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Journal articles on the topic 'Au-Si eutectic'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Yu, Xinxiang, Zhiguo Zhao, Dandan Shi, et al. "Erect Au Nanocones Drawn from Au Nano-Films by Nano-Size Au-Si Eutectic Clamping with High Adhesion to Substrates." Metals 10, no. 8 (2020): 1042. http://dx.doi.org/10.3390/met10081042.

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Erect Au nanocones with high adhesion to substrates are obtained by simply drawing from Au nano-films through Au-Si eutectic welding. Nanocones with diameters ranging from about 5 to 150 nm and length ranging from about 60 to 600 nm can be observed on both Au and Si substrate surfaces. Nano-scale Au-Si eutectics formed at the rough Au–silicon film interface under annealing at 450 °C and the subsequent cooling process facilitate the formation of nano-bonding points and draw Au nanocones from Au nano-film by mechanical separation. Erect Au nanocones adhered to Au or Si substrates shows higher li

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2

Kennedy, V. John, and G. Demortier. "Au–Si eutectic alloy formation by Si implantation in polycrystalline Au." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 171, no. 3 (2000): 325–31. http://dx.doi.org/10.1016/s0168-583x(00)00290-1.

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3

JOHN KENNEDY, V., G. TERWAGNE, and G. DEMORTIER. "A PROCEDURE FOR GOLD SOLDERING USING A Si-Au ALLOY PRODUCED BY Si IMPLANTATION IN Au." Modern Physics Letters B 15, no. 28n29 (2001): 1339–47. http://dx.doi.org/10.1142/s0217984901003251.

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Pure polycrystalline Au foils were rolled at room temperature to a thickness of 35 μm. Different doses of high energy Si ions (0.2-4.5 MeV) obtained from the 2 MV Tandetron accelerator at LARN were implanted in polycrystalline Au foils to produce a low melting point Au-Si alloy. Au-Si eutectic structure has been observed in the implanted Au foils after annealing at 400°C for 1 h. The Au-Si liquid phase diffused into the polycrystalline Au foil along the grain boundaries, which were flattened by the initial rolling procedure. The presence of this eutectic alloy was observed by Secondary Electro

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4

Zhirnov, V. V., L. Bormatova, E. I. Givargizov, et al. "Field emission properties of AuSi eutectic." Applied Surface Science 94-95 (March 1996): 144–47. http://dx.doi.org/10.1016/0169-4332(95)00362-2.

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5

Kwak, Junghyeok, Kaliannan Thiyagarajan, Anupam Giri, and Unyong Jeong. "Au-Assisted catalytic growth of Si2Te3 plates." Journal of Materials Chemistry C 7, no. 34 (2019): 10561–66. http://dx.doi.org/10.1039/c9tc03769a.

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We synthesized Si<sub>2</sub>Te<sub>3</sub> plates on Si substrates using Au particles as catalyst. The Au particles enabled the liquid phase reaction with Si and Te due to the eutectic alloy formation of Au–Si and Au–Te.

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6

Shoaf, S. E., and A. D. Feinerman. "Aligned Au–Si eutectic bonding of silicon structures." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12, no. 1 (1994): 19–22. http://dx.doi.org/10.1116/1.578882.

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7

Akiyama, Kensuke, Satoru Kaneko, Kazuya Yokomizo, and Masaru Itakura. "Iron disilicide formation by Au–Si eutectic reaction on Si substrate." Applied Surface Science 256, no. 4 (2009): 1244–48. http://dx.doi.org/10.1016/j.apsusc.2009.05.168.

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8

Amato, Giampiero, Alfio Battiato, Luca Croin, et al. "Micro-IBA analysis of Au/Si eutectic “crop-circles”." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 348 (April 2015): 183–86. http://dx.doi.org/10.1016/j.nimb.2014.10.004.

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9

Cros, A., and C. Canella. "The role of epitaxy in Au-Si eutectic bonding." Journal of Adhesion Science and Technology 5, no. 12 (1991): 1041–48. http://dx.doi.org/10.1163/156856191x00035.

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10

Satpati, B., P. V. Satyam, T. Som, and B. N. Dev. "Nanoscale ion-beam mixing in Au–Si and Ag–Si eutectic systems." Applied Physics A 79, no. 3 (2004): 447–51. http://dx.doi.org/10.1007/s00339-004-2703-1.

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11

Wang, X., D. C. Zhang, J. Li, Z. You, and B. Cai. "Au-Si Eutectic Wafer Bonding Mechanism Analysis and a Intensity Model." Solid State Phenomena 121-123 (March 2007): 575–78. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.575.

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Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.

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12

Wu, Jing, Shi Xing Jia, Yun Xiang Wang, and Jian Zhu. "Study on the Gold-Gold Thermocompression Bonding for Wafer-Level Packaging." Advanced Materials Research 60-61 (January 2009): 325–29. http://dx.doi.org/10.4028/www.scientific.net/amr.60-61.325.

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The study is performed to implement the Gold-Gold thermocompression bonding for the wafer-level packaging of MEMS chips. Numerous experimental attempts have been carried out to select the metal film adhesive to avoid the Au-Si melt together and optimize bonding processes to intensify the Au-Au eutectic bonding. Finally the results display that the eutectic bonding of the gold-gold are arrived as electrical as well as mechanical interconnection of the MEMS structure and as seal as well as bonding intension.

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13

Li, Dongling, Zhengguo Shang, Yin She, and Zhiyu Wen. "Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers." Micromachines 8, no. 5 (2017): 158. http://dx.doi.org/10.3390/mi8050158.

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14

Takeda, S., H. Fujii, Y. Kawakita, et al. "Structure of liquid Au–Si alloys around the eutectic region." Materials Science and Engineering: A 449-451 (March 2007): 590–93. http://dx.doi.org/10.1016/j.msea.2006.02.348.

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15

Lani, Sebastien, Alain Bosseboeuf, Olivier Garel, et al. "Multilayer Au-Si Eutectic Wafer Bonding with Microstructured Sealing Rings." ECS Transactions 16, no. 8 (2019): 147–54. http://dx.doi.org/10.1149/1.2982864.

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16

Takeda, S., H. Fujii, Y. Kawakita, et al. "Structure of eutectic alloys of Au with Si and Ge." Journal of Alloys and Compounds 452, no. 1 (2008): 149–53. http://dx.doi.org/10.1016/j.jallcom.2007.02.132.

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17

Lin, Jin-Shyong, Chien-Chon Chen, Eric Wei-Guang Diau, and Tzeng-Feng Liu. "Fabrication and characterization of eutectic gold–silicon (Au–Si) nanowires." Journal of Materials Processing Technology 206, no. 1-3 (2008): 425–30. http://dx.doi.org/10.1016/j.jmatprotec.2007.12.069.

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18

Kim, M. J., R. W. Carpenter, and J. C. Barry. "High-resolution EM study of the gold silicon interface reaction." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 406–7. http://dx.doi.org/10.1017/s0424820100143626.

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Gold occupies a key role in silicon solid state device technology, for contacts and carrier lifetime control. Gold is added to silicon by evaporation onto HF cleaned Si wafers, followed by annealing at high temperature. The Au-Si binary system is a simple eutectic, with very limited terminal solid solubility and no reported stable intermediate compounds. When Si wafers are HF cleaned and exposed to air, even for very short times, a native oxide film a few nm thickness will form, and be interposed between the Si substrate and the evaporated Au layer. The effect of this film on the interface rea

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19

Fujii, Hiroyuki, Shuta Tahara, Yasuhiko Kato, et al. "Structural properties of liquid Au–Si and Au–Ge alloys with deep eutectic region." Journal of Non-Crystalline Solids 353, no. 18-21 (2007): 2094–98. http://dx.doi.org/10.1016/j.jnoncrysol.2007.02.031.

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20

Chidambaram, Vivek, Ho Beng Yeung, and Gao Shan. "Reliability of Au-Ge and Au-Si Eutectic Solder Alloys for High-Temperature Electronics." Journal of Electronic Materials 41, no. 8 (2012): 2107–17. http://dx.doi.org/10.1007/s11664-012-2114-6.

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21

Akiyama, Kensuke, Yuu Motoizumi, Tetsuya Okuda, Hiroshi Funakubo, Hiroshi Irie, and Yoshihisa Matsumoto. "Synthesis and Photocatalytic Properties of Iron Disilicide/SiC Composite Powder." MRS Advances 2, no. 8 (2017): 471–76. http://dx.doi.org/10.1557/adv.2017.221.

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ABSTRACTSemiconducting iron disilicide (β-FeSi2) island grains of 50-100 nanometers in size were formed on the surface of Au-coated 3C-SiC powder by metal-organic chemical vapor deposition. On the surface of 3C-SiC powder, the Au-Si liquidus phase was obtained via a Au-Si eutectic reaction, which contributed to the formation of the β-FeSi2 island grains. This β-FeSi2/SiC composite powder could evolve hydrogen (H2) from methyl-alcohol aqueous solution under irradiation of visible light with wavelengths of 420-650 nm.

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22

Wolffenbuttel, R. F. "Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bond." Sensors and Actuators A: Physical 62, no. 1-3 (1997): 680–86. http://dx.doi.org/10.1016/s0924-4247(97)01550-1.

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23

Henry, Michael David, and Catalina R. Ahlers. "Platinum Diffusion Barrier Breakdown in a-Si/Au Eutectic Wafer Bonding." IEEE Transactions on Components, Packaging and Manufacturing Technology 3, no. 6 (2013): 899–903. http://dx.doi.org/10.1109/tcpmt.2013.2239363.

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24

Zhao, Zhihuan, Guanghao Gong, Mingming Jiang, et al. "Effect of Temperature on the Chip Soldering Process with AuGa0.03 Alloy Solder." Crystals 10, no. 2 (2020): 59. http://dx.doi.org/10.3390/cryst10020059.

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In this study, soldering is conducted between a chip and a CLCC-3 shell base with a sheet-like AuGa0.03 alloy solder as the encapsulating material. X-ray images of chip soldering samples, XRD diffraction analysis of the joints, SEM images reflecting the microstructures of the joints, and EDS of the cross sections of the chip soldering samples show that with gradually increasing soldering temperature, the phase composition is not affected, and all the joint structures are an Au + Si eutectic structure; the Au–Si eutectic reaction occurs during the soldering process. No deposition of meta-stable

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25

Ressel, B., S. Heun, T. Schmidt, and K. C. Prince. "XPEEM Study of Liquid Au-Si Droplets on Si(111) near to the Eutectic Point." Defect and Diffusion Forum 183-185 (August 2000): 181–88. http://dx.doi.org/10.4028/www.scientific.net/ddf.183-185.181.

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26

Berger, Nele, Ayoub Laghrissi, Yee Yan Tay, et al. "Formation of Si Nanorods and Discrete Nanophases by Axial Diffusion of Si from Substrate into Au and AuPt Nanoalloy Nanorods." Nanomaterials 10, no. 1 (2019): 68. http://dx.doi.org/10.3390/nano10010068.

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Interdiffusion between Si substrate and nanorod arrays of Au, Pt, and AuPt nanoalloys is investigated at temperatures lower than the AuSi eutectic temperature. When the nanorod is pure Au, Si diffusion from the substrate is very rapid. Au atoms are completely replaced by Si, converting the nanostructure into one of Si nanorod arrays. Au is diffused out to the substrate. The Au nanorod arrays on Si are unstable. When the nanorod is pure Pt, however, no diffusion of Si into the nanorod or any silicide formation is observed. The Pt nanorods are stable on Si substrate. When the nanorods are an all

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27

Movchan, O. V., and K. O. Chornoivanenko. "In situ Composites: A Review." Uspehi Fiziki Metallov 22, no. 1 (2021): 58–77. http://dx.doi.org/10.15407/ufm.22.01.058.

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The review of the works on the fabrication-technology studies, patterns of structure formation, and properties of in situ composites is presented. The main advantage of in situ (natural) composites is the thermodynamic stability of their composition and the coherence (conjugation) of the lattices of the contacting phases. All these ones provide the composite with a high level of the physical and mechanical properties. As shown, composite materials of this type are formed in the process of directed phase transformations, such as eutectic crystallization, eutectoid decomposition, etc., caused by

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28

WANG, XIANG, WEI WANG, XUEFENG HE, and DACHENG ZHANG. "AN INTENSITY TESTING MODEL AND EXAMINATION OF GOLD–SILICON WAFER BONDING." International Journal of Nanoscience 05, no. 06 (2006): 827–33. http://dx.doi.org/10.1142/s0219581x06005224.

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A bonding intensity testing method, called Press-arm model, has been successfully designed and verified by Ansys finite element analysis. The gold–silicon bonding strength [σ2] = 238 MPa has been measured by the Press-arm model. We can probably determine the [σ2] value and compare the bonding strengths by the Press-arm length l. The model can also be used in other type of bonding. The bond region is sufficiently stronger than the silicon substrate. A substrate- Si/Cr/Au/poly - Si/Au and a silicon substrate is bonded at 380–450°C. It occurs as soon as the dissolving of the SiO 2 layer by silici

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29

Li, Yi Gui, Jian Sun, Jing Quan Liu, et al. "Evaluation of Properties of Lapped PZT Ceramics and Silicon Cantilever Based on Eutectic Bonding and Dicing Process." Materials Science Forum 663-665 (November 2010): 999–1003. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.999.

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Piezoelectric sensor can produce voltage when deflected (function as an energy harvester) while piezoelectric actuator can deflect when a voltage is applied. Different device applications have different requirements on the thickness and in-plane geometry of the Lead Zirconate Titanate(PZT) piezoelectric layers and thus have their own processing difficulties. In this paper, PZT-Au-Si cantilever is fabricated by eutectic bonding and dicing process.The properties of lapped PZT ceramics and silicon cantilever is also evaluated. The PZT-Au-Si cantilever applications for both piezoelectric actuators

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30

Bow, J. S., Y. C. Hung, M. J. Kim, et al. "High-resolution TEM and AEM study in (Au, Tin) thin film on (100) silicon." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 554–55. http://dx.doi.org/10.1017/s0424820100139147.

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The cross-sectional microstructure of a (Au, TiN) thin film deposited on a (100) Si substrate without further heat treatment was studied by CTEM, HRTEM, and AEM. HTREM was performed in a Topcon 002B microscope with interpretable resolution limit of 0.18 nm, and high spatial AEM was done in a Philips 400ST field emission gun microscope at 100 kV using a Gatan 666 parallel-detection electron energy loss spectrometer. Cross-section specimens of the interface were prepared by traditional polishing and ion milling. Temperatures used in the whole process of TEM specimen preparation were below 100°C

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31

Errong Jing, Bin Xiong, and Yuelin Wang. "The Bond Strength of Au/Si Eutectic Bonding Studied by IR Microscope." IEEE Transactions on Electronics Packaging Manufacturing 33, no. 1 (2010): 31–37. http://dx.doi.org/10.1109/tepm.2009.2035307.

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32

Gapska, Anna, Marcin Łapiński, Paweł Syty, Wojciech Sadowski, Józef Eugeniusz Sienkiewicz, and Barbara Kościelska. "Au–Si plasmonic platforms: synthesis, structure and FDTD simulations." Beilstein Journal of Nanotechnology 9 (September 28, 2018): 2599–608. http://dx.doi.org/10.3762/bjnano.9.241.

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Plasmonic platforms based on Au nanostructures have been successfully synthesized by directional solidification of a eutectic from Au and the substrate. In order to determine homogeneous shape and space distribution, the influence of annealing conditions and the initial thickness of the Au film on the nanostructures was analyzed. For the surface morphology studies, SEM and AFM measurements were performed. The structure of platforms was investigated using XRD and XPS methods. Structural investigations confirmed, that nanostructures consist of metallic Au, growing along the [111] direction. The

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33

Thipayarat, Kamolchanok, A. Lewan, E. Nisaratanaporn, and B. Lohwongwatana. "Thermodynamic Solidification Path Assessment and Microstructural Comparison of Deep Eutectic Au-Cu-Si System." Applied Mechanics and Materials 548-549 (April 2014): 259–63. http://dx.doi.org/10.4028/www.scientific.net/amm.548-549.259.

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Particularly in karat gold alloys in jewelry applications, many alloy formulations include a small amount of silicon for filigree castings and brightening effect [1]. On the other hand, some alloy manufacturers stayed away from silicon or set a maximum amount of silicon to avoid embrittlement [1-3]. However recent development of gold-based bulk metallic glass involved a large addition of silicon (16.3 at% Si) in the alloy formulation [4-6]. No silicon segregation had been observed in large ingots that were cooled at 100 K/s and above. In the current study of Au55Cu25Si20 alloy, extra silicon h

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34

Lani, Sebastien, Michael Canonica, Dara Bayat, Caglar Ataman, Wilfried Noell, and Nico De Rooij. "3D Assembly Using Au-Si Eutectic and Au-Au Thermocompression Wafer Level Bonding for M(O)EMS Device Fabrication." ECS Transactions 33, no. 4 (2019): 37–46. http://dx.doi.org/10.1149/1.3483492.

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35

Kato, Hiroshi. "Eutectic Reactions and Textures of Au–Si Alloy Films on Single-Crystal Silicon." Japanese Journal of Applied Physics 28, Part 1, No. 6 (1989): 953–56. http://dx.doi.org/10.1143/jjap.28.953.

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36

Demortier, G., and S. Mathot. "3D characterization of the eutectic Au-Si alloy by using a nuclear microprobe." Scanning 13, no. 5 (1991): 350–56. http://dx.doi.org/10.1002/sca.4950130504.

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37

Liang, Hengmao, Mifeng Liu, Song Liu, Dehui Xu, and Bin Xiong. "The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication." Journal of Micromechanics and Microengineering 28, no. 1 (2017): 015005. http://dx.doi.org/10.1088/1361-6439/aa99fe.

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38

Weyrich, Nico, and Christian Leinenbach. "Low temperature TLP bonding of Al2O3–ceramics using eutectic Au–(Ge, Si) alloys." Journal of Materials Science 48, no. 20 (2013): 7115–24. http://dx.doi.org/10.1007/s10853-013-7526-z.

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39

Friedman, Hilla, Ze'ev Porat, Itzhak Halevy, and Shimon Reich. "Formation of metal microspheres by ultrasonic cavitation." Journal of Materials Research 25, no. 4 (2010): 633–36. http://dx.doi.org/10.1557/jmr.2010.0083.

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A new physical method is described for the preparation of metal microspheres by ultrasonic cavitation of low-melting point metals (<380 °C) immersed in hot silicone oil. The ultrasonic radiation causes dispersion of the molten metals into spheres, which solidify rapidly on cooling. This method is illustrated for the synthesis of Pb and Au–Si eutectic alloy.

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40

Sousa, M. F., S. Riches, C. Johnston, and P. S. Grant. "Optimizing the performance of the Au-Si system for high temperature die attach applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000068–76. http://dx.doi.org/10.4071/hiten-paper5-msousa.

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The operation of electronic packages under exceptionally harsh environments presents a significant challenge for the microelectronics industry, for example, in down-hole, well-logging and turbo-machinery applications. High temperature Au based solders are one potential candidate for die attachment for harsh environments and is already used in limited cases. For Au-Si die bonding, some of the Si is provided by diffusion from the Si die itself. Therefore, the interfacial reaction between the Si and Au-Si thin foil solder preform is a key factor in the control of the die bonding process. Unfortun

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41

Puglisi, Rosaria A., Corrado Bongiorno, Giovanni Borgh, et al. "Study on the Physico-Chemical Properties of the Si Nanowires Surface." Nanomaterials 9, no. 6 (2019): 818. http://dx.doi.org/10.3390/nano9060818.

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Silicon nanowires (Si-NWs) have been extensively studied for their numerous applications in nano-electronics. The most common method for their synthesis is the vapor–liquid–solid growth, using gold as catalyst. After the growth, the metal remains on the Si-NW tip, representing an important issue, because Au creates deep traps in the Si band gap that deteriorate the device performance. The methods proposed so far to remove Au offer low efficiency, strongly oxidize the Si-NW sidewalls, or produce structural damage. A physical and chemical characterization of the as-grown Si-NWs is presented. A t

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42

Bokhonov, B., and M. Korchagin. "In situ investigation of stage of the formation of eutectic alloys in Si–Au and Si–Al systems." Journal of Alloys and Compounds 312, no. 1-2 (2000): 238–50. http://dx.doi.org/10.1016/s0925-8388(00)01173-7.

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43

Lee, Kang Ryeol, Kunnyun Kim, Hyo-Derk Park, Yong Kook Kim, Seung-Woo Choi, and Woo-Beom Choi. "Fabrication of capacitive absolute pressure sensor using Si-Au eutectic bonding in SOI wafer." Journal of Physics: Conference Series 34 (April 1, 2006): 393–98. http://dx.doi.org/10.1088/1742-6596/34/1/064.

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44

Kurtuldu, Güven, and Fabio Krogh. "Insight into crystallization paths in Au–Si eutectic alloy through the energy-temperature diagram." Materialia 16 (May 2021): 101093. http://dx.doi.org/10.1016/j.mtla.2021.101093.

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45

Gradin, Henrik, Stefan Braun, Göran Stemme, and Wouter van der Wijngaart. "Localized removal of the Au–Si eutectic bonding layer for the selective release of microstructures." Journal of Micromechanics and Microengineering 19, no. 10 (2009): 105014. http://dx.doi.org/10.1088/0960-1317/19/10/105014.

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46

Gradin, Henrik, Sobia Bushra, Stefan Braun, Göran Stemme, and Wouter van der Wijngaart. "Wafer-level integration of NiTi shape memory alloy on silicon using Au–Si eutectic bonding." Journal of Micromechanics and Microengineering 23, no. 1 (2012): 015008. http://dx.doi.org/10.1088/0960-1317/23/1/015008.

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47

Vaidya, S. N., and D. K. Joshi. "The effect of pressure on the eutectic temperature in Au-Si and Ni-Ge systems." Journal of the Less Common Metals 116, no. 2 (1986): L1—L4. http://dx.doi.org/10.1016/0022-5088(86)90673-9.

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48

Nzulu, Gabriel K., Babak Bakhit, Hans Högberg, Lars Hultman, and Martin Magnuson. "Elucidating Pathfinding Elements from the Kubi Gold Mine in Ghana." Minerals 11, no. 9 (2021): 912. http://dx.doi.org/10.3390/min11090912.

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X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX) are applied to investigate the properties of fine-grained concentrates on artisanal, small-scale gold mining samples from the Kubi Gold Project of the Asante Gold Corporation near Dunwka-on-Offin in the Central Region of Ghana. Both techniques show that the Au-containing residual sediments are dominated by the host elements Fe, Ag, Al, N, O, Si, Hg, and Ti that either form alloys with gold or with inherent elements in the sediments. For comparison, a bulk nugget sample mainly consisting of Au forms an electru

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49

Kishan Singh, Ch, T. Tah, K. K. Madapu, K. Saravanan, S. Ilango, and S. Dash. "Au induced crystallization and layer exchange in a-Si/Au thin film on glass below and above the eutectic temperature." Journal of Non-Crystalline Solids 460 (March 2017): 130–35. http://dx.doi.org/10.1016/j.jnoncrysol.2017.01.029.

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50

Selvaraj, Shanthi, Faizan Khan, Shunsuke Nishino, et al. "Influence of Au on Ge Crystallization and Its Thermoelectric Properties in a Au-induced Ge Crystallization Technique." JOURNAL OF ADVANCES IN PHYSICS 14, no. 2 (2018): 5460–66. http://dx.doi.org/10.24297/jap.v14i2.7421.

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Abstract:

Poly-crystalline Ge (pc-Ge) thin films were prepared on a SiO2/Si substrate using Au-induced crystallization (GIC) of amorphous Ge (a-Ge) with an annealing temperature around the eutectic point of Au-Ge alloy system (361ÂºC) in order to shorten the annealing time. Bilayer thin films of Au (20 nm)/a-Ge (100 nm) were used as a precursor material and annealed at 300, 400, and 500 ÂºC for 60 min, which successfully leads to the formation of pc-Ge layers. Characterizing the prepared Ge layers, the crystallographic properties indicated that the metal catalyst Au plays a notable role of enhancing bot

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