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Dissertations / Theses on the topic 'Annealing of metals. Thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

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1

Yoon, Chang-Kyu. "Evolution of annealing twins in sputtered Cu thin films." Pullman, Wash. : Washington State University, 2009. http://www.dissertations.wsu.edu/Thesis/Summer2009/C_Yoon_070609.pdf.

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Thesis (M.S. in materials science and engineering)--Washington State University, August 2009.<br>Title from PDF title page (viewed on Aug. 7, 2009). "School of Mechanical and Materials Engineering." Includes bibliographical references (p. 44-46).

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2

Wang, Rongxin. "Preparation and post-annealing effects on the optical properties of indium tin oxide thin films." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B31546171.

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3

Wang, Rongxin, and 王榮新. "Preparation and post-annealing effects on the optical properties of indium tin oxide thin films." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B31546171.

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4

Wu, Yi Sun. "Fabrication of in-situ MgB₂ thin films on Al₂O₃ substrate using off-axis PLD technique." Access electronically, 2007. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20080917.103857/index.html.

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5

Elhamali, S. O. "Material deposition and laser annealing of metal oxide thin films for electronics fabricated at low temperature." Thesis, Nottingham Trent University, 2016. http://irep.ntu.ac.uk/id/eprint/29062/.

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With an aim to investigate methods to realise low thermal-budget fabrication of aluminium doped zinc oxide (AZO) and indium gallium zinc oxide (IGZO) thin films, a dual step fabrication process was studied in this research. Initially, an experimental programme was undertaken to deposit AZO and IGZO films by radio frequency (RF) magnetron sputtering with no external substrate heating and at a wide range of deposition parameters including oxygen to argon ratio, RF power, and sputtering pressure. Thereafter, the samples were subjected to post-depositing annealing in air at ambient temperature uti

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6

Woods, Keenan. "Amorphous Metal Oxide Thin Films from Aqueous Precursors: New Routes to High-κ Dielectrics, Impact of Annealing Atmosphere Humidity, and Elucidation of Non-uniform Composition Profiles". Thesis, University of Oregon, 2018. http://hdl.handle.net/1794/23173.

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Metal oxide thin films serve as critical components in many modern technologies, including microelectronic devices. Industrial state-of-the-art production utilizes vapor-phase techniques to make high-quality (dense, smooth, uniform) thin film materials. However, vapor-phase techniques require large energy inputs and expensive equipment and precursors. Solution-phase routes to metal oxides have attracted great interest as cost-effective alternatives to vapor-phase methods and also offer the potential of large-area coverage, facile control of metal composition, and low-temperature processing.

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7

Zhang, Bo. "Improvement of metal induced crystallization process and novel post-annealing technologies /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20ZHANG.

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8

Verma, Harsh Anand 1980. "Scanned pulsed laser annealing of Cu thin films." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/30257.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, February 2005.<br>Includes bibliographical references (leaves 51-52).<br>As the microelectronics industry has moved to Cu as the conductor material, there has been much research into microstructure control in Cu thin films, primarily because grain sizes affect resistivity. Also with Cu-based interconnects, interfacial electromigration is the dominant mechanism, and therefore the crystallographic orientation of the grains could influence reliability. Scanned laser annealing can, in principle, be us

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9

Modi, Arvind. "Direct Immersion Annealing of Block Copolymer Thin Films." University of Akron / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=akron1471542724.

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10

Duff, Daniel Gordon. "Colloidal solutions and thin films of metals." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333275.

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11

Brombacher, Christoph. "Rapid thermal annealing of FePt and FePt/Cu thin films." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-64907.

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Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO2 particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to

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12

Mahmood, Fazal. "A study of thin silicide films formed by electron beam annealing." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386133.

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13

Garman, Christopher James. "Electrical characterization of thin film nanostructure templates." Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=2188.

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Thesis (M.S.)--West Virginia University, 2001.<br>Title from document title page. Document formatted into pages; contains vi, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 57-61).

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14

Tillin, Martin David. "Dielectric response of metals using optically excited surface plasmon-polaritons." Thesis, University of Exeter, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.236520.

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15

Lin, Keng-Yu. "Thin films for thermoeletric applications." Thesis, Linköpings universitet, Tunnfilmsfysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109106.

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Global warming and developments of alternative energy technologies have become important issues nowadays. Subsequently, the concept of energy harvesting is rising because of its ability of transferring waste energy into usable energy. Thermoelectric devices play a role in this field since there is tremendous waste heat existing in our lives, such as heat from engines, generators, stoves, computers, etc. Thermoelectric devices can extract the waste heat and turn them into electricity. Moreover, the reverse thermoelectric phenomenon has the function of cooling which can be applied to refrigerato

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16

Todi, Ravi. "INVESTIGATIONS ON RF SPUTTER DEPOSITED SICN THIN FILMS FOR MEMS APPLICATIONS." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3330.

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With the rapid increase in miniaturization of mechanical components, the need for a hard, protective coatings is of great importance. In this study we investigate some of the mechanical, chemical and physical properties of the SiCN thin films. Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a RF magnetron sputtering system using a powder pressed SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties such as

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17

Kaplan, Maciej. "Thermal Stability of Amorphous MoSiZr Thin Films." Thesis, Uppsala universitet, Materialfysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-298165.

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Metallic glass is a class of materials which have a disordered structure of atoms, due to this, glasses lack grains and grain boundaries, which are present in their crystalline counterparts. Metallic glasses have many interesting properties worth investigating, such as high corrosion resistance or high mechanical strength. However, metallic glasses are metastable and will therefore crystallise if heated above the crystallisation temperature. MoSiZr alloys have been studied and to gain knowledge of how the composition affects the crystallisation temperature, which enables further improvement of

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18

Cotier, Bradley Neville. "Fullerene nanostructures, monolayers and thin films." Thesis, University of Nottingham, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342471.

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19

Basutkar, Monali N. "Directed Self-Assembly of Nanostructured Block Copolymer Thin Films via Dynamic Thermal Annealing." University of Akron / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=akron1532522639938773.

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20

Giridhar, Jayaramachandran. "Preparation and characterization of Mo/Al layered thin films." Thesis, Virginia Tech, 1987. http://hdl.handle.net/10919/40953.

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<p>The fabrication of bilayer and multilayer Mo/Al thin films using a conventional multi-target rf-diode sputter deposition system was studied. The films were deposited on glass and Si( 100) substrates. The as-deposited films were charactexized with respect to their structure and composition profiles using X-Ray diifraction, AES, SEM, TEM, and RBS techniques. The as-deposited bilayer films were of good quality with an interface thickness of about 200 Ã . They were annealed at different temperatures in the range of 300-600Â°C for different times. Diffusional intermixing and phase changes were m

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21

Liu, Boer. "THERMAL ANNEALING EFFECT ON UNENTANGLED STAR-SHAPED POLYSTYRENE RESIDUAL LAYER." University of Akron / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=akron1525261861391343.

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22

Zhang, Yue Zhang. "Phase Separation of Polymer-grafted Nanoparticle blend Thin Films." University of Akron / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=akron1494885057468539.

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23

Durkaya, Goksel. "Electrical And Structural Characterization Of Bismuth Thin Films." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606374/index.pdf.

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Electrical and structural properties of Bismuth thin films were studied simultaneously. Electrical properties of the Bismuth thin films have been characterized by measuring temperature dependent conductivity and Hall effect. Structural analysis were carried out by X-ray diffraction technique and using a room temperature Atomic Force Microscope (RT-AFM).

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24

O'Brien, David F. "Annealing study of YBa2Cu3Ox thin films deposited by chemical vapor deposition on ceramic fiber tows." Thesis, Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/8650.

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25

Aghamohammadzadeh, H. "'5'7Fe Moessbauer studies of Fe-Si based amorphous ferromagnetic ribbons and thin films." Thesis, University of Sheffield, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310756.

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26

"Fabrication of Fe3O4 and ZnxFe3-xO4 thin films and annealing effects." 2004. http://library.cuhk.edu.hk/record=b5892010.

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Wong Hoi Chun = Fe3O4和 ZnxFe3-xO4薄膜的制備及其熱處理效應 / 黃凱俊.<br>On t.p. "x" is subscript<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2004.<br>Includes bibliographical references.<br>Text in English; abstracts in English and Chinese.<br>Wong Hoi Chun = Fe3O4 he ZnxFe3-xO4 bo mo de zhi bei ji qi re chu li xiao ying / Huang Kaijun.<br>Acknowledgement --- p.i<br>Abstract --- p.ii<br>論文摘要 --- p.iii<br>Table of contents --- p.iv<br>List of Figures --- p.vii<br>List of Tables --- p.xiii<br>Chapter Chapter 1 --- Introduction<br>Chapter 1.1 --- Introduction to magnetite and zinc ferrite<br>Chap

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27

"Vacuum annealing effect of Fe₃₋xZnxO₄ thin films and trilayer magnetic tunneling junction." 2006. http://library.cuhk.edu.hk/record=b5893053.

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Lee Wai Tak Joseph = Fe₃₋xZnxO₄的真空熱處理效應及磁隧道結 / 李懷德.<br>On t.p. "-x" and "x" is subscript.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2006.<br>Includes bibliographical references.<br>Text in English; abstracts in English and Chinese.<br>Lee Wai Tak Joseph = Fe₃₋xZnxO₄ de zhen kong re chu li xiao ying ji ci sui dao jie / Li Huaide.<br>Acknowledgement --- p.i<br>Abstract --- p.ii<br>論文摘要 --- p.iii<br>Table of contents --- p.iv<br>List of Figures --- p.ix<br>List of Tables --- p.xiv<br>Table of Contents<br>Chapter Chapter 1 --- Introduction<br>Chapter 1.1 --- Introduction to Magne

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28

"Thermal Processing and Microwave Processing of Mixed-Oxide Thin Films." Doctoral diss., 2011. http://hdl.handle.net/2286/R.I.9343.

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abstract: Amorphous oxide semiconductors are promising new materials for various optoelectronic applications. In this study, improved electrical and optical properties upon thermal and microwave processing of mixed-oxide semiconductors are reported. First, arsenic-doped silicon was used as a model system to understand susceptor-assisted microwave annealing. Mixed oxide semiconductor films of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) were deposited by room-temperature RF sputtering on flexible polymer substrates. Thermal annealing in different environments - air, vacuum and o

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29

Guihard, Matthieu. "Effets des recuits ultra-rapides (10^5 K/s) sur la formation des siliciures métalliques en phase solide." Thèse, 2015. http://hdl.handle.net/1866/13708.

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La synthèse de siliciures métalliques sous la forme de films ultra-minces demeure un enjeu majeur en technologie CMOS. Le contrôle du budget thermique, afin de limiter la diffusion des dopants, est essentiel. Des techniques de recuit ultra-rapide sont alors couramment utilisées. Dans ce contexte, la technique de nanocalorimétrie est employée afin d'étudier, in situ, la formation en phase solide des siliciures de Ni à des taux de chauffage aussi élevés que 10^5 K/s. Des films de Ni, compris entre 9.3 et 0.3 nm sont déposés sur des calorimètres avec un substrat de a-Si ou de Si(100). Des mesures

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30

Song, Ruobing. "Spot-Beam Annealing of Thin Si Films." Thesis, 2021. https://doi.org/10.7916/d8-aq25-gp59.

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This dissertation documents the development and demonstration of a new laser crystallization process called spot-beam annealing (SBA). The SBA method is a partial-melting-based laser-annealing method, which converts as-deposited amorphous Si films into high-mobility TFT-enabling polycrystalline films. SBA builds on the thermally additive utilization of multiple short-lived low-energy ultra-high-frequency pulses, achieved via substantially overlapped scanning of a small spot beam to incrementally and gradually heat and partially melt the beam-irradiated region. After a brief review of o

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31

CHEN, WEN HSING, and 陳汶杏. "Argon Ion Laser Annealing of Electrodeposited CuInSe2 Thin Films." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/48849887117501717052.

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碩士<br>國立成功大學<br>化學系<br>87<br>Ploycrystalline CuInSe2(CIS) thin films were electrodeposited by constant potential electrolysis on molybdenum(Mo) sheet using CuCl2, InCl3, and SeO2 as electrolyte solution containing triethanolamine(TEA) as a complexing agent. The films were annealed in an inert atmosphere by an argon-ion laser operating on all green lines with the power and annealed time varied. The annealed CIS thin fillms were characterized by X-ray diffractometry(XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy(EDS). The maximum temperature-rise by different incide

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32

Jhang, Jia-Hong, and 張家宏. "Effects of annealing and selenization on CuInSe2 thin films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/m8amby.

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碩士<br>國立東華大學<br>電機工程學系<br>96<br>The effects of annealing on the copper indium diselenide films and of selenization process of the metallic precursors were studied. The CuInSe2 (CIS) films were annealed around H2Se atmosphere at different temperature and time to improve the crystallinity. The impacts of annealing conditions on the properties of CIS films were investigated. The metallic precursors of the Cu/In films for the selenization process were prepared using the electrodeposition method. The selenization conditions were optimized to improve the CIS film quality. During the selenizati

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33

Lin, Tzu-hsiang, and 林子翔. "Preparetion of CdS Thin Films by Spin Coating and The Effect of Annealing on CdS Thin Films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/13822359440816895467.

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碩士<br>國立成功大學<br>化學工程學系碩博士班<br>95<br>Light-emitting diodes (LEDs) have the advantages of no mercury pollution and high emission efficiency. Developments of LEDs not only serve to improve the disadvantages of traditional illuminants but also save the energy and protect the environment of the world. This research is aimed at the manufacture of quantum dot (QD) LED, make use the high luminescence efficiency and limit the quantum confinement effect to control the luminescence color of QD In this study, CdS quantum dots are synthesized by microwave method. The effect of annealing temperature and ti

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34

CHING-I, WENG, and 翁慶毅. "Effect of annealing temperature on Al-doped ZnO thin films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/31443783881392836157.

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碩士<br>明新科技大學<br>光電科技產業研發碩士專班<br>99<br>Abstract Zinc oxide (ZnO) thin films with a strong c-axis preferred orientation, obvious piezoelectric and piezo-optical effects, have been used in acousto-electric and acousto-optical devices. In this study, Aluminum-doped zinc oxide films were prepared by radio-frequency reactive sputtering on Corning 1737 glass substrates with ceramic targets (ZnO contained 2wt.% Al2O3 ). The properties of the AZO thin films have been measurement by X-ray diffraction (XRD), 4-point probe system, UV-vis spectrometer, Atomic force microscope (AFM) and Scanning electron mi

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35

Mai, Jing-Cheng, and 麥景程. "Copper oxide thin films prepared using a novel annealing processing." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/a55xhs.

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碩士<br>國立高雄應用科技大學<br>化學工程與材料工程系博碩士班<br>103<br>This study proposes a new annealing process to prepare copper oxide thin films using the atmospheric pressure plasma annealing. The thin films were coated on the glass substrate was used by sol-gel processing and then were annealed by atmospheric pressure plasma at 510℃ for 10 min for preparing CuO thin films. The copper oxide was obtained when the sol-gel derived thin films were annealed at N2-(5-20)%O2. The lattice parameter of the CuO thin films were a=0.467-0.470 nm, b=0.342-0.344 nm, c=0.512-0.516 nm and β=99.42 -99.74o . The CuO thin films are

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36

Chi-Huang and 黃麒. "Preparation of CuCrO2 thin films using atmospheric pressure plasma annealing." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/qhb34h.

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碩士<br>國立高雄應用科技大學<br>化學工程與材料工程系博碩士班<br>103<br>This study used the atmospheric pressure plasma annealing to prepare the CuCrO2 thin films with and without Mg-dopants. The thin films were coated on quartz substrates using the sol-gel process followed the atmospheric pressure plasma annealing with N2-(0-20%)O2 for 20 min for Mg-doped CuCrO2 thin films. The CuO and Cr2O3 phase appeared in N2-0%O2 ; however, a pure delafossite-CuCrO2 phase was detected at the N2-(3%-10%)O2.CuCrO2 and CuO phase appeared at N2-20%O2. The dense CuCrO2:Mg thin films was observed at the formation of the CuCrO2 phase. The

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37

YANG, SHUN-HSIANG, and 楊舜翔. "Iron Oxide Thin Films Prepared Using a Novel Annealing Processing." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/85pz64.

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碩士<br>國立高雄應用科技大學<br>化學工程與材料工程系博碩士班<br>104<br>In this study, iron oxide thin films were prepared by an atmospheric pressure plasma annealing. The first part, the thin films were coated on the glass substrate, and then specimens were dried at 1-5 days. After that, specimens were annealed using atmospheric pressure plasma with N2 (99.9%) at 500℃ for 20 minutes. The α-Fe2O3 phase can be formed at the atmospheric pressure plasma annealing when the specimen was dried at one day, and the γ-Fe2O3 phase is formed at dried specimens above two days. The thickness of the α-Fe2O3 thin film was 172 nm, and

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Hsu, Chih-Chieh, and 許智傑. "Effects of annealing and plasma treatment on ZnO thin films." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/z4jnec.

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碩士<br>中原大學<br>物理研究所<br>105<br>In this study, ZnO, AZO (Al-doped ZnO) and NAZO (N-Al co-doped ZnO) precursor solutions were prepared by the sol-gel method. Then the solutions were spin-coated on quartz substrates to form thin films. The surface morphology and crystalline structure of the thin films were obtained by atomic force microscopy (AFM) and X-ray diffraction (XRD). The photoluminescence spectroscopy reveals the energy bandgap and defects of the thin films. The resistivity, carrier concentration and mobility of the thin films were measured by Hall effect measurement. The results show tha

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OU, JIAN-HONG, and 歐建宏. "Preparation of CuAlO2 Thin Films Using Atmospheric Pressure Plasma Annealing." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/7ggt54.

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碩士<br>國立高雄應用科技大學<br>化學工程與材料工程系博碩士班<br>106<br>In this study, the P-type transparent conductive CuAlO2 thin films were prepared using atmospheric pressure plasma annealing. The sol precursor solution had copper and aluminum sources, and coated on quartz substrate by the spin-coating. The specimens were annealed using atmospheric pressure plasma annealing at 700-800℃ for 10 and 20 minutes. The CuO and CuAl2O4 phases were found at 700℃ annealing, and the purer CuAlO2 of R3 ̅m space group (JCDPS #35-1401) was observed after 750℃ annealing by N2-10% O2 atmospheric pressure plasma for 10 minutes. The

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40

Brombacher, Christoph. "Rapid thermal annealing of FePt and FePt/Cu thin films." Doctoral thesis, 2010. https://monarch.qucosa.de/id/qucosa%3A19459.

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Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO2 particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to

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JHANG, SHIH-MIN, and 張詩敏. "Annealing Effect on Magnetic Properties of TbFeCo Alloy Thin Films." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/685q5p.

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碩士<br>國立雲林科技大學<br>材料科技研究所<br>107<br>Among various perpendicular magnetic anisotropy (PMA) materials, amorphous rare earth-transition metal alloys (RE-TM alloys) have attracted great interest because of their advantages of tunable magnetic properties and large PMA strength. In this study, the effects of Tb composition ratio, annealing temperature and annealing rate on SiOx / Ta 10nm / TbFeCo 10nm / MgO 4nm (A-structure) and SiOx / TbFeCo 10nm / Ta 10nm / MgO 4nm (B-structure) were investigated. The different Tb powers (40 W~100 W) were adjusted to deposit different Tb composition alloys. The A-

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42

TSENG, YAW-SHING, and 曾曜星. "The Fabrication of Polysilicon Thin Film Transistors by Excimer Laser Annealing and Metal Induced Crystallization." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/23876115406024060577.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>89<br>The material properties and device characteristics of polysilicon thin film transistor are investigated. Polysilicon material has been prepared by XeCl excimer laser annealing (ELA), metal induced crystallization (MIC), and metal induced lateral crystallization (MILC). The polysilicon material is characteristized using Raman spectrum, transmission electron microscopy (TEM), and transmission electron diffraction (TED) patterns. It is found that the polysilicon formed by nickel induced lateral crystallization has larger average grain size and more uniform dist

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Chen, Chu-Hsiang, and 陳朱祥. "Room temperature ferromagnetism of TiOx thin films by thermal annealing of sputtered Ti films." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/n5c23u.

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碩士<br>國立東華大學<br>材料科學與工程學系<br>102<br>In this research, a series of Ti thin films of 30-120 nm in thickness sputtering a Ti target(99.995%) in an Ar plasma were deposited by using a DC magnetron sputtering system. The Ti thin films on silicon substrate were annealed first in air at 300℃ and then annealed again in H2 at 300℃ to study the relationship between the composition, structure and room-temperature ferromagnetism(FM) properties. In this research, the structural properties of the Ti ﬁlms were obtained using XRD, SEM and AFM techniques. The composition and binding energy of the Ti ﬁlms were

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Kuo, Liang-Tai, and 郭良泰. "The Preparation of Thin（≦6.0nm）Oxynitride Films with N2O Plasma Annealing." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/93769802748406141430.

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碩士<br>國立交通大學<br>電子工程系<br>89<br>In this thesis, we present a systematic study of interpoly LPCVD nitride and gate LPCVD nitride with the treatment of N2O plasma annealing and RTAN2O. The treatment of N2O plasma annealing or RTAN2O can cause reoxidation of the nitride film and form an oxynitride film or a nitride/oxide (N/O) stack film. Therefore, the samples with RTAN2O or N2O plasma annealing has higher breakdown field, lower leakage current, longer time-to-breakdown, and smaller gate voltage shift than the control samples, and the performance gets better as the increase of power for N2O plasm

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CHANG, HUNG-CHENG, and 張宏丞. "Preparation of CuFeO2 thin films using an atmospheric pressure plasma annealing." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/5g3ngn.

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碩士<br>國立高雄應用科技大學<br>化學工程與材料工程系碩士在職專班<br>104<br>In this study, Cu-Fe-O thin films were deposited onto a quartz substrate with a sol-gel process and then specimens were annealed using atmospheric pressure plasma between 500℃ and 750℃ with N2-0%O2 to N2-20%O2. Single delafossite-CuFeO2 phase can be formed at 550℃ at N2-3%O2, at 600℃ at N2-3%O2, at 650℃ at N2-3%O2 and N2-5%O2, and at 700℃ at N2-(3-10%)O2. The CuFeO2 thin films displayed two intense Raman active modes at 348-349 cm-1 (Eg) and 687-688 cm-1 (Ag) respectively , the thickness of obtained CuFeO2 thin films were 106-184 nm. The maximum t

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Huang, Yi-Hsuan, and 黃怡萱. "Effect of annealing on the microstructure of MnBi alloy thin films." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/7twu24.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>106<br>The composite films of Ag/MnBi on Si substrate was prepared by dual ion-beam deposition technique. The structural and magnetic properties of the composite films were studied by X-ray diffraction (XRD) , transmission electron microsopy (TEM) , Vibrating sample magnetometer (VSM) ,respectively . XRD results have shown that MnBi layer of H.C.P with a＝4.27 Å、c＝6.12 Å, Ag layer consisted of F.C.C with a=4.05Å . TEM results have shown that the grain size of polycrystalline composite film range from 3~14 nm. After annealing , we can find from TEM results that Ag l

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Lin, Pao-Ming, and 林保銘. "Effects of annealing and plasma treatments on AZO-GO thin films." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/462t95.

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碩士<br>中原大學<br>物理研究所<br>107<br>In this study, the sol-gel method was used to synthesize AZO (Al-doped ZnO) and AZO-GO (graphene oxide) precursor solutions. The solutions were then spin-coated on quartz substrates to form the thin films. The surface morphology and crystal structure of the thin films were obtained by atomic force microscopy (AFM) and X-ray diffraction (XRD). Raman spectroscopy was used to discover the presence of reduced graphene oxide (rGO). The photoluminescence (PL) spectroscopy reveals the energy gap and defects of the thin films. The electronic properties of the thin films w

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Huang, Wei-Han, and 黃瑋翰. "Effects of Solvent Annealing on the Nanostructure of Supramolecular Thin Films." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/45603380483122994001.

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碩士<br>國立臺灣大學<br>高分子科學與工程學研究所<br>98<br>Block copolymers (BCP) and supramolecules assembly (SMA) have drawn intense attention since they offer possibilities to produce nanoscale materials with controllable morphology. Several methods, such as electric field alignment, photo-responsive, thermal annealing and solvent annealing, have been used to align BCP nanostructures. In this study, a simple approach to control the microdomain orientation of BCP-based supramolecular thin films has been investigated. The approach involves the use of a variety of solvents with different solubility parameters to a

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Chen, Pei-Nung, and 陳培儂. "Preparation and post-annealing of ZrCuAgAl thin films by unbalanced magnetron sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/39128962761596028996.

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碩士<br>國立清華大學<br>工程與系統科學系<br>99<br>The purpose of this study is to investigate the effect of post-annealing and substrate bias on the mechanical properties and corrosion behavior of Zr-Cu-Ag-Al metallic films. The metallic films were deposited on p-type (100) Si wafer and 304 stainless steel substrates using unbalanced magnetron sputtering. The Zr-Cu-Ag-Al metallic glass (MG) films were deposited at room temperature. The compositions of the MG thin films were uniformly distributed through thickness; however, Ag composition in the films was significantly lower than that in the sputtering target,

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Wei-DaWang and 王威達. "Study of CuIn1-xGaxSe2 Homojunction Formation by Annealing ZnS/CIGS Thin Films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/14985190371096528351.

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