Relevant bibliographies by topics / Atomic vapor cells

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Atomic vapor cells'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Atomic vapor cells.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Atomic vapor cells"

1

Yanjun Zhang, Yanjun Zhang, Yunchao Li Yunchao Li, Xuwen Hu Xuwen Hu, Lu Zhang Lu Zhang, Zhaojun Liu Zhaojun Liu, Kaifang Zhang Kaifang Zhang, Shihao Mou Shihao Mou, Shougang Zhang Shougang Zhang, and Shubin Yan Shubin Yan. "Micro-fabrication process of vapor cells for chip-scale atomic clocks." Chinese Optics Letters 17, no. 4 (2019): 040202. http://dx.doi.org/10.3788/col201917.040202.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Han, Runqi, Zheng You, Yue Shi, and Yong Ruan. "Investigation on spin relaxation of microfabricated vapor cells with buffer gas." International Journal of Applied Electromagnetics and Mechanics 64, no. 1-4 (December 10, 2020): 1391–99. http://dx.doi.org/10.3233/jae-209458.

Full text
Abstract:
MEMS vapor cells with buffer gas are the core components of chip scale atomic sensors due to the spin precession. We microfabricated rubidium vapor cells filled with neon based on MEMS technology and characterized the performance of MEMS vapor cells by measuring the longitudinal relaxation time. The dependence of spin relaxation time on buffer gas pressure and cell temperature was theoretically and experimentally investigated and the consistency was achieved. This provides a potential simpler approach to evaluate the performance of chip scale atomic sensors, such as atomic magnetometers, based on MEMS vapor cells.
APA, Harvard, Vancouver, ISO, and other styles
3

Noor, Radwan M., Mohammad H. Asadian, and Andrei M. Shkel. "Design Considerations for Micro-Glassblown Atomic Vapor Cells." Journal of Microelectromechanical Systems 29, no. 1 (February 2020): 25–35. http://dx.doi.org/10.1109/jmems.2019.2949084.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Knapkiewicz, Pawel. "Technological Assessment of MEMS Alkali Vapor Cells for Atomic References." Micromachines 10, no. 1 (December 31, 2018): 25. http://dx.doi.org/10.3390/mi10010025.

Full text
Abstract:
This paper is a review that surveys work on the fabrication of miniature alkali vapor cells for miniature and chip-scale atomic clocks. Technology on microelectromechanical systems (MEMS) cells from the literature is described in detail. Special attention is paid to alkali atom introduction methods and sealing of the MEMS structure. Characteristics of each technology are collated and compared. The article’s rhetoric is guided by the proposed classification of MEMS cell fabrication methods and contains a historical outline of MEMS cell technology development.
APA, Harvard, Vancouver, ISO, and other styles
5

Böhi, Pascal, and Philipp Treutlein. "Simple microwave field imaging technique using hot atomic vapor cells." Applied Physics Letters 101, no. 18 (October 29, 2012): 181107. http://dx.doi.org/10.1063/1.4760267.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Knappe, S., V. Gerginov, P. D. D. Schwindt, V. Shah, H. G. Robinson, L. Hollberg, and J. Kitching. "Atomic vapor cells for chip-scale atomic clocks with improved long-term frequency stability." Optics Letters 30, no. 18 (September 15, 2005): 2351. http://dx.doi.org/10.1364/ol.30.002351.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Xu, Jian, Zhi Yin Gan, Qiang Lv, and Sheng Liu. "A Method for Atomic Vapor Cell Fabrication with Cavity by Laser Drilling." Advanced Materials Research 403-408 (November 2011): 4328–32. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.4328.

Full text
Abstract:
Atomic vapor cell is the most important component for atomic clock. A few vapor cells were fabricated based on multi-stack anodic bonding with four fabrication methods. By comparing with three traditional cavity fabrication methods and the first failed method by the laser drilling, it was found that the surface contamination induced in laser drilling and the roughness blocked the successful bonding. The surface roughness has to be less than 8 nm and in this case the method of laser drilling can be used successfully and with high efficiency, resulting in a novel process for atomic vapor cell fabrication with cavity.
APA, Harvard, Vancouver, ISO, and other styles
8

Raiford, James A., Solomon T. Oyakhire, and Stacey F. Bent. "Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells." Energy & Environmental Science 13, no. 7 (2020): 1997–2023. http://dx.doi.org/10.1039/d0ee00385a.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Zhang, Lu, Wendong Zhang, Shougang Zhang, and Shubin Yan. "Micro-fabrication and hermeticity measurement of alkali-atom vapor cells based on anodic bonding." Chinese Optics Letters 17, no. 10 (2019): 100201. http://dx.doi.org/10.3788/col201917.100201.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Han, Runqi, Zheng You, Fan Zhang, Hongbo Xue, and Yong Ruan. "Microfabricated Vapor Cells with Reflective Sidewalls for Chip Scale Atomic Sensors." Micromachines 9, no. 4 (April 11, 2018): 175. http://dx.doi.org/10.3390/mi9040175.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Atomic vapor cells"

1

Maurice, Vincent. "Design, microfabrication and characterization of alkali vapor cells for miniature atomic frequency references." Thesis, Besançon, 2016. http://www.theses.fr/2016BESA2001.

Full text
Abstract:
Les horloges atomiques miniatures présentent des stabilités de fréquence inégalées avec des volumes de quelquescentimètres cubes et des consommations inférieures à 100mW.Dans cette thèse, les paramètres optimaux concernant la conception et la fabrication des cellules à vapeur decésium, un des composant clés de ce type d’horloges, sont définis. Ainsi, les performances de plusieurs cellulesont été caractérisées en condition d’horloge à court et long terme. En parallèle, des solutions sont proposéespour pallier à certaines limitations telles que la plage de température opérationnelle, le coût de fabrication dudispositif et la facilité d’assemblage du module physique.Un nouveau mélange de gaz tampon composé de néon et d’hélium peut étendre la plage de fonctionnementau-dessus de 80 C, en adéquation avec les besoins industriels. A l’inverse des gaz tampon usuels, ce mélangeest compatible avec les dispensers de césium solides, dont la fiabilité est établie.Outre les gaz tampon, les revêtements permettent également de limiter la relaxation induite par les parois dela cellule. Ici, des revêtements d’octadécyltrichlorosilane sont étudiés. Un effet anti-relaxant a été observé dansdes cellules centimétriques et un procédé a été développé pour revêtir des cellules micro-fabriquées.D’autres sources de césium sont présentées pour s’affranchir des inconvénients propres aux dispensers solides.Un dispenser sous forme de pâte, qui peut être déposée collectivement, a été étudié et montre des densitésatomiques stables jusqu’à présent. Un concept de vannes hermétiques micro-fabriquées a été proposé poursceller hermétiquement et séparer des cellules d’un réservoir de césium commun.Les premières étapes vers un module physique micro-fabriqué sont ensuite présentées. En particulier, un designoriginal de cellule combinant des réseaux de diffraction à une cavité en silicium formée par gravure anisotropea été caractérisé et a montré des contrastes CPT remarquables malgré un volume de cavité réduit, ce qui permettraitde réaliser un module physique particulièrement compact. Enfin, des cellules intégrant des résistanceschauffantes et thermométriques ont été fabriquées et leur compatibilité vis-à-vis du champ magnétique généréa été caractérisée dans un prototype de module physique compact
Chip-scale atomic clocks (CSACs) provide unprecedented frequency stability within volumes down to a fewcubic centimeters and power consumptions as low as 100mW.In this work, we determine the optimal parameters regarding the design and the fabrication of cesium vaporcells, one of the key components of a CSAC. For this purpose, cells were characterized on both short and longtermperformances in clock setups. In addition, we propose solutions to overcome present limitations includingthe operating temperature range, the device microfabrication cost and the ease of integration of the physicspackage.A novel mixture of buffer-gas composed of neon and helium was found to potentially extend the operating rangeof the device above 80 C, meeting the industrial requirements. Unlike the well-known buffer gas compositions,this mixture is compatible with solid cesium dispensers whose reliability is established. As an alternativeto buffer gases, wall coatings are known to limit the relaxation induced by sidewalls. Here, we investigatedoctadecyltrichlorosilane (OTS) coatings. An anti-relaxation effect has been observed in centimeter-scale cellsand a process was developed to coat microfabricated cells.Other cesium sources have been investigated to overcome the drawbacks imposed by solid cesium dispensers. Apaste-like dispenser, which can be deposited collectively, was explored and has shown stable atomic densities sofar. Single-use zero-leak micro valves were also proposed to hermetically seal and detach cells from a commoncesium reservoir.Eventually, the first steps toward a microfabricated physics package were made. In particular, an originalcell design combining diffraction gratings with an anisotropically etched single-crystalline silicon sidewalls wascharacterized and exhibited remarkable CPT contrasts despite a reduced cavity volume, which could lead to amore compact physics package. Finally, cells with integrated heating and temperature sensing resistors werefabricated and their magnetic field compliance was characterized in a compact physics package prototype
APA, Harvard, Vancouver, ISO, and other styles
2

Conkey, Donald B. "On-Chip Atomic Spectroscopy." Diss., CLICK HERE for online access, 2007. http://contentdm.lib.byu.edu/ETD/image/etd1746.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Sinsermsuksakul, Prasert. "Development of Earth-Abundant Tin(II) Sulfide Thin-Film Solar Cells by Vapor Deposition." Thesis, Harvard University, 2013. http://dissertations.umi.com/gsas.harvard:10987.

Full text
Abstract:
To sustain future civilization, the development of alternative clean-energy technologies to replace fossil fuels has become one of the most crucial and challenging problems of the last few decades. The thin film solar cell is one of the major photovoltaic technologies that is promising for renewable energy. The current commercial thin film PV technologies are based on \(Cu(In,Ga)Se_2\) and CdTe. Despite their success in reducing the module cost below $1/Wp, these absorber materials face limitations due to their use of scarce (In and Te) and toxic (Cd) elements. One promising candidate for an alternative absorber material is tin monosulfide (SnS). Composed of cheap, non-toxic and earth-abundant elemental constituents, SnS can potentially provide inexpensive PV modules to reach the global energy demand in TW levels. Because of the high volatility of sulfur and various oxidation states of tin, non- stoichiometric chemical composition, traces of other phases \((i.e. Sn, Sn_2S_3, and SnS_2)\), and elemental impurities (e.g. oxygen) are usually observed in SnS films obtained from various reported deposition techniques. First, we present a process to prepare pure, stoichiometric, single-phase SnS films from atomic layer deposition (ALD). The as-deposited SnS films exhibit several attractive properties, including suitable energy band gaps \((E_{g,}~ 1.1 – 1.3 eV)\), a large absorption coefficient \((\alpha > 10^4 cm^{˗1})\), and a proper carrier concentration \(([p] ~ 10^{15} – 10^{16} cm^{˗3})\). Then, heterojunction solar cells were fabricated from p-type SnS and n-type zinc oxysulfide (Zn(O,S)). A record high active-area efficiency of 2.46 % was achieved via conduction band offset engineering by varying the oxygen-to-sulfur ratio in Zn(O,S). Finally, we address two approaches potentially used for improving a device efficiency of the SnS solar cell. First, via doping to create an n-type SnS, a p-n homojunction device could be made. We present the processes and the results of doping SnS films with antimony and chlorine, potential n-type dopants. Second, by post-deposition heat treatment, an improvement in the transport properties of SnS film can be achieved. We discuss the effect of temperature and an annealing ambient \((N_2, H_2S\), and sulfur) on grain growth and the electrical properties of annealed SnS films.
Chemistry and Chemical Biology
APA, Harvard, Vancouver, ISO, and other styles
4

Sun, Leizhi. "Improved Thin Film Solar Cells Made by Vapor Deposition of Earth-Abundant Tin(II) Sulfide." Thesis, Harvard University, 2014. http://dissertations.umi.com/gsas.harvard:11539.

Full text
Abstract:
Tin(II) sulfide (SnS) is an earth-abundant, inexpensive, and non-toxic absorber material for thin film solar cells. SnS films are deposited by atomic layer deposition (ALD) through the reaction of a tin precursor, bis(N,N'-diisopropylacetamidinato)tin(II), and hydrogen sulfide. The SnS films demonstrate excellent surface morphology, crystal structure, phase purity, stoichiometry, elemental purity, and optical and electrical properties.
Engineering and Applied Sciences
APA, Harvard, Vancouver, ISO, and other styles
5

Hakhumyan, Hrant. "Study of optical and magneto processes in Rb atomic vapor layer of nanometric thickness." Phd thesis, Université de Bourgogne, 2012. http://tel.archives-ouvertes.fr/tel-00764958.

Full text
Abstract:
Using a narrow-band resonant fluorescence spectra from a nano-cell with a thickness of L= [lambda]/2, and VSOP resonances formed at a thickness L =[lambda] ([lambda] is the wavelength of the resonant radiation), for the first time it was experimentally investigated the behaviour of the frequency and intensity (transition probabilities) of the atomic hyperfine structure transitions between the 85Rb, 87Rb, D1 and D2 lines Zeeman sublevels in external magnetic fields in range 5 - 7000G. The behaviour of tens of previously unstudied atomic transitions was analyzed and it is demonstrated that the intensities of these lines can both greatly increase, and decrease (tenfold). For the first time it is demonstrated that, in the case of partial pressure of neon buffer gas up to 6~torr into the nano-cell of thickness L = [lambda] filled with Rb, VSOP resonances are recorded confidently, while the addition of 0.1~torr neon buffer gas in a cell of a centimeter thickness leads to the complete disappearance of VSOP resonances formed with the help of the widely used technique of saturated absorption. It is demonstrated for the first time that the spectral width of the resonant fluorescence spectra of the rubidium nano-cell with thickness L= [lambda]/2, for all values of the neon buffer gas pressures is much narrower (6-8 times) compared with the resonant fluorescence spectra of an ordinary centimeter cell containing rubidium with the same pressures of neon
APA, Harvard, Vancouver, ISO, and other styles
6

Mirzoyan, Rafayel. "Study of the coherent effects in rubidium atomic vapor under bi-chromatic laser radiation." Phd thesis, Université de Bourgogne, 2013. http://tel.archives-ouvertes.fr/tel-00934648.

Full text
Abstract:
The effect of electromagnetically induced transparency is observed, using nanocelland microcell. The EIT-resonance with good parameters (high contrast and small FWHM) is obtained in thick cells. The EIT-resonance splitting in magnetic field is observed for the cases of D1-line of 85Rb and 85Rb. The theoretical model, explaining the EIT-resonance components frequency shift dependence on magnetic field strength is presented. The theoretical and experimental results are compared and good agreement is shown. Also the EIT-resonance behavior in hyperfine Paschen-Back regime is presented and explained. For the first time the N-type resonance in microcell is observed. Good parameters of theN-type resonance in microcell are obtained. It allows us to observe the N-type resonance behavior in magnetic field. The N-resonance splitting in magnetic field is observed for the cases of 85Rb and 85Rb. The theoretical calculations of the N-resonance components frequency shift dependence on magnetic field is presented. The theoretical and experimental results are compared and good agreement is shown. Also the N-resonance behavior in hyperfine Paschen-Back regime is presented and explained. Simultaneous observation of N- and EIT-resonance is shown. Comparison of EIT- and N-resonance is made
APA, Harvard, Vancouver, ISO, and other styles
7

Hurd, Katherine Barnett. "EIT, Slow light, and Sealing Methods for Embedding Rubidium into the ARROW System." BYU ScholarsArchive, 2010. https://scholarsarchive.byu.edu/etd/2855.

Full text
Abstract:
Light-matter interactions are fundamentally based on the quantum mechanical principles that govern photons, electrons and other fundamental particles. One very interesting phenomenon within all of light-matter interactions is Electromagnetically Induced Transparency(EIT). This phenomenon causes an otherwise absorbing atomic transition to stop absorbing through quantum mechanical interference of probability wave functions. Corresponding to that change in absorption, will be a sudden, large change in the index of refraction. This change in the index of refraction leads to another phenomenon in which the group velocity of light can be slowed down dramatically. In the past, many researchers have been able to achieve both EIT and slow light in bulk atomic vapor cells. In an attempt to miniaturize this process and we have been using a platform of Anti Resonant Reflecting Optical Waveguides (ARROW) devices to both guide light and contain the interacting matter. However, the platform creates a whole new set of challenges when integrating rubidium vapor into the hollow waveguides as rubidium is highly reactive and it is difficult to maintain an inert atmosphere for the rubidium vapor. A variety of sealing methods were attempted and their appropriateness and effectiveness was analyzed. Among these sealing methods were PMMA, Crystal Wax, Active Solder, Epoxy, and Indium Solder. PMMA, Crystal Wax and Active Solder each had major faults in one or more of the sealing requirements. We have used a high temperature epoxy with relative success to contain the rubidium vapor. However, the epoxy degrades very quickly at the high temperatures required for EIT testing. Indium solder is the most recent application method. It has high potential although we have yet to fully test its effectiveness. We were able to successfully demonstrate the first EIT and slow light on a chip with our ARROW atomic vapor cell system. In the slow light experiment, we were able to slow light down to 2.5x105m/s. The group velocity of light decreased from the standard 3x108m/s by a factor of 1200. We believe we can achieve even lower group velocities using this same platform through further experimentation.
APA, Harvard, Vancouver, ISO, and other styles
8

Brückner, Sebastian. "Atomic scale in situ control of Si(100) and Ge(100) surfaces in CVD ambient." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2014. http://dx.doi.org/10.18452/16894.

Full text
Abstract:
In dieser Arbeit wurde die atomare Struktur von Si(100)- und Ge(100)-Oberflächen untersucht, die mit metallorganischer chemischer Gasphasenabscheidung (MOCVD) für anschließende Heteroepitaxie von III-V-Halbleitern präpariert wurden. An der III-V/IV Grenzfläche werden atomare Doppelstufen auf der Substratoberfläche benötigt, um Antiphasenunordnung in den III-V-Schichten zu vermeiden. Die MOCVD-Prozessgasumgebung beeinflusst die Domänen- und Stufenbildung der Si- und Ge(100)-Oberfläche sehr stark. Deswegen wurden in situ Reflexions-Anisotropie-Spektroskopie (RAS) und Ultrahochvakuum-(UHV)-basierte oberflächensensitive Messmethoden verwendet, um die verschiedenen Oberflächen zu charakterisieren. In situ RAS ermöglicht die Identifizierung der Oberflächenstruktur und somit Kontrolle über die Oberflächenpräparation, insbesondere der Domänenbildung auf Si- und Ge(100). Beide Oberflächen wechselwirken stark mit dem H2-Prozessgas, was zu Monohydrid-Bedeckung während der Präparation führt und sogar zu Si-Abtrag während Präparation unter hohem H2-Druck. Die Erzeugung von Leerstellen auf den Terrassen bewirkt eine kinetisch bedingte Oberflächenstruktur, basierend auf Diffusion von Leerstellen und Atomen. Dadurch kommt es zu ungewöhnlichen DA-Doppelstufen auf verkippten Si(100)-Substraten während auf exakten Substraten ein schichtweiser Abtrag stattfindet. Unter niedrigem H2-Druck bildet sich eine energetisch bedingte Domänen- und Stufenstruktur. Während das H2-Prozessgas keinen direkten Einfluss auf die Stufen- und Domänenbildung von verkippten Ge(100)-Oberflächen zeigt, ist der Einfluss von Gruppe-V-Elemente entscheidend. Die As-terminierten Ge(100)-Oberflächen bilden eindomänige Oberflächen unterschiedlicher Dimerorientierung und Stufenstruktur abhängig von Temperatur und As-Quelle. Angebot von P an Ge(100)-Oberflächen durch Heizen in Tertiärbutylphosphin führt zu einer ungeordneten, P-terminierten Ge(100)-Oberfläche, die instabiler als die Ge(100):As-Oberfläche ist.
In this work, the atomic surface structure of Si(100) and Ge(100) surfaces prepared in metalorganic chemical vapor phase deposition (MOCVD) ambient was studied with regard to subsequent heteroepitaxy of III-V semiconductors. At the III-V/IV interface, double-layer steps on the substrate surface are required to avoid anti-phase disorder in the epitaxial film. The MOCVD process gas ambient strongly influences the domain and step formation of Si and Ge(100) surfaces. Therefore, in situ reflection anisotropy spectroscopy (RAS) and ultra-high vacuum-based (UHV) surface sensitive methods were applied to investigate the different surfaces. In situ RAS enabled identification of the surface structure and the crucial process steps, leading to complete control of Si and Ge(100) surface preparation. Both surfaces strongly interact with H2 process gas which leads to monohydride termination of the surfaces during preparation and Si removal during processing in high H2 pressure ambient. The generation of vacancies on the terraces induces a kinetically driven surface structure based on diffusion of vacancies and Si atoms leading to an energetically unexpected step structure on vicinal Si(100) substrates with DA-type double-layer steps, whereas Si layer-by-layer removal occurs on substrates with large terraces. Processing in low H2 pressure ambient leads to an energetically driven step and domain structure. In contrast, H2-annealed vicinal Ge(100) surfaces show no direct influence of the H2 ambient on the step structure. At the Ge(100) surface, group-V elements strongly influence step and domain formation. Ge(100):As surfaces form single domain surfaces with different majority domain and significantly different step structures depending on temperature and As source, respectively. In contrast, exposure to P by annealing in tertiarybutylphosphine leads to a very disordered P-terminated vicinal Ge(100) surface which is less stable compared to the Ge(100):As surfaces.
APA, Harvard, Vancouver, ISO, and other styles
9

Mirijanian, James Julian. "Techniques to Characterize Vapor Cell Performance for a Nuclear-Magnetic-Resonance Gyroscope." DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/724.

Full text
Abstract:
Research was performed to improve the procedures for testing performance parameters of vapor cells for a nuclear-magnetic-resonance gyroscope. In addition to summarizing the theoretical infrastructure of the technology, this research resulted in the development and successful implementation of new techniques to characterize gyro cell performance. One of the most important parameters to measure for gyro performance is the longitudinal spin lifetime of polarized xenon atoms in the vapor cell. The newly implemented technique for measuring these lifetimes matches results from the industry standard method to within 3.5% error while reducing the average testing time by 76% and increasing data resolution by 54%. The vapor cell test methods were appended with new software to expedite the analysis of test data and to investigate more subtle details of the results; one of the two isotopes of xenon in the cells tends to exhibit troublesome second-order effects during these tests due to electric-quadrupole coupling, but now the added analysis capabilities can accurately extract relevant results from such data with no extra effort. Some extraneous lifetime measurement techniques were explored with less substantial results, but they provided useful insight into the complex workings of the gyro cell test system. New criteria were established to define the signal to noise ratio on a consistent basis from cell to cell across various parameters such as cell volume, temperature, and vapor pressure. A technique for measuring gas pressures inside the sealed cells helped link cell performance to cell development processes. This led to informed decisions on filling and sealing methods that consistently yielded cells with better performance in the last few months of this work. When this research began, cells with xenon lifetimes over ten seconds were rare in our lab; by the end, anything under 30 seconds was a disappointment. Not only did the test procedures improve, but so did the parameters being tested, and quite significantly at that. At the same time, many new avenues for continued progress have been opened; the work presented here, while instrumental, is only the beginning.
APA, Harvard, Vancouver, ISO, and other styles
10

Hulbert, John Frederick. "ARROW-Based On-Chip Alkali Vapor-Cell Development." BYU ScholarsArchive, 2013. https://scholarsarchive.byu.edu/etd/3594.

Full text
Abstract:
The author presents the successful development of an on-chip, monolithic, integrated rubidium vapor-cell. These vapor-cells integrate ridge waveguide techniques with hollow-core waveguiding technology known as Anti-Resonant Reflecting Optical Waveguides (ARROWs). These devices are manufactured on-site in BYU's Integrated Microelectronic Laboratory (IML) using common silicon wafer microfabrication techniques. The ARROW platform fabrication is outlined, but the bulk of the dissertation focuses on novel packaging techniques that allow for the successful introduction and sealing of rubidium vapor into these micro-sized vapor-cells. The unique geometries and materials utilized in the ARROW platform render common vapor-cell sealing techniques unusable. The development of three generations of successful vapor-cells is chronicled. The sealing techniques represented in these three generations of vapor-cells include high-temperature epoxy seals, cold-weld copper crimping, variable pressure vacuum capabilities, indium solder seals, and electroplated passivation coatings. The performance of these seals are quantified using accelerated lifetime tests combined with optical spectroscopy. Finally, the successful probing of the rubidium absorption spectrum, electromagnetically induced transparency, and slow light on the ARROW-based vapor-cell platform is reported.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Atomic vapor cells"

1

Monroe, C., W. Swann, H. Robinson, and C. Wieman. "Very Cold Trapped Atoms in a Vapor Cell." In Collected Papers of Carl Wieman, 294–97. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812813787_0038.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Monroe, C., H. Robinson, and C. Wieman. "Observation of the cesium clock transition using laser-cooled atoms in a vapor cell." In Collected Papers of Carl Wieman, 298–300. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812813787_0039.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Atomic vapor cells"

1

Conkey, Donald B., Rebecca L. Brenning, Aaron R. Hawkins, Wenge Yang, Bin Wu, and Holger Schmidt. "Microfabrication of integrated atomic vapor cells." In Integrated Optoelectronic Devices 2007, edited by Yakov Sidorin and Christoph A. Waechter. SPIE, 2007. http://dx.doi.org/10.1117/12.700922.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Karlen, Sylvain, Gilles Buchs, Thomas Overstolz, Nicolas Torcheboeuf, Emmanuel Onillon, Jacques Haesler, and Dmitri Boiko. "MEMS atomic vapor cells for gyroscope applications." In 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFC). IEEE, 2017. http://dx.doi.org/10.1109/fcs.2017.8088879.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Chang, Zhang, Zhang Shuangyou, Guo Dengzhu, Wang Zhong, and Zhao Jianye. "Micro Rb atomic vapor cells for the chip-scale atomic clock." In 2014 IEEE International Frequency Control Symposium (FCS). IEEE, 2014. http://dx.doi.org/10.1109/fcs.2014.6859867.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Huang, M., J. Zhu, G. X. Shi, Y. H. Cao, and W. J. Wang. "Microfabricated Alkali Atom Vapor Cells for Chip Scale Atomic Clock." In 17th–18th Annual Conference and 6th–7th International Conference of the Chinese Society of Micro-Nano Technology. WORLD SCIENTIFIC, 2017. http://dx.doi.org/10.1142/9789813232808_0013.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Hulbert, John F., Brandon T. Carroll, Aaron R. Hawkins, Bin Wu, and Holger Schmidt. "Sealing techniques for on-chip atomic vapor cells." In Integrated Optoelectronic Devices 2008, edited by Selim M. Shahriar, Philip R. Hemmer, and John R. Lowell. SPIE, 2008. http://dx.doi.org/10.1117/12.763642.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Gorecki, Christophe, Nicolas Passilly, Vincent Maurice, Sylwester Bargiel, Ravinder Chutani, Rodolphe Boudot, Rémy Vicarini, and Serge Galliou. "Advanced microfabrication technologies for miniature caesium vapor cells for atomic clocks." In Optical, Opto-Atomic, and Entanglement-Enhanced Precision Metrology, edited by Selim M. Shahriar and Jacob Scheuer. SPIE, 2019. http://dx.doi.org/10.1117/12.2506225.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Kitching, J., S. Knappe, J. Moreland, L. A. Liew, V. Shah, V. Gerginov, P. D. D. Schwindt, et al. "Chip-Scale Atomic Devices Based on Microfabricated Alkali Vapor Cells." In 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference. IEEE, 2007. http://dx.doi.org/10.1109/cleoe-iqec.2007.4386689.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Kitching, John. "Chip-scale atomic devices based on microfabricated alkali vapor cells." In 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference. IEEE, 2007. http://dx.doi.org/10.1109/cleoe-iqec.2007.4387076.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Karlen, Sylvain, Jacques Haesler, Thomas Overstolz, Giovanni Bergonzi, and Steve Lecomte. "MEMS atomic vapor cells sealed by Cu-Cu thermocompression bonding." In 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC). IEEE, 2017. http://dx.doi.org/10.1109/fcs.2017.8088979.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Ban, Kazuhiro, Akira Terao, Natsuhiko Mizutani, Kazuya Tsujimoto, Yoshikazu Hirai, Tetsuo Kobayashi, and Osamu Tabata. "Alkali metal source tablet for vapor cells of atomic magnetometers." In 2015 Joint Conference of the IEEE International Frequency Control Symposium & the European Frequency and Time Forum (FCS). IEEE, 2015. http://dx.doi.org/10.1109/fcs.2015.7138817.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Atomic vapor cells' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography