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Dissertations / Theses on the topic 'Arsenid inditý'

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Published: 28 June 2021

Last updated: 29 July 2025

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1

Stanislav, Silvestr. "Příprava nízkodimenzionálních III-V polovodičů." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443735.

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Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE).

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2

Johns, Steven 1964. "Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm". Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277949.

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The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and a GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump-probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10¹⁸ and 1.0 x 10¹⁸ cm⁻³ with carrier lifetimes of ≃ 2.3 ns and ≃ 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at r

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3

Shah, Syed Hassan. "Study of nonlinear optical properties of indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide self-assembled quantum dots." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 97 p, 2008. http://proquest.umi.com/pqdweb?did=1460350251&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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4

Guo, Wei. "Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE." View abstract/electronic edition; access limited to Brown University users, 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3318323.

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5

Noori, Atif M. "Metamorphic materials for indium arsenide transistors." Diss., Restricted to subscribing institutions, 2006. http://proquest.umi.com/pqdweb?did=1276402841&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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6

Pon, Russell Michael. "Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185370.

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Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnA

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7

Pancholi, Anup. "(Indium,gallium)arsenide quantum dot materials for solar cell applications effect of strain-reducing and strain-compensated barriers on quantum dot structural and optical properties /." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 172 p, 2009. http://proquest.umi.com/pqdweb?did=1654501701&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Thesis (Ph.D.)--University of Delaware, 2008.<br>Principal faculty advisors: Valeria Gabriela Stoleru, Dept. of Materials Science & Engineering; and S. Ismat Shah, Dept. of Materials Science. Includes bibliographical references.

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8

Martinez, Marino Juan. "Evaluation of gallium arsenic(x) antimony(1-x)/indium(y) aluminum(1-y) arsenicp-channel HIGFETs for complementary technologies." Diss., The University of Arizona, 1993. http://hdl.handle.net/10150/186496.

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This work shows the viability of p-channel GaAsₓSb₁₋ₓ/In(y)Al(1-y)As HIGFETs for III-V compound-based complementary technologies to compete with silicon CMOS for specialized applications. Monte Carlo simulation was used to establish that even for the most extreme cases of alloy scattering GaAsₓSb₁₋ₓ on InP has a higher bulk hole mobility than GaAs. Process development demonstrated that H₂O:H₂O₂:H₃PO₄:L-tartaric acid-based etchant solutions provide a reliable etchant with a selectivity of approximately 2:1 of GaAsₓSb₁₋ₓ over In(y)Al(1-y)As. Process development also showed that Ti/Au was the mos

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9

Hsu, Chia Chen. "The nonlinear optical properties of KTP, 4BCMU, and gallium indium arsenide/aluminum indium arsenide multiple quantum well." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185611.

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In this dissertation different nonlinear materials for applications in frequency generation and nonlinear optical switching devices are investigated. The important aspects for efficient frequency generation in a three-wave mixing interaction are introduced. Blue laser light generation by sum frequency mixing in a KTP crystal and the production of tunable infrared in a LiIO₃ crystal by difference frequency mixing are demonstrated. The third-order optical nonlinear susceptibities of single-crystaline and spin-coated amorphous P-4BCMU thin films are measured by third harmonic generation. The effe

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10

Krol, Mark Francis. "Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures." Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187240.

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An experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from the narrow well (NW) to the wide well (WW) at least as fast as electrons. At high carrier densities a two component decay is observed, consistent with phase-space filling and space-charge effects blocking tunneling carriers. The fast transfer of electrons was confirmed to be a LO-phonon assisted pro

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11

Affentauschegg, Cedric M. "Properties of indium arsenide surfaces and heterostructures /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1999. http://wwwlib.umi.com/cr/ucsd/fullcit?p9952651.

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12

Shi, Yushan. "X-ray structural studies of heteroepitaxy of gallium-indium arsenide on gallium arsenide." Thesis, McGill University, 1992. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=39367.

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This thesis presents the techniques and results of our x-ray structural studies of strained Ga$ sb{1-x}$In$ sb{x}$As epilayers grown on GaAs (001) by metallorganic chemical vapor deposition.<br>By combining conventional x-ray techniques with newly developed glancing incidence and reflectivity measurements, we study both the out-of-plane and the in-plane structure. We also obtain direct information on the mechanisms of the structural relaxation which occurs in these systems. The techniques we have used are based on using a conventional x-ray source and could be widely used to characterize and s

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13

Haysom, Joan E. "Quantum well intermixing of indium gallium arsenide(phosphorus)/indium phosphorus heterostructures." Thesis, University of Ottawa (Canada), 2001. http://hdl.handle.net/10393/9400.

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This thesis studies several aspects of the interdiffusion of InGaAs(P)/InP quantum well (QW) heterostructures, from the fundamental defect mechanisms, through optimization of processing parameters, to novel device applications. Conclusions from each of these areas have been drawn which further the scientific understanding and the manufacturability of the technique. The thermal stability of a series of different wafers is studied to highlight how poor quality of growth can cause increased interdiffusion, and to review the requirements for achieving repeatable annealing. Purposeful and controlle

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14

Boyle, Jonathan. "Bandstructure engineering of indium arsenide quantum dots in gallium arsenide antimonide barriers for photovoltaic applications." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 92 p, 2008. http://proquest.umi.com/pqdweb?did=1605158181&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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15

Unal, Ozer. "Interface studies in silicon nitride/silicon carbide and gallium indium arsenide/gallium arsenide systems." Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1059501714.

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16

Kerr, William. "Structural and optical studies of indium gallium arsenide/gallium arsenide quantum dot molecules for terahertz applications." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 80 p, 2006. http://proquest.umi.com/pqdweb?did=1203586781&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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17

Bergman, Joshua. "Development of Indium Arsenide Quantum Well Electronic Circuits." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5033.

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This dissertation focuses on the development of integrated circuits that employ InAs quantum well electronic devices. There are two InAs quantum well electronic devices studied in this work, the first being the pseudomorphic InAs/In₀.₅₃Ga₀.₄₇As/AlAs resonant tunneling diode (RTD) grown on an InP substrate, and the second being the InAs/AlSb HEMT. Because of there is no semi-insulating substrate near the InAs lattice constant of 6.06 Å this work develops monolithic and hybrid integration methods to realize integrated circuits. For the case of hybrid RTD circuits, a thin-film integration meth

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18

Singh, David. "AB initio calculations of the properties of indium antimonide and indium arsenide." Thesis, University of Ottawa (Canada), 1985. http://hdl.handle.net/10393/5016.

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19

Hoffmann, Eric A. 1982. "The thermoelectric efficiency of quantum dots in indium arsenide/indium phosphide nanowires." Thesis, University of Oregon, 2009. http://hdl.handle.net/1794/10552.

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xi, 193 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.<br>State of the art semiconductor materials engineering provides the possibility to fabricate devices on the lower end of the mesoscopic scale and confine only a handful of electrons to a region of space. When the thermal energy is reduced below the energetic quantum level spacing, the confined electrons assume energy levels akin to the core-shell structure of natural atoms. Such "artificial atoms", also known as quantum dots, can be lo

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20

Sourribes, M. J. L. "Electronic transport in indium arsenide nanowires grown on silicon." Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1435415/.

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Indium arsenide (InAs) nanowires are attracting a growing interest in the semiconductor industry as their remarkable properties make them ideal candidates for future applications in a wide variety of electronic, photonic and sensing devices. In the present work, InAs nanowires are grown via solid-source molecular beam epitaxy on Si (111) substrates without the use of heterocatalytic nanoparticle seeds. The native oxide layer forming easily on InAs nanowires must be removed prior to metallisation to achieve highly transparent contacts. We present a systematic comparative study of the contact re

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21

MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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22

Chatterjee, Suvabrata. "Groundwater management in the Arsenic belt of India." Thesis, Queen's University Belfast, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.486050.

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The high arsenic content of the groundwater in the Holocene aquifer of the Bengal delta plain is unique and elusive in the extent of its exposure causing a threat to the lives of millions of people in the region. The thesis presents a general review on the arsenic contamination of the aquifer in the region with special emphasis on the mobilisation and mitigation issues and stresses the need for the holistic approach for sustainable development of the groundwater resource. A contingent valuation study ( CVM) was conducted to survey the residents of a arsenic affected village about their willing

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23

Swaminathan, Krishna. "Room-temperature aluminum gallium arsenic antimonide/indium gallium arsenic antimonide heterojunction phototransistors for the 2 micron region." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 83 p, 2009. http://proquest.umi.com/pqdweb?did=1654487611&sid=7&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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24

Eastridge, Emily. "ARSENIC HETEROGENEITY IN AQUIFER SEDIMENTS FROM WEST BENGAL, INDIA." UKnowledge, 2011. http://uknowledge.uky.edu/ees_etds/3.

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Multiple studies in the Bengal basin have shown that elevated As in groundwater coincides with reduced, relatively dark sediments of Himalayan provenance. In West Bengal state (India), As concentrations > 10 μg/L tend to occur east of the River Bhagirathi-Hoogly, the main distributary of the Ganges. Associations among sediment chemistry and mineralogy for four cores from either side of the Bhagirathi-Hoogly (cores 1 and 2 to the east, 3 and 4 to the west) in Murshidabad district were investigated. Ten sediment samples were collected from each boring at various depths to a maximum of 38 to 43 m

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25

Eassa, Nahswa Abo Alhassan Eassa. "Surface modifications of InAs: effect of chemical processing on electronic structure and photoluminescent properties." Thesis, Nelson Mandela Metropolitan University, 2012. http://hdl.handle.net/10948/8714.

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In this thesis, the effects of various chemical treatments on the surface modification of bulk InAs are investigated. The study focuses on the chemical processes that occur upon the exposure of the surface to sulphur-, chlorine- and bromine-containing solutions and oxygen, and the resulting changes to the electronic structure of the surface, as deduced from photoluminescence (PL) measurements, X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), Raman scattering and scanning electron microscopy (SEM). Three processing treatments were evaluated: i) treatment with sulphur-b

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26

Krzyzewski, Tomaz Jan. "Surface processes, morphology and reconstruction in InAs/GaAs heteroepitaxy." Thesis, Imperial College London, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.272384.

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27

Masaki, Michael Masakichi 1975. "Design, modeling, and optimization of indium arsenide diodes for microscale thermophotovoltaics." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/86606.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2001.<br>Includes bibliographical references (p. 86-88).<br>by Michael Masakichi Masaki.<br>S.M.

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28

Steinbrecher, Gregory R. "Indium arsenide quantum dots for single photons in the communications band." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/85227.

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Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2013.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 75-78).<br>This thesis presents work towards engineering and characterizing epitaxial Indium Arsenide (InAs) quantum dots as single photon sources in the optical communications C-Band (Conventional Band; 1535 nm-1565 nm wave

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29

Gotthold, David William. "Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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30

Benzaquen, Roberto. "Photoluminescence of heavily zinc-doped gallium arsenide and gallium indium arsenide grown by low-pressure metal organic vapour phase epitaxy." Thesis, University of Ottawa (Canada), 1991. http://hdl.handle.net/10393/7891.

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Zn-doped, p-type, GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ samples grown by low-pressure metal organic vapour phase epitaxy with free carrier concentrations in the range of n = 4.3 $\times$ 10$\sp {\rm cm}\sp{-3}$ (nominally undoped)--p = 1.95 x 10$\sp{20} {\rm cm}\sp{-3}$ at room temperature have been studied by temperature-dependent photoluminescence. At low doping levels, recombinations involving discrete impurity states and free excitons provided measurement of both the 5 K band gap ($E\sb{g}(5)=(1.296\pm0.003)$ eV) and the zinc acceptor binding energy $(E(Zn\sp0)=(0.025\pm0.003)$ eV) in t

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31

Chowdhury, Ahmedul Chemical Sciences &amp Engineering Faculty of Engineering UNSW. "Development of low-cost systems for safe drinking water in areas of Bangladesh and India affected by arsenic." Publisher:University of New South Wales. Chemical Sciences & Engineering, 2009. http://handle.unsw.edu.au/1959.4/43340.

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Safe water options for five arsenic-affected villages (Sarupie, Manikganj; Daniapara, Shirajdekhan; Babutepara, Muradnagar; Iruaien, Laksham; Rahulllabad, Nabinagar) in central Bangladesh were studied in order to assist the local people and to obtain an indication of general solutions to the arsenic problem that is currently affecting ~100 million people on the Indian subcontinent. Arsenic concentrations were measured in all drinking waters believed to be safe and in a random sample of "red" (unsafe) tubewell waters. Depending on geography, history of safe water sources and availability of pon

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32

Lin, Yong. "Science and applications of III-V graded anion metamorphic buffers on INP substrates." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1172852334.

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33

Grenouilloux, Thomas. "Etude des mécanismes de diffusion dans les alliages HgCdTe pour la détection infrarouge." Thesis, Strasbourg, 2017. http://www.theses.fr/2017STRAD020.

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Ces travaux de thèse ont développé l’ensemble des problématiques de diffusion liées à la fabrication de la technologie HgCdTe p/n, avec pour objectif l’obtention d’un modèle numérique permettant la simulation complète de la diode. Nous avons étudié le phénomène d’interdiffusion Hg/Cd, indispensable au processus de passivation du photodétecteur. Dans un milieu monocristallin le coefficient d’interdiffusion est calculé par la loi de Darken qui fait intervenir le facteur thermodynamique, dont nous avons déterminé la variation en température. L’exodiffusion de l’indium, le dopant n, et sa diffusio

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34

Cypranowski, Corinne. "Power recovery of radiation-damaged gallium arsenide and indium phosphide solar cells." Thesis, Monterey, California. Naval Postgraduate School, 1989. http://hdl.handle.net/10945/27215.

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35

Wilkinson, Lucinda Clare. "Indium gallium arsenide multiple quantum well devices for optically interconnected smart pixels." Thesis, Heriot-Watt University, 1998. http://hdl.handle.net/10399/640.

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36

Narendar, Harish. "A Simulation Study of Enhancement mode Indium Arsenide Nanowire Field Effect Transistor." University of Cincinnati / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1259080514.

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37

Byrnes, Daniel P. "Scanning tunneling optical resonance microscopy applied to indium arsenide quantum dot structures /." Online version of thesis, 2009. http://hdl.handle.net/1850/11200.

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38

Lidsky, David. "Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/52591.

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Designs for PnP GaAs/InxGa1-xAs/GaAs heterojunction bipolar transistors (HBTs) are proposed and simulated with the aid of commercial software. Band diagrams, Gummel plots and common emitter characteristics are shown for the specific case of x=1, x=0.7, and x linearly graded from 0.75 to 0.7. Of the three designs, it is found that the linearly graded case has the lowest leakage current and the highest current gain. IV curves for all four possible classes of InAs/GaAs heterojunction (nN, nP, pN, pP) are calculated. A pN heterojunction is fabricated and characterized. In spite of the 7% lat

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Bacher, Fred R. "A study of GaAs, InP and InGaAs grown by organometallic vapor phase epitaxy /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,139.

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凌志聰 and Chi-chung Francis Ling. "Positron annihilation spectroscopic studies of GAAS and INP related systems." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31235062.

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Dean, Matthew Craig. "Single and entangled photon sources using self-assembled InAs quantum dots." Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648451.

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SRIVASTAVA, SHIVANI. "SIMULATION STUDY OF InP-BASED UNI-TRAVELING CARRIER PHOTODIODE." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1068737126.

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Myers, Riggs Rhonda Renee. "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport." University of Cincinnati / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1192729325.

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44

Ling, Chi-chung Francis. "Positron annihilation spectroscopic studies of GAAS and INP related systems /." Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B17592513.

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Aurand, Alain. "Photoluminescence d'hétéostructures GaAs/Ga0. 51In0. 49P : étude des échanges arsenic/phosphore." Clermont-Ferrand 2, 1999. http://www.theses.fr/1999CLF22101.

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CE MEMOIRE RAPPORTE UNE ETUDE EXPERIMENTALE ET THEORIQUE DES PROPRIETES OPTIQUES DE PUITS QUANTIQUES GaAs/Ga0. 51In0. 49P ELABORES SOUS JETS CHIMIQUES ET CONCERNE LES ECHANGES ARSENIC/PHOSPHORE SE PRODUISANT DURANT LA CROISSANCE. LES ETATS ELECTRONIQUES DES STRUCTURES ETUDIEES SONT ANALYSES A PARTIR D'EXPERIENCES DE PHOTOLUMINESCENCE EN FONCTION DE LA TEMPERATURE ET SOUS PRESSION HYDROSTATIQUE. TOUT D'ABORD, LES DIFFERENTS MOUVEMENTS D'ATOMES AFFECTANT LA STRUCTURE SONT PRESENTES : SEGREGATION D'INDIUM, ECHANGE ET INCORPORATION RESIDUELLE DES ELEMENTS V. CES PHENOMENES ABOUTISSENT A LA FORMATI

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46

Demerdjiev, Penka. "Opto-electrical properties of indium gallium arsenic phosphide quaternary epilayers and multiple quantum wells lattice matched to indium phosphide." Thesis, University of Ottawa (Canada), 1995. http://hdl.handle.net/10393/9722.

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$In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}$ epilayers lattice matched to InP and $In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}/InP$ Multiple Quantum Wells (MQWs) grown by Chemical-Beam Epitaxy (CBE) are being studied systematically using the Photovoltaic (PV) effect. At first, the Schottky barriers on the interfaces (metal-semiconductor, metal-insulator-semiconductor) are determined as an important factor for the electrical and optical properties of the samples. Samples with identical Schottky contact deposition but with an insulating layer on the front surface, have s

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47

Boehme, Christopher M. "MBE growth of an Electronic-Photonic Integrated Circuit (EPIC) using the indium gallium aluminum arsenide/indium phosphide material system." Ann Arbor, Mich. : ProQuest, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1447229.

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Thesis (M.S. in Electrical Engineering)--S.M.U., 2007.<br>Title from PDF title page (viewed Nov. 19, 2009). Source: Masters Abstracts International, Volume: 46-03, page: 1646. Adviser: Gary Evans. Includes bibliographical references.

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Luo, Yilin, and 羅以琳. "High electric field current transport in semi-insulating GaAs and InP." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2000. http://hub.hku.hk/bib/B31242133.

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Wen, Yuan, and 文苑. "Theoretical and experimental studies of electronic states in InAs/GaAsself-assembled quantum dots." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224003.

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Luo, Yilin. "High electric field current transport in semi-insulating GaAs and InP." Hong Kong : University of Hong Kong, 2000. http://sunzi.lib.hku.hk/hkuto/record.jsp?

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