Log in

Relevant bibliographies by topics / Annealing of metals. Thin films / Journal articles

To see the other types of publications on this topic, follow the link: Annealing of metals. Thin films.

Journal articles on the topic 'Annealing of metals. Thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Annealing of metals. Thin films.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Gao, ChengXiong, Shuhong Sun, Jinkun Liu, Tao Shen, and Yan Zhu. "Synthesis of magnetron sputtered AgBiS2 thin films." Functional Materials Letters 14, no. 04 (2021): 2150017. http://dx.doi.org/10.1142/s179360472150017x.

Full text

Abstract:

AgBiS2 films were prepared by direct current magnetron sputtering method by depositing atom ratio 1:1 of silver bismuth metal precursor on a common sodium-calcium glass substrate by rapid annealing under sulfur and nitrogen atmosphere. The annealing process was obtained by changing the annealing temperature and time. The films were characterized by XRD, UV-Vis, SEM, AFM, XPS. AgBiS2 thin films were grown on the substrate through sulfide annealing. After annealing at 475[Formula: see text]C for 30 min, the surface of the film is smooth and the roughness is the smallest. The average grain size g

APA, Harvard, Vancouver, ISO, and other styles

2

Simões, Sonia, Rosa Calinas, P. J. Ferreira, M. Teresa Vieira, Filomena Viana, and Manuel F. Vieira. "Effect of Annealing Conditions on the Grain Size of Nanocrystalline Copper Thin Films." Materials Science Forum 587-588 (June 2008): 483–87. http://dx.doi.org/10.4028/www.scientific.net/msf.587-588.483.

Full text

Abstract:

Nanocrystalline metals demonstrate a broad range of fascinating mechanical properties at the nanoscale, namely a significant increase in hardness and superior yield stress. In this regard, understanding grain growth in nanocrystalline metals is crucial, particularly because nano size grains are characterized by a high curvature, which results in a high driving force for grain growth. In this work, the effect of annealing conditions on grain size of copper nanocrystalline thin films was investigated. The nanocrystalline copper thin films were first deposited by d.c. magnetron sputtering on a co

APA, Harvard, Vancouver, ISO, and other styles

3

CHEN, WEIDONG, LIANGHUAN FENG, ZHI LEI, et al. "AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING." International Journal of Modern Physics B 22, no. 14 (2008): 2275–83. http://dx.doi.org/10.1142/s0217979208039447.

Full text

Abstract:

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. F

APA, Harvard, Vancouver, ISO, and other styles

4

Lyange, Maria V., Mikhail V. Gorshenkov, A. V. Bogach, et al. "Structural and Transport Properties of Ni₄₅Mn₄₀In₁₅ Thin Films." Solid State Phenomena 233-234 (July 2015): 670–73. http://dx.doi.org/10.4028/www.scientific.net/ssp.233-234.670.

Full text

Abstract:

We report on structural and transport properties of Ni-Mn-In thin films. The results obtained have indicated that transport properties of the thin films strongly depend on the structural ordering of the films. Specifically, annealing converts the semiconducting-like character of the resistivity into that typical for metals. This is due to annealing-induced crystallization of as-deposited films which are in partially amorphous state. In both the as-deposited and the annealed thin films the field dependence of the resistivity is negative, which is typical for thin films of Heusler alloys and can

APA, Harvard, Vancouver, ISO, and other styles

5

Quiroz Gaitán, Heiddy Paola, Andrés Jhovanny Bohórquez, and Anderson Dussan Cuenca. "Effects of Co Addition on the Microstructure and Morphological Properties of TIO2: Multicomponent Oxide of Transition Metals." Revista EIA 17, no. 34 (2020): 1–6. http://dx.doi.org/10.24050/reia.v17i34.1344.

Full text

Abstract:

This work presents the process of fabrication and characterization of cobalt-doped titanium dioxide thin films on soda-lime glass substrates useful in spintronic applications. The samples were fabricated via the DC Sputtering technique, under the magnetron configuration. The samples were submitted of annealing at atmospheric pressure, after deposit process. Annealing process affect the structural properties of thin films, evidencing the formation of the Co3O4 with spinel structure. XPS measurements corroborated the presence of cobalt oxide species with a spinel-like arrangement. Morphological

APA, Harvard, Vancouver, ISO, and other styles

6

Rafaja, David. "X-Ray Scattering from Thin Films and Multilayers." Materials Science Forum 443-444 (January 2004): 65–70. http://dx.doi.org/10.4028/www.scientific.net/msf.443-444.65.

Full text

Abstract:

Capability of the X-ray scattering for study of low-dimensional structures is illustrated on few examples. They are focused to the phase analysis, residual stress measurement, calculation of the stress-free lattice parameters, investigation of the anisotropic lattice deformation and preferred orientation in UN thin films. Further, the study of concentration profiles in functionally graded hard-metals and investigation of the multilayer degradation caused by soft annealing are discussed.

APA, Harvard, Vancouver, ISO, and other styles

7

Khan, Sadaf Bashir, Zhengjun Zhang, and Shern Long Lee. "Annealing influence on optical performance of HfO2 thin films." Journal of Alloys and Compounds 816 (March 2020): 152552. http://dx.doi.org/10.1016/j.jallcom.2019.152552.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Tang, Lei, Shui Yuan Chen, Hui Qin Zhang, and Zhi Gao Huang. "Effects of Selenization Conditions on the Properties of Cu-In-Ga-Se Thin Films Prepared by Pulsed Laser Deposition." Advanced Materials Research 1102 (May 2015): 83–86. http://dx.doi.org/10.4028/www.scientific.net/amr.1102.83.

Full text

Abstract:

In this paper, Pulsed laser deposition (PLD) is attempted to be an alternative synthesis method for Cu-Ga-In (CIGS) thin films. Cu-In-Ga prefabricated metal films were grown on the quartz substrates by PLD method. Then the CIGS films with different Se content were synthesized by the post-selenization(Se)-annealing processes. The structure, element component proportion and optical properties of the CIGS films were investigated. The experimental results indicate that the CIGS films can be well obtained by the PLD method with Se-annealing. The performances of the CIGS films are much affect by the

APA, Harvard, Vancouver, ISO, and other styles

9

Simões, S., R. Calinas, P. J. Ferreira, F. Viana, M. T. Vieira, and M. F. Vieira. "TEM and SEM in-situ annealing of nanocrystalline copper thin films." Microscopy and Microanalysis 14, S3 (2008): 49–52. http://dx.doi.org/10.1017/s1431927608089368.

Full text

Abstract:

Materials mechanical resistance is known to depend on the size of structural features, accordingly to the familiar HallPetch equation. For the nanometer range of grain sizes, this relationship breaks down and a change of the grain size exponent is needed to satisfy this dependency. Nevertheless, the superior strength of the nanocrystalline material relays on the small dimension of its grains. Characterization of the thermal stability of these materials becomes relevant since a large fraction of atoms are in the grain boundaries and, as a result, its structure posses a large excess of energy th

APA, Harvard, Vancouver, ISO, and other styles

10

Xu, Huiping, Helge Heinrich, and Jörg M. K. Wiezorek. "Microstructural changes during annealing of FePd-based thin films." Intermetallics 11, no. 9 (2003): 963–69. http://dx.doi.org/10.1016/s0966-9795(03)00100-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Tsau, Chun-Huei, Zhang-Yan Hwang, and Swe-Kai Chen. "The Microstructures and Electrical Resistivity of (Al, Cr, Ti)FeCoNiOxHigh-Entropy Alloy Oxide Thin Films." Advances in Materials Science and Engineering 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/353140.

Full text

Abstract:

The (Al, Cr, Ti)FeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOxfilms was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films

APA, Harvard, Vancouver, ISO, and other styles

12

Aihaiti, Litipu, Kamale Tuokedaerhan, Beysen Sadeh, Min Zhang, Xiangqian Shen, and Abuduwaili Mijiti. "Effect of Annealing Temperature on Microstructure and Resistivity of TiC Thin Films." Coatings 11, no. 4 (2021): 457. http://dx.doi.org/10.3390/coatings11040457.

Full text

Abstract:

Titanium carbide (TiC) thin films were prepared by non-reactive simultaneous double magnetron sputtering. After deposition, all samples were annealed at different temperatures under high-vacuum conditions. This paper mainly discusses the influence of deposition methods and annealing temperatures on microstructure, surface topography, bonding states and electrical resistivity of TiC films. XRD (X-ray diffraction) results show that TiC thin films can still form crystals without annealing, and the crystallinity of thin films is improved after annealing. The estimated grain size of the TiC films v

APA, Harvard, Vancouver, ISO, and other styles

13

Paul, Biplab, Jun Lu, and Per Eklund. "Growth of CaxCoO2 Thin Films by A Two-Stage Phase Transformation from CaO–CoO Thin Films Deposited by Rf-Magnetron Reactive Cosputtering." Nanomaterials 9, no. 3 (2019): 443. http://dx.doi.org/10.3390/nano9030443.

Full text

Abstract:

The layered cobaltates AxCoO2 (A: alkali metals and alkaline earth metals) are of interest in the area of energy harvesting and electronic applications, due to their good electronic and thermoelectric properties. However, their future widespread applicability depends on the simplicity and cost of the growth technique. Here, we have investigated the sputtering/annealing technique for the growth of CaxCoO2 (x = 0.33) thin films. In this approach, CaO–CoO film is first deposited by rf-magnetron reactive cosputtering from metallic targets of Ca and Co. Second, the as-deposited film is reactively a

APA, Harvard, Vancouver, ISO, and other styles

14

JIANG, H. C., W. L. ZHANG, X. F. CAO, W. X. ZHANG, and B. PENG. "TRANSPORT PROPERTIES OF Ag-DOPED La0.7Ca0.3MnO3 THIN FILMS ON SILICON SUBSTRATE." International Journal of Modern Physics B 24, no. 27 (2010): 5451–56. http://dx.doi.org/10.1142/s0217979210056141.

Full text

Abstract:

Ag -doped La 0.7 Ca 0.3 MnO 3 (LCMO) films were prepared on silicon substrate by RF magnetron sputtering. The dependences of transport properties on annealing temperature were explored. It is shown that the resistivity of the samples decreases and the metal–insulator transition temperature shifts to higher temperature with the increase in annealing temperature. Two metal–insulator transition temperatures are presented in the R – T plots of Ag -doped LCMO films, which can be explained by the Ag 1+ substitution of La 3+ to form La 1-x Ag x MnO 3 compound. Compared with LCMO thin films, Ag -dopin

APA, Harvard, Vancouver, ISO, and other styles

15

Rénucci, P., L. Gaudart, J. P. Pétrakian, and D. Roux. "Effect of annealing on the electrical resistance of thin films of alkaline earth metals." Thin Solid Films 125, no. 1-2 (1985): 53–56. http://dx.doi.org/10.1016/0040-6090(85)90394-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Neetu and M. Zulfequar. "Annealing effect on optical parameters of Se85−xTe15Hgx thin films." Journal of Alloys and Compounds 576 (November 2013): 103–7. http://dx.doi.org/10.1016/j.jallcom.2013.04.025.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Arshad, Adillah Nurashikin, Rozana Mohd Dahan, Mohamad Hafiz Mohd Wahid, Muhamad Naiman Sarip, and Mohamad Rusop Mahmood. "Enhancement on the Electrical Properties of PVDF/MgO Nanocomposite Thin Films." Advanced Materials Research 1134 (December 2015): 16–22. http://dx.doi.org/10.4028/www.scientific.net/amr.1134.16.

Full text

Abstract:

Poly (vinylideneflouride)/nanomagnesium oxide (PVDF/MgO) film with MgO loading percentage of 7% were annealed with various annealing temperatures ranging from 70°C to 170°C. The PVDF/MgO(7%) thin films were fabricated using spin coating technique with metal-insulator-metal (MIM) configuration and the dielectric constant of PVDF/MgO(7%) with respect to annealing temperatures was studied. The PVDF/MgO nanocomposite thin films annealed at temperature of 70°C (AN70) showed an improvement in the dielectric constant of 27 at 103 Hz compared to un-annealed sample (UN), which is 21 at the same frequen

APA, Harvard, Vancouver, ISO, and other styles

18

Axelsson, Anna-Karin, Matjaz Valant, Laura Fenner, Andrew S. Wills, and Neil McN Alford. "Chemistry of post-annealing of epitaxial CoFe2O4 thin films." Thin Solid Films 517, no. 13 (2009): 3742–47. http://dx.doi.org/10.1016/j.tsf.2009.01.142.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Čekada, M., P. Panjan, J. Dolinšek, et al. "Diffusion during annealing of Al/Cu/Fe thin films." Thin Solid Films 515, no. 18 (2007): 7135–39. http://dx.doi.org/10.1016/j.tsf.2007.03.031.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Jackson, Nathan, Frank Stam, Joe O'Brien, Lekshmi Kailas, Alan Mathewson, and Cian O'Murchu. "Crystallinity and mechanical effects from annealing Parylene thin films." Thin Solid Films 603 (March 2016): 371–76. http://dx.doi.org/10.1016/j.tsf.2016.02.047.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Lomenzo, Patrick D., Qanit Takmeel, Saeed Moghaddam, and Toshikazu Nishida. "Annealing behavior of ferroelectric Si-doped HfO2 thin films." Thin Solid Films 615 (September 2016): 139–44. http://dx.doi.org/10.1016/j.tsf.2016.07.009.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Hasan, Shaymaa Qasim Abdul, Ahmed Z. Obaid, Hanan K. Hassun, and Auday H. Shaban. "Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells." Key Engineering Materials 886 (May 2021): 57–65. http://dx.doi.org/10.4028/www.scientific.net/kem.886.57.

Full text

Abstract:

Thin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide materials, paly an essential role in solar energy conversion market. In this paper, transition metals with chalcogenide Nickel selenide termed as (NiSe2/Si) are synthesized. To this end, polycrystalline NiSe2 thin films are deposited through the use of vacuum evaporation technique under vacuum of 2.1x10-5 mbar, which are supplied to different anneali

APA, Harvard, Vancouver, ISO, and other styles

23

Zheng, X. J., Y. C. Zhou, and H. Zhong. "Dependence of fracture toughness on annealing temperature in Pb(Zr0.52Ti0.48)O3 thin films produced by metal organic decomposition." Journal of Materials Research 18, no. 3 (2003): 578–84. http://dx.doi.org/10.1557/jmr.2003.0075.

Full text

Abstract:

Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) thin films were grown on Pt/Ti/Si(001) by metal organic decomposition (MOD). The effects of the annealing procedure on the crystalline microstructure, hysteresis loops, and fracture toughness of PZT thin films were investigated by x-ray diffraction, RT66A analyzer, and Vickers indentation method, respectively. It was found that the fracture toughness, crystalline microstructure, and ferroelectric properties depend on the annealing procedure. When the annealing temperature is in the range of 600–750 °C, the higher the annealing temperature, the b

APA, Harvard, Vancouver, ISO, and other styles

24

Ousi-Benomar, W., S. S. Xue, R. A. Lessard, A. Singh, Z. L. Wu, and P. K. Kuo. "Structural and optical characterization of BaTiO3 thin films prepared by metal-organic deposition from barium 2-ethylhexanoate and titanium dimethoxy dineodecanoate." Journal of Materials Research 9, no. 4 (1994): 970–79. http://dx.doi.org/10.1557/jmr.1994.0970.

Full text

Abstract:

Single phase BaTi03 thin films were prepared by metal-organic deposition (MOD) using barium 2-ethylhexanoate and titanium dimethoxy dineodecanoate as the metal-organic precursors. A series of experiments was conducted on the metal-organic spin-coated films and their correspondingly annealed samples by employing experimental techniques ranging from thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR), x-ray diffraction (XRD), and scanning electron microscopy (SEM), to various optical property characterization methods. A better understanding has been achieved regardin

APA, Harvard, Vancouver, ISO, and other styles

25

Alvarado, Jose Alberto, Arturo Maldonado, Héctor Juarez, Mauricio Pacio, and Rene Perez. "Characterization of nanostructured ZnO thin films deposited through vacuum evaporation." Beilstein Journal of Nanotechnology 6 (April 16, 2015): 971–75. http://dx.doi.org/10.3762/bjnano.6.100.

Full text

Abstract:

This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing

APA, Harvard, Vancouver, ISO, and other styles

26

Zhang, Yu Jun, Yuan Hua Lin, and Ce Wen Nan. "Annealing Temperature Dependent Ferromagnetic Behaviors Observed in Highly Orientated Pure NiO Thin Films." Key Engineering Materials 602-603 (March 2014): 956–59. http://dx.doi.org/10.4028/www.scientific.net/kem.602-603.956.

Full text

Abstract:

Transition metal (TM) doped NiO is a promising candidate of p-type oxide diluted magnetic semiconductors (DMSs), which shows obvious room-temperature ferromagnetism. When researching the magnetic properties of DMSs, it is very important to get rid of ferromagnetic impurity phases by optimizing the preparation process. For this purpose, pure NiO thin films have been deposited by a pulsed laser deposition method and annealed by different annealing process. As-deposited or low-temperature annealed films show room-temperature ferromagnetism and high-temperature annealed films are not ferromagnetic

APA, Harvard, Vancouver, ISO, and other styles

27

Calhoun, Seth, Rachel Evans, Cameron Nickle, et al. "Vanadium Oxide Thin Film by Aqueous Spray Deposition." MRS Advances 3, no. 45-46 (2018): 2777–82. http://dx.doi.org/10.1557/adv.2018.512.

Full text

Abstract:

ABSTRACTVanadium Oxide has application to infrared bolometers due to high temperature coefficient of resistivity (TCR). It has attracted interest for switchable plasmonic devices due to its metal to insulator transition near room temperature. We report here the properties of vanadium oxide deposited by an aqueous spray process. The films have a ropy surface morphology with ∼70 nm surface roughness. The polycrystalline phase depends on annealing conditions. The films have TCR of ∼2%/deg, which compares well with sputtered films. Only weak evidence is found for an insulator-metal phase transitio

APA, Harvard, Vancouver, ISO, and other styles

28

Kaydanova, T., A. Miedaner, C. Curtis, et al. "Direct inkjet printing of composite thin barium strontium titanate films." Journal of Materials Research 18, no. 12 (2003): 2820–25. http://dx.doi.org/10.1557/jmr.2003.0393.

Full text

Abstract:

Composite Ba0.6Sr0.4TiO3/MgO thin films with 60% tuning and tan [H9254] of 0.007 at 2 GHz were deposited using metal organic decomposition inks by spin coating on single crystal MgO substrates. The films with approximately 1 mol% MgO in Ba0.6Sr0.4TiO3 had a better tuning/loss ratio than either the 0 or the 10 mol% MgO substituted films. Crystalline Ba0.5Sr0.5TiO3 films were produced on both MgO and alumina substrates by inkjet printing of metalorganic precursors with subsequent thermal decomposition followed by annealing at 900°C. Barium strontium titanate lines as narrow as 100 μm were printe

APA, Harvard, Vancouver, ISO, and other styles

29

Snyder, Joshua, Nenad Markovic, and Vojislav Stamenkovic. "Single crystalline thin films as a novel class of electrocatalysts." Journal of the Serbian Chemical Society 78, no. 11 (2013): 1689–702. http://dx.doi.org/10.2298/jsc130916119s.

Full text

Abstract:

The ubiquitous use of single crystal metal electrodes has garnered invaluable insight into the relationship between surface atomic structure and functional electrochemical properties. However, the sensitivity of their electrochemical response to surface orientation and the amount of precious metal required can limit their use. We present here a generally applicable procedure for producing thin metal films with a large proportion of atomically flat (111) terraces without the use of an epitaxial template. Thermal annealing in a controlled atmosphere induces long-range ordering of magnetron sputt

APA, Harvard, Vancouver, ISO, and other styles

30

Khalifa, Zaki S. "Grain size reduction on nanostructured TiO2 thin films due to annealing." RSC Advances 7, no. 48 (2017): 30295–302. http://dx.doi.org/10.1039/c7ra00706j.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Vishwas, M., K. Narasimha Rao, and Ashok M. Raichur. "Fabrication and Characterization of ZnFe₂O₄ Thin Film Based Metal-Insulator-Semiconductor Capacitors." International Letters of Chemistry, Physics and Astronomy 50 (May 2015): 151–58. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.50.151.

Full text

Abstract:

Thin films of zinc ferrite (ZnFe2O4) were deposited on glass, quartz and p-silicon (100) substrates by the sol-gel method. The structural properties of the films were studied using x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD data show the film having a spinel structure and the crystalline phase exists after annealing at 500°C for 2 h in air. The SEM and AFM images show the nanocrystalline nature of the films. The optical transmittance decreased with increase of annealing temperature. The optical band gap energy was estimated at differe

APA, Harvard, Vancouver, ISO, and other styles

32

Jin, Sunghwan, Ming Huang, Youngwoo Kwon, et al. "Colossal grain growth yields single-crystal metal foils by contact-free annealing." Science 362, no. 6418 (2018): 1021–25. http://dx.doi.org/10.1126/science.aao3373.

Full text

Abstract:

Single-crystal metals have distinctive properties owing to the absence of grain boundaries and strong anisotropy. Commercial single-crystal metals are usually synthesized by bulk crystal growth or by deposition of thin films onto substrates, and they are expensive and small. We prepared extremely large single-crystal metal foils by “contact-free annealing” from commercial polycrystalline foils. The colossal grain growth (up to 32 square centimeters) is achieved by minimizing contact stresses, resulting in a preferred in-plane and out-of-plane crystal orientation, and is driven by surface energ

APA, Harvard, Vancouver, ISO, and other styles

33

Prabakar, K., Sa K. Narayandass, and D. Mangalaraj. "Effect of annealing on the optical constants of Cd0.2Zn0.8Te thin films." Journal of Alloys and Compounds 364, no. 1-2 (2004): 23–28. http://dx.doi.org/10.1016/s0925-8388(03)00542-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Chen, Xue Ying, Lei Wang, Jin Bao Xu, Liang Bian, and Bo Gao. "Preparation and Electrical Properties of Mn-Co-Ni-O Thin-Film for NTC Thermistors Application." Materials Science Forum 745-746 (February 2013): 599–604. http://dx.doi.org/10.4028/www.scientific.net/msf.745-746.599.

Full text

Abstract:

Mn-Co-Ni-O (Mn:Co:Ni=1.74:0.72:0.54, MCN) thin films with single cubic spinel structure were prepared on Si substrates by metal organic solution deposition (MOSD) method at different annealing temperatures. The effects of annealing temperature on the phase component, crystalline microstructure, surface morphology and electrical properties of the MCN thin films were studied. According to the results of x-ray diffraction pattern, the MCN thin film annealed at 650 had spinel structure. Observation with field emission scanning electron microscope (FE-SEM) on the MCN thin films showed that the grai

APA, Harvard, Vancouver, ISO, and other styles

35

Sasajima, Yasushi, Junpei Kageyama, Khyoupin Khoo, and Jin Onuki. "Grain coarsening mechanism of Cu thin films by rapid annealing." Thin Solid Films 518, no. 23 (2010): 6883–90. http://dx.doi.org/10.1016/j.tsf.2010.07.039.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Kashi, M. Almasi, S. P. H. Marashi, R. Pouladi, and P. J. Grundy. "The effect of annealing on single-layer CoCrPtNb thin films." Thin Solid Films 518, no. 8 (2010): 2157–62. http://dx.doi.org/10.1016/j.tsf.2009.09.066.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Perani, M., N. Brinkmann, M. A. Fazio, A. Hammud, B. Terheiden, and D. Cavalcoli. "Annealing effects on SiOxNy thin films: Optical and morphological properties." Thin Solid Films 617 (October 2016): 133–37. http://dx.doi.org/10.1016/j.tsf.2016.03.067.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Matsuo, H., K. Yoshino, and T. Ikari. "Characterization of AgGaSe2 thin films grown by post annealing method." Thin Solid Films 515, no. 2 (2006): 505–8. http://dx.doi.org/10.1016/j.tsf.2005.12.281.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Tu, Sheng Lung, Yen Hsun Su, Yun Hwei Shen, Dah Tong Ray, Yu Chun Wu, and Tao Hsing Chen. "Photo-Electronic Properties of Titanium Dioxide Nano Thin Films." Applied Mechanics and Materials 479-480 (December 2013): 50–54. http://dx.doi.org/10.4028/www.scientific.net/amm.479-480.50.

Full text

Abstract:

In this study, nano-titanium films of different thickness were deposited. By adjusting it is found that when the thickness of the titanium films was in the nano-scale, the electric resistivity of the titanium films decreased. Furthermore, the deposited titanium was transformed into titanium oxide by maintain an oxygen atmosphere and using a rapid annealing furnace during sputtering. When oxidized nano titanium film is sputtered on a low-electric-resistive metal thin film, the photo-electronic properties of Nano-thin film will be enhanced.

APA, Harvard, Vancouver, ISO, and other styles

40

Lin, Ruei-Cheng, Tai-Kuang Lee, Der-Ho Wu, and Ying-Chieh Lee. "A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy." Advances in Materials Science and Engineering 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/847191.

Full text

Abstract:

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films

APA, Harvard, Vancouver, ISO, and other styles

41

WANG, YUE, HAO GONG, and LING LIU. "CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS." International Journal of Modern Physics B 16, no. 01n02 (2002): 308–13. http://dx.doi.org/10.1142/s0217979202009809.

Full text

Abstract:

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO

APA, Harvard, Vancouver, ISO, and other styles

42

Allam, A., P. Boulet, and M. C. Record. "Phase formation in Mn–Si thin films during rapid thermal annealing." Intermetallics 37 (June 2013): 69–75. http://dx.doi.org/10.1016/j.intermet.2013.01.003.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Tillmann, Wolfgang, and Soroush Momeni. "In-situ annealing of NiTi thin films at different temperatures." Sensors and Actuators A: Physical 221 (January 2015): 9–14. http://dx.doi.org/10.1016/j.sna.2014.10.034.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Zainol, Mohd Nizar, Shafinaz Sobihana Shariffudin, Mohamad Hafiz Mamat, and Mohamad Rusop. "Effect of Oxygen Annealing on the Electrical and Optical Properties of Zinc Oxide Thin Film." Advanced Materials Research 1109 (June 2015): 598–602. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.598.

Full text

Abstract:

This paper presents on the effect of oxygen annealing on the electrical properties and optical properties. Sol gel spin coating is used to deposit zinc oxide thin films on glass substrates to obtain the uniform thin films. Here, the ZnO thin films were annealed in oxygen environment with various oxygen concentration of 20 to 40 sccm. This metal oxide has shown its ability as a very high optical transmittance which at 20 sccm thin films give the highest transmittance that is 97.44% and at 40 sccm thin films give the lowest transmittance that is 87.61%. Next, this metal oxide also has shown its

APA, Harvard, Vancouver, ISO, and other styles

45

CAMPILLO, G., L. F. CASTRO, P. VIVAS та ін. "DIRECT GROWTH OF EPITAXIAL La0.67Ca0.33MnO3 - δ THIN FILMS". Surface Review and Letters 09, № 05n06 (2002): 1611–15. http://dx.doi.org/10.1142/s0218625x02004086.

Full text

Abstract:

La 0.67 Ca 0.33 MnO 3 - δ thin films were deposited using a high-pressure dc-sputtering process. Pure oxygen at a pressure of 3.8 mbar was used as sputtering gas. The films were grown on (001) LaAlO 3 and (001) SrTiO 3 substrates at heater temperature of 850° without any annealing treatment. The formation of highly a-axis-oriented films with sharp interface with substrate surface is demonstrated by X-ray diffraction, transmission electron microscope (TEM), and atomic force microscope (AFM) analysis. Electrical characterization revealed a metal–insulator transition at T MI = 276 K, and magnetic

APA, Harvard, Vancouver, ISO, and other styles

46

Li, Yu Xiang, Yan Wang, Qing Pu Wang, and Chun Lei Ma. "Effects of Annealing on the Optical and Electronic Properties of Poly (vinylidene fluoride-trifluoroethylene) Copolymer Thin Films." Advanced Materials Research 79-82 (August 2009): 919–22. http://dx.doi.org/10.4028/www.scientific.net/amr.79-82.919.

Full text

Abstract:

Thin films of vinylidene fluoride with trifluoroethylene [P(VDF-TrFE)] copolymer have been deposited onto bare Si and SiO2 by spin casting from methylethylketone solutions. The structures and optical and electronic properties for P(VDF-TrFE) films after vacuum and forming gas annealing were studied. The degree of structural order and the crystallinity determined by X-ray diffraction were increased with the thermal annealing time. Ellipsometry spectroscopy were employed to investigate the changes in the thickness, refractive indices n, and the anisotropic properties. The results reflected that

APA, Harvard, Vancouver, ISO, and other styles

47

Ahn, Donggi, Chunjoong Kim, Joon-Gon Lee, Byoungsoo Kim, Yejun Park, and Byoungwoo Park. "Electrochemical stability in cerium-phosphate–coated LiCoO2 thin films." Journal of Materials Research 22, no. 3 (2007): 688–94. http://dx.doi.org/10.1557/jmr.2007.0092.

Full text

Abstract:

The electrochemical stability of LiCoO2 thin films was improved by cerium-phosphate coating deposited at room temperature. The cerium-phosphate coating layer also effectively suppressed the increase of charge-transfer resistance during cycling. However, the cycling stability and the initial capacity of the coated LiCoO2 thin films deteriorated as the annealing temperature increased, different from other metal-phosphate coating. These phenomena were attributed to the interdiffusion between the cerium-phosphate coating layer and LiCoO2 thin film, instead of the nanocrystal formation in the amorp

APA, Harvard, Vancouver, ISO, and other styles

48

BESNARD, AURÉLIEN, NICOLAS MARTIN, FABRICE STHAL, LUC CARPENTIER, and JEAN-YVES RAUCH. "METAL-TO-DIELECTRIC TRANSITION INDUCED BY ANNEALING OF ORIENTED TITANIUM THIN FILMS." Functional Materials Letters 06, no. 01 (2013): 1250051. http://dx.doi.org/10.1142/s1793604712500518.

Full text

Abstract:

Titanium thin films were deposited by DC magnetron sputtering. The glancing angle deposition (GLAD) method was implemented to prepare two series of titanium films: perpendicular and oriented columnar structures. The first series was obtained with a conventional incident angle α of the sputtered particles (α = 0°), whereas the second one used a grazing incident angle α = 85°. Afterwards, the films were annealed in air using six cycles of temperature ranging from 293 K to 773 K. DC electrical conductivity was measured during the annealing treatment. Films deposited by conventional sputtering (α

APA, Harvard, Vancouver, ISO, and other styles

49

Chu, W. F., M. V. Przychowski, and H. Stafast. "Superconducting YBaCuO thin films from excimer laser evaporation without post-annealing." Superconductor Science and Technology 3, no. 10 (1990): 497–99. http://dx.doi.org/10.1088/0953-2048/3/10/004.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Kong, Xiangdong, Qian Dai, Li Han, et al. "Fabrication of superconducting magnesium diboride thin films by electron beam annealing." Superconductor Science and Technology 24, no. 10 (2011): 105013. http://dx.doi.org/10.1088/0953-2048/24/10/105013.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!