Relevant bibliographies by topics / Anisotropic Etching

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  2. Dissertations / Theses
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Academic literature on the topic 'Anisotropic Etching'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Anisotropic Etching"

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Lamichhane, Shobha Kanta. "Experimental investigation on anisotropic surface properties of crystalline silicon." BIBECHANA 8 (January 15, 2012): 59–66. http://dx.doi.org/10.3126/bibechana.v8i0.4828.

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Anisotropic etching of silicon has been studied by wet potassium hydroxide (KOH) etchant with its variation of temperature and concentration. Results presented here are temperature dependent etch rate along the crystallographic orientations. The etching rate of the (111) surface family is of prime importance for microfabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of (111) remains unclear. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study demonstrate that the contribution of microscopic activation energy that effectively controls the etching process. Such a strong anisotropy in KOH allows us a precious control of lateral dimensions of the silicon microstructure.Keywords: microfabrication; activation energy; concentration; anisotropy; crystal planeDOI: http://dx.doi.org/10.3126/bibechana.v8i0.4828 BIBECHANA 8 (2012) 59-66
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Barycka, Irena, and Irena Zubel. "Silicon anisotropic etching in KOH-isopropanol etchant." Sensors and Actuators A: Physical 48, no. 3 (May 1995): 229–38. http://dx.doi.org/10.1016/0924-4247(95)00992-2.

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Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Simple Microcantilever Release Process of Silicon Piezoresistive Microcantilever Sensor Using Wet Etching." Applied Mechanics and Materials 660 (October 2014): 894–98. http://dx.doi.org/10.4028/www.scientific.net/amm.660.894.

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In this paper, a simple microcantilever release process using anisotropic wet etching is presented. The microcantilever release is conducted at the final stage of the fabrication of piezoresistive microcantilever sensor. Issues related to microcantilever release such as microscopic roughness and macroscopic roughness has been resolved using simple technique. By utilizing silicon oxide (SiO2) as the etch stop for the wet etching process, issues related to microscopic roughness can be eliminated. On the other hand, proper etching procedure with constant stirring of the etchant solution of KOH anisotropic etching significantly reduces the notching effect contributed by the macroscopic roughness. Upon the completion of microcantilever release, suspended microcantilever of 2μm thick is realized with the removal of SiO2layer using Buffered Oxide Etching (BOE).
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Naseh, S., L. M. Landsberger, M. Kahrizi, and M. Paranjape. "Experimental investigations of anisotropic etching of Si in tetramethyl ammonium hydroxide." Canadian Journal of Physics 74, S1 (December 1, 1996): 79–84. http://dx.doi.org/10.1139/p96-837.

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Anisotropic etching of silicon in tetramethyl ammonium hydroxide (TMAH) is receiving attention as a relatively nontoxic alternative anisotropic etchant for silicon (Si), for the fabrication of microelectromechanical systems, sensors, and actuators. This work presents experimental investigations on several aspects of anisotropic etching of Si in TMAH. The effects of temperature and concentration on etch rates of {100} and {110} wafers are characterized. Several previously unreported experimental findings aimed at better understanding the atomic level mechanisms are presented: underetch-rate variation with mask-edge deviation, an investigation of stirring, and a subtle effect of applied bending stress.
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Zubel, Irena. "Anisotropic etching of Si." Journal of Micromechanics and Microengineering 29, no. 9 (July 30, 2019): 093002. http://dx.doi.org/10.1088/1361-6439/ab2b8d.

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Syväjärvi, M., R. Yakimova, and E. Janzén. "Anisotropic Etching of SiC." Journal of The Electrochemical Society 147, no. 9 (2000): 3519. http://dx.doi.org/10.1149/1.1393930.

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Leancu, Ralu, N. Moldovan, L. Csepregi, and W. Lang. "Anisotropic etching of germanium." Sensors and Actuators A: Physical 46, no. 1-3 (January 1995): 35–37. http://dx.doi.org/10.1016/0924-4247(94)00856-d.

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Tellier, C. R., T. G. Leblois, and A. Charbonnieras. "Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH." Active and Passive Electronic Components 23, no. 1 (2000): 37–51. http://dx.doi.org/10.1155/apec.23.37.

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This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant on two dimensional and three dimensional etching shapes.
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Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Double-Step Plasma Etching for SiO2 Microcantilever Release." Advanced Materials Research 254 (May 2011): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.254.140.

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In this paper, an isotropic dry plasma etching was used to release the suspended SiO2 microcantilever from the substrate of SOI wafer. Employing the plasma dry etching technique, the frontside etching for the SiO2 microcantilever release is done using the Oxford Plasmalab System 100. To obtain the optimum condition for the microcantilever release using the plasma etcher, the etching parameters involved are 100 sccm of SF6 flow, 2000 W of capacitively coupled plasma (CCP) power, 3 W of inductively coupled plasma (ICP) power, 20°C of etching temperature and 30 mTorr chamber pressure. The optimum parameters yield lateral etch rate of about 5 μm/min and vertical etch rate of about 8 μm/min. Two etching methods have been considered in this study. The first method employs only the isotropic etching to realize the microcantilever release while the second method utilizes both the anisotropic etching and the isotropic etching. For the second method, the process starts with the anisotropic etching from the deep reactive ion etching (DRIE) system which is then followed by the isotropic etching to complete the microcantilever releasing process. The purpose of the anisotropic etching is to create an etching window for the subsequent isotropic etching process. By using double-step etching method which combines both isotropic and anisotropic plasma etching for the microcantilever release process, the releasing process of suspended microcantilever is significantly improved.
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Lim, Sung Jun, Wonjung Kim, Sunghan Jung, Jongcheol Seo, and Seung Koo Shin. "Anisotropic Etching of Semiconductor Nanocrystals." Chemistry of Materials 23, no. 22 (November 22, 2011): 5029–36. http://dx.doi.org/10.1021/cm202514a.

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Dissertations / Theses on the topic "Anisotropic Etching"

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Hobbs, Neil Townsend. "Anisotropic etching for silicon micromachining." Thesis, Virginia Tech, 1994. http://hdl.handle.net/10919/40632.

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Silicon micromachining is the collective name for several processes by which three dimensional structures may be constructed from or on silicon wafers. One of these processes is anisotropic etching, which utilizes etchants such as KOH and ethylene diamine pyrocatechol (EDP) to fabricate structures from the wafer bulk. This project is a study of the use of KOH to anisotropically etch (lOO)-oriented silicon wafers. The thesis provides a thorough review of the theory and principles of anisotropic etching as applied to (100) wafers, followed by a few examples which serve to illustrate the theory. Next, the thesis describes the development and experimental verification of a standardized procedure by which anisotropic etching may be reliably performed in a typical research laboratory environment. After the development of this procedure, several more etching experiments were performed to compare the effects of various modifications of the etching process. Multi-step etching processes were demonstrated, as well as simultaneous doublesided etching using two different masks. The advantages and limitations of both methods are addressed in this thesis. A comparison of experiments performed at different etchant temperatures indicates that high temperatures (800 C) produces reasonably good results at a very high etch rate, while lower temperatures (500 C) are more suited to high-precision structures since they produce smoother, higher-quality surfaces.
Master of Science

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Ashraf, Huma. "Anisotropic etching of silicon using SF6 plasmas." Thesis, Imperial College London, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.404383.

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Dixon, Elizabeth. "The chemical and electrochemical anisotropic etching of silicon." Thesis, University of Portsmouth, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310413.

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Franke, Andrea Elke. "Fabrication of extremely smooth nanostructures using anisotropic etching." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10459.

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Steiner, Pinckney Alston IV. "Anisotropic low-energy electron-enhanced etching of semiconductors in DC plasma." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/27060.

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Gosálvez, Miguel A., Yan Xing, Kazuo Sato, and 一雄 佐藤. "Analytical Solution of the Continuous Cellular Automaton for Anisotropic Etching." IEEE, 2008. http://hdl.handle.net/2237/11160.

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Cheng, D., M. A. Gosálvez, M. Shikida, and K. Sato. "A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions." IEEE, 2006. http://hdl.handle.net/2237/9537.

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Pal, P., K. Sato, M. A. Gosalvez, M. Shikida, and 一雄 佐藤. "An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask." IEEE, 2008. http://hdl.handle.net/2237/11137.

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Naseh, Sasan. "Experimental investigation of anisotropic etching of silicon in tetra-methyl ammonium hydroxide." Thesis, Connect to online version, 1995. http://0-wwwlib.umi.com.mercury.concordia.ca/cr/concordia/fullcit?pMQ90888.

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Dave, Neha H. (Neha Hemang). "Removal of metal oxide defects through improved semi-anisotropic wet etching process." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/78167.

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Thesis (M. Eng. in Manufacturing)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2012.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 52).
Data recently collected from an industrial thin film manufacturer indicate that almost 8% of devices are rejected due to excess metal, or unwanted metal on the device surface. Experimentation and analysis suggest that almost half of these defects are caused by incomplete removal of nickel oxides that form on top of the conductive nickel surface throughout the heated environment of the upstream process. This study classified and identified the composition of these excess metal defects, evaluated recommended wet etch methods to remove nickel oxide, and finally proposes a wet etch process that will rapidly remove defects while continuing to maintain the desired semi-anisotropic etch profile, uncharacteristic of most wet immersion etch processes. Results attested that rapid exposure to dilute (40%) nitric acid followed by immediate immersion into a cleaning agent, proprietary nickel etchant, and titanium tungsten etchant removed all nickel oxide defects. Upon implementation, this method has the potential to reduce scrap due to excess metal by 3% and reduce overall etch process time by 25%. In addition, a process was developed to completely etch patterned substrates with high defect density mid process and rework them from raw substrates.
by Neha H. Dave.
M.Eng.in Manufacturing
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Books on the topic "Anisotropic Etching"

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Dixon, Elizabeth. The chemical and electrochemical anisotropic etching of silicon. Portsmouth: University of Portsmouth, School of Pharmacy, Biomedical and Physical Sciences, 1997.

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Book chapters on the topic "Anisotropic Etching"

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House, Dustin, and Dongqing Li. "Anisotropic Etching." In Encyclopedia of Microfluidics and Nanofluidics, 65–67. New York, NY: Springer New York, 2015. http://dx.doi.org/10.1007/978-1-4614-5491-5_35.

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House, Dustin, and Dongqing Li. "Anisotropic Etching." In Encyclopedia of Microfluidics and Nanofluidics, 1–4. Boston, MA: Springer US, 2014. http://dx.doi.org/10.1007/978-3-642-27758-0_35-3.

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Zhou, Zai-Fa, and Qing-An Huang. "Modeling and Simulation of Silicon Anisotropic Etching." In Micro/Nano Technologies, 3–25. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-5945-2_1.

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Zhou, Zai-Fa, and Qing-An Huang. "Modeling and Simulation of Silicon Anisotropic Etching." In Toxinology, 1–23. Dordrecht: Springer Netherlands, 2017. http://dx.doi.org/10.1007/978-981-10-2798-7_1-1.

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Sasaki, M., T. Fujii, Yigui Li, and K. Hane. "Anisotropic Si Etching Technique for Optically Smooth Surfaces." In Transducers ’01 Eurosensors XV, 604–7. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_143.

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Che, Woo Seong, Chang Gil Suk, Tae Gyu Park, Jun Tae Kim, and Jun Hyub Park. "The Improvement of Wet Anisotropic Etching with Megasonic Wave." In Key Engineering Materials, 557–61. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-978-4.557.

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Astrova, E. V., T. S. Perova, and V. A. Tolmachev. "1D Periodic Structures Obtained by Deep Anisotropic Etching of Silicon." In Frontiers of Multifunctional Integrated Nanosystems, 205–12. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/1-4020-2173-9_20.

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Sheu, J. T., H. T. Chou, W. L. Cheng, C. H. Wu, and L. S. Yeou. "Silicon Nanomachining by Scanning Probe Lithography and Anisotropic Wet Etching." In Microsystems, 157–74. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4757-5791-0_8.

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Hines, Melissa A. "Machining with chemistry: Controlling nanoscale surface structure with anisotropic etching." In Nanostructure Science and Technology, 249–80. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4419-9046-4_8.

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Shikida, Mitsuhiro, Ken-ichi Nanbara, Tohru Koizumi, Hikaru Sasaki, Michiaki Odagaki, Kazuo Sato, Masaki Ando, Shinji Furuta, and Kazuo Asaumi. "A New Explanation of Mask-corner Undercut in Anisotropic Silicon Etching: Saddle Point in Etching Rate Diagram." In Transducers ’01 Eurosensors XV, 648–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_154.

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Conference papers on the topic "Anisotropic Etching"

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Ahmad, Shamin, and Virendra K. Dwivedi. "Anisotropic chemical etching of silicon." In Smart Materials, Structures and MEMS, edited by Vasu K. Aatre, Vijay K. Varadan, and Vasundara V. Varadan. SPIE, 1998. http://dx.doi.org/10.1117/12.305554.

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Dikareva, R. P., A. V. Kamenskaja, D. A. Langueva, and S. V. Zaozyornova. "Features of anisotropic etching of silicon." In 2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings. IEEE, 2002. http://dx.doi.org/10.1109/sredm.2002.1024329.

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Chan, Clarence Y., Shunya Namiki, Jennifer K. Hite, and Xiuling Li. "Plasma-free Anisotropic Etching of GaN." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_si.2021.sth4j.5.

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Sekimura, M. "Anisotropic etching of surfactant-added TMAH solution." In Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291). IEEE, 1999. http://dx.doi.org/10.1109/memsys.1999.746904.

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Zhang, Hui, Yan Xing, Jin Zhang, and Yuan Li. "The microscopic activation energy etching mechanism in anisotropic wet etching of quartz." In 2018 IEEE Micro Electro Mechanical Systems (MEMS). IEEE, 2018. http://dx.doi.org/10.1109/memsys.2018.8346591.

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Wen, Dianzhong. "Design a System of Ar-Ion Laser Enhanced Anisotropic Etching." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21037.

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This paper a System of argon-ion laser enhanced anisotropic etching is designed. A basic description of the structure and principle of the system will first be presented. This system can be described as enhanced etching rate of silicon. It also has the important advantage of not requiring the silicon is covered with a thick of oxide or other masked for any plane of silicon crystal that adds considerable complexity to the manufacture. When experiment temperature is 90 °C and KOH density is 34mol, an averaged instantaneous etching rate as high 25μm/min has been observed in silicon for a 4.6W input laser power, this etching rate register a 500% increase model on conventional anisotropic etching of silicon. Discussing the anisotropic etching rate of silicon dependence on the laser power and on the temperature are further. The experiment results show that the system structure design is reasonable and it can meet the requirement of every planes of silicon crystal etching, it can be used widely in variety of application aspects.
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Li, Jianhua, Yan Wang, Jingyuan Chen, and Li Yan. "GPU-Based Parallel Simulation of Silicon Anisotropic Etching." In ASME 2012 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/detc2012-71267.

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Silicon anisotropic etching simulation, based on geometric model or cellular automata (CA) model, is highly time-consuming. In this paper, we propose two parallelization methods for the simulation of the silicon anisotropic etching process with CA models on graphics processing units (GPUs). One is the direct parallelization of the serial CA algorithm, and the other is to use a spatial parallelization strategy where each crystal unit cell is allocated to a thread in GPU. The proposed simulation methods are implemented with the Compute Unified Device Architecture (CUDA) application programming interface. Several computational experiments are taken to analyze the efficiency of the methods.
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Takeuchi, Masaya, Akinobu Yamaguchi, and Yuichi Utsumi. "Anisotropic Pyrochemical Etching of PTFE by Synchrotron Radiation." In 2019 IEEE 14th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE, 2019. http://dx.doi.org/10.1109/nems.2019.8915627.

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Weihua Han, Xiang Yang, Ying Wang, Fuhua Yang, and Jinzhong Yu. "Fabrication method of silicon nanostructures by anisotropic etching." In 2008 5th IEEE International Conference on Group IV Photonics. IEEE, 2008. http://dx.doi.org/10.1109/group4.2008.4638126.

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Mishima, T., K. Terao, H. Takao, F. Shimokawa, F. Oohira, and T. Suzuki. "Crystalline anisotropic dry etching for single crystal silicon." In 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2011. http://dx.doi.org/10.1109/memsys.2011.5734401.

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