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Journal articles on the topic 'Anisotropic Etching'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Lamichhane, Shobha Kanta. "Experimental investigation on anisotropic surface properties of crystalline silicon." BIBECHANA 8 (January 15, 2012): 59–66. http://dx.doi.org/10.3126/bibechana.v8i0.4828.

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Anisotropic etching of silicon has been studied by wet potassium hydroxide (KOH) etchant with its variation of temperature and concentration. Results presented here are temperature dependent etch rate along the crystallographic orientations. The etching rate of the (111) surface family is of prime importance for microfabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of (111) remains unclear. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study demonstrate that the contribution of microscopic activation energy that effectively controls the etching process. Such a strong anisotropy in KOH allows us a precious control of lateral dimensions of the silicon microstructure.Keywords: microfabrication; activation energy; concentration; anisotropy; crystal planeDOI: http://dx.doi.org/10.3126/bibechana.v8i0.4828 BIBECHANA 8 (2012) 59-66

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2

Barycka, Irena, and Irena Zubel. "Silicon anisotropic etching in KOH-isopropanol etchant." Sensors and Actuators A: Physical 48, no. 3 (May 1995): 229–38. http://dx.doi.org/10.1016/0924-4247(95)00992-2.

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3

Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Simple Microcantilever Release Process of Silicon Piezoresistive Microcantilever Sensor Using Wet Etching." Applied Mechanics and Materials 660 (October 2014): 894–98. http://dx.doi.org/10.4028/www.scientific.net/amm.660.894.

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In this paper, a simple microcantilever release process using anisotropic wet etching is presented. The microcantilever release is conducted at the final stage of the fabrication of piezoresistive microcantilever sensor. Issues related to microcantilever release such as microscopic roughness and macroscopic roughness has been resolved using simple technique. By utilizing silicon oxide (SiO2) as the etch stop for the wet etching process, issues related to microscopic roughness can be eliminated. On the other hand, proper etching procedure with constant stirring of the etchant solution of KOH anisotropic etching significantly reduces the notching effect contributed by the macroscopic roughness. Upon the completion of microcantilever release, suspended microcantilever of 2μm thick is realized with the removal of SiO2layer using Buffered Oxide Etching (BOE).

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4

Naseh, S., L. M. Landsberger, M. Kahrizi, and M. Paranjape. "Experimental investigations of anisotropic etching of Si in tetramethyl ammonium hydroxide." Canadian Journal of Physics 74, S1 (December 1, 1996): 79–84. http://dx.doi.org/10.1139/p96-837.

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Anisotropic etching of silicon in tetramethyl ammonium hydroxide (TMAH) is receiving attention as a relatively nontoxic alternative anisotropic etchant for silicon (Si), for the fabrication of microelectromechanical systems, sensors, and actuators. This work presents experimental investigations on several aspects of anisotropic etching of Si in TMAH. The effects of temperature and concentration on etch rates of {100} and {110} wafers are characterized. Several previously unreported experimental findings aimed at better understanding the atomic level mechanisms are presented: underetch-rate variation with mask-edge deviation, an investigation of stirring, and a subtle effect of applied bending stress.

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5

Zubel, Irena. "Anisotropic etching of Si." Journal of Micromechanics and Microengineering 29, no. 9 (July 30, 2019): 093002. http://dx.doi.org/10.1088/1361-6439/ab2b8d.

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6

Syväjärvi, M., R. Yakimova, and E. Janzén. "Anisotropic Etching of SiC." Journal of The Electrochemical Society 147, no. 9 (2000): 3519. http://dx.doi.org/10.1149/1.1393930.

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7

Leancu, Ralu, N. Moldovan, L. Csepregi, and W. Lang. "Anisotropic etching of germanium." Sensors and Actuators A: Physical 46, no. 1-3 (January 1995): 35–37. http://dx.doi.org/10.1016/0924-4247(94)00856-d.

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8

Tellier, C. R., T. G. Leblois, and A. Charbonnieras. "Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH." Active and Passive Electronic Components 23, no. 1 (2000): 37–51. http://dx.doi.org/10.1155/apec.23.37.

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This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant on two dimensional and three dimensional etching shapes.

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9

Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Double-Step Plasma Etching for SiO₂ Microcantilever Release." Advanced Materials Research 254 (May 2011): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.254.140.

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In this paper, an isotropic dry plasma etching was used to release the suspended SiO2 microcantilever from the substrate of SOI wafer. Employing the plasma dry etching technique, the frontside etching for the SiO2 microcantilever release is done using the Oxford Plasmalab System 100. To obtain the optimum condition for the microcantilever release using the plasma etcher, the etching parameters involved are 100 sccm of SF6 flow, 2000 W of capacitively coupled plasma (CCP) power, 3 W of inductively coupled plasma (ICP) power, 20°C of etching temperature and 30 mTorr chamber pressure. The optimum parameters yield lateral etch rate of about 5 μm/min and vertical etch rate of about 8 μm/min. Two etching methods have been considered in this study. The first method employs only the isotropic etching to realize the microcantilever release while the second method utilizes both the anisotropic etching and the isotropic etching. For the second method, the process starts with the anisotropic etching from the deep reactive ion etching (DRIE) system which is then followed by the isotropic etching to complete the microcantilever releasing process. The purpose of the anisotropic etching is to create an etching window for the subsequent isotropic etching process. By using double-step etching method which combines both isotropic and anisotropic plasma etching for the microcantilever release process, the releasing process of suspended microcantilever is significantly improved.

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10

Lim, Sung Jun, Wonjung Kim, Sunghan Jung, Jongcheol Seo, and Seung Koo Shin. "Anisotropic Etching of Semiconductor Nanocrystals." Chemistry of Materials 23, no. 22 (November 22, 2011): 5029–36. http://dx.doi.org/10.1021/cm202514a.

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11

Cambaz, Goknur Z., Gleb N. Yushin, Yury Gogotsi, and Vadim G. Lutsenko. "Anisotropic Etching of SiC Whiskers." Nano Letters 6, no. 3 (March 2006): 548–51. http://dx.doi.org/10.1021/nl051858v.

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12

Aachboun, S., and P. Ranson. "Deep anisotropic etching of silicon." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17, no. 4 (July 1999): 2270–73. http://dx.doi.org/10.1116/1.581759.

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13

Shul, R. J., G. B. McClellan, and C. T. Sullivan. "Anisotropic ECR etching of benzocyclobutene." Electronics Letters 31, no. 22 (October 26, 1995): 1919–21. http://dx.doi.org/10.1049/el:19951321.

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14

Merlos, A., M. Acero, M. H. Bao, J. Bausells, and J. Esteve. "TMAH/IPA anisotropic etching characteristics." Sensors and Actuators A: Physical 37-38 (June 1993): 737–43. http://dx.doi.org/10.1016/0924-4247(93)80125-z.

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15

Klumpp, A., K. Kühl, U. Schaber, H. U. Käufl, and W. Lang. "Anisotropic etching for optical gratings." Sensors and Actuators A: Physical 51, no. 1 (October 1995): 77–80. http://dx.doi.org/10.1016/0924-4247(95)01074-2.

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16

CHOI, S. S., M. Y. JUNG, J. W. KIM, J. H. BOO, and J. S. YANG. "FABRICATION OF NEARFIELD OPTICAL PROBE ARRAY USING VARIOUS NANOFABRICATION PROCEDURES." International Journal of Nanoscience 02, no. 04n05 (August 2003): 283–91. http://dx.doi.org/10.1142/s0219581x03001309.

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The nanosize silicon oxide aperture on the cantilever array has been successfully fabricated as nearfield optical probe. The various semiconductor processes were utilized for subwavelength size aperture fabrication. The anisotropic etching of the Si substrate by alkaline solutions followed by anisotropic crystal orientation dependent oxidation, anisotropic plasma etching, isotropic oxide etching was carried out. The 3 and 4 micron size dot array were patterned on the Si(100) wafer. After fabrication of the V-groove shape by anisotropic TMAH etching, the oxide growth at 1000° C was performed to have an oxide etch-mask. The oxide layer on the Si(111) plane have been utilized as an etch mask for plasma dry etching and water-diluted HF wet etching for nanosize aperture fabrication. The Au thin layer was deposited on the fabricated oxide nanosize aperture on the cantilever array. The 160 nm metal apertures on (5×1) cantilever array were successfully fabricated using electron beam evaporator.

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17

Shang, Zheng Guo, Zhi Yu Wen, Dong Ling Li, and Sheng Qiang Wang. "Application of KOH Anisotropic Etching in the Fabrication of MEMS Devices." Key Engineering Materials 483 (June 2011): 62–65. http://dx.doi.org/10.4028/www.scientific.net/kem.483.62.

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It is known that the wet chemical etching of silicon in alkaline solution has attracted wide attention due to its advantages such as lower cost, simpler setup, higher rate, smoother surface at micro level, higher degree of anisotropy, and lower pollution. In this paper, the key processes of fabricating vacuum microelectronic accelerometer and slits are presented. The cone curvature radius of the silicon tip arrays less than 30nm was fabricated with wet anisotropic etching of silicon in 33wt. % KOH solution at 70°C added potassium iodine (KI) and Iodine (I2) as additive and the cone aspect ratio was about 0.7. Smooth surface after etching in 33wt. %KOH solution added isopropyl alcohol (IPA) at 80°C was obtained and lateral etching was less than 5um after etching several hours for etching depth over 400um. Scalar slits with bottom width 25um and depth 500um were attained. A constant etch rate lead to precise and reproducible production. The test result reveals that the process to a specific occasion can reach practical requirements.

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18

Muttalib, Muhammad Firdaus A., Ruiqi Y. Chen, Stuart J. Pearce, and Martin D. B. Charlton. "Anisotropic Ta2O5 waveguide etching using inductively coupled plasma etching." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32, no. 4 (July 2014): 041304. http://dx.doi.org/10.1116/1.4884557.

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19

Lawrowski, Robert Damian, Christian Prommesberger, Christoph Langer, Florian Dams, and Rupert Schreiner. "Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching." Advances in Materials Science and Engineering 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/948708.

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The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity. At low power the height and undercut of the emitters are more constant over the whole wafer. The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity. This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays.

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20

Radjenovic, Branislav, and Marija Radmilovic-Radjenovic. "Level set simulations of the anisotropic wet etching process for device fabrication in nanotechnologies." Chemical Industry 64, no. 2 (2010): 93–97. http://dx.doi.org/10.2298/hemind100205008r.

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Chemical etching is employed as micromachining manufacturing process to produce micron-size components. As a semiconductor wafer is extremely expensive due to many processing steps involved in the making thereof, the need to critically control the etching end point in an etching process is highly desirable. It was found that not only the etchant and temperature determine the exact anisotropy of etched silicon. The angle between the silicon surface and the mask was also shown to play an important role. In this paper, angular dependence of the etching rate is calculated on the base of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal <100>, <110>, <111> directions in KOH solutions. The calculations are performed using an extension of the sparse field method for solving three dimensional (3D) level set equations that describe the morphological surface evolution during etching process. The analysis of the obtained results confirm that regardless of the initial shape the profile evolution ends with the crystal form composed of the fastest etching planes, {110} in our model.

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21

Kashkoush, Ismail, Jennifer Rieker, Gim Chen, and Dennis Nemeth. "Process Control Challenges of Wet Etching Large MEMS Si Cavities." Solid State Phenomena 219 (September 2014): 73–77. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.73.

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Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants like aqueous KOH, TMAH and other hydroxides like NaOH. With the strong dependence of the etch rate on crystal orientation and on etchant concentration and temperature, a large variety of silicon structures can be fabricated in a highly controllable and reproducible manner. Hence, anisotropic etching of <100> silicon has been a key process in common MEMS based technologies for realizing 3-D structures [1-4]. These structures include V-grooves for transistors, small holes for ink jets and diaphragms for MEMS pressure sensors as shown in Figure 1 [1]. The actual reaction mechanism has not been well understood and comprehensive physical and chemical models for the process have not yet been developed. With increasing numbers of MEMS applications, interest has grown in recent years for process modelling, simulation and software tools useful for the prediction of etched surface profiles [4-6].

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22

Che, Woo Seong, Chang Gil Suk, Tae Gyu Park, Jun Tae Kim, and Jun Hyub Park. "The Improvement of Wet Anisotropic Etching with Megasonic Wave." Key Engineering Materials 297-300 (November 2005): 557–61. http://dx.doi.org/10.4028/www.scientific.net/kem.297-300.557.

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A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as the etch rate, etch uniformity, surface roughness. The etching uniformity was less than ±1% on the whole wafer. The initial root-mean-squre roughness(Rrms) of single crystal silicon is 0.23nm [1]. It has been reported that the roughnesses with magnetic stirring and ultrasonic agitation were 566nm and 66nm [3]. But with megasonic irradiation, the Rrms of 1.7nm was achieved for the surface of 37µm depth. Wet etching of silicon with megasonic irradiation can maintain nearly the original surface roughness during etching. The results have verified that the megasonic irradiation is an effective way to improve the etching characteristics - the etch rate, etch uniformity and surface roughness.

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23

FURUKAWA, Yuji, and Seiji HIRAI. "An Analysis of Anisotropic Etching Process. Etching toward Depth Direction." Journal of the Japan Society for Precision Engineering 58, no. 2 (1992): 283–88. http://dx.doi.org/10.2493/jjspe.58.283.

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24

SATO, KAZUO. "Anisotropic etching of single crystal silicon." Journal of the Japan Society for Precision Engineering 53, no. 6 (1987): 849–52. http://dx.doi.org/10.2493/jjspe.53.849.

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25

Yamamoto, Mahito, Theodore L. Einstein, Michael S. Fuhrer, and William G. Cullen. "Anisotropic Etching of Atomically Thin MoS2." Journal of Physical Chemistry C 117, no. 48 (November 20, 2013): 25643–49. http://dx.doi.org/10.1021/jp410893e.

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26

Koike, Kunihiko, Yu Yoshino, Takehiko Senoo, Toshio Seki, Satoshi Ninomiya, Takaaki Aoki, and Jiro Matsuo. "Anisotropic Etching Using Reactive Cluster Beams." Applied Physics Express 3, no. 12 (December 10, 2010): 126501. http://dx.doi.org/10.1143/apex.3.126501.

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27

Hedlund, C., U. Lindberg, U. Bucht, and J. Soderkvist. "Anisotropic etching of Z-cut quartz." Journal of Micromechanics and Microengineering 3, no. 2 (June 1, 1993): 65–73. http://dx.doi.org/10.1088/0960-1317/3/2/006.

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28

Shikida, Mitsuhiro. "Anisotropic Wet Etching for Micro-Fabrication." IEEJ Transactions on Sensors and Micromachines 128, no. 9 (2008): 341–46. http://dx.doi.org/10.1541/ieejsmas.128.341.

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29

Tao, Yi, and Masayoshi Esashi. "Macroporous silicon-based deep anisotropic etching." Journal of Micromechanics and Microengineering 15, no. 4 (February 15, 2005): 764–70. http://dx.doi.org/10.1088/0960-1317/15/4/013.

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30

Blumenstock, K. "Anisotropic reactive ion etching of titanium." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 4 (July 1989): 627. http://dx.doi.org/10.1116/1.584806.

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31

Gosálvez, M. A., K. Sato, A. S. Foster, R. M. Nieminen, and H. Tanaka. "An atomistic introduction to anisotropic etching." Journal of Micromechanics and Microengineering 17, no. 4 (March 20, 2007): S1—S26. http://dx.doi.org/10.1088/0960-1317/17/4/s01.

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32

Messier, R. "Anisotropic etching during negative ion resputtering." Applied Surface Science 22-23 (May 1985): 111–17. http://dx.doi.org/10.1016/0169-4332(85)90042-x.

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33

Séquin, Carlo H. "Computer simulation of anisotropic crystal etching." Sensors and Actuators A: Physical 34, no. 3 (September 1992): 225–41. http://dx.doi.org/10.1016/0924-4247(92)85006-n.

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34

Gajda, M. A., H. Ahmed, J. E. A. Shaw, and A. Putnis. "Anisotropic etching of silicon in hydrazine." Sensors and Actuators A: Physical 40, no. 3 (March 1994): 227–36. http://dx.doi.org/10.1016/0924-4247(94)87009-8.

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35

Linde, Harold G., and Larry W. Austin. "Catalytic control of anisotropic silicon etching." Sensors and Actuators A: Physical 49, no. 3 (July 1995): 181–85. http://dx.doi.org/10.1016/0924-4247(95)01019-x.

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36

Danel, J. S., and G. Delapierre. "Anisotropic crystal etching: A simulation program." Sensors and Actuators A: Physical 31, no. 1-3 (March 1992): 267–74. http://dx.doi.org/10.1016/0924-4247(92)80115-j.

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37

Messier, Russell, and Daniel J. Kester. "Anisotropic etching during negative ion resputtering." Applications of Surface Science 22-23 (May 1985): 111–17. http://dx.doi.org/10.1016/0378-5963(85)90042-x.

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38

Mehregany, Mehran, and Stephen D. Senturia. "Anisotropic etching of silicon in hydrazine." Sensors and Actuators 13, no. 4 (April 1988): 375–90. http://dx.doi.org/10.1016/0250-6874(88)80050-7.

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39

Radjenovic, Branislav, Petar Belicev, and Marija Radmilovic-Radjenovic. "Three-dimensional simulations of the surface topography evolution of niobium superconducting radio frequency cavities." Nuclear Technology and Radiation Protection 29, no. 2 (2014): 97–101. http://dx.doi.org/10.2298/ntrp1402097r.

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This paper contains results of the three-dimensional simulations of the surface topography evolution of the niobium superconducting radio frequency cavities during isotropic and anisotropic etching modes. The initial rough surface is determined from the experimental power spectral density. The simulation results based on the level set method reveal that the time dependence of the root mean square roughness obeys Family-Viscek scaling law. The growth exponential factors b are determined for both etching modes. Exponential factor for the isotropic etching is 100 times lower than that for the anisotropic etching mode reviling that the isotropic etching is very useful mechanism of the smoothing. [Projekat Ministarstva nauke Republike Srbije, br. O171037 i br. III45006

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40

Pacco, Antoine, Zainul Aabdin, Utkarsh Anand, Jens Rip, Utkur Mirsaidov, and Frank Holsteyns. "Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions." Solid State Phenomena 282 (August 2018): 88–93. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.88.

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A qualitative and semi quantitative analysis of anisotropic etching of silicon nanostructures in alkaline solutions was done. Dedicated nanostructures were fabricated on 300mm wafers and their geometric change during wet etching was analyzed, stepwise, by top down SEM or TEM. We challenge the previously described wagon wheel technique towards nanodimensions and describe the pros and cons of the technique using relevant experimental conditions. The formation of specific geometric patterns are explained by the face-specificity of the etch rates. Clear differences in anisotropy were revealed between pillars etched in KOH or in TMAH, and for wagon wheels etched in TMAH or in NH4OH. Finally etch rates were extracted for the different types of crystal planes and compared.

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41

González-Díaz, B., R. Guerrero-Lemus, N. Marrero, C. Hernández-Rodríguez, F. A. Ben-Hander, and J. M. Martínez-Duart. "Anisotropic textured silicon obtained by stain-etching at low etching rates." Journal of Physics D: Applied Physics 39, no. 4 (February 3, 2006): 631–34. http://dx.doi.org/10.1088/0022-3727/39/4/006.

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42

Hara, Tohru, Takeshi Hirayama, Hirofumi Ando, and Masakazu Furukawa. "Anisotropic Wet Etching of Aluminum Electrodes by an Evacuated Etching System." Journal of The Electrochemical Society 132, no. 12 (December 1, 1985): 2973–75. http://dx.doi.org/10.1149/1.2113705.

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43

Etrillard, Jackie, Jean-Marc Francou, Alain Inard, and Daniel Henry. "Anisotropic Etching of Submicronic Resist Structures by Resonant Inductive Plasma Etching." Japanese Journal of Applied Physics 33, Part 1, No. 10 (October 15, 1994): 6005–12. http://dx.doi.org/10.1143/jjap.33.6005.

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44

WEI, YUN, HAO PAN, JIESHU QIAN, and XINGFU ZHOU. "A GENERAL ANISOTROPIC ETCHING STRATEGY FOR THE FABRICATION OF TUBE-LIKE OR MESOPOROUS SINGLE CRYSTAL TiO2." Functional Materials Letters 06, no. 06 (November 27, 2013): 1350051. http://dx.doi.org/10.1142/s1793604713500513.

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A general anisotropic etching strategy is proposed here for the synthesis of four types of novel TiO 2 materials with versatile tube-like and single-crystalline mesoporous micro-nanostructures. All the tube-like TiO 2 materials have V-shaped inner structure and the mesoporous products have high single-crystallinity. In the fabrication process, etching agents and titanium sources play vital role in determining the morphology of the TiO 2 products. This opens a door toward facile fabrication of tube-like or single-crystalline mesoporous nanomaterials via anisotropic etching route.

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45

Kafle, Bishal, Ahmed Ridoy, Eleni Miethig, Laurent Clochard, Edward Duffy, Marc Hofmann, and Jochen Rentsch. "On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas." Nanomaterials 10, no. 11 (November 6, 2020): 2214. http://dx.doi.org/10.3390/nano10112214.

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In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufacturing etching platform such as silicon photovoltaics. Specifically, the current study focuses on developing an effective front-side texturing process on Si(100) wafers. Statistical variation of the tool parameters is performed to achieve high etching rates and low surface reflection of the textured silicon surface. It is observed that the rate and anisotropy of the etching process are strongly defined by the interaction effects between process parameters such as substrate temperature, F2 concentration, and process duration. The etching forms features of sub-micron dimensions on c-Si surface. By maintaining the anisotropic nature of etching, weighted surface reflection (Rw) as low as Rw < 2% in Si(100) is achievable. The lowering of Rw is mainly due to the formation of deep, density grade nanostructures, so-called black silicon, with lateral dimensions that are smaller to the major wavelength ranges of interest in silicon photovoltaics.

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46

Li, Xiaochan, Wenliang Wang, Yulin Zheng, Yuan Li, Liegen Huang, Zhiting Lin, Yuefeng Yu, and Guoqiang Li. "Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films." CrystEngComm 20, no. 9 (2018): 1198–204. http://dx.doi.org/10.1039/c7ce02121f.

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47

Hotz, Stephan, Rami Haidar, Sven Lamprecht, and Norbert Luetzow. "CupraEtch DE - Recyclable Anisotropic Etch: Differential Etch for SAP Manufacturing." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (January 1, 2014): 001622–42. http://dx.doi.org/10.4071/2014dpc-wp23.

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The demand for ever finer circuitry especially for IC-substrate manufacturing has lead the way from the traditional subtractive circuit formation to additive, semi-additive, and modified semi-additive technology. Fully additive processing remains a niche technology, while semi-additive (SAP) and especially modified semi-additive processing (mSAP) are already widely used in the IC-substrate manufacturing business. Both SAP and mSAP require a copper seed layer in order to be able to pattern plate the desired circuitry. In SAP this seed layer consists only of a layer of electroless copper, with a thickness ranging from 0,3 μm to 1,5 μm depending on the design and manufacturer. Therefore after pattern plating and resist stripping only the thin electroless copper seed layer needs to be removed for circuit formation. Considering mSAP several different variations exist. In some cases the seed layer consists only of sputtered copper, in others it is a layer of electroless copper with strike copper plating as protective layer, and in other cases half-etched copper panels are being used. Depending on which type of mSAP was applied the seed layer thickness can be in the nanometer range but also up to 10 μm. Nevertheless for both SAP and mSAP the copper seed layer has to be removed through etching to finalize the circuit formation. Typical etching solutions contain sulfuric acid and hydrogen peroxide in addition to organic stabilizers and banking agents. Two draw-backs have been observed with peroxide based etchants; firstly the solution requires feed and bleed operation to maintain the maximal copper content and to replenish spent oxidizer, and secondly peroxide based etchants etch three-dimensionally with the same etching speed no mater if sprayed or in immersion. The first draw back has economical as well as ecological effects, since considerable amounts of chemical waste is being generated and thereby requires waste treatment. The second drawback has functional effects, since the three-dimensional etching causes undercut of the conductor tracks of several micrometers, thereby affecting the mechanical stability of the track as well as the electrical properties (i.e. impedance control). In order to prevent these two draw-backs of the typical peroxide based etchants a different etchant system has been developed. The novel etchant is based on ferric sulfate and thereby offers the possibility to regenerate the solution in bypass equipment, therefore eliminating the need for feed and bleed operation. Furthermore, besides regenerating the oxidizer pure copper is plated, which could either be re-used internally or sold to recyclers. In addition this ferric sulfate based etchant causes minute to none undercut eliminating the second draw back of peroxide based etchants. This paper describes the newly developed ferric sulfate based etchant. The focus will be on the etch performance in comparison to hydrogen peroxide etchants. In addition regeneration equipment suitable for this application will be illustrated and discussed, especially under economical and ecological aspects.

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Parvulescu, Catalin, Elena Manea, Paul Schiopu, and Raluca Gavrila. "Fabrication of Micro-Lens Array Obtained by Anisotropic Wet Etching of Silicon." Defect and Diffusion Forum 369 (July 2016): 71–76. http://dx.doi.org/10.4028/www.scientific.net/ddf.369.71.

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This paper presents the fabrication of a micro-lens array surface with a single-mask process and two etching steps with KOH water solution. Numerical analysis of optics was used to determine the optimal design parameters such as curvature sagitta and radius. The dimension of each lens is 20μm x 20μm. We used anisotropic etching of <100> silicon through a circular and squar mask to produce a pyramidal pit formed by four (111) planes. The oxide mask is stripped and the immersion of the sample in the etchant solution favors the etching of (411) plane transforming the pit into a smooth hemispherical cavity. An intermediate stage exists when a wider 19.470 <411> - face pyramid replaces the initial 54.740 inverted pyramid. The dependence of surface roughness on concentration and temperature of KOH is investigated in the range of 25%-40% and 60°C-80°C, respectively, and compared between them. The surface profiles and roughness was characterized by AFM. The etching depth and radius of micro-lens array was obtained from the SEM images and AFM data. Also, the array of concave depressions was directly used as a mould for replication of KER-2500 transparent polymeric silicon from Shin-Etsu with a refractive index n=1.41. The perfectly matched array of micro-lenses can be detached from substrate and used as a local solar concentrator. Optical properties such as the focal length of the plano-convex micro-lens array, obtained by replication, are measured and analyzed.

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Ishii, Yohei, Ritchie Scott-McCabe, Alex Yu, Kazumasa Okuma, Kenji Maeda, Joseph Sebastian, and Jim Manos. "Anisotropic selective etching between SiGe and Si." Japanese Journal of Applied Physics 57, no. 6S2 (May 22, 2018): 06JC04. http://dx.doi.org/10.7567/jjap.57.06jc04.

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Kim, Doo San, Ju Eun Kim, You Jung Gill, Yun Jong Jang, Ye Eun Kim, Kyong Nam Kim, Geun Young Yeom, and Dong Woo Kim. "Anisotropic/Isotropic Atomic Layer Etching of Metals." Applied Science and Convergence Technology 29, no. 3 (May 31, 2020): 41–49. http://dx.doi.org/10.5757/asct.2020.29.3.041.

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