Relevant bibliographies by topics / Arsenid inditý

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Arsenid inditý'

Author: Grafiati
Published: 28 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Arsenid inditý"

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Sinha, B., and K. Bhattacharyya. "Arsenic speciation in rice and risk assessment of inorganic arsenic from Ghentugachhi village of Chakdaha block, Nadia, West Bengal, India." Oryza-An International Journal on Rice 57, no. 2 (2020): 85–93. http://dx.doi.org/10.35709/ory.2020.57.2.1.

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The purpose of the present study was to assess arsenic (As) speciation in rice from West Bengal, India, in order to improve understanding of the health risk posed by arsenic in Indian rice. Rice is a potentially important route of human exposure to arsenic, especially in populations with rice-based diets. However, arsenic toxicity varies greatly with species. Determination of arsenic (As) species in rice is necessary because inorganic As species are more toxic than organic As. Total arsenic was determined by inductively coupled plasma mass spectrometry; arsenite, arsenate, monomethylarsonic ac
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Natarajan, K. A. "Microbial Aspects of Acid Generation and Bioremediation with Relevance to Indian Mining." Advanced Materials Research 71-73 (May 2009): 645–48. http://dx.doi.org/10.4028/www.scientific.net/amr.71-73.645.

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The role of Acidithiobacillus group of bacteria in acid generation and heavy metal dissolution was studied with relevance to some Indian mines. Microorganisms implicated in acid generation such as Acidithiobacillus ferrooxidans, Acidithiobacillus thiooxidans and Leptospirillum ferrooxidans were isolated from abandoned mines, waste rocks and tailing dumps. Arsenite oxidizing Thiomonas and Bacillus group of bacteria were isolated and their ability to oxidize As (III) to As (V) established. Mine isolated Sulfate reducing bacteria were used to remove dissolved copper, zinc, iron and arsenic from s
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RUANGWISES, SUTHEP, and NONGLUCK RUANGWISES. "Concentrations of Total and Inorganic Arsenic in Fresh Fish, Mollusks, and Crustaceans from the Gulf of Thailand." Journal of Food Protection 74, no. 3 (2011): 450–55. http://dx.doi.org/10.4315/0362-028x.jfp-10-445.

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Concentrations of total and inorganic arsenic were determined in 120 samples of eight marine animals collected from the Gulf of Thailand between March and May 2008. Two species with the highest annual catch from each of four marine animal groups were analyzed: fish (Indo-Pacific mackerel and goldstripe sardine), bivalves (green mussel and blood cockle), cephalopods (pharaoh cuttlefish and Indian squid), and crustaceans (banana prawn and swimming crab). Concentrations of inorganic arsenic based on wet weight ranged from 0.012 μg/g in Indian squids to 0.603 μg/g in blood cockles. Average percent
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Thakur, Sapna, Shruti Choudhary, Preeti Dubey, and Pankaj Bhardwaj. "Comparative transcriptome profiling reveals the reprogramming of gene networks under arsenic stress in Indian mustard." Genome 62, no. 12 (2019): 833–47. http://dx.doi.org/10.1139/gen-2018-0152.

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Arsenic is a widespread toxic metalloid that is classified as a class I carcinogen known to cause adverse health effects in humans. In the present study, we investigated arsenic accumulation potential and comparative gene expression in Indian mustard. The amount of arsenic accumulated in shoots varied in the range of 15.99–1138.70 mg/kg on a dry weight basis among five cultivars. Comparative expression analysis revealed 10 870 significantly differentially expressed genes mostly belonging to response to stress, metabolic processes, signal transduction, transporter activity, and transcription re
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Hossain, M. Amir, Amitava Mukharjee, Mrinal Kumar Sengupta, et al. "Million Dollar Arsenic Removal Plants in West Bengal, India: Useful or Not?" Water Quality Research Journal 41, no. 2 (2006): 216–25. http://dx.doi.org/10.2166/wqrj.2006.025.

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Abstract The effectiveness of arsenic removal plants (ARPs) to provide safe water was evaluated based on a study of 577 ARPs out of 1900 installed in 5 arsenic-affected districts of West Bengal, India. Out of 577, 145 (25.1%) were found in defunct condition. Both raw and filtered water from 305 ARPs were analyzed for total arsenic concentration. Forty-eight ARPs were installed despite raw water arsenic concentrations below the Indian standard (50 µg/L) and in 22 cases even below the WHO guideline value (10 µg/L). Among the 264 ARPs having raw water arsenic above 50 µg/L, 140 (53.1%) and 73 (27
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Rong, Hua, Hou Shugui, Li Yuansheng, et al. "Arsenic record from a 3 m snow pit at Dome Argus, Antarctica." Antarctic Science 28, no. 4 (2016): 305–12. http://dx.doi.org/10.1017/s0954102016000092.

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AbstractThis study presents an arsenic concentration time series from 1964–2009 at Dome Argus, Antarctica. The data show a very large increase in arsenic concentration from the mid-1980s to the late-1990s (by a factor of~22) compared with the values before the mid-1980s. This increase is likely to be related to the increased copper smelting in South America. Arsenic concentration then decreased in the late-1990s, most probably as a result of environmental regulations in South America. The sudden increase in arsenic concentration observed at Dome Argus coincides with similar increases observed
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Islam, M. N., B. K. Das, and M. E. Huque. "Arsenic Accumulation in Common Vegetables from Irrigation." Journal of Scientific Research 4, no. 3 (2012): 675–88. http://dx.doi.org/10.3329/jsr.v4i3.10494.

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Arsenic-accumulation pattern in eight types of vegetables commonly found in Bangladesh were studied using successive irrigation/harvesting technique. The study also included to find the threshold amount of arsenic that leads to exceed the maximum permissible limit (MPL) in those vegetables and several water-soil-plant arsenic concentration models. Total arsenic concentrations were measured by Hydride Generation–Atomic Absorption Spectroscopy (HG-AAS) technique. Arsenic-accumulation decreased in the order: Arum > Arum leaf > Amaranth > Brinjal > Radish > Indian Spinach > Carro
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Pal, Dilip K., Akash Agrawal, Sabnam Ghosh, and Amlan Ghosh. "Association of arsenic with recurrence of urinary bladder cancer." Tropical Doctor 50, no. 4 (2020): 325–30. http://dx.doi.org/10.1177/0049475520930155.

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Arsenic is known to be an important aetiological factor for the development of urinary bladder cancer. It is known to be found excessively in ground water in certain geographical areas, including West Bengal. We have studied patients with recurrent bladder cancer from different areas of this Indian state and correlated arsenic as a causative aetiological factor for development and aggressiveness of the biological behaviour of urinary cancer. We included 31 patients from various parts of West Bengal state with recurrent bladder cancer who were operated in our institute. Their clinical and resid
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Kumar, Munesh, Rajesh Thakur, and Sandeep Kumar. "Comparative Efficacy of Syzygium Cumini Seed Extracts in Alleviating Arsenic-Induced Hepatotoxicity and Blood Cell Genotoxicity in Wistar Albino Rats." Biomedical & Pharmacology Journal 12, no. 3 (2019): 1329–38. http://dx.doi.org/10.13005/bpj/1761.

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Syzygium cumini is well known for its medicinal values in the indigenous Indian system of medicine. This study was designed to evaluate the protective effect of methanolic (SCM), ethanolic (SCE) and aqueous (SCA) extracts of Syzygium cumini seeds on arsenic-induced blood cell genotoxicity and hepatotoxicity in Wistar albino rats. Rats were divided into five groups: (1) control, (2) arsenic, (3) SCM, (4) SCE and (5) SCA. After completion of 60 days treatment period, comet assays were performed on isolated blood lymphocytes and serum marker assays indicative of hepatic toxicity were carried out.
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Valappil, Ashraf V., and Abraham Mammen. "Subacute Arsenic Neuropathy: Clinical and Electrophysiological Observations." Journal of Neurosciences in Rural Practice 10, no. 03 (2019): 529–32. http://dx.doi.org/10.1055/s-0039-1695693.

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AbstractWe report a patient who developed subacute peripheral neuropathy following ingestion of a traditional medicine for obesity. A 9-year-old girl who had a residual equinus varus deformity and sphincter disturbance due to pelvic ganglioneuroma presented with subacute sensorimotor peripheral neuropathy of 2 weeks duration. Her symptoms started 3 weeks after she started taking a locally made traditional medicine for obesity. She had no other systemic features of arsenic toxicity. She had Mee's lines on her nails and high serum arsenic levels and 24-hour urine levels confirmed the diagnosis o
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Dissertations / Theses on the topic "Arsenid inditý"

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Stanislav, Silvestr. "Příprava nízkodimenzionálních III-V polovodičů." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443735.

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Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE).
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Johns, Steven 1964. "Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm". Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277949.

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The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and a GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump-probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10¹⁸ and 1.0 x 10¹⁸ cm⁻³ with carrier lifetimes of ≃ 2.3 ns and ≃ 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at r
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Shah, Syed Hassan. "Study of nonlinear optical properties of indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide self-assembled quantum dots." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 97 p, 2008. http://proquest.umi.com/pqdweb?did=1460350251&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Guo, Wei. "Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE." View abstract/electronic edition; access limited to Brown University users, 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3318323.

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Noori, Atif M. "Metamorphic materials for indium arsenide transistors." Diss., Restricted to subscribing institutions, 2006. http://proquest.umi.com/pqdweb?did=1276402841&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Pon, Russell Michael. "Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185370.

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Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnA
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Pancholi, Anup. "(Indium,gallium)arsenide quantum dot materials for solar cell applications effect of strain-reducing and strain-compensated barriers on quantum dot structural and optical properties /." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 172 p, 2009. http://proquest.umi.com/pqdweb?did=1654501701&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Thesis (Ph.D.)--University of Delaware, 2008.<br>Principal faculty advisors: Valeria Gabriela Stoleru, Dept. of Materials Science & Engineering; and S. Ismat Shah, Dept. of Materials Science. Includes bibliographical references.
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Martinez, Marino Juan. "Evaluation of gallium arsenic(x) antimony(1-x)/indium(y) aluminum(1-y) arsenicp-channel HIGFETs for complementary technologies." Diss., The University of Arizona, 1993. http://hdl.handle.net/10150/186496.

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This work shows the viability of p-channel GaAsₓSb₁₋ₓ/In(y)Al(1-y)As HIGFETs for III-V compound-based complementary technologies to compete with silicon CMOS for specialized applications. Monte Carlo simulation was used to establish that even for the most extreme cases of alloy scattering GaAsₓSb₁₋ₓ on InP has a higher bulk hole mobility than GaAs. Process development demonstrated that H₂O:H₂O₂:H₃PO₄:L-tartaric acid-based etchant solutions provide a reliable etchant with a selectivity of approximately 2:1 of GaAsₓSb₁₋ₓ over In(y)Al(1-y)As. Process development also showed that Ti/Au was the mos
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Hsu, Chia Chen. "The nonlinear optical properties of KTP, 4BCMU, and gallium indium arsenide/aluminum indium arsenide multiple quantum well." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185611.

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In this dissertation different nonlinear materials for applications in frequency generation and nonlinear optical switching devices are investigated. The important aspects for efficient frequency generation in a three-wave mixing interaction are introduced. Blue laser light generation by sum frequency mixing in a KTP crystal and the production of tunable infrared in a LiIO₃ crystal by difference frequency mixing are demonstrated. The third-order optical nonlinear susceptibities of single-crystaline and spin-coated amorphous P-4BCMU thin films are measured by third harmonic generation. The effe
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Krol, Mark Francis. "Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures." Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187240.

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An experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from the narrow well (NW) to the wide well (WW) at least as fast as electrons. At high carrier densities a two component decay is observed, consistent with phase-space filling and space-charge effects blocking tunneling carriers. The fast transfer of electrons was confirmed to be a LO-phonon assisted pro
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Books on the topic "Arsenid inditý"

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Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Hartung-Gorre, 2002.

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Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. Wiley, 1992.

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Mohanty, Deba R. Arming the Indian arsenal: Challenges and policy options. Rupa & Co. in association with Observer Research Foundation, 2009.

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Foundation, Observer Research, ed. Arming the Indian arsenal: Challenges and policy options. Rupa & Co. in association with Observer Research Foundation, 2009.

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Chris, Smith. India's ad hoc arsenal: Arms procurement in historical perspective. Oxford University Press, 1994.

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Prozessverständnis einer Naturkatastrophe: Eine geo- und hydrochemische Untersuchung der regionalen Arsen-Anreicherung im Grundwasser West-Bengalens (Indien). Universitätsverlag, 2005.

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Biswas, Ayan. A Framework for Rural Drinking Water Quality Management (WQM): Collating Experiences from the Voluntary Sector. Edited by Rima Kashyap. Arghyam, 2012.

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Huber, Alex. Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design. Hartung-Gorre, 2000.

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Blaser, Markus. Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication. Hartung-Gorre, 1997.

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Adachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, Inas, Gaas, GaP, InGaAs and InGaAsP. Wiley & Sons, Limited, John, 2005.

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Book chapters on the topic "Arsenid inditý"

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Adachi, Sadao. "Indium Arsenide (InAs)." In Optical Constants of Crystalline and Amorphous Semiconductors. Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_26.

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Predel, B. "As-In (Arsenic - Indium)." In Ac-Ag ... Au-Zr. Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/10793176_179.

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Feenstra, R. M., and S. W. Hla. "2.3.11 InAs, Indium Arsenide." In Physics of Solid Surfaces. Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_28.

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Chowdhury, T. R., B. Kr Mandal, G. Samanta, et al. "Arsenic in groundwater in six districts of West Bengal, India: the biggest arsenic calamity in the world: the status report up to August, 1995." In Arsenic. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5864-0_9.

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Adachi, Sadao. "a-Indium Arsenide (a-lnAs)." In Optical Constants of Crystalline and Amorphous Semiconductors. Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_70.

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Shukla, Anurakti, Surabhi Awasthi, Reshu Chauhan, and Sudhakar Srivastava. "The Status of Arsenic Contamination in India." In Arsenic in Drinking Water and Food. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-8587-2_1.

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Singh, Nandita, and Om Prakash Singh. "Sustainable Arsenic Mitigation: Problems and Prospects in India." In Advances in Water Security. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-21258-2_6.

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Saravanakumar, R. "III–V Heterostructure Devices for High-Frequency Applications." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-3.

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Vamsidhar, Y. "Influence of Dual Channel and Drain-Side Recess Length in Double-Gate InAs HEMTs." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-9.

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Godwinraj, D. "III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications. CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-2.

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Conference papers on the topic "Arsenid inditý"

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Магомадов, Р. М., and Р. Р. Юшаев. "INFLUENCE OF THE SEMICONDUCTOR CONDUCTIVITY ON THE VALUE OF THE SCHOTTKY BARRIER." In «АКТУАЛЬНЫЕ ВОПРОСЫ СОВРЕМЕННОЙ НАУКИ: ТЕОРИЯ, ТЕХНОЛОГИЯ, МЕТОДОЛОГИЯ И ПРАКТИКА». Международная научно-практическая онлайн-конференция, приуроченная к 60-ти летию член-корреспондента Академии наук ЧР, доктора технических наук, профессора Сайд-Альви Юсуповича Муртазаева. Crossref, 2021. http://dx.doi.org/10.34708/gstou.conf..2021.20.82.001.

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В данной работе исследовано влияние проводимости полупроводника на Барьер Шотки в контакте металл полупроводник. В качестве объектов исследования выбраны контакты с алюминием следующих полупроводников: арсенида индия(InAs), арсенида галлия (GaAs)антимонида индия(InSb) и сульфида кадмия(CdS). Выбор этих кристаллов связан с тем, что ширина запрещенной зоны этих полупроводников возрастает от Еg = 0,18 эВ у арсенида индия до Еg = 2,53 эВ у сульфида кадмия, что соответствует поставленной задаче в данной работе. In this paper, the influence of the conductivity of a semiconductor on the Schottky Barr
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Chao, Paul C. P., Jian-Ruei Chen, Che-Hung Tsai, and Wei-Dar Chen. "Design and Realization of High Resolution (640×480) SWIR Image Acquisition System." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2917.

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Imaging technology has been in revolutionary progresses in decades with well-developed semiconductor and memory industries. Silicon sensors are used in most of camera and DV, since silicon is the best material for visible light imaging (wavelength from 400nm∼700nm). Short wave infrared (SWIR) requires indium gallium arsenide (InGaAs), composed of chemical compounds including indium arsenide (InAs) and gallium arsenide (GaAs), to cover SWIR spectrum. Wavelength of typical SWIR is defined between 0.7um and 2.5um; SWIR cameras focus on wavelength between 0.9um∼1.7um (In0.53Ga0.47As). Unlike Mid-W
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Saurova, Tetiana, and Victoria Bors. "Scattering Mechanisms in Arsenide Indium." In 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783663.

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Lyamkina, Anna A., Dmitriy V. Dmitriev, Sergey P. Moshchenko, and Alexander I. Toropov. "Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate." In 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2009. http://dx.doi.org/10.1109/edm.2009.5173921.

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Mellor, P. J. T., and J. Herniman. "Barrier Ohmic Contacts To Indium Gallium Arsenide." In 1st Intl Conf on Idium Phosphide and Related Materials for Advanced Electronic and Optical Devices, edited by Louis J. Messick and Rajendra Singh. SPIE, 1989. http://dx.doi.org/10.1117/12.962020.

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Cohen, Marshall J., Robert M. Brubaker, J. Christopher Dries, and Martin H. Ettenberg. "Indium gallium arsenide photodiode arrays for optical communications." In ITCom 2001: International Symposium on the Convergence of IT and Communications, edited by Robert Raymond, Pradip K. Srimani, Renjeng Su, and Carl W. Wilmsen. SPIE, 2001. http://dx.doi.org/10.1117/12.448010.

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Lyamkina, Anna A., Dmitriy V. Dmitriev, Sergey P. Moshchenko, Yuri G. Galitsyn, and Alexander I. Toropov. "Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide." In 2009 International Student School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies (INTERNANO). IEEE, 2009. http://dx.doi.org/10.1109/internano.2009.5335644.

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Votsi, H., B. Mirkhaydarov, S. Gillespie, P. Young, M. Shkunov, and P. H. Aaen. "Modelling of Solution Processed Indium Arsenide Nanowire Microwave Switches." In 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018. IEEE, 2018. http://dx.doi.org/10.1109/mwsym.2018.8439648.

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Greiner, Mark E., and Charles J. Martin. "Indium Arsenide Photovoltaic Detectors, Advances in Fabrication and Performance." In 30th Annual Technical Symposium, edited by Hideyoshi Nakamura. SPIE, 1986. http://dx.doi.org/10.1117/12.936523.

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Berg, Martin, Karl-Magnus Persson, Erik Lind, Henrik Sjoland, and Lars-Erik Wernersson. "Single balanced down-conversion mixer utilizing indium arsenide nanowire MOSFETs." In 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM). IEEE, 2014. http://dx.doi.org/10.1109/iciprm.2014.6880569.

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Reports on the topic "Arsenid inditý"

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Wells, Richard L., Colin G. Pitt, Andrew T. McPhail, Andrew P. Purdy, Soheila Shafieezad, and R. B. Hallock. The Use of Tris(trimethylsilyl)arsine to Prepare Gallium Arsenide and Indium Arsenide. Defense Technical Information Center, 1988. http://dx.doi.org/10.21236/ada200887.

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Olsen, Gregory H., and Marshall J. Cohen. An Indium Gallium Arsenide Charge-Coupled Device (CCD) for 1-3 micron Imaging. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada266134.

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Chiu, David Y., and Troy Alexander. Development of an Indium Gallium Arsenide (InGaAs) Short Wave Infrared (SWIR) Line Scan Imaging System. Defense Technical Information Center, 2011. http://dx.doi.org/10.21236/ada549860.

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Delaire, Caroline. Improving Access to Safe Water in West Bengal, India: From Arsenic and Bacteria Removal to Household Behavior Change. Office of Scientific and Technical Information (OSTI), 2016. http://dx.doi.org/10.2172/1481915.

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Sengupta, S., A. Rencz, G. Hall, T. Pal, P. Mukherjee, and R. Beckie. Report of activities 2003-2005: Development of a mitigation strategy to manage risk from arsenic toxicity in groundwater of West Bengal, India. Phase 1: naturally occurring arsenic in groundwater: a preliminary investigation of sources and release mechanisms, Gotra, West Bengal, India. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 2007. http://dx.doi.org/10.4095/224376.

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Wells, R. L., L. J. Jones, A. T. McPhail, and A. Alvanipour. Synthesis and Characterization of Indium-Arsenic Compounds Containing a Four-Membered In-Ad-In-As or In-As-In-Cl Ring: Crystal Structures of ((Me3SiCH2) 2InAs(SiMe3)2)2 and (Me3SiCH2)2InAs(SiMe3)2In(CH2SiMe3)2Cl. Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada232368.

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Source, occurrence, and extent of arsenic in the Grass Mountain area of the Rosebud Indian Reservation, South Dakota. US Geological Survey, 1997. http://dx.doi.org/10.3133/wri974286.

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