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Journal articles on the topic 'Atomic Al-doping'

Author: Grafiati

Published: 2 June 2025

Last updated: 19 July 2025

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1

Afifah, Faras, Arif Tjahjono, Aga Ridhova, Pramitha Yuniar Diah Maulida, Alfian Noviyanto, and Didik Aryanto. "Influence of Al and Cu Doping on the Structure, Morphology, and Optical Properties of ZnO Thin Film." Indonesian Journal of Chemistry 23, no. 1 (2023): 44. http://dx.doi.org/10.22146/ijc.73234.

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In this study, ZnO thin films doped with Al (AZO) and Cu (CZO) were fabricated on a glass substrate via sol-gel spin coating. The influence of 1 atomic % Al and Cu doping on the structure, morphology, as well as optical properties of ZnO thin film was then analyzed with X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-Vis spectroscopy. XRD analysis revealed that all samples possessed hexagonal wurtzite crystal structures with 3 to 4 preferred orientations. Al and Cu doping caused a decrease in crystal size, while the lattice strain (e) and dislocation density (ρ) were increased.

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2

Yang, Junru, Yanping Yue, Yan Wang, and Yuekan Zhang. "Interface Bonding Properties of CrAlSiN-Coated Cemented Carbides Doped with CeO2 and Y2O3 Rare Earth Oxides." Molecules 28, no. 8 (2023): 3584. http://dx.doi.org/10.3390/molecules28083584.

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This study performed first-principle-based calculations of the interface adhesion work in interface models of three terminal systems: CrAlSiNSi/WC-Co, CrAlSiNN/WC-Co, and CrAlSiNAl/WC-Co. The results proved that the CrAlSiNSi/WC-Co and CrAlSiNAl/WC-Co interface models had the highest and lowest interface adhesion work values (4.312 and 2.536 J·m−2), respectively. Thus, the latter model had the weakest interface bonding property. On this basis, rare earth oxides CeO2 and Y2O3 were doped into the Al terminal model (CrAlSiNAl/WC-Co). Then, doping models of CeO2 and Y2O3 doped on the WC/WC, WC/Co,

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3

Zhu, Hongmei, Zhengjie Zhang, and Xuchuan Jiang. "Effect of Al, Ti and Cr Doping on Vanadium Dioxide (VO2) Analyzed by Density Function Theory (DFT) Method." Journal of Nanoscience and Nanotechnology 20, no. 3 (2020): 1651–59. http://dx.doi.org/10.1166/jnn.2020.17140.

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Density function theory (DFT) method was developed and applied for fundamentally understanding the doping effect of various metals (Al, Ti and Cr) on vanadium dioxide (VO2). The substitution doping of Al, Ti and Cr in VO2 could lead to significant changes in electronic structure, band gap and optical property. Different from physical experiments, the DFT method could be utilized for fundamental understandings at an atomic scale. It was found via DFT calculations that: (i) Al doping caused a slightly distorted octahedron in monoclinic VO2(M), and narrowed the band gap of VO2(M) due to the upwar

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4

Lu, Ke, Haiping Xu, Haiying He, et al. "Modulating reactivity and stability of metallic lithium via atomic doping." Journal of Materials Chemistry A 8, no. 20 (2020): 10363–69. http://dx.doi.org/10.1039/d0ta02176h.

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5

Xie, Ming, Tao Hu, Liu Yang, and Yun Zhou. "Synthesis of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and conformal Al2O3 coating by atomic layer deposition." RSC Advances 6, no. 68 (2016): 63250–55. http://dx.doi.org/10.1039/c6ra10531a.

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The electrochemical properties of high-voltage (4.7 V) LiCoO<sub>2</sub> cathode materials with Al doping and a conformal Al<sub>2</sub>O<sub>3</sub> coating by atomic layer deposition were studied in this paper.

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6

Krishnan, Bharat, Siva Prasad Kotamraju, Galyna Melnychuk, Neil Merrett, and Yaroslav Koshka. "Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC." Materials Science Forum 615-617 (March 2009): 581–84. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.581.

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Low-temperature halo-carbon homoepitaxial growth is suitable for selective epitaxial growth of 4H-SiC using SiO2 mask. A possibility of achieving high values of doping in combination with the selective growth makes it an alternative to ion implantation for selective doping in SiC. In this work, TMA doping in situ during a blanket low-temperature epitaxial growth was utilized to produce heavily Al doped SiC layers for Ohmic contact formation to p-type SiC. Nearly featureless epilayer morphology with Al atomic concentration exceeding 3x1020 cm-3 was obtained after growth at 13000C with the growt

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7

Zhao, Kai, Jingye Xie, Yudi Zhao, et al. "Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process." Nanomaterials 12, no. 1 (2022): 172. http://dx.doi.org/10.3390/nano12010172.

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Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron conce

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8

Al-Mosawi, Buraq T. Sh, Mohammed K. Al-Hashimi, and Ameer F. Abdulameer. "Aluminum-Doped Titanium Dioxide Thin Films: A Study of Different Concentrations on Poly(3-hexylthiophene): PhenylC61-Butyric Acid Metheyester-Based Organic Solar Cells." Journal of Computational and Theoretical Nanoscience 17, no. 11 (2020): 4849–54. http://dx.doi.org/10.1166/jctn.2020.9409.

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Sol–gel preparation method usually used to prepare the metal oxides. So, it is a rewarding process to prepare the electron selective film made of aluminum-doped titanium dioxide (Al-doped TiO2). The latter was used to fabricate the inverted organic solar cells P2HT:PCBM. The doping content with Al impact on the optical and morphological characteristics of each film were examined. These characteristics were analyzed depending on the magnified images of the prepared samples by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) in addition to the Uv-vis spe

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9

Czelej, Kamil, Marcin Roland Zemła, Piotr Śpiewak, Tomasz Wejrzanowski, and Krzysztof Jan Kurzydłowski. "Atomic-scale computational design of hydrophobic RE surface-doped Al2O3 and TiO2." Physical Chemistry Chemical Physics 19, no. 31 (2017): 21119–26. http://dx.doi.org/10.1039/c7cp03109b.

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10

Aounallah, Hadia, Mourad Zaabat, Abdelouahab Noua, and Tarek Diab Ounis. "Structural, Morphological and Optical Properties of (Mn, Al) Co-Doped ZnO Thin Films Prepared by Sol-Gel Dip Coating Method." Advanced Engineering Forum 44 (January 17, 2022): 17–28. http://dx.doi.org/10.4028/www.scientific.net/aef.44.17.

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In this study, Aluminum (Al) and Manganese (Mn) co-doped ZnO thin films were successfully synthesized into glass substrates by the sol-gel dip-coating method with different Al concentrations (1%, 3%, and 5%). The structural, morphological, and optical properties of the obtained thin ﬁlms were characterized by X-ray diffraction (XRD), Atomic force microscopy (AFM), and UV–VIS spectroscopy. XRD pattern revealed that the films have a polycrystalline hexagonal structure with a preferred orientation along (101) for undoped ZnO thin films, further the co-doped ZnO thin films show a shift in the pref

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11

Park, Tae Joo, Jeong Hwan Kim, Jae Hyuck Jang, et al. "Reduction of Electrical Defects in Atomic Layer Deposited HfO2Films by Al Doping." Chemistry of Materials 22, no. 14 (2010): 4175–84. http://dx.doi.org/10.1021/cm100620x.

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12

Amon, Alfred, Alexander A. Baker, Jibril Shittu, et al. "Influence of atomic ordering and cerium doping on magnetostrictive Fe-Al alloys." Journal of Magnetism and Magnetic Materials 586 (November 2023): 171214. http://dx.doi.org/10.1016/j.jmmm.2023.171214.

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13

Song, Jia, Hai Chuan Mu, Lai Xing Jiang, Gui Lin Yin, Zhen Yu, and Dan Nong He. "The Electrical and Optical Properties of Al-Doped ZnO Thin Films Prepared by Atomic Layer Deposition." Advanced Materials Research 306-307 (August 2011): 1402–5. http://dx.doi.org/10.4028/www.scientific.net/amr.306-307.1402.

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Al-doped ZnO (AZO) thin films (~100nm) with low electrical resistivity and high transparency have been prepared by atomic layer deposition on glass and Si(111) substrates at 200 °C with different doping sequence. The films were systematically analyzed using X-ray diffraction, scanning electron microscope (SEM), UV-vis spectroscopy and Hall measurement. XRD patterns showed that all the films were well crystallized with hexagonal wurtzite structure with preferred orientation along (100) plane. The resisitivity of films deposited with doping sequence of DEZ/TMA/H2O was lower than that with other

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14

Sarma, J. V. N., A. Rahman, R. Jayaganthan, Rajib Chowdhury, and D. Haranath. "Al-doped ZnO Nanostructured Thin Films: Density Functional Theory and Experiment." International Journal of Nanoscience 14, no. 04 (2015): 1550015. http://dx.doi.org/10.1142/s0219581x15500155.

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Nanostructured Al -doped ZnO (AZO) films are deposited on glass substrates by electroless deposition technique in the present work. AZO films with Al concentration from 1 at.% to 5 at.% are investigated for their structural and morphological properties by X-ray diffraction (XRD), and atomic force microscopy (AFM). An excellent homogeneity is achieved with average crystallite sizes of below 32 nm and a nearly constant root mean square (RMS) surface roughness between 1 nm and 3 nm, for various Al doping concentrations. These smooth and uniform films are characterized for their optical and photol

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15

Rositawati, Dwi Nugraheni, Moh Adhib Ulil Absor, Kuwat Triyana, and Iman Santoso. "Charge transport properties of interstitially doped graphene: a first-principles study." Advances in Natural Sciences: Nanoscience and Nanotechnology 14, no. 3 (2023): 035010. http://dx.doi.org/10.1088/2043-6262/acebd9.

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Abstract The role of interstitial atomic doping on transport properties of graphene was systematically studied using first-principles density functional theory (DFT). The study revealed that interstitial Au doping results in a p-type transfer of holes to graphene as the dopant concentration increases to 25%, with the Dirac point shifting to the Fermi level and localised states of atomic dopants appearing at the Fermi level and at energy of −1 eV. Ca, Ag and Al interstitial doping induces an n-type transfer of electrons to graphene with the Dirac point moving away from the Fermi level and local

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16

Su, Huan, Min Zhu, Longxian Li, Huang Huang, and Yang Yang. "First Principles Study on the Adsorption of Hydrogen Atoms on the Surface of Plutonium-Aluminum Systems." Crystals 12, no. 11 (2022): 1592. http://dx.doi.org/10.3390/cryst12111592.

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Three doping models with different aluminum atomic contents on the δ-Pu surface are established. The surface energy of the doping model and the electronic structure at the Fermi level is calculated. After finding out the stable structure, the adsorption behavior of the H atoms at three different positions is simulated. It is concluded that the surface energy of the doping model obtained by substituting two Al for plutonium (100) is the lowest (0.041 eV), and the structure is the most stable. In the H adsorption, the heart site has the largest adsorption energy (4.659 eV), which is the most sta

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17

Liu, Zengcai, Honghe Zhen, Yoongu Kim, and Chengdu Liang. "Synthesis of LiNiO2 cathode materials with homogeneous Al doping at the atomic level." Journal of Power Sources 196, no. 23 (2011): 10201–6. http://dx.doi.org/10.1016/j.jpowsour.2011.08.059.

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18

Zhao, Shunzheng, Honghong Yi, Xiaolong Tang, et al. "The regulatory effect of Al atomic-scale doping in NiAlO for COS removal." Catalysis Today 355 (September 2020): 415–21. http://dx.doi.org/10.1016/j.cattod.2019.07.035.

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19

Yu, Xingmiao, Jianfei Xiang, Qitao Shi, et al. "Tailoring the Li+ Intercalation Energy of Carbon Nanocage Anodes Via Atomic Al-Doping for High-Performance Lithium-Ion Batteries." Small 20, no. 50 (2024): 2406309. https://doi.org/10.1002/smll.202406309.

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Data  The final version of the journal article entitled Tailoring the Li+ Intercalation Energy of Carbon Nanocage Anodes Via Atomic Al-Doping for High-Performance Lithium-Ion Batteries. Original PNG data from original research within the project EBEAM. Precisely there are six final, complex Figures below and the final version of the article: <strong>Figure_1</strong>_DFT_simulations._a)_Li_intercalation_configurations_on_a-i)_pristine_graphene,_a-ii)_N-doped_graphene,_a-iii)_B–N-doped_graphene,_and_a-iv)_Al–B–N-doped_graphene <strong>Figure_2</strong>_The_morphology_and_

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20

Wang, Guangde, Xinyu Zhang, Wenlong Jiang, and Lizhong Wang. "A Study on the Structure and the Photoelectrical Properties of the Al-Doped ZnO Thin Films by Atomic Layer Deposition in Low Temperatures." Journal of Nanoscience and Nanotechnology 18, no. 12 (2018): 8333–36. http://dx.doi.org/10.1166/jnn.2018.16378.

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The AZO transparent conductive films are prepared by the atomic layer deposition (ALD) at a low temperature of 150 °C. The different Al–Zn doping ratios were designed during the deposition. The phase structure of the films was characterized by XRD, the electrical properties of thin films were analyzed by the Holzer test, and the optical properties of thin films were analyzed by the UV-3600 (UV-VIS-NIR) spectrophotometer. The results showed that all the films preferred the orientation of the C axis during the growth process, the AZO films have a very low resistivity of 6.955×10−4 Ω·cm with the

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21

Doyan, Aris, Susilawati, Muhammad Taufik, Syamsul Hakim, and Lalu Muliyadi. "The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device." Solid State Phenomena 317 (May 2021): 477–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.317.477.

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Tin oxide (SnO2) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO2: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO2 with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 w

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22

Cho, Ju-Young, and So-Yeon Lee. "Effects of Doping on Elastic Strain in Crystalline Ge-Sb-Te." Materials 18, no. 1 (2024): 132. https://doi.org/10.3390/ma18010132.

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Phase-change random access memory (PcRAM) faces significant challenges due to the inherent instability of amorphous Ge2Sb2Te5 (GST). While doping has emerged as an effective method for amorphous stabilization, understanding the precise mechanisms of structural modification and their impact on material stability remains a critical challenge. This study provides a comprehensive investigation of elastic strain and stress in crystalline lattices induced by various dopants (C, N, and Al) through systematic measurements of film thickness changes during crystallization. Through detailed analysis of c

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23

Атаева, С. У., С. И. Мехтиева, А. И. Исаев, С. Н. Гарибова та А. С. Гусейнова. "Влияние примеси самария на локальную структуру халькогенидного стеклообразного полупроводника Se-=SUB=-95-=/SUB=-Te-=SUB=-5-=/SUB=- и механизм прохождения тока через структуры Al-Se-=SUB=-95-=/SUB=-Te-=SUB=-5-=/SUB=-<Sm>-Te". Физика и техника полупроводников 53, № 12 (2019): 1655. http://dx.doi.org/10.21883/ftp.2019.12.48622.9060.

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Effect of samarium doping on the local structure and morphological features of films surface of the Se95Te5 chalcogenide glassy semiconductor system have been investigated by X-ray analysis and atomic force microscopy methods, and the influence of doping on the current passing mechanism through the Al-Se95Te5 <Sm> -Te structures have been also considered by measuring the current-voltage characteristics in a stationary mode. The results obtained are interpreted on the basis of the theory of Lampert injection currents, the Elliott void-cluster model and the Mott and Street charged defect m

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24

Ashour, A., E. E. Assem, and E. R. Shaaban. "Investigation of dilute aluminum doped zinc oxide thin films: structural and morphological properties for varies applicationss." Journal of Ovonic Research 18, no. 5 (2022): 699–711. http://dx.doi.org/10.15251/jor.2022.185.699.

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To form a better view of the influences of Al in ZnO, the crystalline structure parameters and morphological (via SEM) of Zn1-xAlxO (x=0.0, 0.02, 0.04, 0.06, 0.08 and 0.10) thin films organized onto glass substrates using by spin coating technique. The effects of Al doping on the structural ZnO nano crystalline films are investigated using (XRD), (EDAX) and (SEM). Rietveld refinement was used to examine the XRD patterns of Zn1- xAlxO thin films. This was done using Fullprof software. The XRD results showed that Al ions successfully replaced the Zn2+ lattice sites without any major change in th

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25

Tseng, Yi-Wei, Fei-Yi Hung, Truan-Sheng Lui, Yen-Ting Chen, Ren-Syuan Xiao, and Kuan-Jen Chen. "Electrical Crystallization Mechanism and Interface Characteristics of Nanowire ZnO/Al Structures Fabricated by the Solution Method." Journal of Nanomaterials 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/208362.

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Both solution nanowire ZnO and sputtered Al thin film on SiO2as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced

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26

Rahman, Md Mamunur, Jun-Gyu Kim, Dae-Hyun Kim, and Tae-Woo Kim. "Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition." Micromachines 10, no. 6 (2019): 361. http://dx.doi.org/10.3390/mi10060361.

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This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO2 dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO2 film can stabilize the tetragonal phase of the HfO2, which helps to achieve a higher dielectric constant (k) and lower leakage current density, as well as a higher breakdown voltage than HfO2 film on its own. Moreover, assimilation of Al2O3 into HfO2 can reduce the hysteresis width and frequency dispersion. These are indications of border trap reduction, which was also verified by the border

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27

Wang, Zhuoran, Nicolas Brodusch, Raynald Gauvin, and George P. Demopoulos. "Nanoengineering of the Cu2ZnSnS4–TiO2 interface via atomic layer deposition of Al2O3 for high sensitivity photodetectors and solid state solar cells." Journal of Materials Chemistry A 6, no. 24 (2018): 11507–20. http://dx.doi.org/10.1039/c8ta02966k.

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Al<sub>2</sub>O<sub>3</sub> nanoislands on the Cu<sub>2</sub>ZnSnS<sub>4</sub>–TiO<sub>2</sub> interface prevented Sn doping and optimized the band alignment for high performance photodetectors and solar cells.

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28

Shim, Jae Hyun, and Nam Hee Cho. "Formation of Nanocrystallites in the nc-Si Films by Co-Sputtering Aluminium and Silicon." Solid State Phenomena 124-126 (June 2007): 495–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.495.

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The nanostructural and optical features of Al-doped Si thin films, which were prepared by co-sputtering Al-chips and a Si main target, were investigated in terms of Al-doping and post-deposition heat-treatment conditions; the heat treatment was carried out at temperatures of 400 ~ 1100 °C. The structural and chemical features are related with the photoluminescence (PL) phenomena of the films. The PL intensity as well as the concentration of Si nanocrystallites were increased by doping particular amount of Al in the films.

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29

Weng, Ming Hung, Fabrizio Roccaforte, Filippo Giannazzo, et al. "Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC." Solid State Phenomena 156-158 (October 2009): 493–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.493.

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This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants

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30

Steeds, John W. "The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation." Materials Science Forum 645-648 (April 2010): 407–10. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.407.

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Low voltage electron irradiations with electron energies down to the C-displacement threshold have been performed and the irradiated samples studied subsequently by low temperature photoluminescence microscopy. The results were found to depend on the electron energy, the n(N)- or p(Al)-doping and the C- or Si-face irradiated. The implications of these results for the current understanding of the atomic origins of these lines are discussed.

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31

Hsu, Chia-Hsun, Xin-Peng Geng, Pao-Hsun Huang, et al. "High doping efficiency Al-doped ZnO films prepared by co-injection spatial atomic layer deposition." Journal of Alloys and Compounds 884 (December 2021): 161025. http://dx.doi.org/10.1016/j.jallcom.2021.161025.

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32

Mošková, A., M. Moško, M. Precner, et al. "Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition." Journal of Applied Physics 130, no. 3 (2021): 035106. http://dx.doi.org/10.1063/5.0053757.

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Peng, Ching-Shiang, Wen-Yuan Chang, Yi-Hsuan Lee, Ming-Ho Lin, Frederick Chen, and Ming-Jinn Tsai. "Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition." Electrochemical and Solid-State Letters 15, no. 4 (2012): H88. http://dx.doi.org/10.1149/2.011204esl.

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34

Wu, Y., P. M. Hermkens, B. W. H. van de Loo, et al. "Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition." Journal of Applied Physics 114, no. 2 (2013): 024308. http://dx.doi.org/10.1063/1.4813136.

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35

Khalil, Souad G., Mahdi M. Mutter, and Oras A. Jassim. "Fabrication and Characterization of Nb₂O₅ Dopant Al Thin Films Prepared by DC Reactive Plasma Sputtering Technique." Key Engineering Materials 900 (September 20, 2021): 143–54. http://dx.doi.org/10.4028/www.scientific.net/kem.900.143.

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The development of niobium oxide (Nb2O5) thin films is an important work as a result of wide applications of this oxide in the field of material science and thin-film applications. In this study, thin-film microstructures of aluminum (Al)-doped Nb2O5 were prepared by DC plasma sputtering on glasses substrate. The ratio of doping was (0.5, 1, and 1.5) wt. % Al. The obtained samples were thermally treated at 450 °C. Characterized and analyzed the physical properties by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), atomic force microscopy (AFM), and U

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36

Wagner, Günter, M. Schmidbauer, K. Irmscher, P. Tanner, and R. Fornari. "P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)." Materials Science Forum 615-617 (March 2009): 165–68. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.165.

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Single-crystalline 3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Aluminium from a trimethylaluminium (TMA) source was used for p-type doping. The atomic Al and carrier concentrations in the layers were determined as a function of the partial pressure of the TMA source gas. Secondary ion mass spectroscopy (SIMS), Hall-effect measurements at room temperature and four-point electrical resistivity method were applied to measure the atomic and electrically active Al concentrations. The crystalline perfection of the layers was

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37

Zhang, Chunhong, and Zhongzheng Zhang. "Effect of Co-Doping on the Photoelectric Properties of the Novel Two-Dimensional Material Borophene." International Journal of Optics 2023 (November 6, 2023): 1–9. http://dx.doi.org/10.1155/2023/1603014.

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Borophene is a novel two-dimensional material with abundant crystal structure and photoelectric properties. We focus on the effect of co-doping on the electronic structure and optical properties of borophene using the first-principles method. The results show that the structure of Al and Ga co-doped borophene is obviously distorted because Al and Ga atoms have formed bonds with a bond length of 2.378 Å, and the two B atoms that bond together with Al and Ga are no longer formed bonds. However, it is also a two-dimensional planar structure after co-doping. After co-doping, the band gap width of

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Ali, Liqaa S., and Aliyah A. Shihab. "Ag2Te thin films' structural and optical characteristics as a result of Al doping." Journal of Ovonic Research 19, no. 4 (2023): 433–38. http://dx.doi.org/10.15251/jor.2023.194.433.

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During the course of this investigation, Ag2Te and Al-doped Ag2Te films' structural and optical properties at various concentrations (1%, 1.5%) are examined. The thermal evaporation method was used to deposit 400-nm thick Ag2Te thin films on glass substrates at 100 °C. The structure is monoclinic of the polycrystalline films were revealed by (XRD). Between 1 and 1.5%, the activated precursor did not vary with respect to the favored direction. According to the XRD results, the mean crystal sizes ranged from 25.62 to 37.13 nm. The surface of the film is incredibly smooth, according to atomic for

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Zhou, Ji Cheng, and Yong Min Chen. "The Effect of the Doping Profile in Aluminum Back-Surface-Field on the Electronic Properties of c-Si Solar Cells." Materials Science Forum 654-656 (June 2010): 1690–93. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1690.

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The electronic properties of the solar cells were greatly influenced by the aluminum atomic concentration in Al-BSF region under that the Al-BSF is doped heavily. The effects of the dopincg profile in heavily-doped Al-BSF on electronic properties of n+pp+ monocrystalline solar cells were investigated by PC1D. The results show that the electronic properties of solar cells are almost independent of the doping profile of the Al-BSF, but are more or less affected by the BSF profile if the solar cell back surface is passivated well with the BSRV less than ~105cm/s. When the sheet resistance is abou

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Kulkarni, Swati S., Gajanan A. Bodkhe, Pasha W. Sayyad, Megha A. Deshmukh, S. S. Hussaini, and Mahendra D. Shirsat. "Optimization of Aluminium Doping Concentration in Titanium Dioxide Nanoparticles Photo Anode for Enhancing Efficiency of Dye-Sensitized Solar Cell." International Journal of Nanoscience 19, no. 06 (2020): 2050009. http://dx.doi.org/10.1142/s0219581x2050009x.

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Well crystallized Aluminium (Al) doped Titanium dioxide (TiO2) nanoparticles with various doping concentration (0, 0.05[Formula: see text]M, 0.07[Formula: see text]M, 0.09[Formula: see text]M and 0.11[Formula: see text]M) were synthesized successfully by sol–gel route to develop the photo anode of Dye Sensitized Solar Cell (DSSC). Anatase crystalline nature of TiO2 nanoparticles was confirmed using X-ray diffraction (XRD) and Raman spectrophotometer. The Atomic Force Microscopy (AFM) was used to investigate the morphology of the photo anode (Al-doped TiO2 nanoparticles). The photovoltaic perfo

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Zhu, Peng, Yang Lu, and Xiaolei Chen. "Effects of Different Particle-Sized Al Powders on Sintering Properties of Aluminum Paste in Crystalline Silicon Solar Cell." International Journal of Photoenergy 2022 (November 3, 2022): 1–8. http://dx.doi.org/10.1155/2022/4528768.

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In this paper, the effects of particle size difference of aluminum (Al) powder on physical properties of Al powder and sintering properties of Al paste were investigated. For this purpose, respectively, Al powders with four mean particle sizes were used, which were obtained by two classifications using the same nitrogen atomization process. Thermal analysis results showed that the smaller the Al particle size, the lower the oxidation temperature and the higher the reaction enthalpy, indicating higher reactivity of the Al powder. Four Al powders were prepared into Al paste by the same process,

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Chen, Chang, Jinhu Zhang, Guofeng Dong, et al. "Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation." Nanoscale Research Letters 9, no. 1 (2014): 235. http://dx.doi.org/10.1186/1556-276x-9-235.

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Alev, Onur, Okan Özdemir, Alp Kılıç, Doğan Akcan, and Serkan Büyükköse. "Effect of Al doping on structural and optical properties of atomic layer deposited ZnO thin films." Surfaces and Interfaces 52 (September 2024): 104942. http://dx.doi.org/10.1016/j.surfin.2024.104942.

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Geng, Yang, Li Guo, Sai-Sheng Xu, et al. "Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition." Journal of Physical Chemistry C 115, no. 25 (2011): 12317–21. http://dx.doi.org/10.1021/jp2023567.

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Mahmood, Husham Kamil, and Bushra H. Hussein. "An Effect of Al on the Properties of ZnIn₂Se₄ Thin Film." Journal of Physics: Conference Series 2857, no. 1 (2024): 012006. http://dx.doi.org/10.1088/1742-6596/2857/1/012006.

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Abstract Zinc-indium-selenide ZnIn2Se4 (ZIS) ternary chalcopyrite thin film on glass with a 500 nm thickness was fabricated by using the thermal evaporation system with a pressure of approximately 2.5×10−5 mbar and a deposition rate of 12 Å/s. The effect of aluminum (Al) doping with 0.02 and 0.04 ratios on the structural and optical properties of film was examined. The utilization of X-ray diffraction (XRD) was employed to showcase the influence of aluminum doping on structural properties. XRD shows that thin ZIS-pure, Al-doped films at RT are polycrystalline with tetragonal structure and pref

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Boudalia, Nassim, Jean Marc Raulot, Etienne Patoor, and Claude Esling. "Phase Stability Study of the Shape Memory Alloy CuAl-X (X: Be, Zn, Ti, Ni, Ag and Au) by Ab Initio Calculations." Materials Science Forum 879 (November 2016): 250–55. http://dx.doi.org/10.4028/www.scientific.net/msf.879.250.

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Shape memory alloys (SMA) have been at the forefront of research in recent years. They have been used for a wide variety of applications in various fields. This work presents a brief study at the atomic scale of Cu-Al based Shape Memory Alloys. Using first-principles Density Functional Theory (DFT) method, the stability of different austenitic and martensitic phases of Cu3Al, the effect of intrinsic vacancies, the doping effect by an element X (X = Be, Zn, Ti, Ni, Ag and Au) have been studied.

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Tammarugwattana, Narin, Kitipong Mano, Chaloempol Saributr, et al. "Growth and Characterizations of Tin-Doped on Nickel-Phthalocyanine as a Novel Nanomaterial." Advanced Materials Research 1131 (December 2015): 39–42. http://dx.doi.org/10.4028/www.scientific.net/amr.1131.39.

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Tin-doped nickel phthalocyanine thin films (Sn-doped NiPc) were deposited by thermal co-evaporation method. Doping concentration of tin in NiPc was controlled via different deposition rates between metal dopent and host organic material. Properties of the thin films doped by tin in the range of 3 to 15% were characterized by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of Al/Sn-doped-NiPc/ITO devices i.e. charge carrier concentration and carrier mobility

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Mokhtari, H., M. Benhaliliba, A. Boukhachem, M. S. Aida, and Y. S. Ocak. "Nanostructured device based on coated ZnO layer as a window in solar cell applications." Materials Science-Poland 36, no. 4 (2018): 570–83. http://dx.doi.org/10.2478/msp-2018-0090.

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AbstractThis work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5 °C. For the as-grown layers, M- to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topog

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Yang, Weiguang, Miao He, Liu Yang, et al. "Study on aluminum concentration on optical and electrical properties of AZO thin films fabricated by ultrasonic spray pyrolysis." International Journal of Modern Physics B 33, no. 22 (2019): 1950246. http://dx.doi.org/10.1142/s0217979219502461.

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In this work, transparent and conductive Al-doped ZnO (AZO) nanofilms were prepared on quartz substrate by ultrasonic spray pyrolysis (USP) method. The effects of Al/Zn atomic ratios on the micro-structural, morphological, optical photoluminescence and electrical properties of AZO thin films were effectively investigated. All the prepared samples showed hexagonal wurtzite structure. The scanning electron microscopy (SEM) showed that the surface morphology of all samples changed with the substrate temperature. The average transmittance of all AZO samples was higher than 85% in the visible regio

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Bak, So-Young, Se-Hyeong Lee, Hyeongrok Jang, Minseong Kim, Sungjae Kim, and Moonsuk Yi. "Transparent Al-Doped ZnO Thin Films for High-Sensitivity NO2 Gas Sensing." Sensors 25, no. 12 (2025): 3622. https://doi.org/10.3390/s25123622.

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This study developed a transparent NO2 gas sensor with enhanced sensing performance and high optical transmittance. Al-doped ZnO thin films were deposited by atomic layer deposition, which was chosen for its capability to precisely control surface chemistry at the atomic scale. Oxygen vacancies were effectively introduced by utilizing trimethylaluminum, a strongly reducing Al2O3 precursor, thereby increasing carrier concentration and enhancing gas-sensing performance. By adjusting the Al doping level, the optimized device achieved a 50 °C reduction in operating temperature, a 66.2-fold increas

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