Log in

Relevant bibliographies by topics / Area-selective atomic layer deposition / Journal articles

To see the other types of publications on this topic, follow the link: Area-selective atomic layer deposition.

Journal articles on the topic 'Area-selective atomic layer deposition'

Author: Grafiati

Published: 4 June 2021

Last updated: 27 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Area-selective atomic layer deposition.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Kvalvik, Julie Nitsche, Jon Borgersen, Per-Anders Hansen, and Ola Nilsen. "Area-selective atomic layer deposition of molybdenum oxide." Journal of Vacuum Science & Technology A 38, no. 4 (2020): 042406. http://dx.doi.org/10.1116/6.0000219.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Coffey, Brennan M., Edward L. Lin, Pei-Yu Chen, and John G. Ekerdt. "Area-Selective Atomic Layer Deposition of Crystalline BaTiO3." Chemistry of Materials 31, no. 15 (2019): 5558–65. http://dx.doi.org/10.1021/acs.chemmater.9b01271.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Sinha, Ashwini, Clifford Henderson, and Dennis W. Hess. "Area Selective Atomic Layer Deposition of Titanium Dioxide." ECS Transactions 3, no. 15 (2019): 233–41. http://dx.doi.org/10.1149/1.2721492.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Bonvalot, Marceline, Christophe Vallée, Cédric Mannequin, et al. "Area selective deposition using alternate deposition and etch super-cycle strategies." Dalton Transactions 51, no. 2 (2022): 442–50. http://dx.doi.org/10.1039/d1dt03456a.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Song, Seung Keun, Holger Saare, and Gregory N. Parsons. "Integrated Isothermal Atomic Layer Deposition/Atomic Layer Etching Supercycles for Area-Selective Deposition of TiO2." Chemistry of Materials 31, no. 13 (2019): 4793–804. http://dx.doi.org/10.1021/acs.chemmater.9b01143.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Vos, Martijn F. J., Sonali N. Chopra, Marcel A. Verheijen, et al. "Area-Selective Deposition of Ruthenium by Combining Atomic Layer Deposition and Selective Etching." Chemistry of Materials 31, no. 11 (2019): 3878–82. http://dx.doi.org/10.1021/acs.chemmater.9b00193.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Sinha, Ashwini, Dennis W. Hess, and Clifford L. Henderson. "Transport behavior of atomic layer deposition precursors through polymer masking layers: Influence on area selective atomic layer deposition." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, no. 5 (2007): 1721. http://dx.doi.org/10.1116/1.2782546.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Pasquali, Mattia, Stefan De Gendt, and Silvia Armini. "(Invited) Area-Selective Atomic Layer Deposition for Interconnect Applications." ECS Meeting Abstracts MA2021-02, no. 29 (2021): 867. http://dx.doi.org/10.1149/ma2021-0229867mtgabs.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Gupta, R., and B. G. Willis. "Nanometer spaced electrodes using selective area atomic layer deposition." Applied Physics Letters 90, no. 25 (2007): 253102. http://dx.doi.org/10.1063/1.2749429.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Lee, Han-Bo-Ram, and Hyungjun Kim. "Area Selective Atomic Layer Deposition of Cobalt Thin Films." ECS Transactions 16, no. 4 (2019): 219–25. http://dx.doi.org/10.1149/1.2979997.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Suh, Taewon, Yan Yang, Hae Won Sohn, Robert A. DiStasio, and James R. Engstrom. "Area-selective atomic layer deposition enabled by competitive adsorption." Journal of Vacuum Science & Technology A 38, no. 6 (2020): 062411. http://dx.doi.org/10.1116/6.0000497.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Oh, Il-Kwon, Tania E. Sandoval, Tzu-Ling Liu, Nathaniel E. Richey, and Stacey F. Bent. "Role of Precursor Choice on Area-Selective Atomic Layer Deposition." Chemistry of Materials 33, no. 11 (2021): 3926–35. http://dx.doi.org/10.1021/acs.chemmater.0c04718.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Yun, Sungil, Feiyang Ou, Henrik Wang, Matthew Tom, Gerassimos Orkoulas, and Panagiotis D. Christofides. "Atomistic-mesoscopic modeling of area-selective thermal atomic layer deposition." Chemical Engineering Research and Design 188 (December 2022): 271–86. http://dx.doi.org/10.1016/j.cherd.2022.09.051.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Vervuurt, René H. J., Akhil Sharma, Yuqing Jiao, Wilhelmus (Erwin) M. M. Kessels, and Ageeth A. Bol. "Area-selective atomic layer deposition of platinum using photosensitive polyimide." Nanotechnology 27, no. 40 (2016): 405302. http://dx.doi.org/10.1088/0957-4484/27/40/405302.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Mameli, Alfredo, Bora Karasulu, Marcel A. Verheijen, Adriaan J. M. Mackus, W. M. M. Kessels, and Fred Roozeboom. "(Invited) Area-Selective Atomic Layer Deposition: Role of Surface Chemistry." ECS Transactions 80, no. 3 (2017): 39–48. http://dx.doi.org/10.1149/08003.0039ecst.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Khan, Rizwan, Bonggeun Shong, Byeong Guk Ko, et al. "Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors." Chemistry of Materials 30, no. 21 (2018): 7603–10. http://dx.doi.org/10.1021/acs.chemmater.8b02774.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Balasubramanyam, Shashank, Marc J. M. Merkx, Marcel A. Verheijen, Wilhelmus M. M. Kessels, Adriaan J. M. Mackus, and Ageeth A. Bol. "Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers." ACS Materials Letters 2, no. 5 (2020): 511–18. http://dx.doi.org/10.1021/acsmaterialslett.0c00093.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Haider, Ali, Mehmet Yilmaz, Petro Deminskyi, Hamit Eren, and Necmi Biyikli. "Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers." RSC Advances 6, no. 108 (2016): 106109–19. http://dx.doi.org/10.1039/c6ra23923d.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Mameli, Alfredo, Bora Karasulu, Marcel A. Verheijen, et al. "Area-Selective Atomic Layer Deposition of ZnO by Area Activation Using Electron Beam-Induced Deposition." Chemistry of Materials 31, no. 4 (2019): 1250–57. http://dx.doi.org/10.1021/acs.chemmater.8b03165.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Chou, Chun-Yi, Wei-Hao Lee, Chih-Piao Chuu, et al. "Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride." Chemistry of Materials 33, no. 14 (2021): 5584–90. http://dx.doi.org/10.1021/acs.chemmater.1c00823.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Kim, Woo-Hee, Han-Bo-Ram Lee, Kwang Heo, et al. "Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition." Journal of The Electrochemical Society 158, no. 1 (2011): D1. http://dx.doi.org/10.1149/1.3504196.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Chen, Rong, Hyoungsub Kim, Paul C. McIntyre, David W. Porter, and Stacey F. Bent. "Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification." Applied Physics Letters 86, no. 19 (2005): 191910. http://dx.doi.org/10.1063/1.1922076.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Lee, Han-Bo-Ram. "(Invited) Area Selective Deposition Using Homometallic Precursor Inhibitors." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1462. http://dx.doi.org/10.1149/ma2023-02291462mtgabs.

Full text

Abstract:

Area-selective atomic layer deposition (AS-ALD) is envisioned to play a key role in next-generation nanofabrication for Si devices. In this presentation, various types of precursor inhibitors studied in our group will be summarized and another opportunity of our AS-ALD will be discussed. The chemical and physical interactions of inhibitors with precursors were successfully explained through theoretical calculations by density functional theory (DFT) and Monte Carlo simulation. Another concept of selective deposition by using a homometallic precursor inhibitor was proposed for seam-less deposit

APA, Harvard, Vancouver, ISO, and other styles

24

Nallan, Himamshu C., Xin Yang, Brennan M. Coffey, and John G. Ekerdt. "Low temperature, area-selective atomic layer deposition of NiO and Ni." Journal of Vacuum Science & Technology A 40, no. 6 (2022): 062406. http://dx.doi.org/10.1116/6.0002068.

Full text

Abstract:

Nickel and nickel oxide are utilized within various device heterostructures for chemical sensing, solar cells, batteries, etc. Recently, the rising interest in realizing low-cost, flexible electronics to enable ubiquitous sensors and solar panels, next-generation displays, and improved human-machine interfaces has driven interest in the development of low-temperature fabrication processes for the integration of inorganic devices with polymeric substrates. Here, we report the low-temperature area-selective atomic layer deposition of Ni by reduction of preformed NiO. Area-selective deposition of

APA, Harvard, Vancouver, ISO, and other styles

25

Chang, Chia-Wei, Hsun-Hao Hsu, Chain-Shu Hsu, and Jiun-Tai Chen. "Achieving area-selective atomic layer deposition with fluorinated self-assembled monolayers." Journal of Materials Chemistry C 9, no. 41 (2021): 14589–95. http://dx.doi.org/10.1039/d1tc04015d.

Full text

Abstract:

AS-ALD of Al2O3 using alkylphosphonic acid SAMs with different substituent groups is developed. The fluorinated SAM-modified Co substrates exhibit better blocking ability towards the Al2O3 deposition than the nonfluorinated SAM-modified Co substrate.

APA, Harvard, Vancouver, ISO, and other styles

26

Färm, Elina, Marianna Kemell, Eero Santala, Mikko Ritala, and Markku Leskelä. "Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer." Journal of The Electrochemical Society 157, no. 1 (2010): K10. http://dx.doi.org/10.1149/1.3250936.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Lee, Seunghwan, Miso Kim, GeonHo Baek, et al. "Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition." ACS Applied Materials & Interfaces 12, no. 38 (2020): 43212–21. http://dx.doi.org/10.1021/acsami.0c10322.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Färm, Elina, Marianna Kemell, Mikko Ritala, and Markku Leskelä. "Selective-Area Atomic Layer Deposition Using Poly(methyl methacrylate) Films as Mask Layers." Journal of Physical Chemistry C 112, no. 40 (2008): 15791–95. http://dx.doi.org/10.1021/jp803872s.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Brick, Chad, and Tomoyuki Ogata. "(Invited) Silanes As Precursors and Inhibitors for Area-Selective Deposition." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2222. https://doi.org/10.1149/ma2024-02302222mtgabs.

Full text

Abstract:

Silanes play a unique dual role in the field of area-selective deposition (ASD), serving as both precursors for common semiconductor-device films such as silicon dioxide, silicon oxycarbide (low-k) and silicon nitride, or as inhibitors of deposition processes via selective surface passivation. In this presentation we will review the evolution of silane precursors from simple thermal chemical vapor deposition (CVD) and epitaxial precursors such as tetraethoxysilane and silane, to the increasingly complex molecules used for plasma-enhanced CVD, atomic layer deposition, and ASD. Contemporary repo

APA, Harvard, Vancouver, ISO, and other styles

30

Mameli, Alfredo, Bora Karasulu, Jie Shen, and Fred Roozeboom. "(Invited) Area-Selective Spatial Atomic Layer Deposition of Silicon-Based Materials." ECS Meeting Abstracts MA2022-02, no. 31 (2022): 1132. http://dx.doi.org/10.1149/ma2022-02311132mtgabs.

Full text

Abstract:

Area-selective atomic layer deposition (AS-ALD) holds great potential for advancing device manufacturing.1 Recently, outstanding progress on this topic has been made in terms of understanding and developing highly selective processes for various material systems; some of these processes have already been transferred into fabs.2 In this work we provide an overview of AS-ALD of silicon-based materials with high selectivity and high throughput, especially silicon oxide and nitride. While the selectivity is mostly governed by the method of choice and the underpinning chemistry, the aspect of high-

APA, Harvard, Vancouver, ISO, and other styles

31

Song, Zhongxin, Biqiong Wang, Niancai Cheng, et al. "Atomic layer deposited tantalum oxide to anchor Pt/C for a highly stable catalyst in PEMFCs." Journal of Materials Chemistry A 5, no. 20 (2017): 9760–67. http://dx.doi.org/10.1039/c7ta01926b.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Kim, Hyungjun, Han-Bo-Ram Lee, Woo-Hee Kim, Jeong Won Lee, Jaemin Kim, and Inchan Hwang. "?The Degradation of Deposition Blocking Layer during Area Selective Plasma Enhanced Atomic Layer Deposition of Cobalt." Journal of the Korean Physical Society 56, no. 1 (2010): 104–7. http://dx.doi.org/10.3938/jkps.56.104.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Liu, Tzu-Ling, Li Zeng, Katie L. Nardi, Dennis M. Hausmann, and Stacey F. Bent. "Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition." Langmuir 37, no. 39 (2021): 11637–45. http://dx.doi.org/10.1021/acs.langmuir.1c02211.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Wojtecki, Rudy J., Anuja DeSilva, Noah Frederick Fine Nathel, et al. "Reactive Monolayers in Directed Additive Manufacturing - Area Selective Atomic Layer Deposition." Journal of Photopolymer Science and Technology 31, no. 3 (2018): 431–36. http://dx.doi.org/10.2494/photopolymer.31.431.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Chalker, P. R., P. A. Marshall, K. Dawson, I. F. Brunell, C. J. Sutcliffe, and R. J. Potter. "Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics." AIP Advances 5, no. 1 (2015): 017115. http://dx.doi.org/10.1063/1.4905887.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Seo, Seunggi, Byung Chul Yeo, Sang Soo Han, et al. "Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns." ACS Applied Materials & Interfaces 9, no. 47 (2017): 41607–17. http://dx.doi.org/10.1021/acsami.7b13365.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Chen, R., and S. F. Bent. "Chemistry for Positive Pattern Transfer Using Area-Selective Atomic Layer Deposition." Advanced Materials 18, no. 8 (2006): 1086–90. http://dx.doi.org/10.1002/adma.200502470.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Cho, Min Gyoo, Jae Hee Go, and Byung Joon Choi. "Recent Studies on Area Selective Atomic Layer Deposition of Elemental Metals." Journal of Korean Powder Metallurgy Institute 30, no. 2 (2023): 156–68. http://dx.doi.org/10.4150/kpmi.2023.30.2.156.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Parsons, Gregory. "(Invited) Introduction and Overview of Area-Selective Thin Film Deposition." ECS Meeting Abstracts MA2022-02, no. 31 (2022): 1113. http://dx.doi.org/10.1149/ma2022-02311113mtgabs.

Full text

Abstract:

Low temperature Area-Selective Deposition (ASD) is becoming an important need in semiconductor manufacturing to augment photolithography for improved resolution and alignment of printed features. Area-selective deposition is used routinely at temperature in excess of 800°C to form epitaxial transistor contacts, but for back-end applications, new ASD processes are needed that work at <400°C. This tutorial will introduce the challenges of low temperature ASD, and summarize recent advances in this field, including ASD via Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD), and u

APA, Harvard, Vancouver, ISO, and other styles

40

Wang, Xiaofeng, Zhe Zhao, Chengcheng Zhang, Qingbo Li, and Xinhua Liang. "Surface Modification of Catalysts via Atomic Layer Deposition for Pollutants Elimination." Catalysts 10, no. 11 (2020): 1298. http://dx.doi.org/10.3390/catal10111298.

Full text

Abstract:

In recent years, atomic layer deposition (ALD) is widely used for surface modification of materials to improve the catalytic performance for removing pollutants, e.g., CO, hydrocarbons, heavy metal ions, and organic pollutants, and much progress has been achieved. In this review, we summarize the recent development of ALD applications in environmental remediation from the perspective of surface modification approaches, including conformal coating, uniform particle deposition, and area-selective deposition. Through the ALD conformal coating, the activity of photocatalysts improved. Uniform part

APA, Harvard, Vancouver, ISO, and other styles

41

Pasquali, Mattia, Stefan De Gendt, and Silvia Armini. "Area-Selective Deposition by a Combination of Organic Film Passivation and Atomic Layer Deposition." ECS Transactions 92, no. 3 (2019): 25–32. http://dx.doi.org/10.1149/09203.0025ecst.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Li, Yi-Cheng, Kun Cao, Yu-Xiao Lan, et al. "Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption." Molecules 26, no. 10 (2021): 3056. http://dx.doi.org/10.3390/molecules26103056.

Full text

Abstract:

Manganese oxide (MnOx) shows great potential in the areas of nano-electronics, magnetic devices and so on. Since the characteristics of precise thickness control at the atomic level and self-align lateral patterning, area-selective deposition (ASD) of the MnOx films can be used in some key steps of nanomanufacturing. In this work, MnOx films are deposited on Pt, Cu and SiO2 substrates using Mn(EtCp)2 and H2O over a temperature range of 80–215 °C. Inherently area-selective atomic layer deposition (ALD) of MnOx is successfully achieved on metal/SiO2 patterns. The selectivity improves with increa

APA, Harvard, Vancouver, ISO, and other styles

43

Vos, Martijn F. J., Sonali N. Chopra, John G. Ekerdt, Sumit Agarwal, Wilhelmus M. M. (Erwin) Kessels, and Adriaan J. M. Mackus. "Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design." Journal of Vacuum Science & Technology A 39, no. 3 (2021): 032412. http://dx.doi.org/10.1116/6.0000912.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Kim, Yeon Rae, In Su Jeon, Soonmin Yim‬, et al. "Fluorine-containing polymeric inhibitor for highly selective and durable area-selective atomic layer deposition." Applied Surface Science 578 (March 2022): 152056. http://dx.doi.org/10.1016/j.apsusc.2021.152056.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Park, Haneul, Jieun Oh, Jeong-Min Lee, and Woo-Hee Kim. "Selective nitride passivation using vapor-dosed aldehyde inhibitors for area-selective atomic layer deposition." Materials Letters 366 (July 2024): 136570. http://dx.doi.org/10.1016/j.matlet.2024.136570.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Lee, Byoung H., and Myung M. Sung. "Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 3758–64. http://dx.doi.org/10.1166/jnn.2007.018.

Full text

Abstract:

We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsi

APA, Harvard, Vancouver, ISO, and other styles

47

Lee, Byoung H., and Myung M. Sung. "Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 3758–64. http://dx.doi.org/10.1166/jnn.2007.18067.

Full text

Abstract:

We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsi

APA, Harvard, Vancouver, ISO, and other styles

48

Plakhotnyuk, Maksym, Atilla C. Varga, Karolis Parfeniukas, Ivan Kundrata та Julien Bachmann. "Inherently Selective Atomic Layer Deposition for Optical and Sensor Applications: Microreactor Direct Atomic Layer Processing (μDALP™)". ECS Meeting Abstracts MA2023-02, № 29 (2023): 1463. http://dx.doi.org/10.1149/ma2023-02291463mtgabs.

Full text

Abstract:

In parallel to additive manufacturing leading the revolution in traditional manufacturing, the same principles can revolutionize traditional thin film deposition techniques. Where lithography and vapor phase deposition techniques struggle, for example, with rapid iterations for prototyping or incompatibility with the used chemistry, additive manufacturing can shine. Indeed, several approaches are in development for 3D nanopriting1,2,3. Atomic Layer Deposition, and in more general Atomic Layer Processing, offers a unique opportunity for localized 3D processing/printing due to its two-step proce

APA, Harvard, Vancouver, ISO, and other styles

49

Hui, Liwei, Chen Chen, Min A. Kim, and Haitao Liu. "Fabrication of DNA-Templated Pt Nanostructures by Area-Selective Atomic Layer Deposition." ACS Applied Materials & Interfaces 14, no. 14 (2022): 16538–45. http://dx.doi.org/10.1021/acsami.2c02244.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Zhai, Peng, Laibao Zhang, David A. Cullen, Divakar R. Aireddy, and Kunlun Ding. "Construction of Inverse Metal–Zeolite Interfaces via Area-Selective Atomic Layer Deposition." ACS Applied Materials & Interfaces 13, no. 43 (2021): 51759–66. http://dx.doi.org/10.1021/acsami.1c15569.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!