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Dissertations / Theses on the topic 'Aluminum nitrite'

Author: Grafiati

Published: 4 June 2021

Last updated: 29 July 2025

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1

Panchula, Martin Lawrence. "Synthesis and sintering of nanocrystalline alumina and aluminum nitride." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/85366.

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2

Twait, Douglas J. "Codeposition of baron nitride plus aluminum nitride composites by chemical vapor deposition." Thesis, Georgia Institute of Technology, 1989. http://hdl.handle.net/1853/19581.

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3

Mushait, A.-N. "Electron spin resonance studies of doped alumina and aluminium nitride." Thesis, Durham University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381946.

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4

Du, Li. "Bulk crystal growth, characterization and thermodynamic analysis of aluminum nitride and related nitrides." Diss., Kansas State University, 2011. http://hdl.handle.net/2097/8625.

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Doctor of Philosophy<br>Department of Chemical Engineering<br>James H. Edgar<br>The sublimation recondensation crystal growth of aluminum nitride, titanium nitride, and yttrium nitride were explored experimentally and theoretically. Single crystals of these nitrides are potentially suitable as substrates for AlGaInN epitaxial layers, which are employed in ultraviolet optoelectronics including UV light-emitting diodes and laser diodes, and high power high frequency electronic device applications. A thermodynamic analysis was applied to the sublimation crystal growth of aluminum nitride to

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5

Moseley, Michael William. "Study of III-nitride growth kinetics by molecular-beam epitaxy." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47641.

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Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted an enormous amount of interest because of its properties and applications in both electronics and optoelectronics. Although blue light-emitting diodes have been commercialized based on this success, much less progress has been made in ultraviolet emitters, green emitters, and photovoltaics. This lack of development has been attributed to insufficient structural and electrical material quality, which is directly linked to the growth of

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6

Melnick, Joshua Robert. "Aluminum Nitride Countour Mode Resonators." Thesis, Rochester Institute of Technology, 2015. http://pqdtopen.proquest.com/#viewpdf?dispub=1591270.

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<p> Resonators are a major component in RF electronic products. They are used in a host of ways to filter radio signals. Modern and Future RF communications have placed high demands on the industry; requiring low power usage, wide array of applications and resistance to noise. </p><p> In this thesis, a discussion of the motivation for RF MEMS filters and basic theory is given with an explanation of the concepts of Q factor, piezoelectricity, acoustics theory, the major types of resonators (SAW, BAW, CMR or LAMB), apodization theory and techniques as well as design, simulation of CMR and BAW

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7

Li, Ting. "Gallium nitride and aluminum gallium nitride-based ultraviolet photodetectors /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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8

Khoshman, Jebreel M. "Spectroscopic ellipsometry charactarization of single and multilayer aluminum nitride / indium nitride thin film systems." Ohio : Ohio University, 2005. http://www.ohiolink.edu/etd/view.cgi?ohiou1129584189.

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9

Azeez, Qaisar A. "Synthesis of ultrafine aluminum nitride powders in a flow reactor." Ohio : Ohio University, 1988. http://www.ohiolink.edu/etd/view.cgi?ohiou1182779122.

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10

Borgonovo, Cecilia. "Synthesis of Aluminum-Aluminum Nitride Nanocomposites by Gas-Liquid Reactions." Digital WPI, 2013. https://digitalcommons.wpi.edu/etd-dissertations/224.

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An innovative method has been developed for synthesizing aluminum-aluminum nitride nanocomposite materials wherein the reinforcing nano-sized aluminum nitride particles are formed in-situ in a molten aluminum alloy. This method, which circumvents most issues associated with the traditional ways of making nanocomposites, involves reacting a nitrogen-bearing gas with a specially designed molten aluminum alloy. The method ensures excellent dispersion of the nanoparticles in the matrix alloy, which is reflected in enhanced mechanical properties. In this thesis, the author reviews the limitations o

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11

Shih, Andy. "Resonant tunneling in gallium nitride and aluminum nitride nanowire heterostructures." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=117124.

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III-V gallium nitride and aluminum nitride semiconductor nanowire heterostructures have emerged as promising candidates for numerous photonic device applications, ranging from the visible to the near-, mid- and far-infrared spectral range. In this work, the electrical properties of gallium nitride and aluminum nitride nanowire heterostructures were studied in the context of resonant tunneling. The negative differential resistance was observed in current-voltage measurements at room temperature and at 77 K for single nanowire devices as well as for large area devices, confirming the presence of

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12

Ho, Kwok-Lun. "Metalorganic chemical vapor deposition of aluminum nitride and gallium nitride." Thesis, Massachusetts Institute of Technology, 1991. http://hdl.handle.net/1721.1/13142.

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13

Martin, Nicolas. "Composite C/C à matrice nanochargée en alumine et en nitrure d'aluminium." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0237/document.

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Un procédé de synthèse de dépôts nanostructurés de céramiques à bases d’aluminium au sein de composites carbone/carbone (C/C) est développé. Il consiste à synthétiser à partir de précurseurs dissout en solution aqueuse des nano-particules de morphologies variées. La maîtrise du procédé se déroule en deux étapes. Dans un premier temps une étude sur substrat plan permet de saisir les points clés du procédé, puis l’adaptation de la synthèse au sein d’un échantillon massif permet le changement d’échelle à des échantillons fibreux. Quatre gammes d’éprouvettes de matériaux densifiés sont ainsi élabo

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14

Baik, Youngmin. "Carbothermal synthesis of aluminum nitride using sucrose." Thesis, McGill University, 1991. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=60643.

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In this work, the carbothermal reduction of Al$ sb2$O$ sb3$ to AlN was studied. Several kinds of aluminum oxides including $ alpha$-Al$ sb2$O$ sb3$, $ gamma$-Al$ sb2$O$ sb3$, $ theta$-Al$ sb2$O$ sb3$ and boehmite (AlOOH) were examined in order to observe the differences in reaction behaviour and powder characteristics obtained from each type of precursor. Cane sugar (sucrose) and carbon black were used as carbon sources. Reaction conditions studied were carbon to alumina ratio, temperature and reaction time. Sucrose resulted in a close-to-stoichiometric ratio of Al$ sb2$O$ sb3$:C (1:3.2) achie

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15

Santamaria, Hernandez Amilcar. "Aluminum Nitride Waveguides for Potential Soliton Propagation." University of Cincinnati / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1456848023.

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16

Sanchez, Mathon Gustavo. "Piezoelectric aluminum nitride thin films by PECVD." Limoges, 2009. https://aurore.unilim.fr/theses/nxfile/default/9224e391-3c48-4c10-9166-c2a2bed3c5f4/blobholder:0/2009LIMO4007.pdf.

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Des couches minces polycristallines d'AIN ont été réalisées en utilisant une technique CVD assistée par plasma micro-onde. Les paramètres, distance plasma - injecteur, température du substrat, polarisation RF du porte - substrat ont été optimisés. Il a été possible de contrôler l’orientation préférentielle <0001> ou <1010>, intéressantes pour des applications piézoélectriques. Les mécanismes de croissance qui ont conduit au développement des microstructures dans les différentes conditions ont été expliqués. La comparaison avec une technique PVD a permis d’enricher la discussion. Le

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17

Vacek, Petr. "Rozsáhlé defekty v nitridech Ga a Al." Doctoral thesis, Vysoké učení technické v Brně. CEITEC VUT, 2021. http://www.nusl.cz/ntk/nusl-447553.

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III-nitridy běžně krystalizují v hexagonální (wurtzitové) struktuře, zatímco kubická (sfaleritová) struktura je metastabilní a má pouze mírně vyšší energii. Jejich fyzikální vlastnosti jsou silně ovlivněny přítomností rozsáhlých defektů, které jsou v těchto dvou strukturách od sebe odlišné. U wurtzitových nitridů se jedná primárně o vláknové dislokace. Některé vláknové dislokace tvoří hluboké energetické stavy v zakázaném pásu, kterými ovlivňují elektrické a optoelektronické vlastnosti těchto materiálů. Oproti tomu, kubické nitridy obsahují množství vrstevných chyb, které představují lokální t

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18

Coiffard, Grégoire. "Détecteurs à inductance cinétique pour l'astronomie millimétrique : étude des matériaux et des procédés de fabrication." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAI077/document.

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Depuis 10 ans, les détecteurs à inductance cinétique (Kinetic Inductance Detector KID) ont connu un essor considérable dans le domaine de la radioastronomie millimétrique pour atteindre des limites de sensibilités de l'ordre du bruit de photon. Le détecteur à inductance cinétique est un résonateur, équivalent à un circuit RLC dont la fréquence de résonance est f_0, lithographié dans un métal supraconducteur. Des photons incidents, possédant une énergie plus grande que le gap supraconducteur, sont absorbés dans le matériau et modifient son impédance de surface résultant en un décalage Df_0 de l

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19

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t

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20

Papageorge, Marc Vasilios. "Characterization of metal/ceramic interfaces on aluminum nitride." Thesis, Georgia Institute of Technology, 1989. http://hdl.handle.net/1853/9352.

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21

Cheng, Chung-choi. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278577.

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22

Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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23

Iqbal, Abid. "The Sputtering and Characterization of C-Axis Oriented Aluminium Nitride Thin Films On Top Of Cubic Silicon Carbide-On-Silicon Substrates for Piezoelectric Applications." Thesis, Griffith University, 2017. http://hdl.handle.net/10072/365840.

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The growth of micro-scale wireless electronics is increasing significantly because of their miniaturisation and low power consumption. These devices currently draw power from batteries or chemical fuel cells. Their limited life-spans prompt active research to find an alternative solution by harvesting ambient energy from the environment. Numerous sources are available such as solar, thermoelectric, acoustic, and mechanical vibrations. Among them, mechanical vibration is perhaps the most practical to power these wireless electronic devices via piezoelectric transduction. Three most common piezo

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24

Taylor, Matthew Bruce, and matthew taylor@rmit edu au. "A Study of Aluminium Nitride and Titanium Vanadium Nitride Thin Films." RMIT University. Applied Science, 2007. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080529.151820.

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Thin film coatings are used to improve the properties of components and products in such diverse areas as tool coatings, wear resistant biological coatings, miniature integrated electronics, micro-mechanical systems and coatings for optical devices. This thesis focuses on understanding the development of intrinsic stress and microstructure in coatings of the technologically important materials of aluminium nitride (AlN) and titanium vanadium nitride (TiVN) deposited by filtered cathodic arc deposition. Thin films of AlN are fabricated under a variety of substrate bias regimes and at diffe

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25

Zhang, Jiansu. "Effect of equalisation time and temperatures on microstructures of simulated directly and conventionally charged V - microalloyed steels." Thesis, University of Strathclyde, 2003. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=21210.

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Two equalisation or reheating temperatures (1050°C and 1150°C) and three equalisation or reheating times (53 min, 318 min, and 1333 min) were applied to three V- and V-Ti- microalloyed steels, which contain a low carbon content (0.067 ~ 0.073 wt%) and high nitrogen content (0.017 ~ 0.021 wt%), by the simulated direct charging or conventional cold charging processes. The experimental results show that in directly charged V-microalloyed steels, MnS provides the main pinning effect but does not have a sufficient ability to prevent the austenite grains from growing during the equalisation. Because

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26

Knittel, Susan Means 1961. "Sintering of aluminum-nitride in a microwave induced plasma." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276877.

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The sintering of aluminum nitride in a microwave induced plasma was investigated. The plasma furnace consisted of a quartz tube inserted into a waveguide connected to a 2450 MHz microwave generator. After evacuating the tube to about 1.33 mbar, nitrogen gas was introduced, generating a steady plasma. Processing parameters such as gas pressure, power level, and time were optimized to yield maximum densification of aluminum nitride. Sintering of pure and doped AlN compacts was performed in the nitrogen plasma at temperatures up to 2000 S C. Undoped specimens reached densities of only 81% theoret

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27

Cheng, Chung-choi, and 鄭仲材. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278577.

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28

Xiao, Xiaoling, and S3060677@student rmit edu au. "Characterization of nano-structured coatings containing aluminium, aluminium-nitride and carbon." RMIT University. Applied Sciences, 2008. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20081217.100453.

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There is an every increasing need to develop more durable and higher performing coatings for use in a range of products including tools, devices and bio-implants. Nano-structured coatings either in the form of a nanocomposite or a multilayer is of considerable interest since they often exhibit outstanding properties. The objective of this thesis was to use advanced plasma synthesis methods to produce novel nano-structured coatings with enhanced properties. Coatings consisting of combinations of aluminum (Al), aluminum nitride (AlN) and amorphous carbon (a-C) were investigated. Cathodic vacuum

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29

Khoshman, Jebreel M. "Spectroscopic Ellipsometry Characterization of Single and Multilayer Aluminum Nitride/Indium Nitride Thin Film Systems." Ohio University / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1129584189.

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30

Boudjelida, Boumedienne. "Metal-aluminium gallium nitride Schottky contacts formation." Thesis, Sheffield Hallam University, 2006. http://shura.shu.ac.uk/19373/.

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X-ray photoelectron spectroscopy (XPS) has been used to investigate the effect of various surface cleaning procedures on Al[x]Ga[1]-[x]N surfaces for x = 0.20 and 0.30. Results show that wet chemical etch in a HF solution followed by a 600°C in-situ annealing under ultra-high vacuum (UHV) is very effective in removing oxygen from the surface. Downward band bending of 0.87 eV and 0.99 eV also occurs between the solvents-treated and the annealed Al[x]Ga[1]-[x]N surfaces for x = 0.20 and 0.30, respectively. Increasing in-situ temperature annealing in increments of 100°C up to 600°C shows a re-ord

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31

Jackson, Helen C. "Effect of variation of silicon nitride passivation layer on electron irradiated aluminum gallium nitride/gallium nitride HEMT structures." Thesis, Air Force Institute of Technology, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3629786.

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<p> Silicon nitride passivation on AlGaN\GaN heterojunction devices can improve performance by reducing electron traps at the surface. This research studies the effect of displacement damage caused by 1 MeV electron irradiation as a function of the variation of passivation layer thickness and heterostructure layer variation on AlGaN/GaN HEMTs. The effects of passivation layer thickness are investigated at thicknesses of 0, 20, 50 and 120 nanometers on AlGaN\GaN test structures with either an AlN nucleation layer or a GaN cap structures which are then measured before and immediately after 1.0 M

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32

Coudurier, Nicolas. "Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température." Phd thesis, Université de Grenoble, 2014. http://tel.archives-ouvertes.fr/tel-00994936.

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Cette thèse se place dans le contexte des recherches menées sur l'élaboration de support de haute qualité cristalline pour des applications optoélectronique et piézoélectrique. Les nitrures d'aluminium, AlN, et de bore, BN sont deux matériaux présentant des propriétés physiques intéressantes pour leurs utilisations en tant que substrat et partiellement comme couche active dans de telles applications. Les objectifs de cette thèse étaient de continuer les travaux en cours sur l'hétéroépitaxie d'AlN (avec le mélange H2 - NH3 - AlCl3 en phase gazeuse) sur substrat saphir et silicium, et d'explorer

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33

Dogan, Omer Nihat. "Interactions between austenite grain boundaries and aluminum nitride precipitates." Case Western Reserve University School of Graduate Studies / OhioLINK, 1990. http://rave.ohiolink.edu/etdc/view?acc_num=case1054927506.

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34

Newberg, Carl Edward 1962. "Materials research on metallized aluminum-nitride for microelectronic packaging." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276913.

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The use of aluminum nitride as a substrate material for microelectronics is examined. A brief look at thermal, mechanical, and electrical properties of aluminum nitride show that it is a viable alternative material for this use. A study of the interfaces between aluminum nitride and several thick film pastes (palladium silver conductor, ruthenium oxide resistor, and gold conductor) was performed with optical microscopy, scanning electron microscopy, and energy dispersive spectroscopy. Results of this investigation showed that the contaminants in the substrate material that affect thermal condu

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35

Masson, Isabelle. "Détermination des propriétés mécaniques en fluage a haute température et étude des microstructures de déformation de céramiques a base de nitrure d'aluminium." Vandoeuvre-les-Nancy, INPL, 1993. http://www.theses.fr/1993INPL136N.

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En vue d'applications en sidérurgie dans les nouveaux procédés de coulée continue de bandes minces, plusieurs céramiques à base de nitrure d'aluminium (AlN fritte (SAlN), AlN presse a chaud (HPAlN) et composites al#2o#3-AlN) ont été déformées en compression uniaxiale soit sous contrainte constante (150-250 MPa) soit à vitesse de déformation imposée (5. 10##6s##1) à des températures variant de 1200 à 1650c puis caractérisées en microscopie électronique à balayage, en microscopie électronique à transmission et par analyse EDX. En fluage a charge constante, la vitesse de déformation est proportio

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36

Moreira, Milena de Albuquerque 1977. "Synthesis of thin piezoelectric ALN films in view of sensors and telecom applications = Síntese de filmes finos de ALN piezoelétrico para aplicações em sensores e dispositivos de alta frequência." [s.n.], 2014. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260817.

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Orientador: Ioshiaki Doi<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação<br>Made available in DSpace on 2018-08-26T04:10:17Z (GMT). No. of bitstreams: 1 Moreira_MilenadeAlbuquerque_D.pdf: 14247893 bytes, checksum: d1c3fea8288827b46285a590dc311de4 (MD5) Previous issue date: 2014<br>Resumo: Os requisitos do mercado consumidor de dispositivos de alta frequência têm sido cada vez mais exigentes nas últimas décadas. Assim, é necessária uma melhoria contínua no desempenho dos dispositivos a fim de atender a estes requisitos. Numa visão macr

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37

Hoy, Daniel R. "Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661.

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38

Kaplan, Jefferson Coker. "Effect of UV irradiation on properties of hot pressed aluminum nitride." Thesis, Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/19480.

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39

Endres, Derek. "Numerical Investigation of pulsed chemical vapor deposition of aluminum nitride." Connect to resource, 2010. http://hdl.handle.net/1811/44821.

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40

Liu, Bei. "Growth of aluminum nitrade bulk crystals by sublimation /." Search for this dissertation online, 2004. http://wwwlib.umi.com/cr/ksu/main.

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41

Tucto, Salinas Karem Yoli. "Optical and luminiscent properties of terbium / ytterbium doped aluminum oxynitride and terbium doped aluminum nitride thin films." Doctoral thesis, Pontificia Universidad Católica del Perú, 2020. http://hdl.handle.net/20.500.12404/16766.

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In the present thesis the optical and light emission properties of two systems consisting of Tb3+ and Yb3+ doped amorphous AlOxNy thin ﬁlms and Tb3+ doped polycrystalline AlN thin ﬁlms were analyzed. In the two ions system, to obtain an adequate luminescent emission, commonly a signiﬁcant eﬀort must be made to ﬁnd a suitable concentration of dopants and elemental composition of the host material. An interesting and highly eﬃcient method is a combinatorial approach, allowing a high velocity screening of a wider range of properties. In the present work a combinatorial gradient based thin ﬁlm lib

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42

Kidder, John N. "Synthesis of aluminum nitride thin films at lower temperatures by metalorganic chemical vapor deposition /." Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/10572.

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43

Stevens, Lorin E. "Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor." DigitalCommons@USU, 2013. http://digitalcommons.usu.edu/etd/1506.

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Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researche

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44

Rebholz, Claus. "Synthesis and properties of titanium aluminium boron nitride coatings." Thesis, University of Hull, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310329.

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45

Norton, Murray Grant. "Characterisation and thick film metallisation of aluminium nitride substrates." Thesis, Imperial College London, 1989. http://hdl.handle.net/10044/1/47594.

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46

Ligl, Jana [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Aluminium scandium nitride grown by metalorganic chemical vapour deposition." Freiburg : Universität, 2020. http://d-nb.info/1225294118/34.

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47

Ghosh, Siddhartha. "Piezoelectric Acousto-Optical Modulation in Aluminum Nitride for Integrated RF-Photonics." Research Showcase @ CMU, 2015. http://repository.cmu.edu/dissertations/1122.

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Over the past several years, rapid advances in the field of integrated photonics coupled with nanofabrication capabilities have enabled studies of the interaction of light with the mechanics of a variety of physical structures. Concurrently, mechanical resonators have been extensively studied in the MEMS community due to their high quality factors, and have been implemented in a variety of RF filters and oscillators. The combination of MEMS with integrated optomechanical structures can generate a variety of novel devices that can be used for applications in RF-Photonics, timing and optical swi

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48

Chen, Yong-Xuan, and 陳詠璿. "Preparation and Characterization of Alumina Nitride Powders using Waste Aluminum Electrolytic Liquid." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/5d4asr.

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碩士<br>遠東科技大學<br>機械工程研究所<br>105<br>The alumina material used in this research is recycled from waste aluminum electrolyte liquid by chemical precipitation method to obtain boehmite, and them extract high purity γ-Al2O3 and α-Al2O3 micro powder my different temperature treatment as initial reaction material. In the research, AIN powder is synthetized by carbothermal reduction and nitridation, and how the two different sources of aluminum affect the synthesis. The result shows that when the reacting temperature is higher than 1,550℃ for over 5 hours, single and uniform particle size aluminum nitr

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BO-LIN, YEH, and 葉柏麟. "Investigation of Aluminum Nitride Sintering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/16896725814743157335.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>92<br>Aluminum nitride (AlN) is an attractive material because it has high thermal conductivity combined with good electrical insulation, excellent mechanical strength and low dielectric constant. These properties make AlN a leading candidate as a substrate for power circuits and multichip modules, and as a packaging materials for integrated circuits. In the work, three different aluminum nitride powders(Taiwan salt、Dow Chemical、Tokuyama) were added 2 wt% yttria, respectively. After mixing well, samples were placed in a graphite crucible and sintered in a

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CHANG, CHIEN-HUNG, and 張建宏. "Characteristic Analysis of Aluminum Gallium Nitride Filmswith Different Aluminum Contents." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/jzar95.

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碩士<br>東南科技大學<br>電機工程研究所<br>107<br>The aluminum gallium nitride film is an optoelectronic semiconductor material with high thermal stability and wide energy gap characteristics from 3.4 to 6.2 eV, so it can be applied to high power, high speed optoelectronic components; or applied to the wavelength of far ultraviolet to excite The light source in the blue to ultraviolet region is generated to form a light emitting diode. In order to further analyze the characteristics of aluminum gallium nitride film, this paper will measure the concentration of different aluminum in aluminum gallium nitride fi

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