Journal articles: 'Annealing factor'

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Cui, Yun Xin, Han Xiao, Chi Xiong, Rong Feng Zhou, Zu Lai Li, and Yong Kun Li. "Effect of Homogenization Annealing on Wear Properties of Thixo-Extrued Copper Alloy." Solid State Phenomena 327 (January 10, 2022): 71–81. http://dx.doi.org/10.4028/www.scientific.net/ssp.327.71.

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The semi-solid extruded CuSn10P1 alloy bushings were homogenization annealed. The effects of annealing process on the hardness and wear properties of bushings were researched. The results show the Brinell hardness increases firstly and then decreases with the increase of annealing temperature and annealing time. With the annealing temperature increasing, the grinding loss rate and friction factor decrease firstly and then increase. At the annealing time of 120 min, the grinding loss rate decreases from 7% at the annealing temperature of 450 °C to 6% at 500 °C, and then increases from 6% at 500 °C to 12% at 600 °C. The friction factor decreases from 0.54 to 0.48 and then increases to 0.83. At the annealing temperature of 500 °C, the grinding loss rate decreases from 11% at the annealing time of 60 min to 6% at 120 min, and then increases to 15% at 150 min. The friction factor decreases from 0.67 to 0.48 and then increases to 0.72. The best wear performance and Brinell hardness can be obtained at annealing temperature of 500 °C for 120 min.

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SUHA H. IBRAHEEM,. "Effect of Laser annealing on structural and thermoelectric properties of SnSe thin films." journal of the college of basic education 28, no. 115 (2022): 1–9. http://dx.doi.org/10.35950/cbej.v28i115.5828.

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This study adopted the flash evaporation technique to prepare SnSe thin films onto glass substrates kept at room temperature. The effect of CO2 laser annealing on the structural properties and thermoelectric characterizations of SnSe films was investigated in power annealing (10 W) at (10,15,20 Min). Morphologies and structures of the crystalline were determined using an atomic force microscope and X-ray diffraction. Power factor, electrical conductivity, and the Seebeck coefficients were determined. The results demonstrated that the power factor and the Seebeck coefficient were enhanced as the annealing time increased. When the annealing time reaches twenty minutes at 500K, the power factor and Seebeck coefficient of SnSe thin films were found to be about 6.33 μW/cm.K2 and 650 μV/K., respectively.

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Nakamura, Tomonori, Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, and Kunikaza Izumi. "Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode." Materials Science Forum 483-485 (May 2005): 721–24. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.721.

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We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.

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Li, L., X. J. Zhu, L. Zhang, and F. Z. Tian. "Damage constitutive model of pure copper at different annealing temperatures." Journal of Physics: Conference Series 2045, no. 1 (2021): 012013. http://dx.doi.org/10.1088/1742-6596/2045/1/012013.

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Abstract Aiming at the problem of damage evolution of pure copper during the plastic deformation, the normalized shape factor is introduced based on the RO model (Ramberg-Osgood model). The mesoscopic damage constitutive model of pure copper at different annealing temperatures is established and the tensile deformation of industrial pure copper at different annealing temperatures is analyzed. The results show that the error between the calculated value and the experimental value of the damage constitutive model, based on normalized shape factor, at different annealing temperatures, is less than 10%. The model can effectively reveal the tensile damage evolution behavior of industrial pure copper and accurately predict the plastic tensile flow stress of industrial pure copper at different annealing temperatures. The hardening coefficient and hardening exponent in the model are closely related to the annealing temperature of the material. The annealing temperature has little effect on the hardening exponent and has a significant effect on the hardening coefficient and the hardening coefficient decreases with the increase in annealing temperature.

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Sun, Min, Pengyu Zhang, Qingmin Li, et al. "Enhanced N-Type Bismuth-Telluride-Based Thermoelectric Fibers via Thermal Drawing and Bridgman Annealing." Materials 15, no. 15 (2022): 5331. http://dx.doi.org/10.3390/ma15155331.

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N-type bismuth telluride (Bi2Te3) based thermoelectric (TE) fibers were fabricated by thermal drawing and Bridgman annealing, and the influence of Bridgman annealing on the TE properties of n-type Bi2Te3-based TE fibers was studied. The Bridgman annealing enhanced the electrical conductivity and Seebeck coefficient because of increasing crystalline orientation and decreasing detrimental elemental enrichment. The TE performance of n-type Bi2Te3-based TE fibers was improved significantly by enhancing the power factor. Hence the power factor increased from 0.14 to 0.93 mW/mK2, and the figure-of-merit value is from 0.11 to 0.43 at ~300 K, respectively.

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Zhou, Liqin, P. M. Vilarinho, P. Q. Mantas, and J. L. Baptista. "Dielectric Properties of Pb(Fe2/3W1/3)1−xMnxO3 Ceramics in the Temperature Range 200–600 K." Journal of Materials Research 15, no. 6 (2000): 1342–48. http://dx.doi.org/10.1557/jmr.2000.0195.

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The dielectric properties of Mn-doped Pb(Fe2/3W1/3)1−xMnxO3 (x = 0, 0.001, 0.003, and 0.005) in the temperature range 200–600 K were investigated. Two sets of dielectric peaks, located at 200–350 K and 350–600 K, were observed. The intensity of the dielectric permittivity and loss factor peaks for both relaxations decreased with the increase in the Mn content and no peak occurred when x = 0.005. Nonlinear current–voltage (I–V) behavior was observed in the samples containing less than 0.005Mn. The activation energy values for the relaxations at 200–350 K and at 350–600 K were around 0.42 and 0.56 eV, respectively. The direct current conduction activation energies were around 0.41 eV. Nitrogen annealing eliminated the relaxation peaks at 200–350 K while oxygen annealing enhanced them. Both annealings eliminated the dielectric peaks at 350–600 K. The nonlinear I–V characteristic tended to vanish either after the oxygen or the nitrogen annealing treatments. Relaxation mechanisms are proposed and discussed. It is suggested that the relaxation at 200–350 K is related to electron hole while the relaxation at 350–600 K is attributed to microstructure-dependent space-charge polarization.

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Wei, Ding, Xian Wang, Ze Kun Feng, and Rong Zhou Gong. "Effect of Annealing Temperature on the Soft Magnetic Behavior of Sendust Powder Core." Applied Mechanics and Materials 556-562 (May 2014): 6–10. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.6.

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The variation of soft magnetic properties of Sendust powder cores as a function of annealing temperature has been investigated. Toroid-shaped Sendust powder cores were prepared from Fe-Si-Al powder by machine pulverizing and subsequent cold pressing using inorganic insulating layer and organic binders, respectively. The influence of different compaction pressures and various annealing temperature on effective permeability and quality factor was investigated. Sendust powder cores using inorganic salt as insulating layer exhibit high effective permeability ( μe>110) up to 1 MHz, showing excellent frequency stable characteristics and high quality factor (Q>80) at 50 kHz. The optimized annealing temperature is 953K.

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ALI, A., M. YASAR, F. NASIM, and A. S. BHATTI. "TEMPERATURE-DEPENDENT MODIFICATIONS OF Ag/SiO2/p-Si SCHOTTKY CONTACTS FORMED AT 20 K." International Journal of Nanoscience 09, no. 03 (2010): 135–38. http://dx.doi.org/10.1142/s0219581x10006740.

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The Schottky contacts of Ag/SiO2 /p- Si were fabricated by thermal evaporation at 20 K. The effect of annealing temperatures varying from 373 to 773 K on the morphology and electrical properties of these contacts was investigated. The average grain size increased while the density of grains decreased with increasing temperature. Ideality factor initially observed was as high as 4.15 with a low barrier height of 0.04 eV for contact grown at 20 K. Annealing resulted in shift of ideality factor and barrier height towards ideal behavior. Thus, it is demonstrated that Ag/SiO2 /p- Si contacts grown at low temperature can be modified by annealing.

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Nadaud, Kevin, Matej Sadl, Micka Bah, Franck Levassort, and Hana Ursic. "Effect of thermal annealing on dielectric and ferroelectric properties of aerosol-deposited 0.65Pb(Mg_1/3Nb_2/3)O₃-0.35PbTiO₃ thick films." Applied Physics Letters 120, no. 11 (2022): 112902. http://dx.doi.org/10.1063/5.0087389.

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In this work, the effects of thermal annealing at 500 °C on aerosol-deposited 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thick films on stainless-steel substrates are investigated using two complementary methods at high and low applied external electric fields. The first one is the positive up negative down method, which allows us to obtain information about the switching and non-switching contributions to the polarization. It shows that the as-deposited film is ferroelectric before annealing, since it has a switching contribution to the polarization. After annealing, both the switching and non-switching contributions to polarization increased by a factor of 1.6 and 2.33, respectively, indicating a stronger ferroelectric behavior. The second method is based on impedance spectroscopy coupled with Rayleigh analysis. The results show that post-deposition thermal annealing increases the reversible domain wall contribution to the dielectric permittivity by a factor of 11 while keeping the threshold field similar. This indicates that, after annealing, domain wall density is larger while domain wall mobility remains similar. These two complementary characterization methods show that annealing increases the ferroelectric behavior of the thick film by increasing the domain wall density, and its influence is visible both on polarization vs electric field loop and dielectric permittivity.

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Guo, Xinfang, Fangzhou Wang, Xiaoqi Ma, et al. "Annealing enhanced ferromagnetic resonance of thickness-dependent FeGa films." Applied Physics Letters 120, no. 20 (2022): 202402. http://dx.doi.org/10.1063/5.0090880.

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We report the influence of different annealing temperatures on the magnetic property of FeGa thin films. The measurement was done for the film thickness from 42 to 420 nm. Our results show that the annealing temperature affects not only the microstructure but also the ferromagnetic resonance signal of the film. Annealing of a FeGa film improves the in-plane remanence ratio and reduces the in-plane ferromagnetic resonance linewidth by a factor of five. This annealing treatment promotes film texture and releases compressive stresses in the film. Our results demonstrate that the structural control via annealing is viable. The necessary magnetic softness of the FeGa film for microwave applications can be achieved.

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Lu, Di, Yu-E. Yang, Weichun Zhang, Caixia Wang, Jining Fang, and Chunlan Ma. "Comparative study of electron transfer on various graphene-metallic contacts." Modern Physics Letters B 33, no. 31 (2019): 1950384. http://dx.doi.org/10.1142/s0217984919503846.

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We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

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Faraz, Sadia Muniza, Syed Riaz un Nabi Jafri, Zarreen Tajvar, Naveed ul Hassan Alvi, Qamar-ul Wahab, and Omer Nur. "Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction." Elektronika ir Elektrotechnika 27, no. 4 (2021): 49–54. http://dx.doi.org/10.5755/j02.eie.28723.

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The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.

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Tumarkin, Andrey, Alexey Bogdan, Evgeny Sapego, et al. "Enhanced Tunable Properties of Strontium Barium Niobate Films on Dielectric Alumina Substrate at Microwaves." Coatings 13, no. 11 (2023): 1937. http://dx.doi.org/10.3390/coatings13111937.

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(Sr,Ba)Nb2O6 (SBN) relaxor ferroelectric thin films exhibiting nonlinear properties promising for microwave applications were grown on a polycrystalline aluminum oxide substrate for the first time. Films of good crystallinity were obtained using the sputtering technique and high-temperature annealing. For all films, a significant change in the phase composition after high-temperature treatment was observed, and annealing provided a different effect on the phase composition of films deposited at different substrate temperatures. Tunable properties of the SBN films were investigated as a function of the deposition temperature and annealing conditions using planar capacitors with microwaves. The capacitor based on the strontium barium niobate film deposited at a temperature of 950 °C and subjected to annealing demonstrates a tunability of 44% and a loss tangent of 0.009 ÷ 0.022, which is expressed in the microwave commutation quality factor of 1740. This is the first successful attempt to form planar capacitive structures based on SBN films, which reveal a commutation quality factor above 1000 for tunable microwave applications.

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Tong, Xing Xing, and Xue Wen Tong. "Modeling of Annealing Heat Treatment Parameters for Zr Alloy Tube by ANN-Ga." Materials Science Forum 1001 (July 2020): 207–11. http://dx.doi.org/10.4028/www.scientific.net/msf.1001.207.

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In this paper, there are tow part of module for predicting the Annealing heat treatments of Zr tube. The artificial neural network (ANN) were used for relationship between mechanical property and annealing parameters. The genetic algorithm (GA) were used for Annealing heat treatments of Zr tube. The best ANN network architecture is 2-8-3, and the optimum values of momentum factor is 0.8 while the Crossover is also 0.8 by ANN-GA, which can be efficiently track the effect of annealing Heat treatment on properties for Zr-4 alloy. Keywords: Zr alloy, Heat Treatment, mechanical propert

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Zhang, Xiaoling, and Yueli Ni. "Model and solution for the traveling salesman problem with multiple time windows." ITM Web of Conferences 45 (2022): 01017. http://dx.doi.org/10.1051/itmconf/20224501017.

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This paper applies the multi-time window traveling salesman problem to not only optimize the logistics cost, but also effectively endow users with multiple discrete idle optional time periods to meet the time requirements of just-in-time production. In the process of problem solving, firstly, the dynamic penalty factor is introduced into the objective function and the penalty function is added to relax the constraints of multi-time window in order to construct the relaxation model. Secondly, while in solving the model, the compressed annealing algorithm, which has the property of probability convergence, is proposed on the basis of the simulated annealing algorithm with only temperature parameter. The dynamic penalty factor is added as a pressure parameter to control the probability of the transition to an infeasible route regarding the time windows. Finally, comparison through data experiments between multi-time windows and single-time windows verifies the practicability of the former and comparison between the solution algorithm and simulated annealing algorithm verifies the stability of compressed annealing algorithm. The result shows that the compressed annealing algorithm is a comparatively better method to solve multi-time window traveling salesman problem.

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Lin, Jyun-Min, Ying-Chung Chen, and Chi-Pi Lin. "Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method." Journal of Nanomaterials 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/201017.

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Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

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Dr., P. Sivaranjani, and Srividhya G. "3D IC PARTITIONING BY USING FAST FORCE DIRECTED SIMULATED ANNEALING ALGORITHM FOR REDUCING THROUGH-SILICON VIAS." International Journal of Advanced Trends in Engineering and Technology 1, no. 2 (2017): 6–11. https://doi.org/10.5281/zenodo.345430.

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Three dimensional(3D) integration has recently become popular due to reduction in wire length, manufacturability, power consumption and it mainly enhances the integration of Very Large Scale Integration(VLSI).As demands accelerate for increasing density, higher bandwidths and lower power, many IC manufacturing industry are looking up to 3D ICs with Through-Silicon vias.3D ICs accommodates multiple heterogeneous die and integrates great deal of functionality into small form factor, while improving performance and reducing costs. It offers new levels of efficiency, power, performance and form factor. In this paper a novel force directed simulated annealing is introduced and used for 3D partitioning. The proposed method introduces force as a new factor during the annealing process and it replaces every random move by force directed moves. The experimental results show that the proposed method speeds up the convergence, and reduces the number of Through-Silicon vias by maintaining the quality of solution when compared to conventional simulated annealing algorithm.

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Feng, Yan Qing, Zhi Guo Gao, and Fu Ming Wang. "Recrystallization Law of Ti-IF Steel During Annealing Process." Advanced Materials Research 399-401 (November 2011): 2301–4. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.2301.

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Recrystallization law was investigated at different annealing processes. The results showed that the annealing temperature was a main effect factor on the properties of Ti-IF steel. Nominal recrystallization temperature of the samples was evaluated as 620 °C. Simulated batch annealing was performed by two-stage heating. Determined recrystallization temperature was 660 °C, the recrystallization of samples heated at 660 °C was completed in 68min. For 800 °C, the equiaxial recrystallized grains were obtained. Simulated continuous annealing by rapidly heating to different temperatures, samples were held for 100s and then cooled in air. Recrystallization nucleation was not observed until 660 °C. The occurrence of secondary recrystallization was observed at 900 °C.

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Myong, Seung Yeop. "Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells." Advances in OptoElectronics 2007 (June 5, 2007): 1–8. http://dx.doi.org/10.1155/2007/30569.

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The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H-) based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

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Schaal, M., P. Lamparter, and S. Steeb. "Fractal Behaviour of Amorphous Ni32Pd52P16 Studied by SANS." Zeitschrift für Naturforschung A 44, no. 1 (1989): 4–6. http://dx.doi.org/10.1515/zna-1989-0102.

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Abstract Small angle neutron scattering (SANS) was done with meltspun amorphous Ni32Pd52P16 in the as-quenched state as well as after annealing at 533 K, 570 K. and 607 K, 20 h each. The double logarithmic plot of the structure factor versus the momentum transfer shows linear behaviour with noninteger Porod-slopes. The results are interpreted with the scattering from fractally rough inner surfaces.The as-quenched state contains fluctuations of the scattering length density associated with smooth boundary interfaces. Annealing yields rough boundary interfaces, the roughness being largest after the 570 K annealing. Annealing at the higher temperature of 607 K yields less rough boundary interfaces.

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Kim, Dong-Hyeon, Seong-Ji Min, Jong-Min Oh, and Sang-Mo Koo. "Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes." Materials 13, no. 19 (2020): 4335. http://dx.doi.org/10.3390/ma13194335.

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The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density–voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes.

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Fouda, I. M., M. A. Kabeel, and F. M. El-Sharkawy. "Anisotropic Optical Properties of Nylon 6-6 Fibres as a Function of Annealing and Quenching Processes." Engineering Plastics 5, no. 3 (1997): 147823919700500. http://dx.doi.org/10.1177/147823919700500305.

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Changes in the structure of nylon 6-6 fibres after annealing and quenching in coarse grained ice at 160°C were studied interferometrically. The Pluta polarising interference microscope has been used to determine the mean refractive indices and mean birefringence of these fibres. The optical orientation function and the molecular structure of the annealed and quenched nylon 6-6 fibres were calculated. The density and the mechanical loss factor of the annealed and quenched fibres were measured by a system based on vibrating strings. The density results were used to calculate the degree of crystallinity. Relationships between the mean refractive indices, birefringence, isotropic refractive index and polarisabilities per unit volume at various times are given for these fibres. The behaviour of fibre density and the mechanical loss factor under different annealing and quenching conditions were discussed with different optical parameters. The results obtained clarify the effect of annealing and quenching conditions on the orientation function, orientation angle and other optical and mechanical parameters. The effect of the annealing conditions on the refractive index profile was studied. Illustrations are given using graphs and microinterferograms.

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Fouda, I. M., M. A. Kabeel, and F. M. El-Sharkawy. "Anisotropic Optical Properties of Nylon 6-6 Fibres as a Function of Annealing and Quenching Processes." Polymers and Polymer Composites 5, no. 3 (1997): 203–15. http://dx.doi.org/10.1177/096739119700500305.

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Changes in the structure of nylon 6-6 fibres after annealing and quenching in coarse grained ice at 160°C were studied interferometrically. The Pluta polarising interference microscope has been used to determine the mean refractive indices and mean birefringence of these fibres. The optical orientation function and the molecular structure of the annealed and quenched nylon 6-6 fibres were calculated. The density and the mechanical loss factor of the annealed and quenched fibres were measured by a system based on vibrating strings. The density results were used to calculate the degree of crystallinity. Relationships between the mean refractive indices, birefringence, isotropic refractive index and polarisabilities per unit volume at various times are given for these fibres. The behaviour of fibre density and the mechanical loss factor under different annealing and quenching conditions were discussed with different optical parameters. The results obtained clarify the effect of annealing and quenching conditions on the orientation function, orientation angle and other optical and mechanical parameters. The effect of the annealing conditions on the refractive index profile was studied. Illustrations are given using graphs and microinterferograms.

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MOHD YUSOFF, M. Z., Z. HASSAN, C. W. CHIN, S. M. THAHAB, and H. ABU HASSAN. "THE STUDIES OF THERMAL ANNEALING ON Pt/AlGaN GROWN ON Si(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE)." Modern Physics Letters B 24, no. 29 (2010): 2889–98. http://dx.doi.org/10.1142/s0217984910025164.

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The application of thermal annealing at various annealing temperatures (473–1073 K) has been shown to significantly modify surface morphology of platinum ( Pt ) metal contacts on AlGaN / GaN / AlN heterostructure grown on silicon by plasma-assisted molecular beam epitaxy (PA-MBE). Structural analysis of the AlGaN / GaN samples used for the Pt Schottky contacts fabrication were performed by using high resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Pt metal contacts were then deposited on the samples followed by current–voltage (I–V) characterization. Thermally-treated samples showed significant decrease in current compared with untreated samples. From the I–V measurements, the Schottky barrier height (SBH) and ideality factor (n) were calculated. We found that the lowest value of SBH obtained was 0.526 eV at 873 K annealing temperature. Unfortunately, there are no values for the SBH and ideality factor at 1073 K annealing temperature. The SEM analysis has shown some island formation at high annealing temperature due to the difference of surface energies between thin metal films and AlGaN that causes dewetting. We suggest that the reason for the barrier height reduction is due to the metal island formation on the samples.

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Reddy M, Bhaskar. "Influence of annealing temperature on the electrical, structural and surface morphology properties of Au/Cr Schottky contacts on n-type InP." JOURNAL OF ADVANCES IN PHYSICS 5, no. 3 (2014): 823–36. http://dx.doi.org/10.24297/jap.v5i3.6961.

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The influence of rapid thermal annealing on the electrical and structural properties of Au/Cr/n-InP Schottky diode havebeen investigated by the current-voltage (I-V), capacitance-voltage (C-V), auger electron spectroscopy (AES) and X-raydiffraction (XRD) measurements. The Schottky barrier height (SBH) and ideality factor (n) of the as-deposited Au/Cr/n-InPSchottky diode are 0.51 eV (I-V)/0.64 eV (C-V) and 1.81, respectively. When the contact is annealed at 200 oC in N2atmosphere for 1min, a maximum SBH (0.71 eV (I-V)/0.81 eV (C-V)) and low ideality factor (1.15) are achieved for theAu/Cr/n-InP Schottky diode. However, after annealing at 300 oC, the SBH slightly decreases to 0.58 eV (I-V)/0.69 eV (CV),and ideality factor increases to 1.45, respectively. The SBHs obtained from the Norde and Cheungâ€™s methods areclosely matched with those obtained from the I-V method. Results show that the optimum annealing temperature for theAu/Cr/n-InP Schottky diode is 200 Â°C. Further, the discrepancy between SBHs calculated from I-V and C-V methods isalso discussed. Moreover, the energy distribution of interface state density is estimated from forward bias I-Vcharacteristics at different annealing temperatures. AES and XRD studies reveal that the formation of indium (In) phasesat Au/Cr and InP interface may be the cause for the increase in SBH after annealing at 200 oC. The AFM results show thatthe overall surface morphology of Au/Cr Schottky contacts is considerably smooth at elevated tempratures.

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Li, Jian-Sian, Chao-Ching Chiang, Hsiao-Hsuan Wan, et al. "Forward bias annealing of proton radiation damage in NiO/Ga₂O₃ rectifiers." Physica Scripta 99, no. 7 (2024): 075312. http://dx.doi.org/10.1088/1402-4896/ad5514.

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Abstract 17 MeV proton irradiation at fluences from 3–7 × 1013 cm−2 of vertical geometry NiO/β-Ga2O3 heterojunction rectifiers produced carrier removal rates in the range 120–150 cm−1 in the drift region. The forward current density decreased by up to 2 orders of magnitude for the highest fluence, while the reverse leakage current increased by a factor of ∼20. Low-temperature annealing methods are of interest for mitigating radiation damage in such devices where thermal annealing is not feasible at the temperatures needed to remove defects. While thermal annealing has previously been shown to produce a limited recovery of the damage under these conditions, athermal annealing by minority carrier injection from NiO into the Ga2O3 has not previously been attempted. Forward bias annealing produced an increase in forward current and a partial recovery of the proton-induced damage. Since the minority carrier diffusion length is 150–200 nm in proton irradiated Ga2O3, recombination-enhanced annealing of point defects cannot be the mechanism for this recovery, and we suggest that electron wind force annealing occurs.

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Motai, Daiki, Ryota Ohashi, and Hideaki Araki. "Effect of annealing temperature on p–n junction formation in Cu₂SnS₃ thin-film solar cells fabricated via the co-evaporation of elemental precursors." Japanese Journal of Applied Physics 61, SB (2022): SB1043. http://dx.doi.org/10.35848/1347-4065/ac2e56.

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Abstract Cu2SnS3 (CTS) thin-film solar cells were fabricated by the co-evaporation of the precursors, and the effect of annealing in N2 atmosphere on their photovoltaic properties was investigated by varying the annealing temperature after the chemical bath deposition of CdS. The characteristics of the solar cells improved as the annealing temperature was increased in the 250 °C–275 °C range (annealing time: 30 min). However, annealing temperatures exceeding 275 °C caused the deterioration of the device characteristics. Therefore, annealing in the 250 °C–275 °C range after CdS deposition is important for forming an optimum p–n junction at the CTS/CdS interface for manufacturing the CTS solar cells evaluated in this study. The best-performing solar cell fabricated using a CTS film annealed at 275 °C after CdS deposition exhibited an open circuit voltage of 0.181 V, with a short circuit current density of 20.9 mA cm−2, fill factor of 0.462, and power conversion efficiency of 1.74%.

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Gilissen, Koen, Jeroen Stryckers, Wouter Moons, Jean Manca, and Wim Deferme. "Microwave annealing, a promising step in the roll-to-roll processing of organic electronics." Facta universitatis - series: Electronics and Energetics 28, no. 1 (2015): 143–51. http://dx.doi.org/10.2298/fuee1501143g.

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In recent years, organic printable electronics has gained more and more attention. The development and characterization of new printing techniques and functional inks is vital to accomplish solution processable, large area organic electronic devices e.g.: organic photovoltaics (OPV), organic light-emitting diodes (OLEDs). In this study a systematic comparison is made between hotplate annealing and microwave annealing of (screen) printed Poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) layers. PEDOT:PSS films treated with both techniques were characterized and compared by their thin film morphology, their electronic properties and their annealing time. It is shown that no difference in the thin film morphology and final sheet resistance was observed for microwave annealed compared to the hotplate annealed samples. Above that the annealing time is decreased up to a factor 6. These results show that microwave annealing is a feasible fast annealing technique for PEDOT:PSS thin films and can therefor reduce the total processing time of organic and PEDOT:PSS based electronic applications.

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Wang, Y., M. K. Mikhov, and B. J. Skromme. "Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation." Materials Science Forum 527-529 (October 2006): 915–18. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.915.

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The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni Schottky diodes formed on the annealed surfaces is studied. The surface morphology is also characterized by atomic force microscopy (AFM). Annealing for 10 minutes at temperatures up to 1800 °C with graphite encapsulation actually reduces the high-current ideality factor of the diodes while raising the current-voltage barrier height (linearly extrapolated to unity ideality factor) from 1.453 V to 1.67-1.73 V. Excess leakage current occurs only in a subset of diodes, which are believed to be affected by extended defects. The AFM images show no significant surface roughening, and the graphite can be removed after processing. This encapsulation method is found to be highly effective in preserving the electronic properties of the surface during high temperature annealing.

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Wang, Xu, Sun, Zong, Chen, and Shan. "Study on Microstructure Evolution and Mechanical Properties of Ti2AlNb-Based Alloy under Canning Compression and Annealing." Metals 9, no. 9 (2019): 980. http://dx.doi.org/10.3390/met9090980.

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The influence of height reduction on the microstructure evolution and mechanical properties of the Ti2AlNb-based alloy was investigated during canning compression and subsequent annealing. After the annealing treatment, the spheroidized B2 phase grains occurred because of partial recrystallization. Meanwhile, the texture evolution of the B2 phase and O phase were analyzed under the deformation degree, ranging from 25% to 75%. The results show that the mechanical properties of the post-annealed alloys were co-affected by the grain size and Schmid factor of the B2 phase. When the height reduction was less than 25%, the compression strength was mainly affected by the grain size. When the height reduction was higher than 50%, it was mainly dominated by the Schmid factor. When the deformation degree reached 75%, the recrystallized grain size decreased to 0.9 μm. Meanwhile, the Schmid factor of a {110}<001> slip system in B2 phase reduced to 0.34. Therefore, the yield strength of the Ti2AlNb alloy at room temperature increased from 892 MPa in the as-rolled condition to 935 MPa after the canning compression and annealing.

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Yang, Zhe, Mingchen Li, Wanxia Wang, Jianhong Gong, Honggang Sun, and Hui Sun. "Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor." Journal of Physics D: Applied Physics 57, no. 14 (2024): 145301. http://dx.doi.org/10.1088/1361-6463/ad1a63.

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Abstract Copper iodide (CuI) is an intrinsically transparent p-type semiconductor with a wide band gap of about 3.1 eV. In this work, Cu3N films were prepared as precursors through high-power impulse magnetron sputtering and then were solid-phase iodinated at room temperature for the preparation of transparent CuI films. Subsequently, transparent p-CuI/n-ZnO heterojunctions were fabricated wherein ZnO layers were deposited by radio frequency magnetron sputtering. After the properties are optimized by annealing, the heterojunctions exhibit significant rectification characteristics. The influence of annealing temperature on the electrical properties of the heterojunctions have been investigated. The optimal ideality factor of about 1.22 can be obtained with a rectification ratio of 1.05 × 105 after the heterojunctions annealing at 100 °C. This value is superior to most of the results reported in the literature. Meanwhile, the light-to-dark current ratio and the transmittance in the visible region of the heterojunction have also been studied. The light-to-dark current ratio is significant at 6.42 × 106. The average transmittance of the heterojunctions is 72.7%. These findings demonstrate the potential applications of CuI for optoelectronic devices and the promising prospects of p-CuI/n-ZnO heterojunction-based photodetectors and other optoelectronic devices.

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Qin, Xingxing, Xuelai Yu, Zerui Li, et al. "Thermal-Induced Performance Decay of the State-of-the-Art Polymer: Non-Fullerene Solar Cells and the Method of Suppression." Molecules 28, no. 19 (2023): 6856. http://dx.doi.org/10.3390/molecules28196856.

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Improving thermal stability is of great importance for the industrialization of polymer solar cells (PSC). In this paper, we systematically investigated the high-temperature thermal annealing effect on the device performance of the state-of-the-art polymer:non-fullerene (PM6:Y6) solar cells with an inverted structure. Results revealed that the overall performance decay (19% decrease) was mainly due to the fast open-circuit voltage (VOC, 10% decrease) and fill factor (FF, 10% decrease) decays whereas short circuit current (JSC) was relatively stable upon annealing at 150 °C (0.5% decrease). Pre-annealing on the ZnO/PM6:Y6 at 150 °C before the completion of cell fabrication resulted in a 1.7% performance decrease, while annealing on the ZnO/PM6:Y6/MoO3 films led to a 10.5% performance decay, indicating that the degradation at the PM6:Y6/MoO3 interface is the main reason for the overall performance decay. The increased ideality factor and reduced built-in potential confirmed by dark J − V curve analysis further confirmed the increased interfacial charge recombination after thermal annealing. The interaction of PM6:Y6 and MoO3 was proved by UV-Vis absorption and XPS measurements. Such deep chemical doping of PM6:Y6 led to unfavorable band alignment at the interface, which led to increased surface charge recombination and reduced built-in potential of the cells after thermal annealing. Inserting a thin C60 layer between the PM6:Y6 and MoO3 significantly improved the cells’ thermal stability, and less than 2% decay was measured for the optimized cell with 3 nm C60.

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Kostin, Vladimir, Evgeny Serbin, and Olga Vasilenko. "Investigation of the Evolution of Magnetic and Acoustic Characteristics as a Result of Annealing of Cold-Deformed Nickel." MATEC Web of Conferences 346 (2021): 02039. http://dx.doi.org/10.1051/matecconf/202134602039.

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The change in the magnetic and acoustic properties of nickel as a result of cold deformation and subsequent annealing is investigated. It was found that annealing leads to very significant changes in the magnetic and acoustic properties of nickel. The coercive force decreases 50 times with an increase in the annealing temperature to 800 °C. The Rayleigh coefficient, which characterizes the mobility of domain walls, monotonically increases by a factor of 20 over the entire investigated range of annealing temperatures. The greatest changes in the velocity and damping of longitudinal ultrasonic vibrations occur in the range of recrystallization temperatures. It is shown that to diagnose the structure and magnitude of residual stresses in nickel, it is advisable to determine its magnetic and acoustic parameters.

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Xiao, Qing Quan, Quan Xie, Ke Jie Zhao, and Zhi Qiang Yu. "Effect of Annealing Atmosphere on the Mg₂Si Film Growth Deposited by Magnetron Sputtering." Advanced Materials Research 129-131 (August 2010): 290–94. http://dx.doi.org/10.4028/www.scientific.net/amr.129-131.290.

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Semiconducting Mg2Si films were fabricated on Si (111) substrates by magnetron sputtering and subsequent annealing, and the effects of annealing atmosphere on the Mg2Si film growth were studied. The structural and morphological properties of Mg2Si films were investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that annealing atmosphere was an important factor that affected the growth of Mg2Si thin films, and vacuum annealing was not suitable for preparing Mg2Si thin films. Only Si (111) substrate diffraction peaks were observed, and no Mg2Si diffraction peak was observed when the first six Mg/Si samples were annealed under vacuum annealing condition. However, many Mg2Si diffraction peaks were observed besides the Si substrate diffraction peaks when the second six Mg/Si samples were annealed under Ar gas atmosphere. In addition, compact and smooth Mg2Si thin films annealed under Ar gas atmosphere were obtained.

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Hong-Ru Lin. "The Effects of Foaming and Annealing on Mechanical Properties and DSC Scans of Gas Saturated and Non-gas Saturated High Impact Polystyrene." Cellular Polymers 17, no. 6 (1998): 1–17. http://dx.doi.org/10.1177/0262489319981706003.

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A series of high impact polystyrene (HIPS) specimens was prepared under different processing conditions to study the effects of CO2 sorption and annealing conditions on thermal response and mechanical properties of gasified and/or foamed materials. The process variables included gas-saturation, non gas-saturation, foaming temperature and annealing temperature. In this study, samples were first saturated with CO2, foamed if necessary then desorbed, and finally followed by sub-Tg annealing. The thermal response and mechanical properties followed the opposite trend of materials which were first sub-Tg annealed then exposed to CO2 performed by previous workers. This suggests that gas sorption and annealing produce opposite effects. Gas sorption followed by annealing may annul a portion of the gas sorption effect, and vice versa. The glass transition temperature is an important factor that affects the trend of the results of mechanical properties in the foamed then annealed materials.

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Zhu, Jiwu, Rui Jia, Xiaorang Tian, et al. "Characterization of the defect in CIGSe solar cell by admittance spectroscopy." AIP Advances 13, no. 2 (2023): 025264. http://dx.doi.org/10.1063/5.0141107.

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In this work, we used admittance spectroscopy to accurately characterize the defect energy distribution of defects in the absorption layer of a CuIn1−xGaxSe2 (CIGSe) solar cell. We found that the dark current of the CIGSe cell decreased by an order of magnitude, and its ideality factor dropped from 2.16 to 1.85 after annealing. The capacitance of the CIGSe solar cell before annealing was higher than that after annealing under reverse bias. Moreover, a higher free carrier concentration was found in the absorption layer of the cell before annealing. The results of our tests show that the built-in electric voltages of the CIGSe cell before and after annealing were 0.52 and 0.64 V, respectively. After annealing, the activation energy of defects in the absorption layer decreased, and their concentration remained almost constant, as measured by admittance spectroscopy. The decrease of the defect activation energy indicated a corresponding decrease in the Shockley–Read–Hall recombination probability of defects in the present cell; hence, the increase of the open circuit voltage and parallel resistance of the CIGSe solar cells after annealing resulted in improved performance.

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Gao, Jian, Yiqi Lv, Minghao Liu, Shaowei Cai, and Feifei Ma. "Improving Simulated Annealing for Clique Partitioning Problems." Journal of Artificial Intelligence Research 74 (July 27, 2022): 1485–513. http://dx.doi.org/10.1613/jair.1.13382.

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The Clique Partitioning Problem (CPP) is essential in graph theory with a number of important applications. Due to its NP-hardness, efficient algorithms for solving this problem are very crucial for practical purposes, and simulated annealing is proved to be effective in state-of-the-art CPP algorithms. However, to make simulated annealing more efficient to solve large-scale CPPs, in this paper, we propose a new iterated simulated annealing algorithm. Several methods are proposed in our algorithm to improve simulated annealing. First, a new configuration checking strategy based on timestamp is presented and incorporated into simulated annealing to avoid search cycles. Afterwards, to enhance the local search ability of simulated annealing and speed up convergence, we combine our simulated annealing with a descent search method to solve the CPP. This method further improves solutions found by simulated annealing, and thus compensates for the local search effect. To further accelerate the convergence speed, we introduce a shrinking factor to decline initial temperature and then propose an iterated local search algorithm based on simulated annealing. Additionally, a restart strategy is adopted when the search procedure converges. Extensive experiments on benchmark instances of the CPP were carried out, and the results suggest that the proposed simulated annealing algorithm outperforms all the existing heuristic algorithms, including five state-of-the-art algorithms. Thus the best-known solutions for 34 instances out of 94 are updated. We also conduct comparative analyses of the proposed strategies and show their effectiveness.

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TAN, SHIH-WEI, and SHIH-WEN LAI. "EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AlGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT." Surface Review and Letters 19, no. 04 (2012): 1250043. http://dx.doi.org/10.1142/s0218625x12500436.

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Characterization and modeling analysis on both ideality factor of the collector current (η C ) and the base current (η B ) have higher than the excepted values of 1.0 and 2.0, respectively, for npn Al GaN/GaN heterojunction bipolar transistors (HBTs) have been reported. We employ the rapid thermal process annealing (RTP-annealing) to modify the base parasitical Schottky diode (called A-HBTs) after the as-deposited Ni/Au bilayers on the base layer for electrode with no annealing (called N-HBTs) to compare with each other. For a HBT operated in Gummel-plot configuration, experimental and modeling results indicate that the base parasitical Schottky diode (BPSD) causes the base current (I B ) and collector current (I C ) with high ideality factor and raise the base-emitter voltage (V BE ) to higher operation point, and therefore lead to more power consumption. Furthermore, the extended Ebers–Moll equivalent-circuit model together with the extracted device parameters provided simulated results that were in a good agreement with experimental ones.

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Kao, Chyuan-Haur, Kuan-Lin Chen, Jun-Ru Chen, et al. "Comparison of Magnesium and Titanium Doping on Material Properties and pH Sensing Performance on Sb2O3 Membranes in Electrolyte-Insulator-Semiconductor Structure." Membranes 12, no. 1 (2021): 25. http://dx.doi.org/10.3390/membranes12010025.

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In this research, electrolyte-insulator-semiconductor (EIS) capacitors with Sb2O3 sensing membranes were fabricated. The results indicate that Mg doping and Ti-doped Sb2O3 membranes with appropriate annealing had improved material quality and sensing performance. Multiple material characterizations and sensing measurements of Mg-doped and Ti doping on Sb2O3 sensing membranes were conducted, including of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). These detailed studies indicate that silicate and defects in the membrane could be suppressed by doping and annealing. Moreover, compactness enhancement, crystallization and grainization, which reinforced the surface sites on the membrane and boosted the sensing factor, could be achieved by doping and annealing. Among all of the samples, Mg doped membrane with annealing at 400 °C had the most preferable material properties and sensing behaviors. Mg-doped Sb2O3-based with appropriate annealing are promising for future industrial ionsensing devices and for possible integration with Sb2O3-based semiconductor devices.

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Yue, Yang, Maosong Sun, Jie Chen, et al. "Improvement of Crystal Quality of AlN Films with Different Polarities by Annealing at High Temperature." Micromachines 13, no. 1 (2022): 129. http://dx.doi.org/10.3390/mi13010129.

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High-quality AlN film is a key factor affecting the performance of deep-ultraviolet optoelectronic devices. In this work, high-temperature annealing technology in a nitrogen atmosphere was used to improve the quality of AlN films with different polarities grown by magnetron sputtering. After annealing at 1400–1650 °C, the crystal quality of the AlN films was improved. However, there was a gap between the quality of non-polar and polar films. In addition, compared with the semi-polar film, the quality of the non-polar film was more easily improved by annealing. The anisotropy of both the semi-polar and non-polar films decreased with increasing annealing temperature. The results of Raman spectroscopy, scanning electron microscopy and X-ray photoelectron spectroscopy revealed that the annihilation of impurities and grain boundaries during the annealing process were responsible for the improvement of crystal quality and the differences between the films with different polarities.

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Spera, Monia, Giuseppe Greco, Domenico Corso, et al. "Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings." Materials 12, no. 21 (2019): 3468. http://dx.doi.org/10.3390/ma12213468.

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This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °C, 1175 °C, and 1825 °C. Under these post-implantation annealing conditions, the electrical activation of the Al dopant species increased from 39% to 56%. The Ti/Al/Ni contacts showed an Ohmic behavior after annealing at 950 °C. The specific contact resistance ρc could be lowered by a factor of 2.6 with the increase of the post-implantation annealing temperature. The result can be useful for application in device fabrication. Moreover, the dependence of ρc on the active acceptor concentration followed the thermionic field emission model, with a barrier height of 0.63 eV.

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Zhao, Xiaohui, Haifeng Wang, Shufang Wang, Dogheche Elhadj, Jianglong Wang, and Guangsheng Fu. "Enhancement of thermoelectric power factor in NaxCoO2/Au multilayers." RSC Adv. 4, no. 100 (2014): 57148–52. http://dx.doi.org/10.1039/c4ra07319c.

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NaxCoO2/Au thin film multilayers, with a thickness of the Au layer of 0.5–12 nm, have been fabricated on c-Al2O3 by post annealing of the CoO/Au thin film multilayers in Na vapor at high temperature in air.

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Chen, Qin Miao, Xiao Ming Dou, Zhen Qing Li, Shu Yi Cheng, and Song Lin Zhuang. "Preparation of Cu₂ZnSnS₄ Film by Printing Process for Low-Cost Solar Cell." Advanced Materials Research 335-336 (September 2011): 1406–11. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.1406.

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Cu2ZnSnS4(CZTS) film was prepared by screen printing process with the advantages of simple, high-effective and cost-effective. The annealing effects on the screen printed CZTS films were studied. It was found that the crystallinity of the CZTS can be effectively improved by the annealing process, whereas overlong annealing can also introduce defects to the CZTS. The bandgap value of the CZTS is about 1.4 eV. The short-circuit current density, open-circuit voltage, fill factor and conversion efficiency of the best solar cell with superstrate structure of Carbon/CZTS/In2S3/TiO2/FTO glass (without using any vacuum conditions) are 6.20 mA/cm2, 290 mV, 0.29 and 0.53%, respectively.

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Jin, Zi Li, Hui Ping Ren, Li Zhen Guo, and Sheng Mei Ma. "Effects of Annealing Condition on Texture and Deep Drawing Properties of Cold-Rolling Low Carbon Sheet Steel Based on CSP." Applied Mechanics and Materials 121-126 (October 2011): 221–25. http://dx.doi.org/10.4028/www.scientific.net/amm.121-126.221.

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With the help of electron backscatter diffraction (EBSD ) and orientation distribution function (ODF) analysis, experiments of the different batch annealing were conducted to give an study of recrystallization and texture of Cold-rolling Low Carbon sheet steel based on CSP , and the relationship between initial isothermal temperature and drawing properties has been investigated. The recrystallization soon finished the grains during annealing produce relatively strong {111} and {111} texture，at this temperature region as the initial isothermal temperature, the double isothermal cover annealing process design, enabling access to a strong favorable texture and uniform pancake grains, and the proper temperature is the key control factor level.

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Abdullah, Mohd Hanapiah, Mohamad Hafiz Mamat, and Mohammad Rusop Mahmood. "Effects of Annealling Treatment on the Properties of TiO₂/ZnO Thin Film Prepared by Simultaneous RF-Magnetron Sputtering." Advanced Materials Research 832 (November 2013): 573–78. http://dx.doi.org/10.4028/www.scientific.net/amr.832.573.

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In this work, TiO2/ZnO nanocomposite films were prepared by simultaneous RF-magnetron sputtering of ZnO and TiO2targets. The influences of annealing temperature on the properties of the TiO2/ZnO films were investigated. The crystal structure of the deposited TiO2/ZnO films was hexagonal wurtzite at (002) and (101) peaks and the films were highly oriented along the c-axis perpendicular to the substrate. The photoluminescence (PL) spectrum reveals the appearance of two emission peaks from the deposited film that are centred at 384 and 591 nm. The structural, electrical, and optical properties of TiO2/ZnO films were strongly dependent on the annealing temperature. With increasing of the annealing temperature, the optical properties (i.e., UV, transmittance, energy band-gap and crystalline quality) were also improved. However, when the annealing is relatively high (≥ 500° C), the intensity of the optical properties and crystalline quality slightly decreases. The annealing temperature of (≥ 500° C) becoming the threshold temperature limits for the TiO2/ZnO film. The results obtained herein suggest that selecting the appropriate annealing temperature become a key factor for tuning the most desired properties from the as-prepared TiO2/ZnO thin films.

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Rothwell, S. W., W. A. Grasser, H. N. Baker, and D. B. Murphy. "The relative contributions of polymer annealing and subunit exchange to microtubule dynamics in vitro." Journal of Cell Biology 105, no. 2 (1987): 863–74. http://dx.doi.org/10.1083/jcb.105.2.863.

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Microtubules that are free of microtubule-associated protein undergo dynamic changes at steady state, becoming longer but fewer in number with time through a process which was previously assumed to be based entirely on mechanisms of subunit exchange at polymer ends. However, we recently demonstrated that brain and erythrocyte microtubules are capable of joining end-to-end and suggested that polymer annealing may also affect the dynamic behavior of microtubules in vitro (Rothwell, S. W., W. A. Grasser, and D. B. Murphy, 1986, J. Cell Biol. 102:619-627). In the present study, we first show that annealing is a general property of cytoplasmic microtubules and is not a specialized characteristic of erythrocyte microtubules by documenting annealing between tryosinolated and detyrosinolated brain microtubules. We then examine the contributions of polymer annealing and subunit exchange to microtubule dynamics by analyzing the composition and length of individual polymers in a mixture of brain and erythrocyte microtubules by immunoelectron microscopy. In concentrated preparations of short-length microtubules at polymer-mass steady state, annealing was observed to be the principal factor responsible for the increase in polymer length, whereas annealing and subunit exchange contributed about equally to the reduction in microtubule number.

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Yunita, R., F. N. Rosadi, Jamsari, and A. Azizah. "Optimization of annealing temperature for amplification of the exon one region of the HPPD gene in HA1 accession sunflowers." IOP Conference Series: Earth and Environmental Science 1160, no. 1 (2023): 012002. http://dx.doi.org/10.1088/1755-1315/1160/1/012002.

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Abstract The HPPD gene is one of the genes that is actively involved in the biosynthesis of tocopherol, which is the main component of Vitamin E. Sunflower is raw materials for natural medicine since their oil contains vitamin E. To obtain complete information regarding the whole sequences of the 4-Hydroxyphenylpyruvate Dioxygenase (HPPD) gene in sunflower accession HA1, the exon one region needs to be identified using a PCR-based method. One factor affecting the success rate of PCR is the annealing temperature. The optimum annealing temperature will produce specific target gene products. This study aimed to determine the optimal temperature for amplifying the exon 1 region of the HPPD gene using the PCR method. This research began with primer design activities, followed by in vitro amplification (PCR), then optimization of annealing temperature using gradient PCR. The results showed that the optimum temperature for amplifying fragment one was an annealing temperature of 53 °C, fragment two was at an annealing temperature of 45 °C, and fragment three had an annealing temperature of 57 °C with the expected size of PCR products are 306 bp, 506 bp, and 534 bp respectively.

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Pandey, Vivek, Lavanya Sanagavarapu, and Rajiv O. Dusane. "Fabrication of high gauge factor piezoresistive nanocrystalline Si film using aluminum-induced crystallization of HWCVD deposited a-Si:H." Canadian Journal of Physics 92, no. 7/8 (2014): 749–52. http://dx.doi.org/10.1139/cjp-2013-0612.

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Aluminum-induced crystallization (AIC) has been used to achieve device quality nc-Si thin films, at annealing temperatures ranging from 300 to 450 °C, exhibiting electronic properties favourable for piezoresistive microelectromechanical systems sensor application. The nc-Si films obtained by AIC at an annealing temperature of 400 °C showed hole concentration of the order of 1018 cm−3 and the Hall mobility was measured to be 13.5 cm2V−1s−1. The films were subjected to piezoresistive gauge factor measurement and a gauge factor of 43 was recorded in the longitudinal mode under a sample scheme of constant force over the entire sample area, which is the highest reported to date for thin film nc-Si.

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Fornasiero, Quentin, Nicolas Defrance, Sylvie Lepilliet, et al. "Fabrication, and Direct Current and cryogenic analysis of SF₆-treated AlGaN/GaN Schottky barrier diodes." Journal of Vacuum Science & Technology B 41, no. 1 (2023): 012202. http://dx.doi.org/10.1116/6.0002125.

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Schottky contacts on fluorine implanted AlGaN/GaN heterostructures with the ideality factor close to unity and low on-voltage threshold are presented in this paper. An SF6 plasma anode pretreatment followed by a specific low-temperature annealing is also compared to a nonannealed sample. In addition, physical-model parameters are extracted by means of cryogenic temperature measurements to understand the conduction mechanisms involved in annealed diodes, showing better DC performances than their nonannealed counterparts. Furthermore, annealing induces a decrease of the ideality factor, which sets the field-enhanced thermionic emission as the main conduction mechanism, and reduces the tunneling reverse current leakage. This effect is attributed to the recovery of the plasma-induced damages.

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Kang, Seongsu, and Seonbong Lee. "Optimizing the Manufacturing Process Control of Si-Based Soft Magnetic Composites." Materials 18, no. 10 (2025): 2321. https://doi.org/10.3390/ma18102321.

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This study attempts to enhance the formability and electromagnetic properties of Fe-Si-based soft magnetic composites via process parameter optimization. Two silicon compositions (5.0 and 6.5 wt.%) were examined to determine their influence on density, internal stress, microstructure stability, and magnetic properties using a factorial design comprising 96 different condition combinations. A Pearson correlation analysis revealed a negative relationship between Si content and formability, while magnetic permeability increased with higher Si content. The 5.0 wt.% Si samples exhibited superior density (7.42 g/cm3 vs. 7.28 g/cm3), uniform microstructure, and coating stability. Conversely, the 6.5 wt.% Si samples achieved better permeability (126 at 10 kHz) than 5.0 wt.% Si samples but exhibited higher internal stress, uneven compaction, and thicker insulation layers (~400 nm vs. <10 nm). Scanning electron microscopy and transmission electron microscopy analyses identified necking and damage to the insulation layer. X-ray diffraction verified the stability of the Fe1.6Si0.4 phase after the forming and annealing processes. Secondary molding temperature exhibited the most significant impact on densification, and annealing generally degraded the quality factor (Q-factor). The highest Q-factor value (7.18 at 10 kHz), indicating lower core loss, was observed in the 5.0 wt.% Si samples without annealing.

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Journal articles on the topic 'Annealing factor'

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