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Dissertations / Theses on the topic 'Amorphous silicon (a-Si)'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

Réaux, David. "Cellules photovoltaïques à hétérojonctions de silicium (a-Si˸H/c-Si) : modélisation des défauts et de la recombinaison à l'interface." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS174/document.

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Les cellules à hétérojonctions de silicium (HET-Si) sont basées sur un substrat de silicium cristallin (c-Si) dopé n (p), une couche très fine de passivation (en général du silicium amorphe (a-Si:H) non dopé), et une couche d’une dizaine de nanomètres de silicium amorphe dopé p (n). Ces cellules atteignent aujourd’hui des rendements de l’ordre de 26% (record de 26,6% par l’entreprise Kaneka en 2017). Un des axes importants de recherche sur les cellules HET-Si porte sur l’étude de l’interface c-Si/a-Si:H qui est un élément clé dans le rendement des cellules. Ce rendement dépend en particulier d

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2

Chytyk-Praznik, Krista. "Dosimetric verification of radiation therapy including intensity modulated treatments, using an amorphous-silicon electronic portal imaging device." American Institute of Physics Publishing, 2006. http://hdl.handle.net/1993/5287.

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Radiation therapy is continuously increasing in complexity due to technological innovation in delivery techniques, necessitating thorough dosimetric verification. Comparing accurately predicted portal dose images to measured images obtained during patient treatment can determine if a particular treatment was delivered correctly. The goal of this thesis was to create a method to predict portal dose images that was versatile and accurate enough to use in a clinical setting. All measured images in this work were obtained with an amorphous silicon electronic portal imaging device (a-Si EPID), but

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3

Martin, de Nicolas Silvia. "a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112253/document.

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Parmi les technologies photovoltaïques à base de silicium, les cellules solaires à hétérojonction a-Si:H/c-Si (HJ) ont montré une attention croissante en ce qui concerne leur fort potentiel d’amélioration du rendement et de la réduction de coûts. Dans cette thèse, des investigations sur les cellules solaires à hétérojonction a-Si:H/c-Si de type (n) développées à l'Institut National de l'Énergie Solaire sont présentées. Les aspects technologiques et physiques du dispositif à HJ ont été revus, en mettant l'accent sur la compréhension du rôle joué par la face arrière. À travers le développement e

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4

Pehlivan, Ozlem. "Growth And Morphological Characterization Of Intrinsic Hydrogenated Amorphous Silicon Thin Film For A-si:h/c-si Heterojunction Solar Cells." Phd thesis, METU, 2013. http://etd.lib.metu.edu.tr/upload/12615488/index.pdf.

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Passivation of the crystalline silicon (c-Si) wafer surface and decreasing the number of interface defects are basic requirements for development of high efficiency a-Si:H/c-Si heterojunction solar cells. Surface passivation is generally achieved by development of detailed silicon wafer cleaning processes and the optimization of PECVD parameters for the deposition of intrinsic hydrogenated amorphous silicon layer. a-Si:H layers are grown in UHV-PECVD system. Solar cells were deposited on the p type Cz-silicon substrates in the structure of Al front contact/a-Si:H(n)/a-Si:H(i)/c-Si(p)/Al back

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5

Favre, Wilfried. "Silicium de type n pour cellules à hétérojonctions : caractérisations et modélisations." Phd thesis, Université Paris Sud - Paris XI, 2011. http://tel.archives-ouvertes.fr/tel-00635222.

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Les cellules à hétérojonctions de silicium fabriquées par croissance de couches minces de silicium amorphe hydrogéné (a-Si :H) à basse température sur des substrats de silicium cristallin (c-Si) peuvent atteindre des rendements de conversion photovoltaïque élevés (η=23 % démontré). Les efforts de recherche ayant principalement été orientés vers le cristallin de type p jusqu'à présent en France, ce travail s'attache à l'étude du type n pour d'une part déterminer les performances auxquelles s'attendre avec cette nouvelle filière et d'autre part les améliorer. Pour cela, nous avons mis en œuvre d

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6

Larbi, Fadila. "Traitement de couches minces et de dispositifs à base de a-Si : H par un plasma d'hydrogène : Etude in situ par ellipsométrie spectroscopique." Thesis, Reims, 2014. http://www.theses.fr/2014REIMS010/document.

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Ce travail est une contribution à l'étude de l'interaction entre des couches minces de silicium amorphe hydrogéné (a-Si:H) et un plasma d'hydrogène, dans un réacteur de dépôt par PECVD (Plasma Enhanced Chemical Vapor Deposition). Le suivi in situ de la cinétique de gravure par l'hydrogène atomique est réalisé par ellipsométrie UV-visble. Les différents paramètres de plasma (température, puissance radiofréquence, pression du gaz H2, type de dopage du matériau) pouvant impacter cette cinétique ont été sondés. L'analyse des spectres d'ellipsométrie spectroscopique, à l'aide d'un modèle optique ap

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7

Pepenene, Refuoe Donald. "Macroscopic and Microscopic surface features of Hydrogenated silicon thin films." University of the Western Cape, 2018. http://hdl.handle.net/11394/6414.

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Magister Scientiae - MSc (Physics)<br>An increasing energy demand and growing environmental concerns regarding the use of fossil fuels in South Africa has led to the challenge to explore cheap, alternative sources of energy. The generation of electricity from Photovoltaic (PV) devices such as solar cells is currently seen as a viable alternative source of clean energy. As such, crystalline, amorphous and nanocrystalline silicon thin films are expected to play increasingly important roles as economically viable materials for PV development. Despite the growing interest shown in these materials,

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8

Nobis, Frank. "Charakterisierung von a-Si:H/c-Si-Heterokontakten und dünnen Schichten aus hydrogenisiertem amorphem Silizium, hergestellt mittels gepulstem DC-Magnetronsputtern." Doctoral thesis, Universitätsbibliothek Chemnitz, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-127840.

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Dünne Schichten aus hydrogenisiertem amorphem Silizium a-Si:H spielen für die Photovoltaik eine wichtige Rolle. Einerseits kommt für die Dünnschicht-Photovoltaik unterschiedlich dotiertes a-Si:H in den Schichten einer p-i-n-Solarzelle zur Anwendung, andererseits stellen Heterokontakt-Solarzellen aus amorphem und kristallinem Silizium (a-Si:H/c-Si) wegen ihres hohen Wirkungsgrades derzeit ein sehr aktuelles Forschungsthema dar. Die Abscheidung der a-Si:H-Schichten im Rahmen dieser Arbeit erfolgt mit der Methode des Magnetronsputterns (Kathodenzerstäubung). Dieses für die in-line-Beschic

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9

Quiroga, Jean-Manuel. "Étude des propriétés optiques de multicouches a-Si:H/a-SiO2." Grenoble 1, 1998. http://www.theses.fr/1998GRE10124.

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L'etude porte sur les proprietes optiques de puits nanometriques multiples a-si:h/a-sio#2 elabores par pecvd (he+sih#4+o#2). Les caracteristiques des materiaux de reference sont determinees par diverses techniques de spectroscopie optique. Nous montrons la necessite de simuler les spectres en tenant compte des reflexions multiples afin d'eviter des erreurs importantes sur la valeur du coefficient d'absorption. Des mesures in situ de la teneur en oxygene dans le plasma nous ont permis de determiner une procedure de depot des multicouches reduisant la largeur des interfaces. La modulation de la

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10

AKA, BOKO. "Photodecomposition sensibilisee au mercure du monosilane (hg-photo-cvd) : application au depot en couches minces de silicium amorphe hydrogene (a-si : h)." Université Louis Pasteur (Strasbourg) (1971-2008), 1989. http://www.theses.fr/1989STR13026.

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L'etude fondamentale des parametres mis en jeu montre que la limitation de la quantite de cilane decompose et la formation importante d'hydrogene doivent etre associees a un mecanisme chimique en phase gazeuse et a la surface plutot qu'a la diminution de la transparence de la fenetre d'entree consecutive au depot du film si. Il est ainsi mis en evidence que la quantite relative de si depose est tres importante aux basses pressions et que la vitesse de depot peut etre accrue en operant a forte intensite lumineuse. La qualite des couches depend fortement des conditions de preparation, en particu

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11

Wu, Chien-Han, and 吳建翰. "Development of OPAMP and its Applications in Amorphous-Silicon (a-Si) TFT Technologies." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/81166388760660914999.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>97<br>With the advances in the fabrication technology, the liquid-crystal display (LCD) with amorphous-silicon (a-Si) active-matrix thin-film transistors (TFTs) is the most popular one due to its unparallel advantages in fabrication cost and productivity. In order to provide the control and driving signals for the display, a CMOS chipset is generally required. Recently, the concept of a system on glass (SOG) has been proposed. As the peripheral circuits are integrated with the pixel array on the same glass substrate, a compact system with low cost and high reliabili

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12

Tarn, Yi-Chuan, and 譚亦荃. "Design and Implementation of Analog Integrated Circuits in Amorphous-Silicon (a-Si) TFT Technologies." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/63933107911142674926.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>97<br>Conventionally, the amorphous-silicon (a-Si) thin-film-transistor (TFT) technology is primarily employed to realize the display panel excluding the driving circuits of LCDs. Recently, the concept of the system on glass (SOG) is introduced, and some analog circuits are integrated on the glass substrate. In this thesis, to demonstration the potential of the a-Si process for analog integrated circuits (ICs), novel design strategies are proposed to alleviate the intrinsic limitations imposed on this semiconductor. In Chapter 3, a novel operational amplifier (OPAMP

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13

Huang, Shao-Chang, and 黃紹璋. "A study of Amorphous Silicon Germanium High Speed IR Photodetector fabricated on crystal Si Substrate." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/70649342380411960816.

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碩士<br>國立成功大學<br>電機工程研究所<br>84<br>In this thesis , the amorphous silicon-germanium / crystal silicon heterojunction high-speed IR photodetector was studied in detail. In preparing the samples , the amorphous silicon- germanium alloys were grown on the crystal silicon subtrate by plasma enhanced chemical vapor deposition (PECVD). Both advantages of the low resistivity and high mobility characteristics of crystal silicon and the low temperature preparation processing,high

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14

"I. Viscosity of easy glass formers and the principle of corresponding states. II. Calorimetric studies of a-Si thin film." Chinese University of Hong Kong, 1992. http://library.cuhk.edu.hk/record=b5887024.

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by Tsang Kin Hung.<br>Title also in Chinese.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 1992.<br>Includes bibliographical references.<br>Table of Contents<br>Acknowledgements<br>Abstract<br>Part I --- p.1<br>Chapter Chapter 1 --- Introduction --- p.2<br>Chapter Chapter 2 --- Viscosity of molten P40Ni40P20 --- p.6<br>Chapter Chapter 3 --- Viscosity of molten Pd77Cu6.5Si16.5 and the principle of corresponding state --- p.26<br>Chapter Chapter 4 --- Viscosity of molten Pd82Si18 and the scaling of viscosities of glass forming systems --- p.40<br>Part II --- p.53<br>Chapter Chapter

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15

Chow, Melissa Jane. "Impact of Mechanical Stress on the Electrical Stability of Flexible a-Si TFTs." Thesis, 2011. http://hdl.handle.net/10012/6387.

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The development of functional flexible electronics is essential to enable applications such as conformal medical imagers, wearable health monitoring systems, and flexible light-weight displays. Intensive research on thin-film transistors (TFTs) is being conducted with the goal of producing high-performance devices for improved backplane electronics. However, there are many challenges regarding the performance of devices fabricated at low temperatures that are compatible with flexible plastic substrates. Prior work has reported on the change in TFT characteristics due to mechanical strain, with

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16

Yeke, Yazdandoost Mohammad. "Photon Quantum Noise Limited Pixel and Array architectures in a-Si Technology for Large Area Digital Imaging Applications." Thesis, 2011. http://hdl.handle.net/10012/6220.

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A Voltage Controlled Oscillator (VCO) based pixel and array architecture is reported using amorphous silicon (a-Si) technology for large area digital imaging applications. The objectives of this research are to (a) demonstrate photon quantum noise limited pixel operation of less than 30 input referred noise electrons, (b) theoretically explore the use of the proposed VCO pixel architecture for photon quantum noise limited large area imaging applications, more specifically protein crystallography using a-Si, (c) to implement and demonstrate experimentally a quantum noise limited (VCO) pixel, a

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17

Samanta, Arup. "Nano-Crystalline Silicon and Quantum Dots in SiOx Matrix: Synthesis by RF Plasma CVD and Characterization for Device Applications." Thesis, 2019. http://hdl.handle.net/10821/8327.

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The aim of this thesis is to deal with one of the important technological issues related to silicon based technology and synthesis of silicon based nanostructures by a new approach feasible for device applications. Use of noble gases like, Ar, He, Xe, etc., are generally utilized to increase the deposition rate of silicon thin films in RF plasma CVD. However, high Ar dilution leads to columnar growth and produces mostly defective network, while Xe dilution maintains an amorphous nature of the network even at a very high RF power to the plasma. Using He as the diluent to the plasma, the recent

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18

Τσόλκας, Γεώργιος. "Ετήσια ενεργειακή απόδοση πλαισίων λεπτού φιλμ και ισοδύναμη μοντελοποίηση". Thesis, 2011. http://nemertes.lis.upatras.gr/jspui/handle/10889/4392.

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Σκοπός αυτής της διπλωματικής εργασίας είναι να εμβαθύνουμε στη λειτουργία των φωτοβολταϊκών πλαισίων λεπτού φίλμ (και συγκεκριμένα των πλαισίων άμορφου πυριτίου - a-Si - και CIS) και μέσα από τα αριθμητικά δεδομένα, να αποφανθούμε πώς η λειτουργία σε πραγματικές συνθήκες μπορεί να επηρεάσει την παραγόμενη ισχύ τους. Στα πλαίσια αυτά, πραγματοποιήθηκαν πειραματικές μετρήσεις, στο χώρο της ταράτσας του κτιρίου του τμήματος των Ηλεκτρολόγων Μηχανικών και Τεχνολογίας Υπολογιστών, με φωτοβολταϊκά πλαίσια άμορφου πυριτίου και CIS ισχύος αιχμής 32 και 75 W αντίστοιχα. Οι μετρήσεις πραγματοποι

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