Journal articles on the topic 'ATLAS silvaco'
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Akansha, Ephraim* Neelesh Agrawal Anil Kumar A.K. Jaiswal. "STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET." Global Journal of Engineering Science and Research Management 4, no. 8 (2017): 20–25. https://doi.org/10.5281/zenodo.841194.
Full textKløw, Frode, Erik S. Marstein, and Sean Erik Foss. "Tunneling Contact Passivation Simulations using Silvaco Atlas." Energy Procedia 77 (August 2015): 99–105. http://dx.doi.org/10.1016/j.egypro.2015.07.015.
Full textStęszewski, Jędrzej, Andrzej Jakubowski, and Michael L. Korwin-Pawlowski. "Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys." Journal of Telecommunications and Information Technology, no. 3 (June 25, 2023): 93–95. http://dx.doi.org/10.26636/jtit.2007.3.837.
Full textTaouririt, Taki Eddine, Afak Meftah, Nouredine Sengouga, Marwa Adaika, Slimane Chala, and Amjad Meftah. "Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey." Nanoscale 11, no. 48 (2019): 23459–74. http://dx.doi.org/10.1039/c9nr03395e.
Full textParajuli, D., Deb Kumar Shah, Devendra KC, Subhash Kumar, Mira Park, and Bishweshwar Pant. "Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach." Electrochem 3, no. 3 (2022): 407–15. http://dx.doi.org/10.3390/electrochem3030028.
Full textIslam, Md Rabiul, Md Kamrul Hasan, Md Abdul Mannan, M. Tanseer Ali, and Md Rokib Hasan. "Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor." AIUB Journal of Science and Engineering (AJSE) 18, no. 2 (2019): 73–80. http://dx.doi.org/10.53799/ajse.v18i2.43.
Full textИванов, П. А., А. С. Потапов та Т. П. Самсонова. "Моделирование переходных процессов в полупроводниковых приборах на основе 4H-SiC (учет неполной ионизации легирующих примесей в модуле ATLAS программного пакета SILVACO TCAD)". Физика и техника полупроводников 53, № 3 (2019): 407. http://dx.doi.org/10.21883/ftp.2019.03.47295.9014.
Full textA. Z. Djennati, S. Kerai, and M. Khaouani. "HTL material variation of Graphene/ITO/TiO2/MAPbI3/spiro-OMeTAD solar cells under high temperature effect." International Journal of Nanoelectronics and Materials (IJNeaM) 17, no. 3 (2024): 446–51. http://dx.doi.org/10.58915/ijneam.v17i3.1167.
Full textCazarre, A., N. Nolhier, F. Morancho, P. Austin, and P. Calmon. "Initiation à la simulation bidimensionnelle Environnement SILVACO ( ATHENA - ATLAS)." J3eA 4 (2005): 003. http://dx.doi.org/10.1051/j3ea:200515.
Full textMunir, Tarriq, Azlan Abdul Aziz, Mat Johar Abdullah, and Mohd Fadzil Ain. "Temperature Dependent DC and RF Performance of n-GaN Schottky Diode: A Numerical Approach." Advanced Materials Research 895 (February 2014): 439–43. http://dx.doi.org/10.4028/www.scientific.net/amr.895.439.
Full textRolland, Gwen, Christophe Rodriguez, Guillaume Gommé, et al. "High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN." Energies 14, no. 19 (2021): 6098. http://dx.doi.org/10.3390/en14196098.
Full textBoukortt, N., S. Patanè, and B. Hadri. "Development of High-Efficiency PERC Solar Cells Using Atlas Silvaco." Silicon 11, no. 1 (2018): 145–52. http://dx.doi.org/10.1007/s12633-018-9838-8.
Full textDWIVEDI, A. D. D., and POOJA KUMARI. "TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs." Surface Review and Letters 27, no. 05 (2019): 1950145. http://dx.doi.org/10.1142/s0218625x19501452.
Full textKang, J., X. He, D. Vasileska, and D. K. Schroder. "Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations." VLSI Design 13, no. 1-4 (2001): 251–56. http://dx.doi.org/10.1155/2001/45747.
Full textDubey, Sarvesh, and Rahul Mishra. "Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control." SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology 9, no. 01 (2017): 67–72. http://dx.doi.org/10.18090/samriddhi.v9i01.8340.
Full textChowdhury, Md. Iqbal Bahar. "Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD." Journal of Electronic Design Engineering 3, no. 3 (2017): 1–9. https://doi.org/10.5281/zenodo.15319750.
Full textSharma, Sanjeev Kumar, Jeetendra Singh, Balwinder Raj, and Mamta Khosla. "Analysis of Barrier Layer Thickness on Performance of In1–xGaxAs Based Gate Stack Cylindrical Gate Nanowire MOSFET." Journal of Nanoelectronics and Optoelectronics 13, no. 10 (2018): 1473–77. http://dx.doi.org/10.1166/jno.2018.2374.
Full textMehrabian, Masood, and Sina Dalir. "11.73% efficient perovskite heterojunction solar cell simulated by SILVACO ATLAS software." Optik 139 (June 2017): 44–47. http://dx.doi.org/10.1016/j.ijleo.2017.03.077.
Full textSurdi, Harshad, Trevor Thornton, Robert J. Nemanich, and Stephen M. Goodnick. "Space charge limited corrections to the power figure of merit for diamond." Applied Physics Letters 120, no. 22 (2022): 223503. http://dx.doi.org/10.1063/5.0087059.
Full textPICOS, R., E. GARCIA, M. ESTRADA, A. CERDEIRA, and B. IÑIGUEZ. "EFFECT OF PROCESS VARIATIONS ON AN OTFT COMPACT MODEL PARAMETERS." International Journal of High Speed Electronics and Systems 20, no. 04 (2011): 815–28. http://dx.doi.org/10.1142/s0129156411007070.
Full textTobbeche, S., and M. N. Kateb. "Two-Dimensional Modelling and Simulation of Crystalline Silicon n+pp+ Solar Cell." Applied Mechanics and Materials 260-261 (December 2012): 154–62. http://dx.doi.org/10.4028/www.scientific.net/amm.260-261.154.
Full textHossain, Md Mosabbir, Kh Shakil Ahmed, Kazi Mysoon Rubyat, et al. "Simulation-Driven Fabrication and Performance Evaluation of n-MOSFET using Silvaco Athena and Atlas: From Process to Parameters." Journal of Microprocessor and Microcontroller Research 1, no. 3 (2014): 21–43. http://dx.doi.org/10.46610/jommr.2024.v01i03.003.
Full textVimala, Palanichamy, and N. R. Nithin Kumar. "Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer." Journal of Nano Research 56 (February 2019): 119–30. http://dx.doi.org/10.4028/www.scientific.net/jnanor.56.119.
Full textJaafar, Hind, Abdellah Aouaj, Ahmed Bouziane, and Benjamin Iñiguez. "An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET." Nanoscience &Nanotechnology-Asia 9, no. 2 (2019): 291–97. http://dx.doi.org/10.2174/2210681208666180813122145.
Full textSadoun, Ali. "Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)." International Journal of Energetica 5, no. 1 (2020): 30. http://dx.doi.org/10.47238/ijeca.v5i1.120.
Full textAbd Rahim, Alhan Farhanah, N. M. Sah, I. H. Hamzah, Siti Noraini Sulaiman, and Musa Mohamed Zahidi. "Study on the Effect of Porous Silicon Sizes for Potential Visible Photodetector." Applied Mechanics and Materials 815 (November 2015): 121–30. http://dx.doi.org/10.4028/www.scientific.net/amm.815.121.
Full textMohd Said, Muzalifah, Zul Atfyi Fauzan, and Nur Fatihah Azmi. "NMOS Low Boron Activation in Pre-Amorphise Silicon." Advanced Materials Research 875-877 (February 2014): 734–38. http://dx.doi.org/10.4028/www.scientific.net/amr.875-877.734.
Full textSmaani, Billel, Mourad Bella, and Saϊda Latreche. "Compact Modeling of Lightly Doped Nanoscale DG MOSFET Transistor." Applied Mechanics and Materials 492 (January 2014): 306–10. http://dx.doi.org/10.4028/www.scientific.net/amm.492.306.
Full textBenykrelef, Souad, Sedik Mansouri, Hicham Helal, Abdelaziz Rabehi, Abdelaziz Joti, and Zineb Benamara. "Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts." Journal of Engineering and Exact Sciences 9, no. 4 (2023): 15855–01. http://dx.doi.org/10.18540/jcecvl9iss4pp15855-01e.
Full textXu, Hui Fang, Guo Wei Cui, Yong Li, Wen Yang Sun, Kui Xia, and Chao He. "Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET." Japanese Journal of Applied Physics 63, no. 3 (2024): 034001. http://dx.doi.org/10.35848/1347-4065/ad27a2.
Full textA, N. Moulai Khatir, Guen-Bouazza A, and Bouazza B. "3D Simulation of Fin Geometry Influence on Corner Effect in Multifin Dual and Tri-Gate SOI-Finfets." International Journal of Nano Studies & Technology 2, no. 4 (2013): 29–32. https://doi.org/10.19070/2167-8685-130006.
Full textSanjay, Sharma, Yadav R.P., and Janyani Vijay. "Substrate Current Evaluation for Lightly and Heavily Doped MOSFETs at 45 nm process Using Physical Models." Bulletin of Electrical Engineering and Informatics 5, no. 1 (2016): 120–25. https://doi.org/10.11591/eei.v5i1.556.
Full textEl-Yazami, Chaimae, Seddik Bri, and Adiba El Fadl. "Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™." E3S Web of Conferences 601 (2025): 00047. https://doi.org/10.1051/e3sconf/202560100047.
Full textKarker, Olfa, Konstantinos Zekentes, Aude Bouchard, et al. "Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures." Materials Science Forum 1062 (May 31, 2022): 608–12. http://dx.doi.org/10.4028/p-23d7ab.
Full textTakata, Masashi, Kenichiro Takagi, Takashi Nagase, Takashi Kobayashi, and Hiroyoshi Naito. "Effects of Bimolecular Recombination on Impedance Spectra in Organic Semiconductors: Analytical Approach." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3322–26. http://dx.doi.org/10.1166/jnn.2016.12289.
Full textHind, Jaafar, Aouaj Abdellah, Bouziane Ahmed, and Iñiguez Benjamin. "A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET." International Journal of Reconfigurable and Embedded Systems 9, no. 1 (2020): 34–41. https://doi.org/10.11591/ijres.v9.i1.pp34-41.
Full textNadimi, M., and A. Sadr. "Computer Modeling of MWIR Homojunction Photodetector Based on Indium Antimonide." Advanced Materials Research 383-390 (November 2011): 6806–10. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.6806.
Full textChandra, Varun, Nidhi Sinha, and Garima Mathur. "Modeling, Numerical Simulation and Performance Optimization of P3HT:PC70BM Based Bulk Hetero Junction Organic Solar Cells." Journal of Nanoelectronics and Optoelectronics 17, no. 4 (2022): 579–87. http://dx.doi.org/10.1166/jno.2022.3242.
Full textZhang, Junqin, Aofei Liu, Hailong Xing, and Yintang Yang. "Study on surface leakage current at sidewall in InP-based avalanche photodiodes with mesa structure." AIP Advances 12, no. 3 (2022): 035336. http://dx.doi.org/10.1063/5.0080656.
Full textChawla, Rashmi, Poonam Singhal, and Amit Kumar Garg. "Design and Analysis of Multi Junction Solar Photovoltaic Cell with Graphene as an Intermediate Layer." Journal of Nanoscience and Nanotechnology 20, no. 6 (2020): 3693–702. http://dx.doi.org/10.1166/jnn.2020.17512.
Full textLiu, Yanli, Dunjun Chen, Kexiu Dong, et al. "Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure." Advances in Condensed Matter Physics 2018 (2018): 1–4. http://dx.doi.org/10.1155/2018/1592689.
Full textMao, Hong-kai, Ying Wang, Xue Wu, and Fang-wen Su. "Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss." Micromachines 10, no. 12 (2019): 815. http://dx.doi.org/10.3390/mi10120815.
Full textGangwani, L., and S. Hajela. "Analog Performance Analysis of a Novel 5nm Stacked Oxide Top Bottom Gated Junctionless FinFET." IOP Conference Series: Materials Science and Engineering 1258, no. 1 (2022): 012046. http://dx.doi.org/10.1088/1757-899x/1258/1/012046.
Full textJoseph Mebelson, T., and K. Elampari. "A study of electrical and optical characteristics of CZTSe solar cell using Silvaco Atlas." Materials Today: Proceedings 46 (2021): 2540–43. http://dx.doi.org/10.1016/j.matpr.2021.01.758.
Full textMehrabian, Masood, Sina Dalir, and Hossein Shokrvash. "Numerical simulation of CdS quantum dot sensitized solar cell using the Silvaco-Atlas software." Optik 127, no. 20 (2016): 10096–101. http://dx.doi.org/10.1016/j.ijleo.2016.08.016.
Full textIype, Preethi Elizabeth, V. Suresh Babu, and Geenu Paul. "Thermal and Electrical Performance of AlGaAs/GaAs based HEMT device on SiC substrate." Journal of Physics: Conference Series 2070, no. 1 (2021): 012057. http://dx.doi.org/10.1088/1742-6596/2070/1/012057.
Full textHazdra, Pavel, Stanislav Popelka, and Adolf Schöner. "Local Lifetime Control in 4H-SiC by Proton Irradiation." Materials Science Forum 924 (June 2018): 436–39. http://dx.doi.org/10.4028/www.scientific.net/msf.924.436.
Full textKarker, Olfa, Konstantinos Zekentes, Nikolaos Makris, Valerie Stambouli, and Edwige Bano. "Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications." Key Engineering Materials 946 (May 25, 2023): 111–18. http://dx.doi.org/10.4028/p-03m3ss.
Full textJain, S. K., A. M. Joshi, and C. Kirpalani. "Performance analysis of OTFT with varying semiconductor film thickness for future flexible electronics." Journal of Optoelectronic and Biomedical Materials 16, no. 1 (2024): 55–62. http://dx.doi.org/10.15251/jobm.2024.161.55.
Full textVerma, Akshay, and Nitesh Kashyap. "Thickness Dependency Analysis of IGZO-Based Thin Film Transistor." International Journal of Microsystems and IoT 2, no. 10 (2024): 1269–75. https://doi.org/10.5281/zenodo.14168632.
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