Relevant bibliographies by topics / Bandgap reference

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Bandgap reference'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Bandgap reference"

1

Shi, Jun. "Bandgap Reference Layout Analysis and Design." International Journal of Information and Electronics Engineering 9, no. 1 (March 2019): 1–6. http://dx.doi.org/10.18178/ijiee.2019.9.1.695.

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Banu, Viorel, Phillippe Godignon, Xavier Jordá, Mihaela Alexandru, and José Millan. "Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications." Materials Science Forum 679-680 (March 2011): 754–57. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.754.

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This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.
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Barteselli, Edoardo, Luca Sant, Richard Gaggl, and Andrea Baschirotto. "Design Techniques for Low-Power and Low-Voltage Bandgaps." Electricity 2, no. 3 (July 26, 2021): 271–84. http://dx.doi.org/10.3390/electricity2030016.

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Reverse bandgaps generate PVT-independent reference voltages by means of the sums of pairs of currents over individual matched resistors: one (CTAT) current is proportional to VEB; the other one (PTAT) is proportional to VT (Thermal voltage). Design guidelines and techniques for a CMOS low-power reverse bandgap reference are presented and discussed in this paper. The paper explains firstly how to design the components of the bandgap branches to minimize circuit current. Secondly, error amplifier topologies are studied in order to reveal the best one, depending on the operation conditions. Finally, a low-voltage bandgap in 65 nm CMOS with 5 ppm/°C, with a DC PSR of −91 dB, with power consumption of 5.2 μW and with an area of 0.0352 mm2 developed with these techniques is presented.
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Kim, Jae-Bung, and Seong-Ik Cho. "Modified Low-Votlage CMOS Bandgap Voltage Reference with CTAT Compensation." Transactions of The Korean Institute of Electrical Engineers 61, no. 5 (May 1, 2012): 753–56. http://dx.doi.org/10.5370/kiee.2012.61.5.753.

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Hande, Vinayak, and Maryam Shojaei Baghini. "Survey of Bandgap and Non-bandgap based Voltage Reference Techniques." Scientia Iranica 23, no. 6 (October 1, 2016): 2845–61. http://dx.doi.org/10.24200/sci.2016.3994.

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Tian, XingGuo, XiaoNing Xin, and DongYang Han. "A high precision bandgap voltage reference." MATEC Web of Conferences 232 (2018): 04072. http://dx.doi.org/10.1051/matecconf/201823204072.

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In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient. In this paper, the basic implementation principle of the bandgap reference is analyzed.On the basis of the traditional bandgap reference circuit structure,this design adds a trimming network and a temperature compensation network. A new Gaussian bell curve compensation technique is adopted to compensate the low temperature section, and the normal temperature section and the high temperature section respectively. Compared with the existing compensation technology, the versatility and the compensation effect is better. The designed circuit is designed and manufactured based on the Huahong HHNECGE0.35um process. The results show that the output voltage is 2.5V at 2.7V supply voltage and temperature range of -40-125°C.at typical process angle ,the temperature coefficient is 0.54618 PPm/°C,and is within 1PPm/°C at other process angles.
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Ye, Rong Ke, and Rong Bin Hu. "A Bandgap Reference with High Order Temperature Compensation." Advanced Materials Research 1049-1050 (October 2014): 649–52. http://dx.doi.org/10.4028/www.scientific.net/amr.1049-1050.649.

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A kind of CMOS bandgap reference circuit with high order temperature compensation is introduced [1]. Compared to the traditional circuit, the bandgap reference proposed here has several advantages such as better temperature stability, smaller chip area, lower power consumption, self-power-on, and so on. Our design can be used in analog-to-digital or digital-to-analog converters, where high performance bandgap reference is required.
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Mitrea, O., C. Popa, A. M. Manolescu, and M. Glesner. "A curvature-corrected CMOS bandgap reference." Advances in Radio Science 1 (May 5, 2005): 181–84. http://dx.doi.org/10.5194/ars-1-181-2003.

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Abstract. This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the VBE(T ) expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35µm 3Metal/2Poly CMOS technology and the chip area is approximately 70µm × 110µm. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW.
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Dai *, Yihong, Donald T. Comer, and David J. Comer. "A GaAs HBT bandgap voltage reference." International Journal of Electronics 92, no. 2 (February 2005): 87–97. http://dx.doi.org/10.1080/00207210412331332853.

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Cherry, E. M. "2-Terminal floating bandgap voltage reference." IEE Proceedings - Circuits, Devices and Systems 152, no. 6 (2005): 729. http://dx.doi.org/10.1049/ip-cds:20045130.

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Dissertations / Theses on the topic "Bandgap reference"

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Kevin, Tom. "Sub-1V Curvature Compensated Bandgap Reference." Thesis, Linköping University, Department of Electrical Engineering, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-2585.

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This thesis investigates the possibility of realizing bandgap reference crcuits for processes having sub-1V supply voltage. With the scaling of gate oxide thickness supply voltage is getting reduced. But the threshold voltage of transistors is not getting scaled at the same rate as that of the supply voltage. This makes it difficult to incorporate conventional designs of bandgap reference circuits to processeshaving near to 1V supply voltage. In the first part of the thesis a comprehensive study on existing low voltage bandgap reference circuits is done. Using these ideas a low-power, low-voltage bandgap reference circuit is designed in the second part of the thesis work.

The proposed bandgap reference circuit is capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18µm standard CMOS technology and operates with 0.9V supply voltage, consuming 5µA current. The circuit achieves 7 ppm/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60C.

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Digvadekar, Ashish A. "A sub 1 V bandgap reference circuit /." Online version of thesis, 2005. https://ritdml.rit.edu/dspace/handle/1850/2595.

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Sanikommu, Ramanarayana Reddy. "Design and Implementation of Bandgap Reference Circuits." Thesis, Linköping University, Department of Electrical Engineering, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-398.

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An important part in the design of analog integrated circuits is to create reference voltages and currents with well defined values. To accomplish this on-chip, so called bandgap reference circuits are commonly used. A typical application for reference voltages is in analog-to-digital conversion, where the input voltage is compared to several reference levels in order to determine the corresponding digital value. The emphasis in this thesis work lies on theoretical understanding of the performance limitations as well as the design of a bandgap reference circuit, BGR.

In this project, a comprehensive study of bandgap circuits is done in the first stage. Then investigations on parameter variations like Vdd, number of bipolars, W/L of PMOS, DC gain of Opamp, RL and CL are done for a PTAT current generator circuit. This PTAT current generator circuit is a part of the implemented BGR circuit based on [10], which is capable of producing an output reference voltage of 0.75 V when the supply voltage is 1 V. All of these circuits are implemented in a 0.35u CMOS technology.

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Knop, Jaroslav. "Nízkošumový referenční zdroj typu bandgap." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-217239.

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This work deals with principles of design low noise bandgap reference using multiple in the process EPI92. The voltage reference is described and theoretic analysis noise performances is made. Results are compared with measured data realized breadboard BG reference and fabricated low drop-out regulators, which using different accurate bandgap references cells.
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Chan, Yiu Fai. "A new curvature-compensation technique for bandgap voltage reference." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0003/MQ28924.pdf.

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Herbst, Steven (Steven G. ). "A low-noise bandgap voltage reference employing dynamic element matching." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/77071.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 109).
Bandgap voltages references are widely used in IC design, but are sensitive to low-frequency noise and component mismatch. This thesis describes the design and testing of a new IC voltage reference that targets these issues through three dynamic element matching (DEM) subsystems. The first is a chopper OTA, and the second two are component rotation schemes: one to exchange the positions of two critical resistors, and the second to cycle through all BJTs, periodically selecting each to participate as the "1" transistor of the N:1 bandgap ratio. Practical designs that address the various switching issues typically associated with DEM, such as glitch and clock drift, are described. Analytic expressions for the effects of noise and mismatch throughout the bandgap reference are derived, along with expressions for calculating the improvement that can be achieved by DEM. A test chip was implemented in a 0.25[mu]m BiCMOS process; with its three DEM subsystems enabled it is shown to achieve a 20x 1/f noise improvement and a 34x mismatch error improvement.
by Steven Herbst.
M.Eng.
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Gupta, Vishal. "An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-07052007-073154/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.
Ayazi, Farrokh, Committee Member ; Rincon-Mora, Gabriel, Committee Chair ; Bhatti, Pamela, Committee Member ; Leach, W. Marshall, Committee Member ; Morley, Thomas, Committee Member.
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Sundar, Siddharth. "A low power high power supply rejection ratio bandgap reference for portable applications." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/46517.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
Includes bibliographical references (p. 86-87).
A multistage bandgap circuit with very high power supply rejection ratio was designed and simulated. The key features of this bandgap include multiple power modes, low power consumption and a novel resistor trimming strategy. This design was completed in deep submicron CMOS technology, and is especially suited for portable applications. The bandgap designed achieves over 90 dB of power supply rejection and less than 17 microvolts of noise without any external filtering. With an external filtering capacitor, this performance is significantly enhanced. In addition, the design includes an efficient voltage-to-current converter and a fast-charge circuit for charging the external capacitor.
by Siddharth Sundar.
M.Eng.
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Kacafírek, Jiří. "Návrh přesné napěťové reference v ACMOS procesu." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218682.

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In this thesis the principle of voltage reference especially bangap reference is described. Below are described two circuits of this type designed in ACMOS process. There is handmade evaluation of error analysis to identify main error contributors and also monte-carlo simulation. Also statistical analysis is made on the circuit. Results of all methods are compared. Error of reference voltage is compared for both circuits. Circuit with bigger error is optimized to achieve a better precision. Obtained results showed a good agreement of all methods, which evidences importance of hand error evaluation.
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Kotrč, Václav. "Napěťové reference v bipolárním a CMOS procesu." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221111.

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This diploma thesis deals with precise design of Brokaw BandGap voltage reference comparing with MOS references. There is STEP BY STEP separation and analysis of proposed devices, using Monte Carlo analysis. There are also presented the methods for achieving a lower deviation of the output voltage for yielding device, which needs no trimming.
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Books on the topic "Bandgap reference"

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Rincón-Mora, Gabriel A. Voltage references: From diodes to precision high-order bandgap circuits. Piscataway, NJ: IEEE Press, 2002.

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Staveren, Arie van. Structured electronic design: High-performance harmonic oscillators and bandgap references. Boston: Kluwer Academic Publishers, 2001.

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H, Carter Calvin, and Materials Research Society. Meeting Symposium D., eds. Diamond, SiC and nitride wide bandgap semiconductors: Symposium held April 4-8, 1994, San Francisco, California, U.S. Pittsburgh, PA: Materials Research Society, 1994.

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Gazeley, William G. A study of the temperature dependence of the DC current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors with application to bandgap voltage reference sources. 1989.

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Carter, Calvin H., and Gennady Gildenblat. Diamond, Sic and Nitride Wide Bandgap Semiconductors: Symposium Held April 4-8, 1994, San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings). Materials Research Society, 1994.

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Lingen, Koert Van Der, and Koert Van Lingen. Bipolar Transistors for Use in Monolithic Bandgap References & Temperature Transducers. Coronet Books, 1996.

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Rincon-Mora, Gabriel Alfonso. Voltage References: From Diodes to Precision High-Order Bandgap Circuits. Wiley-IEEE Press, 2001.

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Staveren, Arie Van. Structured Electronic Design: High-Performance Harmonic Oscillators And Bandgap References. Springer, 2010.

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Nelson, Jeff B. Bandage: The medical reference guide for care and prevention of sports injuries. ProCare Sportsmedicine, Inc, 2000.

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Roermund, Arthur H. M. van, Chris J. M. Verhoeven, and Arie van Staveren. Structured Electronic Design - High-Performance Harmonic Oscillators and Bandgap References (The Kluwer International Series in Engineering and Computer ... Series in Engineering and Computer Science). Springer, 2000.

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Book chapters on the topic "Bandgap reference"

1

van Staveren, Arie, Michiel H. L. Kouwenhoven, Wouter A. Serdijn, and Chris J. M. Verhoeven. "Bandgap Reference Design." In Trade-Offs in Analog Circuit Design, 139–67. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/0-306-47673-8_5.

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Akshaya, R., and Siva Yellampalli. "Analysis and Design of Bandgap Reference (BGR)." In Lecture Notes in Electrical Engineering, 413–50. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8234-4_35.

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Liping, Chang, An Kang, Liu Yao, Liang Bin, and Li Jinwen. "A High-PSRR CMOS Bandgap Reference Circuit." In Communications in Computer and Information Science, 94–102. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-49283-3_10.

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Saidulu, Bellamkonda, Arun Manoharan, Bellamkonda Bhavani, and Jameer Basha Sk. "An Improved CMOS Voltage Bandgap Reference Circuit." In Advances in Intelligent Systems and Computing, 621–29. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7868-2_59.

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Kotabagi, Sujata S., Chetan Hanakanahalli, and Abirmoya Santra. "Low Power Bandgap Reference Using Chopper Amplifier." In Lecture Notes in Electrical Engineering, 103–15. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-0275-7_9.

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Ding, Wei, Yong Xu, Rui Min, Zheng Sun, and Yuan-Liang Wu. "A Novel Thermal Protection Circuit Based on Bandgap Voltage Reference." In Electronics, Communications and Networks V, 43–50. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-0740-8_6.

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Staveren, A., J. Velzen, C. J. M. Verhoeven, and A. H. M. Roermund. "An Integratable Second-Order Compensated Bandgap Reference for 1V Supply." In Low-Voltage Low-Power Analog Integrated Circuits, 69–81. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2283-6_6.

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Madeira, Ricardo, and Nuno Paulino. "Design Methodology for an All CMOS Bandgap Voltage Reference Circuit." In IFIP Advances in Information and Communication Technology, 439–46. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56077-9_43.

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Jun-an, Zhang, Li Guangjun, Zhang Rui-tao, Yang Yu-jun, Li Xi, Yan Bo, Fu Dong-bing, and Luo Pu. "Challenge of High Performance Bandgap Reference Design in Nanoscale CMOS Technology." In Outlook and Challenges of Nano Devices, Sensors, and MEMS, 45–68. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-50824-5_2.

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Yu, Jianhai, Guojin Peng, Kuikui Wang, and Meini Lv. "Design of a All-CMOS Second-Order Temperature Compensated Bandgap Reference." In Wireless and Satellite Systems, 100–108. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-19156-6_10.

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Conference papers on the topic "Bandgap reference"

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Becker-Gomez, Adriana, Antonio F. Mondragon-Torres, Venkatesh Acharya, Bhaskar Banerjee, and T. R. Viswanathan. "A digital bandgap reference." In 2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2013. http://dx.doi.org/10.1109/mwscas.2013.6674623.

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Mugalakhod, Vidyashri M., and Rajashekhar B. Shettar. "Design of Resistorless Bandgap Reference." In 2018 3rd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT). IEEE, 2018. http://dx.doi.org/10.1109/rteict42901.2018.9012114.

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Hazucha, Peter, Fabrice Paillet, Sung Tae Moon, David J. Rennie, Gerhard Schrom, Donald S. Gardner, Kenneth Ikeda, Gell Gellman, and Tanay Karnik. "Low Voltage Buffered Bandgap Reference." In 2007 IEEE International Symposium on Quality of Electronic Design. IEEE, 2007. http://dx.doi.org/10.1109/isqed.2007.99.

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Lee, Jong Mi, Youngwoo Ji, Seungnam Choi, Young-Chul Cho, Seong-Jin Jang, Joo Sun Choi, Byungsub Kim, Hong-June Park, and Jae-Yoon Sim. "5.7 A 29nW bandgap reference circuit." In 2015 IEEE International Solid- State Circuits Conference - (ISSCC). IEEE, 2015. http://dx.doi.org/10.1109/isscc.2015.7062945.

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Urban, Tomas, Ondrej Subrt, and Pravoslav Martinek. "Versatile sub-bandgap reference IP core." In 2010 IEEE 13th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS). IEEE, 2010. http://dx.doi.org/10.1109/ddecs.2010.5491747.

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Far, Ali. "A 400nW CMOS bandgap voltage reference." In 2013 International Conference on Electrical, Electronics and System Engineering (ICEESE). IEEE, 2013. http://dx.doi.org/10.1109/iceese.2013.6895035.

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Dualibe, Carlos. "Novel MOSFET-only bandgap voltage reference." In 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010. IEEE, 2010. http://dx.doi.org/10.1109/iscas.2010.5537469.

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Kaiyang Pan, Jianhui Wu, and Pei Wang. "A high precision CMOS bandgap reference." In 2007 7th International Conference on ASIC. IEEE, 2007. http://dx.doi.org/10.1109/icasic.2007.4415725.

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Klimach, H., M. F. C. Monteiro, A. L. T. Costa, and S. Bampi. "A resistorless switched bandgap reference topology." In 2013 IEEE 4th Latin American Symposium on Circuits and Systems (LASCAS). IEEE, 2013. http://dx.doi.org/10.1109/lascas.2013.6519026.

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Zhao, Chenyuan, and Junkai Huang. "A new high performance bandgap reference." In 2011 International Conference on Electronics, Communications and Control (ICECC). IEEE, 2011. http://dx.doi.org/10.1109/icecc.2011.6067602.

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