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Relevant bibliographies by topics / Active semiconductors / Dissertations / Theses

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Dissertations / Theses on the topic 'Active semiconductors'

Author: Grafiati

Published: 19 October 2024

Last updated: 31 July 2025

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1

Haasmann, Daniel Erwin. "Active Defects in 4H–SiC MOS Devices." Thesis, Griffith University, 2015. http://hdl.handle.net/10072/367037.

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The research findings presented in this thesis have provided several key contributions towards a better understanding of the SiC–SiO2 interface in SiC MOS structures. The electrically active defects directly responsible for degrading the channel-carrier mobility in 4H–SiC MOSFETs have been identified and a novel technique to detect these defects in 4H–SiC MOS capacitors has been proposed and experimentally demonstrated. With a better understanding of defects at the SiC–SiO2 interface two alternative gate oxide growth processes have been proposed to overcome the practical limitations associated

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2

Almrabet, Meftah M. "Electrically active defects in novel Group IV semiconductors." Thesis, Sheffield Hallam University, 2006. http://shura.shu.ac.uk/19253/.

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This thesis presents the electrical characterisation of defects in novel group IV semiconducting materials: semiconducting diamond and silicon germanium (SiGe) virtual substrates. Several methods to clean diamond surfaces are introduced, which lead to the fabrication of a diamond Schottky diode with acceptable characteristics. Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements were carried out to study the electrical properties of both the diamond and SiGe Schottky diodes. Deep level transient spectroscopy (DLTS) and Laplace DLTS were then carried out to investigate the deep elec

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3

Doolittle, William Alan. "Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15710.

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4

He, Weiwei. "IGBT series connection based on cascade active voltage control with temporary clamp." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708196.

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5

Maës, Clément. "Plasmonique active pour l’infrarouge sur semi-conducteur fortement dopé." Thesis, Montpellier, 2020. http://www.theses.fr/2020MONTS033.

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Le contexte de ma thèse se situe dans le cadre de l’imagerie multispectrale infrarouge (IR) et traite notamment de la plasmonique, domaine de l’optique électromagnétique dont le but est d’étudier et d’exploiter des ondes de surface existant à l’interface entre un métal et un diélectrique. On cherche à miniaturiser des fonctions optiques grâce aux nanotechnologies et plus précisément à réaliser du filtrage spectrale IR au niveau du pixel de détection en intégrant un nano-résonateur. Usuellement, on utilise des diélectriques et des métaux mais l’intégration est complexe. J’explore le potentiel o

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6

Hill, Bradford K. Greene Michael E. "A linear CMOS tunable active resistor." Auburn, Ala, 2008. http://repo.lib.auburn.edu/EtdRoot/2008/SPRING/Electrical_and_Computer_Engineering/Thesis/Hill_Bradford_35.pdf.

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7

Wang, Lei [Verfasser]. "Small molecule organic semiconductors as efficient visible light-active photocatalysts / Lei Wang." Mainz : Universitätsbibliothek der Johannes Gutenberg-Universität Mainz, 2017. http://d-nb.info/1225685842/34.

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8

Toffanin, Stefano. "Multifunctional organic semiconductors as active materials for electronic and opto-electronic devices." Doctoral thesis, Università degli studi di Padova, 2009. http://hdl.handle.net/11577/3426094.

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Since the first discovery of the photoelectric effect in anthracene, organic compounds have been studied as multi-functional materials because of their capability of showing a variety of properties such as charge transport, light absorption/emission, photoconductivity, electroluminescence and superconductivity. The work presented in this Ph.D. thesis aims at studying different classes of ?-conjugated organic materials that present functional properties suitable for the realization of opto-electronic devices. In particular we focus our attention on the two specific properties that are deeply

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9

Palakodety, Atmaram Mohanty Saraju. "CMOS active pixel sensors for digital cameras current state-of-the-art /." [Denton, Tex.] : University of North Texas, 2007. http://digital.library.unt.edu/permalink/meta-dc-3631.

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10

Shen, Chao. "Study of CMOS active pixel image sensor on SOI/SOS substrate /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20SHEN.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.<br>Includes bibliographical references (leaves 67-69). Also available in electronic version. Access restricted to campus users.

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11

Lowry, Curtis Wayne. "Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities." Diss., The University of Arizona, 1993. http://hdl.handle.net/10150/186295.

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Nonlinear optical properties of passive and active semiconductors are investigated experimentally and theoretically. Improvement of switching cycle time in optical nonlinear etalons to 40 ps is demonstrated, and strained-layer InGaAs/GaAs quantum well material is used in an asymmetric etalon to greatly improve switching power and contrast. Coherent energy transfer (CET) induced by injection of an external light field is demonstrated in a GaAs quantum well vertical-cavity surface-emitting laser (VCSEL). The evolution of CET induced asymmetric gain with increasing injected power is investigated

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12

Gibson, Jr Allen. "Design and simulation of CMOS active mixers." Master's thesis, University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4765.

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This paper introduces a component of the Radio Frequency transceiver called the mixer. The mixer is a critical component in the RF systems, because of its ability for frequency conversion. This passage focuses on the design analysis and simulation of multiple topologies for the active down-conversion mixer. This mixer is characterized by its important design properties which consist of conversion gain, linearity, noise figure, and port isolation. The topologies that are given in this passage range from the most commonly known mixer design, to implemented design techniques that are used to incr

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13

McGarvey, Brian Scott. "Coupling of solid-state and electromagnetic equations for the computationally efficient time-domain modeling and design of wireless packaged geometries with nonlinear/active devices." Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-04092007-055514/.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007.<br>Tentzeris, Manos, Committee Chair ; Laskar, Joy, Committee Member ; Papapolymerou, John, Committee Member.

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14

Mitchell, Lee. "Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation." Thesis, University of North Texas, 2006. https://digital.library.unt.edu/ark:/67531/metadc5259/.

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Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has

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15

Palakodety, Atmaram. "CMOS Active Pixel Sensors for Digital Cameras: Current State-of-the-Art." Thesis, University of North Texas, 2007. https://digital.library.unt.edu/ark:/67531/metadc3631/.

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Image sensors play a vital role in many image sensing and capture applications. Among the various types of image sensors, complementary metal oxide semiconductor (CMOS) based active pixel sensors (APS), which are characterized by reduced pixel size, give fast readouts and reduced noise. APS are used in many applications such as mobile cameras, digital cameras, Webcams, and many consumer, commercial and scientific applications. With these developments and applications, CMOS APS designs are challenging the old and mature technology of charged couple device (CCD) sensors. With the continuous impr

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16

Lo, Keng Wai. "Wideband active-balun variable-gain low-noise amplifier for mobile-TV applications." Thesis, University of Macau, 2010. http://umaclib3.umac.mo/record=b2148237.

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17

Monti, Federico. "Time sampling using four-wave mixing to measure the dynamics of semiconductor nanolasers." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP026.

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Les nanolasers PhC suscitent de plus en plus d'attention en raison de leur capacité unique à manipuler et à confiner la lumière à une très petite échelle. Leur empreinte réduite et leur seuil bas en font des candidats idéaux pour la réalisation de connexions optiques, répondant ainsi à la demande croissante en matière de vitesse de transmission des données et de consommation d'énergie. De plus, leur géométrie singulière permet de contrôler leurs propriétés d'émission spontanée. Cela révèle l'unicité des nanolasers PhC d'un point de vue fondamental, soulignant leur potentiel à servir de sujets

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18

Christofferson, James. "Thermal microscopy of active semiconductor devices /." Diss., Digital Dissertations Database. Restricted to UC campuses, 2004. http://uclibs.org/PID/11984.

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19

Pande, Peyush. "Characterization of Active Defects in SiC MOSFETs." Thesis, Griffith University, 2020. http://hdl.handle.net/10072/394315.

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In the recent years, SiC has become a popular material for power semiconductor devices, after decades long dominance of Si. SiC metal‒oxide‒semiconductor field-effect transistors (MOSFETs) are now commercially available and performing beyond the theoretical limits of Si MOSFETs, however, they are still far from the theoretical limits of SiC. One of the major issues in the commercial SiC MOSFETs is the low channel-carrier mobility, which is attributed to the high density of defects at or near the SiC/SiO2 interface. Consequently, it is necessary to characterize the SiC/SiO2 interface appropriat

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20

Neophytou, Ares Ioanni. "Hybrid active optical switching using semiconductor laser devices." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260354.

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21

Bauer, Stefan. "Nonlinear dynamics of semiconductor lasers with active optical feedback." Doctoral thesis, [S.l.] : [s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=973616423.

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22

Pitcher, P. G. "Distribution of electrically active centres in boron implanted cadmium mercury telluride." Thesis, University of Surrey, 1986. http://epubs.surrey.ac.uk/847907/.

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The objective of this work was to investigate the distribution of donor-like centres produced by boron implantation into p-type, Bridgeman grown Hg[0.8]Cd[0.2]Te and fabricate photodiodes from implanted substrates. Low carrier concentration substrates, 4-5x10[16]cm[-3], were implanted at room temperature with dose rates (&phis;) of 4x10[-2] or 6x10[-3]muAcm[-2], to a total dose of 1 x 10[15]B[+] cm[-2] (50,100keV) or 1x10[14]B[+]cm[-2] (150keV), respectively. Encapsulated specimens were annealed at 200°C or 235°C to activate the dopant or redistribute electrically active radiation dama

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23

Liddell, W. J. "Polarisation and spectral characteristics of spontaneous emission in active optical waveguides." Thesis, University of Bath, 1986. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.376271.

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24

Hamamoto, Kiichi. "Active multi-mode-interferometer laser diodes and semiconductor optical amplifiers /." Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13822.

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25

Schwaiger, Stephan [Verfasser]. "Rolled-Up Metamaterials Containing Active Semiconductor Quantum Structures / Stephan Schwaiger." München : Verlag Dr. Hut, 2012. http://d-nb.info/1028786441/34.

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26

Motamedi, Ali Reza. "Ultrafast nonlinear optical properties of passive and active semiconductor devices." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/66017.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>Nonlinear optical properties and ultrafast carrier dynamics of slab-coupled optical waveguide amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two photon absorption and free-carrier absorption on the gain and output powers of an InGaAsP/InP slab-coupled optical waveguide amplifier with a confinement factor of [gamma] = 0.5% a

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27

Hildmann, Julia [Verfasser]. "Nuclear Spin Phenomena in Optically Active Semiconductor Quantum Dots / Julia Hildmann." Konstanz : Bibliothek der Universität Konstanz, 2014. http://d-nb.info/1049393600/34.

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28

Milovanovic, Mihailo. "A study of active mode-locking of external cavity semiconductor lasers." Thesis, University College London (University of London), 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.261067.

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29

Lämmlin, Matthias. "GaAs-based semiconductor optical amplifiers with quantum dots as an active medium." [S.l.] : [s.n.], 2006. http://opus.kobv.de/tuberlin/volltexte/2007/1476.

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30

Bach, Susan Elizabeth. "Chirp compensation in active mode-locked semiconductor diode laser using a DFB." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/36504.

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31

Hsu, Kevin. "Stochastic mode-locking theory and short pulse generation by active mode-locking of external-cavity semiconductor lasers." Diss., Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/14990.

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32

Greig, Thomas Alexander. "Development of CMOS active pixel sensors." Thesis, Brunel University, 2008. http://bura.brunel.ac.uk/handle/2438/5345.

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This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for scientific imaging applications. CMOS APS offer a number of advantages over the established charge-coupled device (CCD) technology, primarily in the areas of low power consumption, high-speed parallel readout and random (X-Y) addressing, increased system integration and improved radiation hardness. The investigation used a range of newly designed Test Structures in conjunction with a range of custom developed test equipment to characterise device p

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33

Chang, J. T. "Active mode-locking of semiconductor lasers and study of optical amplification in diode lasers." Thesis, Imperial College London, 1988. http://hdl.handle.net/10044/1/46995.

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34

Malape, Maibi Aaron. "Low temperature growth of Amorphous Silicon thin film." Thesis, University of the Western Cape, 2007. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_7768_1254727160.

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<p>The growth of amorphous hydrogenated silicon (a-Si:H) thin films deposided by hot wire chemical vapor deposition (HWCVD) has been studied. The films have been characterised for optical and structural properties by means of UV/VIS,FITR,ERDA, XRD.XTEM and Raman spectroscopy. Low subtrate heater temperatures in the range form 130 to 200 degrees celcius were used in this thesis because it is believed to allow for the deposition of device quality a-Si:H which can be used for electronic photovoltaic devices. Furthermore, low temperatures allows the deposition of a-Si:H on any subtrate and thus of

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35

Akram, Nadeem. "Photonic devices with MQW active material and waveguide gratings : modelling and characterisation." Doctoral thesis, KTH, Mikroelektronik och Informationsteknik, IMIT, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-433.

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The research work presented in this thesis deals with modelling, design and characterisation of passive and active optical waveguide devices. The rst part of the thesis is related to algorithm development and numerical modelling of planar optical waveguides and gratings using the Method of Lines (MoL). The basic three-point central-di erence approximation of the δ2=δx2 operator used in the Helmholtz equation is extended to a new ve-point and seven-point approximation with appropriate interface conditions for the TE and TM elds. Di erent structures such as a high-contrast waveguide and a TM sur

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36

Jobe, Sean Richard Keali'i. "OPTIMIZATION OF GAN LASER DIODES USING 1D AND 2D OPTICAL SIMULATIONS." DigitalCommons@CalPoly, 2009. https://digitalcommons.calpoly.edu/theses/74.

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This paper studies the optical properties of a GaN Laser Diode (LD). Through simulation, the GaN LD is optimized for the best optical confinement factor. It is found that there are optimal thicknesses of each layer in the diode that yield the highest optical confinement factor. There is a strong relationship between the optical confinement factor and lasing threshold—a higher optical confinement factor results in a lower lasing threshold. Increasing optical confinement improves lasing efficiency. Blue LDs are important to the future of lighting sources as they represent the final color in the

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37

Gilfert, Christian Jürgen [Verfasser]. "High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication / Christian Jürgen Gilfert." Kassel : Universitätsbibliothek Kassel, 2012. http://d-nb.info/1024364461/34.

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38

Mashade, Mohamed Bakry el. "Largeur spectrale du laser semiconducteur dans l'approximation d'une couche mince active." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37607749b.

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39

Chen, Xiuping. "Embedded active and passive methods to reduce the junction temperature of power and RF electronics." Thesis, Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51901.

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AlGaN/GaN high electron mobility transistors (HEMTs) have been widely used for high power and high frequency RF communications due to their fast switching and large current handling capabilities. The reliability of such devices is strongly affected by the junction temperature where the highest magnitude occurs in a local region on the drain side edge of the gate called the hotspot. Thus, thermal management of these devices remains a major concern in the design and reliability of systems employing AlGaN/GaN HEMTs. Due to the large power densities induced in these devices locally near the drain

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40

Zurletto, Claude. "Influence de recuit à 425o C sur des propriétés électriques du silicium polycristallin : action d'une interface aluminium-silicium." Aix-Marseille 3, 1988. http://www.theses.fr/1988AIX30053.

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Analyse des longueurs de diffusion des porteurs minoritaires dans si. Des recuits a 425#oc pendant quelques heures augmentent la longueur de diffusion de 20 a 30 m tant que les valeurs initiales sont inferieures a 60 m. Les effets sont plus marques lorsqu'une couche d'aluminium est prealablement deposee sur la face arriere des echantillons ou lorsque les echantillons sont soumis a une diffusion superficielle de phosphore. Explication des resultats par l'interaction entre atomes d'oxygene dissous, impuretes metalliques, interstitiels de si et defauts (dislocations)

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41

Moradi, Aali. "Action d'un champ magnétique sur les trions excitoniques dans les puits quantiques de semi-conducteurs." Metz, 2001. http://docnum.univ-lorraine.fr/public/UPV-M/Theses/2001/Moradi.Aali.SMZ0122.pdf.

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Le travail présenté dans ce mémoire est consacré à l'étude des excitons chargés (ou trions excitoniques) dans les puits quantiques de semi-conducteurs, en l'absence et en présence d'un champ magnétique. Les résultats numériques ont été particularisé à des composés de type GaAS/GaAlAs et CdTe/CdZnTe en raison des applications potentielles de ces nanostructures dans le domaine de l'optoélectronique. Les excitons chargés résultent de la liaison d'un exciton (paire électron trou) avec un électron (trion négatif) ou un trou (trion positif) et peuvent donc être considérés comme des quasi-particules

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42

Feddi, El Mustapha. "Action d'un champ magnétique sur les trions excitoniques dans les semiconducteurs." Metz, 1987. http://docnum.univ-lorraine.fr/public/UPV-M/Theses/1987/Feddi.El_Mustapha.SMZ8707.pdf.

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Les trions excitoniques sont des quasiparticules chargées et mobiles, pouvant résulter, dans certaines conditions, de la liaison d'un "exciton" avec un électron ou un trou libre dans les semiconducteurs. Ils font partie des états excités électroniques dont l'étude présente un très grand intérêt tant des points de vue pratique que théorique. Elle permet de comprendre les mécanismes des recombinaisons radiatives contrôlant le fonctionnement de certains dispositifs utilisés en optoélectronique. Elle fournit à la physique fondamentale des modèles de systèmes formés de particules ou de quasiparticu

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43

Feddi, El-Mustapha. "Action d'un champ magnétique sur les trions excitoniques dans les semiconducteurs." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37604989d.

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FEDDI, EL MUSTAPHA Stebe Bernard. "ACTION D'UN CHAMP MAGNETIQUE SUR LES TRIONS EXCITONIQUES DANS LES SEMICONDUCTEURS /." [S.l.] : [s.n.], 1987. ftp://ftp.scd.univ-metz.fr/pub/Theses/1987/Feddi.El_Mustapha.SMZ8707.pdf.

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45

Fisne, Christophe. "Métasurfaces actives pour applications large bande." Thesis, Toulouse, INPT, 2020. http://www.theses.fr/2020INPT0086.

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Les métasurfaces offrent des propriétés électromagnétiques particulières permettant de générer des indices de réfraction inhabituels, produire des bandes électromagnétiques interdites, ou encore créer des surfaces à haute-impédance. Ces dernières, aussi nommées « Artificial Magnetic Conductor (AMC) » sont particulièrement intéressantes dans le domaine antennaire. En effet elles permettent de réduire les couplages de divers éléments rayonnants, mais aussi de miniaturiser les antennes comportant un plan réflecteur. Cependant, leur bande de fonctionnement inférieure à 10%, les rend souvent incomp

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46

Heiser, Thomas. "Developpement d'une technique d'analyse localisee des defauts electriquement actifs dans les semiconducteurs." Université Louis Pasteur (Strasbourg) (1971-2008), 1988. http://www.theses.fr/1988STR13136.

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Methode basee sur l'emission thermique de porteurs electriques pieges par les niveaux profonds dans la bande interdite. La modelisation de la technique a permis de determiner l'influence des divers parametres physiques sur la resolution spatiale de la technique et d'etablir les conditions optimales de mesures. L'exploitation numerisee des signaux augmente sensiblement la capacite de detection de la technique. Le phenomene de "gettering" de l'or par les dislocations ainsi que la diffusion acceleree de l'or a travers le joint de grain d'un bicristal de silicium ont ete mis en evidence

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47

Heiser, Thomas. "Développement d'une technique d'analyse localisée des défauts électriquement actifs dans les semiconducteurs." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37614162c.

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48

Marrakchi, Ghanem. "Etude comparative de différentes techniques de recuit rapide sur les défauts électriquement actifs dans l’arséniure de gallium non implante." Lyon, INSA, 1987. http://www.theses.fr/1987ISAL0049.

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Nous avons étudié les effets de traitements thermiques rapides sur les propriétés électriques de l'Arséniure de Gallium non implanté. Trois types de recuit sont considérés : le recuit électronique pulsé (REP), le Recuit par Laser Continu (RLC) et le Recuit Rapide Isotherme par lampe (RRI). Nos mesures ont été effectuées sur des dispositifs Schottky formés après traitement thermique. Elles se basent sur l'étude des courbes I(V) : courant-tension et C(V) : capacité-tension pour les caractéristiques électriques, et spectroscopie transitoire de capacité (DLTS) pour l'étude des défauts. Après REP,

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49

Azouani, Rabah. "Elaboration de nouveaux nanomatériaux photocatalytiques actifs sous rayonnement visible." Paris 13, 2009. http://www.theses.fr/2009PA132016.

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Ce travail de thèse est consacré à la synthèse par méthode sol-gel de nanoparticules de TiO2(précurseur de tétraisopropoxyde de titane) dopées à l’azote de taille contrôlée pour des applications en nanodépôts et en photocatalyse. Les colloïdes métastables sont préparés dans un réacteur à micromélange rapide (turbulent). Des mesures de granulométrie in-situ permettent le suivi de la cinétique de formation des nanoparticules. L’effet du processus de mélange des réactifs sur la distribution de taille a été analysé en utilisant le modèle hydrodynamique k-ε. L’étude de la cinétique de nucléation-cr

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Remram, Mohamed. "Etude des défauts électriquement actifs induits par le recuit rapide isotherme dans le silicium." Lyon, INSA, 1986. http://www.theses.fr/1986ISAL0028.

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Nous avons utilisé la technique de spectroscopie capacitive (DLTS) pour étudier les défauts électriquement actifs introduits par le recuit rapide isotherme (RRI) dans le silicium vierge ou implanté. Aucun niveau piège n'a été détecté dans une structure Schottky Au-Si dopé Phosphore et recuit pendant 5 s, à différentes températures. D'un autre côté, trois niveaux pièges à trous Hl (O,4 eV), H2 (0,29 eV) et H3 (0,31 eV) ont été observés dans le silicium dopé bore (Al-Si(p)) et recuit pendant 5 s entre 850 et 1050°C. Pour les temps de recuit de 10 s et 20h aucun niveau n'a été observé. Les pics d

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