Relevant bibliographies by topics / AlN thin films

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'AlN thin films'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "AlN thin films"

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Vasilyev, V., J. Cetnar, B. Claflin, et al. "Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications." MRS Advances 1, no. 39 (2016): 2711–16. http://dx.doi.org/10.1557/adv.2016.510.

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ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement
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Jouan, Pierre Yves, Arnaud Tricoteaux, and Nicolas Horny. "Elaboration of nitride thin films by reactive sputtering." Rem: Revista Escola de Minas 59, no. 2 (2006): 225–32. http://dx.doi.org/10.1590/s0370-44672006000200013.

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The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-trans
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Wang, Xiao-Dong, K. W. Hipps, J. T. Dickinso, and Ursula Mazur. "Amorphous or nanocrystalline AlN thin films formed from AlN: H." Journal of Materials Research 9, no. 6 (1994): 1449–55. http://dx.doi.org/10.1557/jmr.1994.1449.

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This work describes the formation of stoichiometric AlN films by single ion-beam sputtering of Al, using an ionized N2 (75%) + H2 (25%) mixture, onto substrates heated to 200 °C or above. The role of substrate temperature on film composition and properties is followed in the substrate temperature range between ambient and 250 °C. Infrared spectra of freshly prepared and 2 month old (aged in air) films demonstrate that substrate heating significantly affects the chemical nature of the resulting films. SEM and STM data, combined with IR and UV-visible spectral results, indicate that films formed
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Yang, Jing, Miao Miao Cao, Yu Dong Li, and Yi Gang Chen. "Structure and Optical Properties of Al1−xScxN Thin Films." Key Engineering Materials 537 (January 2013): 140–43. http://dx.doi.org/10.4028/www.scientific.net/kem.537.140.

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In this study, c-axis oriented AlN and Al1−xScxN films have been successfully grown on Si (100) and quartz glass by DC magnetron reactive sputtering method. The XRD patterns show that the crystal structure of the Al1−xScxN films is (002) orientation. The grain size and band gap energy (Eg) of the Al1−xScxN films decrease as the Sc concentration increases. The frequency of the E2 (high) mode observed in the Al1−xScxN films shows higher red shift compared to that observed in AlN film and the peak shifts to the low wave number with the increasing of Sc concentration.
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Jian, Sheng-Rui, Guo-Ju Chen, and Ting-Chun Lin. "Berkovich Nanoindentation on AlN Thin Films." Nanoscale Research Letters 5, no. 6 (2010): 935–40. http://dx.doi.org/10.1007/s11671-010-9582-5.

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Li, Wei, Yongyong Zhu, and Fafeng Xia. "Microstructure and erosion characteristics of Ni-AlN thin films prepared by electrodeposition." Science and Engineering of Composite Materials 23, no. 4 (2016): 395–400. http://dx.doi.org/10.1515/secm-2014-0182.

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AbstractNi-AlN thin films were successfully fabricated via direct-current (DC), pulse-current (PC), and ultrasonic-assisted pulse-current (UAPC) deposition. The microstructure, microhardness, and erosion characteristics of the Ni-AlN thin films were determined with the use of scanning probe microscopy (SPM), X-ray diffraction (XRD), Vickers hardness test, electrochemical station, and scanning electron microscopy (SEM). SPM results revealed that the Ni-AlN thin films synthesized by UAPC deposition have a compact and fine morphology with average grain diameters of the Ni and AlN particles of app
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Dovidenko, K., S. Oktyabrsky, and J. Narayan. "Inversion Domain Boundaries in Ain and GaN Thin Films." Microscopy and Microanalysis 4, S2 (1998): 636–37. http://dx.doi.org/10.1017/s1431927600023308.

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High-resolution transmission electron microscopy (HRTEM), multislice image simulation and multiple dark field TEM imaging techniques have been used to investigate the structure of extended defects in AlN and GaN thin films grown on (0001) α-Al2O3 by metal-organic chemical vapor deposition (MOCVD). AlN layers were grown directly on the (0001) sapphire. In the case of GaN thin films, 300-500 Å AlN buffer was deposited first.Cross-sectional TEM revealed the presence of domain boundaries in these Ill-nitride films. In this study we investigated these defects by multiple dark field imaging techniqu
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He, Xiangjun, Si-Ze Yang, Kun Tao, and Yudian Fan. "Investigation of the interface reactions of Ti thin films with AlN substrate." Journal of Materials Research 12, no. 3 (1997): 846–51. http://dx.doi.org/10.1557/jmr.1997.0123.

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Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures
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Bakri, Anis Suhaili, Nafarizal Nayan, Chin Fhong Soon, et al. "Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma." Microelectronics International 38, no. 3 (2021): 99–104. http://dx.doi.org/10.1108/mi-02-2021-0015.

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Purpose This paper aims to report the influence of sputtering plasma deposition time on the structural and mechanical properties of the a-axis oriented aluminium nitride (AlN) thin films. Design/methodology/approach The AlN films were prepared using RF magnetron sputtering plasma on a silicon substrate without any external heating with various deposition times. The films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), atomic force microscope (AFM) and nanoindentation techniques. Findings The XRD results show that the AlN thin films are hig
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Lee, Maw-Shung, Sean Wu, Shih-Bin Jhong, Kai-Huang Chen, and Kuan-Ting Liu. "Memory and Electrical Properties of (100)-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering." Journal of Nanomaterials 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/250439.

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The (100)-oriented aluminum nitride (AlN) thin films were well deposited onto p-type Si substrate by radio frequency (RF) magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002)- and (100)-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100)-oriented AlN thin films are better than those of (002)-oriented thin films.
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Dissertations / Theses on the topic "AlN thin films"

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Engelmark, Fredrik. "AlN and High-k Thin Films for IC and Electroacoustic Applications." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-2682.

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Further, a highly selective dry etch process for etching Al on AlN has been developed for the fabrication of MIM, MIS, SAW and BAW test structures for electrical and electroacoustic characterization of the films. A dielectric constant of 10 for AlN and 25 for Ti doped Ta2O5 have been measured. With respect to electroacoustic characterization, BAW measurements gave a longitudinal velocity of 11350 m/s and a TCD of -25ppm/K. AlN thin film test structures on SiO2/Si yielded a SAW velocity of around 5000 m/s, while those on polycrystalline diamond exhibited a SAW velocity of 11800 m/s. The latter
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Moreira, Milena de Albuquerque 1977. "Synthesis of thin piezoelectric ALN films in view of sensors and telecom applications = Síntese de filmes finos de ALN piezoelétrico para aplicações em sensores e dispositivos de alta frequência." [s.n.], 2014. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260817.

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Orientador: Ioshiaki Doi<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação<br>Made available in DSpace on 2018-08-26T04:10:17Z (GMT). No. of bitstreams: 1 Moreira_MilenadeAlbuquerque_D.pdf: 14247893 bytes, checksum: d1c3fea8288827b46285a590dc311de4 (MD5) Previous issue date: 2014<br>Resumo: Os requisitos do mercado consumidor de dispositivos de alta frequência têm sido cada vez mais exigentes nas últimas décadas. Assim, é necessária uma melhoria contínua no desempenho dos dispositivos a fim de atender a estes requisitos. Numa visão macr
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Hsieh, Peter Y. (Peter Yaw-ming) 1975. "DC magnetron reactive sputtering of low stress AlN piezoelectric thin films for MEMS application." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9736.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.<br>Includes bibliographical references (p. 59-60).<br>Microelectromechanical systems (MEMS) often incorporate piezoelectric thin films to actuate and detect motion of mechanical structures. Aluminum nitride is advantageous for MEMS use because it can be deposited at low temperatures, is easily patterned using conventional photolithographic techniques, and is compatible with CMOS contaminant requirements for silicon IC foundries. In this work, AIN thin films were deposited on silicon for use
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Guerra, Torres Jorge Andrés. "Optical characterization and thermal activation of Tb doped amorphous SiC, AlN and SiN thin films." Doctoral thesis, Pontificia Universidad Católica del Perú, 2017. http://tesis.pucp.edu.pe/repositorio/handle/123456789/9187.

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En la presente tesis se evalúan las propiedades ópticas y las características de emisión de luz de películas delgadas amorfas de AlN, SiN y SiC:H dopadas con Tb. La caracterización óptica se centra en la determinación del ancho de banda, la energía de Urbach y el foco de Urbach a partir de mediciones ópticas. Se desarrolla un modelo, basado en fluctuaciones térmicas de la banda, para describir la absorción fundamental sobrepuesta con las colas de Urbach. Luego, se realiza un análisis de la existencia y significado del foco de Urbach y se contrasta con modelo anterior. Uno de los principales re
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Giba, Alaa Eldin. "Films minces de nitrure d'aluminium dopés par des terres rares pour applications optiques." Thesis, Université de Lorraine, 2018. http://www.theses.fr/2018LORR0005/document.

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Ce projet est consacré à l'étude des propriétés optiques des films minces en nitrure d'aluminium dopé par des terres rares. Plus particulièrement, le travail est orienté pour étudier les mécanismes de luminescence des éléments RE sélectionnés incorporés dans des films minces AlN pour être utilisés comme candidats aux dispositifs d'éclairage. Au cours de cette thèse, la technique de pulvérisation de magnétron réactif est utilisée pour synthétiser les films minces AlN non dopés et dopés. La technique et le traitement des films sont discutés en détail. L'effet des conditions de pulvérisation sur
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Moura, Jos? Am?rico de Sousa. "Filmes nanom?tricos de FeN e ALN crescidos por sputtering e aplica??es do efeito peltier." Universidade Federal do Rio Grande do Norte, 2010. http://repositorio.ufrn.br:8080/jspui/handle/123456789/16572.

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Made available in DSpace on 2014-12-17T15:14:52Z (GMT). No. of bitstreams: 1 JoseASM_TESE.pdf: 5255189 bytes, checksum: cf0724bd476902a8aa17f19022619211 (MD5) Previous issue date: 2010-12-17<br>Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico<br>This study will show the capability of the reactive/nonreactive sputtering (dc/rf) technique at low power for the growth of nanometric thin films from magnetic materials (FeN) and widegap semiconductors (AlN), as well as the technological application of the Peltier effect using commercial modules of bismuth telluride (Bi2Te3). Of great t
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Fuentes, Iriarte Gonzalo. "AlN Thin Film Electroacoustic Devices." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://publications.uu.se/theses/91-554-5557-3/.

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DeSandre, Lewis Francis. "LASER DAMAGE MEASUREMENTS ON ALL-DIELECTRIC NARROW-BAND FILTERS." Thesis, The University of Arizona, 1985. http://hdl.handle.net/10150/275258.

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Rooth, Mårten. "Metal Oxide Thin Films and Nanostructures Made by ALD." Doctoral thesis, Uppsala University, Department of Materials Chemistry, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-8898.

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<p>Thin films of cobalt oxide, iron oxide and niobium oxide, and nanostructured thin films of iron oxide, titanium oxide and multilayered iron oxide/titanium oxide have been deposited by Atomic Layer Deposition (ALD). The metal oxides were grown using the precursor combinations CoI2/O2, Fe(Cp)2/O2, NbI5/O2 and TiI4/H2O. The samples were analysed primarily with respect to phase content, morphology and growth characteristics.</p><p>Thin films deposited on Si (100) were found to be amorphous or polycrystalline, depending on deposition temperature and the oxide deposited; cobalt oxide was also dep
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Lambert, Charles-Henri. "All-Optical Helicity dependent switching effect in magnetic thin films." Thesis, Université de Lorraine, 2015. http://www.theses.fr/2015LORR0091/document.

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Depuis une quinzaine d’années, de nombreuses solutions différentes ont été proposés afin de modifier l’aimantations de matériaux sans aucun champ magnétique extérieur appliqué. La manipulation d’aimantation à moindre coût énergétique, de préférence à des échelles de temps ultracourtes, est devenu un enjeu fondamental avec des implications pour les technologies d’enregistrement magnétique et de nouvelles sortes de stockage. Sur ce chemin, le type d’interaction découverte par Stanciu et al. ouvre la voie à l’utilisation de la lumière comme moyen d’exciter et de sonder directement les matériaux m
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Books on the topic "AlN thin films"

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Baer, Hester. German Cinema in the Age of Neoliberalism. Amsterdam University Press, 2021. http://dx.doi.org/10.5117/9789463727334.

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This book presents a new history of German film from 1980-2010, a period that witnessed rapid transformations, including intensified globalization, a restructured world economy, geopolitical realignment, and technological change, all of which have affected cinema in fundamental ways. Rethinking the conventional periodization of German film history, Baer posits 1980-rather than 1989-as a crucial turning point for German cinema's embrace of a new market orientation and move away from the state-sponsored film culture that characterized both DEFA and the New German Cinema. Reading films from East,
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DeMichael, Tom. Modern sci-fi films FAQ: All that's left to know about time travel, alien, robot, and out-of-this-world movies since 1970. Applause Theatre & Cinema Books, 2014.

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DC Magnetron Reactive Sputtering of Low Stress AlN Piezoelectric Thin Films for MEMS Application. Storming Media, 1999.

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1945-, Auciello Orlando, and Krauss Alan Robert, eds. In situ real time characterization of thin films: Edited by Orlando Auciello, Alan R. Krauss. Wiley, 2001.

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Damman, P. Instability of thin films. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198789352.003.0008.

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We will first discuss the stability of liquid films deposited on solid surfaces with an emphasis on the nature of intermolecular forces and thermal fluctuations that conspire to generate complex morphologies. We will see how the global dewetting dynamics is driven by the solid–fluid interface and that dewetting can be a powerful tool to study the nanorheology of complex fluids, such as polymer melts in ultra thin films. In the second part, we will consider thin elastic sheets constrained by mechanical forces. The canonical example of such a system is given by a simple paper ball. We will see h
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Netzer, Falko P., and Claudine Noguera. Oxide Thin Films and Nanostructures. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198834618.001.0001.

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Nanostructured oxide materials ultra-thin films, nanoparticles and other nanometer-scale objects play prominent roles in many aspects of our every-day life, in nature and in technological applications, among which is the all-oxide electronics of tomorrow. Due to their reduced dimensions and dimensionality, they strongly interact with their environment gaseous atmosphere, water or support. Their novel physical and chemical properties are the subject of this book from both a fundamental and an applied perspective. It reviews and illustrates the various methodologies for their growth, fabrication
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Conolly, Jez. The Thing. Liverpool University Press, 2014. http://dx.doi.org/10.3828/liverpool/9781906733773.001.0001.

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Consigned to the deep freeze of critical and commercial reception upon its release in 1982, The Thing has bounced back spectacularly to become one of the most highly regarded productions from the 1980s 'Body Horror' cycle of films, experiencing a wholesale and detailed reappraisal that has secured its place in the pantheon of modern cinematic horror. Thirty years on, and with a recent prequel reigniting interest, this book looks back to the film's antecedents and to the changing nature of its reception and the work that it has influenced. The themes discussed include the significance of The Th
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Shih, Shou-Po. Electrical characterization and aging studies of ALE ZnS:Mn ACTFEL devices with varying phosphor thicknesses. 1995.

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Conterio, Martyn. Black Sunday. Liverpool University Press, 2015. http://dx.doi.org/10.3828/liverpool/9781906733834.001.0001.

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Despite its reputation as one of the greatest and most influential of all horror films, there is surprisingly little literature dedicated to Mario Bava's Black Sunday (1960), and this work is the first single book dedicated to it. This book places the film in the historical context of being one of the first sound Italian horror films and how its success kick-started the Italian horror boom. It considers the particularly Italian perspective on the gothic that the film pioneered and its fresh and pioneering approach to horror tropes such as the vampire and the witch and considers how the casting
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Holliday, Christopher. The Computer-Animated Film. Edinburgh University Press, 2018. http://dx.doi.org/10.3366/edinburgh/9781474427883.001.0001.

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The Computer-Animated Film: Industry, Style and Genre is the first academic work to examine the genre identity of the computer-animated film, a global phenomenon of popular cinema that first emerged in the mid-1990s at the intersection of feature-length animated cinema and Computer-Generated Imagery (CGI). Widely credited for the revival of feature-length animated filmmaking within contemporary Hollywood, computer-animated films are today produced within a variety of national contexts and traditions. Covering thirty years of computer-animated film history, and analysing over 200 different exam
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Book chapters on the topic "AlN thin films"

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Schmid, Ulrich, and José Luis Sánchez-Rojas. "Piezoelectric Properties of Sputtered AlN Thin Films and their Applications." In Advances in Science and Technology. Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908158-11-7.41.

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Starman, LaVern A., Vladimir S. Vasilyev, Chad M. Holbrook, and John H. Goldsmith. "Pyroelectric AlN Thin Films Used as a MEMS IR Sensing Material." In MEMS and Nanotechnology, Volume 8. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-07004-9_7.

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Mu, Zong Xin, Ai Min Wu, Li Jia, Zhen Wei Wang, Hua Yu Zhao, and Shen Guang Liu. "Investigation of Mechanical and Structural Properties of AlN Thin Films Prepared by Mid-Frequency Pulsed Magnetron Sputtering." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.1185.

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Taurino, A., M. A. Signore, M. Catalano, M. Masieri, F. Quaranta, and P. Siciliano. "(002)-Oriented AlN Thin Films Sputtered on Ti Bottom Electrode for Flexible Electronics: Structural and Morphological Characterization." In Lecture Notes in Electrical Engineering. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-66802-4_7.

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Lott, Joseph, Hyunmin Song, Yeheng Wu, et al. "Coextruded Multilayer All-Polymer Dye Lasers." In Organic Thin Films for Photonic Applications. American Chemical Society, 2010. http://dx.doi.org/10.1021/bk-2010-1039.ch012.

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Muralt, Paul. "AlN Thin Film Processing and Basic Properties." In Microsystems and Nanosystems. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-28688-4_1.

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Doyle, Barbara Freedman. "Putting All This Together." In Understanding Design in Film Production. Routledge, 2019. http://dx.doi.org/10.4324/9781315163642-12.

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Kulova, Tatiana, Alexander Mironenko, Alexander Rudy, and Alexander Skundin. "Materials for All-Solid-State Thin-Film Batteries." In All Solid State Thin-Film Lithium-Ion Batteries. CRC Press, 2021. http://dx.doi.org/10.1201/9780429023736-2.

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Doyle, Barbara Freedman. "Why All This Talk about Authenticity?" In Understanding Design in Film Production. Routledge, 2019. http://dx.doi.org/10.4324/9781315163642-11.

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Zhou, Xuelin. "‘We all grow up like this’." In Youth Culture in Chinese Language Film. Routledge, 2016. http://dx.doi.org/10.4324/978131559124-3.

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Conference papers on the topic "AlN thin films"

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Oshikane, Yasushi. "Asymmetric metal-insulator-metal (MIM) structure formed by pulsed Nd:YAG laser deposition with titanium nitride (TiN) and aluminum nitride (AlN)." In Nanostructured Thin Films X, edited by Tom G. Mackay, Akhlesh Lakhtakia, and Yi-Jun Jen. SPIE, 2017. http://dx.doi.org/10.1117/12.2273483.

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Knöbber, F., O. Bludau, O. A. Williams, et al. "Diamond∕AlN Thin Films for Optical Applications." In 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗. AIP, 2010. http://dx.doi.org/10.1063/1.3518298.

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Lu, Yongfeng, ZhongMin Ren, H. Q. Ni, et al. "Pulsed-laser deposition of AlN thin films." In Symposium on High-Power Lasers and Applications, edited by Henry Helvajian, Koji Sugioka, Malcolm C. Gower, and Jan J. Dubowski. SPIE, 2000. http://dx.doi.org/10.1117/12.387554.

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Chang, Yu-Chen, Ying-Chung Chen, Kuo-Sheng Kao, et al. "Deposition of AlN thin films on LiTaO3 substrates." In 2017 International Conference on Applied System Innovation (ICASI). IEEE, 2017. http://dx.doi.org/10.1109/icasi.2017.7988566.

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Larson, John D., Sergey Mishin, and Stefan Bader. "Characterization of reversed c-axis AlN thin films." In 2010 IEEE Ultrasonics Symposium (IUS). IEEE, 2010. http://dx.doi.org/10.1109/ultsym.2010.5935971.

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Liang, Hai-feng, Yi-xin Yan, and Shu-fan Miao. "AlN thin films prepared by DC arc deposition." In 2nd international Symposium on Advanced Optical Manufacturing and Testing Technologies, edited by Li Yang, Shangming Wen, Yaolong Chen, and Ernst-Bernhard Kley. SPIE, 2006. http://dx.doi.org/10.1117/12.674289.

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Liu, Zhen, Bin Zhang, Tao Zhu, and Yigang Chen. "Study on growth optimization and metallization of AlN thin films." In Eighth International Conference on Thin Film Physics and Applications (TFPA13), edited by Junhao Chu and Chunrui Wang. SPIE, 2013. http://dx.doi.org/10.1117/12.2052818.

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Huang, Jian, Yiben Xia, Linjun Wang, et al. "Growth and characterization of AlN thin films on free-standing diamond substrates." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792638.

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Enlund, J., V. Yantchev, and I. Katardjiev. "4E-6 Electric Field Sensitivity of Thin Film Resonators Based on Piezoelectric AlN Thin Films." In 2006 IEEE Ultrasonics Symposium. IEEE, 2006. http://dx.doi.org/10.1109/ultsym.2006.125.

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Ushenko, Yuriy, P. D. Maryanchuk, M. M. Solovan, L. J. Pidkamin, and V. V. Brus. "Optical constants and polarimetric properties of AlN thin films." In Correlation Optics 2017, edited by Oleg V. Angelsky. SPIE, 2018. http://dx.doi.org/10.1117/12.2305365.

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Reports on the topic "AlN thin films"

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Davis, R. F., H. H. Lamb, I. S. Tsong, E. Bauer, and E. Chen. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films. Defense Technical Information Center, 1997. http://dx.doi.org/10.21236/ada338206.

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Wang, Qing-Ming. Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation. Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada532761.

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Son, K. A., J. C. Barbour, N. Missert, et al. Pit initiation in AlO{sub x}/Al thin films. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/307973.

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BOYLE, TIMOTHY J., DAVID INGERSOLL, RANDALL T. CYGAN, MARK A. RODRIGUEZ, KAMYAR RAHIMIAN, and JAMES A. VOIGT. All-Ceramic Thin Film Battery. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/805862.

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Boyd, Iain D. Modeling of an Arcjet Plume for Thin Film Synthesis. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada383148.

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Wang, J. J. AN INNOVATIVE TECHNIQUE FOR THIN FILM INTERFACE TOUGHNESS RESEARCH. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/885569.

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Peyghambarian, N., N. R. Armstrong, H. Hall, A. Padias, and S. Mazumdar. An Organic Thin Film Laser Diode: A Novel Light Source. Defense Technical Information Center, 1994. http://dx.doi.org/10.21236/ada289007.

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Davis, R. F., H. H. Lamb, and S. T. Tsong. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AIN, GaN and SiC Thin Films. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada353949.

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Ilias, S., F. G. King, Ting-Fang Fan, and S. Roy. Separation of Hydrogen Using an Electroless Deposited Thin-Film Palladium-Ceramic Composite Membrane. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/419403.

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Beeler, S. C., G. M. Kepler, H. T. Tran, and H. T. Banks. Reduced Order Modeling and Control of Thin Film Growth in an HPCVD Reactor. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada451933.

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