Relevant bibliographies by topics / Alternating-Current Thin-Film ElectroLuminescence (ACTFEL)

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Alternating-Current Thin-Film ElectroLuminescence (ACTFEL)'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "Alternating-Current Thin-Film ElectroLuminescence (ACTFEL)"

1

Rack, P. D., A. Naman, P. H. Holloway, S.-S. Sun, and R. T. Tuenge. "Materials Used in Electroluminescent Displays." MRS Bulletin 21, no. 3 (March 1996): 49–58. http://dx.doi.org/10.1557/s0883769400036137.

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The flat-panel-display (FPD) market is experiencing rapid growth due to increased demand for portable computers, communication equipment, and consumer electronic products. In all of these applications, the display is the primary human interface that conveys information. The size of the flat-panel-display market is presently estimated to be $10 billion/year and is projected to grow to over $18 billion/year by 1998. Although most current FPDs utilize either passive- or active-matrix liquid-crystal-display (LCD) technology, electroluminescent (EL) displays and light sources, because of their solid-state construction and self-emissive characteristics, can provide improved performance for many demanding display applications. Thin-film electroluminescent (TFEL) technology has been demonstrated over a broad range of display sizes from 1-in. to 18-in. diagonal with resolutions from 50 to 1,000 lines per inch. Also, because of its unique solid-state characteristic, TFEL technology is well-suited to provide a fully integrated display with the light-emitting element and electronics fabricated on the same substrate. An example of a full-color TFEL display is shown in Figure 1.Thin-film electroluminescent display panels are finding increasing applications in the FPD marketplace due to several fundamental performance advantages over LCDs. These include wide viewing angle, high contrast, wide operating-temperature range, ruggedness, and long lifetime. Alternating-current (ac)-driven monochrome TFEL displays (ACTFEL displays) have become the most reliable, longest running devices on the market. Commercial ACTFEL display panels have operated for more than 50,000 hours with less than 10% luminance change, the equivalent of 25 working years.
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Heikenfeld, J., and A. J. Steckl. "Alternating current thin-film electroluminescence of GaN:Er." Applied Physics Letters 77, no. 22 (November 27, 2000): 3520–22. http://dx.doi.org/10.1063/1.1330564.

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Baukol, B. A., J. C. Hitt, J. F. Wager, and S. S. Sun. "Electroluminescence thermal quenching in alternating-current thin-film electroluminescent devices." Journal of Applied Physics 90, no. 5 (September 2001): 2185–90. http://dx.doi.org/10.1063/1.1385570.

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Jayaraj, M. K., Aldrin Antony, and P. Deneshan. "Green electroluminescence from Zn1–xMgxS:Mn alternating current thin film electroluminescent devices." Thin Solid Films 389, no. 1-2 (June 2001): 284–87. http://dx.doi.org/10.1016/s0040-6090(01)00902-6.

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Kim, Joo Han, and Kyung Ho Yoon. "Alternating Current Electroluminescence and Structural Properties of Thin Film Gallium Oxide Doped with Manganese." Journal of the Korean Physical Society 53, no. 2 (August 14, 2008): 818–21. http://dx.doi.org/10.3938/jkps.53.818.

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Yuan, W., T. E. Wickramasinghe, and W. M. Jadwisienczak. "Design of Novel Deep Ultra-Violet ac-Driven Electroluminescence Devices Based on Boron Nitride nano-Materials." MRS Advances 5, no. 8-9 (2020): 421–30. http://dx.doi.org/10.1557/adv.2020.134.

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AbstractThe hexagonal boron nitride (h-BN) as a wide bandgap semiconductor is an attractive material for deep ultraviolet (DUV) generation. In this paper we study the prospect of using the stacking hexagonal boron nitride nanosheets (h-BNNS) for generating DUV emission by impact excitation in alternating current driven thin electroluminescence devices (ACTEL) based on BN phosphors having different morphologies. A theoretical approach considered is based on the impact excitation model for generating DUV from stacking h-BNNS under a high electric field. It was found that in the h-BNNS with a thickness of 90 nm biased at 3.33×109 V/m, the quantum yield can reach to 86.8%, and the power conversion efficiency of 1.68%. To achieve the same quantum yield and power conversion efficiency for the ACTEL based on h-BN single crystal, the active phosphor layer should be 2 μm thick when biased at 1.5×108 V/m.
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Dimitrova, V. I., F. Perjeru, Hong Chen, and M. E. Kordesch. "Green Emission from Er-Doped AlN Thin Films Prepared by RF Magnetron Sputtering." MRS Proceedings 621 (2000). http://dx.doi.org/10.1557/proc-621-q5.4.1.

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ABSTRACTThin films of Er doped AlN, ∼ 200 nm thick, were grown on indium tin oxide/aluminum titanium oxide/glass substrates using RF magnetron sputtering in a pure nitrogen atmosphere. To optically activate Er all films were subject to post-deposition annealing in flowing nitrogen atmosphere at atmospheric pressure at temperatures between 1023-1223 K for 10-60 minutes. The visible cathodoluminescence (CL) in the green was detected at both 11 K and 300K. The strongest CL peaks were observed at 558 nm and 537 nm (11 K), which correspond to the transitions from 4S3/2 and 2H11/2 to the 4I15/2 ground level. Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. The turn-on voltage was found to be around 80-100 V for our ACTFEL devices. The intensity of the EL emission rapidly increases with the voltage increasing in the investigated range of 110-130 V.
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Baca, R., J. A. Andraca, M. G. Arellano, G. R. Paredes, and R. P. Sierra. "Development of ZnO/Ta2O5 heterojunction using low-temperature technological processes." MRS Proceedings 1287 (2011). http://dx.doi.org/10.1557/opl.2011.1434.

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ABSTRACTZnO/Ta2O5 heterojunctions were formed on glass substrates using low temperature processes. Formerly insulating Ta2O5 films were deposited on glass substrates by vacuum evaporation using Ta2O5 powder, Afterwards transparent and conductive ZnO films were formed on the Ta2O5 films by thermal oxidation at 3200C in air atmosphere of zinc (Zn) films deposited by dc sputtering process. Structural and optical properties of ZnO were investigated by X-ray diffraction (XRD) and photoluminescence (PL). The Ta2O5 insulating films were characterized by Raman scattering. The ZnO/Ta2O5 heterojunction was characterized by current-voltage measurements at room temperature as well as transient response under a rectangular-pulse voltage source. The electrical and the transient response suggest that the ZnO/Ta2O5 heterojunction is a potential alternative for the fabrication of alternating-current-driven thin film electroluminescent (ACTFEL) devices.
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Schrage, Christian, and Stefan Kaskel. "Flexible and Transparent SWCNT Electrodes for Alternating Current Electroluminescence (ACEL) Devices." MRS Proceedings 1204 (2009). http://dx.doi.org/10.1557/proc-1204-k10-28.

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AbstractThe application of transparent single-walled carbon nanotube (SWCNT) electrodes in rigid and flexible alternating current electroluminescence (ACEL) devices is demonstrated. SWCNT thin film electrodes (50 – 160 nm) were made using a spray-coating process suitable for adjusting transparency and sheet resistance. The emission intensity was as high as for indium tin oxide (ITO) based ACEL devices with transparencies comparable to ITO coated polymer slides.
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Rau, Uwe, Thomas Kirchartz, Anke Helbig, and Bart Elger Pieters. "Electroluminescence imaging of Cu(In,Ga)Se2 thin film modules." MRS Proceedings 1165 (2009). http://dx.doi.org/10.1557/proc-1165-m03-04.

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AbstractElectroluminescence images gained from Cu(In,Ga)Se2 mini-modules under different voltage bias conditions are investigated. The mini-modules of area 20 × 20 cm2 with 42 cells exhibit typically 10-20 localized shunts. The consequences of these shunts on the performance of the individual cells and of the entire module are analyzed quantitatively by evaluating the electroluminescence images. Our evaluation method uses the fact that the electroluminescence intensity at each position in each cell within the module depends on the actual voltage drop over the junction at this specific location. Thus, the analysis of the electroluminescence intensity allows us to reconstruct the current/voltage characteristics of all individual cells in the module. In addition, we provide first simulations using a distributed diode network model to quantitatively explain the experimental results.
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Dissertations / Theses on the topic "Alternating-Current Thin-Film ElectroLuminescence (ACTFEL)"

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Chaichimansour, Mohammad. "Electro-optical characterization of alternating-current thin-film electroluminescence (ACTFEL) devices." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/15502.

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Ahmed, Mustafa M. Abdalla. "Alternating-Current Thin-Film Electroluminescent Device Characterization." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233432.

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Jádrem této disertační práce bylo studovat optické a elektrické charakteristiky tenkovrstvých elektroluminiscenčních součástek řízených střídavým proudem (ACTFEL) a zejména vliv procesu stárnutí luminiforů na jejich optické a elektrické vlastnosti. Cílem této studie měl být příspěvek ke zvýšení celkové účinnosti luminoforů, vyjádřené pomocí jasu, účinnosti a stability. Vzhledem k tomu, že současnou dominantní technologií plochých obrazovek je LCD, musí se další alternativní technologie plošných displejů porovnávat s LCD. Výhodou ACTFEL displejů proti LCD je lepší rozlišení, větší teplotní rozsah činnosti, větší čtecí úhel, či možnost čtení při mnohem vyšší intenzitě pozadí. Na druhou stranu je jejich nevýhodou vyšší energetická náročnost, problém s odpovídající barevností tří základních barev a podstatně vyšší napětí nutné pro činnost displeje. K dosažení tohoto cíle jsme provedli optická, elektrická a optoelektrická měření ACTFEL struktur a ZnS:Mn luminoforů. Navíc jsme studovali vliv dotování vrstvy pomocí KCl na chování mikrostruktury a na elektroluminiscenční vlastnosti (zejména na jas a světelnou účinnost) ZnS:Mn luminoforů. Provedli jsme i některá, ne zcela obvyklá, měření ACTFEL součástek. Vypočítali jsme i rozptylový poměr nabitých barevných center a simulovali transportní charakteristiky v ACTFEL součástkách. Studovali jsme vliv stárnutí dvou typů ZnS:Mn luminoforů (s vrstvou napařenou či získanou pomocí epitaxe atomových vrstev) monitorováním závislostí svítivost-napětí (L-V), velikost vnitřního náboje - elektrické pole luminoforu (Q-Fp) a kapacitance-napětí (C-V) ve zvolených časových intervalech v průběhu stárnutí. Provedli jsme krátkodobá i dlouhodobá měření a pokusili jsme se i o vizualizaci struktury luminoforu se subvlnovým rozlišením pomocí optického rastrovacího mikroskopu pracujícího v blízkém poli (SNOM). Na praktickém případu zeleného Zn2GeO4:Mn (2% Mn) ACTFEL displeje, pracujícího při 50 Hz, jsme také studovali stabilitu svítivosti pomocí měření závislosti svítivosti na napětí (L-V) a světelné účinnosti na napětí (eta-V). Přitom byl zhodnocen význam těchto charakteristik. Nezanedbatelnou a neoddělitelnou součástí této práce je i její pedagogický aspekt. Předložený text by mohl být využit i jako učebnice pro studenty na mé univerzitě v Lybii.
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Kale, Ajay. "Alternating current thin film electroluminescence in the near infrared from zinc sulfide doped with rare earths." [Gainesville, Fla.] : University of Florida, 2003. http://purl.fcla.edu/fcla/etd/UFE0002302.

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Book chapters on the topic "Alternating-Current Thin-Film ElectroLuminescence (ACTFEL)"

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Kitai, Adrian. "Alternating Current Thin Film and Powder Electroluminescence." In Materials for Solid State Lighting and Displays, 313–38. Chichester, UK: John Wiley & Sons, Ltd, 2016. http://dx.doi.org/10.1002/9781119140610.ch8.

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Conference papers on the topic "Alternating-Current Thin-Film ElectroLuminescence (ACTFEL)"

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Vlasenko, Nataliya A., A. I. Beletskii, Z. L. Denisova, Ya F. Kononets, and L. I. Veligura. "Use of photodepolarization spectra for diagnostics and characterization of alternating current thin-film electroluminescent (ACTFEL) devices." In International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, edited by Sergey V. Svechnikov and Mikhail Y. Valakh. SPIE, 1998. http://dx.doi.org/10.1117/12.306271.

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