Relevant bibliographies by topics / ATLAS silvaco

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'ATLAS silvaco'

Author: Grafiati
Published: 4 June 2025
Last updated: 15 July 2025

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Journal articles on the topic "ATLAS silvaco"

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Akansha, Ephraim* Neelesh Agrawal Anil Kumar A.K. Jaiswal. "STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET." Global Journal of Engineering Science and Research Management 4, no. 8 (2017): 20–25. https://doi.org/10.5281/zenodo.841194.

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In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics were examined using Silvaco Atlas.
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Kløw, Frode, Erik S. Marstein, and Sean Erik Foss. "Tunneling Contact Passivation Simulations using Silvaco Atlas." Energy Procedia 77 (August 2015): 99–105. http://dx.doi.org/10.1016/j.egypro.2015.07.015.

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Stęszewski, Jędrzej, Andrzej Jakubowski, and Michael L. Korwin-Pawlowski. "Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys." Journal of Telecommunications and Information Technology, no. 3 (June 25, 2023): 93–95. http://dx.doi.org/10.26636/jtit.2007.3.837.

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A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments
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Taouririt, Taki Eddine, Afak Meftah, Nouredine Sengouga, Marwa Adaika, Slimane Chala, and Amjad Meftah. "Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey." Nanoscale 11, no. 48 (2019): 23459–74. http://dx.doi.org/10.1039/c9nr03395e.

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This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.
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Parajuli, D., Deb Kumar Shah, Devendra KC, Subhash Kumar, Mira Park, and Bishweshwar Pant. "Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach." Electrochem 3, no. 3 (2022): 407–15. http://dx.doi.org/10.3390/electrochem3030028.

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The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 1019 cm−3 and 1 × 1015 cm−3 were optimized for n-InGaN and p-InGaN regions, respectively. The thickness of 300 nm was optimized for both n-InGaN and p-InGaN regions. The highest efficiency of 22.17% with Jsc = 37.68 mA/cm2, Voc = 0.729 V, and FF = 80.61% was achieved at optimized values of doping concentration and thickness of n-InGaN and p-InGaN regions of InGaN solar cells. The simulation study shows the relevance of the Silvaco ATLAS simulation tool, as well as the optimization of doping concentration and thickness of n- and p-InGaN regions for solar cells, which would make the development of high-performance InGaN solar cells low-cost and efficient.
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Islam, Md Rabiul, Md Kamrul Hasan, Md Abdul Mannan, M. Tanseer Ali, and Md Rokib Hasan. "Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor." AIUB Journal of Science and Engineering (AJSE) 18, no. 2 (2019): 73–80. http://dx.doi.org/10.53799/ajse.v18i2.43.

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We have investigated the performance of Gallium Nitride (GaN) based Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Atlas Device Simulation Framework -Silvaco has been used to access Non-Equilibrium Green Function to distinguish the transfer characteristics curve, ON state current (ION), OFF-state current (IOFF), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Electron Current Density, Conduction Band Energy and Electric Field. The concept of Solid state device physics on the effect of gate length studied for the next generation logic applications. GaN-based DG MOSFETs shows better performance than Si-based Single gate MOSFETs. The proposed device has drawn the attention over conventional SG-MOSFET due to fas switching performance. The device turn on and turn off voltage is respectively VGS=1V(On state) and VGS-0V(OFF State). To validate our simulation tool and model results, previous research model has been investigated using Silvaco Atlas and the results obtained are compared to the previous results.
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Иванов, П. А., А. С. Потапов та Т. П. Самсонова. "Моделирование переходных процессов в полупроводниковых приборах на основе 4H-SiC (учет неполной ионизации легирующих примесей в модуле ATLAS программного пакета SILVACO TCAD)". Физика и техника полупроводников 53, № 3 (2019): 407. http://dx.doi.org/10.21883/ftp.2019.03.47295.9014.

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AbstractTransient process in a resistor–capacitor (RC) circuit with a reverse-biased 4 H -SiC p – n diode as the capacitive element is simulated. Simulation is performed with the ATLAS software module from the SILVACO TCAD system for technology computer-aided design (TCAD). An alternative way, to that in ATLAS, to set the parameters of doping impurities partly ionized in 4 H -SiC at room temperature is suggested. (The INCOMPLETE physical model available in the ATLAS module, which describes the incomplete ionization of doping impurities in semiconductors, is unsuitable for simulating the dynamic characteristics of devices.) The simulation results are discussed in relation to previously obtained experimental results.
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A. Z. Djennati, S. Kerai, and M. Khaouani. "HTL material variation of Graphene/ITO/TiO2/MAPbI3/spiro-OMeTAD solar cells under high temperature effect." International Journal of Nanoelectronics and Materials (IJNeaM) 17, no. 3 (2024): 446–51. http://dx.doi.org/10.58915/ijneam.v17i3.1167.

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Perovskite-based solar cells have recently gained attention as a potentially viable option to replace conventional photovoltaic technologies, offering high efficiency and low cost. In this work, we present a numerical simulation of ITO/TiO2/MAPbI3/OMeTAD solar cell under Silvaco TCAD Tools; the devices exhibit a high efficiency of 27.42 %, 0.3 A/W spectral response at 580 nm optical wavelength. The device is studied under different parameter variations such as: HLT material variation (spiro-OMeTAD, Silicon,PEDOT:PSS and carbon fiber), doping effect of the Sprio layer on IV curves and performance under temperature variation (25-300 ͦC). Overall, this study highlights the potential of perovskite materials in the development of photovoltaic technologies and the accuracy of Silvaco-Atlas in predicting their performance and efficiency
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Cazarre, A., N. Nolhier, F. Morancho, P. Austin, and P. Calmon. "Initiation à la simulation bidimensionnelle Environnement SILVACO ( ATHENA - ATLAS)." J3eA 4 (2005): 003. http://dx.doi.org/10.1051/j3ea:200515.

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Munir, Tarriq, Azlan Abdul Aziz, Mat Johar Abdullah, and Mohd Fadzil Ain. "Temperature Dependent DC and RF Performance of n-GaN Schottky Diode: A Numerical Approach." Advanced Materials Research 895 (February 2014): 439–43. http://dx.doi.org/10.4028/www.scientific.net/amr.895.439.

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This paper reports the temperature dependent DC and RF characteristics of n-GaN Schottky diode simulated using Atlas/Blaze developed by Silvaco. It was found that as the temperature increases from 300K to 900K the forward current decreases due to lowering of the Schottky barrier with an increase in series-resistance and ideality factor. These observations indicates that tunneling behavior dominates the current flow rather than thermionic emission. Furthermore, the breakdown voltage decreases in reverse bias and insertion loss for RF behavior increases with respect to temperature due to the increase in capacitance near diode junction.Keywords: Atlas/Blaze, Schottky barrier, series resistance, ideality factor, insertion loss.
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Dissertations / Theses on the topic "ATLAS silvaco"

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Garcia, Baldomero. "Indium gallium nitride multijunction solar cell simulation using silvaco atlas." Thesis, Monterey, Calif. : Naval Postgraduate School, 2007. http://bosun.nps.edu/uhtbin/hyperion-image.exe/07Jun%5FGarcia.pdf.

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Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, June 2007.<br>Thesis Advisor(s): Sherif Michael. "June 2007." Includes bibliographical references (p. 91-94). Also available in print.
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Green, Shawn E. "Interdigitated back-surface-contact solar cell modeling using Silvaco Atlas." Thesis, Monterey, California: Naval Postgraduate School, 2015. http://hdl.handle.net/10945/45861.

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Approved for public release; distribution is unlimited<br>The Silvaco Atlas semiconductor modeling software was used to simulate an interdigitated back-surface-contact solar cell. The cell is modeled after the silicon-based Sunpower Corporation A-300 solar cell, which contains a number of unique features that give it advantages over conventional solar cells. This simulation attempted to match as closely as possible the results measured by the National Renewable Energy Laboratory from the A-300 cell in order to validate the model. This model was then used to investigate the effects of making the A-300 thinner, which would permit its use in military solar blanket applications. A thin and flexible solar cell is ideal for this application due to its lighter weight, making it portable and flexible, which increases its ruggedness. The ability to simulate an interdigitated back-surface-contact cell also allows future work using computer algorithms to improve power output results as well as investigations into using materials other than silicon, which may further improve power output.
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Jrad, Abdelhak. "Elaboration, characterization and design of ZnS thin films for optoelectronic applications." Thesis, Sorbonne Paris Cité, 2017. http://www.theses.fr/2017USPCC074/document.

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Le sulfure de zinc est l'un des premiers semiconducteurs découverts. Il a un grand potentiel d’applications grâces à ses propriétés physicochimiques. Il est intensément utilisé dans des applications optoélectroniques, photocatalytiques et pour la détection de gaz. En particulier, il est utilisé pour des applications photovoltaïques. Dans ce contexte, nous avons commencé par l’étude de l’effet du dopage par des métaux de transition (manganèse, cobalt et cuivre) sur les propriétés structurales, microstructurales, morphologiques, optiques, électriques et magnétiques des couches minces de sulfure de zinc préparées par la technique de dépôt chimique en solution (chemical bath deposition (CBD)) par diffraction aux rayons X, spectroscopie photoélectronique X, spectroscopie Raman, spectroscopie infrarouge, microscopie électronique à balayage, spectrophotométrie UV-Vis-NIR, effet Hall et SQUID. En second lieu nous avons étudié l’effet de la variation de l’épaisseur des couches formant la cellule photovoltaïque à base de Cu(In,Ga)Se2 par la simulation numérique à deux dimensions sous éclairement AM1.5 de puissance 100 mW/cm2 effectué sous Silvaco ATLAS<br>Zinc sulfide is one of the first semiconductors discovered. It has great potential application thanks to its physicochemical properties. It is used extensively in optoelectronic, photocatalytic and gas detection applications. In particular, it is used for photovoltaic applications. In this work, the effect of doping by transition metals (manganese, cobalt and copper) on the structural, microstructural, morphological, optical, electrical and magnetic properties of zinc sulfide thin films prepared by chemical bath deposition (CBD) technique are studied by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, infrared spectroscopy, scanning electron microscopy, UV-VIS-NIR spectrophotometry, Hall effect and SQUID. The modeling and optimization of higher efficiency Cu(In,Ga)Se2 solar cells are also investigated in this thesis for various layers thickness by using Silvaco ATLAS
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Gelinas, Robert. "A novel approach to modeling tunnel junction diodes using Silvaco Atlas software /." Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Dec%5FGelinas.pdf.

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Garfrerick, Adam R. "Modeling Heterogeneous Carbon Nanotube Networks for Photovoltaic Applications Using Silvaco Atlas Software." Thesis, Monterey, California. Naval Postgraduate School, 2012. http://hdl.handle.net/10945/7345.

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Recent developments in carbon nanotube technology have allowed for semi-transparent electrodes to be created which can possibly improve the efficiency of solar cells. A method for simulating the use of semi-transparent carbon nanotube networks as a charge collector for solar cells in Silvaco ATLAS software is presented in this thesis. Semi-transparent carbon nanotube networks allow for a greater area of charge collection on the surface of solar cells as well as a lower resistance path for charge carriers to travel to the top contact grid lines. These properties can decrease the required area of a solar cell covered by metal contacts, allowing a greater amount of light input. The metal contacts which transport charge carriers to the edge of the device can also be made thicker and more spread out, lowering the resistance in the metal gridlines of solar cells. The model for semi-transparent carbon nanotube networks presented in this thesis is incorporated into a solar cell which is simulated in Silvaco ATLAS software. The performance of a cell with and without the carbon nanotube network is compared, taking into account the limitations of the simulation software.
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Schiavo, Daniel. "Modeling Radiation Effects on a Triple Junction Solar Cell using Silvaco ATLAS." Thesis, Monterey, California. Naval Postgraduate School, 2012. http://hdl.handle.net/10945/7412.

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In this research, Silvaco ATLAS, an advanced virtual wafer fabrication tool, was used to model the effects of radiation on a triple junction InGaP/GaAs/Ge solar cell. A Silvaco ATLAS model of a triple junction InGaP/GaAs/Ge cell was created by first creating individual models for solar cells composed of each material. Realistic doping levels were used and thicknesses were varied to produce the design parameters and create reasonably efficient solar cell models for testing. After the individual solar cells were built, defects simulating the damage caused by radiation were introduced into the semiconductor model. After showing that the defects had a noticeable effect on the characteristics of the individual cells, a triple-junction solar cell created by layering the individual cells was then modeled. Work from previous NPS theses provided the background for modeling solar cells and the effects of radiation using Silvaco ATLAS. Data from another thesis provided the number of defects associated with the different fluence levels simulated.
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Gelinas, Robert J. "A novel approach to modeling tunnel junction diodes using Silvaco Atlas software." Thesis, Monterey, California. Naval Postgraduate School, 2005. http://hdl.handle.net/10945/1784.

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This thesis investigates the ability to model a tunnel junction device using the ATLAS device simulator by Silvaco International. The tunnel junction is a critical component of a multijunction solar cell. This thesis will concentrate on simulating the tunnel junction for application as part of a multijunction solar cell. It will try several methods, in ATLAS device simulator, to produce a model of the tunnel junction that can later be used while designing multijunction devices. These methods will consist of the review of past work, attempting to modify past work to be applied in the current design, producing a new tunnel junction simulation from the ground-up, and review of the simulations of similar devices to learn if they can be modified and applied to making a working tunnel junction model.
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Fotis, Konstantinos. "Modeling and simulation of a dual-junction CIGS solar cell using Silvaco ATLAS." Thesis, Monterey, California. Naval Postgraduate School, 2012. http://hdl.handle.net/10945/27831.

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The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell, using a CIGS bottom cell and different thin-film designs as a top cell, was conducted in order to increase the current record efficiency of 20.3% for a single CIGS cell. This was accomplished through modeling and simulation using Silvaco ATLASTM, an advanced virtual wafer-fabrication tool. A Silvaco ATLASTM model of a single CIGS cell was created by utilizing actual solar cell parameters (such as layer thicknesses, gallium ratio, doping levels and materials properties) documented in different papers, and work from previous NPS theses provided the background for modeling with Silvaco ATLASTM. After the individual CIGS solar cells were built, a dual-junction cell was created by adding the layers of another CIGS solar cell whose parameters (layers thicknesses, Ga ratio) were varied to produce an optimum efficiency of 24%. This approach is promising to produce a multi-junction CIGS cell with record efficiency.
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Sullivan, Brian P. "The effect of temperature on the optimization of photovoltaic cells using Silvaco ATLAS modeling." Thesis, Monterey, California. Naval Postgraduate School, 2010. http://hdl.handle.net/10945/5239.

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Approved for public release; distribution is unlimited<br>In this thesis, the author analyzes the effect of temperature on the performance of photovoltaic cells using a virtual wafer fabrication tool called Silvaco ATLAS. Work from a previous Naval Postgraduate School thesis provided the initial InGaP/GaAs/Ge triple-junction solar cell design used in this analysis. As is often done, the previous work on this solar cell involved optimizing it at 300 K, even though operating temperatures are typically higher. Therefore, for this thesis, the author models each subcell of the multijunction solar cell at 275 to 400 K in 25-degree increments while varying their thicknesses and doping levels, as well as varying the molecular composition of InGaP. The author chose to vary these design parameters to observe their effect on performance and suggest a better design for operating at higher temperatures. The percent improvement increases to more than 11.9% as the temperature increases to 400 K when the author increases the mole fraction of InGaP and the doping in the GaAs emitter and the base of each subcell.
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Jogi, Sreeram. "Modelling of GaN Power Switches." University of Toledo / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1431717800.

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Books on the topic "ATLAS silvaco"

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Bayne, Stephen, and Bejoy Pushpakaran. Modeling and Electrothermal Simulation of SiC Power Devices: Using Silvaco© ATLAS. World Scientific Publishing Co Pte Ltd, 2019.

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A Novel Approach to Modeling the Effects of Radiation in Gallium- Arsenide Solar Cells Using Silvaco's ATLAS Software. Storming Media, 2004.

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Book chapters on the topic "ATLAS silvaco"

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Sarkar, Angsuman. "Device Simulation Using Silvaco ATLAS Tool." In Technology Computer Aided Design. CRC Press, 2013. http://dx.doi.org/10.1201/b14860-6.

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"Introduction to Silvaco© ATLAS TCAD Software." In Modeling and Electrothermal Simulation of SiC Power Devices. WORLD SCIENTIFIC, 2019. http://dx.doi.org/10.1142/9789813237834_0003.

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Singh, Ashish Kumar, and Satyabrata Jit. "InAs Raised Buried Oxide SOI-TFET with N-type Si1-xGex Pocket for Low-Power Applications." In Nanoelectronic Devices and Applications. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815238242124010012.

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In this chapter, we studied the device-level performance based on electrostatic parameters of a source pocket engineered raised buried oxide (RBOX) SOI tunnel field-effect transistor (SP-RBOX-SOITFET). Using Si1-xGex pockets between the channel and the source, steep subthreshold swing transistors can be obtained. In the pocket, a narrow n+ region is formed by a tunneling junction between the p+ region of the source. In order to reduce subthreshold swing, the tunneling width must be narrowed, and the lateral electric field must be increased. So, the studied structure can be used to design the dielectric modulated biomolecule biosensors for IOTs applications. Simulation analyses of the proposed work has been conducted using the Silvaco ATLAS TCAD tool.
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Jaafar, Hind, Abdellah Aouaj, Ahmed Bouziane, and Benjamin Iñiguez. "A Compact Model of DMG-GC-DOTTDCD Cylindrical Gate MOSFET." In MOSFET - Developments and Trends [Working Title]. IntechOpen, 2024. http://dx.doi.org/10.5772/intechopen.1004730.

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A comprehensive analysis of the surface potential, threshold voltage, and subthreshold swing (SS) for dual-metal gate graded channel and dual oxide thickness with two different dielectric constants cylindrical gate (DMG-GC-DOTTDCD) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). An analytical model for drain current is developed employing a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is determined using the current density expressions. The DMG-GC-DOTTDCD device is compared with DMG-GC-DOT, revealing that our structure provides superior immunity against short-channel effects (incorporated in the drain current model). The analytically obtained results align with those achieved through the Silvaco Atlas-TCAD software.
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Anusha, Kadiyam, and Arun Dev Dhar Dwivedi. "Comparative Study of DNTT-Based Low-Voltage BGBC, BGTC, TGBC and TGTC Configurations of OTFTs." In Organic Electronics - From Fundamentals to Applications [Working Title]. IntechOpen, 2024. http://dx.doi.org/10.5772/intechopen.1006308.

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In this chapter, we present the numerical simulation and performance analysis of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)-based OTFTs by solving fundamental semiconductor equations using finite element method. This work offers a device simulation-based comparative study of low-voltage dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) based on BGBC, BGTC, TGBC, and TGTC configurations of organic thin film transistors (OTFTs). Technology Computer Aided Design (TCAD) has been performed using ATLAS device simulator from Silvaco Inc. by taking into account the density of defects states (DOS) and field-dependent mobility model. A number of electrical metrics, including mobility, threshold voltage, current on-off ratio, transconductance, and subthreshold slope, have been extracted from experimental data as well as from the data obtained from the TCAD simulation of the device's I-V characteristics. For the bottom gate top contact (BGTC) configuration of DNTT-based OTFT, TCAD simulation results are found to be in good agreement with the experimental results reported by others. Additionally, we have retrieved the device performance parameters by running TCAD simulations for the top gate top contact (TGTC), bottom gate bottom contact (BGBC), and top gate bottom contact (TGBC) configurations of the OTFTs. Electrical performance parameters of all four configurations of the OTFTs have been compared and tabulated.
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Conference papers on the topic "ATLAS silvaco"

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Seabroke, George, Andrew Holland, David Burt, and Mark Robbins. "Silvaco ATLAS model of ESA's Gaia satellite e2v CCD91-72 pixels." In SPIE Astronomical Telescopes + Instrumentation, edited by Andrew D. Holland and David A. Dorn. SPIE, 2010. http://dx.doi.org/10.1117/12.856958.

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Oktiawati, Unan Yusmaniar, Norani Muti Mohamed, and Zainal Arif Burhanudin. "Dye solar cell design parameter optimization using Silvaco ATHENA and ATLAS." In 2016 6th International Conference on Intelligent and Advanced Systems (ICIAS). IEEE, 2016. http://dx.doi.org/10.1109/icias.2016.7824055.

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Haque, Md Mohitul, Charles Dickens Tusha Falia, and Mahmudul Hasan. "Investigating the Performance of Nanocrystalline Silicon HIT Solar Cell by Silvaco ATLAS." In 2019 22nd International Conference on Computer and Information Technology (ICCIT). IEEE, 2019. http://dx.doi.org/10.1109/iccit48885.2019.9038595.

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Graves, David Z., Argenis V. Bilbao, Stephen B. Bayne, Emily A. Schrock, Seth Miller, and James Phillips. "Modeling of a SiC Drift Step Recovery Diode Stack in Silvaco Atlas." In 2023 IEEE Pulsed Power Conference (PPC). IEEE, 2023. http://dx.doi.org/10.1109/ppc47928.2023.10310710.

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Pushpakaran, Bejoy N., Stephen B. Bayne, and Aderinto A. Ogunniyi. "Physics based electro-thermal transient simulation of 4H-SiC JBS diode using Silvaco ATLAS." In 2015 IEEE Pulsed Power Conference (PPC). IEEE, 2015. http://dx.doi.org/10.1109/ppc.2015.7296926.

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Ciezki, J., G. Vineyard, and T. Weatherford. "The investigation of the electro-thermal characteristics of a GTO thyristor at turn off using SILVACO ATLAS." In 2009 IEEE International Integrated Reliability Workshop (IRW). IEEE, 2009. http://dx.doi.org/10.1109/irws.2009.5383007.

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Valencia, D., M. Zuniga, C. Meza-Avendano, et al. "Numerical Study of the Recombination Profiles in CIGSe Thin Film Solar Cells Through Silvaco Atlas Simulator after using Experimental Parameters." In 2021 18th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE). IEEE, 2021. http://dx.doi.org/10.1109/cce53527.2021.9633066.

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Sahu, Abhijeet, Mamta Khosla, Neetu Sood, and Girish Wadhwa. "Dual-Cavity Triple-Metal Gate-Underlap Dielectric-Modulated Charge-Plasma-based TFET for the Biomolecules Recognition." In International Conference on Women Researchers in Electronics and Computing. AIJR Publisher, 2021. http://dx.doi.org/10.21467/proceedings.114.68.

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In this era of technology, biosensors play an essential role in living life. Today’s research and investigation revolved around its higher responsiveness and speed of detection. Normal TFET has many disadvantages like fabrication complexity, random dopant fluctuation, and the lower ON-State current. We are introducing a device that is a Dual-Cavity Triple-Metal gate-underlap DM-CPTFET for label-free detection. This device has a dual cavity for sensing different types of biomolecules simultaneously. We used the tool i.e SILVACO ATLAS TCAD Simulator for the sensing applications. High K material and gate work function engineering help us to improve drain current and better sensitivity. We used this TCAD tool, for analyzing the different parameter variations like energy band variation, surface potential, transfer characteristic, and output characteristic using different biomolecules Gelatin(k=12), Keratin(K=8), Biotin(K=2.63), etc.
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Saha, Upoma, Fahmi Imteaz, Oishi Prova Saleque, Md Mehedi Hassan Shohag, and Bishwajit Debnath. "Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation." In 2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT). IEEE, 2015. http://dx.doi.org/10.1109/iceeict.2015.7307345.

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Tsutagawa, Michael H., and Sherif Michael. "Triple junction InGaP/GaAS/Ge solar cell optimization: The design parameters for a 36.2% efficient space cell using Silvaco ATLAS modeling & simulation." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411544.

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