Relevant bibliographies by topics / AlGaInAs

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'AlGaInAs'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 February 2022

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Journal articles on the topic "AlGaInAs"

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Hillmer, H., A. Pöcker, F. Steinhagen, H. Burkhard, R. Lösch, and W. Schlapp. "MBE grown strain-compensated AlGaInAs/AlGaInAs/InP MQW laser structures." Electronics Letters 31, no. 16 (August 3, 1995): 1346–48. http://dx.doi.org/10.1049/el:19950902.

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Song, Yue, Yongyi Chen, Ligong Zhang, Yugang Zeng, Cheng Qiu, Lei Liang, Yuxin Lei, et al. "Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence." Materials 13, no. 19 (September 23, 2020): 4227. http://dx.doi.org/10.3390/ma13194227.

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AlGaInAs quantum well (QW) lasers have great potential in the application fields of optical communications and eye-safety lidars, owing to the advantages of good gain performance. A large amount of experimental evidence indicated that carrier dynamic affects the resonant frequency and modulation response performance of QW lasers. However, the mechanism of carrier dynamic in AlGaInAs QW structure is still ambiguous for complicated artificial multilayers. In this paper, the carrier dynamic of AlGaInAs QW structure was investigated by temperature-dependent time-resolved photoluminescence (TRPL) in the range of 14 to 300 K. Two relaxation times (a fast component and a slow one) have a major impact on the PL emission spectra of the AlGaInAs QW below 200 K. The carriers prefer a fast decay channel in the low temperature regime, whereas the slow one a higher temperature. An unconventional temperature dependence of carrier relaxation is observed in both decay processes. The carriers’ lifetime decreases with the temperature increasing till 45 K and then increases with temperature up to 250 K. It is quite different from that in the bulk semiconductor. The mechanism of temperature-dependent carrier relaxation at temperatures above 45 K is a combination of dark state occupation and a nonradiative recombination process.
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Chen, Lianhui, Guanghan Fan, and Yaoyong Meng. "Study of the long-wavelength optic phonons in AlGaInP and AlGaInAs." Microelectronics Journal 35, no. 2 (February 2004): 125–30. http://dx.doi.org/10.1016/j.mejo.2003.10.004.

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Storozhenko, I., and M. Kaydash. "AlGaInAs graded-dap Gunn diode." RADIOFIZIKA I ELEKTRONIKA 21, no. 3 (September 26, 2016): 52–57. http://dx.doi.org/10.15407/rej2016.03.052.

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Yongzhen Huang, Yongzhen Huang, Jiandong Lin Jiandong Lin, Qifeng Yao Qifeng Yao, Xiaomeng Lv Xiaomeng Lv, Yuede Yang Yuede Yang, Jinlong Xiao Jinlong Xiao, and Yun Du Yun Du. "AlGaInAs/InP coupled-circular microlasers." Chinese Optics Letters 10, no. 9 (2012): 091404–91406. http://dx.doi.org/10.3788/col201210.091404.

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Wu, Ming-Yuan, Po-Hsun Lei, Chia-Lung Tsai, Chih-Wei Hu, Meng-Chyi Wu, and Wen-Jeng Ho. "Comparison of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers." Japanese Journal of Applied Physics 42, Part 2, No. 12B (December 2003): L1507—L1508. http://dx.doi.org/10.1143/jjap.42.l1507.

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Storozhenko, I. P., and M. V. Kaydash. "AlGaInAs GRADED-GAP GUNN DIODE." Telecommunications and Radio Engineering 75, no. 16 (2016): 1495–504. http://dx.doi.org/10.1615/telecomradeng.v75.i16.70.

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Lei, Po-Hsun. "1.3μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well index-coupled distribution feedback laser diodes." Solid-State Electronics 51, no. 6 (June 2007): 925–30. http://dx.doi.org/10.1016/j.sse.2007.04.014.

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Po-Hsun Lei, Chia-Chien Lin, Wen-Jeng Ho, Meng-Chyi Wu, and Lih-Wen Laih. "1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes." IEEE Transactions on Electron Devices 49, no. 7 (July 2002): 1129–35. http://dx.doi.org/10.1109/ted.2002.1013267.

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Park, Hyundai, Alexander W. Fang, Oded Cohen, Richard Jones, Mario J. Paniccia, and John E. Bowers. "A Hybrid AlGaInAs–Silicon Evanescent Amplifier." IEEE Photonics Technology Letters 19, no. 4 (2007): 230–32. http://dx.doi.org/10.1109/lpt.2007.891188.

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Dissertations / Theses on the topic "AlGaInAs"

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Campi, Roberta. "High performance materials and processing technology for uncooled 1.3 μm laser diodes." Doctoral thesis, KTH, Halvledarmaterial, HMA, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-529.

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This thesis investigates different material systems and processing technology for high temperature compatible laser diodes used in volume applications within the 1.3-μm telecom wavelength window. Laser diodes built from such materials are much desired in order to eleminate the need for active temperature control needed in current systems, which significantly increases both complexity, size and cost. The structures were grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and the evaluation of materials was performed using different characterization methods such as High-Resolution X-Ray Diffraction (HR-XRD), Photoluminescence (PL), Time-Resolved Photoluminescence (TR-PL). Fabrication and evaluation of Fabry-Perot lasers with different geometries was used to check the material quality and temperature performance. A novel in-situ etching technique was developed for the use i future more advanced, buried hetrostructure lasers. The first studied materials system was AlGaInAsP/InGaAsP/InP. To handle a 5-element material with the precision required, modelling of the materials and heterostructure properties was performed. The addition of Al to the InGaAsP barrier allows better electron confinement with little change in valence band properties. The optimum aluminium content was found to be about 12%. Although the effect of Al could be identified, it was not sufficient with T0 of only 90 K only up to 60 °C. A second materials system InGaP/InAsP/ InP initially looked quite promising from a materials and quantum well design point of view but encountered severe problems with the device integration and further work was discontinued. The main effort was therefore was devoted to a third materials system: AlGaInAs/AlGaInAs/InP. This material system is not unknown but has hitherto not found a widespread application for fibre optic applications. In this work, the MOCVD growth of 1.3 μ;m quantum well laser structures was optimized and ridge waveguide laser devices with excellent temperature performance was fabricated (T0 = 97 K at 85 °C). A ridge waveguide laser was identified as suitable structure since it requires only a single epitaxial growth, thus avoiding the main problem of oxidation of Al based buried structures. The dynamic performance was excellent up to 110 °C and the device fabrication is highly reliable (lifetime >7000 h). This high yield uncooled ridge Fabry-Perot laser process has now been transferred to production and is applied in short length 10 Gb/s multimode links. In order to further improve the usefulness of the Al-containing materials in even higher performance devices needed in future applications developments towards fully buried heterostructure device geometry were also pursued. To overcome difficulty of oxidation of Al containing layers at the mesa walls an in-situ etching technique was implemented. Different chemistry approaches were investigated and the first results of lasers devices were reported.
QC 20100930
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Haji, Mohsin. "Optical code division multiple access systems in AlGaInAs/InP." Thesis, University of Glasgow, 2012. http://theses.gla.ac.uk/3515/.

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The rise of photonic integration makes optical code division multiple access (OCDMA) worth revisiting due to its promising role in future all-optical networks. OCDMA has the potential to exploit the surplus bandwidth of optical fibres and to carry over to the optical domain the benefits seen CDMA radio communication systems, such as the effective sharing of the spectrum for multiple network subscribers, and resistance to jamming and eavesdropping. One of the major requirements for the deployment of OCDMA in networks is integration. This thesis presents a research study of integrated OCDMA systems using the AlGaInAs/InP semiconductor material system. This material is considered due to its useful intrinsic properties such as thermal stability, strong electron confinement, and low threshold, making it suitable for fabricating optoelectronic devices. Two bespoke OCDMA systems are considered for integration: coherent temporal phase coding (TPC), and incoherent wavelength-hopping time-spreading (WHTS) OCDMA systems. TPC systems are excellent for high speed communications due to their static en/decoding enabling features. In this research, a 2×2 asymmetric Mach Zehnder interferometer (AMZI) is used to generate a 2-bit phase code, allowing multiplexing for up to four users. A semiconductor mode-locked ring laser is also embedded in the circuit, and using a synchronous mode-locking method, adequate signal en/decoding is achieved. WHTS systems on the other hand fully exploit the spectral and temporal space available in networks by assigning each user with a unique wavelength-time hop sequence for en/decoding data signals. Here, a mode-locked laser array is used with intracavity distributed Bragg reflectors (DBRs) for spectrally tuning each laser, and a 4:1 multimode interference coupler is used to combine the laser signals into a single channel for amplification, modulation and transmission. The integrated system is fully characterised and synchronisation experiments are performed to show the potential for its use in high speed multi-user networks. Mode-locked lasers play an important role in many OCDMA implementations due to their wide spectrum and discrete temporal properties, which can be easily exploited during data en/decoding. Various mode-locked laser devices have been studied during this research with additional embedded components such as intracavity DBRs and phase controllers for precise tuning of the wavelength and pulse repetition frequency. However, the noisy nature of passively operating mode-locked lasers make them prone to high jitter, which can result in high bit error rates. Synchronisation schemes are thereby explored in order to temporally stabilise the pulse oscillations to make them suitable for use in long haul transmission systems. This includes synchronous and hybrid mode-locking, as well as a passive technique using an optical fibre loop to provide phase feedback, which is shown to promote ultralow RF linewidths in mode-locked lasers.
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McMaster, Steven. "Monolithically integrated mode-locked ring lasers and Mach-Zehnder interferometers in AlGaInAs." Thesis, University of Glasgow, 2010. http://theses.gla.ac.uk/1831/.

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In this thesis, monolithically integrated photonic devices for next generation optical telecommunications networks were investigated, namely semiconductor modelocked ring lasers and Mach-Zehnder interferometers operating at 1550 nm. Fabricated on the aluminium quaternary, the 2.3mm long passively mode-locked ring devices produced 1 ps pulses at a repetition rate of around 36GHz. It was found that the symmetrically placed dual saturable absorber configuration lead to the largest area of stable mode-locking, agreeing well with theoretical predictions in the literature. Optical harmonic injection mode-locking was found to improve the pulse timing stability, with a reduction in the radio frequency 3 dB linewidth from 1.4MHz down to 108 kHz, indicating a vast improvement in timing jitter. The sputtered SiO2 quantum-well intermixing technique allowed for the realisation of both symmetric and asymmetric arm length Mach-Zehnder interferometers, which were demonstrated as an electro-optic switch, tunable wavelength filter and optical code division multiple access encoder/decoder. The work concluded with the monolithic integration of a mode-locked ring laser and asymmetric Mach-Zehnder interferometer to demonstrate a simple, yet effective, photonic integrated circuit.
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Hallali, Paul-Eric. "Diffusion de zinc dans les materiaux algainas : application au transistor bipolaire a heterojonction." Paris 7, 1988. http://www.theses.fr/1988PA077071.

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Ces materiaux quaternaires algainas et les ternaires limites gainas et alinas sont elabores par epitaxie par jets moleculaires sur substrat de phosphure d'indium. Les diffusions sont realisees en utilisant la technique de la boite semi-fermee et elles sont caracterisees par profilometre electrochimique (polaron) et par sonde ionique (sims). On etudie experimentalement le mecanisme de diffusion du zinc dans gainas et on determine un mecanisme intersticiel-substitutionnel. Ensuite on expose l'utilisation de la diffusion dans le procede de fabrication des transistors bipolaires a heterojonction
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WANG, GUIYING. "Etude optique de la structure electronique de superreseaux gainas/algainas soumis a un champ electrique." Paris 7, 1996. http://www.theses.fr/1996PA077151.

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Nous avons effectue, sur des superreseaux gainas/algainas accordes en maille avec des substrats inp, des mesures de photoluminescence, photocourant, photocourant-voltage et photoluminescence-excitation. Nous avons mis en evidence les echelles de wannier-stark relatives aux etats 1s et 2s de l'exciton lourd, permettant ainsi une determination precise de son rydberg, ainsi que les echelles relatives au trou leger et a l'etat excite du trou lourd. Cette derniere transition est permise par le champ electrique qui brise la symetrie miroir du potentiel du superreseau. Les mesures de photoluminescence ont mis en evidence, a basse temperature, le piegeage des excitons sur les rugosites d'interface avec une energie moyenne de 3,1 mev. La photoluminescence a mis en evidence deux autres caracteristiques. D'une part des fluctuations de l'energie de la transition optique fondamentale ; cet effet est important et peut etre represente par une distribution gaussienne avec un ecart type de 6 mev. D'autre part des variations importantes de rendement radiatif avec la temperature et la longueur d'onde d'excitation ; cet effet a ete rapproche d'une propriete generalement admise des atomes d'aluminium d'induire des centres de recombinaison non radiative. En conclusion les superreseaux etudies, malgre la complexite des alliages qui les constituent (alliage ternaire dans les puits, quaternaire dans les barrieres), presentent des structures electroniques fines
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Dupuis, Nicolas. "Intégration par épitaxie sélective d'un Modulateur Electro-Absorbant et d'un Amplificateur Optique à base de puits quantiques AlGaInAs." Phd thesis, Université de Metz, 2008. http://tel.archives-ouvertes.fr/tel-00354831.

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Le développement des réseaux d'accès multi-longueur d'onde à 10 Gb/s fait apparaître un besoin pour des composants achromatiques bas-coûts. L'utilisation d'un modulateur électro-absorbant intégré avec un amplificateur optique à semiconducteurs est une solution qui permet de répondre à la fois aux critères de débits, gain d'insertion, achromacité, athermalité et insensibilité à la polarisation. Le modulateur amplifié fonctionne dans un schéma réflectif et ne nécessite donc qu'une seule fibre optique.
L'épitaxie sélective en phase vapeur est utilisée afin d'intégrer monolithiquement le modulateur et l'amplificateur. La technique permet une variation spatiale et locale des épaisseurs des couches épitaxiéees au voisinage d'un masque diélectrique sélectif. Le
matériau définissant la zone active consiste en un empilement de puits quantiques à base de matériaux AlGaInAs. Les épaisseurs et les compositions définissant l'empilement sont déterminées afin d'obtenir l'insensibilité à la polarisation et d'appliquer un décalage
spectral entre le modulateur et l'amplificateur. Ce dernier point optimise le gain d'insertion du composant intégré puisque la position spectrale du pic de gain est décalée dans la zone de modulation. L'analyse et l'interprétation des spectres en réflexion du modulateur amplifié démontrent l'intérêt de ce décalage spectral. Le comportement dynamique à haut débit montre des pénalités négligeables sur la puissance reçue en fonction de la longueur d'onde et de la température. Les résultats obtenus illustrent l'intérêt du composant pour les réseaux d'accès passifs mais aussi pour d'autres applications à plus haut débit.
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Giraudet, Louis. "Transistor à effet de champ en GaInAs : apport des hétérojonctions AlGaInAs-GaInAs dans les caractéristiques de fonctionnement." Paris 11, 1988. http://www.theses.fr/1988PA112015.

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Ce travail s'articule suivant deux axes : - l'étude des propriétés de transport des électrons dans le canal du transistor, pour laquelle a été développée une méthode originale de mesure d'effet hall différentiel sur biseau. Cette étude a conduit a l'emploi de couches tampons en algainas pour séparer le canal du substrat inp semi-isolant. - la réalisation de transistors à effet de champ utilisant un contact de grille métal semi-conducteur. L'obtention de très faibles courants de fuite nécessite l'emploi d'une barrière en alinas entre la grille métallique et le canal en gainas. Les transistors a transconductance élevée (200 ms/mm pour une longueur de grille de 1 mu m) présentent des fréquences de coupures élevées (206 hz)
GainAs Field Effect Transistors: improvements of the transistor behaviour with AIGalnAs/GalnAs heterojunctions. This work includes two parts:-a study of the electron transport properties in the FET channel: for that purpose, an original differential Hall method has been developed. This study led to the incorporation of AIGalnAs buffer layers in order to avoid the proximity of the semi-insulating inP substrate. - the fabrication of field effect transistors using a metal semiconductor gate contact. Ln order to obtain very low gate leakage currents, a thin AllnAs barrier layer has been added in between the gate metal and the GainAs channel layer. High transconductances - 200 mS/mm for 1 micron gate length - have been measured. Moreover, MAG cutoff frequency above 35 Ghz were obtained
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Cohen-Jonathan, Cécile. "Photodiodes à avalanche à multi puits quantiques AllnAs/AlGaInAs, à éclairage latéral pour les télécommunications à 20 Gbit/s." Grenoble 1, 1998. http://www.theses.fr/1998GRE10089.

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L'objet de ce travail est la conception et la realisation de photodiodes a avalanche a multi-puits quantiques a eclairage lateral pour les telecommunications optiques. Ces photodiodes permettent d'obtenir des produits gain-bande eleves et d'envisager la realisation de photorecepteurs tres sensibles et fonctionnant a 20 gbit/s. Les couches sont epitaxiees par jets moleculaires. Les epaisseurs de la couche d'absorption et d'avalanche ont ete definies par la resolution des equations de courants dans les differentes zones. Les resultats ont abouti a des produits gain-bande simules situes entre 130 ghz et 170 ghz. La zone de transition, permettant la repartition des champs electriques dans les zones d'avalanche et d'absorption, a ete definie en resolvant l'equation de poisson. L'etude du champ electrique et de la capacite a permis de determiner une zone de transition graduelle non dopee, intercalee entre deux fines zones dopees p. L'optimisation des couches de confinement est necessaire pour realiser des structures multimodes a forte sensibilite. Les calculs des modes guides et de la sensibilite (autour de 0,9 a/w) ont abouti a des structures dissymetriques, simplifiant ainsi les etapes technologiques. La methode modale a ete validee par des calculs de puissance propagee (bpm) et par des calculs des modes guides en complexe, mettant en evidence l'influence des metallisations de contact sur la dependance de la sensibilite a la polarisation. Les differentes etapes technologiques ont ete mises au point, en particulier les etapes de gravure. Le nitrure de passivation sert egalement de couche anti-reflet. La technologie developpee est simple, reproductible et permet une caracterisation des composants directement sur tranche. Les composants realises ont donne des performances a l'etat de l'art. Les mesures de bruit ont permis de determiner des gains allant jusqu'a 30 et des facteurs d'exces de bruit inferieurs a 4 pour m=10. Les frequences de coupure, superieures a 20 ghz, conduisent a des produits gain-bande superieurs a 165 ghz. Les sensibilites de 10 a/w mesurees prouvent, pour la premiere fois, la faisabilite de photodiodes a avalanche sensibles et rapides. Ces caracteristiques, etablissant un nouvel etat de l'art dans le domaine, font de ces photodiodes d'excellentes candidates pour la photoreception a 20 gbit/s.
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Kremling, Stefan [Verfasser], Lukas [Gutachter] Worschech, and Jens [Gutachter] Pflaum. "Charakterisierung von InP und InGaN Quantenpunkten als Einzelphotonenquellen sowie von AlGaInAs Quantenpunkten in Zwischenband-Solarzellen / Stefan Kremling. Gutachter: Lukas Worschech ; Jens Pflaum." Würzburg : Universität Würzburg, 2014. http://d-nb.info/1102826693/34.

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Binet, Guillaume. "Conception de transmetteurs 1,3 µm par épitaxie sélective en phase vapeur aux organo-métalliques." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066524/document.

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Le développement des réseaux optiques et l’augmentation des interconnexions à courtes distances, amènent un besoin croissant en transmetteurs émettant à 1,3 µm, performants, peu énergivores et fabriqués à bas coût.Ainsi, l’intégration photonique monolithique, qui vise à juxtaposer plusieurs fonctions optiques dans un même circuit, est une solution. L’épitaxie sélective en phase vapeur aux organo-métalliques est une technique prometteuse pour cela. Elle permet, en une seule étape de croissance, de définir les structures des différents composants unitaires constituant le circuit intégré photonique. Il est nécessaire d’avoir un outil de simulation qui permet de modéliser la croissance sélective. Auparavant la modélisation proposée ne prenait en compte que des phénomènes de diffusion en phase vapeur et négligeait les phénomènes de surface. Une modélisation plus précise a été développée, fondée sur la relaxation de l’interface. En parallèle, nous avons conçu sept différentes structures actives, à base de multi-puits quantiques en matériaux AlGaInAs pour des composants DML et EML émettant à 1.3 µm. Nous avons fait des mesures de laser à contacts larges et des mesures d’absorption en photo-courant, pour sélectionner la meilleure structure.Une étude expérimentale de la croissance, à partir de microscopie électronique en transmission et de micro-diffraction aux rayons X, a permis de réaliser l’épitaxie sélective de la structure sélectionnée. Les composants fabriqués ont des performances à l’état de l’art avec une bande passante de 12,5 GHz pour un DML de 250 µm ainsi qu’un diagramme de l’œil ouvert à 32 Gbit/s avec un taux d’extinction dynamique de 10 dB, pour en EML
The development of passive optical networks and the increase of short-reach connections make an increasing need for efficient, energy-friendly and low-cost transmitters emitting at 1.3 µm.To this end, monolithic photonic integration, which aims to embed several optical functions into the same circuit, is a solution. Selective area growth (SAG) by metal-organic vapor-phase-epitaxy (MOVPE) seems to be an attractive technique to achieve this integration. This approach allows defining, in a single epitaxial step, the structures of the different unitary photonic functions constituting the photonic integrated circuit. One issue of this technique is the growth modeling, necessary to predict the material distribution. Previously, the model was only taking into account vapor phase diffusion phenomena, neglecting surface phenomena. Consequently a more accurate approach was developed, based on interface relaxation.Simultaneously, we designed seven different active structures, all based on AlGaInAs multi-quantum wells, in order to optimize the DML and EML devices emitting at 1.3µm . We performed wide area laser and photocurrent absorption measurements to select the best trade-off design for devices fabrication.In order to perform accurate SAG of the selected structure, experimental study has been done to optimize the growth using transmission electronic microscopy and X-ray micro-diffraction. Devices have been processed and exhibit state of the art performances. A bandwidth of 12.5 GHz was demonstrated for a 250 µm long DML and 32 Gbit/s open eye diagram with a 10 dB dynamic extinction ratio has been shown, on a EML with a 100 µm long EAM
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Books on the topic "AlGaInAs"

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Lizalde, Eduardo. Algaida. México: Editorial ALDUS, 2004.

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Algaida. Rei Amer, 1994.

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Lara, Javier Maqua. Amor Africano (Algaida Literaria). Algaida Editores S a, 2005.

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Blanco, Pilar. Mundos Disueltos (Algaida Literaria). Algaida Editores S a, 2005.

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Martin, Andrau. Bellisimas Personas (Algaida Literaria). Algaida Editores S a, 2005.

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Lara, Javier Maqua. Amor Africano (Algaida Literaria). Algaida Editores S a, 2005.

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Martin, Andrau. Bellisimas Personas (Algaida Literaria). Algaida Editores S a, 2005.

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Carnicer, Rafael Medina, Angel Carmona Poyato, Nicolas Luis Fernandez Garcia, Nicolas Garcia Pedrajas, and Irene Luque Ruiz. Fundamentos De Informatica (Algaida Universidad). Algaida Editores S a, 2005.

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Campos, Carmen Barroso, Carmen Lopez Martin, Pedro Pablo Perez Hernandez, Araceli De Los Rios Berjillos, and Adolfo Rodero Franganillo. Ejercicios De Macroeconomia (Algaida Universidad). Algaida Editores S a, 2005.

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Blanco, Pilar. La Luz Herida (Algaida Literaria). Algaida, 2005.

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Book chapters on the topic "AlGaInAs"

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Ranjith, R., S. Piramasubramanian, and M. Ganesh Madhan. "Distortion Analysis of 1.3 µm AlGaInAs/InP Transistor Laser." In Springer Proceedings in Physics, 425–32. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3908-9_52.

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Kremling, Stefan, Christian Schneider, Sven Höfling, Martin Kamp, and Alfred Forchel. "AlGaInAs Quantum Dots for Intermediate Band Formation in Solar Cell Devices." In Lecture Notes in Nanoscale Science and Technology, 167–86. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8148-5_7.

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Wang, Guohong, Xiaoyan Yi, Teng Zhan, and Yang Huang. "The AlGaInP/AlGaAs Material System and Red/Yellow LED." In Light-Emitting Diodes, 171–202. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_5.

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Nash, G. R. "Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs." In NATO Science for Peace and Security Series B: Physics and Biophysics, 113–22. Dordrecht: Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-0769-6_16.

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Tran, Thanh-Nam, and Le The Vinh. "Simulation of Ridge-Waveguide AlGaInP/GaInP Multiple-Quantum Well Diode Lasers." In Lecture Notes in Electrical Engineering, 258–63. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69814-4_26.

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Bour, David P. "AlGaInP QUANTUM WELL LASERS." In Quantum Well Lasers, 415–60. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-08-051558-8.50015-4.

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Pletschen, W., K. H. Bachem, P. J. Tasker, and K. Winkler. "AlGaInP/GaInAs/GaAs MODFET devices: candidates for optoelectronic integrated circuits." In European Materials Research Society Symposia Proceedings, 304–6. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81769-3.50048-6.

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Lee, Dong-Seon, and Sang Hyeon Kim. "Monolithic integration of AlGaInP red and InGaN blue/green LEDs." In Semiconductors and Semimetals, 345–87. Elsevier, 2021. http://dx.doi.org/10.1016/bs.semsem.2021.01.004.

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SCHNEIDER, R. P., J. A. LOTT, M. HAGEROTT CRAWFORD, and K. D. CHOQUETTE. "EPITAXIAL DESIGN AND PERFORMANCE OF AlGaInP RED (650–690 nm) VCSELs." In Selected Topics in Electronics and Systems, 97–138. WORLD SCIENTIFIC, 1995. http://dx.doi.org/10.1142/9789812830913_0005.

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Conference papers on the topic "AlGaInAs"

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Chelny, A., Alexander Savchuk, Oleg I. Rabinovich, Yu Akhmerov, M. Mezhenny, and Sergey Didenko. "AlGaInAs / InP laser heterostructure improvement." In Novel In-Plane Semiconductor Lasers XX, edited by Alexey A. Belyanin and Peter M. Smowton. SPIE, 2021. http://dx.doi.org/10.1117/12.2577020.

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Fang, Alexander W., Richard Jones, Hyundai Park, Oded Cohen, Mario J. Paniccia, and John E. Bowers. "Hybrid AlGaInAs-silicon evanescent racetrack laser." In LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting. IEEE, 2007. http://dx.doi.org/10.1109/leos.2007.4382662.

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Lv, Xiao-Meng, Heng Long, Ling-Xiu Zou, Qi-Feng Yao, Yong-Zhen Huang, Jin-Long Xiao, and Yun Du. "Directly modulated AlGaInAs-InP Microcylinder Lasers." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acpc.2012.af4a.19.

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Lv, Xiao-Meng, Heng LOng, Ling-xiu Zou, Qi-Feng Yao, Yong-Zhen Huang, JinLong Xiao, and Yun Du. "Directly modulated AlGaInAs-InP Microcylinder Lasers." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acp.2012.af4a.19.

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Sih, Jieh-Ping, T. M. Chou, Jay B. Kirk, Jerome K. Butler, Gary A. Evans, A. R. Mantie, Jack Koscinski, and Richard K. DeFreez. "Performance of ridge-guide AlGaInAs lasers." In Photonics West '97, edited by Hong K. Choi and Peter S. Zory. SPIE, 1997. http://dx.doi.org/10.1117/12.273791.

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Huang, Yong-Zhen, Ling-Xiu Zou, Xiao-Meng Lv, Heng Long, Yue-De Yang, Jin-Long Xiao, and Yun Du. "High Speed Modulation AlGaInAs/InP Microdisk Lasers." In 2014 International Semiconductor Laser Conference (ISLC). IEEE, 2014. http://dx.doi.org/10.1109/islc.2014.211.

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Bowers, John E., Hui-Wen Chen, Di Liang, Hsu-Hao Chang, Richard Jones, and Alex Fang. "Hybrid Silicon-AlGaInAs Lasers and Optical Modulators." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/iprsn.2010.imb1.

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Lin, Jian-Dong, Yong-Zhen Huang, Yue-De Yang, Qi-Feng Yao, Xiao-Meng Lv, Jin-Long Xiao, and Yun Du. "Single mode AlGaInAs/InP hexagonal resonator microlasers." In 2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim. IEEE, 2011. http://dx.doi.org/10.1109/iqec-cleo.2011.6193651.

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Hanke, Christian, Lutz Korte, Bruno D. Acklin, Martin Behringer, Gerhard Herrmann, Johann Luft, B. De Odorico, Marcel Marchiano, and Jens Wilhelmi. "High-power AlGaInAs/GaAs microstack laser bars." In Symposium on Integrated Optoelectronics, edited by Luke J. Mawst and Ramon U. Martinelli. SPIE, 2000. http://dx.doi.org/10.1117/12.382106.

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Praseuth, J. P., M. Quillec, and J. M. Gerard. "Molecular Beam Epitaxy Of AlGaInAs For Optoelectronics." In 1987 Symposium on the Technologies for Optoelectronics, edited by Alain P. Brenac. SPIE, 1987. http://dx.doi.org/10.1117/12.943571.

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Reports on the topic "AlGaInAs"

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Pijaili, S. Thermally robust optical semiconductor devices using molecular beam epitaxy grown AlGaInAs. Office of Scientific and Technical Information (OSTI), December 1997. http://dx.doi.org/10.2172/9794.

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Bhattacharya, P., and R. Gibala. Investigation on the MBE growth and properties of AlGaInAs/InP and InGaAs-InAlAs superlattices. Office of Scientific and Technical Information (OSTI), December 1989. http://dx.doi.org/10.2172/7122247.

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Shealy, James. Innovative Approaches to AlGaInN Homoepitaxial Thin Films. Fort Belvoir, VA: Defense Technical Information Center, February 2001. http://dx.doi.org/10.21236/ada387485.

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Mitchell, Christine Charlotte, David Martin Follstaedt, Michael J. Russell, Karen Charlene Cross, George T. Wang, James Randall Creighton, Andrew Alan Allerman, Daniel David Koleske, Stephen Roger Lee, and Michael Elliott Coltrin. Final report on LDRD project : outstanding challenges for AlGaInN MOCVD. Office of Scientific and Technical Information (OSTI), March 2005. http://dx.doi.org/10.2172/922744.

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