Relevant bibliographies by topics / Aluminum gallium arsenides

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Academic literature on the topic 'Aluminum gallium arsenides'

Author: Grafiati
Published: 4 June 2021
Last updated: 14 February 2022

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Dissertations / Theses on the topic "Aluminum gallium arsenides"

1

Pon, Russell Michael. "Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185370.

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Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnA
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2

Johns, Steven 1964. "Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm". Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277949.

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The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and a GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump-probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10¹⁸ and 1.0 x 10¹⁸ cm⁻³ with carrier lifetimes of ≃ 2.3 ns and ≃ 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at r
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3

Rinzan, Mohamed Buhary. "Threshold extension of gallium arsenide/aluminum gallium arsenide terahetrz detectors and switching in heterostructures." unrestricted, 2006. http://etd.gsu.edu/theses/available/etd-10102006-204618/.

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Thesis (Ph. D.)--Georgia State University, 2006.<br>Title from title screen. Unil Perera, committee chair; Donald Edwards, Gennady Cymbaluyk, Mark Stockman, Nikolaus Dietz, Paul Wiita, committee members. Electronic text (348, 24-32 p. : ill.) : digital, PDF file. Description based on contents viewed June 8, 2007. Includes bibliographical references (p. 24-30, second sequence).
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4

Hendricks, Douglas Ray 1958. "REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276394.

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5

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t
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6

Lee, Sang Goo. "Subpicosecond all optical switching in passive and active gallium arsenide/aluminum gallium arsenide nonlinear directional couplers." Diss., The University of Arizona, 1996. http://hdl.handle.net/10150/187333.

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Subpicosecond all optical switching device is pursued using a passive GaAs/AlGaAs multiple quantum well nonlinear directional coupler and an active GaAs/AlGaAs nonlinear directional coupler. A passive device showed all-optical switching from 2:1 contrast ratio to 2:3 with optical pulses detuned below the heavy hole exciton resonance. Underlying mechanism for the ultrafast switching is identified as an adiabatic following in semiconductors. With an active nonlinear directional coupler made of superlattice core, we demonstrated the lowest switching energy device (6pJ) with fast response of a few
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7

Jeffery, Arvi Denbigh 1960. "MEASUREMENT AND MODELING OF THE NONLINEAR ABSORPTION AND REFRACTIVE INDEX OF BULK GALLIUM-ARSENIDE AND GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE MULTIPLE-QUANTUM-WELLS." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276435.

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8

Gupta, Jay Prakash. "Fabrication and characterization of gallium arsenide/aluminum gallium arsenide semiconductor ring laser for realization of miniature gyroscope." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 87 p, 2008. http://proquest.umi.com/pqdweb?did=1654493861&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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9

Baba-Ali, N. "Diffusion of sulphur and silicon in aluminium gallium arsenide." Thesis, University of Nottingham, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334989.

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10

Harrison, Paul. "Aspects of electron transport theory in gallium arsenide-aluminium arsenide superlattices and microstructures." Thesis, University of Newcastle Upon Tyne, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315580.

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