Relevant bibliographies by topics / Avalanche photodiodes. Photodiodes

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Avalanche photodiodes. Photodiodes'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Avalanche photodiodes. Photodiodes"

1

Rockwell, Ann-Katheryn, Yuan Yuan, Andrew H. Jones, Stephen D. March, Seth R. Bank, and Joe C. Campbell. "Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes." IEEE Photonics Technology Letters 30, no. 11 (2018): 1048–51. http://dx.doi.org/10.1109/lpt.2018.2826999.

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Carrano, J. C., D. J. H. Lambert, C. J. Eiting, et al. "GaN avalanche photodiodes." Applied Physics Letters 76, no. 7 (2000): 924–26. http://dx.doi.org/10.1063/1.125631.

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Tsuji, Masayoshi, Isao Watanabe, Kikuo Makita, and Kenko Taguchi. "InAlGaAs Staircase Avalanche Photodiodes." Japanese Journal of Applied Physics 33, Part 2, No. 1A (1994): L32—L34. http://dx.doi.org/10.1143/jjap.33.l32.

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4

Choa, F. S., and P. L. Liu. "Cascaded homojunction avalanche photodiodes." Fiber and Integrated Optics 7, no. 1 (1988): 1–15. http://dx.doi.org/10.1080/01468038808219347.

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Hasnain, G., W. G. Bi, S. Song, et al. "Buried-mesa avalanche photodiodes." IEEE Journal of Quantum Electronics 34, no. 12 (1998): 2321–26. http://dx.doi.org/10.1109/3.736100.

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Zhou, Qiugui, Dion C. McIntosh, Zhiwen Lu, et al. "GaN/SiC avalanche photodiodes." Applied Physics Letters 99, no. 13 (2011): 131110. http://dx.doi.org/10.1063/1.3636412.

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Kinch, M. A., J. D. Beck, C. F. Wan, F. Ma, and J. Campbell. "HgCdTe electron avalanche photodiodes." Journal of Electronic Materials 33, no. 6 (2004): 630–39. http://dx.doi.org/10.1007/s11664-004-0058-1.

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Fedorenko, A. V. "Spectral photosensitivity of diffused Ge-p–i–n photodiods." Технология и конструирование в электронной аппаратуре, no. 3-4 (2020): 17–23. http://dx.doi.org/10.15222/tkea2020.3-4.17.

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Laser rangefinders are widely used to measure distances for various civil and military purposes, as well as in rocket and space technology. The optical channel of such rangefinders uses high-speed p–i–n, or avalanche, photodiodes based on Si, Ge or InGaAs depending on the operating wavelength of the rangefinder in question. The paper describes a manufacturing process for high-speed Ge-p–i–n photodiodes for laser rangefinders using the diffusion method. The passivation layer is made of ZnSe, which is a new solution for this type of photodiodes. The existing theoretical models are used to study
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Gao Yanlei, 高艳磊, 芦小刚 Lu Xiaogang, 白金海 Bai Jinhai, et al. "Avalanche Luminescence Crosstalk between Avalanche Photodiodes." Acta Optica Sinica 35, no. 7 (2015): 0727004. http://dx.doi.org/10.3788/aos201535.0727004.

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Ong, D. S., G. J. Rees, and J. P. R. David. "Avalanche speed in thin avalanche photodiodes." Journal of Applied Physics 93, no. 7 (2003): 4232–39. http://dx.doi.org/10.1063/1.1557785.

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Dissertations / Theses on the topic "Avalanche photodiodes. Photodiodes"

1

Butera, Silvia. "InAs avalanche photodiodes." Thesis, Heriot-Watt University, 2015. http://hdl.handle.net/10399/3043.

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The ability to efficiently detect low-level light in the infrared above wavelengths of 1.7 μm is becoming increasingly important for many applications such as gas sensing, defence/geoscience ranging and clinical thermography. The III-V narrow gap semiconductor InAs, with a bandgap of 0.36 eV, is well known for its use as a conventional photodiode. The aim of this thesis was to design, build and test InAs devices for use as reverse biased avalanche photodiodes. In order to fabricate a lownoise detector, a passivation study was conducted. For the first time we report the achievement of high qual
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Ong, Daniel Swee Guan. "The type-II/InA1As avalanche photodiode and optimisation of avalanche photodiodes in receiver systems." Thesis, University of Sheffield, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554392.

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Calculations based on a rigorous analytical model arc carried out to optimise the width of the avalanche region, w, in high-speed direct-detection avalanche photodiode- . based optical receivers. The model includes the effects of intersymbol interference (ISI), tunnelling current, avalanche noise, as well as dead space. The sensitivity of InP, InA1As and InAs avalanche photodiodes (APDs) were investigated. The interplay among the factors controlling the optimum sensitivity is confirmed. Results show that for a given transmission speed, as the device width decreases below the optimum value, inc
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Xie, Shiyu. "Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes." Thesis, University of Sheffield, 2012. http://etheses.whiterose.ac.uk/2267/.

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Avalanche photodiodes (APDs) can provide higher sensitivity, when the noise is dominated by electronic noise, than conventional p-i-n photodiodes due to its internal gain achieved via the impact ionisation process. High speed and high sensitivity photodetectors operating at the wavelength of 1.55 m for optical communication have been intensely research due to the ever increasing internet traffic, particularly in the long-haul communication systems. In this dissertation high speed InGaAs p-i-n photodiodes, InGaAs/InAlAs separate absorption and multiplication (SAM) APDs are designed and charact
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Abautret, Johan. "Conception, fabrication et caractérisation de photodiodes à avalanche InSb." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20232.

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Cette thèse, réalisée à l'IES en partenariat avec la société SOFRADIR et le CEA-LETI, avait pour objectif d'évaluer les potentialités du matériau InSb pour la réalisation de photodiodes à avalanche (APD) moyen infrarouge (MWIR). Par l'étude du design (simulations TCAD), de la fabrication technologique en configuration MESA (voie humide, voie sèche, passivation), puis par la caractérisation électrique des dispositifs, ce travail de thèse s'est attaché à explorer l'ensemble des éléments nécessaires au développement de cette filière de photodétecteurs. Les photodiodes InSb fabriquées par épitaxie
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Tan, Lionel Juen Jin. "Telecommunication wavelength InP based avalanche photodiodes." Thesis, University of Sheffield, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489074.

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A systematic study of the avalanche multiplication behaviour in InP has been performed on a series of diodes with avalanche region widths, w, ranging from 2.50 to 0.08 μm, covering a wide electric field range from 180 to 850kV/cm. The local model for impact ionisation is found to increasingly overestimate the multiplication at low electric fields as w decreases due to the presence of dead space. The dead space is also found to decrease the excess noise. An excess noise factor of F = 3.5 at multiplication factor M= 10 was measured, the lowest value reported so far in InP.
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Hambleton, Paul Jeffrey. "Performance modelling of thin avalanche photodiodes." Thesis, University of Sheffield, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.289682.

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Tapan, Ilhan. "Avalanche photodiodes as proportional photon detectors." Thesis, University of Bristol, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389143.

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Auckloo, Sheik Mamode Akeel. "Analog frontend circuits for avalanche photodiodes." Thesis, University of Sheffield, 2016. http://etheses.whiterose.ac.uk/17129/.

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The aims of this work is to design low noise electronics for optical sensing and X‐ray spectroscopy using Sheffield‐grown Avalanche photodiodes(APD). A transimpedance amplifier(TIA) for a 2.0 μm LIDAR system is designed and tested as part of a project funded by ESA. Numerical analysis is provided for the TIA in addition to SPICE and experimental analysis. Characterisation of the TIA shows that a noise equivalent power of less than 100 fW/√Hz can be achieved with an optimised InAs APD. Preliminary results of a TIA‐InAs module at 2.0 μm is presented. A low noise charge sensitive preamplifier(CSP
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Cheong, Jeng Shiuh. "Design and characterisation of AlInP avalanche photodiodes." Thesis, University of Sheffield, 2016. http://etheses.whiterose.ac.uk/15386/.

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The aim of this work is to design a highly sensitive AlInP APD operating at ~ 480 nm for underwater wireless communication systems. Visible light is potentially an alternative to acoustic waves since it can propagate through seawater without much attenuation over short distances while having a high bandwidth. The optical properties of AlInP were studied by measuring the spectral response of AlInP PINs with various cladding and depletion thicknesses. In addition to the minority carrier diffusion lengths, absorption coefficients over a wide dynamic range from 106 to 100 cm-1 were extracted from
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Virot, Léopold. "Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse." Thesis, Paris 11, 2014. http://www.theses.fr/2014PA112414/document.

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Afin d’adresser la problématique liée aux limitations des interconnections métalliques en termes de débits notamment, la photonique Si s’est imposée comme une technologie de choix. Un des composants de base des circuits photonique Si est le photodétecteur : Il permet de convertir un signal optique en signal électrique. Les photodétecteurs à base de Ge sur Si ont montré leur potentiel et offrent la meilleure alternative aux photodétecteurs III-V, pour une intégration dans les circuits photoniques Si.Dans ce contexte, les photodiodes à base de Ge su Si ont été étudiées. L’optimisation des photod
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Books on the topic "Avalanche photodiodes. Photodiodes"

1

Davies, Andrew Richard. Avalanche photodiodes in stellar spectroscopy. University of Birmingham, 1995.

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2

Meier, Hektor. Design, characterization and simulation of avalanche photodiodes. Hartung-Gorre Verlag, 2011.

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3

Dolgos, Denis. Full-band Monte Carlo simulation of single photon avalanche diodes. Hartung-Gorre Verlag, 2012.

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4

Rasmussen, A. L. Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers. U.S. Dept. of Commerce, National Institute of Standards and Technology, 1989.

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Rasmussen, A. L. Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers. U.S. Dept. of Commerce, National Institute of Standards and Technology, 1989.

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Rasmussen, A. L. Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers. U.S. Dept. of Commerce, National Institute of Standards and Technology, 1989.

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Rasmussen, A. L. Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers. U.S. Dept. of Commerce, National Institute of Standards and Technology, 1989.

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Rasmussen, A. L. Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers. U.S. Dept. of Commerce, National Institute of Standards and Technology, 1989.

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9

Huntington, Andrew S. InGaAs Avalanche Photodiodes for Ranging and Lidar. Elsevier Science & Technology, 2020.

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InGaAs Avalanche Photodiodes for Ranging and Lidar. Elsevier, 2020. http://dx.doi.org/10.1016/c2017-0-04776-6.

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Book chapters on the topic "Avalanche photodiodes. Photodiodes"

1

Razeghi, Manijeh. "Single-Photon Avalanche Photodiodes." In Technology of Quantum Devices. Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-1056-1_12.

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Baker, I., and M. Kinch. "HgCdTe Electron Avalanche Photodiodes (EAPDs)." In Mercury Cadmium Telluride. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470669464.ch21.

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Koster, A. "Avalanche Photodiodes for Optical Bistability." In Optical Information Technology. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78140-7_36.

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Gilmore, R. S., A. R. Duell, T. J. Llewellyn, R. J. Tapper, S. Nash, and K. Xyloparkiotis. "Avalanche Photodiodes (APD) as Proportional Devices." In Applications of Photonic Technology. Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-9247-8_88.

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Kobayashi, Masahiro, and Takao Kaneda. "Reliability Testing of Planar InGaAs Avalanche Photodiodes." In Semiconductor Device Reliability. Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_23.

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Kindt, W. J., and H. W. van Zeijl. "Fabrication Technology of Geiger Mode Avalanche Photodiodes." In Sensor Technology in the Netherlands: State of the Art. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5010-1_22.

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Jackson, J. C., B. Lane, A. Mathewson, and A. P. Morrison. "Simulation of Dark Count in Geiger Mode Avalanche Photodiodes." In Simulation of Semiconductor Processes and Devices 2001. Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_86.

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Bopp, S., F. Durst, R. Müller, A. Naqwi, C. Tropea, and H. Weber. "Small Laser-Doppler Anemometers Using Semiconductor Lasers and Avalanche Photodiodes." In Applications of Laser Anemometry to Fluid Mechanics. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83844-6_18.

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Loh, W. S., C. Mark Johnson, J. S. Ng, et al. "Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.339.

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Capasso, F. "Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche Photodiodes." In High-Speed Electronics. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_10.

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Conference papers on the topic "Avalanche photodiodes. Photodiodes"

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Ng, Jo Shien, and Chee Hing Tan. "AlGaAsSb Avalanche Photodiodes." In 2018 IEEE Photonics Conference (IPC). IEEE, 2018. http://dx.doi.org/10.1109/ipcon.2018.8527084.

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Kagawa, T. "Superlattice avalanche photodiodes." In Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting. IEEE, 1997. http://dx.doi.org/10.1109/leos.1997.630594.

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McClintock, Ryan, and Manijeh Razeghi. "Ultraviolet avalanche photodiodes." In SPIE Nanoscience + Engineering, edited by Manijeh Razeghi, Dorota S. Temple, and Gail J. Brown. SPIE, 2015. http://dx.doi.org/10.1117/12.2195387.

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Campbell, Joe, Xiangyi Guo, Han-din Liu, and Dion McIntosh. "SiC Avalanche Photodiodes." In 2006 IEEE LEOS Annual Meeting. IEEE, 2006. http://dx.doi.org/10.1109/leos.2006.279078.

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Campbell, Joe C., Han-Din Liu, Dion McIntosh, and Xiaogang Bai. "SiC avalanche photodiodes." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422434.

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White, Benjamin S., Ian C. Sandall, and Chee Hing Tan. "Planar InAs avalanche photodiodes." In 2015 IEEE Photonics Conference (IPC). IEEE, 2015. http://dx.doi.org/10.1109/ipcon.2015.7323571.

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Campbell, Joe C., and Seth Bank. "Digital Alloy Avalanche Photodiodes." In 2019 IEEE Photonics Conference (IPC). IEEE, 2019. http://dx.doi.org/10.1109/ipcon.2019.8908311.

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David, J. P. R. "Low noise avalanche photodiodes." In 2005 IEEE LEOS Annual Meeting. IEEE, 2005. http://dx.doi.org/10.1109/leos.2005.1548032.

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David, J. P. R. "Low noise avalanche photodiodes." In 2008 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2008. http://dx.doi.org/10.1109/smelec.2008.4770263.

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Campbell, Joe C. "Single Photon Avalanche Photodiodes." In Optical Fiber Communication Conference. OSA, 2009. http://dx.doi.org/10.1364/ofc.2009.owx1.

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Reports on the topic "Avalanche photodiodes. Photodiodes"

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Razeghi, Manijeh. III-Nitride Visible- and Solar-Blind Avalanche Photodiodes. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada483336.

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Fenker, H., T. Regan, J. Thomas, and M. Wright. Higher efficiency active quenching circuit for avalanche photodiodes. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/67491.

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Fenker, H., and J. Thomas. Studies of avalanche photodiodes for scintillating fibre tracking readout. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10131796.

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Foster, G. W., A. Ronzhin, and R. Rusack. Some tests of avalanche photodiodes produced by Advanced Photonix, Inc. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/88548.

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Fenker, H., K. Morgan, and T. Regan. Progress in the use of avalanche photodiodes for readout for calorimeters. Office of Scientific and Technical Information (OSTI), 1991. http://dx.doi.org/10.2172/6264399.

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Itzler, Mark. Low-Noise Avalanche Photodiodes for Midwave Infrared (2 to 5 um) Applications. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada437268.

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Sampath, Anand V., and Michael Wraback. Low-cost, High Performance Avalanche Photodiodes for Enabling High Sensitivity Bio-fluorescence Detection. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada559271.

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Holmes, Jr, and Archie L. InP Based Avalanche Photodiode Arrays for Mid Infrared Applications. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada482291.

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Rasmussen, A. L., P. A. Simpson, and A. A. Sanders. Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers. National Institute of Standards and Technology, 1989. http://dx.doi.org/10.6028/nist.ir.89-3917.

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Ikagawa, T. Performance of Large Area Avalanche Photodiode for a Low Energy X-Rays and gamma-rays Scintillation Detection. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/826645.

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