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Relevant bibliographies by topics / Avalanche photodiodes. Photodiodes / Journal articles

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Journal articles on the topic 'Avalanche photodiodes. Photodiodes'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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1

Rockwell, Ann-Katheryn, Yuan Yuan, Andrew H. Jones, Stephen D. March, Seth R. Bank, and Joe C. Campbell. "Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes." IEEE Photonics Technology Letters 30, no. 11 (2018): 1048–51. http://dx.doi.org/10.1109/lpt.2018.2826999.

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2

Carrano, J. C., D. J. H. Lambert, C. J. Eiting, et al. "GaN avalanche photodiodes." Applied Physics Letters 76, no. 7 (2000): 924–26. http://dx.doi.org/10.1063/1.125631.

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3

Tsuji, Masayoshi, Isao Watanabe, Kikuo Makita, and Kenko Taguchi. "InAlGaAs Staircase Avalanche Photodiodes." Japanese Journal of Applied Physics 33, Part 2, No. 1A (1994): L32—L34. http://dx.doi.org/10.1143/jjap.33.l32.

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4

Choa, F. S., and P. L. Liu. "Cascaded homojunction avalanche photodiodes." Fiber and Integrated Optics 7, no. 1 (1988): 1–15. http://dx.doi.org/10.1080/01468038808219347.

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5

Hasnain, G., W. G. Bi, S. Song, et al. "Buried-mesa avalanche photodiodes." IEEE Journal of Quantum Electronics 34, no. 12 (1998): 2321–26. http://dx.doi.org/10.1109/3.736100.

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6

Zhou, Qiugui, Dion C. McIntosh, Zhiwen Lu, et al. "GaN/SiC avalanche photodiodes." Applied Physics Letters 99, no. 13 (2011): 131110. http://dx.doi.org/10.1063/1.3636412.

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7

Kinch, M. A., J. D. Beck, C. F. Wan, F. Ma, and J. Campbell. "HgCdTe electron avalanche photodiodes." Journal of Electronic Materials 33, no. 6 (2004): 630–39. http://dx.doi.org/10.1007/s11664-004-0058-1.

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8

Fedorenko, A. V. "Spectral photosensitivity of diffused Ge-p–i–n photodiods." Технология и конструирование в электронной аппаратуре, no. 3-4 (2020): 17–23. http://dx.doi.org/10.15222/tkea2020.3-4.17.

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Laser rangefinders are widely used to measure distances for various civil and military purposes, as well as in rocket and space technology. The optical channel of such rangefinders uses high-speed p–i–n, or avalanche, photodiodes based on Si, Ge or InGaAs depending on the operating wavelength of the rangefinder in question. The paper describes a manufacturing process for high-speed Ge-p–i–n photodiodes for laser rangefinders using the diffusion method. The passivation layer is made of ZnSe, which is a new solution for this type of photodiodes. The existing theoretical models are used to study

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9

Gao Yanlei, 高艳磊, 芦小刚 Lu Xiaogang, 白金海 Bai Jinhai, et al. "Avalanche Luminescence Crosstalk between Avalanche Photodiodes." Acta Optica Sinica 35, no. 7 (2015): 0727004. http://dx.doi.org/10.3788/aos201535.0727004.

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10

Ong, D. S., G. J. Rees, and J. P. R. David. "Avalanche speed in thin avalanche photodiodes." Journal of Applied Physics 93, no. 7 (2003): 4232–39. http://dx.doi.org/10.1063/1.1557785.

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11

Nada, Masahiro, Fumito Nakajima, Toshihide Yoshimatsu, et al. "Inverted p-down Design for High-Speed Photodetectors." Photonics 8, no. 2 (2021): 39. http://dx.doi.org/10.3390/photonics8020039.

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We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

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12

Yan, Feng, Xiao Bin Xin, Petre Alexandrov, Carl M. Stahle, Bing Guan, and Jian Hui Zhao. "Development of Ultra High Sensitivity UV Silicon Carbide Detectors." Materials Science Forum 527-529 (October 2006): 1461–64. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1461.

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A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiC photo-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are many orders of magnitude higher than the D* of other solid state detectors, and for the first time, comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursue the ultimate sensitivity.

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13

Ahmadov, F. "Alpha particle detector based on micro pixel avalanche photodiodes." Functional materials 20, no. 3 (2013): 390–82. http://dx.doi.org/10.15407/fm20.03.390.

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14

Cheang, Pei Ling, Eng Kiong Wong, and Lay Lian Teo. "Avalanche characteristics in thin GaN avalanche photodiodes." Japanese Journal of Applied Physics 58, no. 8 (2019): 082001. http://dx.doi.org/10.7567/1347-4065/ab2e17.

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15

Low, L. C., A. H. You, L. L. Y. Andy, and S. L. Tan. "Avalanche characteristics of single heterojunction avalanche photodiodes." European Physical Journal Applied Physics 45, no. 3 (2009): 30301. http://dx.doi.org/10.1051/epjap/2009014.

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16

Singh, Anand, Vanya Srivastav, and Ravinder Pal. "HgCdTe avalanche photodiodes: A review." Optics & Laser Technology 43, no. 7 (2011): 1358–70. http://dx.doi.org/10.1016/j.optlastec.2011.03.009.

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17

Moszyński, M., M. Szawlowski, M. Kapusta, and M. Balcerzyk. "Avalanche photodiodes in scintillation detection." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 497, no. 1 (2003): 226–33. http://dx.doi.org/10.1016/s0168-9002(02)01916-2.

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18

Pilicer, Ercan, Fatma Kocak, Ilhan Tapan, and Muhitdin Ahmetoglu (Afrailov). "Avalanche photodiodes for electromagnetic calorimeters." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 572, no. 1 (2007): 120–21. http://dx.doi.org/10.1016/j.nima.2006.10.167.

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19

Anfimov, N., I. Chirikov-Zorin, Z. Krumshteyn, R. Leitner, and A. Olchevski. "Test of micropixel avalanche photodiodes." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 572, no. 1 (2007): 413–15. http://dx.doi.org/10.1016/j.nima.2006.10.218.

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20

Mazzillo, M., G. Condorelli, A. Campisi, et al. "Single photon avalanche photodiodes arrays." Sensors and Actuators A: Physical 138, no. 2 (2007): 306–12. http://dx.doi.org/10.1016/j.sna.2007.05.016.

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21

Zheng, Jiyuan, Yuan Yuan, Yaohua Tan, et al. "Digital Alloy InAlAs Avalanche Photodiodes." Journal of Lightwave Technology 36, no. 17 (2018): 3580–85. http://dx.doi.org/10.1109/jlt.2018.2844114.

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22

Roy, B. C., and N. B. Chakrabarti. "Pulse response of avalanche photodiodes." Journal of Lightwave Technology 10, no. 2 (1992): 169–81. http://dx.doi.org/10.1109/50.120572.

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23

Campbell, J. C., S. Demiguel, F. Ma, et al. "Recent Advances in Avalanche Photodiodes." IEEE Journal of Selected Topics in Quantum Electronics 10, no. 4 (2004): 777–87. http://dx.doi.org/10.1109/jstqe.2004.833971.

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24

David, J. P. R., and C. H. Tan. "Material Considerations for Avalanche Photodiodes." IEEE Journal of Selected Topics in Quantum Electronics 14, no. 4 (2008): 998–1009. http://dx.doi.org/10.1109/jstqe.2008.918313.

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25

Pansart, J. P. "Avalanche photodiodes for particle detection." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 387, no. 1-2 (1997): 186–93. http://dx.doi.org/10.1016/s0168-9002(96)00987-4.

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26

Sun, Wenlu, Zhiwen Lu, Xiaoguang Zheng, et al. "High-Gain InAs Avalanche Photodiodes." IEEE Journal of Quantum Electronics 49, no. 2 (2013): 154–61. http://dx.doi.org/10.1109/jqe.2012.2233462.

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27

Campbell, Joe C. "Recent Advances in Avalanche Photodiodes." Journal of Lightwave Technology 34, no. 2 (2016): 278–85. http://dx.doi.org/10.1109/jlt.2015.2453092.

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28

Woods, R. C. "Noise effects in avalanche photodiodes." IEEE Transactions on Education 43, no. 3 (2000): 321–23. http://dx.doi.org/10.1109/13.865208.

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29

Kuchibhotla, R., J. C. Campbell, C. Tsai, and W. T. Tsang. "Delta-doped SAGM avalanche photodiodes." IEEE Transactions on Electron Devices 38, no. 12 (1991): 2705–6. http://dx.doi.org/10.1109/16.158729.

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30

Becla, P. "Long wavelength HgMnTe avalanche photodiodes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 4 (1992): 1599. http://dx.doi.org/10.1116/1.586255.

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31

Mazzillo, M., G. Condorelli, D. Sanfilippo, et al. "Silicon Geiger mode avalanche photodiodes." Optoelectronics Letters 3, no. 3 (2007): 177–80. http://dx.doi.org/10.1007/s11801-007-6203-3.

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32

Jafarova, Elmira A., Ziraddin Y. Sadygov, Ali Huseyn A. Dovlatov, Lala A. Aliyeva, Eldar S. Tapdygov, and Kamala A. Askerova. "Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels." European Journal of Engineering Research and Science 3, no. 4 (2018): 61. http://dx.doi.org/10.24018/ejers.2018.3.4.701.

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There have been investigated reactive properties of silicon avalanche photodiodes (MAPD- Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f= (50-500) kHz.By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance).The magnitude of active component

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33

Rowland, L. B., Jeffery L. Wyatt, Jody Fronheiser, et al. "6H and 4H-SiC Avalanche Photodiodes." Materials Science Forum 615-617 (March 2009): 869–72. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.869.

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We report on the fabrication and testing of SiC p-i-n avalanche photodiodes. APDs of 0.25 mm2 area on a-plane (1120) 6H-SiC as well as off-axis Si face 6H and 4H-SiC were successfully fabricated. A beveled mesa was used as edge termination. Recessed windows were formed using reactive ion etching to enhance low-wavelength UV performance. We performed current-voltage tests with and without UV illumination to determine dark current, photocurrent, and gain on selected devices. Dark current was less than 1 pA at 0.5Vbr on multiple devices. Quantum efficiency of 40% or greater was observed for all o

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34

Soloviev, Stanislav I., Alexey V. Vert, Jody Fronheiser, and Peter M. Sandvik. "Solar-Blind 4H-SiC Avalanche Photodiodes." Materials Science Forum 615-617 (March 2009): 873–76. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.873.

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In this work, solar-blind UV 4H-SiC avalanche photodetectors were fabricated and tested in linear and Geiger modes. APDs with both PIN and separate absorption and multiplication (SAM) structures were investigated. PIN structures demonstrated higher quantum efficiencies while the SAM structure exhibit lower leakage currents. Deposition of a thin film optical filter on top of the devices was used to provide a high photon rejection ratio of (Stas add value here). However, an external filter showed a better photon rejection ratio compared to the deposited one by about one order of magnitude.

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35

BRITVITCH, I., K. DEITERS, Q. INGRAM, et al. "Avalanche photodiodes now and possible developments." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 535, no. 1-2 (2004): 523–27. http://dx.doi.org/10.1016/s0168-9002(04)01720-6.

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36

Khodin, Alexandre, Dmitry Shvarkov, and Valery Zalesski. "Silicon avalanche photodiodes for particle detector:." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 465, no. 1 (2001): 253–56. http://dx.doi.org/10.1016/s0168-9002(01)00403-x.

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37

Huang, Tao. "Photon emission characteristics of avalanche photodiodes." Optical Engineering 44, no. 7 (2005): 074001. http://dx.doi.org/10.1117/1.1950087.

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38

McIntosh, Dion, Qiugui Zhou, Yaojia Chen, and Joe C. Campbell. "High quantum efficiency GaP avalanche photodiodes." Optics Express 19, no. 20 (2011): 19607. http://dx.doi.org/10.1364/oe.19.019607.

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39

Sciacca, E., S. Lombardo, M. Mazzillo, et al. "Arrays of Geiger mode avalanche photodiodes." IEEE Photonics Technology Letters 18, no. 15 (2006): 1633–35. http://dx.doi.org/10.1109/lpt.2006.879576.

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40

White, Benjamin S., Ian C. Sandall, Xinxin Zhou, et al. "High-Gain InAs Planar Avalanche Photodiodes." Journal of Lightwave Technology 34, no. 11 (2016): 2639–44. http://dx.doi.org/10.1109/jlt.2016.2531278.

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41

Sun, X., and F. M. Davidson. "Photon counting with silicon avalanche photodiodes." Journal of Lightwave Technology 10, no. 8 (1992): 1023–32. http://dx.doi.org/10.1109/50.156841.

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42

Campbell, Joe C., Xiangyi Guo, Ariane Beck, Han-Din Liu, and Dion McIntosh. "4H- and 6H- SiC Avalanche Photodiodes." ECS Transactions 3, no. 5 (2019): 359–65. http://dx.doi.org/10.1149/1.2357225.

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43

Liu, Y., S. R. Forrest, R. Loo, G. Tangonan, and H. Yen. "Anomalous multiplication in Hg0.56Cd0.44Te avalanche photodiodes." Applied Physics Letters 61, no. 24 (1992): 2878–80. http://dx.doi.org/10.1063/1.108063.

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44

Conceição, A. S., L. F. Requicha Ferreira, L. M. P. Fernandes, et al. "GEM scintillation readout with avalanche photodiodes." Journal of Instrumentation 2, no. 09 (2007): P09010. http://dx.doi.org/10.1088/1748-0221/2/09/p09010.

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45

Baccaro, S., J. E. Bateman, F. Cavallari, et al. "Radiation damage effect on avalanche photodiodes." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 426, no. 1 (1999): 206–11. http://dx.doi.org/10.1016/s0168-9002(98)01493-4.

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46

Wilson, Robert J. "A focussing DIRC with avalanche photodiodes." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 433, no. 1-2 (1999): 487–91. http://dx.doi.org/10.1016/s0168-9002(99)00369-1.

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47

Tapan, I., A. R. Duell, R. S. Gilmore, T. J. Llewellyn, S. Nash, and R. J. Tapper. "Avalanche photodiodes as proportional particle detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 388, no. 1-2 (1997): 79–90. http://dx.doi.org/10.1016/s0168-9002(97)00316-1.

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48

Mo Qiu-Yan and Zhao Yan-Li. "Frequency responses of communication avalanche photodiodes." Acta Physica Sinica 60, no. 7 (2011): 072902. http://dx.doi.org/10.7498/aps.60.072902.

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49

Wu, Zhiwei, Jingshu Guo, Yuan Li, and Yanli Zhao. "Low-Noise 3-D Avalanche Photodiodes." IEEE Photonics Journal 8, no. 4 (2016): 1–10. http://dx.doi.org/10.1109/jphot.2016.2578932.

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50

Shao, Z. G., X. F. Yang, H. F. You, et al. "Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes." IEEE Electron Device Letters 38, no. 4 (2017): 485–88. http://dx.doi.org/10.1109/led.2017.2664079.

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