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1

Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. Wiley, 1992.

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2

Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Hartung-Gorre, 2002.

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3

M, Carter Janet, Rosebud Sioux Tribe, South Dakota Geological Survey, and Geological Survey (U.S.), eds. Source, occurrence, and extent of arsenic in the Grass Mountain area of the Rosebud Indian Reservation, South Dakota. U.S. Dept. of the Interior, U.S. Geological Survey, 1998.

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4

Pallab, Bhattacharya, ed. Properties of lattice-matched and strained indium gallium arsenide. INSPEC, the Institution of Electrical Engineers, 1993.

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5

Pallab, Bhattacharya, ed. Properties of lattice-matched and strained indium gallium arsenide. INSPEC, the Institution of Electrical Engineers, 1993.

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6

Pallab, Bhattacharya, and INSPEC (Information service), eds. Properties of lattice-matched and strained indium gallium arsenide. INSPEC, Institution of Electrical Engineers, 1993.

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7

service), INSPEC (Information, and Knovel (Firm), eds. Properties of lattice-matched and strained indium gallium arsenide. IEE, 1993.

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8

Foundation, Observer Research, ed. Arming the Indian arsenal: Challenges and policy options. Rupa & Co. in association with Observer Research Foundation, 2009.

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9

Mohanty, Deba R. Arming the Indian arsenal: Challenges and policy options. Rupa & Co. in association with Observer Research Foundation, 2009.

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10

Chris, Smith. India's ad hoc arsenal: Arms procurement in historical perspective. Oxford University Press, 1994.

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11

C, Papen G., and United States. National Aeronautics and Space Administration., eds. Development of advanced laser diode sources: Final report, NASA NAG 1-1861. National Aeronautics and Space Administration, 1998.

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12

C, Papen G., and United States. National Aeronautics and Space Administration., eds. Development of advanced laser diode sources: Final report, NASA NAG 1-1861. National Aeronautics and Space Administration, 1998.

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13

D, Martin R., and United States. National Aeronautics and Space Administration., eds. CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode. National Aeronautics and Space Administration, 1995.

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14

Biswas, Ayan. A Framework for Rural Drinking Water Quality Management (WQM): Collating Experiences from the Voluntary Sector. Edited by Rima Kashyap. Arghyam, 2012.

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15

Huber, Alex. Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design. Hartung-Gorre, 2000.

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16

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

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17

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

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18

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

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19

Refaat, Tamer F. InGaAsSb detectors' characterization for 2-[mu]m CO₂ lidar/DIAL applications. National Aeronautics and Space Administration, Langley Research Center, 2003.

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20

Blaser, Markus. Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication. Hartung-Gorre, 1997.

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21

United States. National Aeronautics and Space Administration., ed. Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell: Annual status report for NASA grant #NAG 3-1490. National Aeronautics and Space Administration, 1995.

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22

Adachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, Inas, Gaas, GaP, InGaAs and InGaAsP. Wiley & Sons, Limited, John, 2005.

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23

Yu, Young-June. Noise properties of InGaAs/InAlAs multiquantum-well heterostructure p-i-n photodiodes. 1989.

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24

Arming the Indian arsenal: Challenges and policy options. Rupa & Co., 2009.

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25

Hwang, Kiuchul. Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector. 1990.

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26

Park, Chinho. Studies on chemical vapor deposition in the gallium indium arsenide phosphide system. 1992.

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27

Das, Abhijit, Joyashree Roy, and Sayantan Chakrabarti. Socio-Economic Analysis of Arsenic Contamination of Groundwater in West Bengal. Springer, 2018.

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28

Das, Abhijit, Joyashree Roy, and Sayantan Chakrabarti. Socio-Economic Analysis of Arsenic Contamination of Groundwater in West Bengal. Ingramcontent, 2016.

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29

Das, Abhijit, Joyashree Roy, and Sayantan Chakrabarti. Socio-Economic Analysis of Arsenic Contamination of Groundwater in West Bengal. Springer London, Limited, 2016.

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30

Temperature dependence of photoluminescence in InGaAsP/InP strained MQW heterostructures. National Aeronautics and Space Administration, 1996.

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31

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. Taylor & Francis Group, 2023.

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32

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. CRC Press, 2021.

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33

Mohankumar, N. Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. Taylor & Francis Group, 2021.

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34

Carnegie Endowment for International Peace, ed. Atoms for war?: U.S.-Indian civilian nuclear cooperation and India's nuclear arsenal. 2006.

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35

Sharpening the Arsenal: India's Evolving Nuclear Deterrence Policy. HarperCollins Publishers, 2018.

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36

Johnston, Scott, AL Ramanathan, Abhijit Mukherjee, and Bibhash Nath. Safe and Sustainable Use of Arsenic-Contaminated Aquifers in the Gangetic Plain: A Multidisciplinary Approach. Springer, 2015.

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37

Johnston, Scott, A. L. Ramanathan, Abhijit Mukherjee, and Bibhash Nath. Safe and Sustainable Use of Arsenic-Contaminated Aquifers in the Gangetic Plain: A Multidisciplinary Approach. Springer, 2015.

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38

Source, occurrence, and extent of arsenic in the Grass Mountain Area of the Rosebud Indian Reservation, South Dakota. U. S. Department of the Interior, U. S. Geological Survey, 1998.

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39

Cobalt in hard metals and cobalt sulfate, gallium arsenide, indium phosphide, and vanadium pentoxide. International Agency for Research on Cancer, 2006.

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40

Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

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41

InGaAsSb/GaSb thermophotovoltaic cells, phase I effort: Under contract NAS3-96060. National Aeronautics and Space Administration, 1997.

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