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Dissertations / Theses on the topic 'AlN thin films'

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Published: 4 June 2021
Last updated: 1 February 2022

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1

Engelmark, Fredrik. "AlN and High-k Thin Films for IC and Electroacoustic Applications." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-2682.

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Further, a highly selective dry etch process for etching Al on AlN has been developed for the fabrication of MIM, MIS, SAW and BAW test structures for electrical and electroacoustic characterization of the films. A dielectric constant of 10 for AlN and 25 for Ti doped Ta2O5 have been measured. With respect to electroacoustic characterization, BAW measurements gave a longitudinal velocity of 11350 m/s and a TCD of -25ppm/K. AlN thin film test structures on SiO2/Si yielded a SAW velocity of around 5000 m/s, while those on polycrystalline diamond exhibited a SAW velocity of 11800 m/s. The latter
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2

Moreira, Milena de Albuquerque 1977. "Synthesis of thin piezoelectric ALN films in view of sensors and telecom applications = Síntese de filmes finos de ALN piezoelétrico para aplicações em sensores e dispositivos de alta frequência." [s.n.], 2014. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260817.

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Orientador: Ioshiaki Doi<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação<br>Made available in DSpace on 2018-08-26T04:10:17Z (GMT). No. of bitstreams: 1 Moreira_MilenadeAlbuquerque_D.pdf: 14247893 bytes, checksum: d1c3fea8288827b46285a590dc311de4 (MD5) Previous issue date: 2014<br>Resumo: Os requisitos do mercado consumidor de dispositivos de alta frequência têm sido cada vez mais exigentes nas últimas décadas. Assim, é necessária uma melhoria contínua no desempenho dos dispositivos a fim de atender a estes requisitos. Numa visão macr
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3

Hsieh, Peter Y. (Peter Yaw-ming) 1975. "DC magnetron reactive sputtering of low stress AlN piezoelectric thin films for MEMS application." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9736.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.<br>Includes bibliographical references (p. 59-60).<br>Microelectromechanical systems (MEMS) often incorporate piezoelectric thin films to actuate and detect motion of mechanical structures. Aluminum nitride is advantageous for MEMS use because it can be deposited at low temperatures, is easily patterned using conventional photolithographic techniques, and is compatible with CMOS contaminant requirements for silicon IC foundries. In this work, AIN thin films were deposited on silicon for use
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4

Guerra, Torres Jorge Andrés. "Optical characterization and thermal activation of Tb doped amorphous SiC, AlN and SiN thin films." Doctoral thesis, Pontificia Universidad Católica del Perú, 2017. http://tesis.pucp.edu.pe/repositorio/handle/123456789/9187.

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En la presente tesis se evalúan las propiedades ópticas y las características de emisión de luz de películas delgadas amorfas de AlN, SiN y SiC:H dopadas con Tb. La caracterización óptica se centra en la determinación del ancho de banda, la energía de Urbach y el foco de Urbach a partir de mediciones ópticas. Se desarrolla un modelo, basado en fluctuaciones térmicas de la banda, para describir la absorción fundamental sobrepuesta con las colas de Urbach. Luego, se realiza un análisis de la existencia y significado del foco de Urbach y se contrasta con modelo anterior. Uno de los principales re
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5

Giba, Alaa Eldin. "Films minces de nitrure d'aluminium dopés par des terres rares pour applications optiques." Thesis, Université de Lorraine, 2018. http://www.theses.fr/2018LORR0005/document.

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Ce projet est consacré à l'étude des propriétés optiques des films minces en nitrure d'aluminium dopé par des terres rares. Plus particulièrement, le travail est orienté pour étudier les mécanismes de luminescence des éléments RE sélectionnés incorporés dans des films minces AlN pour être utilisés comme candidats aux dispositifs d'éclairage. Au cours de cette thèse, la technique de pulvérisation de magnétron réactif est utilisée pour synthétiser les films minces AlN non dopés et dopés. La technique et le traitement des films sont discutés en détail. L'effet des conditions de pulvérisation sur
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6

Moura, Jos? Am?rico de Sousa. "Filmes nanom?tricos de FeN e ALN crescidos por sputtering e aplica??es do efeito peltier." Universidade Federal do Rio Grande do Norte, 2010. http://repositorio.ufrn.br:8080/jspui/handle/123456789/16572.

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Made available in DSpace on 2014-12-17T15:14:52Z (GMT). No. of bitstreams: 1 JoseASM_TESE.pdf: 5255189 bytes, checksum: cf0724bd476902a8aa17f19022619211 (MD5) Previous issue date: 2010-12-17<br>Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico<br>This study will show the capability of the reactive/nonreactive sputtering (dc/rf) technique at low power for the growth of nanometric thin films from magnetic materials (FeN) and widegap semiconductors (AlN), as well as the technological application of the Peltier effect using commercial modules of bismuth telluride (Bi2Te3). Of great t
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7

Fuentes, Iriarte Gonzalo. "AlN Thin Film Electroacoustic Devices." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://publications.uu.se/theses/91-554-5557-3/.

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8

DeSandre, Lewis Francis. "LASER DAMAGE MEASUREMENTS ON ALL-DIELECTRIC NARROW-BAND FILTERS." Thesis, The University of Arizona, 1985. http://hdl.handle.net/10150/275258.

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9

Rooth, Mårten. "Metal Oxide Thin Films and Nanostructures Made by ALD." Doctoral thesis, Uppsala University, Department of Materials Chemistry, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-8898.

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<p>Thin films of cobalt oxide, iron oxide and niobium oxide, and nanostructured thin films of iron oxide, titanium oxide and multilayered iron oxide/titanium oxide have been deposited by Atomic Layer Deposition (ALD). The metal oxides were grown using the precursor combinations CoI2/O2, Fe(Cp)2/O2, NbI5/O2 and TiI4/H2O. The samples were analysed primarily with respect to phase content, morphology and growth characteristics.</p><p>Thin films deposited on Si (100) were found to be amorphous or polycrystalline, depending on deposition temperature and the oxide deposited; cobalt oxide was also dep
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10

Lambert, Charles-Henri. "All-Optical Helicity dependent switching effect in magnetic thin films." Thesis, Université de Lorraine, 2015. http://www.theses.fr/2015LORR0091/document.

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Depuis une quinzaine d’années, de nombreuses solutions différentes ont été proposés afin de modifier l’aimantations de matériaux sans aucun champ magnétique extérieur appliqué. La manipulation d’aimantation à moindre coût énergétique, de préférence à des échelles de temps ultracourtes, est devenu un enjeu fondamental avec des implications pour les technologies d’enregistrement magnétique et de nouvelles sortes de stockage. Sur ce chemin, le type d’interaction découverte par Stanciu et al. ouvre la voie à l’utilisation de la lumière comme moyen d’exciter et de sonder directement les matériaux m
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11

Schäfer, Christian Martin. "Towards organic-inirganic hybrid thin films deposited by ALD/MLD." Master's thesis, Universidade de Aveiro, 2017. http://hdl.handle.net/10773/22267.

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Mestrado em Química<br>A técnica de deposição por camada atómica (ALD) permite a deposição de filmes finos em fase de vapor de alta qualidade com um controlo de espessura à nano-escala. No presente trabalho foi demonstrado a deposição de filmes finos de óxido de zinco (ZnO) por ALD de elevada uniformidade em diferentes substratos, incluído nano-estruturas como por exemplo, nanotubos de carbono. Demonstrou-se por difracção de raio-X que o processo de deposição do ZnO originou a formação da estrutura da hexagonal, na fase wurtzite, com uma taxa de crescimento por ciclo de 1.9 Å. A deposição de
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12

Widmann, Frédéric. "Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10234.

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Ce travail a porte sur la croissance epitaxiale des nitrures d'elements iii gan, aln, et inn, en utilisant l'epitaxie par jets moleculaires assistee par plasma d'azote. Nous avons optimise les premiers stades de la croissance de gan ou aln sur substrat al#2o#3 (0001). Le processus utilise consiste a nitrurer la surface du substrat a l'aide du plasma d'azote, afin de la transformer en aln, puis a faire croitre une couche tampon d'aln ou de gan a basse temperature, avant de reprendre la croissance de gan ou aln a haute temperature (680 a 750c). Nous avons en particulier etudie les proprietes d'u
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13

Wu, Xin. "TiO2 Thin Film Interlayer for Organic Photovoltaics." Thesis, The University of Arizona, 2015. http://hdl.handle.net/10150/582369.

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TiO2 films as electron collecting interlayers are important in determining the efficiency of organic photovoltaics (OPVs). Various methods of film deposition have been explored, and they revealed the tradeoff between pinhole free coverage (large shunt resistance) and small film thickness (small series resistance). It is hypothesized that atomic layer deposition (ALD) with its self-limiting nature and sub-nanometer level control would be able to circumvent this problem and provide TiO2 films of pinhole free coverage and small thickness. TiO2 films made by chemical vapor deposition (CVD) and ALD
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14

Mockute, Aurelija. "Characterization of Oxygen-rich Ti2AlC Thin Films." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15059.

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<p>In this Thesis Ti-Al-C thin films deposited by cathodic arc at 700, 800 and 900 °C were investigated with respect to composition, structure and mechanical properties. The highest growth temperature resulted in close to single crystalline Ti<sub>2</sub>AlC MAX phase.</p><p> </p><p>A high oxygen incorporation of 7-12 at.% was detected in all the films, likely originating from residual gas and the Al<sub>2</sub>O<sub>3</sub> substrate. It was evident that the characteristic nanolaminated MAX phase structure was retained upon deflection from the ideal MAX phase stoichiometry.</p><p> </p><p>Hard
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15

Martin, David Michael. "Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-100957.

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In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. This has hastened the ne
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16

Jiang, Chen. "All-inkjet-printed low-voltage organic thin-film transistors." Thesis, University of Cambridge, 2019. https://www.repository.cam.ac.uk/handle/1810/285012.

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This thesis presents the development of all-inkjet-printed low-voltage organic thin-film transistors. Organic thin-film transistors (OTFTs), taking advantage of low-temperature printability, mechanical flexibility, and multi-functionality, are promising for a wide range of emerging applications such as wearable electronics. Printed OTFTs provide great benefits in fabrication cost reduction, but they need a very high operating voltage and exhibit severe instability during storage and operation in ambient environment. In this study, all-inkjet-printed OTFTs with a low operating voltage of less t
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17

Guttman, Jeremy. "Polymer-based Tunnel Diodes Fabricated using Ultra-thin, ALD Deposited, Interfacial Films." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469125487.

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18

Budnitzki, Michael. "Influence of the environment and alumina coatings on the fatigue degradation of polycrystalline silicon films." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/31766.

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Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Pierron, Olivier N.; Committee Member: McDowell, David L.; Committee Member: Neu, Richard W.. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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19

Heineman, Dawn Laurel. "Optimization of ALD grown titania thin films for the infiltration of silica photonic crystals." Thesis, Available online, Georgia Institute of Technology, 2004:, 2004. http://etd.gatech.edu/theses/available/etd-05142004-143254/unrestricted/heineman%5Fdawn%5Fl%5F200407%5Fms.pdf.

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Thesis (M.S.)--School of Materials Science and Engineering, Georgia Institute of Technology, 2005. Directed by Christopher Summers.<br>Summers, Christopher, Committee Chair ; Snyder, Robert, Committee Member ; Wang, Zhong Lin, Committee Member. Includes bibliographical references.
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20

Baumert, Eva K. "Influence of the environment on the fatigue properties of alumina ultra-thin coatings and silicon and nickel thin films." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/49114.

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This dissertation presents the investigation of three thin film materials used in microelectromechanical systems (MEMS): alumina, silicon, and nickel. For this purpose, novel experimental techniques to test thin films under MEMS-relevant loading conditions were developed in order to study environmental effects and the underlying fatigue mechanisms of amorphous alumina ultra-thin coatings, mono-crystalline brittle silicon thin films, and poly-crystalline ductile nickel thin films. Knowledge of these mechanisms is necessary to improve the reliability of MEMS, especially of those devices operatin
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21

Lee, Feng-Zhi, and 李縫治. "Deposition of AlN Thin Films by Coherent Magnetron Sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/65756683394843599385.

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博士<br>國立中山大學<br>機械與機電工程學系研究所<br>93<br>Polycrystalline AlN thin films were reactively deposited onto Al layers on negatively biased glass and Si substrates at temperatures < 80 oC by coherent magnetron sputtering. The target-to-substrate distance is 17 cm. The microstructures and morphology of the films grown at different bias voltages on the substrates were investigated. Typical thickness of the deposited film is 600 nm. The films were amorphous when no bias was applied to the substrates. Diffraction peak of AlN (002) direction was observed at bias voltages of -180 and -210 V. At a bias voltag
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22

Yang, Chun-hung, and 楊畯閎. "The Liquid Sensor Using Shear-Mode Thin Film Bulk Acoustic Resonator with AlN Films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/84729392939378800180.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>99<br>Shear-mode thin film bulk acoustic resonator (TFBAR) devices with c-axis tilted AlN films are fabricated for the application of liquid sensors. To fabricate shear-mode TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric AlN thin films is adopted and influences of the relative distance and the sputtering parameters are investigated. The shrar-mode phenomenon of a TFBAR results from the tilted crystalline orientation of AlN thin films. In this thesis, the AlN thin films are deposited with tilting angles of 15° and 23°, set
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Jhang, Dun-Sin, and 張惇欣. "Studies of Pulsed DC Reactive Magnetron Sputtering of AlN Thin Films." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/09535441567668818923.

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碩士<br>國立東華大學<br>材料科學與工程學系<br>94<br>The crystal orientation of deposited AlN film is important since the piezoelectric properties of this film are strongly related to its orientation. The aim of this thesis is to deposit highly textured (002) AlN film on (100) Si substrate using pulsed DC reactive magnetron sputtering. There are three parts of this study. First, in order to have a general understanding of the basic characteristics of the reactive sputtering process of AlN thin film, we compared the hysteresis behaviors of aluminum nitride with that of aluminum oxide. The results show that when
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24

Hsu, Chih-Ming, and 許智明. "Synthesis and Characterization of BN Thin Films and BN/AlN Multilayers." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/85263949673103903616.

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碩士<br>國立東華大學<br>材料科學與工程學系<br>91<br>Cubic boron nitride (c-BN) films and BN/AlN multilayers were deposited with a reactive magnetron sputtering system from boron carbide (B4C) and Aluminum (Al) targets in argon-nitrogen plasma. This thesis focuses on the preparation and characterization of the BN and BN/AlN systems. A combination of XPS, FTIR absorption spectroscopy, XRD, SEM, and surface profilometer were used to characterize the films and the multilayers. FTIR spectra confirm the formation of c-BN and h-BN in the as-prepared films. Maximum c-BN content of BN films obtained is 85% at subst
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Chen, Wen Rong, and 陳文榮. "Deposition of AlN Thin Films on GaAs Substrates by Reactive RF Sputtering." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/36521906398187370377.

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碩士<br>國立中山大學<br>電機工程研究所<br>84<br>In this paper, we try to deposit c-axis oriented AlN films with smooth surface, good adhesion and strong piezoelectricity on GaAs substrates by reactive RF sputtering for the applications of SAW devices. The dependence of crystallization and surface morphology is investigated such as sputtering pressure, nitrogen concentration (N2/N2+Ar), RF power, and substrate temperature. The XRD and SEM results show that the structural characteristics and surface morphlo
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26

Yao, Li-Ren, and 姚力仁. "Low-vacuum preparation of Al and AlN thin films by magnetron sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/80713755696017924667.

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27

Hsieh, Jen-Hsiang, and 謝仁翔. "Characterization of optical nonlinearity of AlN thin films by Z-scan method." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/yc725m.

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碩士<br>中原大學<br>電子工程研究所<br>103<br>This research use Z-scan method to measure and analysis the optical nonlinearity of epitaxy AlN films on sapphire substrate. The light source of Z-scan system is a 10Hz nanosecond Nd-YAG Q-switch 5HG (213nm) and SHG (532nm) laser. Its photon energy 5.82eV (wavelength: 213nm) is a little lower than AlN energy band gap 6.2eV. By the open aperture and close aperture experiment structure, we can get the nonlinear absorption coefficient and nonlinear refractive index of epitaxy AlN films. According to the results, the AlN films were abtained the nonlinear absorpti
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28

Moreira, Milena De Albuquerque. "Synthesis of Thin Piezoelectric AlN Films in View of Sensors and Telecom Applications." Doctoral thesis, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-229588.

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The requirements of the consumer market on high frequency devices have been more and more demanding over the last decades. Thus, a continuing enhancement of the devices’ performance is required in order to meet these demands. In a macro view, changing the design of the device can result in an improvement of its performance. In a micro view, the physical properties of the device materials have a strong influence on its final performance. In the case of high frequency devices based on piezoelectric materials, a natural way to improve their performance is through the improvement of the properties
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Lin, Jiu-sheng, and 林久勝. "The Study of (100) Oriented AlN Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/09083608365642123834.

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碩士<br>國立高雄應用科技大學<br>電子工程系<br>97<br>The (100) oriented AlN thin films have excellent bulk acoustic wave (BAW) and surface acoustic wave (SAW) properties. In this research, the (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputter conditions (RF powers, nitrogen concentrations, substrate temperatures and chamber pressures) were investigated by X-Ray diffraction (XRD)、atomic force microscopy (AFM) and transmission electron microscopy(TEM). The best (100) oriented AlN thin films were prepared with 350W RF power, 50
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Chiang, Luo-Ling, and 江洛玲. "Study on the BAW properties of Various Orientation AlN and ZnO Thin Films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/82718535152131818825.

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碩士<br>國立高雄應用科技大學<br>電子工程系<br>97<br>(002) oriented Aluminum Nitride(AlN) and zinc oxide (ZnO) thin films are widely used in the fabrication of resonator (FBAWR devices). For FBAW devices based on AlN and ZnO films, the goal, in general,is to grow films with a perfect c-axis orientation in order to excite the longitudinal thickness mode. Bulk acoustic wave analysis of (002)-,(100)-,and(103)-crystalline-plane-oriented AlN and ZnO films were studied in this research. This study uses finite element software to find different crystalline-plane-oriented AlN and ZnO films will form different vibration
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Yu, Jian-Shuo, and 余堅碩. "The Study of (103) Oriented AlN Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/96075960128106651753.

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碩士<br>國立高雄應用科技大學<br>電子與資訊工程研究所碩士班<br>96<br>The (103) oriented AlN thin films have excellent bulk acoustic wave (BAW) and surface acoustic wave (SAW) properties. In this research, the (103) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputter conditions (RF powers, nitrogen concentrations, substrate temperatures and chamber pressures) were investigated by X-Ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The best (103) oriented AlN thin films were prepared with 350W RF po
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Chao, Chien-po, and 趙建博. "Growth and Characterization of AlN Thin Films Deposition Using Dual Ion Beam Sputtering System." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/58464250556054123375.

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碩士<br>國立中山大學<br>材料科學研究所<br>92<br>Aluminum nitride (AlN) thin film is a promising material as buffer layer in GaN-based optoelectronic and electronic devices or as a substrate to fabricate Surface Acoustic Wave (SAW) and Film Bulk Acoustic wave Resonant (FBAR) devices in high frequency in wireless (>1GHz) communication technology. Aluminum nitride, thin film with the c-axis normal to the film is favored in a low energy deposition condition because it places the packed hexagonal basal plane parallel to the substrate surface. Grains of this orientation have a low surface energy which favors rapid
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Chen, Pei-An, and 陳沛安. "Fabrication of AlN Thin Films for Surface Acoustic Wave Devices by DC Reactive Sputtering." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/90153543848609989241.

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碩士<br>國立高雄第一科技大學<br>光電工程研究所<br>101<br>In this study, aluminum nitride (AlN) was used as piezoelectric material in surface acoustic wave (SAW) devices. The film structure is decided to be AlN/Ti/Si deposited on the silicon substrate by DC-reactive magnetron sputtering. We use the Al metal target (99.999% purity) at the sputtering system and adopt a high-purity Ar and N2 as the reaction gas. The experimental parameters are the target to substrate distance is 6 cm, Sputtering pressure is 1.4~3 mTorr, the gas ratio of Ar : N2 is 10:10~5:15, temperature is 25~200℃, the sputtering current was varied
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Lin, Zhi-Xun, and 林志勳. "Study on the BAW and SAW Properties of the AlN and ZnO Thin Films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/46539519589502545861.

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博士<br>國立高雄應用科技大學<br>電子工程系<br>97<br>Bulk acoustic wave analysis of all crystalline plane oriented AlN and ZnO thin films were studied in this thesis. Different crystalline plane oriented AlN and ZnO thin films will form different vibration modes and acoustic properties. The (002), (004), and (006) oriented AlN and ZnO thin films provided a pure longitudinal mode. The (100), (110), (200), (210), (300), and (220) oriented AlN and ZnO thin films provided a pure fast shear mode. The (101), (102), (103), (112), (201), (202), (104), (203), (211), (114), (212), (105), (204), (213), (302), (205), (106)
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Chen, Hong-Xiu, and 陳弘修. "Fabrication Study of Undoped and Si-doped AlN Thin Films Prepared by Helicon Sputtering Method." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/12653143487810096868.

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碩士<br>中原大學<br>電子工程研究所<br>100<br>Our research group has studied AlN thin films for a long time. The thin film growth, as well as the optoelectronic device applications, of AlN has been developed in the past. However, for more applications of AlN thin films, such as high power devices or deep UV optoelectronic devices, to enhance the quality and increase the conductivity of the AlN films have become inevitable issues. The quality of AlN films have been improved and optimized by adjusting the growth parameters. The crystallinity of the films were characterized by XRD and HRTEM. The dislocation d
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Ou, Tien-Fan, and 歐天凡. "The Influences of Sputtering Parameters on the Piezoelectric and Electromechanical Coupling Coefficients of AlN Thin Films." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/24790289583907335007.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>92<br>In this thesis, the c-axis-oriented AlN films were deposited on piezoelectric substrates, lithium niobate (LiNbO3), ST-Quartz, and non-piezoelectric substrate, silicon (Si), by reactive rf magnetron sputtering. AlN films were deposited with the nitrogen concentration (N2/Ar+N2) of 20∼80%, the chamber pressure of 1∼15mTorr, the rf power of 200∼450W, the deposition time of 1~3 hours and the substrate temperature of 100∼400℃. The correlation between growth parameters and piezoelectric coefficients will be investigated by XRD、d33 and K2 analysis in this study. Th
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Peng, Cheng Hung, and 彭正宏. "Study of AlN Thin Films for High-Power Light Emitting diode by High Heat Conduction Layer." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/7grx3m.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>99<br>In recent years, with the light-emitting diode LED to enhance the function, used in a wide range of products, but also the gradual integration in our daily life, light-emitting diode LED (Light Emitting Diode) light source for the energy saving than Traditional lighting with energy saving, energy saving and long service life. With the efforts of Governments to promote energy conservation policy and with the awareness of environmental protection, because incandescent bulbs have mercury pollution is disabled, plus mature LED technology, lighting, decreasing
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Kao, Kuo-Sheng, and 高國陞. "Growth of AlN Thin Films on LiNbO3 Substrates and the Applications on Surface Acoustic Wave Devices." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/53695961649172121194.

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碩士<br>國立中山大學<br>電機工程學系<br>87<br>Aluminum nitride (AlN) thin films were deposited on Z-cut LiNbO3 substrates using the reactive RF magnetron sputtering in this thesis. By means of the analyses of XRD, SEM and AFM, the optimal deposition conditions of highly C-axis oriented AlN films were sputtering pressure of 3.5 mTorr, nitrogen concentration (N2/N2+Ar) of 60%, RF power of 165W and substrate temperature of 400℃. In addition, the interdigital transducers (IDTs) were fabricated on LiNbO3 and AlN/LiNbO3 substrates, respectively. The effects of AlN film on the characteristics of SAW dev
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Zou, Zhi-xiong, and 鄒志雄. "Fabrication of AlN thin films by RF magnetron sputtering method and their surface acoustic wave applications." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/khqgq9.

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碩士<br>大同大學<br>光電工程研究所<br>95<br>Recently, most communication devices which are developing toward high frequency have become important. The high frequency surface acoustic wave (SAW) devices are one of them. High frequency SAW devices must have some properties such as large eletro-mechanical coupling coefficient, low insertion loss and high acoustic velocity. We can use different piezoelectric thin films and substrate material to get these properties. Because of its excellent piezoelectric property and high acoustic frequency(5600~6000 m/s), the c-axis oriented aluminum nitride(AlN) thin fil
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Sardar, Kripasindhu. "Nanostructures And Thin Films Of III-V Nitride Semiconductors." Thesis, 2005. http://etd.iisc.ernet.in/handle/2005/1392.

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Su, Wei-shiang, and 蘇暐翔. "Studies of GaN thin films and InGaN/GaN quantum wells on Si substrates with AlN buffer layers." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/80232853635099693506.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>100<br>We use micro-Raman spectra, scanning electron microscope, atomic force microscope, and photoluminescence spectra to study the properties of III-V nitride semiconductor materials grown on (111) Si substrates with different growth conditions of AlN buffer layers. The studies are divided into two parts. The first part is the growth of multiple AlN buffer layers with the decrease of growth temperature from 1000 to 700 oC. For the increase of the numbers of AlN buffer layer, it shows the blue shift of near band edge light emission energy and intensity, high energ
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Lee, Yi-Hung, and 李翊宏. "The study of temperature oefficient of SAW frequency for AlN thin films on LiNbO3 and ST-quartz." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/35383786811229108056.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>90<br>In this study, we use the reactive rf magnetron sputtering method with deposition parameters of RF power of 370W, sputtering pressure of 15 mTorr, substrate temperature of 400℃, nitrogen concentration (N2/N2+Ar) of 30% and 40%, to deposit highly c-axis orientation AlN thin films on Z-cut LiNbO3 and ST-cut quartz piezoelectric substrate, respectively. The material characteristics of AlN films deposited on Z-cut LiNbO3 and ST-cut quartz substrate with different thickness were obtained by means of the analyses of XRD, SEM and AFM. Besides, the interdigital trans
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Huei-YuLiou and 劉惠瑜. "Investigations of RF Sputtered AlN Thin Films with Different Orientations and Its Applications on Resistive Random Access Memories." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/x7v2nm.

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碩士<br>國立成功大學<br>電機工程學系<br>105<br>In recent years, the memory technology of semiconductor industry has been well developed. Resistance random access memory (RRAM) has potential to replace FLASH memory position in the nonvolatile memory (NVM). Because conductive bridge random access memory (CBRAM) has advantage of low power consumption and high memory window, finding for more suitable material for CBRAM is also critical issue to be investigated. Aluminum nitride (AlN), a metal nitride has many features in RRAM application and exhibits good insulator property without high process temperature. Nev
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Lu, Chia-Ming, and 呂嘉銘. "1.Defect analysis of GaN /AlN thin films on Si and LiAlO2 substrates2.Growth of Sapphire single crystal." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/08014785377088152258.

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碩士<br>國立中山大學<br>材料科學研究所<br>94<br>The main purpose of this study is focused on the defects within the layers of GaN over AlN thin films which were grown on the substrates of silicon (111) and LiAlO2 (100), respectively. The growth of three sapphire crystals is also addressed. During the epitaxial growth period, the Al pre-deposition time is very important for the defect on AlN/Si, and due to the high stacking fault energy, the partial dislocations in the AlN layers can not be observed. Cracks were found in the GaN films because of the great thermal mismatch between GaN itself and AlN which is u
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Mecouch, William J. "Preparation and characterization of thin, atomically clean GaN(0001) and AlN(0001) films and the deposition of thick GaN films via iodine vapor phase growth." 2005. http://www.lib.ncsu.edu/theses/available/etd-06142005-212822/unrestricted/etd.pdf.

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Yuan, Tzu-Tao, and 袁子滔. "The epitaxial study of Ⅲ-Nitride semiconductors thin films (AlN, GaN, InN) were grown on (0001) sapphire substrate by vertical reactor MOCVD system." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/20253207316902573188.

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博士<br>國防大學理工學院<br>國防科學研究所<br>98<br>In this study, Ⅲ-Nitride semiconductors thin films (AlN, GaN, InN) were grown on (0001) sapphire substrate by vertical reactor MOCVD system. Trimethylaluminum (TMAl), Trimethylgallium (TMGa) and Trimethylindium (TMIn) were used as group Ⅲ precursors. Ammonia (NH3) was group V precursors. Hydrogen (H2) and nitrogen (N2) were employed as carrier gas. We analyzed the characteristics of nitride thin films grown with different growth parameters, such as carrier gas flow, growth temperature, Ⅴ/Ⅲ ratio, gradient temperature growth and annealing temperature, etc. For
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LAI, HO-CHINE, and 賴和謙. "(I) Investigation of surface plasmon resonance behaviors of GaxZn1-xO thin films and (II) influence of AlN buffer layers on GaN films and InGaN/GaN quantum wells grown on Si substrates." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/d9wng5.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>107<br>There are two parts of investigations in this thesis. The first part is the study of plasmonic resonance of characteristics of GaxZn1-xO thin films grown on sapphire substrate with molecular beam epitaxy (MBE). Three series of samples are prepared for the variations of Ga and Zn effusion cell temperature and substrate temperature. The results exhibit that electron concentration of GaxZn1-xO thin films can reach 1020~1021 cm-3. Preferential orientation along (002) of X-ray diffraction (XRD) pattern is demonstrated in GaxZn1-xO thin films. For the GaxZn1-xO thi
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Chandrasekar, Hareesh. "Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives." Thesis, 2016. http://hdl.handle.net/2005/2740.

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Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these applications utilize device structures that employ a single or multiple hetero-junctions, with material compositions varying across the interface. For example, the workhorse of GaN based electronic devices is the high electron mobility transistor (HEMT) which is usually composed of an AlGaN/GaN hetero-junction, where a two-dimensional electron gas (2DEG) is formed due to dif
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Wagner, Brian Paul. "Conventional and pendeo-epitaxial growth of non-polar GaN(11-20) thin films on AlN/4H-SiC(11-20) substrates and their characterization and reduction in defect Density." 2005. http://www.lib.ncsu.edu/theses/available/etd-08092005-143918/unrestricted/etd.pdf.

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Dagur, Pritesh. "Thin Films From Metalorganic Precursors : ALD Of VO2 And CVD Of (Al1-xGax)2O3." Thesis, 2009. http://hdl.handle.net/2005/668.

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Thin films and coatings of oxides are used in various fields of science and technology, such as semiconductor and optoelectronic devices, gas sensors, protective and wear resistant coatings etc. Of late, there has been a tremendous interest in pure and doped vanadium dioxide as thermoelectric switch material. VO2 has been doped with hetero-atoms such as W, Mo, Nb, Ti etc. and effects of doping have been correlated with feasibility of being used as a smart window material. The oxide Al2O3 has been studied as an alternative gate dielectric. Ga2O3 is also a contender for replacing SiO2 as a diele
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