Academic literature on the topic 'Anisotropic etching by cryogenic plasma'
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Journal articles on the topic "Anisotropic etching by cryogenic plasma"
Isakovic, A. F., K. Evans-Lutterodt, D. Elliott, A. Stein, and J. B. Warren. "Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6∕O2." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 26, no. 5 (September 2008): 1182–87. http://dx.doi.org/10.1116/1.2960557.
Full textWhang, Ki Woong, Seok Hyun Lee, and Ho Jun Lee. "Cryogenic electron cyclotron resonance plasma etching." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, no. 4 (July 1992): 1307–12. http://dx.doi.org/10.1116/1.578244.
Full textMuttalib, Muhammad Firdaus A., Ruiqi Y. Chen, Stuart J. Pearce, and Martin D. B. Charlton. "Anisotropic Ta2O5 waveguide etching using inductively coupled plasma etching." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32, no. 4 (July 2014): 041304. http://dx.doi.org/10.1116/1.4884557.
Full textHsiao, R., K. Yu, L. S. Fan, T. Pandhumsopom, H. Sanitini, S. A. Macdonald, and N. Robertson. "Anisotropic Etching of a Novalak‐Based Polymer at Cryogenic Temperature." Journal of The Electrochemical Society 144, no. 3 (March 1, 1997): 1008–13. http://dx.doi.org/10.1149/1.1837521.
Full textZhang, Quan-Zhi, Stefan Tinck, Jean-François de Marneffe, Liping Zhang, and Annemie Bogaerts. "Mechanisms for plasma cryogenic etching of porous materials." Applied Physics Letters 111, no. 17 (October 23, 2017): 173104. http://dx.doi.org/10.1063/1.4999439.
Full textAydil, Eray S., Jeffrey A. Gregus, and Richard A. Gottscho. "Electron cyclotron resonance plasma reactor for cryogenic etching." Review of Scientific Instruments 64, no. 12 (December 1993): 3572–84. http://dx.doi.org/10.1063/1.1144284.
Full textKnizikevičius, R., and V. Kopustinskas. "Anisotropic etching of silicon in SF6 plasma." Vacuum 77, no. 1 (December 2004): 1–4. http://dx.doi.org/10.1016/j.vacuum.2004.07.063.
Full textSwanson, G. D., Takashi Tamagawa, and D. L. Polla. "Anisotropic Plasma Etching of Sputtered Zinc Oxide." Journal of The Electrochemical Society 137, no. 9 (September 1, 1990): 2982–84. http://dx.doi.org/10.1149/1.2087111.
Full textEtrillard, Jackie, Jean-Marc Francou, Alain Inard, and Daniel Henry. "Anisotropic Etching of Submicronic Resist Structures by Resonant Inductive Plasma Etching." Japanese Journal of Applied Physics 33, Part 1, No. 10 (October 15, 1994): 6005–12. http://dx.doi.org/10.1143/jjap.33.6005.
Full textVerhey, T. R., J. J. Rocca, and P. K. Boyer. "Anisotropic plasma‐chemical etching by an electron‐beam‐generated plasma." Journal of Applied Physics 63, no. 7 (April 1988): 2463–66. http://dx.doi.org/10.1063/1.341023.
Full textDissertations / Theses on the topic "Anisotropic etching by cryogenic plasma"
Vital, Alexane. "Elaboration de masques nano poreux de polymères et gravure profonde du silicium." Thesis, Orléans, 2016. http://www.theses.fr/2016ORLE2011/document.
Full textIn microelectronics, current techniques for supercapacitors manufacturing requires the development of nanostructured patterns with high specific surface. We are interested in an emerging alternative approach to conventional 'top-down' fabrication techniques based on blends of homopolymers. Indeed, two polymers with different chemistries in thin films can lead to phase separation with cylindrical domains of sub-micrometer size. A cryogenic plasma through these masks can produce nanostructuration with a high specific surface. The work of this thesis focused on the realization of thin films and on the understanding of the mechanisms to obtain the final morphology. A study on solvent deposition and exposure was led to determine their influence on the morphologies. The parameters influencing the size of the domains are then studied. Domains of less than 100 nm were obtained. Finally, the study of an alternative method of deposition by dip-coating enabled to obtain a variety of morphologies in one step and for the same solution. This work was then directed towards the realization of structured surfaces by plasma etching of the silicon through this masks. Two methods were used, adapted and optimized to achieve deep etched without default. The process StiGer aniso allows to obtain this and with better repeatability. Another axis is developed. It is focused on the optimization of the selectivity by modifying the nature of the mask. We succeed in obtaining a selectivity of 70: 1 with a mask of poly(styrene) stained by Ru
Steiner, Pinckney Alston IV. "Anisotropic low-energy electron-enhanced etching of semiconductors in DC plasma." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/27060.
Full textLarsson, Daniel. "Cryogenic Etching of the Electroplating Mold for Improved Zone Plate Lenses." Thesis, KTH, Applied Physics, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-12109.
Full textThe fabrication of zone plate lenses that are used for focusing X-rays relies on nanofabrication techniques such as e-beam lithography, reactive ion etching, and electroplating. The circular grating-like zone plate pattern can have a smallest half-period, a so-called zone width, of down to 20 nm while it also needs to have a height that is 5 to 10 times the zone width to have good diffraction efficiency. This high aspect ratio structuring is a very challenging field of nanofabrication.
This diploma project has focused on improving the process step of fabricating the electroplating mold by cryo-cooling the polymer during the reactive ion etching with O2. The low temperature causes passivation of the sidewalls of the mold during etching which results in a more ideal rectangular profile of the high aspect ratio plating mold.
By etching at -100 °C, structures with highly vertical sidewalls and no undercut were realized. The experiments showed that there is a tradeoff between the anisotropy of the zone profile and the formation rate of polymer residue, so-called RIE grass. Through a proper choice of process parameters the grass could be completely removed without introducing any undercut.
QC 20100414
Ishchuk, Valentyn Verfasser], Ivo W. [Akademischer Betreuer] [Rangelow, Franz [Akademischer Betreuer] Gerhard, and Deirdre [Akademischer Betreuer] Olynick. "Profile simulations of plasma etching of silicon under consideration of charging effect and cryogenic condition / Valentyn Ishchuk. Gutachter: Franz Gerhard ; Deirdre Olynick. Betreuer: Ivo W. Rangelow." Ilmenau : Universitätsbibliothek Ilmenau, 2015. http://d-nb.info/1075492882/34.
Full textIshchuk, Valentyn [Verfasser], Ivo W. [Akademischer Betreuer] Rangelow, Franz [Akademischer Betreuer] Gerhard, and Deirdre [Akademischer Betreuer] Olynick. "Profile simulations of plasma etching of silicon under consideration of charging effect and cryogenic condition / Valentyn Ishchuk. Gutachter: Franz Gerhard ; Deirdre Olynick. Betreuer: Ivo W. Rangelow." Ilmenau : Universitätsbibliothek Ilmenau, 2015. http://d-nb.info/1075492882/34.
Full textKrátký, Stanislav. "Technologie leptání křemíku." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2012. http://www.nusl.cz/ntk/nusl-219382.
Full textDing, Ruhang. "Anisotropic fluorocarbon plasma etching of Si/SiGe heterostructures and plasma etching-induced sidewall damage." 2008. http://www.library.wisc.edu/databases/connect/dissertations.html.
Full textHuang, Wen-sheh, and 黃文社. "Highly Anisotropic RF Plasma Silicon Deep Trench Etching." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/12171055506898824244.
Full text國立清華大學
電機工程學系
85
Etching of highly anisotropic deep silicon trench is achieved by the combination of black silicon method (BSM) and additional sidewall passivation (ASP) techniques .The depth is larger than 10 um and anisotropy is 0.98. aspect ratio dependent etching (ARDE) phenomenon is also observed and discussed with ASP model. Without using the additional features such as low temperature (~ -120℃) and low pressure( <10 mT) ,or high density plasma to RIE, we propose a method to achieve deep silicon etch with vertical sidewall microstructure using ordinary a parallel plate RIE reactor. The concepts of this method come from the BSM and ASP processes. Though BSM has already been proposed as a process sequence to find the most vertical etching condition for common RIE system , there still exist some theory uncertainties and problems
Book chapters on the topic "Anisotropic etching by cryogenic plasma"
Rutkūnienė, Ž., A. Grigonis, and R. Knizikevičius. "The Anisotropic Etching of Silicon in CF4, CF4 + H2 and CF4-XCLX Plasma." In Advanced Technologies Based on Wave and Beam Generated Plasmas, 469–70. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-017-0633-9_20.
Full textConference papers on the topic "Anisotropic etching by cryogenic plasma"
Chan, Clarence Y., Shunya Namiki, Jennifer K. Hite, and Xiuling Li. "Plasma-free Anisotropic Etching of GaN." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_si.2021.sth4j.5.
Full textTorigoe, R., T. Urakawa, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, and M. Hori. "Plasma etching resistance of plasma anisotropic CVD carbon films." In 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS). IEEE, 2012. http://dx.doi.org/10.1109/plasma.2012.6383665.
Full textLee, Seok Hwan, Chul-Jin Kim, Hyun-Woo Hwang, Sung-Joo Kim, Hyun-Seok Yang, No-Cheol Park, Young-Pil Park, Kang-Ho Park, Hyung-Kun Lee, and Nak-Jin Choi. "Performance enhancement of IPMC by anisotropic plasma etching process." In SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, edited by Yoseph Bar-Cohen and Thomas Wallmersperger. SPIE, 2009. http://dx.doi.org/10.1117/12.815685.
Full textParamonov, Vladislav V., Mikhail G. Putrya, and Tatiana V. Osipova. "Development of the Silicon Through Anisotropic Plasma Etching Process." In 2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus). IEEE, 2021. http://dx.doi.org/10.1109/elconrus51938.2021.9396279.
Full textChen, Y. Y., Z. H. Ye, C. H. Sun, S. Zhang, X. N. Hu, R. J. Ding, and L. He. "Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature." In SPIE Defense + Security, edited by Bjørn F. Andresen, Gabor F. Fulop, Charles M. Hanson, John L. Miller, and Paul R. Norton. SPIE, 2016. http://dx.doi.org/10.1117/12.2222825.
Full textYu, Keven, Michael Feldbaum, Tam Pandhumsoporn, and Prashant Gadgil. "Deep anisotropic ICP plasma etching designed for high-volume MEMS manufacturing." In Symposium on Micromachining and Microfabrication, edited by James H. Smith and Jean Michel Karam. SPIE, 1999. http://dx.doi.org/10.1117/12.361224.
Full textChapman, Glenn H., Yuqiang Tu, and Jun Peng. "Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO 2 plasma etching." In Micromachining and Microfabrication, edited by Mary A. Maher and Jerome F. Jakubczak. SPIE, 2004. http://dx.doi.org/10.1117/12.524690.
Full textGunapu, D. V. Santhosh Kumar, Jose Joseph, Shiv Govind Singh, and Siva Rama Krishna Vaniari. "Selective Anisotropic Dry Etching of Piezoelectric Silk Microstructures Using Oxygen Plasma Ashing." In 2018 IEEE Sensors. IEEE, 2018. http://dx.doi.org/10.1109/icsens.2018.8589957.
Full textPandhumsoporn, Tam, Lei Wang, Michael Feldbaum, Prashant Gadgil, Michel Puech, and Philippe Maquin. "High-etch-rate deep anisotropic plasma etching of silicon for MEMS fabrication." In 5th Annual International Symposium on Smart Structures and Materials, edited by Vijay K. Varadan, Paul J. McWhorter, Richard A. Singer, and Michael J. Vellekoop. SPIE, 1998. http://dx.doi.org/10.1117/12.320159.
Full textMiakonkikh, Andrey V., Alexander E. Rogozhin, Konstantin V. Rudenko, Vladimir F. Lukichev, Vyacheslav A. Yunkin, and Anatoly A. Snigirev. "Elements for hard X-ray optics produced by cryogenic plasma etching of silicon." In The International Conference on Micro- and Nano-Electronics 2016, edited by Vladimir F. Lukichev and Konstantin V. Rudenko. SPIE, 2016. http://dx.doi.org/10.1117/12.2266471.
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