as high as 4617 A/W corresponding to a quantu

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26

Yamamoto, Yuji, Kazuaki Seki, Shigeta Kozawa, Alexander, S. Harada, and Toru Ujihara. "Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth." Materials Science Forum 717-720 (May 2012): 53–56. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.53.

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We introduce a method to grow 4H-SiC single polytype stably by controlling the surface morphology. The polytype transition on on-axis 4H-SiC C-face was investigated from a viewpoint of surface morphology of grown layers. At the area where several hillock-like structures grew adjacently, the polytype transition from 4H-SiC to 6H-SiC or 15R-SiC often occurred. Therefore, we tried a modified seeded method to suppress the formation of hillock-like structures. As a result, the hillock-like structure on the grown layer was dramatically reduced. Moreover, the ratio of 4H-SiC polytype to the whole gro

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27

Lim, Jang Kwon, Ludwig Östlund, Qin Wang, et al. "A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors." Materials Science Forum 717-720 (May 2012): 1207–10. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1207.

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This paper reports on fabrication and modeling of 4H- and 6H-SiC metal-semiconductor-metal (MSM) photodetectors (PDs). MSM PDs have been fabricated on 4H-SiC and 6H-SiC epitaxial layers, and their performance analyzed by MEDICI simulation and measurements. The simulations were also used to optimize the sensitivity by varying the width and spacing of the interdigitated electrodes. The fabricated PDs with 2 µm wide metal electrodes and 3 µm spacing between the electrodes exhibited, under UV illumination, a peak current to dark current ratio of 105 and 104 in 4H-SiC and 6H-SiC, respectively. The

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28

Seo, Han Seok, Ho Geun Song, Jeong Hyun Moon, et al. "Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM." Materials Science Forum 600-603 (September 2008): 151–54. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.151.

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Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was investigated. The growth rate of 4H-SiC was investigated as a function of the growth temperature and source flow rate. The FWHM values of epilayers as the growth temperature and source flow rate also investigated. The growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3.0 μm/h and the background doping level of 4H-SiC epilayer was mid 1015/cm3.

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29

Kusunoki, Kazuhiko, Kazuhito Kamei, Nobuyoshi Yashiro, Koji Moriguchi, and Nobuhiro Okada. "Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method." Materials Science Forum 679-680 (March 2011): 36–39. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.36.

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We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.

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Ryu, Sei Hyung, Sumi Krishnaswami, Mrinal K. Das, et al. "4H-SiC DMOSFETs for High Speed Switching Applications." Materials Science Forum 483-485 (May 2005): 797–800. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.797.

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Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4H-SiC device. Therefore, the total drain charge and switching losses are much lower for the 4H-SiC power device. A 2.3 kV, 13.5 mW-cm2 4H-SiC power DMOSFET with a device area of 2.1 mm x 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS

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Ettisserry, D. P., Neil Goldsman, Akin Akturk, and Aivars J. Lelis. "Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation – A First Principles Study." Materials Science Forum 858 (May 2016): 465–68. http://dx.doi.org/10.4028/www.scientific.net/msf.858.465.

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In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mob

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32

Noborio, Masato, Jun Suda, and Tsunenobu Kimoto. "High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces." Materials Science Forum 615-617 (March 2009): 789–92. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.789.

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P-channel MOSFETs have been fabricated on 4H-SiC (0001) face as well as on 4H-SiC (03-38) and (11-20) faces. The gate oxides were formed by thermal oxidation in dry N2O ambient, which is widely accepted to improve the performance of n-channel SiC MOSFETs. The p-channel SiC MOSFETs with N2O-grown oxides on 4H-SiC (0001), (03-38), and (11-20) faces show a channel mobility of 7 cm2/Vs, 11 cm2/Vs, and 17 cm2/Vs, respectively. From the quasi-static C-V curves measured by using gate-controlled diodes, the interface state density was calculated by an original method. The interface state density was t

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Li, Liang, Lei, et al. "Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer." Micromachines 10, no. 10 (2019): 629. http://dx.doi.org/10.3390/mi10100629.

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In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy (LRS) that the crystal quality of the epitaxial layer was good. The doping concentration and thickness of the epitaxial layer were measured by secondary ion mass spectrometry (SIMS) to be ~1.12 × 1019 cm−3 and ~1.1 μm, respectively. The 4H-SiC cantilever beam along crystal orientation was fabricated, and the fixed end of the cantilever beam wa

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34

Huang, Yuanchao, Rong Wang, Naifu Zhang, Yiqiang Zhang, Deren Yang, and Xiaodong Pi. "Effect of hydrogen on the unintentional doping of 4H silicon carbide." Journal of Applied Physics 132, no. 15 (2022): 155704. http://dx.doi.org/10.1063/5.0108726.

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High-purity semi-insulating (HPSI) 4H silicon carbide (4H-SiC) single crystals are critical semiconductor materials for fabricating GaN-based high-frequency devices. One of the major challenges for the growth of HPSI 4H-SiC single crystals is the unintentional doping of nitrogen (N) and boron (B). The addition of hydrogen has been supposed to mitigate unintentional doping. However, the underlying mechanism has not been well understood. In this work, the role of hydrogen in the growth of HPSI 4H-SiC single crystals is investigated by first-principles formation-energy calculations. We find that

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Rozé, Fabien, Toshiyuki Tabata, Sébastien Kerdilès, et al. "Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs." Solid State Phenomena 342 (May 25, 2023): 79–83. http://dx.doi.org/10.4028/p-94455v.

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A SiC MOSFET fabricated on a thin 15R-SiC layer on top of a 4H-SiC would benefit from both the higher inversion channel mobility of 15R-SiC and higher bulk mobility of 4H-SiC. In this work, a method based on Al implantation followed by UV laser annealing (UV-LA) to form 15R-SiC on 4H is shown. Evaluation of crystal quality and SiC polytype identification are performed by Raman spectroscopy. We show that UV-LA is able to grow 15R-SiC and cure the crystal damaged by ion implantation until a level close to the pristine substrate. This opens new perspectives for fabrication of SiC n-type MOSFETs.

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Tsuchida, Hidekazu, Isaho Kamata, Masahiko Ito, et al. "Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques." Materials Science Forum 778-780 (February 2014): 85–90. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.85.

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This paper introduces our recent challenges in fast 4H-SiC CVD growth and defect reduction. Enhanced growth rates in 4H-SiC epitaxial growth by high-speed wafer rotation and in a high-temperature gas source method promoting SiC bulk growth by increasing the gas flow velocity are demonstrated. Trials and results of deflecting threading dislocations by patterned C-face 4H-SiC epitaxial growth are also shown.

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Huang, Yuanchao, Yixiao Qian, Yiqiang Zhang, Deren Yang, and Xiaodong Pi. "Kick-out diffusion of Al in 4H-SiC: an ab initio study." Journal of Applied Physics 132, no. 1 (2022): 015701. http://dx.doi.org/10.1063/5.0096577.

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As a semiconductor with a wide bandgap, 4H silicon carbide (4H-SiC) has considerable potential for high-temperature and high-power devices. It is widely established that p-type 4H-SiC is formed predominantly by doping Al. Although Al diffusion in 4H-SiC is often negligible at low temperatures due to the tight bonding of Al in 4H-SiC, the diffusion coefficient of Al dramatically rises when the temperature is rather high. While diffusion is the most fundamental physical processes, the diffusion mechanism of Al in 4H-SiC remains unknown. Due to the large atomic radius of Al relative to the host S

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Sonde, Sushant, Carmelo Vecchio, Filippo Giannazzo, Rositza Yakimova, Emanuele Rimini, and Vito Raineri. "Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface." Materials Science Forum 679-680 (March 2011): 769–76. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.769.

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Local current transport across graphene/4H-SiC was studied with nanometric scale lateral resolution by Scanning Current Spectroscopy on both graphene grown epitaxially on 4H-SiC(0001) (EG-SiC) and graphene exfoliated from highly oriented pyrolitic graphite and deposited on 4H-SiC(0001) (DG-SiC). The study revealed that the Schottky barrier height (SBH) of EG/4H-SiC(0001) is lowered by ~0.49eV. This is explained in terms of Fermi-level pinning above the Dirac point in EG due to the presence of positively charged states at the interface between Si face of 4H-SiC and carbon-rich buffer layer. Fur

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Chen, Fan, Zebin Kong, Kunshu Wang, Linsheng Qin, and Yuan Liu. "Degradation mechanism of SiC diodes under thermal and irradiation stress." Journal of Physics: Conference Series 2851, no. 1 (2024): 012018. http://dx.doi.org/10.1088/1742-6596/2851/1/012018.

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Abstract Silicon carbide (SiC)-based diodes are widely used due to their high temperature resistance. In this paper, breakdown voltage of 4H-SiC JBS diodes and capacitance-voltage of 4H-SiC MOS capacitors with identical interfacial structure were both measured at high temperature to study their interfacial properties. By analyzing the variation of interfacial properties, the correlation between thermal stress and failure mode of 4H-SiC JBS diodes was further established to reveal their degradation mechanism. During initial high temperature storage, interfacial negative effective charge density

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Wilson, S., C. S. Dickens, J. Griffin, and M. G. Spencer. "Comparative Growth of AlN on Singular and Off-Axis 6H and 4H-SiC by MOCVD." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 344–50. http://dx.doi.org/10.1557/s1092578300002702.

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A comparison study of the growth of aluminum nitride (AlN) single crystal epitaxy on 6H-SiC and 4H-SiC substrates has been performed. The material has been characterized using atomic force microscopy (AFM) and reflective high energy electron diffraction (RHEED). AlN crystals were deposited on the following 6H-SiC substrates: singular with and without an initial SiC epilayer, and 3.5° off-axis with and without an initial SiC epilayer. AlN crystals were deposited on 8.0° off-axis 4H-SiC with and without initial SiC epilayers. AFM shows that the deposition of AlN on 6H-SiC and 4H-SiC with an init

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Zhong, Jiyuan, Jiapeng Chen, Hanqiang Wang, et al. "Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad." Crystals 13, no. 6 (2023): 869. http://dx.doi.org/10.3390/cryst13060869.

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4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a high-efficiency polishing of 4H-SiC wafers method by applying reactive nonaqueous fluids to self-sharpening fixed abrasive pads has been proposed in our former research works. Furthermore, to improve the material removal rate and reduce the surface roughness Sa value of 4H-SiC substrates of the Si face, the effect of organic acid, H2O2, and Triton X-100 i

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42

Okamoto, Dai, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, and Takashi Fuyuki. "Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs." Materials Science Forum 600-603 (September 2008): 747–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.747.

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This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.

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43

Hiyoshi, Toru, Takeyoshi Masuda, Keiji Wada, Shin Harada, and Yasuo Namikawa. "Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face." Materials Science Forum 740-742 (January 2013): 506–9. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.506.

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In this paper, we characterized MOS devices fabricated on 4H-SiC (0-33-8) face. The interface state density of SiO2/4H-SiC(0-33-8) was significantly low compared to that of SiO2/4H-SiC(0001). The field-effect channel mobility obtained from lateral MOSFET (LMOSFET) was 80 cm2/Vs, in spite of a high p-well concentration of 5x1017 cm-3 (implantation). The double implanted MOSFET (DMOSFET) fabricated on 4H-SiC(0-33-8) showed a specific on-resistance of 4.0 mΩcm2 with a blocking voltage of 890 V.

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44

Park, Jong Hwi, Tae Kyoung Yang, Il Soo Kim, et al. "Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter." Materials Science Forum 717-720 (May 2012): 17–20. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.17.

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The present research was focused to investigate various process parameters influenced on the large 4H-SiC crystal growth on a 6H-SiC seed by PVT method. The crucible diameter along horizontal axial direction and inserted graphite ring was modified to change the growth parameter like the temperature gradient. In the initial stage of growth, foreign polytypes such as 6H/4H were observed on 6H-SiC seed, indicating the growth temperature to be unstable on crystal surface. However, from the middle of growth step, 4H-SiC was successfully formed in the ingot with the modification of growth pressure a

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Aoki, Masahiko, Megumi Miyazaki, Taro Nishiguchi, Hiroyuki Kinoshita, and Masahiro Yoshimoto. "TEM Observation of the Polytype Transformation of Bulk SiC Ingot." Materials Science Forum 600-603 (September 2008): 365–68. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.365.

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This article describes the analysis of the polytype transformation of SiC ingot. We analyzed the sample by Raman spectroscopy and TEM observation. The result of the analysis shows the polytype is transformed from 4H-SiC to 6H-SiC, and then returned to 4H-SiC. We found that the direction of the c-axis is not the same as the growth direction of the ingot. And also we found the existence of 8H-SiC at the interface between 6H-SiC and 4H-SiC region by the selected area diffraction pattern and confirmed it by HR-TEM observation.

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46

Nagasawa, Hiroyuki, Yasuo Cho, Maho Abe, et al. "SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure." Solid State Phenomena 362 (August 27, 2024): 33–40. http://dx.doi.org/10.4028/p-3wy1yi.

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The layer structure of 3C-SiC stacked on 4H-SiC is implemented by simultaneous lateral epitaxy (SLE). The SLE, involving spontaneous nucleation of 3C-SiC(111) on the 4H-SiC(0001) surface followed by step-controlled epitaxy, facilitates the creation of a single-domain 3C-SiC layer with an epitaxial relationship to the underlying 4H-SiC, establishing a coherent (111)//(0001) interface aligned in the basal plane. An extremely low state density at an interface between thermally grown SiO2 and SLE-grown 3C-SiC layer is revealed by local deep level transient spectroscopy (local-DLTS) based on scanni

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Geng, Wenhao, Guang Yang, Xuqing Zhang, et al. "Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching." Journal of Semiconductors 43, no. 10 (2022): 102801. http://dx.doi.org/10.1088/1674-4926/43/10/102801.

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Abstract In this work, we propose to reveal the subsurface damage (SSD) of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali etching. Under UV illumination, SSD acts as a photoluminescence-black defect. The selective photo-chemical etching reveals SSD as the ridge-like defect. It is found that the ridge-like SSD is still crystalline 4H-SiC with lattice distortion. The molten-KOH etching of the 4H-SiC wafer with ridge-like SSD transforms the ridge-like SSD into groove lines, which are typical features of scratches. This means that the underlying scratches u

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Yin, Kaili, Liping Shi, Xiaoliang Ma, Yesheng Zhong, Mingwei Li, and Xiaodong He. "Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation." Nanomaterials 13, no. 15 (2023): 2196. http://dx.doi.org/10.3390/nano13152196.

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Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices. The existence of stacking faults, which originate from the “wrong” stacking sequences of Si–C bilayers, is a general feature of SiC. However, the effects of stacking faults on the thermal properties of SiC are not well understood. In this study, we evaluated the accuracy of Tersoff, MEAM, and GW potentials in describing the thermal transport of SiC. Additionally, the thermal conductivi

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Shi, Xiaodong, Yaoqin Lu, Didier Chaussende, Karsten Rottwitt, and Haiyan Ou. "Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices." Materials 16, no. 6 (2023): 2324. http://dx.doi.org/10.3390/ma16062324.

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Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 °C can help to decrease the material absorption loss. We

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Kildemo, Morten, Ulrike Grossner, Bengt Gunnar Svensson, and S. Raaen. "XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO₂/Ce₂Si₂O₇/4H-SiC Interface Structure upon Oxidation." Materials Science Forum 556-557 (September 2007): 549–54. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.549.

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The deposition and annealing in ultra high vacuum (UHV) of 5-6 monolayers (ML) of cerium on clean reconstructed Si-face 4H-SiC (0001) is studied by x-ray photoemission spectroscopy (XPS). Band bending as a function of annealing was studied by shifts of the bulk peak contribution in the C1s and Si2p spectra relative to the clean reconstructed surface. Additional datapoints for Schottky barrier formation on 4H-SiC are thus obtained by the low work function rareearth metals, and presented in the framework of the metal-induced-gap states and electronegativity model. A Ce/CeSi2-x/4H-SiC interface a

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