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Academic literature on the topic 'Acceptor dopants'

Author: Grafiati
Published: 4 June 2021
Last updated: 16 February 2022

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Journal articles on the topic "Acceptor dopants"

1

McCluskey, Matthew D., Marianne C. Tarun, and Samuel T. Teklemichael. "Acceptor Dopants in Bulk and Nanoscale ZnO." MRS Proceedings 1494 (2012): 3–12. http://dx.doi.org/10.1557/opl.2012.1574.

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ABSTRACTZinc oxide (ZnO) is a semiconductor that emits bright UV light, with little wasted heat. This intrinsic feature makes it a promising material for energy-efficient white lighting, nano-lasers, and other optical applications. For devices to be competitive, however, it is necessary to develop reliable p-type doping. Although substitutional nitrogen has been considered as a potential p-type dopant for ZnO, recent theoretical and experimental work suggests that nitrogen is a deep acceptor and will not lead to p-type conductivity. In nitrogen-doped samples, a red photoluminescence (PL) band is correlated with the presence of deep nitrogen acceptors. PL excitation (PLE) measurements show an absorption threshold of 2.26 eV, in good agreement with theory. The results of these studies seem to rule out group-V elements as shallow acceptors in ZnO, contradicting numerous reports in the literature. Optical studies on ZnO nanocrystals show some intriguing leads. At liquid-helium temperatures, a series of sharp IR absorption peaks arise from an unknown acceptor impurity. The data are consistent with a hydrogenic acceptor 0.46 eV above the valence band edge. While this binding energy is still too deep for many practical applications, it represents a significant improvement over the 1.4-1.5 eV binding energy for nitrogen acceptors. Nanocrystals present another twist. Due to their high surface-to-volume ratio, surface states are especially important. In our model, the 0.46 eV level is shallow with respect to the surface valence band, raising the possibility of surface hole conduction.
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2

Zhang, Z., L. Lu, P. Wu, and C. Shu. "Prediction of Defects in PZT Thin Film Using Ab-Initio Method." Advanced Materials Research 32 (February 2008): 53–56. http://dx.doi.org/10.4028/www.scientific.net/amr.32.53.

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This paper reviews our systematic and exhaustive studies on the lead zirconate titanate doped with dopants using ab initio density functional theory calculations in order to understand the mechanisms behind the dopings. Different candidates of dopants were selected by screening the periodical table of elements. In our studies, group VA, VIA elements (B-site donors), group IIA elements (A-site donors), group IIIB elements (B-site acceptors), and group VB elements (A-site donor, B-site acceptor/donors) are investigated as dopants in PZT. We found that there exist different mechanisms behind the improved ferroelectric properties, especially the fatigue behaviors. For donors doping, diluted oxygen vacancy concentration and reduced electronic suppression of polarization contribute to the fatigue-free behaviors of donor doped PZT. On the other hand, for acceptor doping, acceptor-oxygen-vacancy-acceptor clusters are energetically preferred, which greatly reduce the oxygen vacancy mobility and the domain pinning effects. We expect that this study could provide important information for the experiments on PZT-based materials.
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3

Khina, Boris B. "Extended 'Five-Stream' Model for Diffusion of Implanted Dopants in Silicon during Ultra-Shallow Junction Formation in VLSI Circuits." Defect and Diffusion Forum 277 (April 2008): 107–12. http://dx.doi.org/10.4028/www.scientific.net/ddf.277.107.

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Ion implantation of different dopants (donors and acceptors) into crystalline silicon with subsequent thermal annealing is used for the formation of ultra-shallow p-n junctions in VLSI technology. The experimentally observed phenomenon of transient enhanced diffusion (TED) during annealing hinders further downscaling of advanced VLSI circuits. However, modern mathematical models of dopant diffusion, which are based on the so-called “five-stream” approach, and software packages such as SUPREM4 encounter difficulties in describing TED. In this work, an extended five-stream model for diffusion in silicon is developed, which takes into account all the possible charge states of point defects (vacancies and silicon self-interstitials) and diffusing pairs “dopant atom–vacancy” and “dopant atom–silicon self-interstitial”. The model includes diffusion and drift of differently charged point defects and pairs in the internal electric field and the kinetics of interaction between unlike species. The expressions for diffusion fluxes and sink/source terms that appear in the non-linear, non-steady-state reaction-diffusion equations are derived for both donor and acceptor dopants accounting for multiple charge states of the diffusing species.
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4

Bet, S., N. R. Quick, and Aravinda Kar. "Laser Doping of Chromium and Selenium in p-Type 4H-SiC." Materials Science Forum 600-603 (September 2008): 627–30. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.627.

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Chromium (Cr) and selenium (Se) are laser doped in silicon carbide (4H-SiC p-type aluminium) to fabricate an embedded light emitting device and to tune the light emission. A near infrared Nd:YAG (1064 nm wavelength) laser source and an organometallic Cr compound (bis (ethyl benzene)-chromium) and organometallic Se compound (dimethyl selenide) were used to laser dope SiC. A p-n junction device structure was created using these dopants. The dopant profiles have been characterized using secondary ion mass spectrometry. Electrical properties were measured using Hall effect measurement. Enhanced diffusivity and solubility with complete activation of dopants was observed for laser doped Cr and Se. Cr and Se are unconventional dopants, which serve as a double donor and a double acceptor respectively, while aluminium (Al) behaves as single acceptor and nitrogen (N) as a single donor in SiC. The defect levels (donor and acceptor) created within the forbidden band gap of SiC due to Se, Cr and Al onsets the donor acceptor pair (DAP) recombination mechanism for luminescence observed in SiC. Electroluminescence studies showed an orange (677 nm) corresponding to Cr-Al and, red (698 nm) and white (380-900 nm) for Se-Al and pure white for Cr-Se-Al. The Cr-Se-Al white light exhibited a correlated color temperature of 4935 K, which compares well to average daylight (5500 K).
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5

Lyons, John L. "A survey of acceptor dopants forβ-Ga2O3". Semiconductor Science and Technology 33, № 5 (2018): 05LT02. http://dx.doi.org/10.1088/1361-6641/aaba98.

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6

Gupta, Tapan K. "Microstructural engineering through donor and acceptor doping in the grain and grain boundary of a polycrystalline semiconducting ceramic." Journal of Materials Research 7, no. 12 (1992): 3280–95. http://dx.doi.org/10.1557/jmr.1992.3280.

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This paper deals with the concept of microstructural engineering through donor and acceptor dopings within the grain and at the grain boundary of a polycrystalline semiconducting ceramic. These concepts are derived from an analysis of the “prebreakdown” and the “upturn” current-voltage characteristics of a ZnO varistor and from the construction of corresponding defect models as a function of donor and acceptor dopants at the grain and grain boundary. By using Li, Al, and Na as dopants, it is shown that the dopants can be grain or grain boundary specific in the ZnO microstructure and that they can act as donors, acceptors, or both, depending on the nature and concentration of dopants and their location on the host crystal lattice structure. In the case of the ZnO varistor, the grain and grain boundary properties can thus be tuned independently or concurrently by systematic engineering of the entire microstructure through defect dopings that are specific to the grain, grain boundary, or both. Following a detailed analysis of the defect models thus developed for the ZnO varistor, a set of ground rules are proposed for applying these concepts of donor and acceptor dopings at the grain and grain boundary to the general case of microstructural engineering in a polycrystalline semiconducting ceramic.
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7

Weston, Leigh, A. Janotti, X. Y. Cui, C. Stampfl, and C. G. Van de Walle. "Acceptor doping in the proton conductor SrZrO3." Physical Chemistry Chemical Physics 19, no. 18 (2017): 11485–91. http://dx.doi.org/10.1039/c7cp01471f.

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8

Wen, Xiao Hong, and Hai Jun Pan. "Electron Properties of F, and N Doped Hematite: The Application for Photocatalysis." Advanced Materials Research 562-564 (August 2012): 298–301. http://dx.doi.org/10.4028/www.scientific.net/amr.562-564.298.

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To improve photocatalytic activity of hematite, the electronic structures of F, and N doped hematite were studied via the first-principles band calculations with GGA+U methods. By analyzing the band structures of pure and doped hematite, we showed that the significant acceptor levels were induced by N dopants, whereas F dopants created shallow donor levels and Fermi energy entered the conduction bands. Our findings proposed that p-type dopant N was in favor of realizing the expectation of producing hydrogen in the visible-light photoelectrochemical (PEC) water splitting without voltage bias, and n-type dopant F was helpful to solve the problem of recombination of photo-produced electron-hole pairs The results of our calculation should be applicable to the improvement of photocatalytic performances of hematite.
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9

Shura, Megersa Wodajo. "Investigation of dopant centres dominating the conduction process in the bulk of un-doped GaSb." Journal of Theoretical and Applied Physics 13, no. 4 (2019): 315–27. http://dx.doi.org/10.1007/s40094-019-00355-3.

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Abstract In this paper, first, the theoretical description of the effects of the dopant densities and the activation energies on the ionization densities, the chemical potentials corresponding to each dopant levels, the majority carrier densities and the Fermi-energy levels in one-acceptor-level system, highly compensated system and two-acceptor-level system are described in detail. Upon fitting the theoretical to the experimental results obtained by the temperature-dependent Hall effect measurements for three samples of un-doped GaSb, the dopant densities and the activation energies for a system with different dopants are investigated. The obtained results revealed that the dopant activation energy has less (no) effect on the Fermi-energy level and the majority carrier density in the highest temperature regimes. The doping density has also less (no) effect on the Fermi-energy level in the lowest temperature regimes. Finally, fitting of the theoretical to the experimental Hall effect measurements results confirmed the presence of three acceptor and one donor levels dominating the majority carrier densities at different temperature regions in all the samples of un-doped GaSb semiconductor.
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10

Tan, Hong Ling, Cong Ying Jia, Chao Xiang, and Ying Xiang Yang. "Impact Electrical Property of Alkali Metal Doped ZnO." Advanced Materials Research 468-471 (February 2012): 1501–7. http://dx.doi.org/10.4028/www.scientific.net/amr.468-471.1501.

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Calculate the electronic structure of alkali metal ion-doped Zn crystal, based on density functional theory (DFT) first-principles plane-wave ultra-soft pseudo-potential method. Analyze the band structure of alkali metal ion-doped ZnO crystal, and the electronic density of states. The results indicated that in theory, the doping of alkali metal ions are able to form a p-type ZnO semiconductor, and introduce in the deep acceptor levels. In the actual substitution process, the dopant ions may enter the interstitial site. Thus the alkali metal ions are tending to become donor interstitial impurities. In addition, since the ionic radius of K is larger than the ionic radiuses of Li and Na. And K+ formed the minimum acceptor level (0.078eV), which is a shallow acceptor level. K+ is better than Li+ and Na+ as a dopant. In short, they are not good p-type dopants.
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