Log in

Relevant bibliographies by topics / Anisotropic wet etching / Journal articles

To see the other types of publications on this topic, follow the link: Anisotropic wet etching.

Journal articles on the topic 'Anisotropic wet etching'

Author: Grafiati

Published: 4 June 2021

Last updated: 19 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Anisotropic wet etching.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Lamichhane, Shobha Kanta. "Experimental investigation on anisotropic surface properties of crystalline silicon." BIBECHANA 8 (January 15, 2012): 59–66. http://dx.doi.org/10.3126/bibechana.v8i0.4828.

Full text

Abstract:

Anisotropic etching of silicon has been studied by wet potassium hydroxide (KOH) etchant with its variation of temperature and concentration. Results presented here are temperature dependent etch rate along the crystallographic orientations. The etching rate of the (111) surface family is of prime importance for microfabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of (111) remains unclear. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study demonstrate that the contribution of microscopic activation energy that effectively controls the etching process. Such a strong anisotropy in KOH allows us a precious control of lateral dimensions of the silicon microstructure.Keywords: microfabrication; activation energy; concentration; anisotropy; crystal planeDOI: http://dx.doi.org/10.3126/bibechana.v8i0.4828 BIBECHANA 8 (2012) 59-66

APA, Harvard, Vancouver, ISO, and other styles

2

Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Simple Microcantilever Release Process of Silicon Piezoresistive Microcantilever Sensor Using Wet Etching." Applied Mechanics and Materials 660 (October 2014): 894–98. http://dx.doi.org/10.4028/www.scientific.net/amm.660.894.

Full text

Abstract:

In this paper, a simple microcantilever release process using anisotropic wet etching is presented. The microcantilever release is conducted at the final stage of the fabrication of piezoresistive microcantilever sensor. Issues related to microcantilever release such as microscopic roughness and macroscopic roughness has been resolved using simple technique. By utilizing silicon oxide (SiO2) as the etch stop for the wet etching process, issues related to microscopic roughness can be eliminated. On the other hand, proper etching procedure with constant stirring of the etchant solution of KOH anisotropic etching significantly reduces the notching effect contributed by the macroscopic roughness. Upon the completion of microcantilever release, suspended microcantilever of 2μm thick is realized with the removal of SiO2layer using Buffered Oxide Etching (BOE).

APA, Harvard, Vancouver, ISO, and other styles

3

Shikida, Mitsuhiro. "Anisotropic Wet Etching for Micro-Fabrication." IEEJ Transactions on Sensors and Micromachines 128, no. 9 (2008): 341–46. http://dx.doi.org/10.1541/ieejsmas.128.341.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Che, Woo Seong, Chang Gil Suk, Tae Gyu Park, Jun Tae Kim, and Jun Hyub Park. "The Improvement of Wet Anisotropic Etching with Megasonic Wave." Key Engineering Materials 297-300 (November 2005): 557–61. http://dx.doi.org/10.4028/www.scientific.net/kem.297-300.557.

Full text

Abstract:

A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as the etch rate, etch uniformity, surface roughness. The etching uniformity was less than ±1% on the whole wafer. The initial root-mean-squre roughness(Rrms) of single crystal silicon is 0.23nm [1]. It has been reported that the roughnesses with magnetic stirring and ultrasonic agitation were 566nm and 66nm [3]. But with megasonic irradiation, the Rrms of 1.7nm was achieved for the surface of 37µm depth. Wet etching of silicon with megasonic irradiation can maintain nearly the original surface roughness during etching. The results have verified that the megasonic irradiation is an effective way to improve the etching characteristics - the etch rate, etch uniformity and surface roughness.

APA, Harvard, Vancouver, ISO, and other styles

5

Kashkoush, Ismail, Jennifer Rieker, Gim Chen, and Dennis Nemeth. "Process Control Challenges of Wet Etching Large MEMS Si Cavities." Solid State Phenomena 219 (September 2014): 73–77. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.73.

Full text

Abstract:

Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants like aqueous KOH, TMAH and other hydroxides like NaOH. With the strong dependence of the etch rate on crystal orientation and on etchant concentration and temperature, a large variety of silicon structures can be fabricated in a highly controllable and reproducible manner. Hence, anisotropic etching of <100> silicon has been a key process in common MEMS based technologies for realizing 3-D structures [1-4]. These structures include V-grooves for transistors, small holes for ink jets and diaphragms for MEMS pressure sensors as shown in Figure 1 [1]. The actual reaction mechanism has not been well understood and comprehensive physical and chemical models for the process have not yet been developed. With increasing numbers of MEMS applications, interest has grown in recent years for process modelling, simulation and software tools useful for the prediction of etched surface profiles [4-6].

APA, Harvard, Vancouver, ISO, and other styles

6

YAO Ming-qiu, 姚明秋, 唐. 彬. TANG Bin, and 苏. 伟. SU Wei. "Morphologic control of wet anisotropic silicon etching." Optics and Precision Engineering 24, no. 2 (2016): 350–57. http://dx.doi.org/10.3788/ope.20162402.0350.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Iosub, Rodica, Carmen Moldovan, and M. Modreanu. "Silicon membranes fabrication by wet anisotropic etching." Sensors and Actuators A: Physical 99, no. 1-2 (2002): 104–11. http://dx.doi.org/10.1016/s0924-4247(01)00906-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Haneveld, Jeroen, Henri Jansen, Erwin Berenschot, Niels Tas, and Miko Elwenspoek. "Wet anisotropic etching for fluidic 1D nanochannels." Journal of Micromechanics and Microengineering 13, no. 4 (2003): S62—S66. http://dx.doi.org/10.1088/0960-1317/13/4/310.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Wang, C. M., Y. C. Chang, C. D. Sung, H. T. Tien, C. C. Lee, and J. Y. Chang. "Anisotropic wet etching on birefringent calcite crystal." Applied Physics A 81, no. 4 (2005): 851–54. http://dx.doi.org/10.1007/s00339-004-2875-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Shang, Zheng Guo, Zhi Yu Wen, Dong Ling Li, and Sheng Qiang Wang. "Application of KOH Anisotropic Etching in the Fabrication of MEMS Devices." Key Engineering Materials 483 (June 2011): 62–65. http://dx.doi.org/10.4028/www.scientific.net/kem.483.62.

Full text

Abstract:

It is known that the wet chemical etching of silicon in alkaline solution has attracted wide attention due to its advantages such as lower cost, simpler setup, higher rate, smoother surface at micro level, higher degree of anisotropy, and lower pollution. In this paper, the key processes of fabricating vacuum microelectronic accelerometer and slits are presented. The cone curvature radius of the silicon tip arrays less than 30nm was fabricated with wet anisotropic etching of silicon in 33wt. % KOH solution at 70°C added potassium iodine (KI) and Iodine (I2) as additive and the cone aspect ratio was about 0.7. Smooth surface after etching in 33wt. %KOH solution added isopropyl alcohol (IPA) at 80°C was obtained and lateral etching was less than 5um after etching several hours for etching depth over 400um. Scalar slits with bottom width 25um and depth 500um were attained. A constant etch rate lead to precise and reproducible production. The test result reveals that the process to a specific occasion can reach practical requirements.

APA, Harvard, Vancouver, ISO, and other styles

11

Radjenovic, Branislav, and Marija Radmilovic-Radjenovic. "Level set simulations of the anisotropic wet etching process for device fabrication in nanotechnologies." Chemical Industry 64, no. 2 (2010): 93–97. http://dx.doi.org/10.2298/hemind100205008r.

Full text

Abstract:

Chemical etching is employed as micromachining manufacturing process to produce micron-size components. As a semiconductor wafer is extremely expensive due to many processing steps involved in the making thereof, the need to critically control the etching end point in an etching process is highly desirable. It was found that not only the etchant and temperature determine the exact anisotropy of etched silicon. The angle between the silicon surface and the mask was also shown to play an important role. In this paper, angular dependence of the etching rate is calculated on the base of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal <100>, <110>, <111> directions in KOH solutions. The calculations are performed using an extension of the sparse field method for solving three dimensional (3D) level set equations that describe the morphological surface evolution during etching process. The analysis of the obtained results confirm that regardless of the initial shape the profile evolution ends with the crystal form composed of the fastest etching planes, {110} in our model.

APA, Harvard, Vancouver, ISO, and other styles

12

Hara, Tohru, Takeshi Hirayama, Hirofumi Ando, and Masakazu Furukawa. "Anisotropic Wet Etching of Aluminum Electrodes by an Evacuated Etching System." Journal of The Electrochemical Society 132, no. 12 (1985): 2973–75. http://dx.doi.org/10.1149/1.2113705.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Pacco, Antoine, Zainul Aabdin, Utkarsh Anand, Jens Rip, Utkur Mirsaidov, and Frank Holsteyns. "Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions." Solid State Phenomena 282 (August 2018): 88–93. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.88.

Full text

Abstract:

A qualitative and semi quantitative analysis of anisotropic etching of silicon nanostructures in alkaline solutions was done. Dedicated nanostructures were fabricated on 300mm wafers and their geometric change during wet etching was analyzed, stepwise, by top down SEM or TEM. We challenge the previously described wagon wheel technique towards nanodimensions and describe the pros and cons of the technique using relevant experimental conditions. The formation of specific geometric patterns are explained by the face-specificity of the etch rates. Clear differences in anisotropy were revealed between pillars etched in KOH or in TMAH, and for wagon wheels etched in TMAH or in NH4OH. Finally etch rates were extracted for the different types of crystal planes and compared.

APA, Harvard, Vancouver, ISO, and other styles

14

Ma, Qing, Derrick C. Mancini, and Richard A. Rosenberg. "Synchrotron-radiation-induced anisotropic wet etching of GaAs." Applied Physics Letters 75, no. 15 (1999): 2274–76. http://dx.doi.org/10.1063/1.124988.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Normand, P., K. Beltsios, A. Tserepi, K. Aidinis, D. Tsoukalas, and C. Cardinaud. "A Masking Approach for Anisotropic Silicon Wet Etching." Electrochemical and Solid-State Letters 4, no. 10 (2001): G73. http://dx.doi.org/10.1149/1.1398559.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Chang, Yu-Chi, Hao-Ting Tien, Chung-Dau Sung, Chien-Chieh Lee, Chih-Ming Wang, and Jenq-Yang Chang. "Micropolarizer fabricated from CaCO_3 by anisotropic wet etching." Applied Optics 42, no. 22 (2003): 4423. http://dx.doi.org/10.1364/ao.42.004423.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

AGARWAL, AJAY, X. L. ZHANG, T. GAN, and J. SINGH. "THIN SILICON STRUCTURES FABRICATION BY WET ANISOTROPIC ETCHING." International Journal of Computational Engineering Science 04, no. 02 (2003): 311–14. http://dx.doi.org/10.1142/s1465876303001150.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Li, Xiaochan, Wenliang Wang, Yulin Zheng, et al. "Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films." CrystEngComm 20, no. 9 (2018): 1198–204. http://dx.doi.org/10.1039/c7ce02121f.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Parvulescu, Catalin, Elena Manea, Paul Schiopu, and Raluca Gavrila. "Fabrication of Micro-Lens Array Obtained by Anisotropic Wet Etching of Silicon." Defect and Diffusion Forum 369 (July 2016): 71–76. http://dx.doi.org/10.4028/www.scientific.net/ddf.369.71.

Full text

Abstract:

This paper presents the fabrication of a micro-lens array surface with a single-mask process and two etching steps with KOH water solution. Numerical analysis of optics was used to determine the optimal design parameters such as curvature sagitta and radius. The dimension of each lens is 20μm x 20μm. We used anisotropic etching of <100> silicon through a circular and squar mask to produce a pyramidal pit formed by four (111) planes. The oxide mask is stripped and the immersion of the sample in the etchant solution favors the etching of (411) plane transforming the pit into a smooth hemispherical cavity. An intermediate stage exists when a wider 19.470 <411> - face pyramid replaces the initial 54.740 inverted pyramid. The dependence of surface roughness on concentration and temperature of KOH is investigated in the range of 25%-40% and 60°C-80°C, respectively, and compared between them. The surface profiles and roughness was characterized by AFM. The etching depth and radius of micro-lens array was obtained from the SEM images and AFM data. Also, the array of concave depressions was directly used as a mould for replication of KER-2500 transparent polymeric silicon from Shin-Etsu with a refractive index n=1.41. The perfectly matched array of micro-lenses can be detached from substrate and used as a local solar concentrator. Optical properties such as the focal length of the plano-convex micro-lens array, obtained by replication, are measured and analyzed.

APA, Harvard, Vancouver, ISO, and other styles

20

Walczak, Rafal, and Jan Dziuban. "Fast wet anisotropic etching of silicon utilizing microwave treatment of KOH etchant." Measurement Science and Technology 17, no. 1 (2005): 38–44. http://dx.doi.org/10.1088/0957-0233/17/1/008.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

CHOI, S. S., M. Y. JUNG, J. W. KIM, J. H. BOO, and J. S. YANG. "FABRICATION OF NEARFIELD OPTICAL PROBE ARRAY USING VARIOUS NANOFABRICATION PROCEDURES." International Journal of Nanoscience 02, no. 04n05 (2003): 283–91. http://dx.doi.org/10.1142/s0219581x03001309.

Full text

Abstract:

The nanosize silicon oxide aperture on the cantilever array has been successfully fabricated as nearfield optical probe. The various semiconductor processes were utilized for subwavelength size aperture fabrication. The anisotropic etching of the Si substrate by alkaline solutions followed by anisotropic crystal orientation dependent oxidation, anisotropic plasma etching, isotropic oxide etching was carried out. The 3 and 4 micron size dot array were patterned on the Si(100) wafer. After fabrication of the V-groove shape by anisotropic TMAH etching, the oxide growth at 1000° C was performed to have an oxide etch-mask. The oxide layer on the Si(111) plane have been utilized as an etch mask for plasma dry etching and water-diluted HF wet etching for nanosize aperture fabrication. The Au thin layer was deposited on the fabricated oxide nanosize aperture on the cantilever array. The 160 nm metal apertures on (5×1) cantilever array were successfully fabricated using electron beam evaporator.

APA, Harvard, Vancouver, ISO, and other styles

22

Radjenović, Branislav, Marija Radmilović-Radjenović, and Miodrag Mitrić. "Level Set Approach to Anisotropic Wet Etching of Silicon." Sensors 10, no. 5 (2010): 4950–67. http://dx.doi.org/10.3390/s100504950.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Zrir, M. A., M. Kakhia, and N. AlKafri. "Forming Si nanocrystals on insulator by wet anisotropic etching." Thin Solid Films 696 (February 2020): 137766. http://dx.doi.org/10.1016/j.tsf.2019.137766.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Sarajlic, Edin, Christophe Yamahata, and Hiroyuki Fujita. "Towards wet anisotropic silicon etching of perfect pyramidal pits." Microelectronic Engineering 84, no. 5-8 (2007): 1419–22. http://dx.doi.org/10.1016/j.mee.2007.01.250.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Xing, Yan, Zhiyue Guo, Miguel A. Gosálvez, Guorong Wu, and Xiaoli Qiu. "Characterization of anisotropic wet etching of single-crystal sapphire." Sensors and Actuators A: Physical 303 (March 2020): 111667. http://dx.doi.org/10.1016/j.sna.2019.111667.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Shimizu, Kazuhiro, Shunri Oda, and Masakiyo Matsumura. "Fabrication of Nanostructure by Anisotropic Wet Etching of Silicon." Japanese Journal of Applied Physics 27, Part 2, No. 9 (1988): L1778—L1779. http://dx.doi.org/10.1143/jjap.27.l1778.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Youtsey, C., I. Adesida, and G. Bulman. "Highly anisotropic photoenhanced wet etching of n-type GaN." Applied Physics Letters 71, no. 15 (1997): 2151–53. http://dx.doi.org/10.1063/1.119365.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Ohashi, Naoki, Kenji Takahashi, Shunichi Hishita, Isao Sakaguchi, Hiroshi Funakubo, and Hajime Haneda. "Fabrication of ZnO Microstructures by Anisotropic Wet-Chemical Etching." Journal of The Electrochemical Society 154, no. 2 (2007): D82. http://dx.doi.org/10.1149/1.2402991.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Manasa, Aibhattra M., Bagur R. Deepu, and Purakkat Savitha. "Composition tailored isotropic and anisotropic wet etching of glass." Materials Today: Proceedings 42 (2021): 1270–73. http://dx.doi.org/10.1016/j.matpr.2020.12.952.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Alves, M. A. R., D. F. Takeuti, and E. S. Braga. "Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching." Microelectronics Journal 36, no. 1 (2005): 51–54. http://dx.doi.org/10.1016/j.mejo.2004.10.004.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Shi, Gang, Junling Guo, Likui Wang, et al. "Photoactive PANI/TiO2/Si composite coatings with 3D bio-inspired structures." New Journal of Chemistry 41, no. 15 (2017): 6965–68. http://dx.doi.org/10.1039/c7nj00395a.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Niu, Zheng Yi, Xue Zhong Wu, Pei Tao Dong, et al. "Design and Empirical Study for Coner Compensation in 25% Wt TMAH Etching on (100) Silicon Wafers." Key Engineering Materials 483 (June 2011): 9–13. http://dx.doi.org/10.4028/www.scientific.net/kem.483.9.

Full text

Abstract:

Anisotropic wet etching is a key processing step for the fabrication of microstructures. In general, convex corner structures and non {111} crystal planes will be undercut during wet anisotropic etching. This characteristic of Si is an obstacle to the fabrication of structures in various applications. Among a number of silicon etchants, TMAH is becoming popular for low toxicity and CMOS compatibility. In this paper, a new design of compensation structure has been proposed to solve the undercutting problem with 25%wt TMAH solution. The new compensation structure is made up by squares which are connected to the convex corner. An empirical expression between the parameters of the new compensation structure and etching depth is derived. The changes of the compensation structure in different etching process are shown by photographs. Experimental results prove the high accuracy of this method. Compared to two widely used compensation structures, the new structure is more space efficient.

APA, Harvard, Vancouver, ISO, and other styles

33

Adesida, I., C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, and G. Bulman*. "Dry and Wet Etching for Group III – Nitrides." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 38–48. http://dx.doi.org/10.1557/s1092578300002222.

Full text

Abstract:

The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

APA, Harvard, Vancouver, ISO, and other styles

34

Colombo, Fábio B., and Marcelo N. P. Carreño. "A Cellular Automata Based Multi-Process Microfabrication Simulator." Journal of Integrated Circuits and Systems 6, no. 2 (2011): 87–93. http://dx.doi.org/10.29292/jics.v6i2.343.

Full text

Abstract:

We describe a 3D simulator for several fabrication techniques utilized to create MEMS. The software is based on a cellular automata model and allows the user to simulate several processes, such as anisotropic wet etching in alkaline solutions and deep reactive-ion etching (DRIE) on (100) oriented Si substrates. The simulator allows for arbitrarily shaped masking materials and several processes can be applied in sequence to the same substrate. This enables the software to simulate the fabrication of complex MEMS devices which require more than one etching step. So, we show examples of fabrication processes involving different combinations of substrate wet and plasma DRI etching. Although relatively simple automata were utilized for the simulations, the results are in excellent accordance with reported experimental results. At this moment the simulations do not consider physical parameters affecting the fabrication process, the results shown here are important from an engineering point of view for qualitative analyses. At this moment more sophisticated automata are in development to simulate other processes, like film deposition (with different degrees of anisotropy) on previously etched substrates.

APA, Harvard, Vancouver, ISO, and other styles

35

Hazura, H., A. R. Hanim, B. Mardiana, Sahbudin Shaari, and P. S. Menon. "Process Modeling, Optimization and Characterization of Silicon <100> Optical Waveguides by Anisotropic Wet Etching." Advanced Materials Research 403-408 (November 2011): 4295–99. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.4295.

Full text

Abstract:

We present a detailed fabrication process of silicon optical waveguide with a depth of 4μm via simulation and experiment. An anisotropic wet etching using Potassium Hydroxide (KOH) solutions was selected to study the influence of major fabrication parameters such as etch rate, oxidation time and development time to the fabrication performance. The fabrication of the silicon waveguide with the orientation of was modeled using ATHENA from 2D Silvaco software and was later compared with the actual fabricated device. Etching time of 4 minutes was required to etch the Si to the depth of 4μm to obtain a perfectly trapeizoidal optical waveguide structure. Our results show that the simulation model is trustworthy to predict the performance of the practical anisotropic wet etching fabrication process. The silicon-based waveguide components are targeted to be employed in realizing future photonic devices such as optical modulators.

APA, Harvard, Vancouver, ISO, and other styles

36

Sheng, Hanyu, Daisuke Fujita, Taizo Ohgi, Hiroshi Okamoto, and Hitoshi Nejoh. "Submicrometer Shadow Mask Fabricated by Anisotropic Wet Etching and Focused Ion Beam Techniques for Nanofabrication in UHV." Modern Physics Letters B 12, no. 14n15 (1998): 597–605. http://dx.doi.org/10.1142/s0217984998000706.

Full text

Abstract:

We have developed a new method for fabricating a silicon submicrometer shadow mask for nanofabrication in ultra-high vacuum. Combining KOH anisotropic wet etching, electron beam lithography, reactive ion etching and focused ion beam techniques, a pattern size of 2.5×2.5 mm2 and opaque part about 1 μm can be obtained.

APA, Harvard, Vancouver, ISO, and other styles

37

Nishioka, Kensuke, and Takatoshi Yasui. "Superhydrophobic Silicon Surface with Micro/Nanocomposite Structure Formed by 2-Step Wet Etching." Advanced Materials Research 747 (August 2013): 542–46. http://dx.doi.org/10.4028/www.scientific.net/amr.747.542.

Full text

Abstract:

The micro/nanocomposite structure on silicon surface was formed by a simple 2-step chemical etching with a potassium hydroxide anisotropic etching and a stain etching in order to obtain a superhydrophobic silicon surface. Micro-sized pyramids structure was formed in a mixture of 3 wt.% potassium hydroxide with 8 vol.% isopropyl alcohol solution at 80C for 60 min. The formation of the nanosized structure was performed by stain etching at room temperature using nitric acid (HNO3) / hydrofluoric acid (HF) aqueous solutions. The silicon surface had the superhydrophobic surface. The contact angle was measured and the maximum value was 167o for the condition of second etching with HF : HNO3 : H2O = 11 : 1 : 3.

APA, Harvard, Vancouver, ISO, and other styles

38

van Veenendaal, E., A. J. Nijdam, J. van Suchtelen, et al. "Simulation of anisotropic wet chemical etching using a physical model." Sensors and Actuators A: Physical 84, no. 3 (2000): 324–29. http://dx.doi.org/10.1016/s0924-4247(00)00362-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Shayan, Mohsen. "Study on atomistic model for simulation of anisotropic wet etching." Journal of Micro/Nanolithography, MEMS, and MOEMS 10, no. 2 (2011): 029701. http://dx.doi.org/10.1117/1.3586798.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Gos lvez, M. A., and R. M. Nieminen. "Surface morphology during anisotropic wet chemical etching of crystalline silicon." New Journal of Physics 5 (July 29, 2003): 100. http://dx.doi.org/10.1088/1367-2630/5/1/400.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Zhao, Meng, Jiani Wang, Hiroshi Oigawa, Jing Ji, Hisanori Hayashi, and Toshitsugu Ueda. "A Two-dimensional Anisotropic Wet Etching Simulator for Quartz Crystal." IEEJ Transactions on Sensors and Micromachines 131, no. 5 (2011): 185–88. http://dx.doi.org/10.1541/ieejsmas.131.185.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Xing, Yan, Miguel A. Gosalvez, Hui Zhang, Yuan Li, and Xiaoli Qiu. "Transient and Stable Profiles During Anisotropic Wet Etching of Quartz." Journal of Microelectromechanical Systems 26, no. 5 (2017): 1063–72. http://dx.doi.org/10.1109/jmems.2017.2707096.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Gosálvez, M. A., A. S. Foster, and R. M. Nieminen. "Multiscale modeling of anisotropic wet chemical etching of crystalline silicon." Europhysics Letters (EPL) 60, no. 3 (2002): 467–73. http://dx.doi.org/10.1209/epl/i2002-00287-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Lee, J. G., and T. Won. "Three-dimensional numerical simulation for anisotropic wet chemical etching process." Molecular Simulation 33, no. 7 (2007): 593–97. http://dx.doi.org/10.1080/08927020601067508.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

TANAKA, Hiroshi, Yuki SAITO, and Kazuo SATO. "J2220107 Etching characteristics on the silicon anisotropic wet etching in lower alkaline water solution." Proceedings of Mechanical Engineering Congress, Japan 2015 (2015): _J2220107——_J2220107—. http://dx.doi.org/10.1299/jsmemecj.2015._j2220107-.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Pelicano, Christian Mark, Zainovia Lockman, and Mary Donnabelle Balela. "Zinc Oxide Nanostructures Formed by Wet Oxidation of Zn Foil." Advanced Materials Research 1043 (October 2014): 22–26. http://dx.doi.org/10.4028/www.scientific.net/amr.1043.22.

Full text

Abstract:

Zinc oxide (ZnO) nanostructures were successfully grown by wet oxidation of zinc (Zn) foil in water at 90 °C for 2 to 8 h. The effect of etching the Zn foil before oxidation treatment on the morphology of ZnO nanostructures was investigated. Hemispherical structures of ZnO nanowires, nanorods and nanotubes were produced on etched Zn foil at different oxidation times. The growth of hemispherical structures was possibly due to the formation of pits along the grains after etching. Without etching, relatively aligned nanorods were formed after wet oxidation with the structure becoming coarser after longer oxidation time. The anisotropic growth ZnO nanostructures on the surface of Zn foil by wet oxidation could be due to the inherent growth habit of ZnO crystal.

APA, Harvard, Vancouver, ISO, and other styles

47

Pakpum, Chu Pong. "Wet Etching Technique to Reduce Pyramidal Hillocks for Anisotropic Silicon Etching in NaOH/IPA Solution." Key Engineering Materials 659 (August 2015): 681–85. http://dx.doi.org/10.4028/www.scientific.net/kem.659.681.

Full text

Abstract:

The various methods of silicon wet etching techniques, which utilize ultrasonic agitation to reduce pyramidal hillocks in etched patterns, were evaluated in NaOH+IPA solution. The comparison of the etching methods composed of; 1.) no agitation + sample horizontally orientated, 2.) ultrasonic agitation + sample horizontally orientated, 3.) ultrasonic agitation + sample vertically orientated, and 4.) ultrasonic with rotation agitation + sample vertically orientated. It was found that the percentages of the etched patterns presenting hillocks after etching were 100%, 79.77%, 32.67% and 2.62%, respectively. Ultrasonic coupled with rotation agitation along with the sample vertically orientated is the most powerful etching technique, offering a high yield of smooth etched surface. The difference in etch rate between without agitation and applying ultrasonic agitation was not observed in this experiment, as it was operated in a solution temperature 60-65°C and a 275nm/min etch rate was achieved. The theories that relate to each evaluated method are also discussed.

APA, Harvard, Vancouver, ISO, and other styles

48

Li, Wei, Lu Feng Che, Xiao Lin Li, Jian Wu, and Yue Lin Wang. "A Novel Z-Axis Capacitance Accelerometer with Highly Symmetrical 16-Beam Structure." Key Engineering Materials 562-565 (July 2013): 412–16. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.412.

Full text

Abstract:

A novel highly symmetrical 16-beam sandwich structure Z-axis differential capacitance accelerometer is presented. In this design, the proof mass is suspended symmetrically by double-side of 16 straight beams with highly uniform dimension which can reduce the cross-axis sensitivity and rotational influences dramatically. Parameters of the beam-mass structure were analyzed and optimized by finite element analysis (FEA) software. The micro accelerometer is based on bulk-micromachining by DRIE and KOH anisotropic wet etching technologies. The beam-mass structure was released by anisotropic wet etching on both device layer sides simultaneously. The fabricated accelerometer was measured over the maximum range of 30g gravity field, results of measurement show that the close-loop sensitivity is 80mV/g, the nonlinearity is 0.27%, and the bias stability is 0.63mg for an hour.

APA, Harvard, Vancouver, ISO, and other styles

49

Wang, Zixing, Xiang Zhang, Jordan A. Hachtel, et al. "Etching of transition metal dichalcogenide monolayers into nanoribbon arrays." Nanoscale Horizons 4, no. 3 (2019): 689–96. http://dx.doi.org/10.1039/c8nh00364e.

Full text

Abstract:

A facile mechano-chemical method was developed to etch TMDC monolayers into anisotropic nanoribbon arrays through wet chemistry. The etching is done under both the effect of chemical reaction with ascorbic acid, and mechanical detachment from the substrate using water's dipole moment.

APA, Harvard, Vancouver, ISO, and other styles

50

Abdur-Rahman, Eyad, Ibrahim Alghoraibi, and Hassan Alkurdi. "Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer." International Journal of Analytical Chemistry 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/7542870.

Full text

Abstract:

A micropyramid structure was formed on the surface of a monocrystalline silicon wafer (100) using a wet chemical anisotropic etching technique. The main objective was to evaluate the performance of the etchant based on the silicon surface reflectance. Different isopropyl alcohol (IPA) volume concentrations (2, 4, 6, 8, and 10%) and different etching times (10, 20, 30, 40, and 50 min) were selected to study the total reflectance of silicon wafers. The other parameters such as NaOH concentration (12% wt.), the temperature of the solution (81.5°C), and range of stirrer speeds (400 rpm) were kept constant for all processes. The surface morphology of the wafer was analyzed by optical microscopy and atomic force microscopy (AFM). The AFM images confirmed a well-uniform pyramidal structure with various average pyramid sizes ranging from 1 to 1.6 μm. A UV-Vis spectrophotometer with integrating sphere was used to obtain the total reflectivity. The textured silicon wafers show high absorbance in the visible region. The optimum texture-etching parameters were found to be 4–6% vol. IPA and 40 min at which the average total reflectance of the silicon wafer was reduced to 11.22%.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!