Relevant bibliographies by topics / Arsenid inditý

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Arsenid inditý'

Author: Grafiati
Published: 28 June 2021
Last updated: 29 July 2025

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Journal articles on the topic "Arsenid inditý"

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Jha, D. K., and N. Yashvardhini. "Assessment of arsenic induced physiological and lipid peroxidation response in two indica rice cultivars." Journal of Environmental Biology 44, no. 3 (2023): 390–95. http://dx.doi.org/10.22438/jeb/44/3/mrn-5054.

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Aim: To investigate the potential of sodium arsenite to induce physiological as well as oxidative stress at its low level exposure in tolerant and sensitive indica rice cultivars. Methodology: Rice seeds were surface sterilized using 0.1% HgCl2 for 15 min, followed by washing with distilled water. Twelve days after germination, the seedlings in one tray was kept aside as control and other trays were exposed to 50, 100, 150 and 200 μM of sodium arsenite. After treatment for 24 and 48hr, leaves were harvested and washed with distilled water to estimate the level of lipid peroxidation as well as
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Sinha, B., and K. Bhattacharyya. "Arsenic speciation in rice and risk assessment of inorganic arsenic from Ghentugachhi village of Chakdaha block, Nadia, West Bengal, India." Oryza-An International Journal on Rice 57, no. 2 (2020): 85–93. http://dx.doi.org/10.35709/ory.2020.57.2.1.

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The purpose of the present study was to assess arsenic (As) speciation in rice from West Bengal, India, in order to improve understanding of the health risk posed by arsenic in Indian rice. Rice is a potentially important route of human exposure to arsenic, especially in populations with rice-based diets. However, arsenic toxicity varies greatly with species. Determination of arsenic (As) species in rice is necessary because inorganic As species are more toxic than organic As. Total arsenic was determined by inductively coupled plasma mass spectrometry; arsenite, arsenate, monomethylarsonic ac
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M., Shivashankar, Das Anusua, Kumar Mandal Badal, and Das Nirmalendu. "Plant origin quercetin in combating arsenic induced hepato-cellular damage in rat." Journal of Indian Chemical Society Vol. 89, Oct 2012 (2012): 1387–93. https://doi.org/10.5281/zenodo.5771302.

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Pharmaceutical Chemistry Division, Environmental and Analytical Chemistry Division, School of Advanced Sciences, VIT University, Vellore-632 014, Tamilnadu, India <em>E-mail</em> : badalmandal@vit.ac.in Fax : 91-416-2243092 Bio Membrane Division, Indian Institute of Chemical Biology, Kolkata-700 032, India <em>Manuscript received 25 July 2011, revised 13 January 2012, accepted 17 January 2012</em> Since there is no medicine for combating arsenic induced liver fibrosis, quercetin (QC), a plant origin drug, was used to combat oxidative stress caused by arsenic to hepatic tissues of rat. Concentr
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Natarajan, K. A. "Microbial Aspects of Acid Generation and Bioremediation with Relevance to Indian Mining." Advanced Materials Research 71-73 (May 2009): 645–48. http://dx.doi.org/10.4028/www.scientific.net/amr.71-73.645.

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The role of Acidithiobacillus group of bacteria in acid generation and heavy metal dissolution was studied with relevance to some Indian mines. Microorganisms implicated in acid generation such as Acidithiobacillus ferrooxidans, Acidithiobacillus thiooxidans and Leptospirillum ferrooxidans were isolated from abandoned mines, waste rocks and tailing dumps. Arsenite oxidizing Thiomonas and Bacillus group of bacteria were isolated and their ability to oxidize As (III) to As (V) established. Mine isolated Sulfate reducing bacteria were used to remove dissolved copper, zinc, iron and arsenic from s
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Chandra Pandey, Suresh, and Kripa Shankar Upadhyaya. "Latice Dynamical Study of Indium Arsenide (InAs)." International Journal of Scientific Engineering and Research 4, no. 10 (2016): 143–50. https://doi.org/10.70729/ijser151041.

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Kumar, Ankit. "Arsenic Contamination at District Deoria (Uttar Pradesh), India." Journal of Advanced Research in Alternative Energy, Environment and Ecology 07, no. 01 (2020): 33–36. http://dx.doi.org/10.24321/2455.3093.202010.

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Sujoy, K. Manna, K. Roy Sanjit, P. Naskar Jnan, and K. Mukherjee Ashit. "Status of urinary porphyrins and inverse correlation of porphyrins with serum B vitamins in arsenic endemic area of West Bengal, India." Journal of Indian Chemical Society Vol. 94, Nov 2017 (2017): 1227–37. https://doi.org/10.5281/zenodo.5636028.

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Regional Occupational Health Centre (Eastern), (Indian Council of Medical Research), Block DP, Sector V, Salt Lake, Kolkata-700 091, India <em>E-mail</em> : ashit_mukherjee@yahoo.com Department of Chemistry, Inorganic Chemistry Section, Jadavpur University, Kolkata-700 032, India <em>Manuscript received 27 June 2017, revised 06 November 2017, accepted 07 November 2017</em> Chronic arsenic toxicity through drinking water is still one of the major problems across the world. Bangladesh and India (particularly the state of West Bengal) are the worst affected countries with such problem. Millions o
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RUANGWISES, SUTHEP, and NONGLUCK RUANGWISES. "Concentrations of Total and Inorganic Arsenic in Fresh Fish, Mollusks, and Crustaceans from the Gulf of Thailand." Journal of Food Protection 74, no. 3 (2011): 450–55. http://dx.doi.org/10.4315/0362-028x.jfp-10-445.

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Concentrations of total and inorganic arsenic were determined in 120 samples of eight marine animals collected from the Gulf of Thailand between March and May 2008. Two species with the highest annual catch from each of four marine animal groups were analyzed: fish (Indo-Pacific mackerel and goldstripe sardine), bivalves (green mussel and blood cockle), cephalopods (pharaoh cuttlefish and Indian squid), and crustaceans (banana prawn and swimming crab). Concentrations of inorganic arsenic based on wet weight ranged from 0.012 μg/g in Indian squids to 0.603 μg/g in blood cockles. Average percent
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Anderson, Darcy M., Annabelle Black Bear, Tracy Zacher, et al. "Implementing a Community-Led Arsenic Mitigation Intervention for Private Well Users in American Indian Communities: A Qualitative Evaluation of the Strong Heart Water Study Program." International Journal of Environmental Research and Public Health 20, no. 3 (2023): 2681. http://dx.doi.org/10.3390/ijerph20032681.

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Arsenic is a naturally occurring toxicant in groundwater, which increases cancer and cardiovascular disease risk. American Indian populations are disproportionately exposed to arsenic in drinking water. The Strong Heart Water Study (SHWS), through a community-centered approach for intervention development and implementation, delivered an arsenic mitigation program for private well users in American Indian communities. The SHWS program comprised community-led water arsenic testing, point-of-use arsenic filter installation, and a mobile health program to promote sustained filter use and maintena
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Sharma, Neha, Monika Koul, Naveen Chandra Joshi, Laurent Dufossé, and Arti Mishra. "Fungal-Bacterial Combinations in Plant Health under Stress: Physiological and Biochemical Characteristics of the Filamentous Fungus Serendipita indica and the Actinobacterium Zhihengliuella sp. ISTPL4 under In Vitro Arsenic Stress." Microorganisms 12, no. 2 (2024): 405. http://dx.doi.org/10.3390/microorganisms12020405.

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Fungal-bacterial combinations have a significant role in increasing and improving plant health under various stress conditions. Metabolites secreted by fungi and bacteria play an important role in this process. Our study emphasizes the significance of secondary metabolites secreted by the fungus Serendipita indica alone and by an actinobacterium Zhihengliuella sp. ISTPL4 under normal growth conditions and arsenic (As) stress condition. Here, we evaluated the arsenic tolerance ability of S. indica alone and in combination with Z. sp. ISTPL4 under in vitro conditions. The growth of S. indica and
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Dissertations / Theses on the topic "Arsenid inditý"

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Stanislav, Silvestr. "Příprava nízkodimenzionálních III-V polovodičů." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443735.

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Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE).
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Johns, Steven 1964. "Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm". Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277949.

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The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and a GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump-probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10¹⁸ and 1.0 x 10¹⁸ cm⁻³ with carrier lifetimes of ≃ 2.3 ns and ≃ 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at r
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Shah, Syed Hassan. "Study of nonlinear optical properties of indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide self-assembled quantum dots." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 97 p, 2008. http://proquest.umi.com/pqdweb?did=1460350251&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Guo, Wei. "Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE." View abstract/electronic edition; access limited to Brown University users, 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3318323.

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Noori, Atif M. "Metamorphic materials for indium arsenide transistors." Diss., Restricted to subscribing institutions, 2006. http://proquest.umi.com/pqdweb?did=1276402841&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Pon, Russell Michael. "Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185370.

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Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnA
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Pancholi, Anup. "(Indium,gallium)arsenide quantum dot materials for solar cell applications effect of strain-reducing and strain-compensated barriers on quantum dot structural and optical properties /." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 172 p, 2009. http://proquest.umi.com/pqdweb?did=1654501701&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Thesis (Ph.D.)--University of Delaware, 2008.<br>Principal faculty advisors: Valeria Gabriela Stoleru, Dept. of Materials Science & Engineering; and S. Ismat Shah, Dept. of Materials Science. Includes bibliographical references.
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Martinez, Marino Juan. "Evaluation of gallium arsenic(x) antimony(1-x)/indium(y) aluminum(1-y) arsenicp-channel HIGFETs for complementary technologies." Diss., The University of Arizona, 1993. http://hdl.handle.net/10150/186496.

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This work shows the viability of p-channel GaAsₓSb₁₋ₓ/In(y)Al(1-y)As HIGFETs for III-V compound-based complementary technologies to compete with silicon CMOS for specialized applications. Monte Carlo simulation was used to establish that even for the most extreme cases of alloy scattering GaAsₓSb₁₋ₓ on InP has a higher bulk hole mobility than GaAs. Process development demonstrated that H₂O:H₂O₂:H₃PO₄:L-tartaric acid-based etchant solutions provide a reliable etchant with a selectivity of approximately 2:1 of GaAsₓSb₁₋ₓ over In(y)Al(1-y)As. Process development also showed that Ti/Au was the mos
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Hsu, Chia Chen. "The nonlinear optical properties of KTP, 4BCMU, and gallium indium arsenide/aluminum indium arsenide multiple quantum well." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185611.

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In this dissertation different nonlinear materials for applications in frequency generation and nonlinear optical switching devices are investigated. The important aspects for efficient frequency generation in a three-wave mixing interaction are introduced. Blue laser light generation by sum frequency mixing in a KTP crystal and the production of tunable infrared in a LiIO₃ crystal by difference frequency mixing are demonstrated. The third-order optical nonlinear susceptibities of single-crystaline and spin-coated amorphous P-4BCMU thin films are measured by third harmonic generation. The effe
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Krol, Mark Francis. "Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures." Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187240.

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An experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from the narrow well (NW) to the wide well (WW) at least as fast as electrons. At high carrier densities a two component decay is observed, consistent with phase-space filling and space-charge effects blocking tunneling carriers. The fast transfer of electrons was confirmed to be a LO-phonon assisted pro
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Books on the topic "Arsenid inditý"

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Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. Wiley, 1992.

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Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Hartung-Gorre, 2002.

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M, Carter Janet, Rosebud Sioux Tribe, South Dakota Geological Survey, and Geological Survey (U.S.), eds. Source, occurrence, and extent of arsenic in the Grass Mountain area of the Rosebud Indian Reservation, South Dakota. U.S. Dept. of the Interior, U.S. Geological Survey, 1998.

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Pallab, Bhattacharya, ed. Properties of lattice-matched and strained indium gallium arsenide. INSPEC, the Institution of Electrical Engineers, 1993.

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Pallab, Bhattacharya, ed. Properties of lattice-matched and strained indium gallium arsenide. INSPEC, the Institution of Electrical Engineers, 1993.

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Pallab, Bhattacharya, and INSPEC (Information service), eds. Properties of lattice-matched and strained indium gallium arsenide. INSPEC, Institution of Electrical Engineers, 1993.

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service), INSPEC (Information, and Knovel (Firm), eds. Properties of lattice-matched and strained indium gallium arsenide. IEE, 1993.

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Foundation, Observer Research, ed. Arming the Indian arsenal: Challenges and policy options. Rupa & Co. in association with Observer Research Foundation, 2009.

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Mohanty, Deba R. Arming the Indian arsenal: Challenges and policy options. Rupa & Co. in association with Observer Research Foundation, 2009.

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Chris, Smith. India's ad hoc arsenal: Arms procurement in historical perspective. Oxford University Press, 1994.

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Book chapters on the topic "Arsenid inditý"

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Gadgil, Ashok J., Susan Amrose, and Dana Hernandez. "Stopping Arsenic Poisoning in India." In Introduction to Development Engineering. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-86065-3_14.

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AbstractIn the 1980s, most households of rural India and Bangladesh switched from surface sources for their drinking water – which was causing high incidence of diarrheal disease – to groundwater extracted by hand pumps. However, for tens of millions of people, this groundwater contained high levels of arsenic, which has led to what the WHO has called the “largest mass poisoning of a population in history.” This case study describes the development of ElectroChemical Arsenic Remediation (ECAR), which is a technology that uses iron electrodes to oxidize and remove aqueous arsenic from drinking
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Misra, Modhurima, and Amitava Bandyopadhyay. "Arsenic Problem in Groundwater Sources and Treatment Technologies, Indian Experiences." In Water and Wastewater Management. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-72589-0_14.

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Saravanakumar, R. "III–V Heterostructure Devices for High-Frequency Applications." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-3.

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Vamsidhar, Y. "Influence of Dual Channel and Drain-Side Recess Length in Double-Gate InAs HEMTs." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-9.

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Godwinraj, D. "III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-2.

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Kumar, M. Arun. "Single-Gate (SG) InAs-based HEMT Architecture for THz Applications." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-6.

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Nagarjuna, T. "Overview of THz Applications." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-4.

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Mahesh, V. "Device and Simulation Framework of InAs HEMTs." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-5.

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Manna, Sanhita. "Introduction to III–V Materials and HEMT Structure." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-1.

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Mishra, Girish Shankar. "Noise Analysis in Dual Quantum Well InAs-based Double-Gate (DG) HEMTs." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-10.

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Conference papers on the topic "Arsenid inditý"

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Tran, Minh, Zeyu Zhang, Boqiang Shen, et al. "Heterogeneous Photonics in Visible and Beyond." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.aw3j.3.

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We present some recent advancements related to extending the wavelength range of heterogeneous silicon nitride photonic platform, achieved by integrating indium-phosphide, gallium-arsenide and gallium-nitride based active components in a wafer scale process.
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Saurova, Tetiana, and Victoria Bors. "Scattering Mechanisms in Arsenide Indium." In 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783663.

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Магомадов, Р. М., and Р. Р. Юшаев. "INFLUENCE OF THE SEMICONDUCTOR CONDUCTIVITY ON THE VALUE OF THE SCHOTTKY BARRIER." In «АКТУАЛЬНЫЕ ВОПРОСЫ СОВРЕМЕННОЙ НАУКИ: ТЕОРИЯ, ТЕХНОЛОГИЯ, МЕТОДОЛОГИЯ И ПРАКТИКА». Международная научно-практическая онлайн-конференция, приуроченная к 60-ти летию член-корреспондента Академии наук ЧР, доктора технических наук, профессора Сайд-Альви Юсуповича Муртазаева. Crossref, 2021. http://dx.doi.org/10.34708/gstou.conf..2021.20.82.001.

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В данной работе исследовано влияние проводимости полупроводника на Барьер Шотки в контакте металл полупроводник. В качестве объектов исследования выбраны контакты с алюминием следующих полупроводников: арсенида индия(InAs), арсенида галлия (GaAs)антимонида индия(InSb) и сульфида кадмия(CdS). Выбор этих кристаллов связан с тем, что ширина запрещенной зоны этих полупроводников возрастает от Еg = 0,18 эВ у арсенида индия до Еg = 2,53 эВ у сульфида кадмия, что соответствует поставленной задаче в данной работе. In this paper, the influence of the conductivity of a semiconductor on the Schottky Barr
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Chao, Paul C. P., Jian-Ruei Chen, Che-Hung Tsai, and Wei-Dar Chen. "Design and Realization of High Resolution (640×480) SWIR Image Acquisition System." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2917.

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Imaging technology has been in revolutionary progresses in decades with well-developed semiconductor and memory industries. Silicon sensors are used in most of camera and DV, since silicon is the best material for visible light imaging (wavelength from 400nm∼700nm). Short wave infrared (SWIR) requires indium gallium arsenide (InGaAs), composed of chemical compounds including indium arsenide (InAs) and gallium arsenide (GaAs), to cover SWIR spectrum. Wavelength of typical SWIR is defined between 0.7um and 2.5um; SWIR cameras focus on wavelength between 0.9um∼1.7um (In0.53Ga0.47As). Unlike Mid-W
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Lyamkina, Anna A., Dmitriy V. Dmitriev, Sergey P. Moshchenko, and Alexander I. Toropov. "Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate." In 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2009. http://dx.doi.org/10.1109/edm.2009.5173921.

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Komljenovic, Tin, Minh Tran, Zeyu Zhang, et al. "Broadband Heterogeneous Silicon-Nitride Photonics." In CLEO: Applications and Technology. Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_at.2023.am4n.1.

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We present some recent results related to extending the wavelength range of heterogeneous silicon nitride photonic platform by integrating indium-phosphide and gallium-arsenide based active components in a wafer scale process.
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Mellor, P. J. T., and J. Herniman. "Barrier Ohmic Contacts To Indium Gallium Arsenide." In 1st Intl Conf on Idium Phosphide and Related Materials for Advanced Electronic and Optical Devices, edited by Louis J. Messick and Rajendra Singh. SPIE, 1989. http://dx.doi.org/10.1117/12.962020.

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Cohen, Marshall J., Robert M. Brubaker, J. Christopher Dries, and Martin H. Ettenberg. "Indium gallium arsenide photodiode arrays for optical communications." In ITCom 2001: International Symposium on the Convergence of IT and Communications, edited by Robert Raymond, Pradip K. Srimani, Renjeng Su, and Carl W. Wilmsen. SPIE, 2001. http://dx.doi.org/10.1117/12.448010.

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Lyamkina, Anna A., Dmitriy V. Dmitriev, Sergey P. Moshchenko, Yuri G. Galitsyn, and Alexander I. Toropov. "Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide." In 2009 International Student School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies (INTERNANO). IEEE, 2009. http://dx.doi.org/10.1109/internano.2009.5335644.

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Votsi, H., B. Mirkhaydarov, S. Gillespie, P. Young, M. Shkunov, and P. H. Aaen. "Modelling of Solution Processed Indium Arsenide Nanowire Microwave Switches." In 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018. IEEE, 2018. http://dx.doi.org/10.1109/mwsym.2018.8439648.

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Reports on the topic "Arsenid inditý"

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Wells, Richard L., Colin G. Pitt, Andrew T. McPhail, Andrew P. Purdy, Soheila Shafieezad, and R. B. Hallock. The Use of Tris(trimethylsilyl)arsine to Prepare Gallium Arsenide and Indium Arsenide. Defense Technical Information Center, 1988. http://dx.doi.org/10.21236/ada200887.

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Shan, Yina, Praem Mehta, Duminda Perera, and Yurissa Yarela. Cost and Efficiency of Arsenic Removal from Groundwater: A Review. United Nations University Institute for Water, Environment and Health, 2019. http://dx.doi.org/10.53328/kmwt2129.

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Abstract:
Hundreds of millions of people worldwide are exposed to arsenic-contaminated drinking water, leading to significant health complications, and social and economic losses. Currently, a wide range of technologies exists to remove arsenic from water. However, despite ongoing research on such technologies, their widespread application remains limited. To bridge this gap, this review aims to compare the effectiveness and costs of various arsenic remediation technologies while considering their practical applicability. A search conducted using the Medline and Embase databases yielded 31 relevant arti
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Olsen, Gregory H., and Marshall J. Cohen. An Indium Gallium Arsenide Charge-Coupled Device (CCD) for 1-3 micron Imaging. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada266134.

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Chiu, David Y., and Troy Alexander. Development of an Indium Gallium Arsenide (InGaAs) Short Wave Infrared (SWIR) Line Scan Imaging System. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada549860.

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Delaire, Caroline. Improving Access to Safe Water in West Bengal, India: From Arsenic and Bacteria Removal to Household Behavior Change. Office of Scientific and Technical Information (OSTI), 2016. http://dx.doi.org/10.2172/1481915.

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Sengupta, S., A. Rencz, G. Hall, T. Pal, P. Mukherjee, and R. Beckie. Report of activities 2003-2005: Development of a mitigation strategy to manage risk from arsenic toxicity in groundwater of West Bengal, India. Phase 1: naturally occurring arsenic in groundwater: a preliminary investigation of sources and release mechanisms, Gotra, West Bengal, India. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 2007. http://dx.doi.org/10.4095/224376.

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Wells, R. L., L. J. Jones, A. T. McPhail, and A. Alvanipour. Synthesis and Characterization of Indium-Arsenic Compounds Containing a Four-Membered In-Ad-In-As or In-As-In-Cl Ring: Crystal Structures of ((Me3SiCH2) 2InAs(SiMe3)2)2 and (Me3SiCH2)2InAs(SiMe3)2In(CH2SiMe3)2Cl. Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada232368.

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Source, occurrence, and extent of arsenic in the Grass Mountain area of the Rosebud Indian Reservation, South Dakota. US Geological Survey, 1997. http://dx.doi.org/10.3133/wri974286.

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