Log in

Relevant bibliographies by topics / Aluminum gallium arsenides / Dissertations / Theses

To see the other types of publications on this topic, follow the link: Aluminum gallium arsenides.

Dissertations / Theses on the topic 'Aluminum gallium arsenides'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 dissertations / theses for your research on the topic 'Aluminum gallium arsenides.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Pon, Russell Michael. "Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185370.

Full text

Abstract:

Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnA

APA, Harvard, Vancouver, ISO, and other styles

2

Johns, Steven 1964. "Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm". Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277949.

Full text

Abstract:

The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and a GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump-probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10¹⁸ and 1.0 x 10¹⁸ cm⁻³ with carrier lifetimes of ≃ 2.3 ns and ≃ 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at r

APA, Harvard, Vancouver, ISO, and other styles

3

Rinzan, Mohamed Buhary. "Threshold extension of gallium arsenide/aluminum gallium arsenide terahetrz detectors and switching in heterostructures." unrestricted, 2006. http://etd.gsu.edu/theses/available/etd-10102006-204618/.

Full text

Abstract:

Thesis (Ph. D.)--Georgia State University, 2006.<br>Title from title screen. Unil Perera, committee chair; Donald Edwards, Gennady Cymbaluyk, Mark Stockman, Nikolaus Dietz, Paul Wiita, committee members. Electronic text (348, 24-32 p. : ill.) : digital, PDF file. Description based on contents viewed June 8, 2007. Includes bibliographical references (p. 24-30, second sequence).

APA, Harvard, Vancouver, ISO, and other styles

4

Hendricks, Douglas Ray 1958. "REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276394.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

Full text

Abstract:

"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t

APA, Harvard, Vancouver, ISO, and other styles

6

Lee, Sang Goo. "Subpicosecond all optical switching in passive and active gallium arsenide/aluminum gallium arsenide nonlinear directional couplers." Diss., The University of Arizona, 1996. http://hdl.handle.net/10150/187333.

Full text

Abstract:

Subpicosecond all optical switching device is pursued using a passive GaAs/AlGaAs multiple quantum well nonlinear directional coupler and an active GaAs/AlGaAs nonlinear directional coupler. A passive device showed all-optical switching from 2:1 contrast ratio to 2:3 with optical pulses detuned below the heavy hole exciton resonance. Underlying mechanism for the ultrafast switching is identified as an adiabatic following in semiconductors. With an active nonlinear directional coupler made of superlattice core, we demonstrated the lowest switching energy device (6pJ) with fast response of a few

APA, Harvard, Vancouver, ISO, and other styles

7

Jeffery, Arvi Denbigh 1960. "MEASUREMENT AND MODELING OF THE NONLINEAR ABSORPTION AND REFRACTIVE INDEX OF BULK GALLIUM-ARSENIDE AND GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE MULTIPLE-QUANTUM-WELLS." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276435.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Gupta, Jay Prakash. "Fabrication and characterization of gallium arsenide/aluminum gallium arsenide semiconductor ring laser for realization of miniature gyroscope." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 87 p, 2008. http://proquest.umi.com/pqdweb?did=1654493861&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Baba-Ali, N. "Diffusion of sulphur and silicon in aluminium gallium arsenide." Thesis, University of Nottingham, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334989.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Harrison, Paul. "Aspects of electron transport theory in gallium arsenide-aluminium arsenide superlattices and microstructures." Thesis, University of Newcastle Upon Tyne, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315580.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Harten, Paul Alexander. "Ultrafast phenomena in gallium arsenide/aluminum gallium arsenide multiple quantum well waveguide structures using a near infrared femtosecond laser system." Diss., The University of Arizona, 1992. http://hdl.handle.net/10150/185954.

Full text

Abstract:

A near infrared hybridly mode-locked dye laser system consisting of a femtosecond oscillator and a high repetition rate dye amplifier was designed and built. This system was then applied to the study of room temperature below-bandgap femtosecond switching and coherent pulse propagation in GaAs/GaAlAs multiple quantum well waveguides. The noise properties of the oscillator output were studied using radio frequency spectrum analysis techniques. Two distinct modes of operation were identified: The first is characterized by the shortest pulse duration and its real-time autocorrelation signal appea

APA, Harvard, Vancouver, ISO, and other styles

12

Hsu, Chia Chen. "The nonlinear optical properties of KTP, 4BCMU, and gallium indium arsenide/aluminum indium arsenide multiple quantum well." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185611.

Full text

Abstract:

In this dissertation different nonlinear materials for applications in frequency generation and nonlinear optical switching devices are investigated. The important aspects for efficient frequency generation in a three-wave mixing interaction are introduced. Blue laser light generation by sum frequency mixing in a KTP crystal and the production of tunable infrared in a LiIO₃ crystal by difference frequency mixing are demonstrated. The third-order optical nonlinear susceptibities of single-crystaline and spin-coated amorphous P-4BCMU thin films are measured by third harmonic generation. The effe

APA, Harvard, Vancouver, ISO, and other styles

13

RODRIGUES, MARIA T. J. "Efeito terapeutico da irradiacao com laser de arseneto de galio aluminium (lambda = 830nm) em lesoes provocadas pelo aparelho ortodontico fixo na cavidade oral." reponame:Repositório Institucional do IPEN, 2001. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10868.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:44:54Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T13:59:59Z (GMT). No. of bitstreams: 1 07298.pdf: 2433148 bytes, checksum: 8f396ae78b062d2cba30d45b484a7b7d (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Intituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

14

Pfeffer, Tracey Lynn. "The investigation of novel dopant sources for N-type doping of gallium arsenide and aluminium gallium arsenide during chemical beam epitaxial growth." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.338627.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Warnick, Sean C. (Sean Charles). "Feedback control of organometallic vapor-phase epitaxial growth of aluminum gallium arsenide devices." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/11150.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Krol, Mark Francis. "Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures." Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187240.

Full text

Abstract:

An experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from the narrow well (NW) to the wide well (WW) at least as fast as electrons. At high carrier densities a two component decay is observed, consistent with phase-space filling and space-charge effects blocking tunneling carriers. The fast transfer of electrons was confirmed to be a LO-phonon assisted pro

APA, Harvard, Vancouver, ISO, and other styles

17

Thornton, Andrew Simon Graham. "Resonant tunnelling through zero dimensional quantum dots." Thesis, University of Nottingham, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298032.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Flitcroft, Richard M. "Wide bandgap collector III-V double heterojunction bipolar transistors." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341875.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

SUN, CHIEN YUAN. "Analise comparativa do efeito da irradiacao do laser de GaAlAS em 780 nm e 660 nm na hipersensibilidade dentinaria." reponame:Repositório Institucional do IPEN, 2003. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11096.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:48:16Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T13:57:22Z (GMT). No. of bitstreams: 1 08994.pdf: 2550778 bytes, checksum: cc9505b959ac4f50555ef0f15b346835 (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

20

Hill, Justin John. "Electron spectroscopic studies of aluminium based precursors on GaAs and Si surfaces." Thesis, Imperial College London, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.481514.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Angulo, Barrios Carlos. "Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3305.

Full text

Abstract:

<p>Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. In particular, if theconfinement (burying) layer is implemented by epitaxialregrowth of an appropriate aluminium-free semi-insulating (SI)material, passivation of etched surfaces, reduced tendency tooxidation, low capacitance and integration feasibility areadditional advanta

APA, Harvard, Vancouver, ISO, and other styles

22

FARINA, CASSIUS G. "Terapia laser em baixa intensidade em portadores de disfunção temporomandibular: avaliação eletromiográfica, potência muscular e dor." reponame:Repositório Institucional do IPEN, 2005. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11388.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:51:24Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T13:59:15Z (GMT). No. of bitstreams: 1 11294.pdf: 3974184 bytes, checksum: cdc677f76a33a1d11a50b88cd5eafccb (MD5)<br>Dissertacao (Mestrado)<br>IPEN/D<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP

APA, Harvard, Vancouver, ISO, and other styles

23

Hyunsik, I. M. "X-band related transport in GaAs/AIAs heterostructures under pressure and in magnetic fields." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302493.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

OLIVEIRA, GLEN A. M. de. "Estudo comparativo do efeito analgésico do laser em baixa intensidade de emissão infravermelha e da pasta de fluoreto de sódio a 33 porcento no tratamento da hipersensibilidade dentinária." reponame:Repositório Institucional do IPEN, 2003. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11335.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:50:49Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T13:59:03Z (GMT). No. of bitstreams: 1 09633.pdf: 2598713 bytes, checksum: 04d56bf4fb2ee6bee44fb5d6fc5b4c8c (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Intituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

25

Holm, Mark. "Vertical external cavity surface emitting semiconductor lasers." Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366824.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Rau, Georg. "Theory of the electronic and optical properties of GaAs/AlGaAs quantum wells under uniaxial stress." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298423.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Britton, Robert Stanley. "Spin dynamics of carriers in quantum wells." Thesis, University of Southampton, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310538.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Krol, Mark Francis 1966. "High contrast, all-optical gallium aluminum indium arsenide multiple quantum well asymmetric reflection modulator at 1.3 μm". Thesis, The University of Arizona, 1992. http://hdl.handle.net/10150/291348.

Full text

Abstract:

A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm², corresponding to a carrier density of 4.5 x 10¹⁷ cm⁻³ The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast rat

APA, Harvard, Vancouver, ISO, and other styles

29

Serapiglia, Gerard Brendan. "High intensity mid infra-red spectroscopy of intersubband transitions in semiconductor quantum wells." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.313400.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Hill, Daniel. "Growth initiation processes for GaAs and AlGaAs in CBE." Thesis, University of Liverpool, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.484292.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

ATIHE, MAURICIO M. "Reducao de processo inflamatorio com aplicacao de laser de arseneto de galio aluminio (lambda=830nm) em pos-operatorio de exodontias de terceiros molares inferiores inclusos ou semi-inclusos." reponame:Repositório Institucional do IPEN, 2002. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11046.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:47:26Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:08:48Z (GMT). No. of bitstreams: 1 08342.pdf: 2753488 bytes, checksum: bf31e3adc8085d45dd13cb74ef444fde (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Intituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

32

Boehme, Christopher M. "MBE growth of an Electronic-Photonic Integrated Circuit (EPIC) using the indium gallium aluminum arsenide/indium phosphide material system." Ann Arbor, Mich. : ProQuest, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1447229.

Full text

Abstract:

Thesis (M.S. in Electrical Engineering)--S.M.U., 2007.<br>Title from PDF title page (viewed Nov. 19, 2009). Source: Masters Abstracts International, Volume: 46-03, page: 1646. Adviser: Gary Evans. Includes bibliographical references.

APA, Harvard, Vancouver, ISO, and other styles

33

Chen, Yuping. "Investigation of generation-recombination noise and related processes in aluminum-gallium arsenide tegfets and hall structures with quatum wells." FIU Digital Commons, 1998. http://digitalcommons.fiu.edu/etd/2152.

Full text

Abstract:

Experimental and theoretical studies regarding noise processes in various kinds of AlGaAs/GaAs heterostructures with a quantum well are reported. The measurement processes, involving a Fast Fourier Transform and analog wave analyzer in the frequency range from 10 Hz to 1 MHz, a computerized data storage and processing system, and cryostat in the temperature range from 78 K to 300 K are described in detail. The current noise spectra are obtained with the “three-point method”, using a Quan-Tech and avalanche noise source for calibration. The properties of both GaAs and AlGaAs materials and field

APA, Harvard, Vancouver, ISO, and other styles

34

Chia, Ching Kean. "Impact ionisation in Alâ†xGaâ†1â†-â†xAs/GaAs heterojunction and multiple quantum well structures." Thesis, University of Sheffield, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.287690.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Bhatnagar, Anuj. "Investigation of electrorefraction associated with Wannier-Stark localisation." Thesis, University of York, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301685.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

VILELA, CARLOS E. C. "Monitoramento térmico e morfológico das superfícies de implantes orais durante a irradiação com laser de Nd:YAG ou GaAlAs." reponame:Repositório Institucional do IPEN, 2004. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11391.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:51:25Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:08:53Z (GMT). No. of bitstreams: 1 11306.pdf: 5168610 bytes, checksum: bc65302ba021a7b116fa1e5360103483 (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

37

CRUZ, DELMA R. "Efeitos da irradiacao com laser em baixa intensidade na velocidade de distalizacao de caninos durante a movimentacao ortodontica: 'estudo clinico comparativo'." reponame:Repositório Institucional do IPEN, 2003. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11106.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:48:27Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T13:57:27Z (GMT). No. of bitstreams: 1 09067.pdf: 2307940 bytes, checksum: 4e9de78dcd2bad1fdfed2be51564360b (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Intituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

38

BERTELLA, CLAUDIO. "Estudo histopatologico dos efeitos da irradiacao laser em baixa intensidade (lambda = 650 nm) em tecido pulpar apos preparo cavitario." reponame:Repositório Institucional do IPEN, 2001. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10939.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:45:51Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:07:51Z (GMT). No. of bitstreams: 1 07500.pdf: 3986960 bytes, checksum: 07fc4b3296930e1c4ae76854f24e6714 (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

39

REZENDE, SANDRA B. "Acao do diodo laser emitindo em 830 nm, sobre o processo de cicatrizacao de lesoes cutaneas: estudo biometrico e histologico em ratos." reponame:Repositório Institucional do IPEN, 2001. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10928.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:45:41Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:07:18Z (GMT). No. of bitstreams: 1 07609.pdf: 2103835 bytes, checksum: daf8a4e12257ed226478079afb3ed0d5 (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

40

RADAELLI, CLAUDIA A. R. de M. "Avaliacao da reducao bacteriana em conduto radicular infectado e irradiado com laser de diodo estudo in vitro." reponame:Repositório Institucional do IPEN, 2002. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11041.

Full text

Abstract:

Made available in DSpace on 2014-10-09T12:47:21Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:09:00Z (GMT). No. of bitstreams: 1 08363.pdf: 8633728 bytes, checksum: 4b637afdf2709474cb42eadeaa3a8b6a (MD5)<br>Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)<br>IPEN/D-MPLO<br>Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

APA, Harvard, Vancouver, ISO, and other styles

41

Ghin, Raymond. "Avalanche multiplication and breakdown in wide bandgap semiconductors." Thesis, University of Sheffield, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301673.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Choi, Hyun-jin. "Investigation of resonant Raman scattering in type II GaAs/A1As superlattices." Thesis, University of Oxford, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.365725.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Blin, Eric André. "Etude des phenomenes de degradation en fonctionnement des diodes electroluminescentes au gaalas : mise en evidence des differentes causes et determination de leur importance respective." Caen, 1987. http://www.theses.fr/1987CAEN2002.

Full text

Abstract:

On etudie les differentes causes pouvant degrader le fonctionnement des diodes electroluminescentes au gaalas-gaas (sciage, soudure de fil, contrainte exterieure, etc. ), quel est leur degre d'importance en vue d'ameliorer la fiabilite et la duree de vie de ces dispositifs deja commercialises

APA, Harvard, Vancouver, ISO, and other styles

44

Harmand, Jean-Christophe. "Possibilites offertes par l'epitaxie par jets moleculaires dans la croissance d'heterostructures gaas/gaalas pour transistors bipolaires." Paris 7, 1988. http://www.theses.fr/1988PA077072.

Full text

Abstract:

Ce travail concerne la fabrication de couches de semiconducteurs iii-v et la realisation de structures pour transistors bipolaires a heterojonction. Ces structures font appel aux composes gaas, gaalas et gainas elabores par epitaxie par jets moleculaires. On etudie l'influence des conditions de croissance sur les caracteristiques des materiaux et notamment l'evolution des coefficients de collage des elements iii et la pression minimale d'arsenic necessaire a la croissance. On tente de modeliser les resultats experimentaux par une approche thermodynamique de l'epitaxie par jets moleculaires. On

APA, Harvard, Vancouver, ISO, and other styles

45

Cammack, Darren S. "The control of metal-nInGaAs and nInAlAs interfaces by cryogenic processing." Thesis, Sheffield Hallam University, 1999. http://shura.shu.ac.uk/19420/.

Full text

Abstract:

The physical and chemical properties of In- and Au- interfaces with In[0.53]Ga[0.47]As/InP(100) and In[0.52]Al[0.48]As(100) formed at room and low temperatures have been studied. Current-voltage measurements have indicated that In contacts to Ino[0.53]Ga[0.47]As(100) formed at 80K exhibit significantly higher Schottky barriers (&phis;b=0.45 eV) than In diodes formed at 294K (&phis;b=0.30 eV), whereas Au diodes formed on In[0.53]Ga[0.47]As(100) at either low temperature or room temperature exhibit Ohmic behaviour. The reactions occurring during interface formation at room and low temperatures h

APA, Harvard, Vancouver, ISO, and other styles

46

Termanini, Mohamed Jalal. "Etude et optimisation d'un processus technologique de realisation de transistors bipolaires a heterojonction : application aux composants hyperfrequences de puissance." Toulouse 3, 1987. http://www.theses.fr/1987TOU30069.

Full text

Abstract:

Transistors a heterojonction gaalas/gaas. Apres un rappel theorique des proprietes des heterojonctions, un avant projet d'un transistor destine a l'amplification haute frequence de puissance a ete propose. Nous avons ensuite presente les differentes methodes d'obtention des couches necessaires aux dispositifs, epitaxie en phase liquide, epitaxie par jets moleculaires, depot en phase vapeur a partir d'organometalliques. Ces etudes ont permis d'affiner chacune des methodes et de definir dans chaque cas les conditions optimales de realisation. Enfin, nous avons analyse et compare les differents p

APA, Harvard, Vancouver, ISO, and other styles

47

Murphy, Helen Marie. "Quantum transport in superlattice and quantum dot structures." Thesis, University of Nottingham, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364637.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Bleuse, Joël. "Effets electro-optiques dans les superreseaux semiconducteurs." Paris 6, 1988. http://www.theses.fr/1988PA066088.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Fallahi, Mahmoud. "Intégration hétérogène d'un détecteur N-CdTe à un transistor à effet de champ GaAlAs/GaAs." Toulouse 3, 1988. http://www.theses.fr/1988TOU30188.

Full text

Abstract:

On realise sur un meme substrat gaas semi isolant des dispositifs comportant un photoconducteur interdigite cdte et un transistor fet gaalas/gaas pour montrer la faisabilite des circuits heterogenes. On developpe un modele de simulation pour concevoir les masques et analyser les caracteristiques du circuit. Pour realiser le transistor, on utilise la technique d'epitaxie en phase liquide. La croissance de la couche detectrice est obtenue par la methode de transport en phase vapeur a courte distance. On montre la compatibilite thermique et technologique de l'integration. Presentation, etude et c

APA, Harvard, Vancouver, ISO, and other styles

50

KUHN, OLIVIER. "Electroluminescence et transport bipolaire dans des heterostructures gaas/alas a effet tunnel resonnant." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10179.

Full text

Abstract:

Nous etudions les emetteurs optiques a base d'heterostructures bipolaires a effet tunnel resonnant. Les processus d'injection et d'echappement par effet tunnel resonnant, ainsi que les phenomenes d'accumulation et de redistribution de charges d'espace sont abordes. Un schema simple est etabli pour interpreter l'analyse des intensites d'electroluminescence comme une mesure selective du transport d'electrons et de trous. Les vallees satellites de la structure de bandes jouent un role important dans les proprietes electriques et optiques des heterostructures gaas/alas. Par des experiences sous pr

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!