Relevant bibliographies by topics / Anisotropic wet etching

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Anisotropic wet etching'

Author: Grafiati
Published: 4 June 2021
Last updated: 19 February 2022

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Journal articles on the topic "Anisotropic wet etching"

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Lamichhane, Shobha Kanta. "Experimental investigation on anisotropic surface properties of crystalline silicon." BIBECHANA 8 (January 15, 2012): 59–66. http://dx.doi.org/10.3126/bibechana.v8i0.4828.

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Anisotropic etching of silicon has been studied by wet potassium hydroxide (KOH) etchant with its variation of temperature and concentration. Results presented here are temperature dependent etch rate along the crystallographic orientations. The etching rate of the (111) surface family is of prime importance for microfabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of (111) remains unclear. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study demonstrate that the contribution of microscopic activation energy that effectively controls the etching process. Such a strong anisotropy in KOH allows us a precious control of lateral dimensions of the silicon microstructure.Keywords: microfabrication; activation energy; concentration; anisotropy; crystal planeDOI: http://dx.doi.org/10.3126/bibechana.v8i0.4828 BIBECHANA 8 (2012) 59-66
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Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Simple Microcantilever Release Process of Silicon Piezoresistive Microcantilever Sensor Using Wet Etching." Applied Mechanics and Materials 660 (October 2014): 894–98. http://dx.doi.org/10.4028/www.scientific.net/amm.660.894.

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In this paper, a simple microcantilever release process using anisotropic wet etching is presented. The microcantilever release is conducted at the final stage of the fabrication of piezoresistive microcantilever sensor. Issues related to microcantilever release such as microscopic roughness and macroscopic roughness has been resolved using simple technique. By utilizing silicon oxide (SiO2) as the etch stop for the wet etching process, issues related to microscopic roughness can be eliminated. On the other hand, proper etching procedure with constant stirring of the etchant solution of KOH anisotropic etching significantly reduces the notching effect contributed by the macroscopic roughness. Upon the completion of microcantilever release, suspended microcantilever of 2μm thick is realized with the removal of SiO2layer using Buffered Oxide Etching (BOE).
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Shikida, Mitsuhiro. "Anisotropic Wet Etching for Micro-Fabrication." IEEJ Transactions on Sensors and Micromachines 128, no. 9 (2008): 341–46. http://dx.doi.org/10.1541/ieejsmas.128.341.

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Che, Woo Seong, Chang Gil Suk, Tae Gyu Park, Jun Tae Kim, and Jun Hyub Park. "The Improvement of Wet Anisotropic Etching with Megasonic Wave." Key Engineering Materials 297-300 (November 2005): 557–61. http://dx.doi.org/10.4028/www.scientific.net/kem.297-300.557.

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A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as the etch rate, etch uniformity, surface roughness. The etching uniformity was less than ±1% on the whole wafer. The initial root-mean-squre roughness(Rrms) of single crystal silicon is 0.23nm [1]. It has been reported that the roughnesses with magnetic stirring and ultrasonic agitation were 566nm and 66nm [3]. But with megasonic irradiation, the Rrms of 1.7nm was achieved for the surface of 37µm depth. Wet etching of silicon with megasonic irradiation can maintain nearly the original surface roughness during etching. The results have verified that the megasonic irradiation is an effective way to improve the etching characteristics - the etch rate, etch uniformity and surface roughness.
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Kashkoush, Ismail, Jennifer Rieker, Gim Chen, and Dennis Nemeth. "Process Control Challenges of Wet Etching Large MEMS Si Cavities." Solid State Phenomena 219 (September 2014): 73–77. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.73.

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Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants like aqueous KOH, TMAH and other hydroxides like NaOH. With the strong dependence of the etch rate on crystal orientation and on etchant concentration and temperature, a large variety of silicon structures can be fabricated in a highly controllable and reproducible manner. Hence, anisotropic etching of <100> silicon has been a key process in common MEMS based technologies for realizing 3-D structures [1-4]. These structures include V-grooves for transistors, small holes for ink jets and diaphragms for MEMS pressure sensors as shown in Figure 1 [1]. The actual reaction mechanism has not been well understood and comprehensive physical and chemical models for the process have not yet been developed. With increasing numbers of MEMS applications, interest has grown in recent years for process modelling, simulation and software tools useful for the prediction of etched surface profiles [4-6].
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YAO Ming-qiu, 姚明秋, 唐. 彬. TANG Bin, and 苏. 伟. SU Wei. "Morphologic control of wet anisotropic silicon etching." Optics and Precision Engineering 24, no. 2 (2016): 350–57. http://dx.doi.org/10.3788/ope.20162402.0350.

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Iosub, Rodica, Carmen Moldovan, and M. Modreanu. "Silicon membranes fabrication by wet anisotropic etching." Sensors and Actuators A: Physical 99, no. 1-2 (2002): 104–11. http://dx.doi.org/10.1016/s0924-4247(01)00906-2.

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Haneveld, Jeroen, Henri Jansen, Erwin Berenschot, Niels Tas, and Miko Elwenspoek. "Wet anisotropic etching for fluidic 1D nanochannels." Journal of Micromechanics and Microengineering 13, no. 4 (2003): S62—S66. http://dx.doi.org/10.1088/0960-1317/13/4/310.

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Wang, C. M., Y. C. Chang, C. D. Sung, H. T. Tien, C. C. Lee, and J. Y. Chang. "Anisotropic wet etching on birefringent calcite crystal." Applied Physics A 81, no. 4 (2005): 851–54. http://dx.doi.org/10.1007/s00339-004-2875-8.

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Shang, Zheng Guo, Zhi Yu Wen, Dong Ling Li, and Sheng Qiang Wang. "Application of KOH Anisotropic Etching in the Fabrication of MEMS Devices." Key Engineering Materials 483 (June 2011): 62–65. http://dx.doi.org/10.4028/www.scientific.net/kem.483.62.

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It is known that the wet chemical etching of silicon in alkaline solution has attracted wide attention due to its advantages such as lower cost, simpler setup, higher rate, smoother surface at micro level, higher degree of anisotropy, and lower pollution. In this paper, the key processes of fabricating vacuum microelectronic accelerometer and slits are presented. The cone curvature radius of the silicon tip arrays less than 30nm was fabricated with wet anisotropic etching of silicon in 33wt. % KOH solution at 70°C added potassium iodine (KI) and Iodine (I2) as additive and the cone aspect ratio was about 0.7. Smooth surface after etching in 33wt. %KOH solution added isopropyl alcohol (IPA) at 80°C was obtained and lateral etching was less than 5um after etching several hours for etching depth over 400um. Scalar slits with bottom width 25um and depth 500um were attained. A constant etch rate lead to precise and reproducible production. The test result reveals that the process to a specific occasion can reach practical requirements.
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Dissertations / Theses on the topic "Anisotropic wet etching"

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Dave, Neha H. (Neha Hemang). "Removal of metal oxide defects through improved semi-anisotropic wet etching process." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/78167.

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Thesis (M. Eng. in Manufacturing)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2012.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 52).<br>Data recently collected from an industrial thin film manufacturer indicate that almost 8% of devices are rejected due to excess metal, or unwanted metal on the device surface. Experimentation and analysis suggest that almost half of these defects are caused by incomplete removal of nickel oxides that form on top of the conductive nickel surface throughout the heated environment of the upstream process. This study classified and identified the composition of these excess metal defects, evaluated recommended wet etch methods to remove nickel oxide, and finally proposes a wet etch process that will rapidly remove defects while continuing to maintain the desired semi-anisotropic etch profile, uncharacteristic of most wet immersion etch processes. Results attested that rapid exposure to dilute (40%) nitric acid followed by immediate immersion into a cleaning agent, proprietary nickel etchant, and titanium tungsten etchant removed all nickel oxide defects. Upon implementation, this method has the potential to reduce scrap due to excess metal by 3% and reduce overall etch process time by 25%. In addition, a process was developed to completely etch patterned substrates with high defect density mid process and rework them from raw substrates.<br>by Neha H. Dave.<br>M.Eng.in Manufacturing
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Pal, P., K. Sato, M. A. Gosalvez, M. Shikida, and 一雄 佐藤. "An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask." IEEE, 2008. http://hdl.handle.net/2237/11137.

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Ghalichechian, Nima. "Integration of benzocyclobutene polymers and silicon micromachined structures fabricated with anisotropic wet etching." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2361.

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Thesis (M.S.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Dept. of Electrical and Computer Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Pal, Prem, Kazuo Sato, Miguel A. Gosalvez, and Mitsuhiro Shikida. "Novel Wet Anisotropic Etching Process for the Realization of New Shapes of Silicon MEMS Structures." IEEE, 2007. http://hdl.handle.net/2237/9437.

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Yildirim, Alper. "Development Of A Micro-fabrication Process Simulator For Micro-electro-mechanical-systems(mems)." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606850/index.pdf.

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ABSTRACT DEVELOPMENT OF A MICRO-FABRICATION PROCESS SIMULATOR FOR MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) Yildirim, Alper M.S, Department of Mechanical Engineering Supervisor: Asst. Prof. Dr. Melik D&ouml<br>len December 2005, 140 pages The aim of this study is to devise a computer simulation tool, which will speed-up the design of Micro-Electro-Mechanical Systems by providing the results of the micro-fabrication processes in advance. Anisotropic etching along with isotropic etching of silicon wafers are to be simulated in this environment. Similarly, additive processes like doping and material deposition could be simulated by means of a Cellular Automata based algorithm along with the use of OpenGL library functions. Equipped with an integrated mask design editor, complex mask patterns can be created by the software and the results are displayed by the Cellular Automata cells based on their spatial location and plane. The resultant etched shapes are in agreement with the experimental results both qualitatively and quantitatively. Keywords: Wet Etching, Anisotropic Etching, Doping, Cellular Automata, Micro-fabrication simulation, Material Deposition, Isotropic Etching, Dry Etching, Deep Reactive Ion Etching
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Yasinok, Gozde Ceren. "Development Of Electrochemical Etch-stop Techniques For Integrated Mems Sensors." Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/12607538/index.pdf.

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This thesis presents the development of electrochemical etch-stop techniques (ECES) to achieve high precision 3-dimensional integrated MEMS sensors with wet anisotropic etching by applying proper voltages to various regions in silicon. The anisotropic etchant is selected as tetra methyl ammonium hydroxide, TMAH, considering its high silicon etch rate, selectivity towards SiO2, and CMOS compatibility, especially during front-side etching of the chip/wafer. A number of parameters affecting the etching are investigated, including the effect of temperature, illumination, and concentration of the etchant over the etch rate of silicon, surface roughness, and biasing voltages. The biasing voltages for passivating the n-well and enhancing the etching reactions on p-substrate are determined as -0.5V and -1.6V, respectively, after a series of current-voltage characteristic experiments. The surface roughness due to TMAH etching is prevented with the addition of ammonium peroxodisulfate, AP. A proper etching process is achieved using a 10wt.% TMAH at 85&deg<br>C with 10gr/lt. AP. Different silicon etch samples are produced in METU-MET facilities to understand and optimize ECES parameters that can be used for CMOS microbolometers. The etch samples are fabricated using various processes, including thermal oxidation, boron and phosphorus diffusions, aluminum and silicon nitride layer deposition processes. Etching with the prepared samples shows the dependency of the depletion layer between p-substrate and n&amp<br>#8209<br>well, explaining the reason of the previous failures during post-CMOS etching of CMOS microbolometers from the front side. Succesfully etched CMOS microbolometers are achieved with back side etching in 6M KOH at 90 &deg<br>C, where &amp<br>#8209<br>3.5V and 1.5V are applied to the p-substrate and n-well. In summary, this study provides an extensive understanding of the ECES process for successful implementations of integrated MEMS sensors.
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Krátký, Stanislav. "Technologie leptání křemíku." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2012. http://www.nusl.cz/ntk/nusl-219382.

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This thesis deals with the silicon etching technology. It Examines using of water solution of potassium hydroxide. It focuses on plasma etching of silicon using mixture of CF4 and O2 as the dry way of etching. Important parameters of etching like etching rate of silicon and masking materials, etching selectivity, surface roughness and underetching of mask are determined for both ways. Some additional processes has been examined as well, namely creating of mask of resist and silicon dioxide, lithography process and etching of resist using oxygen plasma.
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Metelka, Ondřej. "Charakterizace struktur připravených selektivním mokrým leptáním křemíku." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2014. http://www.nusl.cz/ntk/nusl-231496.

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The task of master’s thesis was to perform optimalization process for preparing metal etching mask by electron beam litography and subsequent selective wet ething of silicon with crystalographic orientation (100). Further characterization of etched surface and fabricated structures was performed. In particular, attention was given to the morphology demonstrated by scanning electron microscopy and study changes of the optical properties of gold plasmonic antennas due to their undercut.
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Hsieh, Chia-Ming, and 謝嘉銘. "Study and Application of TMAH Anisotropic Wet Etching." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/81718552117093274366.

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碩士<br>國立臺灣大學<br>機械工程學研究所<br>88<br>Anisotropic wet etching is one of the key technologies for the microstructure fabrication in Micro Electro Mechanical Systems (MEMS). The most commonly used etchants are potassium hydroxide water solution (KOH), ethylenediamine-pyrocatechol-water (EDP), and hydrazine-water solution. EDP and hydrazine-water solution handling are dangerous because of the high toxicity and instability. Aqueous KOH solutions are the most widely used due to low toxicity and good surface roughness, but the compatibility with the CMOS processes is not good enough due to the mobile potassium ion contamination. In recent years, a special anisotropic etchant, tetramethylammonium hydroxide (TMAH, (CH3)4NOH)) has been proposed and is fulfils CMOS-compatibility requirements and non-toxic. The present study aims to investigate the etching rate varies vs. the etchant’s temperature and concentration. The effects of passivation silicon oxide and surface roughness have also received very little attention. In our work, we choose three variables: (i) TMAH solution concentration by weight (2~25%), (ii) TMAH solution temperature (70~90°C), and (iii) the silicon substrate type (n- and p-type silicon wafers) to monitor the TMAH etching rate, the selectivity of Si/SiO2, and the surface roughness. In our study, the most fast etching rate is 81 m/hr, which appears at 90°C and 8 wt.% TMAH solution. We also find the selectivity of Si/SiO2 will much higher than KOH solutions at lower temperature in our study. At lower concentration (2~5 wt.%) will result the hillocks of the surface, but these will disappear at higher concentration (15~25 wt.%). Finally, the pre-alignment is also conducted. Such pre-etching patterns allow us to determine the <100> crystal orientation within accuracy of 0.05° and can be used as valuable reference for all subsequent mask patterns.
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Stateikina, Irina. "Mechanism of wet anisotropic etching of silicon for nano-scale applications." Thesis, 2007. http://spectrum.library.concordia.ca/975298/1/NR30139.pdf.

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The fabrication processes of recent MEMS devices require the use of anisotropic etching and variety of concave structures. Analysis of these structures uncovered phenomenon in the etch rates of surfaces exposed by anisotropic etchant. This phenomenon could not be explained without consideration of the composition of these surfaces on atomic level. My study raised the step-based modeling of these planes, their relative interactions, and dependence on the etching environment. Control of this environment and better understanding of the different factors that influence the etch rates of these surfaces is the main theme of my work. To help with the analysis of the studied surfaces a set of the experiments was done using a wagon-wheel pattern that provided the necessary assortment of concave structures for the purpose of this research. A mathematical model was built to help understand the processes that are responsible for anomalies in the etch rates and profiles of surfaces exposed on sidewalls of spokes in the wagon-wheel experiment. Detailed examination of the profiles of the surfaces and their relative location within the same concave structure suggested the possibility of application of these surfaces in creation of different patterns for nano-applications. The major concern is the control of etch rates of these planes in order to achieve the necessary precision for the application on such scale. Light illumination of the etched surfaces is analyzed as a possible component in providing the necessary level of control. Influence of the light intensity and different wavelengths is studied with the thought of application of the respective parameters in order to achieve a satisfactory control over the etch rates of illuminated surfaces.
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Book chapters on the topic "Anisotropic wet etching"

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Che, Woo Seong, Chang Gil Suk, Tae Gyu Park, Jun Tae Kim, and Jun Hyub Park. "The Improvement of Wet Anisotropic Etching with Megasonic Wave." In Key Engineering Materials. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-978-4.557.

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Sheu, J. T., H. T. Chou, W. L. Cheng, C. H. Wu, and L. S. Yeou. "Silicon Nanomachining by Scanning Probe Lithography and Anisotropic Wet Etching." In Microsystems. Springer US, 2002. http://dx.doi.org/10.1007/978-1-4757-5791-0_8.

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Kutchoukov, V. G., M. Shikida, M. Bao, J. R. Mollinger, and A. Bossche. "Forming a Rounded Convex Corner by Using Two-Step Anisotropic KOH Wet Etching." In Sensor Technology 2001. Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0840-2_28.

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"Anisotropic Wet Etching." In Introduction to Microfabrication. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9781119990413.ch20.

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"KOH-Based Anisotropic Etching." In Silicon Wet Bulk Micromachining for MEMS. Jenny Stanford Publishing, 2017. http://dx.doi.org/10.1201/9781315364926-4.

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"TMAH-Based Anisotropic Etching." In Silicon Wet Bulk Micromachining for MEMS. Jenny Stanford Publishing, 2017. http://dx.doi.org/10.1201/9781315364926-5.

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Tang, Bin, and Kazuo Sato. "Advanced Surfactant-Modified Wet Anisotropic Etching." In Microelectromechanical Systems and Devices. InTech, 2012. http://dx.doi.org/10.5772/26901.

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Conference papers on the topic "Anisotropic wet etching"

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Zhang, Hui, Yan Xing, Jin Zhang, and Yuan Li. "The microscopic activation energy etching mechanism in anisotropic wet etching of quartz." In 2018 IEEE Micro Electro Mechanical Systems (MEMS). IEEE, 2018. http://dx.doi.org/10.1109/memsys.2018.8346591.

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Inagaki, N., H. Sasaki, M. Shikida, and K. Sato. "Selective removal of micro-corrugation by anisotropic wet etching." In TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2009. http://dx.doi.org/10.1109/sensor.2009.5285710.

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van Suchtelen, J., K. Sato, E. van Veenendaal, et al. "Simulation of anisotropic wet-chemical etching using a physical model." In Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291). IEEE, 1999. http://dx.doi.org/10.1109/memsys.1999.746850.

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Lyubarskaya, Anna V., Yury A. Chaplygin, Alexander A. Golishnikov, and Oleg V. Pankratov. "Study of Anisotropic Wet Chemical Etching for Silicon Microneedles Fabrication." In 2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus). IEEE, 2021. http://dx.doi.org/10.1109/elconrus51938.2021.9396527.

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Yuan, Mingquan, Kan Yu, and Xiaomei Yu. "Study on compensation method for vertical trench using anisotropic wet etching." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667525.

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Sun, Fei, and Zhiping Zhou. "Anisotropic Wet Etching in Application of SOI-based Nano-Optoelectronic Devices." In 2007 International Nano-Optoelectronics Workshop. IEEE, 2007. http://dx.doi.org/10.1109/inow.2007.4302910.

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Chapman, Glenn H., Yuqiang Tu, and Jun Peng. "Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO 2 plasma etching." In Micromachining and Microfabrication, edited by Mary A. Maher and Jerome F. Jakubczak. SPIE, 2004. http://dx.doi.org/10.1117/12.524690.

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Jovic, V., J. Lamovec, M. M. Smiljanic, and M. Popovic. "Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon." In 2010 27th International Conference on Microelectronics (MIEL 2010). IEEE, 2010. http://dx.doi.org/10.1109/miel.2010.5490489.

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Zhang, J., M. Si, X. B. Lou, W. Wu, R. G. Gordon, and P. D. Ye. "InGaAs 3D MOSFETs with drastically different shapes formed by anisotropic wet etching." In 2015 IEEE International Electron Devices Meeting (IEDM). IEEE, 2015. http://dx.doi.org/10.1109/iedm.2015.7409702.

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Chen, Feiyan, Guoqing Hu, and Baihai Wu. "An Experimental Study of TMAH Etching Silicon for MEMS." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21292.

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In the process of Micro-Electrical-Mechanical System (MEMS), the anisotropic wet chemical etching rate of the silicon wafer is very important for fabricating MEMS to determine the fabricating method, processing and etching time. The etching rates of the silicon wafer in the TMAH solution with the different temperature are obtained in this paper. The micro-fabrication technology and micro-fabrication process are also discussed. In the same time, all experimental data are put forward in details.
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