Relevant bibliographies by topics / Au-Si eutectic

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Au-Si eutectic'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Au-Si eutectic"

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Yu, Xinxiang, Zhiguo Zhao, Dandan Shi, et al. "Erect Au Nanocones Drawn from Au Nano-Films by Nano-Size Au-Si Eutectic Clamping with High Adhesion to Substrates." Metals 10, no. 8 (2020): 1042. http://dx.doi.org/10.3390/met10081042.

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Erect Au nanocones with high adhesion to substrates are obtained by simply drawing from Au nano-films through Au-Si eutectic welding. Nanocones with diameters ranging from about 5 to 150 nm and length ranging from about 60 to 600 nm can be observed on both Au and Si substrate surfaces. Nano-scale Au-Si eutectics formed at the rough Au–silicon film interface under annealing at 450 °C and the subsequent cooling process facilitate the formation of nano-bonding points and draw Au nanocones from Au nano-film by mechanical separation. Erect Au nanocones adhered to Au or Si substrates shows higher li
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Kennedy, V. John, and G. Demortier. "Au–Si eutectic alloy formation by Si implantation in polycrystalline Au." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 171, no. 3 (2000): 325–31. http://dx.doi.org/10.1016/s0168-583x(00)00290-1.

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JOHN KENNEDY, V., G. TERWAGNE, and G. DEMORTIER. "A PROCEDURE FOR GOLD SOLDERING USING A Si-Au ALLOY PRODUCED BY Si IMPLANTATION IN Au." Modern Physics Letters B 15, no. 28n29 (2001): 1339–47. http://dx.doi.org/10.1142/s0217984901003251.

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Pure polycrystalline Au foils were rolled at room temperature to a thickness of 35 μm. Different doses of high energy Si ions (0.2-4.5 MeV) obtained from the 2 MV Tandetron accelerator at LARN were implanted in polycrystalline Au foils to produce a low melting point Au-Si alloy. Au-Si eutectic structure has been observed in the implanted Au foils after annealing at 400°C for 1 h. The Au-Si liquid phase diffused into the polycrystalline Au foil along the grain boundaries, which were flattened by the initial rolling procedure. The presence of this eutectic alloy was observed by Secondary Electro
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Zhirnov, V. V., L. Bormatova, E. I. Givargizov, et al. "Field emission properties of AuSi eutectic." Applied Surface Science 94-95 (March 1996): 144–47. http://dx.doi.org/10.1016/0169-4332(95)00362-2.

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Kwak, Junghyeok, Kaliannan Thiyagarajan, Anupam Giri, and Unyong Jeong. "Au-Assisted catalytic growth of Si2Te3 plates." Journal of Materials Chemistry C 7, no. 34 (2019): 10561–66. http://dx.doi.org/10.1039/c9tc03769a.

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We synthesized Si<sub>2</sub>Te<sub>3</sub> plates on Si substrates using Au particles as catalyst. The Au particles enabled the liquid phase reaction with Si and Te due to the eutectic alloy formation of Au–Si and Au–Te.
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Shoaf, S. E., and A. D. Feinerman. "Aligned Au–Si eutectic bonding of silicon structures." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12, no. 1 (1994): 19–22. http://dx.doi.org/10.1116/1.578882.

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Akiyama, Kensuke, Satoru Kaneko, Kazuya Yokomizo, and Masaru Itakura. "Iron disilicide formation by Au–Si eutectic reaction on Si substrate." Applied Surface Science 256, no. 4 (2009): 1244–48. http://dx.doi.org/10.1016/j.apsusc.2009.05.168.

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Amato, Giampiero, Alfio Battiato, Luca Croin, et al. "Micro-IBA analysis of Au/Si eutectic “crop-circles”." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 348 (April 2015): 183–86. http://dx.doi.org/10.1016/j.nimb.2014.10.004.

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Cros, A., and C. Canella. "The role of epitaxy in Au-Si eutectic bonding." Journal of Adhesion Science and Technology 5, no. 12 (1991): 1041–48. http://dx.doi.org/10.1163/156856191x00035.

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Satpati, B., P. V. Satyam, T. Som, and B. N. Dev. "Nanoscale ion-beam mixing in Au–Si and Ag–Si eutectic systems." Applied Physics A 79, no. 3 (2004): 447–51. http://dx.doi.org/10.1007/s00339-004-2703-1.

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Dissertations / Theses on the topic "Au-Si eutectic"

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Bushra, Sobia. "Investigation of Wafer Level Au-Si Eutectic Bonding of Shape Memory Alloy (SMA) with Silicon." Thesis, KTH, Mikrosystemteknik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-55483.

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The objective of this research work was to investigate the low temperature gold silicon eutectic bonding of SMA with silicon wafers. The research work was carried out to optimize a bond process with better yield and higher bond strength. The gold layer thickness, processing temperature, diffusion barrier, adhesive layer, and the removal of silicon oxide are the important parameters in determining a reliable and uniform bond. Based on the previous work on Au-Si eutectic bonding, 7 different Si substrates were prepared to investigate the effect of above mentioned parameters. Cantilevers with dif
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Moreira, de Sousa Micaela Filipa. "A comparative study of die attach strategies for use in harsh environments." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:b98427d6-cb9c-48dc-86a6-e364af5fcccf.

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Well-logging and aerospace applications require electronics capable of withstanding elevated temperature operation. A key element of high temperature packaging technology is the Si die attach material, and a comparative study of two die attach systems for use in harsh environment has been performed. Die bond sample packages, using commercial adhesives and an Au-Si eutectic solder, have been manufactured and were subsequently thermally exposed for various times at 250 and 300°C respectively. The adhesive die bond packages comprised a high temperature co-fired ceramic (HTCC) substrate with W, Ni
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Torunbalci, Mert Mustafa. "Wafer Level Vacuum Packaging Of Mems Sensors And Resonators." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613015/index.pdf.

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This thesis presents the development of wafer level vacuum packaging processes using Au-Si eutectic and glass frit bonding contributing to the improvement of packaging concepts for a variety of MEMS devices. In the first phase of this research, micromachined resonators and pirani vacuum gauges are designed for the evaluation of the vacuum package performance. These designs are verified using MATLAB and Coventorware finite element modeling tool. Designed resonators and pirani vacuum gauges and previously developed gyroscopes with lateral feedthroughs are fabricated with a newly developed Silico
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Gradin, Henrik. "Heterogeneous Integration of Shape Memory Alloysfor High-Performance Microvalves." Doctoral thesis, KTH, Mikrosystemteknik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-94088.

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This thesis presents methods for fabricating MicroElectroMechanical System (MEMS) actuators and high-flow gas microvalves using wafer-level integration of Shape Memory Alloys (SMAs) in the form of wires and sheets. The work output per volume of SMA actuators exceeds that of other microactuation mechanisms, such as electrostatic, magnetic and piezoelectric actuation, by more than an order of magnitude, making SMA actuators highly promising for applications requiring high forces and large displacements. The use of SMAs in MEMS has so far been limited, partially due to a lack of cost efficient an
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WU, MING-ZHU, and 吳明珠. "Optical properties of Si-Au eutectic composition." Thesis, 1989. http://ndltd.ncl.edu.tw/handle/75383914129953330580.

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Fu, Chuan-Hsu, and 傅傳旭. "A Study of Au-Si Eutectic Bonding with Embedded Barrier Layers and Plasma Treatment." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/95856556042884756936.

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碩士<br>中華大學<br>電機工程學系碩士班<br>92<br>The wafer bonding technology has been extensively utilized in the microelectromechanical system (MEMS) for the packaging of micro sensors and micro actuators. Wafer bonding is a convenient joining technology, which involves fusion bonding, anodic bonding, polymer bonding and eutectic bonding; these bonding technologies has been investigated and utilized for a long time. In this thesis, we focus on the properties of barrier layers between gold and silicon surface with eutectic bonding technology. Three topics would be investigated in this thesis: firs
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Fong, Fang-Jui, and 馮芳瑞. "Influences of Nano-Indentation Depth and Heating Temperature on the Formation of Gold-Silicon (Au/Si) Eutectic Phase." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/46903734235156173578.

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碩士<br>國立成功大學<br>機械工程學系碩博士班<br>94<br>This study investigates the effect of the indentation depth on the nano-mechanical properties of Au/Si thin films. The effects of the indentation depth and the heating temperature on the formation of Au/Si eutectic phase are also evaluated. Using semi-conductor deposition procedures and a conventional lithography etching technique, a thin gold film with a thickness of 500nm is grown on a (100) silicon wafer. Four chips of dimensions 1.2mm × 2.5mm are extracted from the wafer for nano-indentation testing. For each chip, indentation is performed to depths of 3
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Book chapters on the topic "Au-Si eutectic"

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Wang, X., D. Zhang, J. Li, Z. You, and B. Cai. "Au-Si Eutectic Wafer Bonding Mechanism Analysis and a Intensity Model." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.575.

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Conference papers on the topic "Au-Si eutectic"

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Ye, Tianxiang, Zhen Song, Yuxin Du, and Zheyao Wang. "Reliability of Au-Si eutectic bonding." In 2014 15th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2014. http://dx.doi.org/10.1109/icept.2014.6922833.

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Ye, Tianxiang, Zhen Song, Yuxin Du, and Zheyao Wang. "Reliability of Au-Si eutectic bonding." In 2014 Joint IEEE International Symposium on the Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM). IEEE, 2014. http://dx.doi.org/10.1109/isaf.2014.6918042.

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Huang, Xian, Jun He, Li Zhang, Fang Yang, and Dacheng Zhang. "Evaluation of Au/a-Si eutectic wafer level bonding process." In 2014 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE, 2014. http://dx.doi.org/10.1109/nems.2014.6908874.

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Ruan, Yong, Dacheng Zhang, Zhenchuan Yang, Xiang Wang, and Xiaomei Yu. "Wafer lever packaging for gyroscope by Au/Si eutectic bonding." In Photonics Asia 2002, edited by Guofan Jin, John S. McKillop, and Kazuhiro Hane. SPIE, 2002. http://dx.doi.org/10.1117/12.483165.

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Mitchell, Jay S., Gholamhassan R. Lahiji, and Khalil Najafi. "Reliability and Characterization of Micro-Packages in a Wafer Level Au-Si Eutectic Vacuum Bonding Process." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73341.

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A Au-Si eutectic vacuum packaging process was evaluated using high sensitivity poly-Si Pirani vacuum sensors. Encapsulation of devices was achieved by bonding a silicon cap wafer to a device wafer using a Au-Si eutectic solder at above 390°C in a vacuum bonder. The Au-Si eutectic solder encircled the devices, providing an airtight seal. The Pirani gauges were encapsulated and tested over a period of several months in order to determine base pressures and leak/outgassing rates of the micro-cavities. Packaged devices without getters showed initial pressures from 2 to 12 Torr with initial leak/ou
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Huang, X., D. Q. Zhao, J. He, X. J. Fan, F. Yang, and D. C. Zhang. "Electrical interconnect in MEMS/NEMS devices by Au/a-Si eutectic reaction." In 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2013. http://dx.doi.org/10.1109/nano.2013.6721023.

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Ishida, Tadashi, Laurent Jalabert, and Hiroyuki Fujita. "In-situ observation of formation of eutectic structure between Au and Si." In 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). IEEE, 2012. http://dx.doi.org/10.1109/ltb-3d.2012.6238070.

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Peng, Luohan, and Hong Liang. "Nano Wear of Noble Metals Against Silicon." In ASME/STLE 2007 International Joint Tribology Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ijtc2007-44227.

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We study the wear behavior of noble metals against a semiconductor substrate within a highly focused area. The nano-wear was generated on the tip of an atomic force microscope (AFM). The substrate is single crystal silicon. AFM tips were coated with noble metals, gold and silver, so that no complication of oxidation was introduced. The Au-Si and Ag-Si are two eutectic systems. The Au and Si atoms are more compatible compared with that of the Ag and Si system. During nano-wear experiments, the Au or Ag coated AFM tip slid against Si substrate. It was found that the Au tip showed adhesive wear b
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Deka, Anindita, Pintu Barman, Mrinmay K. Mukhopadhyay, and S. R. Bhattacharyya. "Tuning of gold nanoparticles on planar and ion-sputtered rippled Si surface above Au-Si eutectic temperature." In DAE SOLID STATE PHYSICS SYMPOSIUM 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0016662.

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Mencinger, N. P., M. P. Carthy, and R. C. McDonald. "Use of Wetting Angle Measurements in Reliability Evaluations of Au-Si Eutectic Die Attach." In 23rd International Reliability Physics Symposium. IEEE, 1985. http://dx.doi.org/10.1109/irps.1985.362094.

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