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Relevant bibliographies by topics / Antiparallel diode

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Dissertations / Theses
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Academic literature on the topic 'Antiparallel diode'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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Journal articles on the topic "Antiparallel diode"

1

Huang, E., and J. P. Barnes. "GTO with monolithic antiparallel diode." IEE Proceedings I Solid State and Electron Devices 132, no. 6 (1985): 245. http://dx.doi.org/10.1049/ip-i-1.1985.0054.

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Gutta, V., A. E. Parker, and A. Fattorini. "Characterization of Systematic and Random Diode Mismatches in Antiparallel-Diode Mixers." IEEE Transactions on Microwave Theory and Techniques 57, no. 12 (2009): 3153–62. http://dx.doi.org/10.1109/tmtt.2009.2034443.

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Park, Jeong Hun, and Moon-Que Lee. "Harmonic Dual-Band Diode Mixer for the X- and K-Bands." Journal of Electromagnetic Engineering and Science 21, no. 1 (2021): 64–70. http://dx.doi.org/10.26866/jees.2021.21.1.64.

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This paper presents a new dual-band diode mixer for the X- and K-bands. The proposed mixer consists of a pair of series-connected diodes and a frequency-dependent delay line that operates at 180° and 360° at the X-band of 10.525 GHz and at the K-band of 24.15 GHz, respectively. Without reconfigurable devices such as switches, the proposed mixer operates as a single-balanced diode mixer at the X-band and a subharmonically pumped antiparallel diode mixer at the K-band simultaneously. The designed circuit was implemented in a hybrid microwave integrated circuit using discretely packaged RF components on a microwave printed circuit board. The measurement results showed conversion losses of 6.5 dB and 16.6 dB at the X- and K-bands, respectively.

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Bhaskar, U. K., N. Banerjee, A. Abdollahi, E. Solanas, G. Rijnders, and G. Catalan. "Flexoelectric MEMS: towards an electromechanical strain diode." Nanoscale 8, no. 3 (2016): 1293–98. http://dx.doi.org/10.1039/c5nr06514c.

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Ferroelectric nanocantilevers function as switchable “strain diodes”: their electromechanical response is enhanced when ferroelectricity and flexoelectricity are parallel, and diminished or even suppressed when they are antiparallel.

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Mohyuddin, Wahab, Kang Wook Kim, and Hyun Chul Choi. "Compact Wideband Antiparallel Diode Frequency Triplers Utilizing Planar Transitions." International Journal of Antennas and Propagation 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/373179.

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Two designs of frequency triplers, which use planar transitions as baluns and an antiparallel diode pair to achieve wide bandwidth, are presented. The ultrawideband transitions are utilized for input and output impedance matching of the frequency triplers. The design process and operation principles are described in this paper. The implemented frequency triplers exhibit flat response over wide frequency range of 3 to 9 GHz. The proposed Type A frequency tripler shows conversion loss of ~18 dB with above 30 dB even harmonics suppression. With Type B frequency tripler, conversion loss of ~17 dB and above 25 dB even harmonic suppression are achieved.

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Ajit, J. S. "Design of MOS-gated bipolar transistors with integral antiparallel diode." IEEE Electron Device Letters 17, no. 7 (1996): 344–47. http://dx.doi.org/10.1109/55.506362.

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Rasheed, Rabiya, Saju K K, and Bindu V. "A five-level multilevel topology utilizing multicarrier modulation technique." International Journal of Power Electronics and Drive Systems (IJPEDS) 10, no. 2 (2019): 868. http://dx.doi.org/10.11591/ijpeds.v10.i2.pp868-873.

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<p>This paper presents a new topology for cascaded H-bridge multilevel inverter utilizing multicarrier modulation technique. The new five-level topology utilizes a capacitive divider network consisting of two capacitors for producing output voltage levels. The developed circuit has reduced number of switches and dc sources compared to conventional five level inverters. Five main power switches, a single additional diode apart from antiparallel diodes, two capacitors and a dc supply constitute a single five level unit. Simulations as well as experimental results are verified for the new topology utilising multicarrier modulation technique with reduced harmonic distortions in the output.</p>

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Gorbatyuk, A. V., I. V. Grekhov, D. V. Gusin, and B. V. Ivanov. "Static and dynamic characteristics of antiparallel diode as part of switching power module." Russian Electrical Engineering 81, no. 11 (2010): 619–26. http://dx.doi.org/10.3103/s106837121011009x.

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Alishah, Rasoul Shalchi, and Seyyed Hossein Hosseini. "A New Multilevel Inverter Structure For High-Power Applications using Multi-carrier PWM Switching Strategy." International Journal of Power Electronics and Drive Systems (IJPEDS) 6, no. 2 (2015): 318. http://dx.doi.org/10.11591/ijpeds.v6.i2.pp318-325.

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In recent, several numbers of multilevel inverter structures have been introduced that the numbers of circuit devices have been reduced. This paper introduces a new structure for multilevel inverter which can be used in high-power applications. The proposed topology is based on cascaded connection of basic units. This topology consists of minimum number of circuit components such as IGBT, gate driver circuit and antiparallel diode. For proposed topology, two methods are presented for determination of dc voltage sources values. Multi-carrier PWM method for 25-level proposed topology is used. Verification of the analytical results is done using MATLAB simulation.

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Kazimierczuk, M. K., and K. Puczko. "Class E tuned power amplifier with antiparallel diode or series diode at switch, with any loaded Q and switch duty cycle." IEEE Transactions on Circuits and Systems 36, no. 9 (1989): 1201–9. http://dx.doi.org/10.1109/31.34665.

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Dissertations / Theses on the topic "Antiparallel diode"

1

Kintr, Jindřich. "Subharmonické směšovače pro mikrovlnná pásma." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-241059.

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The task of this master’s thesis is design and implementation subharmonic mixer for the microwave band. Subharmonic mixer is based on the principle of antiparallel diode. In the first two parts are theoretically described mixers (subharmonic mixer) and topology suitable for implementation. Another work describes the design subharmonic mixer. The proposal is implemented in the program Ansoft designer. DPS is created in Eagle or in Ansoft Designer. The mixer is designed and implemented first on the lower frequency and consequently at higher frequencies (24,048 GHz and 47,088 GHz). Work also includes the measurement results of the mixer.

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Huang, Jenn-Bin, and 黃振斌. "Gallium Nitride/Indium Gallium Nitride Light-Emitting Diode Fabricated by MOCVD-Effects of Patterned Sapphire Substrate, Buffer Layer, and Antiparallel Polar Domains on Device Properties." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/ey6732.

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博士<br>國立臺灣科技大學<br>應用科技研究所<br>100<br>In this study, we fabricated gallium nitride/indium gallium nitride light-emitting diode (LED) by metalorganic chemical vapor deposition (MOCVD) technique. The effects of introducing a ZnO buffer layer prior to the low-temperature GaN buffer layer growth, varying V/III precursor feed ratio during the high-temperature GaN initial growth stage, and deliberating an antiparalled polar domains structure in the p-GaN layer region were explored so as to reduce film dislocations, improve epitaxy quality and LED device optoelectronic properties. First of all, GaN-based blue LEDs fabricated on sapphire substrates with a ZnO buffer layer exhibited a lower threading dislocation density in the epitaxially grown GaN layers and an improved device performance. Adjusting a lower V/III precursor feed ratio of 829 during the high-temperature GaN initial growth stage favored selective-area growth on patterned sapphire substrates, leading a successful conversion of three-dimention to two-dimention GaN epitaxial growth. Finally, we found for the first time that the coexistence of antiparallel Ga-polar and N-polar domains in the p-type GaN layer region improves the electrostatic discharge (ESD) endurance ability of the InGaN blue light-emitting diodes, by increasing the negative HBM-ESD 4000 V pass yield to greater than 90%. The inversion of Ga- to N-polarity in this region can be controlled by the extent of stress accumulated in the underlying layers.

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Book chapters on the topic "Antiparallel diode"

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Kingni, Sifeu Takougang, Bonaventure Nana, Guy R. Kol, Victor Kamdoum Tamba, and Paul Woafo. "Analytical, Numerical and Experimental Analysis of an RC Autonomous Circuit With Diodes in Antiparallel." In Recent Advances in Chaotic Systems and Synchronization. Elsevier, 2019. http://dx.doi.org/10.1016/b978-0-12-815838-8.00002-9.

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Conference papers on the topic "Antiparallel diode"

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Wei, Muh-Dey, and Renato Negra. "Balanced rectifier using antiparallel-diode configuration." In 2017 IEEE Asia Pacific Microwave Conference (APMC). IEEE, 2017. http://dx.doi.org/10.1109/apmc.2017.8251401.

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Chih-Sheng Yeh, Hsuan-Ling Kao, Jiun-Yi Ke, et al. "A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology." In 2012 4th International High Speed Intelligent Communication Forum (HSIC). IEEE, 2012. http://dx.doi.org/10.1109/hsic.2012.6213000.

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Zhang, Feng, Xu Yang, Wei Xue, Ruiliang Xie, Yang Li, and Yilin Sha. "A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode." In 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2018. http://dx.doi.org/10.1109/apec.2018.8341022.

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Belkhode, Satish, Anshuman Shukla, and Suryanarayana Doolla. "Analysis of antiparallel diode connection for hybrid Si/SiC-based ANPC for PV applications." In 2019 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2019. http://dx.doi.org/10.1109/ecce.2019.8912786.

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Mehdi, I. "Performance analysis of planar subharrnonicany pumped antiparallel-pair schottky diode mixers for submillimeter-wave applications." In International Conference on Millimeter and Submillimeter Waves and Applications 1994. SPIE, 1994. http://dx.doi.org/10.1117/12.2303249.

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Nayak, Debiprasad, Manish Kumar, and Sumit Pramanick. "Analysis of Switching Loss Reduction of SiC MOSFET in Presence of Antiparallel SiC Schottky Diode." In 2020 IEEE International Conference on Power Electronics, Smart Grid and Renewable Energy (PESGRE). IEEE, 2020. http://dx.doi.org/10.1109/pesgre45664.2020.9070591.

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Liu, Huawu, Hongfei Wu, Yangjun Lu, Yan Xing, and Kai Sun. "A high efficiency inverter based on SiC MOSFET without externally antiparalleled diodes." In 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014. IEEE, 2014. http://dx.doi.org/10.1109/apec.2014.6803304.

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Martin, Daniel, W. Austin Curbow, Brett Sparkman, Lauren E. Kegley, and Ty McNutt. "Switching performance comparison of 1200 V and 1700 V SiC optimized half bridge power modules with SiC antiparallel schottky diodes versus MOSFET intrinsic body diodes." In 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2017. http://dx.doi.org/10.1109/apec.2017.7931020.

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