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Journal articles on the topic 'Atomic layer epitaxy ZnS'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Hyvärinen, Jaakko, Martti Sonninen, and Runar Törnqvist. "Mass spectrometry study of ZnS atomic layer epitaxy process." Journal of Crystal Growth 86, no. 1-4 (January 1988): 695–99. http://dx.doi.org/10.1016/0022-0248(90)90797-o.

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2

Wu, Yi-hong, Takashi Toyoda, Yoichi Kawakami, Shizuo Fujita, and Shigeo Fujita. "Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy." Japanese Journal of Applied Physics 29, Part 2, No. 5 (May 20, 1990): L727—L730. http://dx.doi.org/10.1143/jjap.29.l727.

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3

Oikkonen, M., T. Tuomi, and M. Luomajärvi. "Density of ZnS thin films grown by atomic layer epitaxy." Journal of Applied Physics 63, no. 4 (February 15, 1988): 1070–74. http://dx.doi.org/10.1063/1.340009.

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4

Tadokoro, Toyoyasu, Shin-ichi Ohta, Takashi Ishiguro, Yukio Ichinose, Satoshi Kobayashi, and Naoki Yamamoto. "Atomic layer epitaxy growth of ZnS on (100)GaAs using molecular beam epitaxy system." Journal of Crystal Growth 148, no. 3 (March 1995): 223–31. http://dx.doi.org/10.1016/0022-0248(94)00149-g.

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5

Ihanus, Jarkko, Mikko Ritala, Markku Leskelä, Thomas Prohaska, Roland Resch, Gernot Friedbacher, and Manfred Grasserbauer. "AFM studies on ZnS thin films grown by atomic layer epitaxy." Applied Surface Science 120, no. 1-2 (November 1997): 43–50. http://dx.doi.org/10.1016/s0169-4332(97)00226-2.

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6

Kim, Y. G., Y. S. Nam, K. S. Baek, and S. K. Chang. "Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy." Current Applied Physics 9, no. 6 (November 2009): 1304–6. http://dx.doi.org/10.1016/j.cap.2008.10.010.

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7

Koukitu, Akinori, Takayuki Miyazawa, Hitoshi Ikeda, and Hisashi Seki. "Atmospheric pressure atomic layer epitaxy of ZnS using Zn and H2S." Journal of Crystal Growth 123, no. 1-2 (September 1992): 95–100. http://dx.doi.org/10.1016/0022-0248(92)90013-9.

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8

Hsu, Chin-Tsar, M. Yokoyama, and Y. K. Su. "Growth of znse/zns strained-layer superlattice on si substrates by atomic layer epitaxy." Materials Chemistry and Physics 51, no. 2 (November 1997): 102–6. http://dx.doi.org/10.1016/s0254-0584(97)80276-3.

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9

Chen, Nyen-Ts, Meiso Yokoyama, and Herng-Yih Ueng. "Atomic layer epitaxy growth of ZnS Se1− epitaxial layers lattice-matched to Si substrates." Journal of Crystal Growth 216, no. 1-4 (June 2000): 152–58. http://dx.doi.org/10.1016/s0022-0248(00)00433-4.

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10

Innocenti, M., G. Pezzatini, F. Forni, and M. L. Foresti. "CdS and ZnS Deposition on Ag(111) by Electrochemical Atomic Layer Epitaxy." Journal of The Electrochemical Society 148, no. 5 (2001): C357. http://dx.doi.org/10.1149/1.1360208.

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11

Ohta, Shin-ichi, Satoshi Kobayashi, Futao Kaneko, and Ko-ichi Kashiro. "Growth of CdS/ZnS superlattices at low temperature by atomic layer epitaxy." Journal of Crystal Growth 106, no. 2-3 (November 1990): 166–74. http://dx.doi.org/10.1016/0022-0248(90)90060-x.

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12

Lindroos, Seppo, Tapio Kanniainen, and Markku Leskelä. "Growth of ZnS thin films by liquid-phase atomic layer epitaxy (LPALE)." Applied Surface Science 75, no. 1-4 (January 1994): 70–74. http://dx.doi.org/10.1016/0169-4332(94)90138-4.

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13

Takeda, T., T. Kurosu, M. Lida, and T. Yao. "Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy." Surface Science Letters 174, no. 1-3 (August 1986): A458. http://dx.doi.org/10.1016/0167-2584(86)90096-4.

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14

Takeda, T., T. Kurosu, M. Lida, and T. Yao. "Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy." Surface Science 174, no. 1-3 (August 1986): 548–49. http://dx.doi.org/10.1016/0039-6028(86)90469-3.

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15

Liu, Chun Hsing, Meiso Yokoyama, Yan Kuin Su, and Nien Chung Lee. "Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition." Japanese Journal of Applied Physics 35, Part 1, No. 5A (May 15, 1996): 2749–53. http://dx.doi.org/10.1143/jjap.35.2749.

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16

Bhise, Milind D., Brian Sanders, Nic Dalacu, and Adrian H. Kital. "Coverage of rough substrates by ZnS using vacuum evaporation and atomic layer epitaxy." Journal of Materials Science 24, no. 9 (September 1989): 3164–68. http://dx.doi.org/10.1007/bf01139036.

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17

Yamaga, Shigeki, and Akihiko Yoshikawa. "Atomic layer epitaxy of ZnS by a new gas supplying system in low-pressure metalorganic vapor phase epitaxy." Journal of Crystal Growth 117, no. 1-4 (February 1992): 152–55. http://dx.doi.org/10.1016/0022-0248(92)90735-2.

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18

Szczerbakow, A., E. Dynowska, M. Godlewski, and K. Swiatek. "Monocrystalline ZnS-sphalerite films grown by atomic layer epitaxy in a gas flow system." Journal of Crystal Growth 183, no. 4 (February 1998): 708–10. http://dx.doi.org/10.1016/s0022-0248(97)00537-x.

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19

Godlewski, M., E. Guziewicz, A. Szczerbakow, K. Kopalko, E. Dynowska, M. R. Phillips, A. Cricenti, and M. Girasole. "Optical and Structural Properties of Thin Films of ZnS Grown by Atomic Layer Epitaxy." Journal of Wide Bandgap Materials 9, no. 1-2 (July 1, 2001): 55–63. http://dx.doi.org/10.1106/152451102025830.

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20

Fujiwara, Hiroyuki, Hideaki Kiryu, and Isamu Shimizu. "Carrier transport properties of iodine‐doped (ZnS)3(ZnSe)42ordered alloys grown by atomic layer epitaxy." Journal of Applied Physics 77, no. 8 (April 15, 1995): 3927–33. http://dx.doi.org/10.1063/1.358572.

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21

Torimoto, Tsukasa, Atsushi Obayashi, Susumu Kuwabata, Hidehiro Yasuda, Hirotaro Mori, and Hiroshi Yoneyama. "Preparation of Size-Quantized ZnS Thin Films Using Electrochemical Atomic Layer Epitaxy and Their Photoelectrochemical Properties." Langmuir 16, no. 13 (June 2000): 5820–24. http://dx.doi.org/10.1021/la000133y.

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22

Hunter, Adolph, and Adrian H. Kitai. "A novel atmospheric pressure technique for the deposition of ZnS by atomic layer epitaxy using dimethylzinc." Journal of Crystal Growth 91, no. 1-2 (August 1988): 111–18. http://dx.doi.org/10.1016/0022-0248(88)90374-0.

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23

Liu, Chun Hsing, Meiso Yokoyama, and Yan Kuin Su. "Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate." Japanese Journal of Applied Physics 35, Part 1, No. 10 (October 15, 1996): 5416–20. http://dx.doi.org/10.1143/jjap.35.5416.

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24

Szczerbakow, A., M. Godlewski, E. Dynowska, V. Yu Ivanov, K. Świątek, E. M. Goldys, and M. R. Phillips. "Structure, Surface Morphology and Optical Properties of Thin Films of ZnS and CdS Grown by Atomic Layer Epitaxy." Acta Physica Polonica A 94, no. 3 (September 1998): 579–82. http://dx.doi.org/10.12693/aphyspola.94.579.

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25

Fujiwara, Hiroyuki, Toshiyuki Nabeta, and Isamu Shimizu. "Structures and Properties of(ZnS)n(ZnSe)m(n=1–4)Ordered Alloys Grown by Atomic Layer Epitaxy." Japanese Journal of Applied Physics 33, Part 1, No. 5A (May 15, 1994): 2474–78. http://dx.doi.org/10.1143/jjap.33.2474.

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26

Zeinert, A., C. Barthou, P. Benalloul, and J. Benoit. "Excitation efficiency and field non-uniformity in ZnS-based thin-film electroluminescent devices grown by atomic layer epitaxy." Semiconductor Science and Technology 12, no. 11 (November 1, 1997): 1479–86. http://dx.doi.org/10.1088/0268-1242/12/11/026.

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27

Oikkonen, M., M. Blomberg, T. Tuomi, and M. Tammenmaa. "X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy." Thin Solid Films 124, no. 3-4 (February 1985): 317–21. http://dx.doi.org/10.1016/0040-6090(85)90282-2.

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28

Nelson, Jeffrey G. "Summary Abstract: Epitaxial growth of ZnS and ZnSe on the low index faces of GaAs using atomic layer epitaxy." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 5, no. 4 (July 1987): 2140–41. http://dx.doi.org/10.1116/1.574936.

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29

Lahtinen, J. A., A. Lu, T. Tuomi, and M. Tammenmaa. "Effect of growth temperature on the electronic energy band and crystal structure of ZnS thin films grown using atomic layer epitaxy." Journal of Applied Physics 58, no. 5 (September 1985): 1851–53. http://dx.doi.org/10.1063/1.336038.

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30

Liu, C. H., M. Yokoyama, Y. K. Su, and N. C. Lee. "Self-limiting growth of ZnS on Si substrates at a growth rate of 0.7 monolayers per operating cycle by atomic layer epitaxy using MOCVD." Journal of the Society for Information Display 5, no. 2 (1997): 99. http://dx.doi.org/10.1889/1.1985136.

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31

Oikkonen, M., M. Tammenmaa, and M. Asplund. "Comparison of ZnS thin films grown by atomic layer epitaxy from zinc acetate and zinc chloride: An X-ray diffraction and spectroscopic ellipsometric study." Materials Research Bulletin 23, no. 1 (January 1988): 133–42. http://dx.doi.org/10.1016/0025-5408(88)90235-8.

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32

Martovitsky, V. P., V. I. Kozlovsky, P. I. Kuznetsov, Ya K. Skasyrsky, and G. G. Yakushcheva. "Layer structure of Zn1−x CdxSe films grown by vapor-phase epitaxy from metal-organic compounds on Cd0.92Zn0.08S(0001) substrates." Semiconductors 37, no. 3 (March 2003): 294–301. http://dx.doi.org/10.1134/1.1561521.

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33

Suntola, Tuomo. "Atomic layer epitaxy." Thin Solid Films 216, no. 1 (August 1992): 84–89. http://dx.doi.org/10.1016/0040-6090(92)90874-b.

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34

Suntola, Tuomo. "Atomic layer epitaxy." Materials Science Reports 4, no. 5 (1989): 261–312. http://dx.doi.org/10.1016/s0920-2307(89)80006-4.

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35

Niinistö, Lauri. "Atomic layer epitaxy." Current Opinion in Solid State and Materials Science 3, no. 2 (April 1998): 147–52. http://dx.doi.org/10.1016/s1359-0286(98)80080-6.

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36

Goodman, Colin H. L., and Markus V. Pessa. "Atomic layer epitaxy." Journal of Applied Physics 60, no. 3 (August 1986): R65—R82. http://dx.doi.org/10.1063/1.337344.

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37

Suntola, Tuomo, and Jaakko Hyvarinen. "Atomic Layer Epitaxy." Annual Review of Materials Science 15, no. 1 (August 1985): 177–95. http://dx.doi.org/10.1146/annurev.ms.15.080185.001141.

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38

Simpson, M., P. Smith, and G. A. Dederski. "Atomic Layer Epitaxy." Surface Engineering 3, no. 4 (January 1987): 343–48. http://dx.doi.org/10.1179/sur.1987.3.4.343.

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39

AOYAGI, Yoshinobu. "Laser atomic layer epitaxy." Journal of the Japan Society for Precision Engineering 54, no. 4 (1988): 674–78. http://dx.doi.org/10.2493/jjspe.54.674.

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40

AOYAGI, Yoshinobu, Atsutoshi DOI, Souhachi IWAI, and Susumu NAMBA. "Laser atomic layer epitaxy." Review of Laser Engineering 15, no. 5 (1987): 268–75. http://dx.doi.org/10.2184/lsj.15.268.

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41

NISHINAGA, Tatau. "From Atomic Layer Controlled Epitaxy to Atomic Position Controlled Epitaxy." Nihon Kessho Gakkaishi 33, no. 3 (1991): 103–6. http://dx.doi.org/10.5940/jcrsj.33.103.

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42

Yoder, Max N. "Group IV atomic layer epitaxy." Thin Solid Films 225, no. 1-2 (March 1993): 145–49. http://dx.doi.org/10.1016/0040-6090(93)90144-e.

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43

Gong, J. R., D. Jung, N. A. El‐Masry, and S. M. Bedair. "Atomic layer epitaxy of AlGaAs." Applied Physics Letters 57, no. 4 (July 23, 1990): 400–402. http://dx.doi.org/10.1063/1.103675.

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44

Nagamatsu, Kentaro, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki. "Atomic layer epitaxy of AlGaN." physica status solidi (c) 7, no. 10 (June 22, 2010): 2368–70. http://dx.doi.org/10.1002/pssc.200983862.

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45

Bedair, Salah M. "Atomic-layer epitaxy for heterostructures." JOM 45, no. 2 (February 1993): 46–50. http://dx.doi.org/10.1007/bf03222871.

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46

Imai, Shigeru, Satoru Takagi, Toshio Iizuka, Osamu Sugiura, and Masakiyo Matsumura. "Atomic Layer Epitaxy of Silicon." Materials and Manufacturing Processes 10, no. 2 (March 1995): 267–81. http://dx.doi.org/10.1080/10426919508935020.

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47

Bedair, S. M. "Atomic layer epitaxy deposition processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 1 (January 1994): 179. http://dx.doi.org/10.1116/1.587179.

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48

Aoyagi, Yoshinobu, Takashi Meguro, Sohachi Iwai, and Atsutoshi Doi. "Laser-assisted atomic layer epitaxy." Materials Science and Engineering: B 10, no. 2 (October 1991): 121–32. http://dx.doi.org/10.1016/0921-5107(91)90118-f.

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49

Bertone, D. "Atomic layer epitaxy of InP." Journal of Electronic Materials 21, no. 3 (March 1992): 265–68. http://dx.doi.org/10.1007/bf02660452.

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50

Gregory, Brian W., and John L. Stickney. "Electrochemical atomic layer epitaxy (ECALE)." Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 300, no. 1-2 (February 1991): 543–61. http://dx.doi.org/10.1016/0022-0728(91)85415-l.

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