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Journal articles on the topic 'Amorphous silicon (a-Si)'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

FU, GUANG-SHENG, YAN-BIN YANG, WEI YU, WAN-BING LU, WEN-GE DING, and LI HAN. "AMORPHOUS SILICON NANO-PARTICLES IN A-SiNx:H PREPARED BY HELICON WAVE PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION." International Journal of Modern Physics B 19, no. 15n17 (2005): 2704–9. http://dx.doi.org/10.1142/s0217979205031560.

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Amorphous silicon nano-particles embedded in hydrogenated amorphous silicon nitride ( a - SiN x: H ) matrix have been prepared using an approach based on the deposition of Si -rich a - SiN x: H thin films by helicon wave plasma-enhanced chemical vapour deposition (HWP-CVD) technique, which has a characteristic of high plasma density at low working pressure. X-ray photoelectron spectroscopy analysis shows that the silicon atom bonds exist in the Si-Si and Si-N configurations and the amorphous silicon regions appear separately in the Si -rich a - SiN x: H films. The existence of amorphous silico

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2

Pamungkas, Mauludi Ariesto, and Rendra Widiyatmoko. "Effect of Hydrogenation Temperature on Distribution of Hydrogen Atoms in c-Si and a-Si: Molecular Dynamic Simulations." Key Engineering Materials 706 (August 2016): 55–59. http://dx.doi.org/10.4028/www.scientific.net/kem.706.55.

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Crystalline silicon and amorphous silicon are main materials of solar cell. Under prolonged exposure to light, silicon will degrade in quality. Hydrogenation is believed can minimize this degradation by reduce the number of dangling bond. These Molecular dynamics simulations are aimed to elaborate the hydrogenation process of crystalline silicon and amorphous silicon and to elucidate effect of temperature on distribution of hydrogen atoms. Reactive Force Field is selected owing to its capability to describe forming and breaking of atomic bonds as well as charge transfer. Hydrogenation is perfo

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3

Rath, Chandana, J. Farjas, P. Roura, F. Kail, P. Roca i Cabarrocas, and E. Bertran. "Thermally Induced Structural Transformations on Polymorphous Silicon." Journal of Materials Research 20, no. 9 (2005): 2562–67. http://dx.doi.org/10.1557/jmr.2005.0322.

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Polymorphous Si is a nanostructured form of hydrogenated amorphous Si that contains a small fraction of Si nanocrystals or clusters. Its thermally induced transformations such as relaxation, dehydrogenation, and crystallization have been studied by calorimetry and evolved gas analysis as a complementary technique. The observed behavior has been compared to that of conventional hydrogenated amorphous Si and amorphous Si nanoparticles. In the temperature range of our experiments (650–700 °C), crystallization takes place at almost the same temperature in polymorphous and in amorphous Si. In contr

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4

Kavindra, Kandpal, and Gupta Navneet. "Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends." Bulletin of Electrical Engineering and Informatics 5, no. 2 (2016): 205–12. https://doi.org/10.11591/eei.v5i2.530.

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This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a – Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters. Effect of high – dielectrics, grain boundaries, trap densities, and threshold voltage

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5

Follstaedt, D. M., J. A. Knapp, and S. M. Myers. "Mechanical properties of ion-implanted amorphous silicon." Journal of Materials Research 19, no. 1 (2004): 338–46. http://dx.doi.org/10.1557/jmr.2004.19.1.338.

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We used nanoindentation coupled with finite element modeling to determine the mechanical properties of amorphous Si layers formed by self-ion implantation of crystalline Si at approximately 100 K. When the effects of the harder substrate on the response of the layers to indentation were accounted for, the amorphous phase was found to have a Young’s modulus of 136 ± 9 GPa and a hardness of 10.9 ± 0.9 GPa, which were 19% and 10% lower than the corresponding values for crystalline Si. The hardness agrees well with the pressure known to induce a phase transition in amorphous Si to the denser β–Sn-

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6

Ech-chamikh, E., A. Essafti, M. Azizan, F. Debbagh, and Y. Ijdiyaou. "Annealing Effects on RF Sputter Deposited a-Si/a-C Multilayers." Journal of Nano Research 4 (January 2009): 103–6. http://dx.doi.org/10.4028/www.scientific.net/jnanor.4.103.

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Amorphous silicon on amorphous carbon (a-Si/a-C) multilayers was deposited by RadioFrequency (RF) sputtering. These multilayers were obtained by alternate deposition of a-C and a-Si layers, respectively from graphite and silicon targets of high purity, on crystalline silicon substrates. The RF power and the argon pressure, during the pulverization, were maintained respectively at 250W and 10-2 mbar. The annealing effects, at temperatures of 450°C and 750°C, on the deposited structures were investigated by X-ray reflectometry. The a-Si/a-C interfaces are abrupt before and after annealing at 450

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7

Perný, Milan, Vladimír Šály, František Janíček, Miroslav Mikolášek, Michal Váry, and Jozef Huran. "Electric measurements of PV heterojunction structures a-SiC/c-Si." Journal of Electrical Engineering 69, no. 1 (2018): 52–57. http://dx.doi.org/10.1515/jee-2018-0007.

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Abstract Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out

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8

Ferrara, M. A., I. Rendina, S. N. Basu, L. Dal Negro, and L. Sirleto. "Raman Amplifier Based on Amorphous Silicon Nanoparticles." International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/254946.

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The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.

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9

Catalano, M., M. J. Kim, R. W. Carpenter, Das K. Chowdhury, and Joe Wong. "The composition and structure of SIPOS: A high spatial resolution electron microscopy study." Journal of Materials Research 8, no. 11 (1993): 2893–901. http://dx.doi.org/10.1557/jmr.1993.2893.

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The nanostructure and chemical distribution in semi-insulating polycrystalline oxygen-doped silicon (SIPOS) deposited on (001) Si and its isothermal transformation behavior at 900 °C were investigated by high resolution electron microscopy (HREM) and electron energy loss nanospectroscopy (EELS). The structure of the as-deposited film, which contained 15 at. % oxygen, was amorphous. No evidence for nanocrystalline second phases was found. It was similar in appearance to amorphous silicon. After annealing for 30 min at 900 °C in an inert environment (N2), a dispersion of small nanocrystals, iden

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10

Pietruszko, Stanisław M., and Marek Kostana. "Metastability problems in amorphous silicon." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2001): 76–79. http://dx.doi.org/10.26636/jtit.2001.1.36.

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The results of study of the in uence of boron and phosphorous doping and hydrogen content on transport prop- erties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies on the effect of thermally induced metastability in LPCVD a-Si as a function of implanted boron and phosphorous concentration. We have investigated films unhydrogenated and hydrogenated by ion imp

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11

Hernandez, George A., Daniel Martinez, Stephen Patenaude, and Michael C. Hamilton. "Nanostructured Amorphous Silicon on Metal Electrodes: Electrical and Optical Properties." MRS Proceedings 1551 (2013): 61–66. http://dx.doi.org/10.1557/opl.2013.897.

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ABSTRACTWe present two distinct methods to nanostructure the surface of amorphous silicon to produce unique, nanoscale surface features. One method is a dry etch process that employs a modified Bosch1 process on an advanced silicon etcher to produce needle-like features of amorphous silicon. Likewise, we also investigated metal-assisted wet chemical etching2 as an alternative method to nanostructure the amorphous silicon to produce porous-like features. The resulting surface topography leads to an optically black appearance over patterned or large areas. This is a result of the interspacing be

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12

Hafdi, Zoubeida. "Electrical and Optical Characterization of Non-Hydrogenated a-Si/c-Si Heterojunction Solar Cells." Journal of Renewable Energies 24, no. 2 (2021): 202–13. http://dx.doi.org/10.54966/jreen.v24i2.981.

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This work deals with the performance of a heterojunction with intrinsic thin layer solar cell by sputtering silicon on p-type crystalline silicon substrate in argon ambient without hydrogen addition. This first effort was an attempt to use cost-effective means to convert light into electricity and to find fabrication processes which use fewer and cheaper materials for the fabrication of solar cells. Since transport mechanisms of amorphous silicon/crystalline silicon heterojunctions are still under investigation, the aim is to examine the behavior of the fabricated samples under electrical and

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13

JANG, JIN, and SOO YOUNG YOON. "METAL INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON." International Journal of High Speed Electronics and Systems 10, no. 01 (2000): 13–23. http://dx.doi.org/10.1142/s0129156400000052.

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Metal induced crystallization of amorphous silicon (a-Si) has been studied for a thin Ni layer on the a-Si. The NiSi2 precipitates, nuclei for the crystallization, can be formed at less than 400°C on the a-Si. The growth of the needlelike crystallites, as a result of the migration of NiSi2 precipitates through a-Si, proceeds to <111> directions with <110> normal to the film surface. The crystallization velocity of a-Si is greatly enhanced and thus the crystallization temperature is lowered by applying an electric field to the a-Si. High-quality polycrystalline silicon having needle

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14

K Lam, Lawrence, Nan Jiang, Dieter G Ast, and John Silcox. "TEM Study of Amorphous Silicon Recrystallization." Microscopy and Microanalysis 5, S2 (1999): 754–55. http://dx.doi.org/10.1017/s1431927600017098.

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Recently there has been increasing interest in nickel induced lateral recrystallization of amorphous silicon because of its potential to improve device performance and to lower the thermal budget during processing. The hypothesis is that the formation of nickel silicide provides a low energy nucleus for the recrystallization of amorphous silicon. The silicide, moving into a-Si, leaves crystalline silicon behind.1 The grains formed, therefore, tend to elongated. In this paper, we attempt to use TEM to investigate in detail the nickel assisted lateral crystallization of amorphous silicon. The sa

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15

Zhang, Jian Xin, Jun Xing Liu, You Bao Wan, and Ying Hui Sun. "A New Structure of Tandem Solar Cell with Amorphous Silicon and Polysilicon." Advanced Materials Research 512-515 (May 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.66.

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A new structure of a-Si/ poly-Si tandem solar cell has been desiged and prepared. Amorphous silicon has been use as photovoltaic material of bottom cell. And polysilicon has been used as photovoltaic material of bottom cell.The combination of amorphous silicon and polysilicon extends the light range which can be used by solar cell. This structure improves the efficiency of solar cell greatly.

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16

Cho, An‐Thung, Feng‐yun Yang, Young Zhang, et al. "26‐1: Embedded a‐Si Photo‐Transistor Sensors Integration in Remote Optical Touch‐input Panel Using Four‐Mask Process Architecture Technology." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 321–24. http://dx.doi.org/10.1002/sdtp.17520.

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An optical type touch‐input flat panel is designed. The driving system is based on the passive pixel sensor (PPS) array with amorphous silicon (a‐Si) TFT technology. The embedded sensing structure of the optical sensor is using the a‐Si TFT phototransistor and four‐mask process architecture technology. This paper presents a primary optical pixel sensor circuit that utilizes hydrogenated amorphous silicon photo‐transistor sensor. The a‐Si TFT phototransistor sensor is high reliability by using Multi‐N+ layer in the a‐Si TFT structure.

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17

Batstone, J. L. "In situ crystallization of amorphous silicon." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1346–47. http://dx.doi.org/10.1017/s042482010013136x.

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The solid state transformation of amorphous silicon (a-Si) to crystalline silicon (c-Si) is a first order phase transformation which is driven by the difference in free energy between the amorphous and crystalline phases. The crystallization occurs at temperatures of 500-700°C which are readily accessible with commercial specimen heating stages for the transmission electron microscope (TEM). In this paper we study the a-c phase transformation dynamically by utilizing the powerful technique of in-situ TEM to monitor the nucleation and growth kinetics of thin films of Si. The propagation of a mo

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18

Lockwood, D. J., G. C. Aers, L. B. Allard, et al. "Optical properties of porous silicon." Canadian Journal of Physics 70, no. 10-11 (1992): 1184–93. http://dx.doi.org/10.1139/p92-191.

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The optical and structural properties of porous Si films produced by electrochemical and chemical dissolution of Si have been studied by a variety of techniques. Raman scattering and transmission electron microscopy have shown the samples to contain crystalline Si wires and (or) spherites 3–8 nm in diameter and (or) amorphous Si. The optical absorption spectra and the wavelength, temperature, and lifetime dependence of the photoluminescence obtained from most of the samples are entirely consistent with the quantum confinement of excitons in Si nanostructures. Quite different photoluminescence

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19

Tai, Cheng-Hung, Chu-Hsuan Lin, Chih-Ming Wang, and Chun-Chieh Lin. "Three-Terminal Amorphous Silicon Solar Cells." International Journal of Photoenergy 2011 (2011): 1–5. http://dx.doi.org/10.1155/2011/813093.

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Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell wa

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20

Amirov I. I., Kupriyanov A. N., Izyumov M. O., and Mazaletsky L. S. "Obtaining a colored nanostructured layer of amorphous silicon by etching in chlorine-containing plasma." Technical Physics Letters 49, no. 4 (2023): 65. http://dx.doi.org/10.21883/tpl.2023.04.55882.19376.

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It is shown that in the self-forming mode in the plasma etching process of amorphous silicon structures (α-Si)/SiO2/Si and (α-Si)/Pt/SiO2/Si in chlorine-containing plasma (Cl2/Ar), it is possible to obtain a multicolored surface from nanoconus and nanowire structures of α-Si. The mechanism of formation of such structures during plasma chemical etching is discussed. The reflection spectra of colored films are given. The bright colors of the surface are caused by the resonant reflection of light in the layers of nanoconus and nanowire structures of α-Si with a sublayer of α-Si nanometer thicknes

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21

Mehta, S. C., D. A. Smith, M. R. Libera, J. Ott, G. Tompa, and E. Forsythe. "Nucleation and growth of Si quantum nanocrystals in silicon-rich oxide films." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 234–35. http://dx.doi.org/10.1017/s0424820100163630.

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The observation of photoluminescence and electroluminescence in Si nanocrystals has generated renewed interest in these novel silicon based materials for their possible application as light emitters and detectors. Silicon Rich Oxide (SRO) films with a uniform dispersion of silicon nanocrystallites in a wider bandgap SiO2 matrix manifest electroluminescence and photoluminescence in the infrared and visible portions of the spectrum. Understanding the nucleation and growth kinetics of these crystallites in amorphous matrix is of critical importance in the fabrication of future optoelectronic devi

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Mikolášek, Miroslav, Ján Jakaboviš, Vlastimil Řeháček, Ladislav Harmatha, and Robert Andok. "Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications." Journal of Electrical Engineering 65, no. 4 (2014): 254–58. http://dx.doi.org/10.2478/jee-2014-0039.

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Abstract In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the heterointerface properties of a passivated silicon heterojunction solar cell. It is shown that due to the high density of defect states in the amorphous layer the structure has to be analyzed as a heterojunction. Using the analysis, the following values have been determined: conduction-band offset of 0.13 eV, electron affinity of 3.92 eV, and density of defect states in the intrinsic amorphous silicon being that of 4.14 X 1021m—3.

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Georgiadis, Anna, Daniela Sauer, Ludger Herrmann, Jörn Breuer, Mehdi Zarei, and Karl Stahr. "Testing a new method for sequential silicon extraction on soils of a temperate–humid climate." Soil Research 52, no. 7 (2014): 645. http://dx.doi.org/10.1071/sr14016.

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The importance of silicon (Si) compounds in agriculture and geochemical cycles has received increasing attention over the last decade; however, quantitative data on non-crystalline pedogenic Si phases in soils are still rare. Recently, the authors developed a method for sequential Si extraction from soils, in order to improve the quantification of different Si compounds in soils. The method has been tested on samples of known composition. Here, the method is applied for the first time to complete soil profiles. Six different soil types from south-west Germany that have developed since the end

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Dang, Chien Mau, Tung Thanh Bui, Hung Thanh Le, et al. "Study on the deposition of amorphous silicon and ito thin films for heterojunction solar cell application." Science and Technology Development Journal 16, no. 1 (2013): 101–11. http://dx.doi.org/10.32508/stdj.v16i1.1425.

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In the heterojunction with intrinsic thin-layer (HIT) solar cell structure studied in this work, an intrinsic amorphous silicon (a-Si) layer followed by a n-type amorphous silicon was deposited on a p-type Czochralski (CZ) monocrystalline silicon (c-Si) wafer by plasma enhanced chemical vapor deposition (PECVD) method to form an heterojunction device. Then, indium tin oxide (ITO) layer was formed by DC magnetron sputtering as the top electrode and the anti-reflection coating layer. In order to obtain the high efficiency heterojunction structure, two important aspects were focused: improving th

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Володин, В. А., В. А. Гриценко та A. Chin. "Локальные колебания связей кремний-кремний в нитриде кремния". Письма в журнал технической физики 44, № 10 (2018): 37. http://dx.doi.org/10.21883/pjtf.2018.10.46097.17223.

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AbstractRaman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si_3N_4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si_3N_4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si_3N_4.

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Sinke, W. C., S. Roorda, and F. W. Saris. "Variable strain energy in amorphous silicon." Journal of Materials Research 3, no. 6 (1988): 1201–7. http://dx.doi.org/10.1557/jmr.1988.1201.

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Different Raman experiments on structural relaxation of a-Si and a-Ge are reviewed and discussed in relation to calorimetric measurements on a-Ge. On the basis of the correlation found between results from Raman spectroscopy and results from calorimetry in the case of a-Ge and of the strong similarity between a-Si and a-Ge in terms of their Raman spectra, it is suggested that the strain energy in a-Si may vary considerably with preparation conditions and subsequent treatments. Under this assumption the a-Si Gibbs free energy versus temperature has been constructed for material in different ini

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Schropp, Ruud E. I., Reinhard Carius, and Guy Beaucarne. "Amorphous Silicon, Microcrystalline Silicon, and Thin-Film Polycrystalline Silicon Solar Cells." MRS Bulletin 32, no. 3 (2007): 219–24. http://dx.doi.org/10.1557/mrs2007.25.

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AbstractThin-film solar cell technologies based on Si with a thickness of less than a few micrometers combine the low-cost potential of thin-film technologies with the advantages of Si as an abundantly available element in the earth's crust and a readily manufacturable material for photovoltaics (PVs). In recent years, several technologies have been developed that promise to take the performance of thin-film silicon PVs well beyond that of the currently established amorphous Si PV technology. Thin-film silicon, like no other thin-film material, is very effective in tandem and triple-junction s

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Merkulova, Irina. "Study of a-Si/Al thickness on aluminum-induced crystallization." E3S Web of Conferences 578 (2024): 01020. http://dx.doi.org/10.1051/e3sconf/202457801020.

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In this work, the effect of the a-Si/Al ratio on the poly-Si obtained as a result of aluminium-induced crystallization (AIC) of amorphous silicon a-Si at an annealing temperature of 490 °C has been studied. The dendritic shape of the resulting crystal structures suggests a growth model described by diffusion-limited aggregation. The degree of coverage is slightly dependent on the initial ratio of amorphous silicon to aluminium and ranges from 15% to 25%. This is probably explained by the higher rate of secondary crystallization in the upper layer compared to the lower layer. The maximum averag

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Kato, Shinya, Yasuyoshi Kurokawa, Kazuhiro Gotoh, and Tetsuo Soga. "Fabrication of a Silicon Nanowire Solar Cell on a Silicon-on-Insulator Substrate." Applied Sciences 9, no. 5 (2019): 818. http://dx.doi.org/10.3390/app9050818.

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This study proposes metal-assisted chemical etching (MAE) as a facile method to fabricate silicon nanowire (SiNW) array structures, with high optical confinement for thin crystalline silicon solar cells. Conventional SiNW arrays are generally fabricated on Si wafer substrates. However, tests on conventional SiNW-based solar cells cannot determine whether the photo-current is derived from SiNWs or from the Si wafer. Herein, SiNW arrays were fabricated on a silicon-on-insulator substrate with a 10-μm-thick silicon layer for measuring the photocurrent of the SiNW only. The 9 μm-long p-type SiNW a

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Rai, Dharmendra Kumar R., Dayanand S. Sutar, Chetan Singh Solanki, and K. R. Balasubramaniam. "Ultra Thin SiN_X on a-Si In Situ Hot-Wire CVD by Decomposing NH₃ Gas." Advanced Materials Research 894 (February 2014): 421–26. http://dx.doi.org/10.4028/www.scientific.net/amr.894.421.

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The fabrication of ultra thin silicon nitride (SiNX) layer (< 2 nm) on amorphous silicon (a-Si) in-situ hot-wire CVD by decomposing ammonia (NH3) gas is reported. Approximately 1.5 nm thin SiNXis formed by nitridation of 40 nm thick a-Si for 10 min at substrate temperature of 250 °C. The amorphous phase of SiNXformed on a-Si and a-Si layer deposited on c-Si wafer is identified by Raman spectroscopy. The formation of ultra thin SiNXby nitridation of a-Si at 250 °C is confirmed by X-ray photoelectron spectroscopy (XPS) depth profile measurement of SiNX/a-Si structured film. The report indicat

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CHEN, L. J., S. L. CHENG, H. H. LIN, and K. S. CHI. "CRYSTALLIZATION IN AMORPHOUS SILICON." International Journal of Modern Physics B 16, no. 01n02 (2002): 1–8. http://dx.doi.org/10.1142/s021797920200938x.

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High-resolution transmission electron microscopy (HRTEM) in conjunction with auto-correlation function (ACF) analysis has been applied to investigate the crystallization processes in amorphous silicon. For both electron beam evaporated and ion implanted amorphous silicon thin films, a high density of Si nanocrystallites was detected in as-deposited films. The density was found to diminish in amorphous films with annealing temperature first then increase. The conclusions are discussed in the context of free energy change with annealing temperature.

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Ma, Ying, and Colton Dechant. "A Computational Protocol for Generating Reliable Amorphous Silicon and Silicon Oxides Structures." ECS Meeting Abstracts MA2025-01, no. 3 (2025): 380. https://doi.org/10.1149/ma2025-013380mtgabs.

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Amorphous silicon and silicon oxides (SiO_x,0<x≤2) have emerged as promising anode materials for lithium-ion batteries, although a few critical problems exist. A fundamental understanding of the structure and properties of these amorphous materials is critical. Computationally, the simulated melt-quench method has been used to generate the amorphous structure, where the system is melted at high temperatures and then quickly quenched down. However, it is known that such generated structures depend on various artifacts such as system size and simulation history. In this work, amorphous Si and

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Wan, Julin, Matt J. Gasch, and Amiya K. Mukherjee. "Consolidation and crystallization of Si3N4/SiC nanocomposites from a poly(urea–silazane) ceramic precursor." Journal of Materials Research 16, no. 11 (2001): 3274–86. http://dx.doi.org/10.1557/jmr.2001.0451.

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Controlled pyrolysis of polymer ceramic precursors provides a new way of obtaining silicon nitride ceramics with high creep resistance. In this study, crack-free bulk amorphous Si–N–C materials were produced by warm-pressing followed by pyrolysis or alternatively by prepyrolysis and binding followed by pyrolysis. Amorphous compacts were then heat-treated at different temperatures to promote crystallization. High-resolution electron microscopy revealed that, at about 1650 °C, silicon nitride/silicon carbide nanocomposites with a high degree crystallinity can be achieved with grain sizes of abou

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Ponomarev, Ilia, and Peter Kroll. "29Si NMR Chemical Shifts in Crystalline and Amorphous Silicon Nitrides." Materials 11, no. 9 (2018): 1646. http://dx.doi.org/10.3390/ma11091646.

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We investigate 29Si nuclear magnetic resonance (NMR) chemical shifts, δiso, of silicon nitride. Our goal is to relate the local structure to the NMR signal and, thus, provide the means to extract more information from the experimental 29Si NMR spectra in this family of compounds. We apply structural modeling and the gauge-included projector augmented wave (GIPAW) method within density functional theory (DFT) calculations. Our models comprise known and hypothetical crystalline Si3N4, as well as amorphous Si3N4 structures. We find good agreement with available experimental 29Si NMR data for tetr

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Neimash, V. B., A. O. Goushcha, L. L. Fedorenko, et al. "Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon." Journal of Nanomaterials 2018 (2018): 1–11. http://dx.doi.org/10.1155/2018/1243685.

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This work describes tin-induced crystallization of amorphous silicon studied with Raman spectroscopy in thin-film structures Si-Sn-Si irradiated with pulsed laser light. We have found and analyzed dependencies of the nanocrystals’ size and concentration on the laser pulse intensity for 10 ns and 150 μm duration laser pulses at the wavelengths of 535 nm and 1070 nm. Efficient transformation of the amorphous silicon into a crystalline phase during the 10 ns time interval of the acting laser pulse in the 200 nm thickness films of the amorphous silicon was demonstrated. The results were analyzed t

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Zhang, Lin, Hong Wei Zhao, Zhi Chao Ma, Hu Huang, Chun Yang Geng, and Zhi Chao Ma. "A Study on Size Effect of Indenter in Nanoindentation via Molecular Dynamics Simulation." Key Engineering Materials 562-565 (July 2013): 802–8. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.802.

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A series of three-dimensional molecular dynamics (MD) simulations of nanoindentation are conducted to investigate the deformation behavior and phase transformation of monocrystalline silicon with different size hemispherical diamond indenters on (010) crystal plane. The technique of coordination number (CN) is employed to elucidate the detailed mechanism of phase transformation in the monocrystalline silicon. The simulation results show that the phase transformation varies according to the different radii indenters. In the phase transformation region beneath the indenter, the crystalline struc

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Pan, Hui, Zhenhua Ni, Cheekok Poh, Yuan Ping Feng, Jianyi Lin, and Zexiang Shen. "A Simple Route to Growth of Silicon Nanowires." Journal of Nanoscience and Nanotechnology 8, no. 11 (2008): 5787–90. http://dx.doi.org/10.1166/jnn.2008.18360.

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Silicon nanowires (SiNWs) have been produced by a simple thermal heating method with gold as a catalyst. The grown silicon nanowires were highly crystalline with little impurities such as amorphous Si and silicon oxides. Photoluminescence (PL) study has indicated that the Si band gap increases from 1.1 eV of bulk Si to 1.59 eV for the as-grown SiNWs due to quantum confinement effect. A strong PL peak around 540 nm (2.28 eV) is attributed to the relaxation of photon-induced self-trapped state in the form of surface Si–Si dimmers, while the blue light emission around 390 nm is attributed to the

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38

Andrade, Joseph A., Bryan E. Rachmilowitz, Brian C. Daly, et al. "Ultrafast Optical Measurements of Acoustic Phonon Attenuation in Amorphous and Nanocrystalline Silicon." MRS Proceedings 1536 (2013): 147–53. http://dx.doi.org/10.1557/opl.2013.909.

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ABSTRACTWe have measured the attenuation of longitudinal acoustic waves in a series of amorphous and nanocrystalline silicon films using picosecond ultrasonics. We determined the attenuation of amorphous Si to be lower than what is predicted by theories based on anharmonic interactions of the ultrasound wave with localized phonons or extended resonant modes. We determined the attenuation of nanocrystalline Si to be nearly one order of magnitude higher than amorphous Si.

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39

Shen, T. D., C. C. Koch, T. L. McCormick, R. J. Nemanich, J. Y. Huang, and J. G. Huang. "The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball milling." Journal of Materials Research 10, no. 1 (1995): 139–48. http://dx.doi.org/10.1557/jmr.1995.0139.

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The structural transformation of polycrystalline Si induced by high energy ball milling has been studied. The structure and property characteristics of the milled powder have been investigated by x-ray diffraction, scanning electron microscopy, high-resolution electron microscopy, differential scanning calorimetry, Raman scattering, and infrared absorption spectroscopy. Two phase amorphous and nanocrystalline Si has been produced by ball milling of polycrystalline elemental Si. The nanocrystalline components contain some defects such as dislocations, twins, and stacking faults which are typica

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Duan, Haojie, Hongqiang Xu, Qian Wu, et al. "Silicon/Graphite/Amorphous Carbon as Anode Materials for Lithium Secondary Batteries." Molecules 28, no. 2 (2023): 464. http://dx.doi.org/10.3390/molecules28020464.

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Although silicon is being researched as one of the most promising anode materials for future generation lithium-ion batteries owing to its greater theoretical capacity (3579 mAh g−1), its practical applicability is hampered by its worse rate properties and poor cycle performance. Herein, a silicon/graphite/amorphous carbon (Si/G/C) anode composite material has been successfully prepared by a facile spray-drying method followed by heating treatment, exhibiting excellent electrochemical performance compared with silicon/amorphous carbon (Si/C) in lithium-ion batteries. At 0.1 A g−1, the Si/G/C s

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Agbo, Solomon, Pavol Sutta, Pavel Calta, Rana Biswas, and Bicai Pan. "Crystallized silicon nanostructures — experimental characterization and atomistic simulations." Canadian Journal of Physics 92, no. 7/8 (2014): 783–88. http://dx.doi.org/10.1139/cjp-2013-0442.

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We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated am

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Daya, Sagar Dhungana, Bonaventura Eleonora, Martella Christian, Grazianetti Carlo, and Molle Alessandro. "Solid phase crystallization of amorphous silicon at the two-dimensional limit." December 6, 2022. https://doi.org/10.1039/D2NA00546H.

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The epitaxy of silicene-on-Ag(111) renewed considerable interest in silicon (Si) when scaled down to the two-dimensional (2D) limit. This remains one of the most explored growth cases in the emerging 2D material fashion beyond graphene. However, out of a strict silicene framework, other allotropic forms of Si still deserve attention owing to technological purposes. Here, we present 2D Solid Phase Crystallization (SPC) of Si starting from an amorphous-Si on Ag(111) in atomic coverage to gain a crystalline-Si layer by post-growth annealing below 450 °C, namely Complementary Metal Oxide Semic

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Fauchet, Philippe M., Leonid Tsybeskov, Margit Zacharias, and Karl Hirschman. "Nanocrystalline Silicon/Amorphous Silicon Dioxide Superlattices." MRS Proceedings 485 (1997). http://dx.doi.org/10.1557/proc-485-49.

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AbstractThin layers made of densely packed silicon nanocrystals sandwiched between amorphous silicon dioxide layers have been manufactured and characterized. An amorphous silicon/amorphous silicon dioxide superlattice is first grown by CVD or RF sputtering. The a-Si layers are recrystallized in a two-step procedure (nucleation + growth) to form layers of nearly identical nanocrystals whose diameter is given by the initial a-Si layer thickness. The recrystallization is monitored using a variety of techniques, including TEM, X-Ray, Raman, and luminescence spectroscopies. When the a-Si layer thic

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Palsule, C., U. Paschen, J. D. Cohen, J. Yang, and S. Guha. "Capacitance Characterization of Amorphous Silicon/Amorphous Silicon Germanium Heterostructures." MRS Proceedings 420 (1996). http://dx.doi.org/10.1557/proc-420-209.

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AbstractWe have performed voltage-pulse stimulated capacitance transient measurements along with other junction capacitance measurements on a-Si:H/ a-Si,Ge:H heterostructures deposited on p-type crystalline silicon using the glow discharge technique. For a filling pulse that puts the c-Si/a-Si:H junction in forward bias, the capacitance transients consist of two components- a fast component corresponding to electron emission and a slow component corresponding to hole emission. For a fixed starting reverse bias, we have found that the density of trapped holes is proportional to the product of t

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Rosa, R. De, M. L. Addonizio, E. Chiacchio, F. Roca, and M. Tucci. "Plasma Etching Conditioning of Textured Crystalline Silicon Surfaces for a-Si/c-Si Heterojunctions." MRS Proceedings 557 (1999). http://dx.doi.org/10.1557/proc-557-585.

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AbstractThe development of a hybrid heterojunction fabricated by growing ultrathin amorphous silicon by Plasma Enhanced Chemical Vapor Deposition using temperatures below 250°C offers the potential of obtaining high efficiency solar cells deposited on glassy substrates. The surface preparation represents one of the most critical steps. The first aim of etching is to remove the native oxide layer from the surface of the crystalline wafer, before amorphous layer deposition. The possibility of obtaining this goal with a dry procedure that reduces the exposure of the sample to the environment is n

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46

Symonsj, J., J. Nijs, J. Vanhellemontk та ін. "Heterojunction Bipolar Transistors (HBT) with a-Si:H or μc-Si Emitter". MRS Proceedings 95 (1987). http://dx.doi.org/10.1557/proc-95-621.

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AbstractIn this paper phosphorous doped amorphous and microcrystalline silicon are used as emitter material for npn bipolar transistors. A heterojunction is formed between emitter and base, resulting in a higher current gain β for the same base parameters in comparison with conventional transistors. Because the amorphous silicon results in a too high emitterresistance, a compromise solution is microcrystalline silicon (μc-Si). HREM-micrographs give credit to the true heterojunction concept and show epitaxial reorganization, especially after annealing of the amorphous silicon.

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47

Stolk, P. A., A. Polman, and W. C. Sinke. "Epitaxial Explosive Crystallization of Amorphous Silicon Layers Buried in a Silicon (100) and (111) Matrix." MRS Proceedings 147 (1989). http://dx.doi.org/10.1557/proc-147-179.

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Abstract420 nm thick amorphous Si layers buried in a Si (100) or Si (111) matrix, produced by 350 keV Si-implantation, were irradiated using a pulsed ruby laser. Time-resolved reflectivity measurements show that melting can be initiated buried in the samples at the crystalline-amorphous interface. Melting is immediately followed by explosive crystallization of the buried amorphous layer, which is started from the crystalline top layer. The velocity of this self-sustained crystallization process is determined to be 15.0 ± 0.5 m/s for Si (100) and 14.0 ± 0.5 m/s for Si (111). RBS and cross-secti

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48

Custer, J. S., Michael O. Thompson, D. C. Jacobson, et al. "Density Measurements of Ion Implanted Amorphous Silicon." MRS Proceedings 157 (1989). http://dx.doi.org/10.1557/proc-157-689.

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ABSTRACTThe density of amorphous Si was measured. Continuous and buried amorphous Si films were produced by 0.5-8 MeV Si implantation through a steel contact mask. Surface steps of amorphous Si stripes with initial thicknesses from 0.9 to ∼ 5.0 μm were measured using a surface profilometer. For implants up to 5 MeV, the amorphous Si is constrained laterally by the surrounding crystal and deforms plastically. The density of amorphous Si deduced from the surface step heights is 4.91 × 1022 cm-3, 1.7 ± 0.1 % less than the density of crystal Si (5.00 × 1022 cm-3).

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Sidhu, L. S., T. Kosteski, N. P. Kherani, F. Gaspari, S. Zukotynski, and W. Shmayda. "An Infrared and Luminescence Study of Tritiated Amorphous Silicon." MRS Proceedings 467 (1997). http://dx.doi.org/10.1557/proc-467-129.

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ABSTRACTTritium, has been incorporated into amorphous silicon. Infrared spectroscopy shows new infrared vibration modes due to silicon-tritium (Si-T) bonds in the amorphous silicon network. Si-T vibration frequencies are related to Si-H vibration frequencies by simple mass relationships. Inelastic collisions of β particles, produced as a result of tritium decay, with the amorphous silicon network results in the generation of electron-hob pairs. Radiative recombination of these carriers is observed. Dangling bonds associated with the tritium decay reduce luminescence efficiency.

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50

Rösch, M., T. Unold, R. Pointmayer, and G. H. Bauer. "Capacitance Spectroscopy of Defects in a-SI:H/c-SI Heterostructures." MRS Proceedings 557 (1999). http://dx.doi.org/10.1557/proc-557-463.

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AbstractWe investigate defects at the interface in heterodiodes of hydrogenated amorphous silicon and monocrystalline silicon by frequency and temperature dependent capacitance measurements. The interpretation of the experimental results is supported by numerical simulations of capacitance experiments via transient calculations of defect charging and decharging in the diodes. A defined variation of waver surface treatments prior to amorphous silicon deposition shows a clear correlation of interface defects determined by capacitance measurements with current-voltage characteristics.

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